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Artículos de revistas sobre el tema "Nitride Thin Films"

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Publicado: 6 de septiembre de 2023

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1

Kikkawa, Shinichi, K. Sakon, Y. Kawaai y T. Takeda. "Magnetoresistance of Post-Annealed Iron Nitride Related Thin Films". Advances in Science and Technology 52 (octubre de 2006): 70–74. http://dx.doi.org/10.4028/www.scientific.net/ast.52.70.

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Iron nitrides thermally decompose to α-Fe releasing their nitrogen above 300°C. MR effect was found out in the thin films obtained by post-annealing of the following two kinds of sputter deposited iron nitride related films. (1) α-Fe particles dispersed in AlN granular film was obtained by an annealing of Al0.31Fe0.69N sputter deposited film in hydrogen. The MR=0.82% was found out in this nitride system. (2) Fe3O4 thin films were prepared by thermal decomposition of sputter deposited iron nitride films in low oxygen partial pressure. The iron nitrides were defect rock salt type γ΄˝-FeNx (0.5≤x≤0.7) and zinc blende type γ˝-FeNy (0.8≤y≤0.9) at the sputter nitrogen gas pressure of 1Pa and 6Pa. MR ratios of the oxide films were about 2%.

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2

Gerlach, J. W., J. Mennig y B. Rauschenbach. "Epitaxial gadolinium nitride thin films". Applied Physics Letters 90, n.º 6 (5 de febrero de 2007): 061919. http://dx.doi.org/10.1063/1.2472538.

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3

Preschilla A., Nisha, S. Major, Nigvendra Kumar, I. Samajdar y R. S. Srinivasa. "Nanocrystalline gallium nitride thin films". Applied Physics Letters 77, n.º 12 (2000): 1861. http://dx.doi.org/10.1063/1.1311595.

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4

Konyashin, Igor y German Fox-Rabinovich. "Nanograined Titanium Nitride Thin Films". Advanced Materials 10, n.º 12 (agosto de 1998): 952–55. http://dx.doi.org/10.1002/(sici)1521-4095(199808)10:12<952::aid-adma952>3.0.co;2-o.

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5

Jouan, Pierre Yves, Arnaud Tricoteaux y Nicolas Horny. "Elaboration of nitride thin films by reactive sputtering". Rem: Revista Escola de Minas 59, n.º 2 (junio de 2006): 225–32. http://dx.doi.org/10.1590/s0370-44672006000200013.

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The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

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6

Kamat, Hrishikesh, Xingwu Wang, James Parry, Yueling Qin y Hao Zeng. "Synthesis and Characterization of Copper-Iron Nitride Thin Films". MRS Advances 1, n.º 3 (14 de diciembre de 2015): 203–8. http://dx.doi.org/10.1557/adv.2015.13.

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ABSTRACTIron nitride thin films have potential applications in the biomedicine and energy. The magnetic properties of these films can be tuned by incorporating copper nitride. In this study, iron copper nitride thin films have been fabricated by magnetron sputtering technique either by co-sputtering iron nitride and copper nitride or by layer stacking of the materials. The structure, morphology and magnetic properties of the films have been studied by scanning electron microscopy, x-ray diffraction, x-ray reflectivity and vibrating sample magnetometry.

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7

RUSOP, M., T. SOGA, T. JIMBO, M. UMENO y M. SHARON. "SEMICONDUCTING AMORPHOUS CAMPHORIC CARBON NITRIDE THIN FILMS". Surface Review and Letters 12, n.º 04 (agosto de 2005): 587–95. http://dx.doi.org/10.1142/s0218625x05007475.

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Amorphous carbon nitride ( a-CN x) films have been deposited by pulsed laser deposition at 0.8 Torr nitrogen gas ambient with varying substrate temperature from 20 to 500°C. The effects of the substrate temperature and ambient nitrogen gas pressure on the surface morphology, composition, nitrogen content, structure, and electrical properties of the a-CN x thin films have been investigated. The deposited a-CN x films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, Fourier transform infrared (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-Visible transmittance, and four-probe resistance measurement. It is found that the amorphous structure of a-CN x films can be changed by the substrate temperature (ST) and the a-CN x films with high nitrogen content have relatively high electrical resistivity. Also, graphitization is found to cause the reduction of nitrogen content and changes in the bonding structure of nitrogen atoms in the films.

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8

Linthicum, Kevin, Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep Rajagopal, Tim Smith, Dale Batchelor y Robert Davis. "Pendeoepitaxy of gallium nitride thin films". Applied Physics Letters 75, n.º 2 (12 de julio de 1999): 196–98. http://dx.doi.org/10.1063/1.124317.

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9

Bykhovski, A. D., V. V. Kaminski, M. S. Shur, Q. C. Chen y M. A. Khan. "Pyroelectricity in gallium nitride thin films". Applied Physics Letters 69, n.º 21 (18 de noviembre de 1996): 3254–56. http://dx.doi.org/10.1063/1.118027.

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10

Hultman, L. "Thermal stability of nitride thin films". Vacuum 57, n.º 1 (abril de 2000): 1–30. http://dx.doi.org/10.1016/s0042-207x(00)00143-3.

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11

Watanabe, Yoshihisa, Yoshikazu Nakamura, Shigekazu Hirayama y Yuusaku Naota. "Characterization of aluminium nitride thin films". Ceramics International 22, n.º 6 (enero de 1996): 509–13. http://dx.doi.org/10.1016/0272-8842(95)00127-1.

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12

Wu, H. Z., T. C. Chou, A. Mishra, D. R. Anderson, J. K. Lampert y S. C. Gujrathi. "Characterization of titanium nitride thin films". Thin Solid Films 191, n.º 1 (octubre de 1990): 55–67. http://dx.doi.org/10.1016/0040-6090(90)90274-h.

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13

Karim, M. Z., D. C. Cameron y M. S. J. Hashmi. "Vapour deposited boron nitride thin films". Materials & Design 13, n.º 4 (enero de 1992): 207–14. http://dx.doi.org/10.1016/0261-3069(92)90026-e.

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14

Hellgren, Niklas, Nian Lin, Esteban Broitman, Virginie Serin, Stefano E. Grillo, Ray Twesten, Ivan Petrov, Christian Colliex, Lars Hultman y Jan-Eric Sundgren. "Thermal stability of carbon nitride thin films". Journal of Materials Research 16, n.º 11 (noviembre de 2001): 3188–201. http://dx.doi.org/10.1557/jmr.2001.0440.

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The thermal stability of carbon nitride films, deposited by reactive direct current magnetron sputtering in N2 discharge, was studied for postdeposition annealing temperatures TA up to 1000 °C. Films were grown at temperatures of 100 °C (amorphous structure) and 350 and 550 °C (fullerenelike structure) and were analyzed with respect to thickness, composition, microstructure, bonding structure, and mechanical properties as a function of TA and annealing time. All properties investigated were found to be stable for annealing up to 300 °C for long times (>48 h). For higher TA, nitrogen is lost from the films and graphitization takes place. At TA = 500 °C the graphitization process takes up to 48 h while at TA = 900 °C it takes less than 2 min. A comparison on the evolution of x-ray photoelectron spectroscopy, electron energy loss spectroscopy and Raman spectra during annealing shows that for TA > 800 °C, preferentially pyridinelike N and –C≡N is lost from the films, mainly in the form of molecular N2 and C2N2, while N substituted in graphite is preserved the longest in the structure. Films deposited at the higher temperature exhibit better thermal stability, but annealing at temperatures a few hundred degrees Celsius above the deposition temperature for long times is always detrimental for the mechanical properties of the films.

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15

Jafarzadeh, Morteza, Kaykhosrow Khojier y Hadi Savaloni. "Influence of Nitrogen Gas Flow on Mechanical and Tribological Properties of Sputtered Chromium Nitride Thin Films". Advanced Materials Research 829 (noviembre de 2013): 497–501. http://dx.doi.org/10.4028/www.scientific.net/amr.829.497.

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Nitride based hard coatings are widely used for mechanical applications. Among these coatings, chromium nitrides are especially interesting because of its good mechanical and tribological properties. In this work we have studied the influence of nitrogen gas flow on mechanical and tribological properties of chromium nitride thin films. The chromium nitride thin films were deposited on Al 5083 by DC magnetron sputtering technique at different nitrogen gas flows in the range of 5-20 sccm. Surface morphology and chemical composition of the films were studied using field emission scanning electron microscope (FESEM). The thickness of the films was determined by quartz crystal monitor and checked with FESEM cross-section images. The mechanical and tribological properties of the samples were investigated by means of nanoindentation and scratch tests. The results showed that films hardness increased with nitrogen gas flow, while coefficient of friction and scratch volume decreased. The structural investigations showed that these behaviors were due to the decrease of dislocation density and improvement of crystal quality.

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16

Chiu, Hsin-Tien y Shiow-Huey Chuang. "Tungsten nitride thin films prepared by MOCVD". Journal of Materials Research 8, n.º 6 (junio de 1993): 1353–60. http://dx.doi.org/10.1557/jmr.1993.1353.

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Polycrystalline tungsten nitride thin films were grown by low pressure metallo-organic chemical vapor deposition (MOCVD) using (tBuN)2W(NHtBu)2 as the single-source precursor. Deposition of uniform thin films on glass and silicon substrates was carried out at temperatures 723–923 K in a cold-wall reactor, while the precursor was vaporized at 333–363 K. The growth rates were 2–10 nm/min depending on the condition employed. Bulk elemental composition of the thin films, studied by wavelength dispersive spectroscopy (WDS), is best described as WNx (x = 0.7–1.8). The N/W ratio decreased with increasing temperature of deposition. X-ray diffraction (XRD) studies showed that the films have cubic structures with the lattice parameter a = 0.414–0.418 nm. The lattice parameter decreased with decreasing N/W ratio. Stoichiometric WN thin films showed an average lattice parameter a of 0.4154 nm. X-ray photoelectron spectroscopy (XPS) showed that binding energies of the W4f7/2, W4f5/2, and N1s electrons were 33.0, 35.0, and 397.3 eV, respectively. Elemental distribution within the films, studied by secondary ion mass spectroscopy (SIMS) and Auger spectroscopy depth profilings, was uniform. The SIMS depth profiling also indicated that C and O concentrations were low in the film. Volatile products trapped at 77 K were analyzed by gas chromatography–mass spectroscopy (GC–MS) and nuclear magnetic resonance (NMR). Isobutylene, acetonitrile, hydrogen cyanide, and ammonia were detected in the condensable mixtures. Possible reaction pathways were proposed to speculate the origin of these molecules.

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17

Krishna, M. Ghanashyam y K. A. Padmanabhan. "Titanium Nitride based multi-functional thin films". IOP Conference Series: Materials Science and Engineering 1221, n.º 1 (1 de marzo de 2022): 012007. http://dx.doi.org/10.1088/1757-899x/1221/1/012007.

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Abstract The aim of the present work is to demonstrate that the applications of TiN thin films can be expanded well beyond the traditional domains. For example, although TiN is known to exist in several sub-stoichiometric forms their properties have not been exploited fully. Using a patented sputtering process technology, we show that the Ti2N phase is semiconducting, possesses a band gap of the order of 3.5eV and a hardness in the region of 5-7 GPa. Thisimplies that Ti2N thin films can be candidates for light emitting diode applications. In some cases, reflectivity <2% in the visible region was also achieved which is useful for optical shielding applications. The nitrogen stoichiometry and thickness of TiN thin films can be tuned to achieve colours from blue to brown to golden yellow for decorative coating applications. TiN thin films can be a cost-effective replacement for Au since they also display a surface plasmon resonance at the same wavelength. The conductivity of TiN is sufficiently high to replace gold as an electrode material in electronic devices such as diodes. The properties of TiN-Si3N4 and TiN-Polyaniline composite thin films are also reported. The current work, thus, demonstrates the multi-functionality of TiN as an optical, opto-electronic and electronic material.

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18

Ţălu, Ştefan, Sebastian Stach, Shahoo Valedbagi, Reza Bavadi, S. Mohammad Elahi y Mihai Ţălu. "Multifractal characteristics of titanium nitride thin films". Materials Science-Poland 33, n.º 3 (1 de septiembre de 2015): 541–48. http://dx.doi.org/10.1515/msp-2015-0086.

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Abstract The study presents a multi-scale microstructural characterization of three-dimensional (3-D) micro-textured surface of titanium nitride (TiN) thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM) analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α). Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

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19

Kuzmin, A., A. Kalinko, A. Anspoks, J. Timoshenko y R. Kalendarev. "Study of Copper Nitride Thin Film Structure". Latvian Journal of Physics and Technical Sciences 53, n.º 2 (1 de abril de 2016): 31–37. http://dx.doi.org/10.1515/lpts-2016-0011.

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Abstract X-ray diffraction and x-ray absorption spectroscopy at the Cu K-edge were used to study the atomic structure in copper nitride (Cu3N) thin films. Textured nanocrystalline films are obtained upon dc magnetron sputtering on substrates heated at about 190 °C, whereas amorphous films having strongly disordered structure already in the second coordination shell of copper are deposited in the absence of heating.

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20

Gordon, Roy G., Umar Riaz y David M. Hoffman. "Chemical vapor deposition of aluminum nitride thin films". Journal of Materials Research 7, n.º 7 (julio de 1992): 1679–84. http://dx.doi.org/10.1557/jmr.1992.1679.

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The atmospheric pressure chemical vapor deposition of aluminum nitride coatings from hexakis(dimethylamido)dialuminum, Al2(N(CH3)2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, Rutherford backscattering, and forward recoil spectrometry. The films were deposited at 100–500 °C with growth rates up to 1500 Å/min. The films showed good adhesion to silicon, glass, and quartz substrates and were chemically inert. Rutherford backscattering analysis revealed that the N/Al ratio was 1.15 ± 0.05 for films deposited at 100–200 °C and 1.05 ± 0.05 for those deposited at 300–500 °C. Films deposited at 100–200 °C had refractive indexes in the range 1.65–1.80 whereas indexes for films deposited at 300–400 °C were 1.86–2.04. The films were transparent in the visible region. The optical bandgap varied from 5.0 eV for films deposited at 100 °C to 5.77 eV for those deposited at 500 °C. Films deposited at 100–200 °C were amorphous whereas those deposited at 300–500 °C were polycrystalline.

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21

NOMA, Masao, Eiji KOMATSU, Toshio TOKORO, Hiroaki OHNISHI, Keiji OGAWA y Heisaburo NAKAGAWA. "Hardness Property of Cubic Boron Nitride Thin Films and Tool Applications by Cubic Boron Nitride Thin Films". Shinku 50, n.º 5 (2007): 382–85. http://dx.doi.org/10.3131/jvsj.50.382.

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22

Feng, Jun Qin y Jun Fang Chen. "Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering". Advanced Materials Research 940 (junio de 2014): 11–15. http://dx.doi.org/10.4028/www.scientific.net/amr.940.11.

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Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.

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23

Mazumder, M. K., K. Kobayashi, J. Mitsuhashi y H. Koyama. "Stress-induced current in nitride and oxidized nitride thin films". IEEE Transactions on Electron Devices 41, n.º 12 (1994): 2417–22. http://dx.doi.org/10.1109/16.337458.

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24

Grant Norton, M., Paul G. Kotula y C. Barry Carter. "Growth and characterization of aluminum nitride thin films". Proceedings, annual meeting, Electron Microscopy Society of America 49 (agosto de 1991): 952–53. http://dx.doi.org/10.1017/s042482010008907x.

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Pulsed-laser ablation has been widely used for the fabrication of thin films of multicomponent oxide ceramics. More recently the technique has been successfully used to deposit highly oriented thin films of aluminum nitride (AIN). AIN thin films are of interest for a number of potential applications. These applications include heat sinks for high-power microcircuit applications and insulating and passivating layers in semiconductor devices. For all the proposed applications it is important to be able to produce highly oriented, dense crystalline films. It is also important that these films be essentially defect free, as for example, phonon scattering by defects and impurities can severely limit thermal conductivity.

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25

Majeed, U., I. Tariq, M. Wasib y M. K. Mustafa. "Surface study of RF magnetron sputtered silicon nitride thin films". Journal of Optoelectronic and Biomedical Materials 15, n.º 2 (abril de 2023): 55–64. http://dx.doi.org/10.15251/jobm.2023.152.55.

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Silicon nitride thin films were deposited on the one-sided P-type polished boron-doped silicon wafer substrate via RF magnetron sputtering using stochimetric silicon nitride target at various target-to-substrate distances. Target to substrate spacing, a nonconventional parameter, was varied to optimize the surface roughness and grain size. This optimization provided a normal distribution of homogenous, densely packed silicon nitride thin film free of surface cracks.. Atomic Force Microscopy was employed to explore the accurate surface roughness parameters of Silicon nitride thin films. The surface roughness and grain analysis for all samples exhibited a direct relation to each other and have an inverse correlation with the target to substrate spacing. The surface morphology of Si3N4 was analyzed by the following parameters; average roughness, root-mean square roughness, maximum peak to valley height, ten-point average roughness, skewness, and kurtosis of the line. The surface roughness of silicon nitride films has notable significance in the manufacturing of bio-sensor based on silicon nitride waveguides.

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26

Mustafa, M. K., U. Majeed y Y. Iqbal. "Effect on Silicon Nitride thin Films Properties at Various Powers of RF Magnetron Sputtering". International Journal of Engineering & Technology 7, n.º 4.30 (30 de noviembre de 2018): 39. http://dx.doi.org/10.14419/ijet.v7i4.30.22000.

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Silicon nitride thin films have numerous applications in microelectronics and optoelectronics fields due to their unique properties. In this work, silicon nitride thin films were produced using radio frequency (R.F.) magnetron sputtering technique at various sputtering powers. The prepared thin films were characterized with XRD, FE-SEM, FTIR, surface profiler, AFM and spectral reflectance techniques for structure, surface morphology, chemical bonding information, growth rate, surface roughness and optical properties. The results showed that silicon nitride thin films were amorphous in nature. The films were smooth and densely packed with no voids or cracks at the surface. FTIR characterization informed about Si-N bonding existence which confirmed the formation of silicon nitride films. The sputtering power showed the impetus effect on growth rate, surface roughness and optical properties of produced films.

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27

Tao, Qing, Yan Wei Sui, Sun Zhi y Wei Song. "Study on Arc Ion Plating Nitride Films of Microscopic Morphology and Micro-Hardness". Advanced Materials Research 306-307 (agosto de 2011): 274–79. http://dx.doi.org/10.4028/www.scientific.net/amr.306-307.274.

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AlN and TiN thin films are widely used in electronic devices and acoustic material and other fields because of its unique merit, the preparation of nitride thin films by using the arc ion plating has not been a systematic and deep study. The article presents our research procedure which the AlN and TiN thin films are deposited on stainless steel substrate by arc ion plating (AIP). The characteristics of thin films, for example microstructure, morphology, composition analysis and hardness, are examined and analyzed. The results showed that: Droplet-like particles appear in the microstructure of nitride thin films, and the grain size of droplet-like particles in AlN thin films is greater than in TiN thin films. The micro-hardness of nitride films preparation in experiment has improved significantly, and establish firmly basic for extending the application field of nitride film.

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28

Choeysuppaket, Attapol, Nirun Witit-Anun y Surasing Chaiyakun. "Characterization of ZrN Thin Films Deposited by Reactive DC Magnetron Sputtering". Advanced Materials Research 770 (septiembre de 2013): 350–53. http://dx.doi.org/10.4028/www.scientific.net/amr.770.350.

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In the past decade, many transition metal nitride thin films, especially titanium nitride (TiN) and zirconium nitride (ZrN), have been widely used as hard coatings, decorative coatings, diffusion barriers in IC technology and heat mirrors, as a result of their attractive properties of high hardness, corrosion resistance, thermal stability and electrical resistivity [1-4]. However, the ZrN films have shown significant performance regarding to its higher hardness, better corrosion resistance, lower electrical resistivity and warmer golden colour compared to those of the TiN films. ZrN films have shown significant performance advantages over TiN films [5-.

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29

Sato, Yuichi y Tatsuya Matsunaga. "Properties of GaN-Related Epitaxial Thin Films Grown on Sapphire Substrates as Transparent Conducting Electrodes". Materials Science Forum 783-786 (mayo de 2014): 1652–57. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.1652.

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Thin films of gallium nitride (GaN) and related nitride materials were prepared, and their properties as transparent conducting electrodes were investigated. GaN thin films were directly grown on sapphire single crystal substrates by the molecular beam epitaxy. Heavy doping of germanium was employed to reduce resistivity of the films, with sufficient reduction found to be possible while maintaining their epitaxial growth state. Optical transmission spectra of the films in the short wavelength region were slightly deteriorated by the heavy doping; however, this was successfully improved by growing GaN films under metal-rich conditions to increase the electron mobility and suppress unwanted increase of the carrier densities. In addition, the optical transmission spectra in the short wavelength region was improved also by alloying GaN with aluminum nitride, though the resistivities of these films were relatively higher than those of the unmodified GaN films. The prepared nitride thin films exhibited sufficiently suitable properties as transparent conducting electrodes for use in applications such as full-spectrum nitride-based solar cells.

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30

Cao, Chuanbao, Jiyu Fu y Hesun Zhu. "CARBON NITRIDE THIN FILMS DEPOSITED BY CATHODIC ELECTRODEPOSITION". International Journal of Modern Physics B 16, n.º 06n07 (20 de marzo de 2002): 1138–42. http://dx.doi.org/10.1142/s0217979202011007.

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Carbon nitride thin films were prepared by cathodic electrodeposition. The dicyandiamide compound dissovled in acetone was selected as the organic precursor. Single crystal silicon wafers and conductive glass (ITO) wafers were used as substrates. XPS measurements indicated that the films composed of carbon and nitrogen elements. The nitrogen content reached 41%. The polycrystalline β-C3N4 should exit in the prepared film from TED measurements. The nano hardness of the films on ITO substrates were as high as 13 GPa. The structure and properties were studies.

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31

Šimůrka, Lukáš, Selen Erkan y Tuncay Turutoglu. "Characterization of Silicon Nitride Thin Films on Glass". Defect and Diffusion Forum 368 (julio de 2016): 86–90. http://dx.doi.org/10.4028/www.scientific.net/ddf.368.86.

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The influence of process parameters on amorphous reactively sputtered silicon nitride thin films is reported in this study. The films were prepared with various argon and nitrogen flows, and sputter power in in-line horizontal coater by DC magnetron reactive sputtering from Si (10% Al) target. Refractive index and mechanical properties like residual stress, hardness and elastic modulus were studied. We show that process pressure has an important influence on mechanical properties of the sputtered film. On the other hand, the nitrogen content is the key factor for the optical properties of the films.

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32

Kester, D. J., K. S. Ailey, R. F. Davis y K. L. More. "Phase evolution in boron nitride thin films". Journal of Materials Research 8, n.º 6 (junio de 1993): 1213–16. http://dx.doi.org/10.1557/jmr.1993.1213.

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Boron nitride (BN) thin films were deposited on monocrystalline Si(100) wafers using electron beam evaporation of boron with simultaneous bombardment by nitrogen and argon ions. The effect of film thickness on the resultant BN phase was investigated using Fourier transform infrared (FTIR) spectroscopy and high resolution transmission electron microscopy (HRTEM). These techniques revealed the consecutive deposition of an initial 20 Å thick layer of amorphous BN, 20–50 Å of hexagonal BN having a layered structure, and a final layer of the polycrystalline cubic phase. The growth sequence of the layers is believed to result primarily from increasing biaxial compressive stresses. Favorable surface and interface energy and crystallographic relationships may also assist in the nucleation of the cubic and the hexagonal phases, respectively. The presence of the amorphous and hexagonal regions explains why there have been no reports of the growth of 100% cubic boron nitride on Si.

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33

Matsuoka, Morito, Ken’ichi Ono y Takashi Inukai. "Magnetic properties of cobalt nitride thin films". Applied Physics Letters 49, n.º 15 (13 de octubre de 1986): 977–79. http://dx.doi.org/10.1063/1.97501.

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Watanabe, Y., Y. Hara, T. Tokuda, N. Kitazawa y Y. Nakamura. "Surface oxidation of aluminium nitride thin films". Surface Engineering 16, n.º 3 (junio de 2000): 211–14. http://dx.doi.org/10.1179/026708400101517152.

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ULRICH, R., G. ZHAO y W. BROWN. "POTENTIOSTATIC TESTING OF THIN SILICON NITRIDE FILMS". Chemical Engineering Communications 137, n.º 1 (10 de junio de 1995): 23–32. http://dx.doi.org/10.1080/00986449508936363.

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Baskaran, R., A. V. Thanikai Arasu, E. P. Amaladass, L. S. Vaidhyanathan y D. K. Baisnab. "Superconducting fluctuations in molybdenum nitride thin films". Physica C: Superconductivity and its Applications 545 (febrero de 2018): 5–9. http://dx.doi.org/10.1016/j.physc.2017.11.006.

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Huang, Jia-Hong, Cheng-Han Lin y Ge-Ping Yu. "Texture evolution of vanadium nitride thin films". Thin Solid Films 688 (octubre de 2019): 137415. http://dx.doi.org/10.1016/j.tsf.2019.137415.

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Joo, Han-Yong, Hyeong Joon Kim, Sang June Kim y Sang Youl Kim. "Spectrophotometric analysis of aluminum nitride thin films". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17, n.º 3 (mayo de 1999): 862–70. http://dx.doi.org/10.1116/1.582035.

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Simpson, J. C. B., L. G. Earwaker y M. N. Khan. "Nuclear analysis of zirconium nitride thin films". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 24-25 (abril de 1987): 701–4. http://dx.doi.org/10.1016/s0168-583x(87)80229-x.

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Radnóczi, G., I. Kovács, O. Geszti, L. P. Bı́ró y G. Sáfrán. "Structure of amorphous carbon-nitride thin films". Surface and Coatings Technology 151-152 (marzo de 2002): 133–37. http://dx.doi.org/10.1016/s0257-8972(01)01626-7.

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Lippitz, A. y Th Hübert. "XPS investigations of chromium nitride thin films". Surface and Coatings Technology 200, n.º 1-4 (octubre de 2005): 250–53. http://dx.doi.org/10.1016/j.surfcoat.2005.02.091.

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Tsukimoto, S., M. Moriyama y Masanori Murakami. "Microstructure of amorphous tantalum nitride thin films". Thin Solid Films 460, n.º 1-2 (julio de 2004): 222–26. http://dx.doi.org/10.1016/j.tsf.2004.01.073.

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Machunze, R. y G. C. A. M. Janssen. "Stress gradients in titanium nitride thin films". Surface and Coatings Technology 203, n.º 5-7 (diciembre de 2008): 550–53. http://dx.doi.org/10.1016/j.surfcoat.2008.05.005.

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McKenzie, D. R., W. D. McFall, S. Reisch, B. W. James, I. S. Falconer, R. W. Boswell, H. Persing, A. J. Perry y A. Durandet. "Synthesis of cubic boron nitride thin films". Surface and Coatings Technology 78, n.º 1-3 (enero de 1996): 255–62. http://dx.doi.org/10.1016/0257-8972(95)02419-0.

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Méndez, J. M., S. Muhl, E. Andrade, L. Cota-Araiza, M. Farías y G. Soto. "Optical properties of boron nitride thin films". Diamond and Related Materials 3, n.º 4-6 (abril de 1994): 831–35. http://dx.doi.org/10.1016/0925-9635(94)90279-8.

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Sioshansi, Piran y Ray Bricault. "Hard Boron Nitride Thin Films by IBED". JOM 39, n.º 9 (septiembre de 1987): 63. http://dx.doi.org/10.1007/bf03257660.

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Vertchenko, Larissa, Lorenzo Leandro, Evgeniy Shkondin, Osamu Takayama, Igor V. Bondarev, Nika Akopian y Andrei V. Lavrinenko. "Cryogenic characterization of titanium nitride thin films". Optical Materials Express 9, n.º 5 (8 de abril de 2019): 2117. http://dx.doi.org/10.1364/ome.9.002117.

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Hoffman, David M. "Chemical vapour deposition of nitride thin films". Polyhedron 13, n.º 8 (abril de 1994): 1169–79. http://dx.doi.org/10.1016/s0277-5387(00)80253-3.

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Plass, M. F., W. Fukarek, A. Kolitsch, N. Schell y W. Möller. "Layered growth of boron nitride thin films". Thin Solid Films 305, n.º 1-2 (agosto de 1997): 172–84. http://dx.doi.org/10.1016/s0040-6090(96)09575-2.

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Jiang, Zhong-Tao, Tomuo Yamaguchi, Mitsuru Aoyama, Yoichiro Nakanishi y Leo Asinovsky. "Spectroellipsometric characterization of thin silicon nitride films". Thin Solid Films 313-314 (febrero de 1998): 298–302. http://dx.doi.org/10.1016/s0040-6090(97)00836-5.

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