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Artículos de revistas sobre el tema "Natural van der Waals heterostructures"

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Autor: Grafiati
Publicado: 6 de septiembre de 2023

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1

Ray, Kyle, Alexander E. Yore, Tong Mou, Sauraj Jha, Kirby K. H. Smithe, Bin Wang, Eric Pop y A. K. M. Newaz. "Photoresponse of Natural van der Waals Heterostructures". ACS Nano 11, n.º 6 (16 de mayo de 2017): 6024–30. http://dx.doi.org/10.1021/acsnano.7b01918.

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2

Li, Jie, Lin Du, Jing Huang, Yuan He, Jun Yi, Lili Miao, Chujun Zhao y Shuangchun Wen. "Passive photonic diodes based on natural van der Waals heterostructures". Nanophotonics 10, n.º 2 (9 de noviembre de 2020): 927–35. http://dx.doi.org/10.1515/nanoph-2020-0442.

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AbstractVan der Waals heterostructures are composed of stacked atomically thin two-dimensional (2D) crystals to provide unprecedented functionalities and novel physics. Franckeite, a naturally occurring van der Waals heterostructure consisting of superimposed SnS2-like and PbS-like layers alternately, shows intriguing potential in versatile optoelectronic applications. Here, we have prepared the few-layer franckeite via liquid-phase exfoliation method and characterized its third-order nonlinearity and ultrafast dynamics experimentally. We have found that the layered franckeite shows low saturable intensity, large modulation depth and picosecond ultrafast response. We have designed the passive photonic diodes based on the layered franckeite/C60 cascaded film and suspension configuration and found that the passive photonic diodes exhibit stable nonreciprocal transmission of light. The experimental results show the excellent nonlinear optical performance and ultrafast response of the layered franckeite, which may make inroad for the cost effective and reliable high-performance optoelectronic devices.
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3

Z. Costa, Viviane, Bryce Baker, Hon-Loen Sinn, Addison Miller, K. Watanabe, T. Taniguchi y Akm Newaz. "Observation of photoluminescence from a natural van der Waals heterostructure". Applied Physics Letters 120, n.º 25 (20 de junio de 2022): 253101. http://dx.doi.org/10.1063/5.0089439.

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van der Waals heterostructures comprised of two-dimensional (2D) materials offer a platform to obtain materials by design with unique electronic properties. Franckeite (Fr) is a naturally occurring van der Waals heterostructure comprised of two distinct alternately stacked semiconducting layers: (i) SnS2 layer and (ii) Pb3SbS4. Though both layers in the heterostructure are semiconductors, the photoluminescence from Franckeite remains elusive. Here, we report the observation of photoluminescence (PL) from Franckeite. We observed two PL peaks at ∼1.97 and ∼2.12 eV at 1.5 K. By varying the temperature from 1.5 to 280 K, we found that the PL peak position blueshifts and the integrated intensity decreases slowly as we increase the temperature. We observed linear dependence of photoluminescence integrated intensity on excitation laser power, indicating that the photoluminescence is originating from free excitons in the SnS2 layer of Fr. By comparing the PL from Fr with the PL from a monolayer MoS2, we determined that the PL quantum efficiency from Fr is an order of magnitude lower than that of a monolayer MoS2. Our study provides a fundamental understanding of the optical behavior in a complex naturally occurring van der Waals heterostructure and may pave an avenue toward developing nanoscale optical and optoelectronic devices with tailored properties.
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4

Wu, Jiazhen, Fucai Liu, Masato Sasase, Koichiro Ienaga, Yukiko Obata, Ryu Yukawa, Koji Horiba et al. "Natural van der Waals heterostructural single crystals with both magnetic and topological properties". Science Advances 5, n.º 11 (noviembre de 2019): eaax9989. http://dx.doi.org/10.1126/sciadv.aax9989.

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Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.
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5

Banik, Ananya y Kanishka Biswas. "Synthetic Nanosheets of Natural van der Waals Heterostructures". Angewandte Chemie 129, n.º 46 (6 de octubre de 2017): 14753–58. http://dx.doi.org/10.1002/ange.201708293.

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6

Banik, Ananya y Kanishka Biswas. "Synthetic Nanosheets of Natural van der Waals Heterostructures". Angewandte Chemie International Edition 56, n.º 46 (6 de octubre de 2017): 14561–66. http://dx.doi.org/10.1002/anie.201708293.

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7

Li, Jie, Ke Yang, Lin Du, Jun Yi, Jing Huang, Jinrui Zhang, Yuan He et al. "Nonlinear Optical Response in Natural van der Waals Heterostructures". Advanced Optical Materials 8, n.º 15 (7 de mayo de 2020): 2000382. http://dx.doi.org/10.1002/adom.202000382.

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8

Bai, Wei, Pengju Li, Sailong Ju, Chong Xiao, Haohao Shi, Sheng Wang, Shengyong Qin, Zhe Sun y Yi Xie. "Monolayer Behavior of NbS2 in Natural van der Waals Heterostructures". Journal of Physical Chemistry Letters 9, n.º 22 (23 de octubre de 2018): 6421–25. http://dx.doi.org/10.1021/acs.jpclett.8b02781.

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9

Gant, Patricia, Foad Ghasemi, David Maeso, Carmen Munuera, Elena López-Elvira, Riccardo Frisenda, David Pérez De Lara, Gabino Rubio-Bollinger, Mar Garcia-Hernandez y Andres Castellanos-Gomez. "Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite". Beilstein Journal of Nanotechnology 8 (8 de noviembre de 2017): 2357–62. http://dx.doi.org/10.3762/bjnano.8.235.

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We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission-mode and epi-illumination-mode optical microscopy images provides a rapid method to estimate the thickness of the exfoliated flakes at first glance. A quantitative analysis of the optical contrast spectra by means of micro-reflectance allows one to determine the refractive index of franckeite over a broad range of the visible spectrum through a fit of the acquired spectra to a model based on the Fresnel law.
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10

Varadwaj, Pradeep R., Arpita Varadwaj, Helder M. Marques y Koichi Yamashita. "Chalcogen Bonding in the Molecular Dimers of WCh2 (Ch = S, Se, Te): On the Basic Understanding of the Local Interfacial and Interlayer Bonding Environment in 2D Layered Tungsten Dichalcogenides". International Journal of Molecular Sciences 23, n.º 3 (23 de enero de 2022): 1263. http://dx.doi.org/10.3390/ijms23031263.

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Layered two-dimensional transition metal dichalcogenides and their heterostructures are of current interest, owing to the diversity of their applications in many areas of materials nanoscience and technologies. With this in mind, we have examined the three molecular dimers of the tungsten dichalcogenide series, (WCh2)2 (Ch = S, Se, Te), using density functional theory to provide insight into which interactions, and their specific characteristics, are responsible for the interfacial/interlayer region in the room temperature 2H phase of WCh2 crystals. Our calculations at various levels of theory suggested that the Te···Te chalcogen bonding in (WTe2)2 is weak, whereas the Se···Se and S···S bonding interactions in (WSe2)2 and (WS2)2, respectively, are of the van der Waals type. The presence and character of Ch···Ch chalcogen bonding interactions in the dimers of (WCh2)2 are examined with a number of theoretical approaches and discussed, including charge-density-based approaches, such as the quantum theory of atoms in molecules, interaction region indicator, independent gradient model, and reduced density gradient non-covalent index approaches. The charge-density-based topological features are shown to be concordant with the results that originate from the extrema of potential on the electrostatic surfaces of WCh2 monomers. A natural bond orbital analysis has enabled us to suggest a number of weak hyperconjugative charge transfer interactions between the interacting monomers that are responsible for the geometry of the (WCh2)2 dimers at equilibrium. In addition to other features, we demonstrate that there is no so-called van der Waals gap between the monolayers in two-dimensional layered transition metal tungsten dichalcogenides, which are gapless, and that the (WCh2)2 dimers may be prototypes for a basic understanding of the physical chemistry of the chemical bonding environments associated with the local interfacial/interlayer regions in layered 2H-WCh2 nanoscale systems.
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11

Zschiesche, Hannes, Melis Aygar, Brian Langelier, Thomas Szkopek y Gianluigi Botton. "Atomic Scale Structure and Chemistry Study of Franckeite - A Natural van-der-Waals Heterostructure - Using Scanning Transmission Electron Microscopy and Atom Probe Tomography". Microscopy and Microanalysis 26, S2 (30 de julio de 2020): 1642–43. http://dx.doi.org/10.1017/s1431927620018814.

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12

Geim, A. K. y I. V. Grigorieva. "Van der Waals heterostructures". Nature 499, n.º 7459 (julio de 2013): 419–25. http://dx.doi.org/10.1038/nature12385.

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13

Wu, Yan-Fei, Meng-Yuan Zhu, Rui-Jie Zhao, Xin-Jie Liu, Yun-Chi Zhao, Hong-Xiang Wei, Jing-Yan Zhang et al. "The fabrication and physical properties of two-dimensional van der Waals heterostructures". Acta Physica Sinica 71, n.º 4 (2022): 048502. http://dx.doi.org/10.7498/aps.71.20212033.

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Two-dimensional van der Waals materials (2D materials for short) have developed into a novel material family that has attracted much attention, and thus the integration, performance and application of 2D van der Waals heterostructures has been one of the research hotspots in the field of condensed matter physics and materials science. The 2D van der Waals heterostructures provide a flexible and extensive platform for exploring diverse physical effects and novel physical phenomena, as well as for constructing novel spintronic devices. In this topical review article, starting with the transfer technology of 2D materials, we will introduce the construction, performance and application of 2D van der Waals heterostructures. Firstly, the preparation technology of 2D van der Waals heterostructures in detail will be presented according to the two classifications of wet transfer and dry transfer, including general equipment for transfer technology, the detailed steps of widely used transfer methods, a three-dimensional manipulating method for 2D materials, and hetero-interface cleaning methods. Then, we will introduce the performance and application of 2D van der Waals heterostructures, with a focus on 2D magnetic van der Waals heterostructures and their applications in the field of 2D van der Waals magnetic tunnel junctions and moiré superlattices. The development and optimization of 2D materials transfer technology will boost 2D van der Waals heterostructures to achieve breakthrough results in fundamental science research and practical application.
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14

Xiang, Rong, Taiki Inoue, Yongjia Zheng, Akihito Kumamoto, Yang Qian, Yuta Sato, Ming Liu et al. "One-dimensional van der Waals heterostructures". Science 367, n.º 6477 (30 de enero de 2020): 537–42. http://dx.doi.org/10.1126/science.aaz2570.

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We present the experimental synthesis of one-dimensional (1D) van der Waals heterostructures, a class of materials where different atomic layers are coaxially stacked. We demonstrate the growth of single-crystal layers of hexagonal boron nitride (BN) and molybdenum disulfide (MoS2) crystals on single-walled carbon nanotubes (SWCNTs). For the latter, larger-diameter nanotubes that overcome strain effect were more readily synthesized. We also report a 5-nanometer–diameter heterostructure consisting of an inner SWCNT, a middle three-layer BN nanotube, and an outer MoS2 nanotube. Electron diffraction verifies that all shells in the heterostructures are single crystals. This work suggests that all of the materials in the current 2D library could be rolled into their 1D counterparts and a plethora of function-designable 1D heterostructures could be realized.
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15

Jariwala, Deep, Tobin J. Marks y Mark C. Hersam. "Mixed-dimensional van der Waals heterostructures". Nature Materials 16, n.º 2 (1 de agosto de 2016): 170–81. http://dx.doi.org/10.1038/nmat4703.

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16

Furchi, Marco M., Armin A. Zechmeister, Florian Hoeller, Stefan Wachter, Andreas Pospischil y Thomas Mueller. "Photovoltaics in Van der Waals Heterostructures". IEEE Journal of Selected Topics in Quantum Electronics 23, n.º 1 (enero de 2017): 106–16. http://dx.doi.org/10.1109/jstqe.2016.2582318.

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17

Tang, Hongyu y Giulia Tagliabue. "Tunable photoconductive devices based on graphene/WSe2 heterostructures". EPJ Web of Conferences 266 (2022): 09010. http://dx.doi.org/10.1051/epjconf/202226609010.

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Optoelectronic tunability in van der Waals heterostructures is essential for their optoelectronic applications. In this work, tunable photoconductive properties were investigated in the heterostructures of WSe2 and monolayer graphene with different stacking orders on SiO2/Si substrates. Here, we demonstrated the effect of the material thickness of WSe2 and graphene on the interfacial charge transport, light absorption, and photoresponses. The results showed that the WSe2/graphene heterostructure exhibited positive photoconductivity after photoexcitation, while negative photoconductivity was observed in the graphene/WSe2 heterostructures. The tunable photoconductive behaviors provide promising potential applications of van der Waals heterostructures in optoelectronics. This work has guiding significance for the realization of stacking engineering in van der Waals heterostructures.
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18

Rakib, Tawfiqur, Pascal Pochet, Elif Ertekin y Harley T. Johnson. "Moiré engineering in van der Waals heterostructures". Journal of Applied Physics 132, n.º 12 (28 de septiembre de 2022): 120901. http://dx.doi.org/10.1063/5.0105405.

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Isolated atomic planes can be assembled into a multilayer van der Waals (vdW) heterostructure in a precisely chosen sequence. These heterostructures feature moiré patterns if the constituent 2D material layers are stacked in an incommensurable way, due to a lattice mismatch or twist. This design-by-stacking has opened up the promising area of moiré engineering, a term that can be understood in two different perspectives, namely, (i) structural—engineering a moiré pattern by introducing twist, relative strain, or defects that affect the commensurability of the layers and (ii) functional—exploiting a moiré pattern to find and tune resulting physical properties of a vdW heterostructure. The latter meaning, referring to the application of a moiré pattern, is seen in the literature in the specific context of the observation of correlated electronic states and unconventional superconductivity in twisted bilayer graphene. The former meaning, referring to the design of the moiré pattern itself, is present in the literature but less commonly discussed or less understood. The underlying link between these two perspectives lies in the deformation field of the moiré superlattice. In this Perspective, we describe a path from designing a moiré pattern to employing the moiré pattern to tune physical properties of a vdW heterostructure. We also discuss the concept of moiré engineering in the context of twistronics, strain engineering, and defect engineering in vdW heterostructures. Although twistronics is always associated with moiré superlattices, strain and defect engineering are often not. Here, we demonstrate how strain and defect engineering can be understood within the context of moiré engineering. Adopting this perspective, we note that moiré engineering creates a compelling opportunity to design and develop multiscale electronic devices.
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19

Sutter, Peter y Eli Sutter. "Unconventional van der Waals heterostructures beyond stacking". iScience 24, n.º 9 (septiembre de 2021): 103050. http://dx.doi.org/10.1016/j.isci.2021.103050.

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20

Shukla, Ayushi y Pooja Srivastava. "Van der Waals Heterostructures for device Applications". SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology 13, n.º 01 (30 de junio de 2021): 48–52. http://dx.doi.org/10.18090/samriddhi.v13i01.9.

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Advent of two-dimensional (2D) materials owing to their extraordinary properties can revolutionize the field of nano-electronics. Experimental advancements have now made it possible to stack different 2D layers on top of each other to form a single system. Due to van der Waals bonding between the layers, the properties of each layer are not perturbed much. It helps in generating new functionalities for nano-electronics applications. The present paper focuses on the application of van der Waals heterostructure.
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21

Massicotte, M., P. Schmidt, F. Vialla, K. G. Schädler, A. Reserbat-Plantey, K. Watanabe, T. Taniguchi, K. J. Tielrooij y F. H. L. Koppens. "Picosecond photoresponse in van der Waals heterostructures". Nature Nanotechnology 11, n.º 1 (5 de octubre de 2015): 42–46. http://dx.doi.org/10.1038/nnano.2015.227.

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22

Huang, Mingqiang, Shengman Li, Zhenfeng Zhang, Xiong Xiong, Xuefei Li y Yanqing Wu. "Multifunctional high-performance van der Waals heterostructures". Nature Nanotechnology 12, n.º 12 (9 de octubre de 2017): 1148–54. http://dx.doi.org/10.1038/nnano.2017.208.

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23

Jin, Chenhao, Eric Yue Ma, Ouri Karni, Emma C. Regan, Feng Wang y Tony F. Heinz. "Ultrafast dynamics in van der Waals heterostructures". Nature Nanotechnology 13, n.º 11 (noviembre de 2018): 994–1003. http://dx.doi.org/10.1038/s41565-018-0298-5.

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24

Svatek, S. A., G. W. Mudd, Z. R. Kudrynskyi, O. Makarovsky, Z. D. Kovalyuk, C. J. Mellor, L. Eaves, P. H. Beton y A. Patanè. "Graphene-InSe-graphene van der Waals heterostructures". Journal of Physics: Conference Series 647 (13 de octubre de 2015): 012001. http://dx.doi.org/10.1088/1742-6596/647/1/012001.

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25

Gandi, Appala Naidu, Husam N. Alshareef y Udo Schwingenschlögl. "Thermal response in van der Waals heterostructures". Journal of Physics: Condensed Matter 29, n.º 3 (21 de noviembre de 2016): 035504. http://dx.doi.org/10.1088/1361-648x/29/3/035504.

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26

Novoselov, K. S., A. Mishchenko, A. Carvalho y A. H. Castro Neto. "2D materials and van der Waals heterostructures". Science 353, n.º 6298 (28 de julio de 2016): aac9439. http://dx.doi.org/10.1126/science.aac9439.

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27

Andersen, Kirsten, Simone Latini y Kristian S. Thygesen. "Dielectric Genome of van der Waals Heterostructures". Nano Letters 15, n.º 7 (12 de junio de 2015): 4616–21. http://dx.doi.org/10.1021/acs.nanolett.5b01251.

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28

Vermeulen, Paul A., Jefta Mulder, Jamo Momand y Bart J. Kooi. "Strain engineering of van der Waals heterostructures". Nanoscale 10, n.º 3 (2018): 1474–80. http://dx.doi.org/10.1039/c7nr07607j.

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29

Liu, Lixin y Tianyou Zhai. "Wafer‐scale vertical van der Waals heterostructures". InfoMat 3, n.º 1 (diciembre de 2020): 3–21. http://dx.doi.org/10.1002/inf2.12164.

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30

Su, Bao‐Wang, Xi‐Lin Zhang, Bin‐Wei Yao, Hao‐Wei Guo, De‐Kang Li, Xu‐Dong Chen, Zhi‐Bo Liu y Jian‐Guo Tian. "Laser Writable Multifunctional van der Waals Heterostructures". Small 16, n.º 50 (23 de noviembre de 2020): 2003593. http://dx.doi.org/10.1002/smll.202003593.

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31

Slepchenkov, Michael M., Dmitry A. Kolosov y Olga E. Glukhova. "Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study". Materials 15, n.º 12 (8 de junio de 2022): 4084. http://dx.doi.org/10.3390/ma15124084.

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At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing buckled triangular borophene (tr-B) and graphene-like gallium nitride (GaN) monolayers, and tr-B and zinc oxide (ZnO) monolayers together. Using ab initio methods, we theoretically predict the structural, electronic, and electrically conductive properties of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. It is shown that the proposed atomic configurations of tr-B/GaN and tr-B/ZnO heterostructures are energetically stable and are characterized by a gapless band structure in contrast to the semiconductor character of GaN and ZnO monolayers. We find the phenomenon of charge transfer from tr-B to GaN and ZnO monolayers, which predetermines the key role of borophene in the formation of the features of the electronic structure of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. The results of the calculation of the current–voltage (I–V) curves reveal that tr-B/GaN and tr-B/ZnO van der Waals heterostructures are characterized by the phenomenon of current anisotropy: the current along the zigzag edge of the ZnO/GaN monolayers is five times greater than along the armchair edge of these monolayers. Moreover, the heterostructures show good stability of current to temperature change at small voltage. These findings demonstrate that r-B/GaN and tr-B/ZnO vdW heterostructures are promising candidates for creating the element base of nanoelectronic devices, in particular, a conducting channel in field-effect transistors.
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32

Liu, Zixiang y Zhiguo Wang. "Electronic Properties of MTe2/AsI3(M=Mo and W) Van der Waals Heterostructures". MATEC Web of Conferences 380 (2023): 01011. http://dx.doi.org/10.1051/matecconf/202338001011.

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Two dimensional (2D) materials with unique physical or chemical prperties has triggered worldwide interest in the fields of material science, condensed matter physics, and devices physics. Vertically stacking different 2D materials enables the creation of a large variety of van der Waals heterostructures. The van der Waals heterostructures robust the merits of the 2D materials electronic prperties. Using density functional theory calculations, the electronic structure of MTe2/AsI3(M=Mo and W) Van der Waals heterostructures are investigated in this work. The results show by stacking MTe2(M=Mo and W) and AsI3 vertically, a strongly binding vdW heterostructure with a type-II band alignment can be formed, which gives expectation of high multifunctional electronic performance. This theoretical study provides vital insights of 2D materials and their heterostructures which could be potential candidates for future nanoelectronic applications.
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33

Yao, Jiandong y Guowei Yang. "Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection". Journal of Applied Physics 131, n.º 16 (28 de abril de 2022): 161101. http://dx.doi.org/10.1063/5.0087503.

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Construction of heterostructures has provided a tremendous degree of freedom to integrate, exert, and extend the features of various semiconductors, thereby opening up distinctive opportunities for the upcoming modern optoelectronics. The abundant physical properties and dangling-bond-free interface have enabled 2D layered materials serving as magical “Lego blocks” for building van der Waals heterostructures, which bring about superior contact quality (atomically sharp and distortionless) and the combination of functional units with various merits. Therefore, these heterostructures have been the focus of intensive research in the past decade. This Tutorial begins with a variety of strategies for fabricating van der Waals heterojunctions, categorized into the transfer-stacking method and in situ growth assembly method. Then, the techniques commonly exploited for characterizing the structure, morphology, band alignment, interlayer coupling, and dynamics of photocarriers of van der Waals heterojunctions are summarized, including Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, conductive atomic force microscopy, Kelvin probe force microscope, ultraviolet photoelectron spectroscopy, transfer characteristic analysis, scanning photocurrent microscopy, etc. Following that, the application of various van der Waals heterojunctions for diverse photoelectric detection is comprehensively overviewed. On the whole, this Tutorial has epitomized the fabrication, characterization, and photodetection application of van der Waals heterostructures, which aims to provide instructive guidance for the abecedarians in this emerging field and offer impetus of advancing this rapidly evolving domain.
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34

Yao, Jiandong y Guowei Yang. "Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection". Journal of Applied Physics 131, n.º 16 (28 de abril de 2022): 161101. http://dx.doi.org/10.1063/5.0087503.

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Construction of heterostructures has provided a tremendous degree of freedom to integrate, exert, and extend the features of various semiconductors, thereby opening up distinctive opportunities for the upcoming modern optoelectronics. The abundant physical properties and dangling-bond-free interface have enabled 2D layered materials serving as magical “Lego blocks” for building van der Waals heterostructures, which bring about superior contact quality (atomically sharp and distortionless) and the combination of functional units with various merits. Therefore, these heterostructures have been the focus of intensive research in the past decade. This Tutorial begins with a variety of strategies for fabricating van der Waals heterojunctions, categorized into the transfer-stacking method and in situ growth assembly method. Then, the techniques commonly exploited for characterizing the structure, morphology, band alignment, interlayer coupling, and dynamics of photocarriers of van der Waals heterojunctions are summarized, including Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy, conductive atomic force microscopy, Kelvin probe force microscope, ultraviolet photoelectron spectroscopy, transfer characteristic analysis, scanning photocurrent microscopy, etc. Following that, the application of various van der Waals heterojunctions for diverse photoelectric detection is comprehensively overviewed. On the whole, this Tutorial has epitomized the fabrication, characterization, and photodetection application of van der Waals heterostructures, which aims to provide instructive guidance for the abecedarians in this emerging field and offer impetus of advancing this rapidly evolving domain.
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35

Goswami, P. y U. P. Tyagi. "Graphene-TMD Van der Waals Heterostucture Plasmonics". Journal of Scientific Research 12, n.º 2 (1 de febrero de 2020): 169–74. http://dx.doi.org/10.3329/jsr.v12i2.43685.

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The collective excitations of electrons in the bulk or at the surface, viz. plasmons, play an important role in the properties of materials, and have generated the field of “plasmonics”. We report the observation of a highly unusual plasmon mode on the surface of Van der Waals heterostructures (vdWHs) of graphene monolayer on 2D transition metal dichalcogenide (Gr-TMD) substrate. Since the exponentially decaying fields of surface plasmon wave propagating along interface is highly sensitive to the ambient refractive index variations, such heterostructures are useful for ultra-sensitive bio-sensing.
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36

Wang, Han Yu y An Ping Huang. "Progress in Graphene-Based Two-Dimensional Heterostructures and their Photoelectric Properties". Applied Mechanics and Materials 733 (febrero de 2015): 231–35. http://dx.doi.org/10.4028/www.scientific.net/amm.733.231.

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The zero-gap and low absorption in visible light spectrum has limited the potential of graphene potential in photoelectric applications. Two-dimensional (2D) heterostructures have grown up in recent years showing attractive prospects in making new materials with designed properties, and become a promising way to modulate properties of graphene. Recent research progress in 2D heterostructures, including the varieties and properties of van der waals and non-van der waals graphene-based 2D heterostructures separately, is reviewed in this paper. Then the photoelectric applications of graphene-based 2D heterostructures are summarized.
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37

Haley, Kristine L., Jeffrey A. Cloninger, Kayla Cerminara, Randy M. Sterbentz, Takashi Taniguchi, Kenji Watanabe y Joshua O. Island. "Heated Assembly and Transfer of Van der Waals Heterostructures with Common Nail Polish". Nanomanufacturing 1, n.º 1 (15 de junio de 2021): 49–56. http://dx.doi.org/10.3390/nanomanufacturing1010005.

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Recent advances in the manipulation and control of layered, two-dimensional materials has given way to the construction of heterostructures with new functionality and unprecedented electronic properties. In this study, we present a simple technique to assemble and transfer van der Waals heterostructures using common nail polish. Commercially available nail polish acts as a resilient sticky polymer, allowing for the fabrication of complex multi-material stacks without noticeable fatigue. Directly comparing four commercially available brands of nail polish, we find that one stands out in terms of stability and stacking characteristics. Using this method, we fabricate two top-gated devices and report their electrical properties. Our technique reduces the complexity in assembling van der Waals heterostructures based on the proven van der Waals pick up method.
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38

Peimyoo, N., M. D. Barnes, J. D. Mehew, A. De Sanctis, I. Amit, J. Escolar, K. Anastasiou et al. "Laser-writable high-k dielectric for van der Waals nanoelectronics". Science Advances 5, n.º 1 (enero de 2019): eaau0906. http://dx.doi.org/10.1126/sciadv.aau0906.

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Similar to silicon-based semiconductor devices, van der Waals heterostructures require integration with high-koxides. Here, we demonstrate a method to embed and pattern a multifunctional few-nanometer-thick high-koxide within various van der Waals devices without degrading the properties of the neighboring two-dimensional materials. This transformation allows for the creation of several fundamental nanoelectronic and optoelectronic devices, including flexible Schottky barrier field-effect transistors, dual-gated graphene transistors, and vertical light-emitting/detecting tunneling transistors. Furthermore, upon dielectric breakdown, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching memories. This nondestructive embedding of a high-koxide within complex van der Waals heterostructures could play an important role in future flexible multifunctional van der Waals devices.
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39

Paul, Kamal Kumar, Ji-Hee Kim y Young Hee Lee. "Hot carrier photovoltaics in van der Waals heterostructures". Nature Reviews Physics 3, n.º 3 (29 de enero de 2021): 178–92. http://dx.doi.org/10.1038/s42254-020-00272-4.

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40

Kobayashi, Yu, Takashi Taniguchi, Kenji Watanabe, Yutaka Maniwa y Yasumitsu Miyata. "Slidable atomic layers in van der Waals heterostructures". Applied Physics Express 10, n.º 4 (23 de marzo de 2017): 045201. http://dx.doi.org/10.7567/apex.10.045201.

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41

Guo, Hongli, Xu Zhang y Gang Lu. "Moiré excitons in defective van der Waals heterostructures". Proceedings of the National Academy of Sciences 118, n.º 32 (2 de agosto de 2021): e2105468118. http://dx.doi.org/10.1073/pnas.2105468118.

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Excitons can be trapped by moiré potentials in van der Waals (vdW) heterostructures, forming ordered arrays of quantum dots. Excitons can also be trapped by defect potentials as single photon emitters. While the moiré and defect potentials in vdW heterostructures have been studied separately, their interplay remains largely unexplored. Here, we perform first-principles calculations to elucidate the interplay of the two potentials in determining the optoelectronic properties of twisted MoS2/WS2 heterobilayers. The binding energy, charge density, localization, and hybridization of the moiré excitons can be modulated by the competition and cooperation of the two potentials. Their interplay can also be tuned by vertical electric fields, which can either de-trap the excitons or strongly localize them. One can further tailor the interplay of the two potentials via defect engineering to create one-dimensional exciton lattices with tunable orientations. Our work establishes defect engineering as a promising strategy to realize on-demand optoelectronic responses.
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42

Klokov, Andrey Yu, Nikolay Yu Frolov, Andrey I. Sharkov, Sergey N. Nikolaev, Maxim A. Chernopitssky, Semen I. Chentsov, Mikhail V. Pugachev et al. "3D Hypersound Microscopy of van der Waals Heterostructures". Nano Letters 22, n.º 5 (28 de febrero de 2022): 2070–76. http://dx.doi.org/10.1021/acs.nanolett.2c00003.

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43

Guo, Jia, Rong Xiang, Ting Cheng, Shigeo Maruyama y Yan Li. "One-Dimensional van der Waals Heterostructures: A Perspective". ACS Nanoscience Au 2, n.º 1 (8 de noviembre de 2021): 3–11. http://dx.doi.org/10.1021/acsnanoscienceau.1c00023.

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44

Polfus, Jonathan M., Marta Benthem Muñiz, Ayaz Ali, Daniel A. Barragan‐Yani, Per Erik Vullum, Martin F. Sunding, Takashi Taniguchi, Kenji Watanabe y Branson D. Belle. "Temperature‐Dependent Adhesion in van der Waals Heterostructures". Advanced Materials Interfaces 8, n.º 20 (27 de septiembre de 2021): 2100838. http://dx.doi.org/10.1002/admi.202100838.

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45

Song, Justin C. W. y Nathaniel M. Gabor. "Electron quantum metamaterials in van der Waals heterostructures". Nature Nanotechnology 13, n.º 11 (noviembre de 2018): 986–93. http://dx.doi.org/10.1038/s41565-018-0294-9.

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46

Li, Chao, Peng Zhou y David Wei Zhang. "Devices and applications of van der Waals heterostructures". Journal of Semiconductors 38, n.º 3 (marzo de 2017): 031005. http://dx.doi.org/10.1088/1674-4926/38/3/031005.

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47

Kim, Youngwook, Patrick Herlinger, Takashi Taniguchi, Kenji Watanabe y Jurgen H. Smet. "Reliable Postprocessing Improvement of van der Waals Heterostructures". ACS Nano 13, n.º 12 (27 de noviembre de 2019): 14182–90. http://dx.doi.org/10.1021/acsnano.9b06992.

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48

Yang, Xun, Chong-Xin Shan, Pei-Nan Ni, Ming-Ming Jiang, An-Qi Chen, Hai Zhu, Jin-Hao Zang, Ying-Jie Lu y De-Zhen Shen. "Electrically driven lasers from van der Waals heterostructures". Nanoscale 10, n.º 20 (2018): 9602–7. http://dx.doi.org/10.1039/c8nr01037d.

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49

Huang, Yulong, Christian Wolowiec, Taishan Zhu, Yong Hu, Lu An, Zheng Li, Jeffrey C. Grossman, Ivan K. Schuller y Shenqiang Ren. "Emerging Magnetic Interactions in van der Waals Heterostructures". Nano Letters 20, n.º 11 (15 de octubre de 2020): 7852–59. http://dx.doi.org/10.1021/acs.nanolett.0c02175.

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50

Liu, Chunsen y Peng Zhou. "Memory Devices Based on Van der Waals Heterostructures". ACS Materials Letters 2, n.º 9 (23 de julio de 2020): 1101–5. http://dx.doi.org/10.1021/acsmaterialslett.0c00227.

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