Artículos de revistas sobre el tema "Nitridation"
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Mylinh, Dang Thy, Dae-Ho Yoon y Chang-Yeoul Kim. "Aluminum Nitride Formation From Aluminum Oxide/Phenol Resin Solid-Gel Mixture By Carbothermal Reduction Nitridation Method". Archives of Metallurgy and Materials 60, n.º 2 (1 de junio de 2015): 1551–55. http://dx.doi.org/10.1515/amm-2015-0171.
Texto completoAksenov, Igor, Yoshinobu Nakada y Hajime Okumura. "Nitridation of GaAs (001)-2×4 Surface Studied by Auger-Electron Spectroscopy". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 136–41. http://dx.doi.org/10.1557/s1092578300002350.
Texto completoYang, Xue Qing, Nai Peng y Cheng Ji Deng. "Nitridation Isothermal Kinetics of In Situ β-Sialon Bonded Al2O3-C Refractories". Key Engineering Materials 697 (julio de 2016): 572–75. http://dx.doi.org/10.4028/www.scientific.net/kem.697.572.
Texto completoKim, Dae-Young, Pil-Ryung Cha, Ho-Seok Nam, Hyun-Joo Choi y Kon-Bae Lee. "Effect of Material and Process Variables on Characteristics of Nitridation-Induced Self-Formed Aluminum Matrix Composites—Part 1: Effect of Reinforcement Volume Fraction, Size, and Processing Temperatures". Materials 13, n.º 6 (13 de marzo de 2020): 1309. http://dx.doi.org/10.3390/ma13061309.
Texto completoLi, Xu, Jianyun Zhao, Ting Liu, Yong Lu y Jicai Zhang. "Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE". Materials 14, n.º 7 (31 de marzo de 2021): 1722. http://dx.doi.org/10.3390/ma14071722.
Texto completoKim, Dae-Young, Pil-Ryung Cha, Ho-Seok Nam, Hyun-Joo Choi y Kon-Bae Lee. "Effect of Material and Process Variables on Characteristics of Nitridation-Induced Self-Formed Aluminum Matrix Composites—Part 2: Effect of Nitrogen Flow Rates and Processing Temperatures". Materials 13, n.º 5 (8 de marzo de 2020): 1213. http://dx.doi.org/10.3390/ma13051213.
Texto completoChoi, Jung Hun, Suresh Kumar, Shi Yang Ji, Shojiki Kanako, Takashi Hanada, Ryuji Katayama y Takashi Matsuoka. "Effect of Nitridation on Indium-Composition of InGaN Films". Key Engineering Materials 508 (marzo de 2012): 193–98. http://dx.doi.org/10.4028/www.scientific.net/kem.508.193.
Texto completoPeng, Zhao Yang, Yi Yu Wang, Hua Jun Shen, Yun Bai, Yi Dan Tang, Xi Ming Chen, Cheng Zhan Li, Ke An Liu y Xin Yu Liu. "Re-Investigation of SiC/SiO2 Interface Passivation by Nitrogen Annealing". Materials Science Forum 897 (mayo de 2017): 335–39. http://dx.doi.org/10.4028/www.scientific.net/msf.897.335.
Texto completoKumar, S. G. Prasanna, Nagaraju Kottam, R. Hari Krishna, M. N. Chandra Prabha, R. Preetham, Santosh Behara y Tiju Thomas. "Influence of Nitridation on Structural and Photoluminescence Behaviour of CaZrO3:Eu3+ Nanophosphors". Asian Journal of Chemistry 32, n.º 6 (2020): 1515–19. http://dx.doi.org/10.14233/ajchem.2020.22586.
Texto completoZhang, Qian, Xu Li, Jianyun Zhao, Zhifei Sun, Yong Lu, Ting Liu y Jicai Zhang. "Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10–13) AlN Grown on Sapphire by HVPE". Micromachines 12, n.º 10 (25 de septiembre de 2021): 1153. http://dx.doi.org/10.3390/mi12101153.
Texto completoAkahane, Yoshiyuki, Takuo Kano, Kyosuke Kimura, Hiroki Komatsu, Yukimune Watanabe, Tomohiko Yamakami y Kiichi Kamimura. "Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation". Materials Science Forum 778-780 (febrero de 2014): 631–34. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.631.
Texto completoFong, Chee Yong, Sha Shiong Ng, Fong Kwong Yam, Abu Hassan Haslan y Hassan Zainuriah. "Effects of Nitridation Temperatures on Gallium Nitride Thin Films Formed on Silicon Substrates". Advanced Materials Research 895 (febrero de 2014): 57–62. http://dx.doi.org/10.4028/www.scientific.net/amr.895.57.
Texto completoLerch, Martin. "Nitridation of Zirconia". Journal of the American Ceramic Society 79, n.º 10 (9 de agosto de 2005): 2641–44. http://dx.doi.org/10.1111/j.1151-2916.1996.tb09028.x.
Texto completoWang, X. S., G. Zhai, J. Yang, L. Wang, Y. Hu, Z. Li, J. C. Tang, X. Wang, K. K. Fung y N. Cue. "Nitridation of Si()". Surface Science 494, n.º 2 (noviembre de 2001): 83–94. http://dx.doi.org/10.1016/s0039-6028(01)01409-1.
Texto completoLin, Tie Song y De Chang Jia. "Influence of Sintering Aids on the Nitridation of Reaction Bonded Si3N4/BN Ceramics". Key Engineering Materials 353-358 (septiembre de 2007): 1497–500. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.1497.
Texto completoHayashi, Fumitaka y Masakazu Iwamoto. "Almost Complete Nitridation of Mesoporous Silica to Mesoporous Silicon (Oxy)Nitride with Ammonia". Advances in Science and Technology 68 (octubre de 2010): 159–64. http://dx.doi.org/10.4028/www.scientific.net/ast.68.159.
Texto completoZhang, Dong Guo, Zhong Hui Li, Da Qing Peng y Xun Dong. "Influence of the Nitridation Time after the Al Pre-Seeded Layer on the Properties of GaN Layer Grown on Si (1 1 1)". Advanced Materials Research 887-888 (febrero de 2014): 446–49. http://dx.doi.org/10.4028/www.scientific.net/amr.887-888.446.
Texto completoLi, Yong, Xiaoyan Zhu, Yawei Zhai, Jiaping Wang, Wendong Xue, Junhong Chen y Jialin Sun. "Research on High Performance Fe3Si-Si3N4-SiC Composite Used for Blast Furnace". Open Materials Science Journal 6, n.º 1 (18 de enero de 2012): 1–5. http://dx.doi.org/10.2174/1874088x01206010001.
Texto completoLi, Yong, Xiao Yan Zhu, Ya Wei Zhai, Jia Ping Wang, Wen Dong Xue, Jun Hong Chen y Jia Lin Sun. "Study on High Performance Fe3Si-Si3N4-SiC Composite Preparation and its Application in Blast Furnace". Advanced Materials Research 194-196 (febrero de 2011): 1547–53. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.1547.
Texto completoShin, Jong-Hyeon, Yong-Hyun Kim, Jong-Bae Park, Dae-Chul Kim, Young-Woo Kim, Jong-Sik Kim y Jung-Sik Yoon. "A Study on the Characteristics of Inductively Coupled Plasma Nitridation Process". Coatings 12, n.º 10 (20 de septiembre de 2022): 1372. http://dx.doi.org/10.3390/coatings12101372.
Texto completoLan, Li, Luo, Zhou, Wei y Yin. "Direct Nitridation Synthesis of Quasi-Spherical β-Si3N4 Powders with CaF2 Additive". Materials 12, n.º 18 (5 de septiembre de 2019): 2870. http://dx.doi.org/10.3390/ma12182870.
Texto completoYe, Cong, Jia-Ji Wu, Chih-Hung Pan, Tsung-Ming Tsai, Kuan-Chang Chang, Huaqiang Wu, Ning Deng y He Qian. "Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation". RSC Advances 7, n.º 19 (2017): 11585–90. http://dx.doi.org/10.1039/c7ra01104k.
Texto completoJia, Ting Ting, Xin Hong Cheng, Duo Cao, Da Wei Xu, Zhong Jian Wang, Chao Xia, Li Zheng y Yue Hui Yu. "Impact of In Situ NH3 Plasma Treatments on the Interface between HfLaOx Thin Film and InP Substrate". Advanced Materials Research 721 (julio de 2013): 67–72. http://dx.doi.org/10.4028/www.scientific.net/amr.721.67.
Texto completoMilakhin D. S., Malin T. V., Mansurov V. G., Kozhukhov A. S., Novikova N. N., Yakovlev V. A. y Zhuravlev K. S. "Determination of the AlN nucleation layer thickness formed on the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-(0001) surface during nitridation process by XPS and IR spectroscopy". Semiconductors 56, n.º 8 (2022): 518. http://dx.doi.org/10.21883/sc.2022.08.54455.23.
Texto completoZhu, Xiao Yan, Yong Li, Jia Ping Wang, Ya Wei Zhai, Jun Bo y Jian Fang Zhang. "Preparation of Both Reactive α-Si3N4 and SiC Mixed Powder in Flame-Isolation Nitridation Shuttle Kiln". Key Engineering Materials 512-515 (junio de 2012): 17–23. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.17.
Texto completoSuzuki, Takuma, Junji Senzaki, Tetsuo Hatakeyama, Kenji Fukuda, Takashi Shinohe y Kazuo Arai. "Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation". Materials Science Forum 615-617 (marzo de 2009): 557–60. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.557.
Texto completoSuehiro, Takayuki, Naoto Hirosaki, Yoshinobu Yamamoto, Toshiyuki Nishimura, Mamoru Mitomo, Junichi Takahashi y Hisanori Yamane. "Preparation of Lutetium Nitride by Direct Nitridation". Journal of Materials Research 19, n.º 3 (marzo de 2004): 959–63. http://dx.doi.org/10.1557/jmr.2004.19.3.959.
Texto completoMa, Bei Yue, Ying Li, Li Bing Xu y Yu Chun Zhai. "In Situ Synthesis of β-Sialon Powder from Fly Ash". Advanced Materials Research 194-196 (febrero de 2011): 2179–82. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.2179.
Texto completoBalerio, Robert, Hyosim Kim, Andres Morell-Pacheco, Laura Hawkins, Ching-Heng Shiau y Lin Shao. "ZrN Phase Formation, Hardening and Nitrogen Diffusion Kinetics in Plasma Nitrided Zircaloy-4". Materials 14, n.º 13 (25 de junio de 2021): 3572. http://dx.doi.org/10.3390/ma14133572.
Texto completoNakanuma, Takato, Yu Iwakata, Arisa Watanabe, Takuji Hosoi, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura y Heiji Watanabe. "Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces". Japanese Journal of Applied Physics 61, SC (2 de marzo de 2022): SC1065. http://dx.doi.org/10.35848/1347-4065/ac4685.
Texto completoFukushima, Jun, Keiichiro Kashimura y Hirotsugu Takizawa. "Nitridation Reaction of Titanium Powders by 2.45 GHz Multimode Microwave Irradiation using a SiC Susceptor in Atmospheric Conditions". Processes 8, n.º 1 (21 de diciembre de 2019): 20. http://dx.doi.org/10.3390/pr8010020.
Texto completoChao, Shou-Yen, Wen-How Lan, Shou-Kong Fan, Zi-Wen Zhon y Mu-Chun Wang. "Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments". Micromachines 13, n.º 11 (29 de octubre de 2022): 1861. http://dx.doi.org/10.3390/mi13111861.
Texto completoAkahane, Yoshiyuki, Kyosuke Kimura, Takuo Kano, Yukimune Watanabe, Tomohiko Yamakami, Shinji Fujimaki y Kiichi Kamimura. "Plasma Nitridation of 4H-SiC by Glow Discharge of N2/H2 Mixed Gases". Materials Science Forum 821-823 (junio de 2015): 504–7. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.504.
Texto completoYang, Tao, Yan Gai Liu, Ding Yun Ye, Qi Wang, Zhao Hui Huang y Ming Hao Fang. "Phase Behavior Analysis of Low-Grade Bauxite and Rutile by Carbothermal Reduction-Nitridation". Advanced Materials Research 624 (diciembre de 2012): 239–43. http://dx.doi.org/10.4028/www.scientific.net/amr.624.239.
Texto completoSung, Mei-Chen, Ya-Fen Wang, Shang-Che Chen y Cheng-Hsien Tsai. "Two-Stage Plasma-Thermal Nitridation Processes for the Production of Aluminum Nitride Powders from Aluminum Powders". Materials 12, n.º 3 (24 de enero de 2019): 359. http://dx.doi.org/10.3390/ma12030359.
Texto completoIGARI, Yoshiyuki, Izumo ABE y Isao KUSUNOKI. "Nitridation of Aluminum Surface." SHINKU 45, n.º 5 (2002): 463–67. http://dx.doi.org/10.3131/jvsj.45.463.
Texto completoHabraken, F. H. P. M., E. L. J. Geerlings, R. H. G. Tijhaar, A. Slomp y W. F. van der Weg. "Thermal nitridation of SiOxHyfilms". Journal of Applied Physics 62, n.º 6 (15 de septiembre de 1987): 2573–75. http://dx.doi.org/10.1063/1.339429.
Texto completoCeravola, Roberta, Carlos Frontera, Judith Oró-Solé, Ashley P. Black, Clemens Ritter, Ignasi Mata, Elies Molins, Josep Fontcuberta y Amparo Fuertes. "Topochemical nitridation of Sr2FeMoO6". Chemical Communications 55, n.º 21 (2019): 3105–8. http://dx.doi.org/10.1039/c8cc09845j.
Texto completoCofer, C. G. y J. A. Lewis. "Chromium catalysed silicon nitridation". Journal of Materials Science 29, n.º 22 (noviembre de 1994): 5880–86. http://dx.doi.org/10.1007/bf00366871.
Texto completoWright, P. J., A. Kermani y K. C. Saraswat. "Nitridation and post-nitridation anneals of SiO/sub 2/ for ultrathin dielectrics". IEEE Transactions on Electron Devices 37, n.º 8 (1990): 1836–41. http://dx.doi.org/10.1109/16.57134.
Texto completoYin, Hong Feng y Yun Tang. "Preparation of Ca-α-Sialon-SiC Multiphase Ceramics from Gasification Slag". Materials Science Forum 695 (julio de 2011): 328–31. http://dx.doi.org/10.4028/www.scientific.net/msf.695.328.
Texto completoQin, Fu Wen, Ai Min Wu, Feng Chun Liu, Bao Dan Liu y Xin Jiang. "Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method". Materials Science Forum 654-656 (junio de 2010): 1716–19. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1716.
Texto completoHuang, Qing, Guojin Zheng y Tian Wu. "Surface nitridation of Ta powder by molten-salt electrolysis of Ta2O5 under N2 atmosphere". Functional Materials Letters 13, n.º 07 (3 de septiembre de 2020): 2050032. http://dx.doi.org/10.1142/s1793604720500320.
Texto completoLiu, Dangrong R., Samuel Shinozaki, Motoyuki Miyata y Yoshiyuki Yasutomi. "Influence of Fe impurity in nitridation of Si + B4C green compact". Journal of Materials Research 13, n.º 2 (febrero de 1998): 329–42. http://dx.doi.org/10.1557/jmr.1998.0045.
Texto completoPark, Dong Soo, Myoung Won Lee, Hai Doo Kim, Young Jo Park y Yeon Gil Jung. "Fabrication and Properties of Porous RBSN". Key Engineering Materials 287 (junio de 2005): 277–81. http://dx.doi.org/10.4028/www.scientific.net/kem.287.277.
Texto completoYin, Shao Wu, Li Wang, Li Ge Tong, Fu Ming Yang y Yan Hui Li. "Kinetics Analysis of Direct Nitridation of Silicon Powders at Atmospheric Pressure". Advanced Materials Research 562-564 (agosto de 2012): 167–70. http://dx.doi.org/10.4028/www.scientific.net/amr.562-564.167.
Texto completoМилахин, Д. С., Т. В. Малин, В. Г. Мансуров, А. С. Кожухов, Н. Н. Новикова, В. А. Яковлев y К. С. Журавлев. "Определение толщины зародышевого слоя AlN, сформированного на поверхности Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-(0001) в процессе нитридизации, методами РФЭС и ИК-спектроскопии". Физика и техника полупроводников 56, n.º 8 (2022): 734. http://dx.doi.org/10.21883/ftp.2022.08.53137.23.
Texto completoYang, Wan Li, Zhong Qi Shi, Zhi Hao Jin y Guan Jun Qiao. "Effect of Oxide Additives on Catalysis and Microstructure of RBSN Using Low-Purity Silicon Powder as Raw Materials". Materials Science Forum 695 (julio de 2011): 409–12. http://dx.doi.org/10.4028/www.scientific.net/msf.695.409.
Texto completoPark, Dong Soo, Byung Dong Hahn y D. J. Baik. "Microstructure and Properties of Sintered Reaction Bonded Silicon Nitride with Aligned Whisker Seeds". Key Engineering Materials 287 (junio de 2005): 271–76. http://dx.doi.org/10.4028/www.scientific.net/kem.287.271.
Texto completoMoges, Kidist, Mitsuru Sometani, Takuji Hosoi, Takayoshi Shimura, Shinsuke Harada y Heiji Watanabe. "Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures". Materials Science Forum 963 (julio de 2019): 226–29. http://dx.doi.org/10.4028/www.scientific.net/msf.963.226.
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