Bibliografías temáticas / Nitride Thin Films

Literatura académica sobre el tema "Nitride Thin Films"

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Publicado: 6 de septiembre de 2023

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Artículos de revistas sobre el tema "Nitride Thin Films"

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Kikkawa, Shinichi, K. Sakon, Y. Kawaai y T. Takeda. "Magnetoresistance of Post-Annealed Iron Nitride Related Thin Films". Advances in Science and Technology 52 (octubre de 2006): 70–74. http://dx.doi.org/10.4028/www.scientific.net/ast.52.70.

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Iron nitrides thermally decompose to α-Fe releasing their nitrogen above 300°C. MR effect was found out in the thin films obtained by post-annealing of the following two kinds of sputter deposited iron nitride related films. (1) α-Fe particles dispersed in AlN granular film was obtained by an annealing of Al0.31Fe0.69N sputter deposited film in hydrogen. The MR=0.82% was found out in this nitride system. (2) Fe3O4 thin films were prepared by thermal decomposition of sputter deposited iron nitride films in low oxygen partial pressure. The iron nitrides were defect rock salt type γ΄˝-FeNx (0.5≤x≤0.7) and zinc blende type γ˝-FeNy (0.8≤y≤0.9) at the sputter nitrogen gas pressure of 1Pa and 6Pa. MR ratios of the oxide films were about 2%.
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Gerlach, J. W., J. Mennig y B. Rauschenbach. "Epitaxial gadolinium nitride thin films". Applied Physics Letters 90, n.º 6 (5 de febrero de 2007): 061919. http://dx.doi.org/10.1063/1.2472538.

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Preschilla A., Nisha, S. Major, Nigvendra Kumar, I. Samajdar y R. S. Srinivasa. "Nanocrystalline gallium nitride thin films". Applied Physics Letters 77, n.º 12 (2000): 1861. http://dx.doi.org/10.1063/1.1311595.

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Konyashin, Igor y German Fox-Rabinovich. "Nanograined Titanium Nitride Thin Films". Advanced Materials 10, n.º 12 (agosto de 1998): 952–55. http://dx.doi.org/10.1002/(sici)1521-4095(199808)10:12<952::aid-adma952>3.0.co;2-o.

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Jouan, Pierre Yves, Arnaud Tricoteaux y Nicolas Horny. "Elaboration of nitride thin films by reactive sputtering". Rem: Revista Escola de Minas 59, n.º 2 (junio de 2006): 225–32. http://dx.doi.org/10.1590/s0370-44672006000200013.

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The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.
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Kamat, Hrishikesh, Xingwu Wang, James Parry, Yueling Qin y Hao Zeng. "Synthesis and Characterization of Copper-Iron Nitride Thin Films". MRS Advances 1, n.º 3 (14 de diciembre de 2015): 203–8. http://dx.doi.org/10.1557/adv.2015.13.

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ABSTRACTIron nitride thin films have potential applications in the biomedicine and energy. The magnetic properties of these films can be tuned by incorporating copper nitride. In this study, iron copper nitride thin films have been fabricated by magnetron sputtering technique either by co-sputtering iron nitride and copper nitride or by layer stacking of the materials. The structure, morphology and magnetic properties of the films have been studied by scanning electron microscopy, x-ray diffraction, x-ray reflectivity and vibrating sample magnetometry.
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7

RUSOP, M., T. SOGA, T. JIMBO, M. UMENO y M. SHARON. "SEMICONDUCTING AMORPHOUS CAMPHORIC CARBON NITRIDE THIN FILMS". Surface Review and Letters 12, n.º 04 (agosto de 2005): 587–95. http://dx.doi.org/10.1142/s0218625x05007475.

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Amorphous carbon nitride ( a-CN x) films have been deposited by pulsed laser deposition at 0.8 Torr nitrogen gas ambient with varying substrate temperature from 20 to 500°C. The effects of the substrate temperature and ambient nitrogen gas pressure on the surface morphology, composition, nitrogen content, structure, and electrical properties of the a-CN x thin films have been investigated. The deposited a-CN x films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, Fourier transform infrared (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-Visible transmittance, and four-probe resistance measurement. It is found that the amorphous structure of a-CN x films can be changed by the substrate temperature (ST) and the a-CN x films with high nitrogen content have relatively high electrical resistivity. Also, graphitization is found to cause the reduction of nitrogen content and changes in the bonding structure of nitrogen atoms in the films.
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Linthicum, Kevin, Thomas Gehrke, Darren Thomson, Eric Carlson, Pradeep Rajagopal, Tim Smith, Dale Batchelor y Robert Davis. "Pendeoepitaxy of gallium nitride thin films". Applied Physics Letters 75, n.º 2 (12 de julio de 1999): 196–98. http://dx.doi.org/10.1063/1.124317.

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Bykhovski, A. D., V. V. Kaminski, M. S. Shur, Q. C. Chen y M. A. Khan. "Pyroelectricity in gallium nitride thin films". Applied Physics Letters 69, n.º 21 (18 de noviembre de 1996): 3254–56. http://dx.doi.org/10.1063/1.118027.

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Hultman, L. "Thermal stability of nitride thin films". Vacuum 57, n.º 1 (abril de 2000): 1–30. http://dx.doi.org/10.1016/s0042-207x(00)00143-3.

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Tesis sobre el tema "Nitride Thin Films"

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Shu, Rui. "Nonstoichiometric Multicomponent Nitride Thin Films". Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-170529.

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High entropy ceramics have rapidly developed as a class of materials based on high entropy alloys; the latter being materials that contain five or more elements in near-equal proportions. Their unconventional compositions and chemical structures hold promise for achieving unprecedented combinations of mechanical, electrical and chemical properties. In this thesis, high entropy ceramic films, (TiNbZrTa)Nx were deposited using reactive magnetron sputtering with segmented targets. The stoichiometry x was tuned with two deposition parameters, i.e., substrate temperature and nitrogen flow ratio fN, their effect on microstructure and mechanical, electric, and electrochemical properties were investigated. Understoichiometric MeNx (Me = TiNbZrTa, 0.25 ≤ x ≤ 0.59) films were synthesized at a constant fN when substrate temperature was varied from room temperature (RT) to 700 °C. For low-temperature deposition, the coatings exhibited fcc solid-solution polycrystalline structures. A NaCl-type structure with (001) preferred orientation was observed in MeN0.46 coating deposited at 400 ºC, while an hcp structure was found for the coatings deposited above 500 ºC. The maximum hardness value of 26 GPa as well as the highest   and   values (0.12 and 0.34 GPa) were obtained for the MeN0.46 coating. These films exhibited low RT electrical resistivities. In 0.1 M H2SO4 aqueous solution, the most corrosion resistant film was MeN0.46 featured dense structure and low roughness. The MeNx films (x=0, 0.57 < x ≤ 0.83) were deposited with different fN. The maximum hardness was achieved at 22.1 GPa for MeN0.83 film. Their resistivities increased from 95 to 424 μΩcm with increasing nitrogen content. The corrosion resistance is related to the amount of nitrogen in the films. The corrosion current density was around 10-8 A/cm2, while the films with lower nitrogen contents (x < 0.60) exhibited a nearly stable current plateau up to 4.0 V, similar to the metallic films, while the films with a higher nitrogen content only featured a plateau up to 2.0 V, above which a higher nitrogen content resulted in higher currents. The reason was that the oxidation of these films at potentials above about 2.0 V vs. Ag/AgCl resulted in the formation of porous oxide layers as significant fraction of the generated N2 was lost to the electrolyte. Hence, these observed effects of deposition temperature and nitrogen content on the overall properties of nonstoichiometric MeNx films provide insights regarding protective multicomponent nitride films, e.g. as corrosion resistant coatings on metallic bipolar plates in fuel cells or batteries.
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2

Khoshman, Jebreel M. "Spectroscopic ellipsometry charactarization of single and multilayer aluminum nitride / indium nitride thin film systems". Ohio : Ohio University, 2005. http://www.ohiolink.edu/etd/view.cgi?ohiou1129584189.

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Kerdsongpanya, Sit. "Scandium Nitride Thin Films for Thermoelectrics". Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-85917.

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Thermoelectric devices are one of the promising energy harvesting technologies, since they can convert heat (i.e. a temperature gradient) to electricity. This result leads us to use them to harvest waste heat from heat engines or in power plants to generate usable electricity. Moreover, thermoelectric devices can also perform cooling. The conversion process is clean, with no emission of greenhouse gases during the process. However, the converting efficiency of thermoelectrics is very low because of the materials limitations of the thermoelectric figure of merit (ZTm). Thus, there is high demand to maximize the ZTm. I have discovered that ScN has high power factor 2.5 mW/(mK2) at 800 K, due to low metalliclike electrical resistivity (∼3.0 μΩm) with retained relatively large Seebeck coefficient of -86 μV/K. The ScN thin films were grown by reactive dc magnetron sputtering from Sc targets. For ScN, X-ray diffraction, supported by transmission electron microscopy, show that we can obtain epitaxial ScN(111) on Al2O3(0001). We also reported effects on thermoelectric properties of ScN with small changes in the composition with the power factor changing one order of magnitude depending on e.g. oxygen, carbon and fluorine content which were determined by elastic recoil detection analysis. The presence of impurities may influence the electronic density of states or Fermi level (EF) which could yield enhancement of power factor. Therefore, the effects of defects and impurities on the electronic density of states of scandium nitride were investigated using first-principles calculations with general gradient approximation and hybrid functionals for the exchange correlation energy. Our results show that for Sc and N vacancies can introduce asymmetric peaks in the density of states close to the Fermi level. We also find that the N vacancy states are sensitive to total electron concentration of the system due to their possibility for spin polarization. Substitutional point defects shift the Fermi level in the electronic band according to their valence but do not introduce sharp features. The energetics and electronic structure of defect pairs are also studied. By using hybrid functionals, a correct description of the open band gap of scandium nitride is obtained, in contrast to regular general gradient approximation. Our results envisage ways for improving the thermoelectric figure of merit of ScN by electronic structure engineering through stoichiometry tuning and doping.
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Neidhardt, Jörg. "Fullerene-like carbon nitride thin solid films /". Linköping : Univ, 2004. http://www.bibl.liu.se/liupubl/disp/disp2004/tek877s.pdf.

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Sanchez, Mathon Gustavo. "Piezoelectric aluminum nitride thin films by PECVD". Limoges, 2009. https://aurore.unilim.fr/theses/nxfile/default/9224e391-3c48-4c10-9166-c2a2bed3c5f4/blobholder:0/2009LIMO4007.pdf.

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Des couches minces polycristallines d'AIN ont été réalisées en utilisant une technique CVD assistée par plasma micro-onde. Les paramètres, distance plasma - injecteur, température du substrat, polarisation RF du porte - substrat ont été optimisés. Il a été possible de contrôler l’orientation préférentielle <0001> ou <1010>, intéressantes pour des applications piézoélectriques. Les mécanismes de croissance qui ont conduit au développement des microstructures dans les différentes conditions ont été expliqués. La comparaison avec une technique PVD a permis d’enricher la discussion. Les performances piézoélectriques des couches obtenues ont été caractérisées par construction des dispositifs électroacoustiques d’onde de surface et d’onde de volume. Seules les couches orientées <0001> ont montré une réponse piézoélectrique et une vitesse acoustique adéquates. Une analyse exhaustive a été conduite pour expliquer les possibles raisons de ces comportements
Polycrystalline aluminum nitride thin films were produced with a microwave-plasma enhanced chemical vapor deposition technique. The plasma-injector distance, the substrate temperature and the RF bias were the main variables which allowed achieving this objective. At the time, it was possible to control the preferential orientation as <0001> or <1010>, both interesting for piezoelectric applications. The growth mechanisms that conducted to film microstructure development under different process conditions were explained, enriched by the comparison with a physical vapor deposition sputtering technique. The obtained films were characterized in their piezoelectric performance, including the construction of surface acoustic wave devices and bulk acoustic wave devices. Adequate piezoelectric response and acoustic velocities were obtained for <0001> oriented films, while <1010> oriented films did not show piezoelectric response under the configurations essayed. An extensive analysis was done in order to explain these behaviors
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Knight, Patrick J. "Nitride formation at silicon surfaces". Thesis, University of Southampton, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.238903.

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Taylor, Matthew Bruce y matthew taylor@rmit edu au. "A Study of Aluminium Nitride and Titanium Vanadium Nitride Thin Films". RMIT University. Applied Science, 2007. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20080529.151820.

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Thin film coatings are used to improve the properties of components and products in such diverse areas as tool coatings, wear resistant biological coatings, miniature integrated electronics, micro-mechanical systems and coatings for optical devices. This thesis focuses on understanding the development of intrinsic stress and microstructure in coatings of the technologically important materials of aluminium nitride (AlN) and titanium vanadium nitride (TiVN) deposited by filtered cathodic arc deposition. Thin films of AlN are fabricated under a variety of substrate bias regimes and at different deposition rates. Constant substrate bias was found to have a significant effect on the stress and microstructure of AlN thin films. At low bias voltages, films form with low stress and no preferred orientation. At a bias voltage of -200 V, the films exhibited the highest compressive stress and contained crystals preferentially oriented with their c axis in the plane of the film. At the highest bias of -350 V, the film forms with low stress yet continue to contain crystallites with their c axis constrained to lie in the plane of the film. These microstructure changes with bias are explained in terms of an energy minimisation model. The application of a pulsed high voltage bias to a substrate was found to have a strong effect on the reduction of intrinsic stress within AlN thin films. A model has been formulated that predicts the stress in terms of the applied voltage and pulsing rate, in terms of treated volumes known as thermal spikes. The greater the bias voltage and the higher the pulse rate, the greater the reduction in intrinsic stress. At high pulsing and bias rates, a strong preference for the c axis to align perpendicular to the substrate is seen. This observation is explained by dynamical effects of the incident ions on the growing film, encouraging channelling and preferential sputtering. For the first time, the effect of the rate of growth on AlN films deposited with high voltage pulsed bias was investigated and found to significantly change the stress and microstructure. The formation of films with highly tensile stress, highly compressive stress and nano-composites of AlN films containing Al clusters were seen. These observations are explained in terms of four distinct growth regions. At low rates, surface diffusion and shadowing causes highly porous structures with tensile stress; increased rates produced Al rich films of low stress; increasing the growth rate further led to a dense AlN film under compressive stress and the highest rates produce dense, low stress, AlN due to increased levels of thermal annealing. Finally this thesis analyses the feasibility of forming ternary alloys of high quality TiVN thin films using a dual cathode filtered cathodic arc. The synthesised films show exceptional hardness (greater than either titanium nitride or vanadium nitride), excellent mixing of the three elements and interesting optical properties. An optimum concentration of 23% V content was found to give the highest stress and hardness.
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Zhang, Xuefei. "Synthesis and Characterization of Zr1-xSixN Thin Film Materials". Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/ZhangX2007.pdf.

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Anutgan, Mustafa. "Investigation Of Plasma Deposited Boron Nitride Thin Films". Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/12608611/index.pdf.

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Hexagonal boron nitride (h-BN) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD). Effects of heat treatment and source gases on the structure and physical properties are investigated. Chemical bonding is analyzed in comparison with the better understood isoelectronic carbon compound, graphite. It seems that the basic difference between h-BN and graphite arises from the different electronegativities of boron and nitrogen atoms. Optical absorptions in UV-visible range for crystalline and amorphous structures are outlined. The expressions used for the evaluation of mechanical stress induced in thin films are derived. The deposited films are considered to be turbostratic as they do not exhibit the characteristic optical absorption spectra of a crystal. A new system, stylus profilometer, is implemented and installed for thin film thickness and mechanical stress measurements. Hydrogen atom density within the films, estimated from FTIR spectroscopy, is found to be a major factor affecting the order and mechanical stress of the films. Heat treatment of the films reduces the hydrogen content, does not affect the optical gap and slightly increases the Urbach energy probably due to an increased disorder. Increasing the nitrogen gas flow rate in the source gas results in more ordered films. The virtual crystal of these films is detected to be unique. Relative bond concentrations of the constituent elements indicate a ternary boron-oxygen-nitrogen structure. The physical properties of h-BN such as high resistivity and wide band gap seem suitable for optoelectronic applications such as gate dielectrics in thin film transistors and light emitting devices in the blue region.
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Joelsson, Torbjörn. "Nanostructural design of transition metal nitride thin films /". Linköping : Dept. of physics and measurement technology, Univ, 2005. http://www.bibl.liu.se/liupubl/disp/disp2005/tek923s.pdf.

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Libros sobre el tema "Nitride Thin Films"

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Jamal, Deen M., Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division y Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (4th : 1997 : Montreal, Quebec), eds. Silicon nitride and silicon dioxide thin insulating films: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. Pennington, New Jersey: Electrochemical Society, 1997.

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Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (9th 2007 Chicago, Ill.). Silicon nitride, silicon dioxide, and emerging dielectrics 9. Editado por Sah R. E, Electrochemical Society. Dielectric Science and Technology Division. y Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2007.

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Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (9th 2007 Chicago, Ill.). Silicon nitride, silicon dioxide, and emerging dielectrics 9. Editado por Sah R. E, Electrochemical Society. Dielectric Science and Technology Division. y Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2007.

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Luches, Armando. Laser-assisted deposition of boron nitride thin films and nanotubes. Hauppauge, N.Y: Nova Science Publisher's, 2010.

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Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (1988 Chicago, Ill.). Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. Pennington, NJ: Electrochemical Society, 1989.

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Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (2nd 1986 San Diego, Calif.). Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. Pennington, NJ (10 S. Main St., Pennington 08534-2696: Electrochemical Society), 1987.

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Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (7th 2003 Paris, France). Silicon nitride and silicon dioxide thin insulating films VII: Proceedings of the international symposium. Editado por Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division y Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2003.

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Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (5th 1999 Seattle, Wash.). Silicon nitride and silicon dioxide thin insulating films: Proceedings of the fifth international symposium. Pennington, NJ (10 S. Main St., Pennington 08534-2696: Electrochemical Society), 1999.

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Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (3rd 1994 San Francisco, Calif.). Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. Pennington, NJ (10 S. Main St., Pennington 08534-2696: Electrochemical Society), 1994.

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Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (8th 2005 Québec, Québec). Silicon nitride, silicon dioxide thin insulating films, and other emerging diele[c]trics VIII: Proceedings of the international symposium. Editado por Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division y Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2005.

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Capítulos de libros sobre el tema "Nitride Thin Films"

1

Eklund, Per, Sit Kerdsongpanya y Björn Alling. "Transition-Metal-Nitride-Based Thin Films as Novel Thermoelectric Materials". En Thermoelectric Thin Films, 121–38. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20043-5_6.

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O'Mahony, Donagh y James G. Lunney. "Group III Nitride Growth". En Pulsed Laser Deposition of Thin Films, 291–312. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch13.

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Madan, Anita y Scott A. Barnett. "Fundamentals of Nitride-Based Superlattice Thin Films". En Materials Science of Carbides, Nitrides and Borides, 187–204. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4562-6_11.

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Kumar, Dhruva y Bibhu Prasad Swain. "Characterization of Silicon Carbo-Nitride Thin Films". En Lecture Notes in Electrical Engineering, 131–38. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4765-7_14.

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Krishna, Shibin, Neha Aggarwal, Lalit Goswami y Govind Gupta. "Growth Dynamics of Epitaxial Gallium Nitride Films Grown on c-Sapphire Substrates". En Recent Advances in Thin Films, 75–101. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6116-0_4.

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Gupta, Mukul. "Synthesis, Stability and Self-Diffusion in Iron Nitride Thin Films: A Review". En Recent Advances in Thin Films, 131–79. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6116-0_6.

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Wang, Xingwu, James P. Parry, Hrishikesh Kamat, Ruikun Pan y Hao Zeng. "Iron-Copper Nitride Thin Films Fabricated by Sputtering". En Developments in Strategic Ceramic Materials, 239–50. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119211747.ch19.

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Ponce, Fernando A. "Microstructure of Epitaxial III–V Nitride Thin Films". En GaN and Related Materials, 141–70. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-5.

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Kamat, Hrishikesh, Xingwu Wang, Yueling Qin, James Parry y Hao Zeng. "Magnetic Studies of Copper Incorporated Iron Nitride Thin Films". En Proceedings of the 41st International Conference on Advanced Ceramics and Composites, 125–36. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2018. http://dx.doi.org/10.1002/9781119474678.ch12.

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Kikkawa, Shinichi, K. Sakon, Y. Kawaai y T. Takeda. "Magnetoresistance of Post-Annealed Iron Nitride Related Thin Films". En Advances in Science and Technology, 70–74. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908158-08-7.70.

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Actas de conferencias sobre el tema "Nitride Thin Films"

1

Oshikane, Yasushi. "Asymmetric metal-insulator-metal (MIM) structure formed by pulsed Nd:YAG laser deposition with titanium nitride (TiN) and aluminum nitride (AlN)". En Nanostructured Thin Films X, editado por Tom G. Mackay, Akhlesh Lakhtakia y Yi-Jun Jen. SPIE, 2017. http://dx.doi.org/10.1117/12.2273483.

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Kobayashi, Kiyoteru, Hiroshi Miyatake y Makoto Hirayama. "Conduction in Thin Nitride Films and Oxide/Nitride Films". En 1989 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1989. http://dx.doi.org/10.7567/ssdm.1989.s-d-8.

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Yu, X. Z., Z. Z. Jiang, Y. Yang, W. Pan y W. Z. Shen. "Weak localization in indium nitride films". En Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792265.

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Chubarov, M., H. Pedersen, H. Hogberg, S. Filippov, J. A. A. Engelbrecht, J. O'Connel y A. Henry. "Characterization of Boron Nitride thin films". En 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). IEEE, 2013. http://dx.doi.org/10.1109/cleopr.2013.6600222.

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Allen, Thomas H. "Nonconventional materials in optical thin films". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mj2.

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Ion beam sputtering was used to deposit a series of silicon nitride films. These films, ranging in chemical composition from silicon to stoichiometric silicon nitride, were deposited with various deposition parameters. The variations in optical constants and stresses with chemical composition were investigated using Rutherford backscatter spectroscopy to determine both the chemical composition and density. Aluminum and boron nitride films were also deposited with ion beam sputtering. The properties of these materials are discussed. An alternate deposition process, plasma plating, was used to investigate the effects of hydrogen on the optical and mechanical properties of silicon nitride, silicon, and germanium films. The optical constants, stresses, and bandgap energies were measured and compared with those of nonhydrogenated films. It was found that the incorporation of hydrogen in these materials resulted in a decrease in refractive index and an increase in bandgap energy. The role of hydrogen in altering film properties and how it is incorporated into the atomic structure of these materials are discussed.
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Kumar, N., K. Pourrezaei, B. Singh y R. J. DeMaria. "RF Reactively Sputtered Aluminum Nitride Thin Films". En Sixth IEEE International Symposium on Applications of Ferroelectrics. IEEE, 1986. http://dx.doi.org/10.1109/isaf.1986.201101.

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Andersen, K. N., P. C. Nielsen y W. Svendsen. "Silicon rich nitride thin films and waveguides". En Integrated Photonics Research. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/ipr.2002.itha4.

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Jiang, Liudi, A. G. Fitzgerald, M. J. Rose, A. Lousa y S. Gimeno. "Cubic boron nitride films prepared with different deposition times". En 4th International Conference on Thin Film Physics and Applications, editado por Junhao Chu, Pulin Liu y Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408326.

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Scholz, Ferdinand, Oliver Rettig, Jan-Patrick Scholz, Natja Steiger, Sebastian Bauer, Yueliang Li, Haoyuan Qi, Johannes Biskupek, Ute Kaiser y Klaus Thonke. "Growth and optical properties of wurtzite AlBGaN thin films (Conference Presentation)". En Gallium Nitride Materials and Devices XIV, editado por Hadis Morkoç, Hiroshi Fujioka y Ulrich T. Schwarz. SPIE, 2019. http://dx.doi.org/10.1117/12.2506774.

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Shi, Xiaolei, Yigang Chen, Weimin Shi y Linjun Wang. "Study of high temperature piezoelectric scandium aluminum nitride thin films". En Seventh International Conference on Thin Film Physics and Applications, editado por Junhao Chu y Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888228.

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Informes sobre el tema "Nitride Thin Films"

1

Apen, E. A., L. M. Atagi, R. S. Barbero, B. F. Espinoza, K. M. Hubbard, K. V. Salazar, J. A. Samuels, D. C. Smith y D. M. Hoffman. New deposition processes for the growth of oxide and nitride thin films. Office of Scientific and Technical Information (OSTI), noviembre de 1998. http://dx.doi.org/10.2172/676883.

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Farrell, R., V. R. Pagan, A. Kabulski, Sridhar Kuchibhatl, J. Harman, K. R. Kasarla, L. E. Rodak, P. Famouri, J. Peter Hensel y D. Korakakis. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films. Office of Scientific and Technical Information (OSTI), mayo de 2008. http://dx.doi.org/10.2172/1015474.

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Snow, G. Characterization of dc magnetron sputtering systems for the deposition of tantalum nitride, titanium, and palladium thin films for HMC (hybrid microcircuit) applications. Office of Scientific and Technical Information (OSTI), julio de 1989. http://dx.doi.org/10.2172/5884585.

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Habermehl, Scott D., Peggy J. Clews, Sasha Summers y Sukwon Choi. Computational and Experimental Characterization of Aluminum Nitride-Silicon Carbide Thin Film Composites for High Temperature Sensor Applications. Office of Scientific and Technical Information (OSTI), diciembre de 2014. http://dx.doi.org/10.2172/1490541.

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