Tesis sobre el tema "Nanowires"
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Pfüller, Carsten. "Optical properties of single semiconductor nanowires and nanowire ensembles". Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2011. http://dx.doi.org/10.18452/16360.
Texto completoThis thesis presents a detailed investigation of the optical properties of semiconductor nanowires (NWs) in general and single GaN NWs and GaN NW ensembles in particular by photoluminescence (PL) spectroscopy. NWs are often considered as potential building blocks for future nanometer-scaled devices. This vision is based on several attractive features that are generally ascribed to NWs. In the first part of the thesis, some of these features are examined using semiconductor NWs of different materials. On the basis of the temperature-dependent PL of Au- and self-assisted GaAs/(Al,Ga)As core-shell NWs, the influence of foreign catalyst particles on the optical properties of NWs is investigated. The effect of the substrate choice is studied by comparing the PL of ZnO NWs grown on Si, Sapphire, and ZnO substrates. The major part of this thesis discusses the optical properties of GaN NWs. The investigation of the PL of single GaN NWs and GaN NW ensembles reveals the significance of their large surface-to-volume ratio and that each NW exhibits its own individual recombination behavior. An unexpected broadening of the donor-bound exciton transition is explained by the abundant presence of surface donors in NWs. The existence and statistical relevance of these surface donors is confirmed by PL experiments of single GaN NWs which are either dispersed or free-standing. Furthermore, the influence of electric fields on the optical properties of GaN NWs is investigated and the coupling of light with GaN NWs is studied by reflectance and Raman measurements. The central results of this thesis motivate the introduction of a model that explains the typically observed nonexponential recombination dynamics in NW ensembles. It is based on a distribution of recombination rates. Preliminary simulations using this model describe the nonexponential decay of GaN NW ensembles satisfactorily and allow for an estimation of their internal quantum efficiency.
Machin, Sophie Elizabeth. "Metal oxide nanowires". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648214.
Texto completoRudolph, Andreas [Verfasser] y Werner [Akademischer Betreuer] Wegscheider. "MBE growth of GaAs nanowires and nanowire heterostructures / Andreas Rudolph. Betreuer: Werner Wegscheider". Regensburg : Universitätsbibliothek Regensburg, 2012. http://d-nb.info/1025386205/34.
Texto completoWoodruff, Jacob Huffman. "Deterministic germanium nanowire growth : controlling the position, diameter, and orientaion of germanium nanowires /". May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.
Texto completoMrzel, A., A. Kovic, A. Jesih y M. Vilfan. "Decoration of MoSI Nanowires with Platinum Nanoparticles and Transformation into Molybdenum-nanowire Nased Networks". Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35168.
Texto completoEvans, G. J. "Transport in silicon nanowires". Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598915.
Texto completoSiddiqui, Saima Afroz. "Magnetostatic interaction in nanowires". Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/93838.
Texto completoCataloged from PDF version of thesis.
Includes bibliographical references (pages 61-65).
Nonvolatile memory and logic devices rely on the manipulation of domain walls in magnetic nanowires, and scaling of these devices requires an understanding of domain wall behavior as a function of the wire width. Due to the increased importance of edge roughness and microstructure in narrow lines, domain wall pinning increases dramatically as the wire dimensions decrease and stochastic behavior is expected depending on the distribution of pinning sites. This work reports on the field driven domain wall statistics in sub-100 nm wide nanowires made from Co films of 8 nm thickness made by an electron beam lithography and etching process that minimizes edge roughness.
by Saima Afroz Siddiqui.
S.M.
Kulmala, Tero Samuli. "Nanowires and graphene nanoelectronics". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608195.
Texto completoFasoli, Andrea. "Nanowires and nanoribbons nanoelectronics". Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608660.
Texto completoLin, Yu-Ming 1974. "Thermoelectric properties of Bi₁âx̳Sbx̳ nanowires and lead salt superlattice nanowires". Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/17593.
Texto completoIn title on t.p., double-underscored "x" appears as subscript.
Includes bibliographical references (p. 138-147).
This thesis involves an extensive experimental and theoretical study of the thermoelectric-related transport properties of BilxSbx nanowires, and presents a theoretical framework for predicting the electrical properties of superlattice nanowires. A template-assisted fabrication scheme is employed to synthesize Bi-based nanowires by pressure injecting liquid metal alloys into the hexagonally packed cylindrical pores of anodic alumina. These nanowires possess a very high crystalline quality with a diameter-dependent crystallographic orientation along the wire axis. A theoretical model for Bil-Sbx nanowires is developed, taking into consideration the effects of cylindrical wire boundary, multiple and anisotropic carrier pockets, and non-parabolic dispersion relations. A unique semimetal-semiconductor (SM-SC) transition is predicted for these nanowires as the wire diameter decreases or as the Sb concentration increases. Also, an unusual physical phenomenon involving a very high hole density of states due to the coalescence of 10 hole carrier pockets, which is especially advantageous for improving the thermoelectric performance of p-type materials, is uncovered for BilxSbx nanowires. Various transport measurements are reported for Bi-related nanowire arrays as a function of temperature, wire diameter, Sb content, and magnetic field. R(T) measurements show distinct T dependences for semimetallic and semiconducting nanowires, as predicted by the theory, and the condition for the SM-SC transition can be clearly identified. Enhanced thermopower is observed for BilxSbx nanowires as the diameter decreases or as the Sb content increases, indicating that both quantum confinement effects and Sb alloying effects are important for improving the thermo-electric performance.
(cont.) The theoretical model is further extended to study transport properties of Te-doped Bi nanowires and Sb nanowires, and good agreement between theoretical predictions and experimental results is obtained. A model for superlattice nanowires is presented to evaluate their potential for thermoelectric applications. Thermoelectric properties of superlattice nanowires made of various lead salts (PbS, PbSe, and PbTe) are investigated as a function of segment length, wire diameter, crystal orientation along the wire axis, and length ratio of the constituent nanodots. An interesting inversion of the potential barrier and well induced by quantum confinement is predicted in superlattice nanowires as the wire diameter decreases. ZT values higher than 4 and 6 are predicted for 5 nm-diameter PbSe/PbS and PbTe/PbSe superlattice nanowires, respectively, at 77K, and these ZT values are significantly larger than those of their corresponding alloy nanowires. For a given superlattice period, the ZT value can be further improved by adopting different segment lengths for the two constituent materials. The model developed here not only can determine the optimal superlattice nanowire parameters (segment length, diameter, materials, and doping level) for thermoelectric applications, but also can be extended to other superlattice systems, such as 3D quantum dot arrays ...
by Yu-Ming Lin.
Ph.D.
Lee, Huyong. "Titanium Oxide Nanowire Growth by Oxidation Under a Limited Supply of Oxygen: Processing and Characterization". Columbus, Ohio : Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1236191211.
Texto completoAlber, Ina [Verfasser] y Reinhard [Akademischer Betreuer] Neumann. "Synthesis and Plasmonic Properties of Metallic Nanowires and Nanowire Dimers / Ina Alber ; Betreuer: Reinhard Neumann". Heidelberg : Universitätsbibliothek Heidelberg, 2012. http://d-nb.info/1177039982/34.
Texto completoYang, Li. "First-principles Calculations on the Electronic, Vibrational, and Optical Properties of Semiconductor Nanowires". Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/14133.
Texto completoAu, Frederick Chi Kan. "Electronic properties of silicon nanowires /". access full-text access abstract and table of contents, 2005. http://libweb.cityu.edu.hk/cgi-bin/ezdb/thesis.pl?phd-ap-b19887759a.pdf.
Texto completo"Submitted to Department of Physics and Materials Science in partial fulfillment of the requirements for the degree of Doctor of Philosophy" Includes bibliographical references.
Pfund, Andreas. "Spin states in InAs nanowires /". Zürich : ETH, 2008. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17861.
Texto completoElfström, Niklas. "Silicon Nanowires for Biomolecule Detection". Doctoral thesis, KTH, Materialfysik, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4695.
Texto completoQC 20100719
Ghita, Marius Mugurel. "Frequency Multiplication in Silicon Nanowires". PDXScholar, 2016. http://pdxscholar.library.pdx.edu/open_access_etds/3082.
Texto completoZörgiebel, Felix. "Silicon Nanowires for Biosensor Applications". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-230675.
Texto completoNanostructures have attracted great attention not only in scientific research, but also in engineering applications during the last decades. Especially in combination with biological systems, whose complex function is controlled from nanoscale building blocks, nanotechnological developments find a huge field of applications in the medical sector. This work is dedicated to the functional understanding and technical implementation of silicon nanowires for future medical sensor applications. In contrast to doped silicon nanowire based sensors, this work is focussed on pure, undoped silicon nanowires, which have lower demands on production techniques and use Schottky-barriers as electric field detectors. The pH and biosensing capabilities of such undoped silicon nanowire field effect transistors were investigated theoretically and experimentally and further integrated in a lab-on-a-chip device as well as a small-scale multiplexer measurement device. In a second separate part, the optical sensing properties of undoped silicon nanowires were theoretically modeled. The main contents of both parts are shortly described in the following paragraphs. A multiscale model of silicon nanowire FETs to describe the charge transport in liquid surrounding in a quantum mechanical framework was developed to investigate the sensing properties of the nanowire sensors in general. The model set the basis for the understanding of the subsequent experimental investigations of noise characterization, pH sensitivity and biosensing properties. With the help of a novel gate sweeping measurement method the optimal working point of the sensors was determined and the high sensor quality could be quantified in terms of an empirical mathematical model. The sensor was then used for measurements of medically relevant concentrations of the Thrombin protein, providing a proof-of-concept for medical applications for our newly developed sensor. In order to exploit the small size of our sensors for technical applications we integrated the devices in lab-on-a-chip system with a microfluidic droplet generation module. There they were used to measure the pH and ionic concentration of droplets. Finally a portable multiplex measurement device for silicon nanowire sensors as well as other ion sensitive FETs was developed in cooperation with the IAVT at TU Dresden (Institut für Aufbau- und Verbindungstechnik). The second part of this thesis investigates the usability of silicon nanowires for optical sensor applications from a theoretical point of view. Therefore a method for the extraction of Raman and Infrared spectra from molecular dynamics simulations was developed. The method was applied to undoped silicon nanowires and shows that the surface properties of the nanowires has a significant effect on optical spectra. These results demonstrate the relevance of semiconductor nanostructures for applications in optical spectroscopy
au, D. Parlevliet@murdoch edu y David Parlevliet. "Silicon Nanowires for Photvoltaic Applications". Murdoch University, 2008. http://wwwlib.murdoch.edu.au/adt/browse/view/adt-MU20090930.140302.
Texto completoHill, Graeme. "Fabrication and characterization of nanowires". Thesis, University of Newcastle Upon Tyne, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.427296.
Texto completoMarks, Samuel R. "Characterisation of encapsulation grown nanowires". Thesis, University of Warwick, 2017. http://wrap.warwick.ac.uk/104205/.
Texto completoPhillips, Thomas William. "Flow synthesis of silver nanowires". Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/64907.
Texto completoKrali, Emiljana. "Thermoelectric effects in silicon nanowires". Thesis, Imperial College London, 2013. http://hdl.handle.net/10044/1/18084.
Texto completoBarnett, Christopher Jonathan. "Surface characterisation of ZnO nanowires". Thesis, Swansea University, 2015. https://cronfa.swan.ac.uk/Record/cronfa43027.
Texto completoZagorskiy, D. L., V. V. Korotkov, V. N. Kudryavtsev, S. A. Bedin, S. N. Sulyanov, K. V. Frolov, V. V. Berezkin y B. V. Mchedlishvili. "Matrix Synthesis of Magnetic Nanowires". Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35260.
Texto completoFawzy, Mirette. "Electrochemical synthesis of functional nanowires". Master's thesis, University of Cape Town, 2016. http://hdl.handle.net/11427/20972.
Texto completoBosisio, Riccardo. "Thermoelectric conversion in disordered nanowires". Thesis, Paris 6, 2014. http://www.theses.fr/2014PA066212/document.
Texto completoThis thesis is focused on thermoelectric conversion in disordered semiconductor nanowires in the field effect transistor configuration. We first consider a low temperature regime, when electronic transport is elastic. For a 1D Anderson model, we derive analytical expressions describing the typical thermopower of a single nanowire as a function of the applied gate voltage, and we show that it is largely enhanced at the nanowire band edges. Our results are confirmed by numerical simulations based on a Recursive Green Function calculation of the thermopower. We then consider the case of inelastic transport, achieved by phonon-assisted hopping among localized states (Variable Range Hopping). By solving numerically the Miller Abrahams random resistor network, we show that the thermopower can attain huge values when the nanowire band edges are probed. A percolation theory by Zvyagin extended to nanowires allows to qualitatively describe our results. Also, the mechanism of heat exchange between electrons and phonons at the band edges lead to the generation of hot and cold spots near the boundaries of a substrate. This effect, of interest for cooling issues in microelectronics, is showed for a set of parallel nanowires, a scalable and hence promising system for practical applications. The power factor and figure of merit of the device are also estimated.Finally, we characterize a general three-terminal system within the linear response (Onsager) formalism: we derive local and non-local transport coefficients, as well as generalized figures of merit. The possibility of improving the performance of a generic quantum machine is discussed with the help of two simple examples
Elfström, Niklas. "Silicon nanowires for biomolecule detection /". Stockholm : Material Physics, School of Information and Communication Technology, Royal Institute of Technology, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4695.
Texto completoParlevliet, David Adam. "Silicon nanowires for photovoltaic applications /". Murdoch University Digital Theses Program, 2008. http://wwwlib.murdoch.edu.au/adt/browse/view/adt-MU20090930.140302.
Texto completoParlevliet, David. "Silicon Nanowires for Photvoltaic Applications". Thesis, Parlevliet, David (2008) Silicon Nanowires for Photvoltaic Applications. PhD thesis, Murdoch University, 2008. https://researchrepository.murdoch.edu.au/id/eprint/1308/.
Texto completoParlevliet, David. "Silicon Nanowires for Photvoltaic Applications". Parlevliet, David (2008) Silicon Nanowires for Photvoltaic Applications. PhD thesis, Murdoch University, 2008. http://researchrepository.murdoch.edu.au/1308/.
Texto completoHerder, Charles H. (Charles Henry) III. "Study of ultranarrow superconducting NbN nanowires and nanowires under strong magnetic field for photon detection". Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/51603.
Texto completoIncludes bibliographical references (leaves 32-34).
Photon detection is an integral part of experimental physics, high-speed communication, as well as many other high-tech disciplines. In the realm of communication, unmanned spacecraft are travelling extreme distances, and ground stations need more and more sensitive and selective detectors to maintain a reasonable data rate. In the realm of computing, some of the most promising new forms of quantum computing require consistent and efficient optical detection of single entangled photons. Due to projects like these, demands are increasing for ever more efficient detectors with higher count rates. The Superconducting Nanowire Single-Photon Detector (SNSPD) is one of the most promising new technologies in this field, being capable of counting photons as faster than 100MHz and with efficiencies around 50%. Currently, the leading competition is from the geiger-mode avalanche photodiode, which is capable of ~20 ~70% efficiency at a ~5MHz count rate depending on photon energy. In spite of this, the SNSPD is still a brand-new technology with many potential avenues unexplored. Therefore, it is still possible that we can achieve even better efficiencies and count rates to keep up with the requirements of burgeoning technologies. This photon detector consists of a meandering superconducting nanowire biased close to its critical current. In this regime, a single incident photon can cause a section of the detector to switch to normal conduction, producing a voltage pulse due to its now-finite resistance. An electron micrograph is given in figure 1. The intrinsic limitations of the detector (disregarding the optical coupling mechanism and the support electronics) are dominated by two primary points. First is the efficiency with which the detector converts an absorbed photon into a voltage pulse. This is controlled by the behavior of the excited electrons at the point of incidence. I will discuss this in greater detail in the next section. The second is the electrothermal time constant of the detector. This limits the relaxation time of the detector and therefore limits the maximum rate at which the detector can count photons. As we will see, detection efficiency increases as the number of Cooper pairs that need to be excited into the normal state to switch conduction modes decreases. One way to decrease the bandgap is to decrease the cross-section of the wire. This has already been shown to increase detection efficiency, but this cannot be done to arbitrarily narrow wires. Not only is there a limitation to fabrication, but there are also interesting quantum effects that occur at very narrow wire widths. Note that much of the research that has been done to understand these quantum effects has been undertaken on wires much wider than those we will be using. Simultaneously, most of the materials used previously have coherence lengths much longer than NbN. Therefore, even though our wires are narrower by a substantial factor, they are still wider than the coherence length of NbN. As such the validity of the one-dimensional approximation to be presented in in 2.2 is debatable for our wires. However, it should be apparent that regardless of behavior, thermal and quantum phase slips will be one of the limiting factors in producing ultra-narrow nanowire photon detectors. Until now, photon detectors have only used current biasing techniques. However, it is well known that both magnetic field and current have the effect of reducing the energy required to excite superconducting charge carriers. Therefore, it may be possible to detect photons using magnetic field close to H, instead of current close to Ic. It is important to note, however, that the readout of the detector in its current configuration depends on some bias current to produce a voltage pulse. Therefore, with the current detector architecture, one still needs a significant bias current. For my thesis, I have first investigated the theory of supercurrents in ultranarrow wires and confirmed the behavior of this theory with our materials and fabrication techniques in order to establish a lower bound for wire width where photon detection is still possible. In addition, I have constructed and executed an initial experiment to test how photon detectors behave under magnetic field bias conditions. I have measured how these different bias conditions affect the efficiency of the detector as well as the dark count rate.
by Charles H. Herder, III.
S.B.
Kockert, Maximilian Emil. "Thermoelectric transport properties of thin metallic films, nanowires and novel Bi-based core/shell nanowires". Doctoral thesis, Humboldt-Universität zu Berlin, 2021. http://dx.doi.org/10.18452/23001.
Texto completoThermoelectric phenomena can be strongly modified in nanomaterials compared to the bulk. The determination of the electrical conductivity, the absolute Seebeck coefficient (S) and the thermal conductivity is a major challenge for metrology with respect to micro- and nanostructures because the transport properties of the bulk may change due to surface and confinement effects. Within the scope of this thesis, the influence of size effects on the thermoelectric properties of thin platinum films is investigated and compared to the bulk. For this reason, a measurement platform was developed as a standardized method to determine S of a thin film. Structural properties, like film thickness and grain size, are varied. Boundary and surface scattering reduce S of the thin films compared to the bulk. In addition, a method is demonstrated to determine S of individual metallic nanowires. For highly pure and single crystalline silver nanowires, the influence of nanopatterning on the temperature dependence of S is shown. A model allows the distinct decomposition of the temperature-dependent S of platinum and silver into a thermodiffusion and phonon drag contribution. Furthermore, the thermoelectric transport properties of individual bismuth-based core/shell nanowires are investigated. The influence of the shell material (tellurium or titanium dioxide) and spatial dimension of the nanowire on the transport properties are discussed. Scattering at surfaces, indentations and interfaces between the core and the shell reduces the electrical and the thermal conductivity. A compressive strain induced by the shell can lead to a band opening of bismuth increasing S. The core/shell system points towards a route to successfully tailor the thermoelectric properties of bismuth.
Kim, Dong Sik. "Growth and characterization of ZnO nanowires". kostenfrei, 2009. http://nbn-resolving.de/urn:nbn:de:gbv:3:4-455.
Texto completoRanjan, Nitesh. "Dielectrophoretic formation of nanowires and devices". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1234886392156-77111.
Texto completoMüller, Torsten. "Ion Beam Synthesis of Ge Nanowires". Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29801.
Texto completoSlinger, Jane Bronwyn. "Post-deposition doping of silicon nanowires". University of the Western Cape, 2018. http://hdl.handle.net/11394/5695.
Texto completoSilicon nanowires (Si NWs) continue to demonstrate superior properties to their bulk counterparts, with respect to their morphological and electrical transport properties for the use in photovoltaic (PV) applications. The two most common and simplest approaches for Si NW fabrication are the bottom-up approach, namely, vapour-liquidsolid (VLS) growth and the top-down approach, namely, the metal-assisted chemical etching (MaCE) fabrication technique. Thermal diffusion of phosphorus (P) in Si is at present the primary method for emitter formation in Si solar cell processing. Most work done in the literature that is based on the diffusion doping of Si NWs has been carried out by means of VLS-grown Si NWs. Therefore, there is a lack of the understanding of the particular diffusion mechanism of applying the phosphorus dopant source to the MaCE-grown Si NWs.
KANJAMPURATH, SIVAN ASWATHI. "Carrier dynamics in semiconductor nanowires". Doctoral thesis, 2021. http://hdl.handle.net/11573/1500622.
Texto completoSutrakar, Vijay Kumar. "A Computational Study of Structural and Thermo-Mechanical Behavior of Metallic Nanowires". Thesis, 2013. http://etd.iisc.ac.in/handle/2005/3370.
Texto completoSutrakar, Vijay Kumar. "A Computational Study of Structural and Thermo-Mechanical Behavior of Metallic Nanowires". Thesis, 2013. http://etd.iisc.ernet.in/2005/3370.
Texto completoBid, Aveek. "Resistance Fluctuations And Instability In Metal Nanowires". Thesis, 2006. https://etd.iisc.ac.in/handle/2005/429.
Texto completoBid, Aveek. "Resistance Fluctuations And Instability In Metal Nanowires". Thesis, 2006. http://hdl.handle.net/2005/429.
Texto completoChang, Ko-Wei y 張恪維. "Formation and Characterization of Semiconductor Nanowires and Nanowire Heterostructures". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/70453796279100838749.
Texto completo國立成功大學
化學工程學系碩博士班
93
One-dimensional (1-D) nanostructures, such as nanotubes, nanowires, and nanorods have great potential for improving our understanding of the fundamental concepts of the roles of both dimensionality and size on physical properties, as well as for application in nanodevices and functional materials. In this dissertation, a bottom up approach for synthesis of semiconductor nanowires and nanowire hetorostructures are demonstrated. Many research efforts have been thus devoted to synthesize single crystal Ga2O3 nanowires via the vapor-liquid-solid (VLS) mechanism under high temperatures (800-1240 °C). In the first part of the dissertation, β-Ga2O3 nanowires were synthesized using Ga metal and H2O vapor in the present of Ni catalyst on the substrate at 800 oC. Two kinds of Ga vapor supply systems are employed in this study. Remarkable reduction of the diameter and increase of the length of the β-Ga2O3 nanowires are achieved by the separation of Ga and H2O vapor before they reach the substrate for a sufficient supply of the Ga vapor. An alternative method to synthesize β-Ga2O3 nanowires on Au- pretreated Si (100) and sapphire (0001) substrates at the temperatures ranging from 850 to 450 °C has also been further experimental by using a single precursor of gallium acetylacetonate ((CH3COCHCOCH3)3Ga) that could provide not only sufficient Ga vapor but also O vapor during the nanowires growth. Size control of the nanowire diameters was achieved by varying the growth conditions, i.e., substrate temperatures, pressures, and Ga vapor concentration. In addition, selective growth of vertically well-aligned Ga2O3 nanowires has been successfully grown on Au-coated sapphire (0001) substrates at temperatures of 450~ 650 oC. Structural characterization of the Ga2O3 nanowires by X-ray-diffraction (XRD) and transmission electron microscopy (TEM) reveals that the nanowires are preferentially oriented in the (-2,0,1) direction. Formation of the flower-like nanorod bundles at a temperature of 750 oC via the VS mechanism is also demonstrated. Next, we demonstrated the synthesis of GaN nanowires on Ni-pretreated Si substrates via the VLS mechanism at temperatures lower than those have been reported using ammonia gas and a Ga organometallic compound, i.e. gallium acetylacetonate, with a low decomposition temperature (~196 oC). Structural characterization of the 1D GaN nanostructures by HRTEM shows that straight GaN nanowires, needle-like nanowires (nanoneedles), and bamboo-shoot-like nanoneedles are synthesized at 750, 650, and 550 oC, respectively. In addition to selecting a proper catalyst, providing sufficient precursors has been demonstrated to be a crucial factor for the low-temperature growth of 1D GaN nanostructures via the VLS mechanism. For the synthesis of the Ga2O3/ZnO core-shell nanowires, a two-stage process was used. Well-aligned β-Ga2O3 nanowires were first grown on Au pre-coated sapphire (0001) substrates. The Ga2O3 nanowires were then used as 1D template for the ZnO-shell deposition. Formation of the well-aligned and single-crystalline ZnGa2O4 nanowires on sapphire (0001) substrates has been achieved via annealing of the Ga2O3/ZnO core-shell nanowires. The thickness of the original ZnO shell and the thermal budget of the annealing process play crucial roles for preparing the single-crystalline ZnGa2O4 nanowires. Structural analyses of the annealed nanowires reveal the existence of an epitixal relationship between ZnGa2O4 and Ga2O3 phases during the solid state reaction. A strong CL emission band centered at 360 nm and a small tail at 680 nm are obtained from the single-crystalline ZnGa2O4 nanowires, suggesting the existence of the oxygen vacancies within them. With the similar method as just mention above, we also demonstrate the formation of Ga2O3/TiO2 core-shell heterostructure at the temperature of 400 oC~ 600 oC by low pressure chemical vapor deposition. TEM analyses reveal that the amorphous TiO2 layer and TiO2 nanoparticles were formed on the surfaces of the Ga2O3 nanowires at temperatures of 400 oC and 600 oC, respectively. Well- aligned Ga2O3/TiO2 nano-barcodes were formed after further 1000 oC annealing of the core-shell nanowires for 1 hr.
Smith, Damon Allen. "Mechanical, electromechanical, and optical properties of germanium nanowires". 2009. http://hdl.handle.net/2152/7678.
Texto completotext
Tzeng, Jiun-Wei y 曾俊瑋. "Study on Electromechanical Properties of Silicon Nanowires and Nanowire FETs". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/42357116449026610197.
Texto completo正修科技大學
電子工程研究所
100
The thesis is to study the piezoresistive properties of silicon (Si) nanowire (NW) and electromechanical properties of SiNWFETs. Fisrtly, we discuss the piezoresistive properties of SiNWs through a four-point bending technique (4PB). The 4PB can apply an external uniaxial mechanical stress on SiNWs. The magnitude of mechanical stress can be directly obtained by a foil strain gauge mounted on the surface of SiNWs. Then a new current-voltage stress measurement system is carried out for further analysis of piezoresistive properties of SINWs. The piezoresistive coefficient of 41×10-11 Pa-1 and gauge factor of 68 can be obtained. The values appear to be consistent with the piezoresistive properties of Si bulk. The second part is to explore the electromechanical properties of SiNWFETs. We use the back bulk electrode as the gate of SiNWs. This is so-called the silicon nanowire FETs. Similarly, the 4PB can be also used to apply a uniaxial tensile mechanical stress to SiNWFETs. Then we can observe the electromechanical properties of SiNWFETs. From the view of our experiment data, the piezoresistive coefficient and gauge factor have been greatly increased. This results can carry out a novel “electromechanical devices” of SiNWFETs.
Tsai, Wei-Chih y 蔡維志. "Characterization and Applications of Tungsten Oxide Nanowires, Nickel Nanowires, and Zinc Oxide Nanowires". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/28337297150514241409.
Texto completo國立成功大學
微電子工程研究所碩博士班
97
In this thesis, the growth and physical/chemical properties of one-dimensional tungsten oxide nanowires (TONWs), nickel nanowires (NiNWs), zinc oxide nanowires (ZnO-NWs) were investigated. This study also proposes the use of a these NWs structures for potential in applications of nano electronic and optoelectronic devices. In the first study, for the growth of TONWs, pure tungsten films with a thickness of 60 nm on n-type Si wafers were subjected to thermal annealing in a quartz tube furnace at 700oC in nitrogen ambient for 30 min. After thermal annealing, straight TONWs with a density of around 250 贡m-2 and length/diameter of around 0.2 贡m/20 nm were obtained. However, oxygen adsorption might arise from the oxygen contamination of source material during wire growth, the residual oxygen in sputtered films or intentionally doped oxygen gas during sputtering deposition, and oxygen/humidity adsorption of the grown TONWs. In this study, H-plasma treatment is used to reduce the amount of oxygen adsorption and to tailor the density and morphologies of TONWs. Improved field emission (FE) characteristics are demonstrated and the related reduction in the effective emission barrier height is analyzed and discussed. In general, FE current is a complex function of the work function, tip shape, diameter, length, and density of the emitter array. All of these factors affect the local field around the tip of nanowires and hence the FE current. In the previous study, the as-grown TONWs with a typical work function of 6.2 eV and their FE characteristics have been studied. Nanowires with a lower work function are expected to give better FE characteristics. So NiNWs with a lower work function of 5.15 eV are used as new electron field emitters. Well-ordered and vertically-aligned NiNWs with a controllable length in the range of 2.7~22 mm and high density of 1.5-2.1 109 cm-2 were grown inside the nanopores of anodic alumina oxide templates (AAOTs) using a simple electrochemical deposition (ECD) method. To measure electron FE characteristics of the prepared NiNWs, 60-mm-thick AAOTs were served as an insulating spacer. The relatively better FE characteristics with a turn-on field and the enhancement factor of 8.5-贡m-long NiNWs prepared within 100 pore diameter AAOTs were about 3.46 V/mm and 17621, respectively. It is expected that NiNWs prepared inside the nanopores of AAOTs with controllable diameters and lengths could offer an additional choice of material for electron field emitter applications. In addition, in order to obtain the pristine vertically-aligned NiNWs for FE characteristics measurements, the AAOTs were removed and the electron FE characteristics of the prepared NiNWs before and after removing the AAOTs were measured and discussed. After removing the AAOT, NiNWs showed better electron FE characteristics than the others within the AAOT. The effect of the aluminum oxide pillars on the FE characteristics of NiNWs has been examined, and their removal might make possible the immunity of FE electrons collision and accumulation on the vertical surface of the pillars, leading to a significant improvement in the FE performance. Recently, nano heterostructured materials have attracted lots of attention because of the quantum confinement effects of nano heterojunctions (NHJs) and for their potential applications on quantum optoelectronic devices. In this study, well-ordered and vertically-aligned NiO/ZnO NHJs were grown inside the nanopores of AAOTs using ECD and thermal oxidization. This synthesis method presents a simple and novel method for the self-synthesis of NHJs NWs without using catalysts, easily growing and the length of NWs can be controlled accurately. The electrical characteristics of NiO/ZnO NHJs show a rectifying behavior of a p-n junction, while the Ni/Zn NHJs show an ohmic behavior. The optoelectronic characteristics of NiO/ZnO NHJs show a well rectifying behavior and strong photo response to the ultraviolet (UV) lights (254 and 366 nm). Possible carrier transport of the NiO/ZnO NHJs under UV light irradiation is analyzed and discussed. Because of less dimension of the NiO/ZnO NHJs show profound quantum confinement effect, these devices are expected to exhibit much better optoelectronic performance than conventional planar devices. In order to improve the optoelectronic properties of the NHJs and to overcome the processing expensive and time consuming, a novel technology using hydrothermal growth (HTG) associated with deposition techniques for the fabrication of nano hetero structure based on ZnO nanowires (ZnO-NWs) is reported in this study. The HTG method is the most commonly used for commercial applications because of their low cost of equipment, large-area and uniform fabrication, and low processing temperature. NiO/ZnO-NWs NHJs were formed via e-beam deposition of p-type NiO onto the vertical-aligned ZnO-NWs grown by HTG method. Furthermore, the use of a ZnO-NW-based heterojunction structure for applications of nano optoelectronic sensors and photovoltaic devices was proposed. The optoelectronic properties of the NiO/ZnO-NWs NHJs with different NiO thicknesses under UV light (366 nm, 6 mW/cm2) illumination, with good UV sensitivity were analyzed and discussed. Under simulated AM 1.5G solar light illumination, the fabrication of NiO/Zn-NWs NHJs solar cell and its photovoltaic characteristics were also presented. Finally, ZnO with a wide direct bandgap (3.37 eV) and a large excitation biding energy (60 meV) is a promising n-type semiconductor material for applications of light emitting diodes, sensors, and solar cells. In addition, ZnO-NWs are widely used to yield better efficiency for sensor and solar energy than thin films because of their nanosized structures, high integration, high surface active area, attractive optoelectronic properties, and the profound quantum confinement effect. For the application of photovoltaic and solar cell devices, the growth of ZnO-NWs with controllable diameter/length/density and fabrication of n-ZnO-NWs-based NHJs with p-type GaN are studied. A number of ZnO-NWs/p-GaN NHJs have been studied as a strong candidate for optoelectronic device applications, since these materials (ZnO and GaN) have similar fundamental bandgap energy, the relatively close physical properties, and a low lattice constant mismatch. Under AM 1.5G solar light illumination, the fabrication of n-ZnO-NW/p-GaN solar cells and their photovoltaic characteristics with different lengths of ZnO-NW were analyzed. Effects of the length of ZnO-NWs on the photovoltaic performance of the ZnO-NWs/p-GaN NHJs were also investigated and discussed.
Shakthivel, Dhayalan. "Thermodynamics and Kinetics of Nucleation and Growth of Silicon Nanowires". Thesis, 2014. http://etd.iisc.ernet.in/handle/2005/2896.
Texto completoRoy, Ahin. "Investigation of Structural and Electronic Aspects of Ultrathin Metal Nanowires". Thesis, 2015. http://etd.iisc.ac.in/handle/2005/3091.
Texto completoRoy, Ahin. "Investigation of Structural and Electronic Aspects of Ultrathin Metal Nanowires". Thesis, 2015. http://hdl.handle.net/2005/3091.
Texto completo"Full Band Monte Carlo Simulation of Nanowires and Nanowire Field Effect Transistors". Doctoral diss., 2016. http://hdl.handle.net/2286/R.I.40344.
Texto completoDissertation/Thesis
Doctoral Dissertation Electrical Engineering 2016