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Artículos de revistas sobre el tema "Nanosecond laser annealing"

Autor: Grafiati

Publicado: 25 de mayo de 2024

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1

Pilipovich, V. A., V. L. Malevich, G. D. Ivlev y V. V. Zhidkov. "Dynamics of nanosecond laser annealing of silicon". Journal of Engineering Physics 48, n.º 2 (febrero de 1985): 228–33. http://dx.doi.org/10.1007/bf00871878.

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2

Casiez, L., N. Bernier, J. Chrétien, J. Richy, D. Rouchon, M. Bertrand, F. Mazen et al. "Recrystallization of thick implanted GeSn layers with nanosecond laser annealing". Journal of Applied Physics 131, n.º 15 (21 de abril de 2022): 153103. http://dx.doi.org/10.1063/5.0085107.

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We investigate the recrystallization of thick phosphorus-implanted GeSn layers using 308 nm Ultraviolet Nanosecond Laser Annealing (UV-NLA). We identify the optimal annealing conditions leading to the reconstruction of Ge0.92Sn0.08 crystal amorphized by dopant implantation. The fully recrystallized GeSn layers present specific structures with localized tin and strain variations. Above the non-amorphized and unmelted Ge0.92Sn0.08 seed layer, a first highly tensile strained GeSn sublayer is formed, with a tin gradient from 2.5% up to 10.5%. Closer to the surface, a second sublayer consists of tin-enriched vertical structures in a Ge0.93Sn0.07 matrix. Laser annealing enables us to reverse the strain of the GeSn layer. The initial GeSn presents a compressive strain of −0.10%, while the recrystallized Ge0.93Sn0.07 matrix is tensile strained at 0.39%. UV-NLA presents the advantages of (i) local annealing that recrystallizes amorphized GeSn layers after implantation without excessive tin segregation and (ii) reversing the strain of epitaxial GeSn layers from compressive to tensile. Our results open up promising perspectives for the integration of GeSn mid-IR photonic devices.

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3

Larrey, Vincent, Arthur Arribehaute, Brendon Caulfield, Pablo Acosta Alba, Christophe Morales, Paul Noël, Mathieu Opprecht, Frank Fournel, Didier Landru y Francois Rieutord. "Nanosecond Laser Irradiation for Interface Bonding Characterization". ECS Meeting Abstracts MA2023-02, n.º 33 (22 de diciembre de 2023): 1589. http://dx.doi.org/10.1149/ma2023-02331589mtgabs.

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Hydrophilic direct bonding is nowadays widely used in microelectronics for SOI substrate fabrication and 3D integration. Trapped water at the bonding interface plays a key role in the adhesion and adherence mechanisms [1]. Previous studies also reported that water could penetrate the bonding interface. This may modify the radial inhomogeneity of water [2]. However, this reported technique requires specific Silicon-to-Silicon bonding, lacks precision and needs additional characterizations (XRR, FTIR) to quantify the amount of trapped water at the bonding interface. In this work, we present an original methodology that can both accurately characterize and quantify water imbibition. Pulsed nanosecond laser annealing enables to reach extremely high temperatures, above the silicon melting point (1414°C), for very short durations (from a few tens of ns to a few hundred ns). These annealing conditions result in silicon surface melt. The beginning of melting is heterogeneous and leads to a particular surface topology with the formation of molten islands during laser annealing [3]. Recrystallization of these molten islands results in a localized increase of roughness (see fig. 1a). This roughness can exceed the direct bonding critical roughness. Non-bonded areas, i.e. bonding defects, can then be intentionally and precisely placed at the direct bonding interface. In a first step, bonding defects were thus formed along a wafer diameter with a 2 mm pitch. Then, using high-resolution acoustic microscopy, the bonding defects radii evolution was measured over time after direct bonding and without annealing (see fig. 1b). A progressive growth of defect radii was evidenced when getting closer and closer to the wafer edge. An additional water amount coming from the clean room atmosphere resulted in silicon oxidation at room temperature and di-hydrogen generation. Di-hydrogen was then trapped by bonding defects. In other words, bonding defects acted as humidity sensors. We could then record the penetration length and plot it as a function of the square root of time (fig. 1c). The penetration rate is the equivalent of a diffusion coefficient that could be calculated for both Silicon-to-Silicon and Silicon-to-Oxide bonding. We noted a very good agreement with Tedjini’s results for Silicon-to-Silicon bonding [2]. Meanwhile the calculated diffusion coefficient for Silicon-to-Oxide bonding was surprisingly about twice higher. Second, a bonding defect network with the same 2 mm pitch in both X and Y direction was created. After direct bonding, various duration 500°C temperature anneals were performed. The defects radii evolution was once again measured. As it increased over time, we could write the Griffith equilibrium between elastic (due to defect pressure) and surface (γ) energies. Describing defects as circular blisters, the amount of di-hydrogen trapped molecules could then be calculated. Plotting this number of H2 molecules, N, as a function of the annealing time (fig. 1d), we observe that a plateau was reached, meaning that all the di-hydrogen produced in the network was collected in the bonding defects. The water amount responsible for this di-hydrogen generation could then be evaluated and compared to data from other measurements. REFERENCES [1] F. Fournel, C. Martin-Cocher, D. Radisson, V. Larrey, E. Beche, C. Morales, P. A. Delean, F. Rieutord, and H. Moriceau, “Water Stress Corrosion in Bonded Structures”, ECS Journal of Solid State Science and Technology, 4 (5) P124-P130 (2015) [2] Tedjini M, Fournel F, Moriceau H, Larrey V, Landru D, Kononchuk O, et al. Interface water diffusion in silicon direct bonding. Appl Phys Lett. 12 sept 2016;109(11):111603. [3] L. Dagault, S. Kerdilès, P. Acosta Alba, J.-M. Hartmann, J.-P. Barnes, P. Gergaud, E. Scheid, and F. Cristiano, Investigation of Recrystallization and Stress Relaxation in Nanosecond Laser Annealed Si1−xGex/Si Epilayers, Appl. Surf. Sci. 527, 146752 (2020). Figure 1

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4

Zhvavyi, S. P. y O. L. Sadovskaya. "Nanosecond Laser Annealing of Implanted Silicon: Simulation of Dynamics". Physica Status Solidi (a) 112, n.º 1 (16 de marzo de 1989): K19—K22. http://dx.doi.org/10.1002/pssa.2211120166.

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5

Gerlinger, Kathinka, Bastian Pfau, Martin Hennecke, Lisa-Marie Kern, Ingo Will, Tino Noll, Markus Weigand et al. "Pump–probe x-ray microscopy of photo-induced magnetization dynamics at MHz repetition rates". Structural Dynamics 10, n.º 2 (marzo de 2023): 024301. http://dx.doi.org/10.1063/4.0000167.

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We present time-resolved scanning x-ray microscopy measurements with picosecond photo-excitation via a tailored infrared pump laser at a scanning transmission x-ray microscope. Specifically, we image the laser-induced demagnetization and remagnetization of thin ferrimagnetic GdFe films proceeding on a few nanoseconds timescale. Controlling the heat load on the sample via additional reflector and heatsink layers allows us to conduct destruction-free measurements at a repetition rate of 50 MHz. Near-field enhancement of the photo-excitation and controlled annealing effects lead to laterally heterogeneous magnetization dynamics which we trace with 30 nm spatial resolution. Our work opens new opportunities to study photo-induced dynamics on the nanometer scale, with access to picosecond to nanosecond time scales, which is of technological relevance, especially in the field of magnetism.

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6

Park, Sang Yeon, Younggon Choi, Yong Hyeok Seo, Hojun Kim, Dong Hyun Lee, Phuoc Loc Truong, Yongmin Jeon et al. "355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors". Micromachines 15, n.º 1 (5 de enero de 2024): 103. http://dx.doi.org/10.3390/mi15010103.

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Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various laser powers. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser powers ranging from 54 to 120 mW. The energy band gap and work function of a-IGZO extracted from the transmittance and ultraviolet photoelectron spectroscopy (UPS) measurement data confirm that different energy band structures for the ITO electrode/a-IGZO channel were established depending on the laser annealing conditions. Based on these observations, the electron injection mechanism from ITO electrodes to a-IGZO channels was analyzed. The results show that the selective laser annealing process can improve the electrical performance of the a-IGZO TFTs without any thermal damage to the substrate.

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7

Alloyeau, Damien, Christian Ricolleau, Cyril Langlois, Yann Le Bouar y Annick Loiseau. "Flash laser annealing for controlling size and shape of magnetic alloy nanoparticles". Beilstein Journal of Nanotechnology 1 (22 de noviembre de 2010): 55–59. http://dx.doi.org/10.3762/bjnano.1.7.

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We propose an original route to prepare magnetic alloy nanoparticles with uniform size and shape by using nanosecond annealing under pulsed laser irradiation. As demonstrated here on CoPt nanoparticles, flash laser annealing gives an unprecedented opportunity to control the size and the shape of bimetallic nanoparticles without changing their composition. The mechanisms involved in the complete reshaping of the nanoparticle thin films are discussed and it is also shown that order-disorder phase transformations occur under laser irradiation. This technique is then very interesting for magnetic alloy nanoparticles studies and applications because it opens up a new way to fabricate size-controlled spherical nanoparticles with narrow size dispersion.

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8

Coelho, João M. P., Catarina Silva, Andreia Ruivo y António Pires de Matos. "Infrared Nanosecond Laser Radiation in the Creation of Gold and Copper Nanoparticles". Materials Science Forum 730-732 (noviembre de 2012): 915–19. http://dx.doi.org/10.4028/www.scientific.net/msf.730-732.915.

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Metal nanoparticles inside glass present useful properties to photonic applications and have been object of several research works. In particular, laser beams have shown their potential in its creation and both ultraviolet beams with nanosecond pulses, and near-infrared beams with femtosecond pulses, have been used. In this paper, the authors add new possibilities by experimentally demonstrating that it is possible to achieve the same results by using near-infrared laser beams and nanosecond pulses. Copper and gold nanoparticles are created in silica-doped glass using nanosecond laser pulses in the near-infrared. Recorded absorption spectra of the glass samples before, and after laser irradiation and further annealing allowed measuring absorption peaks located at 537 nm for copper and 563 nm for gold, which are in accordance with the expected values. Based on Mie theory and using the full-width half maximum for those peaks, the average particle radii of the embedded nanoparticles was estimated to be about 7 nm for copper and 3 nm for gold nanoparticles, respectively.

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9

Deng, Ying, Anthony Pelton y R. A. Mayanovic. "Comparison of Vanadium Oxide Thin Films Prepared Using Femtosecond and Nanosecond Pulsed Laser Deposition". MRS Advances 1, n.º 39 (2016): 2737–42. http://dx.doi.org/10.1557/adv.2016.311.

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ABSTRACTPulsed laser deposition (PLD) is a technique which utilizes a high energy pulsed laser ablation of targets to deposit thin films on substrates in a vacuum chamber. The high-intensity laser pulses create a plasma plume from the target material which is projected towards the substrate whereupon it condenses to deposit a thin film. Here we investigate the properties of vanadium oxide thin films prepared utilizing two variations of the pulsed laser deposition (PLD) technique: femtosecond PLD and nanosecond PLD. Femtosecond PLD (f-PLD) has a significantly higher peak intensity and shorter duration laser pulse compared to that of the excimer-based nanosecond PLD (n-PLD). Experiments have been conducted on the growth of thin films prepared from V2O5 targets on glass substrates using f-PLD and n-PLD. Characterization using SEM, XRD and Raman spectroscopy shows that the f-PLD films have significantly rougher texture prior to annealing and exhibit with an amorphous nano-crystalline character whereas the thin films grown using n-PLD are much smoother and highly predominantly amorphous. The surface morphology, structural, vibrational, and chemical- and electronic-state elemental properties of the vanadium oxide thin films, both prior to and after annealing to 450 °C, will be discussed.

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10

de Silva, Milantha, Seiji Ishikawa, Takamaro Kikkawa y Shinichiro Kuroki. "Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing". Materials Science Forum 858 (mayo de 2016): 549–52. http://dx.doi.org/10.4028/www.scientific.net/msf.858.549.

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Non-equilibrium laser silicidations for low-resistance ohmic contact to 4H-SiC C-face with carbon-interstitial type metal, Nb was demonstrated. In a conventional nickel silicide (NiSi) electrode on SiC, a carbon agglomeration at the silicide/SiC interface occurs, and constant resistance between NiSi and SiC substrate becomes larger. For suppressing the carbon agglomeration, in this research, nanoseconds non-equilibrium laser annealing was introduced, and also carbon-interstitial type metal Nb to form metal carbides was introduced. Ni/Nb/SiC multilayer contact and NbNi mixed contact were formed on C-face side of 4H-SiC wafers. Electrical contact properties were investigated after 45 nanoseconds pulse laser annealing in N2 ambient. As the result, at the NbNi mixed contact, specific contact resistance of 2.4×10-4 Ωcm2 was realized.

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11

Acosta Alba, Pablo, Joris Aubin, Sylvain Perrot, Fulvio Mazzamuto, Adeline Grenier y Sébastien Kerdilès. "Solid phase recrystallization induced by multi-pulse nanosecond laser annealing". Applied Surface Science Advances 3 (marzo de 2021): 100053. http://dx.doi.org/10.1016/j.apsadv.2020.100053.

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12

Bhaumik, Anagh y Jagdish Narayan. "Nano-to-micro diamond formation by nanosecond pulsed laser annealing". Journal of Applied Physics 126, n.º 12 (28 de septiembre de 2019): 125307. http://dx.doi.org/10.1063/1.5118890.

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13

Mariño, Mariana, Philippe Breuil, Mathilde Rieu, Damien Jamon, Jean-Michel Rampnoux, Jean-Paul Viricelle y Florence Garrelie. "Simulation of nanosecond IR laser annealing of cerium gadolinium oxide". Journal of the European Ceramic Society 38, n.º 11 (septiembre de 2018): 3875–80. http://dx.doi.org/10.1016/j.jeurceramsoc.2018.04.035.

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14

Kovalenko, A. F. "Annealing of Glassy and Ceramic Materials by Nanosecond Laser Pulses". Glass and Ceramics 75, n.º 5-6 (septiembre de 2018): 242–45. http://dx.doi.org/10.1007/s10717-018-0064-z.

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15

Pyo, Jeongsang, Hyun Yeol Ryu, Jinhong Park, Minbaek Lee y Han-Youl Ryu. "Laser-Power Dependence of Poly-Silicon Crystallization Using 355-nm Nanosecond Laser Annealing". Journal of the Korean Physical Society 76, n.º 12 (junio de 2020): 1116–20. http://dx.doi.org/10.3938/jkps.76.1116.

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16

Levytskyi, S. M. "MECHANISMS OF INDIUM MASS TRANSFER IN Cd(Zn)Te UNDER THE ACTION OF NANOSECOND LASER PULSES". Optoelektronìka ta napìvprovìdnikova tehnìka 58 (21 de diciembre de 2023): 178–86. http://dx.doi.org/10.15407/iopt.2023.58.178.

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The processes of heating, melting and ablation during nanosecond laser irradiation of metal film (In) / CdTe structures and CdZnTe solid solutions are considered. Time and coordinate (in depth) temperature profiles during nanosecond laser irradiation of the system the film In/CdTe were calculated. Melting thresholds of indium and CdTe in the In/CdTe film system have been established. The profile of the distribution of indium atoms in cadmium telluride after a single laser irradiation of the In/CdTe structure, accompanied by the formation of an inversion layer (n-type), was obtained and theoretically described; a peak at a depth of 6 nm was detected. The mass transfer coefficients of indium in CdTe in different regions were determined during nanosecond laser irradiation of the In/CdTe structure with a thickness of the In film of 30 nm on the metal side at Epad = 100 mJ/cm2. It was established that the mass transfer coefficient of In atoms in CdTe during nanosecond laser irradiation of the In/CdTe film structure depends on the distance from the CdTe surface and increases, which is associated with a rapid change over time in the inhomogeneous deformation of the crystal lattice in the process of indium diffusion. The obtained value of the coefficient of laser-induced mass transfer of In in CdTe by an order of magnitude is much higher than the diffusion coefficients of impurities under normal annealing conditions with the diffusion method of impurity introduction and is commensurate with the self-diffusion coefficient in a number of liquid metals.

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17

Ruffino, F., L. Romano, E. Carria, M. Miritello, M. G. Grimaldi, V. Privitera y F. Marabelli. "A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping". Journal of Nanotechnology 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/635705.

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The exploitation of Si nanostructures for electronic and optoelectronic devices depends on their electronic doping. We investigate a methodology for As doping of Si nanostructures taking advantages of ion beam implantation and nanosecond laser irradiation melting dynamics. We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO2/Si/SiO2multilayer and its spatial redistribution after annealing processes. As accumulation at the Si/SiO2interfaces was observed by Rutherford backscattering spectrometry in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO2/Si interfaces. A concentration of 1014 traps/cm2has been evaluated. This result opens perspectives for As doping of Si nanoclusters embedded in SiO2since a Si nanocluster of radius 1 nm embedded in SiO2should trap 13 As atoms at the interface. In order to promote the As incorporation in the nanoclusters for an effective doping, an approach based on ion implantation and nanosecond laser irradiation was investigated. Si nanoclusters were produced in SiO2layer. After As ion implantation and nanosecond laser irradiation, spectroscopic ellipsometry measurements show nanoclusters optical properties consistent with their effective doping.

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18

Nikov, Ru, Ro Nikov, N. Nedyalkov, A. Dikovska y K. Grochowska. "Laser annealing of bimetal porous structures produced by PLD in open air". Journal of Physics: Conference Series 2240, n.º 1 (1 de marzo de 2022): 012045. http://dx.doi.org/10.1088/1742-6596/2240/1/012045.

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Abstract This work presents experimental results on laser annealing of bimetal structures produced by pulsed laser deposition in air at atmosphere pressure. The initial structures are deposited in open air by laser ablation of a rotating target consisting of two sections – Au and Ag. The ablation process is carried out by nanosecond pulses delivered by a Nd:YAG laser system emitting the wavelength of 355 nm. In open air, the laser ablation results in the formation of nanoparticles (NPs) and NP aggregates; during a prolonged deposition, these grow on the substrate into a 3D porous structure. The as-deposited structures are then annealed by laser pulses using the same laser system. The morphology of the annealed samples is studied in relation to the laser processing by varying the laser fluence and the number of the laser pulses. It is found that under certain conditions, the laser annealing leads to the formation of a 2D array of bimetal NPs on the substrate. The optical response of such structures composed by noble metals (such as Au and Ag) or their alloys is associated with a strong absorption in the visible spectral range known as surface plasmon resonance. Special attention is paid to the influence of the annealing parameters on the optical properties of the samples prepared.

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19

Eliceiri, Matthew, Yoonsoo Rho, Runxuan Li y Costas P. Grigoropoulos. "Pulsed laser induced atomic layer etching of silicon". Journal of Vacuum Science & Technology A 41, n.º 2 (marzo de 2023): 022602. http://dx.doi.org/10.1116/6.0002399.

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We demonstrate the laser mediated atomic layer etching (ALEt) of silicon. Using a nanosecond pulsed 266 nm laser focused loosely over and in a parallel configuration to the surface of the silicon, we dissociate Cl2 gas to induce chlorination. Then, we use pulsed picosecond irradiation to remove the chlorinated layer. Subsequently, we perform continuous wave (CW) laser annealing to eliminate amorphization caused by the picosecond laser etching. Based on atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), we observed strong evidence of chlorination and digital etching at 0.85 nm etching per cycle with good uniformity.

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20

Nedyalkov, Nikolay, Mihaela Koleva, Nadya Stankova, Rosen Nikov, Mitsuhiro Terakawa, Yasutaka Nakajima, Lyubomir Aleksandrov y Reni Iordanova. "Laser-assisted fabrication of gold nanoparticle-composed structures embedded in borosilicate glass". Beilstein Journal of Nanotechnology 8 (21 de noviembre de 2017): 2454–63. http://dx.doi.org/10.3762/bjnano.8.244.

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We present results on laser-assisted formation of two- and three-dimensional structures comprised of gold nanoparticles in glass. The sample material was gold-ion-doped borosilicate glass prepared by conventional melt quenching. The nanoparticle growth technique consisted of two steps – laser-induced defect formation and annealing. The first step was realized by irradiating the glass by nanosecond and femtosecond laser pulses over a wide range of fluences and number of applied pulses. The irradiation by nanosecond laser pulses (emitted by a Nd:YAG laser system) induced defect formation, expressed by brown coloration of the glass sample, only at a wavelength of 266 nm. At 355, 532 and 1064 nm, no coloration of the sample was observed. The femtosecond laser irradiation at 800 nm also induced defects, again observed as brown coloration. The absorbance spectra indicated that this coloration was related to the formation of oxygen deficiency defects. After annealing, the color of the irradiated areas changed to pink, with a corresponding well-defined peak in the absorbance spectrum. We relate this effect to the formation of gold nanoparticles with optical properties defined by plasmon excitation. Their presence was confirmed by high-resolution TEM analysis. No nanoparticle formation was observed in the samples irradiated by nanosecond pulses at 355, 532 and 1064 nm. The optical properties of the irradiated areas were found to depend on the laser processing parameters; these properties were studied based on Mie theory, which was also used to correlate the experimental optical spectra and the characteristics of the nanoparticles formed. We also discuss the influence of the processing conditions on the characteristics of the particles formed and the mechanism of their formation and demonstrate the fabrication of structures composed of nanoparticles inside the glass sample. This technique can be used for the preparation of 3D nanoparticle systems embedded in transparent materials with potential applications in the design of new optical components, such as metamaterials and in plasmonics.

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21

Bugaev, Kirill O., Anastasia A. Zelenina y Vladimir A. Volodin. "Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films". International Journal of Spectroscopy 2012 (2 de octubre de 2012): 1–5. http://dx.doi.org/10.1155/2012/281851.

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Vibrational properties of hydrogenated silicon-rich nitride () of various stoichiometry () and hydrogenated amorphous silicon () films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

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22

Frauenrath, Marvin, Pablo Acosta Alba, Anne-Marie Papon y Jean-Michel Hartmann. "Nanosecond Laser Annealing of In-Situ Boron-Doped Ge Layers for Dopant Activation". ECS Transactions 109, n.º 4 (30 de septiembre de 2022): 303–16. http://dx.doi.org/10.1149/10904.0303ecst.

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Low contact resistances are required to continue the miniaturization of CMOS devices and improve the performances of group IV semiconductors’ photodiodes and light emitting devices. In this study, we tried to enhance the electrical activation in in-situ boron-doped germanium by nanosecond laser annealing (NLA), an ultrafast, non-equilibrium process. Similar annealing regimes than that evidenced on SiGe thin layers were seen. Surface structures with shapes and orientations comparable to that after SiGe NLA were found in the surface melt regime. When the entire Ge:B layer was melted, we obtained a flat surface with a root mean square roughness of 1.51 nm. Laser annealing resulted in a redistribution of B, with the formation of electrically inactive clusters that did not contribute to strain. Accordingly, the sheet resistance increased by 70%, from 39.82 Ω/□ up to 68.62 Ω/□, when the layer was melted. This corresponded to an electrically active carrier loss of around 50%, from 8.1x1020 cm-3 down to 3.8x1020cm-3. Even multiple pulses with various energy densities at the same position were not able to improve electrical activation. However, there was some slight improvements of the sheet resistance in the sub melt regime, which needs to be confirmed in future experiments.

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23

Klinger, D., E. Łusakowska y D. Żymierska. "Nano-structure formed by nanosecond laser annealing on amorphous Si surface". Materials Science in Semiconductor Processing 9, n.º 1-3 (febrero de 2006): 323–26. http://dx.doi.org/10.1016/j.mssp.2006.01.027.

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24

Zhou, Yigang, Jiantao Zhou, Zhiqiang Tian, Fang Dong, Sheng Liu y Jiangang Wang. "Improving the crystal quality of AlN films by nanosecond laser annealing". Journal of Manufacturing Processes 84 (diciembre de 2022): 1519–25. http://dx.doi.org/10.1016/j.jmapro.2022.11.009.

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25

Frauenrath, M., P. Acosta Alba, O. Concepción, J. H. Bae, N. Gauthier, E. Nolot, M. Veillerot, N. Bernier, D. Buca y J. M. Hartmann. "Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content". Materials Science in Semiconductor Processing 163 (agosto de 2023): 107549. http://dx.doi.org/10.1016/j.mssp.2023.107549.

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26

Ntemogiannis, Dimitrios, Panagiotis Floropoulos, Vagelis Karoutsos, Spyridon Grammatikopoulos, Panagiotis Poulopoulos y Dimitris Alexandropoulos. "Plasmonic Nanostructuring by Means of Industrial-Friendly Laser Techniques". Photonics 10, n.º 4 (30 de marzo de 2023): 384. http://dx.doi.org/10.3390/photonics10040384.

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The continuously growing demand for functional plasmonic devices or systems urges the implementation of economical and accelerated nanostructuring techniques. Laser annealing represents a promising approach to address this challenge, given its widespread usage in industry and research, as well as its unique advantages. This study proposes a scalable, rapid, versatile, and cost-efficient method to grow self-assembled nanostructures on metallic ultrathin films and multilayers, with high precision and patterning freedom. By employing industrial-grade equipment, specifically a 1070 nm nanosecond fiber laser and magnetron sputtering system, we directly grew self-assembled nanoparticles on Ag ultrathin films and AgPd multilayers deposited on Corning glass, via laser annealing at ambient conditions. The self-assembled nanoparticles were formed in designated areas by varying several laser parameters and exhibited intense localized surface plasmon resonances. Optical and structural characterization were realized via UV–Vis spectroscopy and atomic force microscopy, respectively. The plasmonic characteristics were found to depend on the initial film thickness and laser annealing parameters. Laser-treated films exhibited remarkable plasmonic behavior, demonstrating that this method does not lack nanostructuring quality while offering scalability and practicality. Further optimization of the laser settings can refine the process and result in an even faster, cheaper, and more qualitative nanostructuring method.

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27

Silva, Catarina, João M. P. Coelho, Andreia Ruivo, Maria Luísa Botelho y António Pires de Matos. "Nanosecond Near-Infrared Laser Discoloration of Gamma Irradiated Silicate Glasses". Materials Science Forum 730-732 (noviembre de 2012): 123–28. http://dx.doi.org/10.4028/www.scientific.net/msf.730-732.123.

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Due to its non-crystalline, amorphous structure, glass is particularly susceptible to radiation-induced coloration/discoloration. Oxide glasses reveal a variety of colors depending upon their composition when exposed to high energy radiations such as gamma and X-rays, and the colors induced have been explained in terms of the formation of color centers. These effects can be reversed by heating or upon exposure to light at wavelengths corresponding to the absorption region of the color centers, a process known as discoloration. Laser can be an efficient process for accomplish this in a localized manner. The aim of this work was to study local discoloration of gamma radiation exposed silicate glasses by application of a nanosecond pulses infrared laser beam. Experimental results validated a numerical model and proved the viability of local laser discoloration of gamma ray irradiated silicate glasses. Although there has been much work focusing the creation and destruction of color centers in glasses, to the best of our knowledge, the application of infrared laser radiation in the local annealing of gamma irradiated glasses was for the first time explored.

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28

Володин, В. А., Г. К. Кривякин, Г. Д. Ивлев, С. Л. Прокопьев, С. В. Гусакова y А. А. Попов. "Кристаллизация плeнок аморфного германия и многослойных структур a-Ge/a-Si под действием наносекундного лазерного излучения". Физика и техника полупроводников 53, n.º 3 (2019): 423. http://dx.doi.org/10.21883/ftp.2019.03.47298.8997.

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AbstractThe processes of the crystallization of amorphous germanium films and multilayer germanium/silicon structures upon exposure to nanosecond (70 ns) ruby laser radiation (λ = 694 nm) are studied. The samples are grown on silicon and glassy substrates by plasma-enhanced chemical vapor deposition. Pulsed laser annealing of the samples is conducted in the range of pulse energy densities E _ p from 0.07 to 0.8 J cm^–2. The structure of the films after annealing is determined by analyzing the scanning electron microscopy data and Raman spectra. It is established that, after annealing, the films are completely crystallized and, in this case, contain regions of coarse crystalline grains (>100 nm), whose fraction increases, as E _ p is increased, and reaches 40% of the area. From analysis of the position of the Raman peaks, it is conceived that the crystalline grains, whose dimensions exceed 100 nm, either contain structural defects or stretching strains. The correlation length of optical vibrations is determined from the phonon confinement model and found to increase from 5 to 8 nm, as E _ p is increased. Pulsed laser annealing of multilayer Ge(10 nm)/Si(5 nm) structures induces partial intermixing of the layers with the formation of Ge–Si alloys.

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29

Daubriac, R., P. Acosta Alba, C. Marcenat, S. Lequien, T. D. Vethaak, F. Nemouchi, F. Lefloch y S. Kerdilès. "Superconducting Polycrystalline Silicon Layer Obtained by Boron Implantation and Nanosecond Laser Annealing". ECS Journal of Solid State Science and Technology 10, n.º 1 (1 de enero de 2021): 014004. http://dx.doi.org/10.1149/2162-8777/abdc41.

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30

Kerdilès, Sébastien, Pablo Acosta-Alba, Anne-Sophie Royet, Jessica Lassarre, Cédric Perrot, François Aussenac, Laurent Brunet y Claire Fenouillet-Beranger. "Ultraviolet Nanosecond Laser Annealing for Low Temperature 3D-Sequential Integration Gate Stack". ECS Transactions 93, n.º 1 (22 de octubre de 2019): 19–22. http://dx.doi.org/10.1149/09301.0019ecst.

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31

Gupta, Siddharth, Ritesh Sachan, Anagh Bhaumik y Jagdish Narayan. "Enhanced mechanical properties of Q-carbon nanocomposites by nanosecond pulsed laser annealing". Nanotechnology 29, n.º 45 (11 de septiembre de 2018): 45LT02. http://dx.doi.org/10.1088/1361-6528/aadd75.

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32

SADRNEZHAAD, S. K., NOUSHIN YASAVOL, MANSOUREH GANJALI y SOHRAB SANJABI. "Property change during nanosecond pulse laser annealing of amorphous NiTi thin film". Bulletin of Materials Science 35, n.º 3 (junio de 2012): 357–64. http://dx.doi.org/10.1007/s12034-012-0293-7.

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33

Ivlev, G. D. y V. L. Malevich. "On Phase Transitions Stimulated in Amorphized Silicon by Nanosecond Pulsed Laser Annealing". Physica Status Solidi (a) 103, n.º 2 (16 de octubre de 1987): K87—K91. http://dx.doi.org/10.1002/pssa.2211030244.

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34

Scandurra, Antonino, Francesco Ruffino y Maria Grazia Grimaldi. "Graphene Paper-Gold Nanostructured Electrodes Obtained by Laser Dewetting for High Sensitive Non-Enzymatic Glucose Sensing". Proceedings 15, n.º 1 (19 de junio de 2019): 1. http://dx.doi.org/10.3390/proceedings2019015001.

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Electrodes for non-enzymatic glucose sensing based on gold nanostructures onto graphene paper (GP-AuNPs) have been obtained inducing dewetting, by laser annealing, of 8 nm-thick Au layer deposited by sputtering. Molten-phase dewetting of gold layer, which produces the formation of spherical nanoparticles (AuNPs), was achieved by nanosecond laser annealing using a pulsed (12 ns) Nd: yttrium aluminum garnet YAG laser operating at 532 nm. The Surface of the electrode presents gold rich regions consisting of graphene nanoplatelets covered by spherical AuNPs. The sizes of AuNPs are in the range of 10–150 nm. Glucose was detected at a potential of 0.17 V vs SCE, which corresponds to the intense peak of two electrons oxidation. Highest sensitivity of 600 µA mM−1 cm−2 of glucose detection was obtained. The resulting sensitivity, detection limit and linear range of glucose detection are very promising since comparable to the actual state of art results for nanostructured gold electrodes which are, however, produced by complex multi-steps processes.

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35

CHEN, Cui-fen, Tie-min ZHANG, Zi-lin WANG, Lian-cong GAO, Chang SU, Ke WANG, An-chen WANG, Zhong-mei HUANG, Wei-qi HUANG y Hong-yan PENG. "Annealing effect on photoluminescence in silicon quantum dots prepared by nanosecond pulsed laser". Chinese Journal of Liquid Crystals and Displays 37, n.º 6 (2022): 703–8. http://dx.doi.org/10.37188/cjlcd.2022-0078.

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36

Bhaumik, Anagh y Jagdish Narayan. "Direct conversion of carbon nanofibers into diamond nanofibers using nanosecond pulsed laser annealing". Physical Chemistry Chemical Physics 21, n.º 13 (2019): 7208–19. http://dx.doi.org/10.1039/c9cp00063a.

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37

Klinger, D., J. Auleytner, D. Żymierska, B. Kozankiewicz, A. Barcz, L. Nowicki y A. Stonert. "Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing". European Physical Journal Applied Physics 27, n.º 1-3 (julio de 2004): 149–53. http://dx.doi.org/10.1051/epjap:2004133.

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38

Frauenrath, Marvin, Pablo Acosta Alba, Anne-Marie Papon y Jean-Michel Hartmann. "Nanosecond Laser Annealing of In-Situ Boron-Doped Ge Layers for Dopant Activation". ECS Meeting Abstracts MA2022-02, n.º 32 (9 de octubre de 2022): 1228. http://dx.doi.org/10.1149/ma2022-02321228mtgabs.

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Doped Ge can be employed in the sources and drains of Ge pMOS transistors 1 or as p-type films in Ge p-i-n Photo-Detectors (PDs) 2. If the growth temperature is low enough, they can even be used in GeSn PDs and Light Emitting Devices 3. Those Short and Mid Wavelength Infra-Red devices are rapidly gaining interest especially since the demonstration of electrically pumped lasing in GeSn at temperatures up to 100K by the University of Arkansas 4. The electrically active carrier concentration in binary Si:P was significantly increased thanks to a dissolution with nanosecond laser annealing (NLA) of P clusters 5. Ge:B alloys with metastable, ultra-high substitutional concentrations of B can also be obtained thanks to in-situ doping 6. However, electrical activation in such Ge:B binaries was limited by the formation of electrically inactive clusters 7. In this work, we evaluated whether or not they could be dissolved by NLA. The melt threshold shifted from 0.875 Jcm-2 to 0.85 Jcm-2 as the substitutional B concentration increased (from Time Resolved Reflectivity maps during Ge:B NLA; Figure 1 (a)). This was likely due to differences in terms of crystalline quality, surface roughness and/or B concentration itself. Figure 1 (b) shows normalized ω-2ϴ scans around the (0 0 4) X-Ray Diffraction order. The Ge:B peak did not significantly change below the melt threshold at 0.825 Jcm-2. Above it, the Ge:B peak became less and less intense and vanished at the full melt threshold (1.05 Jcm-2). NLA at even higher Energy Densities (ED, 2.00 Jcm-2) did not result in a recovery of the Ge:B peak. At the melt threshold, localized surface structures melted, as shown by Atomic Force Microscopy in Figure 1 (c) with a 30 nm z-scale. Surface structures were rectangular with sides along the <110> directions, as for the cross-hatch of the as-grown layer. The size of all surface structures was quite constant. Comparable surface structures were previously seen for SiGe 8. A High Resolution Transmission Electron Microscopy image of the Ge:B layer after NLA with an ED of 0.85 Jcm-2 is shown in Figure 1 (d). The Ge:B layer had a thickness of 33 nm, which was slightly lower than that of the as-grown layer, i.e. 39 nm. It might be that material agglomerated in the 12 nm high surface structures 8. Surface structures otherwise had a brighter contrast, which might be due to the accumulation of lighter B atoms in those surface structures. Well defined Fast Fourier Transform features outlined the somewhat good crystalline quality of NLA Ge:B. However, they were less bright than for a superior quality epitaxial layer. Laser annealing resulted in a redistribution of B, with the formation of electrically inactive clusters that did not contribute to strain. Accordingly, the sheet resistance increased by 70%, from 39.82 Ω/□ up to 68.62 Ω/□, when the layer melted. This corresponded to an electrically active carrier loss of around 50%, from 8.1x1020 cm-3 down to 3.8x1020cm-3, shown in Figure 1 (e). This behavior was independent of the as-grown substitutional B concentration. Even multiple shots with various energy densities at the same position, shown in Figure 1 (f), were not able to improve electrical activation. However, there was some slight improvements of the sheet resistance in the sub melt regime, which would need to be confirmed in future experiments. We have seen above that single shot NLA resulted in the formation of (i) surface structures becoming larger for high EDs and (ii) electrically inactive clusters not contributing to strain. With the use of multiple shots, surface structures merged and formed even larger surface structures. This led to more B redistribution and likely to the formation of more electrically inactive boron-interstitial clusters in the melt regime. In the sub melt regime, multi shot NLA might improve contact resistance. NLA in the melt regime therefore seemed not to be able to improve electrical activation in heavily in-situ boron-doped Ge layers as it did for heavily in-situ phosphorous doped Si. Vohra, A. et al. Jpn. J. Appl. Phys. 58, SBBA04 (2019). Osmond, J. et al. Appl. Phys. Lett. 95, 151116 (2009). Casiez, L. et al. IEEE Photonics Conference (IPC) 1–2 (IEEE, 2020). Zhou, Y. et al. Optica 7, 924 (2020). Rosseel, E. et al. ECS Trans. 64, 977–987 (2014). Hartmann, J.-M. et al. ECS Trans. 98, 203–214 (2020). Porret, C. et al. Phys. Status Solidi A 217, 1900628 (2020). Dagault, L. et al. ECS J. Solid State Sci. Technol. 8, P202–P208 (2019). Figure 1

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39

Frechilla, Alejandro, Mari Napari, Nives Strkalj, Eduardo Barriuso, Kham Niang, Markus Hellenbrand, Pavel Strichovanec et al. "Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing". Applied Materials Today 36 (febrero de 2024): 102033. http://dx.doi.org/10.1016/j.apmt.2023.102033.

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40

Nemoto, Keisuke y Yasutaka Hanada. "Etching-Assisted Ablation of the UV-Transparent Fluoropolymer CYTOP Using Various Laser Pulse Widths and Subsequent Microfluidic Applications". Micromachines 9, n.º 12 (15 de diciembre de 2018): 662. http://dx.doi.org/10.3390/mi9120662.

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This work demonstrated the surface microfabrication of the UV-transparent fluoropolymer CYTOP (perfluoro 1-butenyl vinyl ether), by etching-assisted ablation using lasers with different pulse widths. In previous studies, we developed a technique for CYTOP microfluidic fabrication using laser ablation followed by etching and annealing. However, this technique was not suitable for some industrial applications due to the requirement for prolonged etching of the irradiated areas. The present work developed a faster etching-assisted ablation method in which the laser ablation of CYTOP took place in fluorinated etching solvent and investigated into the fabrication mechanism of ablated craters obtained from various pulse width lasers. The mechanism study revealed that the efficient CYTOP microfabrication can be achieved with a longer pulse width laser using this technique. Therefore, the rapid, high-quality surface microfabrication of CYTOP was demonstrated using a conventional nanosecond laser. Additionally, Microfluidic systems were produced on a CYTOP substrate via the new etching-assisted laser ablation process followed by annealing within 1 h, which is faster than the prior work of the microfluidic chip fabrication. Subsequently, CYTOP and polydimethylsiloxane substrates were bonded to create a 3D microfluidic chip that allowed for a clear microscopic image of the fluid boundary.

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41

Daubriac, Richard, Rémi Demoulin, Sebastien Kerdiles, Pablo Acosta Alba, Jean-Michel Hartmann, Jean-Paul Barnes, Pawel Michałowski et al. "Impact of Nanosecond Laser Annealing on the Electrical Properties of Highly Boron-Doped Ultrathin Strained Si_0.7Ge_0.3 Layers". ECS Meeting Abstracts MA2022-01, n.º 29 (7 de julio de 2022): 1279. http://dx.doi.org/10.1149/ma2022-01291279mtgabs.

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The CMOS scaling beyond 10 nm technology node requires high active dopant concentrations in source/drain modules to minimize contact resistance. Pulsed laser annealing has been targeted by chip manufacturers as a future option to enhance the activation level inside highly doped SiGe:B and Si:P regions, mostly used in PMOS and NMOS transistor fabrication, respectively. Indeed, this annealing process allows reaching high temperatures (above melt threshold), locally (~100nm below the surface) and with extremely fast temperature ramp rates (>109 °C/s), so that high doping levels have been demonstrated both in pure Si and Ge [1]. In a recent study, structural investigations allowed identifying the best conditions to obtain fully strained and defect-free undoped SiGe layers by liquid phase epitaxial regrowth (LPER) [2]. In this work, we report an analysis on the activation of boron dopants in similar layers. In-situ boron-doped 30 nm thick pseudomorphic Si0.7Ge0.3 layers were grown on p-type bulk Si (100) by CVD. Three different boron concentrations were incorporated inside these layers: 7.8x1019 (A), 1.4x1020 (B) and 2.3x1020 cm-3 (C). By combining the boron chemical profiles with the corresponding Hall effect measurements (Hall scattering factor: 0.35), it was possible to estimate the activation rate inside the as-grown strained SiGe layers and the impact of the possible inactive dopants on the transport properties. From the lowest to the highest boron chemical concentration, we found activation rates of ~100%, ~80% and ~60%, with no significant carrier mobility degradation, even in the sample with the highest fraction of inactive dopants. The SiGe layers were subsequently laser annealed in a SCREEN-LT3100 platform operating at 308 nm (XeCl laser) with a pulse duration around 160 ns. The laser energy densities (ED) ranged from 1.20 to 2.40 J/cm2 in order to investigate all the various annealing regimes. Results obtained using several characterization techniques were combined to determine the laser annealing regimes, quantify surface roughness and assess the layers’ composition, strain and crystalline quality. These results were compared to electrical measurements performed to analyse the evolution of the electrical parameters as a function of the laser anneal conditions, particularly the activation rate. For the lowly-doped and fully activated layer (A), the sheet resistance increases rapidly at the melt threshold (1.5 J/cm2, cf. Fig. 1, red curve), concomitantly with the appearance of a partial relaxation inside the layer (Fig. 2) and the formation of extended defects. The defects may induce a local dopant deactivation, while strain relaxation can result in a modification of the transport properties of the material (modified Hall scattering factor). Both phenomena can be therefore responsible for the observed increase of the sheet resistance. In contrast, for laser EDs allowing complete melt of the layer (i.e. beyond 2.0 J/cm2), the sheet resistance decreases with increasing ED and full activation is achieved (Fig. 3, red curve) together with strain recovery (Fig. 2) and no observable defects. For the highly-doped and partially activated layer (C), partial relaxation also occurs at the melt threshold (Fig. 2). However, thanks to the strain compensation effect of the small boron atoms, the relaxation level is lower compared to the lowly-doped sample and more quickly recovered when increasing the ED (no defects observed at 1.95 J/cm2, Fig. 4). In addition, the sheet resistance is found to continuously decrease as a function of the ED (Fig. 1, blue curve) independently of the strain state of the structure. This suggests that, in addition to the previously described phenomena, the initially inactive dopants are progressively incorporated into substitutional positions by LPER. Indeed, when full melt and strain recovery is achieved, a 100% dopant activation is also observed (Fig. 3, blue curve). Characterizations made on sample B suggest a similar behaviour to that of sample C. Finally, further results will be reported from additional experiments aiming at (i) better understanding the impact of strain relaxation on dopant activation and (ii) optimizing the laser annealing process to avoid relaxation. These experiments include the use of a shorter laser pulse for the annealing of the strained SiGe layers, as well as the comparison with results obtained from fully-relaxed boron-doped SiGe annealed under similar laser conditions. Acknowledgements: This work was supported by the European Union’s Horizon 2020 research and innovation program under grant agreement No. 871813 MUNDFAB. References: [1] F. Cristiano, A. La Magna, Laser annealing processes in semiconductor technology: Theory, modeling, and applications in nanoelectronics, Elsevier 2021 (9780128202555). [2] L. Dagault & al., Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers, ASS, Vol. 527, 146752 (10.1016/j.apsusc.2020.146752). Figure 1

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42

Safronov, Ivan S., Aleksandra A. Neplueva y Ivan V. Ushakov. "Mechanical Properties of Laser Treated Thin Sample of an Amorphous-Nanocrystalline Metallic Alloy Depending on the Initial Annealing Temperature". Defect and Diffusion Forum 410 (17 de agosto de 2021): 489–94. http://dx.doi.org/10.4028/www.scientific.net/ddf.410.489.

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The ability to control the mechanical properties of metal alloys is an urgent task in materials science. For formation of certain operational properties, in most cases, it is enough to treat the working surface of the product by laser radiation. Classical processing methods are ineffective in relation to multicomponent amorphous-nanocrystalline metallic alloys. This is due to their limited use. Usually, this treatment leads to the loss of unique properties the amorphous-nanocrystalline material. Increasing crack resistance and microhardness is not an easy problem. The structure of an amorphous nanocrystalline material can be destroyed under the action of laser processing. Laser nanosecond treatment, as result of a complex effect on the surface, slightly affects the structure of material. The treated material is characterized by increased microhardness and crack resistance, while at the same time such changes may be controlled.

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43

Tabata, Toshiyuki. "Nucleation and crystal growth in HfO2 thin films by UV nanosecond pulsed laser annealing". Applied Physics Express 13, n.º 1 (9 de diciembre de 2019): 015509. http://dx.doi.org/10.7567/1882-0786/ab5ce2.

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44

Kim, Jin-Hyun, Hyung-Min Ji, Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Sang-Woo Kim, Jong-Yeon Baek, Jiyoung Kim y Rino Choi. "Low-temperature dopant activation using nanosecond ultra-violet laser annealing for monolithic 3D integration". Thin Solid Films 735 (octubre de 2021): 138864. http://dx.doi.org/10.1016/j.tsf.2021.138864.

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45

Dagault, Lea, Pablo Acosta-Alba, Sébastien Kerdilès, Jean-Paul Barnes, Jean-Michel Hartmann, Patrice Gergaud, Than Tra Nguyen, Adeline Grenier, Joris Aubin y Fuccio Cristiano. "Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing". ECS Transactions 86, n.º 7 (20 de julio de 2018): 29–39. http://dx.doi.org/10.1149/08607.0029ecst.

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46

Nedyalkov, N., N. E. Stankova, M. E. Koleva, R. Nikov, M. Grozeva, E. Iordanova, G. Yankov, L. Aleksandrov, R. Iordanova y D. Karashanova. "Optical properties modification of gold doped glass induced by nanosecond laser radiation and annealing". Optical Materials 75 (enero de 2018): 646–53. http://dx.doi.org/10.1016/j.optmat.2017.10.032.

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47

Boneberg, J., J. Bischof y P. Leiderer. "Nanosecond time-resolved reflectivity determination of the melting of metals upon pulsed laser annealing". Optics Communications 174, n.º 1-4 (enero de 2000): 145–49. http://dx.doi.org/10.1016/s0030-4018(99)00660-4.

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48

Li, C. I., N. Breil, T. Y. Wen, S. Y. Liu, M. S. Hsieh, S. J. Yen, C. W. Chang et al. "p-Type MOSFET Contact Resistance Improvement by Conformal Plasma Doping and Nanosecond Laser Annealing". IEEE Electron Device Letters 40, n.º 2 (febrero de 2019): 307–9. http://dx.doi.org/10.1109/led.2019.2890950.

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49

Chun, Doo-Man, Chi-Vinh Ngo y Kyong-Min Lee. "Fast fabrication of superhydrophobic metallic surface using nanosecond laser texturing and low-temperature annealing". CIRP Annals 65, n.º 1 (2016): 519–22. http://dx.doi.org/10.1016/j.cirp.2016.04.019.

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50

Shin, Hyunsu, Minhyung Lee, Eunjung Ko, Hwa-yoen Ryu, Seran Park, Eunha Kim y Dae-Hong Ko. "Dopant Activation of In Situ Phosphorus‐Doped Silicon Using Multi‐Pulse Nanosecond Laser Annealing". physica status solidi (a) 217, n.º 12 (5 de marzo de 2020): 1900988. http://dx.doi.org/10.1002/pssa.201900988.

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