Bibliografías temáticas / Ni(GeSn) / Artículos de revistas
Siga este enlace para ver otros tipos de publicaciones sobre el tema: Ni(GeSn).

Artículos de revistas sobre el tema "Ni(GeSn)"

Autor: Grafiati
Publicado: 25 de mayo de 2024

Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros

Elija tipo de fuente:

Consulte los 16 mejores artículos de revistas para su investigación sobre el tema "Ni(GeSn)".

Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.

También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.

Explore artículos de revistas sobre una amplia variedad de disciplinas y organice su bibliografía correctamente.

1

Quintero, Andrea, Patrice Gergaud, Jean-Michel Hartmann, et al. "Impact and behavior of Sn during the Ni/GeSn solid-state reaction." Journal of Applied Crystallography 53, no. 3 (2020): 605–13. http://dx.doi.org/10.1107/s1600576720003064.

Texto completo
Resumen
Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X-ray diffraction and cross-section transmission electron microscopy measurements coupled with energy-dispersive X-ray spectrometry and electron energy-loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results sho
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

Abdi, S., S. Assali, M. R. M. Atalla, S. Koelling, J. M. Warrender, and O. Moutanabbir. "Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11." Journal of Applied Physics 131, no. 10 (2022): 105304. http://dx.doi.org/10.1063/5.0077331.

Texto completo
Resumen
The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fact, maintaining a reduced thermal budget throughout all processing steps of GeSn devices is essential to avoid possible material degradation. This constraint is exacerbated by the need for higher Sn contents exceeding 8 at. % along with an enhanced strain relaxation to achieve efficient mid-infrared devices. Herein, as a low thermal budget solution for post-epitaxy processing, we elucidate the effects of laser therma
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Coudurier, Nicolas, Andrea Quintero, Virginie Loup, et al. "Plasma surface treatment of GeSn layers and its subsequent impact on Ni / GeSn solid-state reaction." Microelectronic Engineering 257 (March 2022): 111737. http://dx.doi.org/10.1016/j.mee.2022.111737.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Li, H., H. H. Cheng, L. C. Lee, C. P. Lee, L. H. Su, and Y. W. Suen. "Electrical characteristics of Ni Ohmic contact on n-type GeSn." Applied Physics Letters 104, no. 24 (2014): 241904. http://dx.doi.org/10.1063/1.4883748.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Quintero, Andrea, Patrice Gergaud, Jean-Michel Hartmann, Vincent Reboud, and Philippe Rodriguez. "Ni-based metallization of GeSn layers: A review and recent advances." Microelectronic Engineering 269 (January 2023): 111919. http://dx.doi.org/10.1016/j.mee.2022.111919.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

Jheng, Li Sian, Hui Li, Chiao Chang, Hung Hsiang Cheng, and Liang Chen Li. "Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn." AIP Advances 7, no. 9 (2017): 095324. http://dx.doi.org/10.1063/1.4997348.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Junk, Yannik, Mingshan Liu, Marvin Frauenrath, et al. "Vertical GeSn/Ge Heterostructure Gate-All-Around Nanowire p-MOSFETs." ECS Meeting Abstracts MA2022-01, no. 29 (2022): 1285. http://dx.doi.org/10.1149/ma2022-01291285mtgabs.

Texto completo
Resumen
In recent years, Ge-based group-IV alloys (GeSn, SiGeSn) have received a significant amount of attention as candidates to replace Silicon for future low power and high performance nanoelectronics [1]. The interest in these materials stems primarily from the fact that, by varying the Sn-content of the alloy, it is possible to precisely tune its bandgap from indirect to direct [2], which even opens up the possibility to switch the carrier transport from larger mass low mobility L-valley electrons to the lower mass and high mobility Γ-valley electrons. Adding Si atoms into GeSn alloys enables add
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Quintero, A., F. Mazen, P. Gergaud, et al. "Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation." Journal of Applied Physics 129, no. 11 (2021): 115302. http://dx.doi.org/10.1063/5.0038253.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Zhang, Xu, Dongliang Zhang, Jun Zheng, et al. "Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn." Solid-State Electronics 114 (December 2015): 178–81. http://dx.doi.org/10.1016/j.sse.2015.09.010.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Quintero, Andrea, Patrice Gergaud, Joris Aubin, Jean-Michel Hartmann, Vincent Reboud, and Philippe Rodriguez. "Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase." Journal of Applied Crystallography 51, no. 4 (2018): 1133–40. http://dx.doi.org/10.1107/s1600576718008786.

Texto completo
Resumen
The Ni/Ge0.9Sn0.1 solid-state reaction was monitored by combining in situ X-ray diffraction, in-plane reciprocal space map measurements and in-plane pole figures. A sequential growth was shown, in which the first phase formed was an Ni-rich phase. Then, at 518 K, the mono-stanogermanide phase Ni(Ge0.9Sn0.1) was observed. This phase was stable up to 873 K. Special attention has been given to the nature and the crystallographic orientation of the Ni-rich phase obtained at low temperature. It is demonstrated, with in-plane pole figure measurements and simulation, that it was the ∊-Ni5(Ge0.9Sn0.1)
Los estilos APA, Harvard, Vancouver, ISO, etc.
11

Liu, Y., H. Wang, J. Yan, and G. Han. "Reduction of Formation Temperature of Nickel Mono-Stanogermanide [Ni(GeSn)] by the Incorporation of Tin." ECS Solid State Letters 3, no. 2 (2013): P11—P13. http://dx.doi.org/10.1149/2.001402ssl.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
12

Quintero, Andrea, Patrice Gergaud, Jean-Michel Hartmann, et al. "Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy." ECS Transactions 98, no. 5 (2020): 365–75. http://dx.doi.org/10.1149/09805.0365ecst.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
13

Quintero Colmenares, Andrea, Patrice Gergaud, Jean-Michel Hartmann, et al. "(G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy." ECS Meeting Abstracts MA2020-02, no. 24 (2020): 1750. http://dx.doi.org/10.1149/ma2020-02241750mtgabs.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
14

Noroozi, M., M. Moeen, A. Abedin, M. S. Toprak, and H. H. Radamson. "Effect of strain on Ni-(GeSn)x contact formation to GeSn nanowires." MRS Proceedings 1707 (2014). http://dx.doi.org/10.1557/opl.2014.559.

Texto completo
Resumen
ABSTRACTIn this study, the formation of Ni-(GeSn)x on strained and relaxed Ge1−xSnx (0.01≤x≤ 0.03) nanowires in contact areas has been investigated. The epi-layers were grown at different temperatures (290 to 380°C) by RPCVD technique. The strain in GeSn layers tailored through carefully chosen of growth parameters and virtual substrate. The nanowires were fabricated through both I-line and dry-etching. 15 nm Ni was deposited either on the contact areas or whole length of nanowires. The wires went through rapid thermal annealing at intervals of 360 to 550°C for 30s in N2 ambient. The results s
Los estilos APA, Harvard, Vancouver, ISO, etc.
15

Quintero, Andrea, Pablo Acosta Alba, Jean-Michel Hartmann, et al. "Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys." IEEE Journal of the Electron Devices Society, 2023, 1. http://dx.doi.org/10.1109/jeds.2023.3332094.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
16

Gantet, Claire. "Ni pédants, ni amateurs?" Gesnerus, 2016. http://dx.doi.org/10.24894/gesn-fr.2016.73010.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
Ofrecemos descuentos en todos los planes premium para autores cuyas obras están incluidas en selecciones literarias temáticas. ¡Contáctenos para obtener un código promocional único!

Pasar a la bibliografía