Literatura académica sobre el tema "Nanostructured Oxide Semiconductors"
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Artículos de revistas sobre el tema "Nanostructured Oxide Semiconductors"
Sun, Peng. "Gas Sensors Based on Oxide Semiconductors with Porous Nanostructures". Proceedings 14, n.º 1 (19 de junio de 2019): 13. http://dx.doi.org/10.3390/proceedings2019014013.
Texto completoDíaz, Carlos, Marjorie Segovia y Maria Luisa Valenzuela. "Solid State Nanostructured Metal Oxides as Photocatalysts and Their Application in Pollutant Degradation: A Review". Photochem 2, n.º 3 (5 de agosto de 2022): 609–27. http://dx.doi.org/10.3390/photochem2030041.
Texto completoJohn Chelliah, Cyril R. A. y Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures". Nanotechnology Reviews 6, n.º 6 (27 de noviembre de 2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.
Texto completoGaloppini, Elena. "(Invited) Bridge Design for Photoactive Molecules at Interfaces". ECS Meeting Abstracts MA2018-01, n.º 31 (13 de abril de 2018): 1849. http://dx.doi.org/10.1149/ma2018-01/31/1849.
Texto completoLimongelli, Julia, Felicia Tolea, Mihaela Valeanu, Lucian Diamandescu, Tianhong Xu y Monica Sorescu. "Nanostructured iridium oxide-hematite magnetic ceramic semiconductors". Ceramics International 41, n.º 1 (enero de 2015): 333–43. http://dx.doi.org/10.1016/j.ceramint.2014.08.076.
Texto completoAnta, Juan A. "Electron transport in nanostructured metal-oxide semiconductors". Current Opinion in Colloid & Interface Science 17, n.º 3 (junio de 2012): 124–31. http://dx.doi.org/10.1016/j.cocis.2012.02.003.
Texto completoMcGehee, Michael D. "Nanostructured Organic–Inorganic Hybrid Solar Cells". MRS Bulletin 34, n.º 2 (febrero de 2009): 95–100. http://dx.doi.org/10.1557/mrs2009.27.
Texto completoDadkhah, Mehran y Jean-Marc Tulliani. "Nanostructured Metal Oxide Semiconductors towards Greenhouse Gas Detection". Chemosensors 10, n.º 2 (30 de enero de 2022): 57. http://dx.doi.org/10.3390/chemosensors10020057.
Texto completoRud, Vasily, Doulbay Melebaev, Viktor Krasnoshchekov, Ilya Ilyin, Eugeny Terukov, Maksim Diuldin, Alexey Andreev, Maral Shamuhammedowa y Vadim Davydov. "Photosensitivity of Nanostructured Schottky Barriers Based on GaP for Solar Energy Applications". Energies 16, n.º 5 (28 de febrero de 2023): 2319. http://dx.doi.org/10.3390/en16052319.
Texto completoBhaumik, Anagh, Austin M. Shearin, Rishi Patel y Kartik Ghosh. "Significant enhancement of optical absorption through nano-structuring of copper based oxide semiconductors: possible future materials for solar energy applications". Phys. Chem. Chem. Phys. 16, n.º 22 (2014): 11054–66. http://dx.doi.org/10.1039/c4cp00827h.
Texto completoTesis sobre el tema "Nanostructured Oxide Semiconductors"
Berhe, Seare Ahferom. "Acceptor-sensitizers for Nanostructured Oxide Semiconductor in Excitonic Solar Cells". Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc699927/.
Texto completoWang, Jinfeng. "Characterization and synthesis of nanoscale materials". Diss., Rolla, Mo. : Missouri University of Science and Technology, 2008. http://scholarsmine.mst.edu/thesis/pdf/JinfengWang_09007dcc80564540.pdf.
Texto completoVita. The entire thesis text is included in file. Title from title screen of thesis/dissertation PDF file (viewed August 28, 2008) Thesis completed as part of a cooperative degree program with Missouri University of Science & Technology and the University of Missouri--St. Louis. Includes bibliographical references (p. 129-142).
Akande, Amos Adeleke. "Gas sensing properties of nanostructured vanadium oxide semiconductors by chemoresistive and optical methods". Thesis, University of Pretoria, 2017. http://hdl.handle.net/2263/65892.
Texto completoThesis (PhD)--University of Pretoria, 2017.
Physics
PhD
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Zhang, Shaolin. "Wide band gap nanomaterials and their applications". Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B41758225.
Texto completoZhang, Shaolin y 張少林. "Wide band gap nanomaterials and their applications". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B41758225.
Texto completoLima, Francisco Anderson de Sousa. "Application of transition-metal-oxide-based nanostructured thin films on third generation solar cells". reponame:Repositório Institucional da UFC, 2015. http://www.repositorio.ufc.br/handle/riufc/14584.
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One of the greatest challenges of our time is to devise means to provide energy in a sustainable way to attend an exponentially growing demand. The energy demand is expected to grow 56% by 2040. In this context, the use of clean and sustainable sources of energy is imperative. Among these sources, solar energy is the only one which can meet the total world energy requirement even considering such large growth in demand. The solar power incident on the Earth's surface every second is equivalent to 4 trillion 100-watt light bulbs. Photovoltaic solar cells are one of several ways to harness solar energy. These cells convert solar energy directly into electricity. Commercial photovoltaic devices are already a reality, but their share of the world energy matrix is still quite small, mainly due to the high costs. Next generation photovoltaics open a number of new possibilities for photovoltaic energy applications that can potentially decrease the overall cost of energy production. Transition metal semiconductor oxides are promising materials that can be produced by low cost methods and o er interesting new features. The use of these materials in next generation photovoltaics is therefore a very promising and interesting application. In this thesis work zinc, titanium and vanadium oxides were used in next generation solar cells. Thin lms of zinc oxide were synthesized by the low cost and environmentally friendly techniques of electrodeposition and hydrothermal synthesis and applied as working electrodes in highly e cient dye sensitized solar cells (DSSCs). The lms were characterized by structural and optical techniques while the cells were tested by current vs: voltage and quantum e ciency measurements. The e ciencies of these cells were as high as 2.27% using ZnO thin lms without any post deposition treatment. Moreover, natural dyes extracted from plants of northeastern Brazil were applied as sensitizers in DSSCs assembled with commercial available TiO 2 as working electrode. The natural dyes were extracted employing very simple methods and were characterized by XPS and UPS techniques. Their band alignments were shown to be compatible with the TiO 2 as well as with the mediator electrolyte. The e ciency of DSSCs sensitized with natural dyes were as high as 1.33%. Finally, water based V 2 O 5 was used as hole transport medium (HTM) in conventional organic solar cells (OSCs) and ITO-free, plastic OSCs. The results obtained with V 2 O 5 were compared with the results obtained from cells assembled with PEDOT:PSS, which is the most used HTM. This comparison showed that the use of V 2 O 5 as HTM can lead to more e cient OSCs. The stability of these devices were evaluated by tests applying the ISOS standards ISOS-D-1, ISOS-L-1 and ISOS-O-1. A UV- lter and a protective graphene oxide (GO) layer were employed seeking to improve the stability of OSCs. The combination of both UV- lter and GO protective layer was shown to be the most e ective way to improve the stability of these devices
Um dos maiores desa os do nosso tempo e desenvolver formas para fornecer energia de forma sustent avel para atender uma demanda que cresce exponencialmente e que dever a crescer 56% at e 2040. Neste contexto, o uso de fontes limpas e sustent aveis de energia e um imperativo. Entre essas fontes, a energia solar e a unico que pode satisfazer a ne- cessidade total de energia do mundo, mesmo considerando o crescimento na demanda. A pot^encia solar incidente na superf cie da Terra a cada segundo e equivalente a 4 trilh~oes de l^ampadas de 100 watts. C elulas solares fotovoltaicas s~ao uma das v arias maneiras de aproveitar a energia solar, convertendo-a diretamente em eletricidade. Dispositivos com- erciais fotovoltaicos j a s~ao uma realidade, mas a sua participa c~ao na matriz energ etica mundial ainda e muito pequena, principalmente devido aos seus custos elevados. C elulas fotovoltaicas de nova gera c~ao abrem uma s erie de novas possibilidades para aplica c~oes de energia fotovoltaica que pode diminuir o custo total de produ c~ao de energia. Oxidos semicondutores de metais de transi c~ao s~ao materiais promissores que podem ser produzi- dos atrav es de m etodos de baixo custo e que possuem caracter sticas interessantes. Por conseguinte, o uso destes materiais em energia fotovoltaica de pr oxima gera c~ao se apre- senta com uma aplica c~ao promissora. Nesta tese de doutorado oxidos de zinco, tit^anio e van adio foram utilizados em c elulas solares de pr oxima gera c~ao. Filmes nos de oxido de zinco foram sintetizados por eletrodeposi c~ao e s ntese hidrot ermica. Os lmes foram apli- cados como eletrodos de trabalho em c elulas solares sensibilizadas por corante (DSSCS) altamente e cientes. Os lmes foram caracterizados por t ecnicas estruturais e oticas en- quanto que as c elulas foram testadas por medidas de corrente vs: voltagem e de e ci^encia qu^antica. A e ci^encia dessas c elulas atingiu 2,27% utilizando lmes nos de ZnO sem qualquer tratamento p os-deposi c~ao. Al em disso, corantes naturais extra dos de plan- tas do nordeste do Brasil foram aplicados como sensibilizadores em DSSCs montadas com TiO 2 comercial utilizado como eletrodo de trabalho. Os corantes naturais foram extra das empregando m etodos simples e foram caracterizados por espectroscopia de fotoel etrons excitados por raios X e por radia c~ao ultravioleta, XPS e UPS respectivamente. Seus alin- hamentos de banda se mostraram compat veis com o TiO 2 e com o eletrodo de regenera c~ao. A e ci^encia das DSSCs sensibilizadas com corantes naturais chegou a 1,33%. Finalmente, V 2 O 5 a base de agua foi usado como material transportador de buracos (HTM) em c elulas solares org^anicas (OSCs) convencionais e OSCs de pl astico constru das sem ITO. Os re- sultados obtidos com V 2 O 5 foram comparados com os resultados de c elulas constru das com PEDOT:PSS, que e o HTM mais utilizado. Esta compara c~ao revelou que o uso de V 2 O 5 como HTM pode levar a OSCs mais e cientes. A estabilidade destes dispositivos foi avaliada por testes aplicando os padr~oes ISOS-D-1, ISOS-L-1 e ISOS-O-1. O uso de ltros ultravioleta e de uma camada protetora de oxido de grafeno reduzido foi testado com o intuito de melhorar a estabilidade desses dispositivos. O uso de uma combina c~ao de ambos se mostrou a forma mais efetiva de melhorar a estabilidade das OSCs
Chen, Xinyi y 陈辛夷. "Wide band-gap nanostructure based devices". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2012. http://hub.hku.hk/bib/B49799290.
Texto completopublished_or_final_version
Physics
Doctoral
Doctor of Philosophy
Hansson, (f d. Wadeasa) Amal. "Heterojunctions between zinc oxide nanostructures and organic semiconductor". Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71843.
Texto completoThe series number "1504" is incorrect and is changed in the electronic version to the correct number "1405".
González, Zalba Miguel Fernando. "Single donor detection in silicon nanostructures". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608181.
Texto completoKhunou, Ramotseng. "Gas sensing properties of Ceo2 nanostructures". University of the Western Cape, 2020. http://hdl.handle.net/11394/7909.
Texto completoThe industrial safety requirements and environmental pollution have created a high demand to develop gas sensors to monitor combustible and toxic gases. As per specifications of World Health Organization (WHO) and Occupational Safety and Health Administration (OSHA), lengthy exposure to these gases lead to death which can be avoided with early detection. Semiconductor metal oxide (SMO) has been utilized as sensor for several decades. In recent years, there have been extensive investigations of nanoscale semiconductor gas sensor.
Libros sobre el tema "Nanostructured Oxide Semiconductors"
Teherani, Ferechteh Hosseini. Oxide-based materials and devices: 24-27 January 2010, San Francisco, California, United States. Bellingham, WA: SPIE, 2010.
Buscar texto completoJ, Rogers David, Ferechteh Hosseini Teherani y D. C. Look. Oxide-based materials and devices III: 22-25 January 2012, San Francisco, California, United States. Editado por SPIE (Society). Bellingham, Wash: SPIE, 2012.
Buscar texto completoC, Jagadish y Pearton S. J, eds. Zinc oxide bulk, thin films and nanostructures: Processing, properties and applications. Amsterdam: Elsevier, 2006.
Buscar texto completoTsu-Jae, King, Materials Research Society Meeting y Symposium on CMOS Front-End Materials and Process Technology (2003 : San Francisco, Calif.), eds. CMOS front-end materials and process technology: Symposium held April 22-24, 2003, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2003.
Buscar texto completoI, Gardner Mark y Materials Research Society, eds. Novel materials and processes for advanced CMOS: Symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2003.
Buscar texto completoSudipta, Seal, Materials Research Society Meeting y Symposium on Semiconductor Materials for Sensing (2004 : Boston, Mass.), eds. Semiconductor materials for sensing: Symposium held November 29-December 2, 2004, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2005.
Buscar texto completoCMOS nanoelectronics: Analog and RF VLSI circuits. New York: McGraw-Hill, 2011.
Buscar texto completoNano-semiconductors: Devices and technology. Boca Raton, FL: CRC Press, 2012.
Buscar texto completoNano-CMOS gate dielectric engineering. Boca Raton: CRC Press, 2012.
Buscar texto completoInternational, Symposium on Advanced Materials (11th 2009 Islamabad Pakistan) y International Symposium on Technology Evolution for Silicon Nano-Electronics (2010 Tokyo Institute of Technology). Advanced materials XI: Selected, peer reviewed papers from the 11th International Symposium on Advanced Materials, 08-12 August, 2009, Islamabad, Pakistan. Stafa-Zurich, Switzerland: Trans Tech Publications, 2010.
Buscar texto completoCapítulos de libros sobre el tema "Nanostructured Oxide Semiconductors"
Valeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov y Dmitrii I. Petukhov. "Porous Anodic Aluminum Oxide: Structure, Properties, and Application in Semiconductor Technology". En Nanostructured Semiconductors in Porous Alumina Matrices, 19–36. Includes bibliographical references and index.: Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-2.
Texto completoValeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov y Dmitrii I. Petukhov. "Results of Modeling the Deposition Processes of Nanofilms onto Aluminum Oxide Templates". En Nanostructured Semiconductors in Porous Alumina Matrices, 205–45. Includes bibliographical references and index.: Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-10.
Texto completoValeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov y Dmitrii I. Petukhov. "Theoretical Models for Investigating The Processes of Nanofilm Deposition onto Porous Templates of Aluminum Oxide". En Nanostructured Semiconductors in Porous Alumina Matrices, 85–140. Includes bibliographical references and index.: Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-6.
Texto completoJanotti, A., J. B. Varley, J. L. Lyons y C. G. Van de Walle. "Controlling the Conductivity in Oxide Semiconductors". En Functional Metal Oxide Nanostructures, 23–35. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_2.
Texto completoLee, S. H. "ZnO and GaN Nanostructures and their Applications". En Oxide and Nitride Semiconductors, 459–505. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_10.
Texto completoVeal, T. D., P. D. C. King y C. F. McConville. "Electronic Properties of Post-transition Metal Oxide Semiconductor Surfaces". En Functional Metal Oxide Nanostructures, 127–45. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_6.
Texto completoGupta, Nidhi, Omita Nanda, Pramod Kumar, V. K. Jain y Kanchan Saxena. "Synthesis of Zinc Oxide Nanostructures by Chemical Routes". En Physics of Semiconductor Devices, 641–43. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_163.
Texto completoSauer, Rolf y Klaus Thonke. "Donor-Related Exciton Luminescence in Wide-Bandgap Semiconductors: Diamond, Zinc Oxide, and Gallium Nitride". En Optics of Semiconductors and Their Nanostructures, 73–106. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09115-9_4.
Texto completoAndreu, Teresa, Jordi Arbiol, Andreu Cabot, Albert Cirera, Joan Daniel Prades, Francisco Hernandez-Ramírez, Albert Romano-Rodríguez y Joan R. Morante. "Nanosensors: Controlling Transduction Mechanisms at the Nanoscale Using Metal Oxides and Semiconductors". En Sensors Based on Nanostructured Materials, 1–51. Boston, MA: Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-77753-5_5.
Texto completoMagdaluyo, Eduardo R., Ian Harvey J. Arellano, Alvin Karlo G. Tapia, Roland V. Samargo y Leon M. Payawan. "Photoluminescence and Fractal Properties of Diverse Carbothermal Zinc Oxide Nanostructures". En Semiconductor Photonics: Nano-Structured Materials and Devices, 92–94. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.92.
Texto completoActas de conferencias sobre el tema "Nanostructured Oxide Semiconductors"
Ivanov, Denis, Ilya Marinov, Yuriy Gorbachev, Alexander Smirnov y Valeria Krzhizhanovskaya. "Computer Simulation of Laser Annealing of a Nanostructured Surface". En ASME 2009 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/detc2009-87087.
Texto completoGwo, Shangjr. "Metal-oxide-semiconductor plasmonic nanorod lasers (Conference Presentation)". En Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, editado por Diana L. Huffaker y Holger Eisele. SPIE, 2017. http://dx.doi.org/10.1117/12.2257098.
Texto completoYu, Jae Su y Yeong Hwan Ko. "Metal-oxide semiconductor nanostructures for energy and sensing applications". En SPIE OPTO, editado por Ferechteh H. Teherani, David C. Look y David J. Rogers. SPIE, 2014. http://dx.doi.org/10.1117/12.2041847.
Texto completoChung, Peng-Fei, Ting-Wien Su, Ching-Fuh Lin, Miin-Jang Chen y Wei-Fang Su. "Nanostructured metal-oxide semiconductor devices for efficient band-edge electroluminescence". En Symposium on Integrated Optoelectronic Devices, editado por David J. Robbins y Ghassan E. Jabbour. SPIE, 2002. http://dx.doi.org/10.1117/12.463847.
Texto completoShishiyanu, T., S. Shishiyanu, O. Lupan, V. Sontea y A. Bragorenco. "Novel Zinc Oxide Nanostructured thin Films for Volatile Organic Compaunds Gas Sensors". En 2006 International Semiconductor Conference. IEEE, 2006. http://dx.doi.org/10.1109/smicnd.2006.283968.
Texto completoLiu, Lei, Derek Waldron, Vladimir Timochevski y Hong Guo. "Automistic modeling of direct tunnelling in metal-oxide-semiconductor nanostructures". En 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306200.
Texto completoPIQUERAS, J., A. CREMADES, P. FERNÁNDEZ, J. GRYM, D. MAESTRE, B. MÉNDEZ y E. NOGALES. "GROWTH AND LUMINESCENCE OF ELONGATED MICRO- AND NANOSTRUCTURES OF OXIDE SEMICONDUCTORS". En Reviews and Short Notes to Nanomeeting-2005. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701947_0106.
Texto completoLupan, Oleg, Vasilii Cretu, Victor Sontea, Serghei Railean, Lidia Ghimpu, Ion Tiginyanu, Yauheni Rudzevich, Yuqing Lin y Lee Chow. "Copper doped zinc oxide micro- and nanostructures for room-temperature sensorial applications". En 2013 International Semiconductor Conference (CAS 2013). IEEE, 2013. http://dx.doi.org/10.1109/smicnd.2013.6688082.
Texto completoLaha, Apurba, E. Bugiel, R. Ranjith, H. J. Osten, Andreas Fissel, V. V. Afanas'ev y M. Badylevich. "Semiconductor nanostructures in crystalline rare earth oxide for nanoelectronic device applications". En 2010 International Conference on Microelectronics (ICM). IEEE, 2010. http://dx.doi.org/10.1109/icm.2010.5696129.
Texto completoBaraneedharan, P. y J. Manikandan. "Metal Oxide Semiconductor Nanostructures Surface Properties for Gas Sensing – A Review". En 2022 Sixth International Conference on I-SMAC (IoT in Social, Mobile, Analytics and Cloud) (I-SMAC). IEEE, 2022. http://dx.doi.org/10.1109/i-smac55078.2022.9986495.
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