Bibliografías temáticas / Nanoelectronics

Literatura académica sobre el tema "Nanoelectronics"

Autor: Grafiati
Publicado: 4 de junio de 2021
Última modificación: 30 de julio de 2024

Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros

Elija tipo de fuente:

Índice

Consulte las listas temáticas de artículos, libros, tesis, actas de conferencias y otras fuentes académicas sobre el tema "Nanoelectronics".

Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.

También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.

Artículos de revistas sobre el tema "Nanoelectronics"

1

HULL, ROBERT, RICHARD MARTEL y J. M. XU. "NANOELECTRONICS: SOME CURRENT ASPECTS AND PROSPECTS". International Journal of High Speed Electronics and Systems 12, n.º 02 (junio de 2002): 353–64. http://dx.doi.org/10.1142/s0129156402001174.

Texto completo
Resumen
A brief summary is provided of selected current activities in the field of nanoelectronics, which is taken here to mean the fabrication and integration of active microelectronic components with feature dimensions of tens of nanometers or less. Particular emphasis is placed upon the classes of nanoelectronic devices that were discussed at the 2002 WOFE Conference.
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

He, Qianxi. "Characteristics and Improvement Methods of Carbon Nanodevices". Highlights in Science, Engineering and Technology 106 (16 de julio de 2024): 94–100. http://dx.doi.org/10.54097/8s3ra054.

Texto completo
Resumen
Whether the trend of increasing integration density of integrated circuits indicated by Moore's Law can continue to develop, especially now that feature sizes have entered the nanometer range, shrinking sizes face greater challenges. Since entering the "post-Moore" era, the development of carbon-based nanoelectronics has attracted attention. This paper explores the application of carbon-based nanomaterials in carbon-based nanoelectronic devices and integrated circuits. It introduces the structure, properties, and preparation methods of single-walled carbon nanotubes and graphene, demonstrating their importance to carbon-based nanoelectronic devices and integrated circuits. The synthesis methods of carbon nanotubes mainly include arc discharge method, laser ablation method, and chemical vapor deposition metho. Subsequently, it summarizes the advantages, applications, and challenges of carbon-based nanoelectronic devices. The applications of carbon-based nanoelectronic devices and integrated circuits include digital integrated circuits, optoelectronic integrated circuits, electrochemical sensors, carbon-based radio frequency devices, and smart integrated systems. Furthermore, starting from the preparation methods, improvement methods are summarized, focusing on chemical vapor deposition, to optimize carbon nanomaterials for application in carbon nanodevices. It elucidates the promising prospects of carbon-based nanoelectronics.
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Bate, R. T. "Nanoelectronics". Nanotechnology 1, n.º 1 (1 de julio de 1990): 1–7. http://dx.doi.org/10.1088/0957-4484/1/1/001.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Hartnagel, H. L., R. Richter y A. Grüb. "Nanoelectronics". Electronics & Communications Engineering Journal 3, n.º 3 (1991): 119. http://dx.doi.org/10.1049/ecej:19910020.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Cress, Cory. "Carbon Nanoelectronics". Electronics 3, n.º 1 (27 de enero de 2014): 22–25. http://dx.doi.org/10.3390/electronics3010022.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

Bandyopadhyay, S. y V. P. Roychowdhury. "Granular nanoelectronics". IEEE Potentials 15, n.º 2 (1996): 8–11. http://dx.doi.org/10.1109/45.489730.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Wolfgang, Porod y I. Csurgay Arpad. "Editorial: Nanoelectronics". IEE Proceedings - Circuits, Devices and Systems 151, n.º 5 (2004): 413. http://dx.doi.org/10.1049/ip-cds:20041170.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Vuill, Dominique. "Molecular Nanoelectronics". Proceedings of the IEEE 98, n.º 12 (diciembre de 2010): 2111–23. http://dx.doi.org/10.1109/jproc.2010.2063410.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Nyberg, Tobias, Fengling Zhang y Olle Inganäs. "Macromolecular nanoelectronics". Current Applied Physics 2, n.º 1 (febrero de 2002): 27–31. http://dx.doi.org/10.1016/s1567-1739(01)00104-3.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Gorbatsevich, A. A. y V. V. Kapaev. "Waveguide nanoelectronics". Russian Microelectronics 36, n.º 1 (febrero de 2007): 1–13. http://dx.doi.org/10.1134/s1063739707010015.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
Más fuentes

Tesis sobre el tema "Nanoelectronics"

1

McCaughan, Adam Nykoruk. "Superconducting thin film nanoelectronics". Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/101576.

Texto completo
Resumen
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 163-171).
Superconducting devices have found application in a diverse set of fields due to their unique properties which cannot be reproduced in normal materials. Although many of these devices rely on the properties of bulk superconductors, superconducting devices based on thin films are finding increasing application, especially in the realms of sensing and amplification. With recent advances in electron-beam lithography, superconducting thin films can be patterned into geometries with feature sizes at or below the characteristic length scales of the superconducting state. By patterning 2D geometries with features smaller than these characteristic length scales, we were able to use nanoscale phenomena which occur in thin superconducting films to create superconducting devices which performed useful tasks such as sensor amplification, logical processing, and fluxoid state sensing. In this thesis, I describe the development, characterization, and application of three novel superconducting nanoelectronic devices: the nTron, the yTron, and the current-controlled nanoSQUID. These devices derive their functionality from the exploitation of nanoscale superconducting effects such as kinetic inductance, electrothermal suppression, and current-crowding. Patterning these devices from superconducting thin-films has allowed them to be integrated monolithically with each other and other thin-film superconducting devices such as the superconducting nanowire single-photon detector.
by Adam Nykoruk McCaughan.
Ph. D.
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

Echtermeyer, Tim Joachim. "Graphene nanoelectronics and optoelectronics". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648171.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Kulmala, Tero Samuli. "Nanowires and graphene nanoelectronics". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608195.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Fasoli, Andrea. "Nanowires and nanoribbons nanoelectronics". Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608660.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Lombardo, Antonio. "Graphene nanoelectronics and optoelectronics". Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648601.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

Conrad, Brad Richard. "Interface effects on nanoelectronics". College Park, Md.: University of Maryland, 2009. http://hdl.handle.net/1903/9154.

Texto completo
Resumen
Thesis (Ph. D.) -- University of Maryland, College Park, 2009.
Thesis research directed by: Dept. of Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Spagocci, S. "Fault tolerance issues in nanoelectronics". Thesis, University College London (University of London), 2008. http://discovery.ucl.ac.uk/14227/.

Texto completo
Resumen
The astonishing success story of microelectronics cannot go on indefinitely. In fact, once devices reach the few-atom scale (nanoelectronics), transient quantum effects are expected to impair their behaviour. Fault tolerant techniques will then be required. The aim of this thesis is to investigate the problem of transient errors in nanoelectronic devices. Transient error rates for a selection of nanoelectronic gates, based upon quantum cellular automata and single electron devices, in which the electrostatic interaction between electrons is used to create Boolean circuits, are estimated. On the bases of such results, various fault tolerant solutions are proposed, for both logic and memory nanochips. As for logic chips, traditional techniques are found to be unsuitable. A new technique, in which the voting approach of triple modular redundancy (TMR) is extended by cascading TMR units composed of nanogate clusters, is proposed and generalised to other voting approaches. For memory chips, an error correcting code approach is found to be suitable. Various codes are considered and a lookup table approach is proposed for encoding and decoding. We are then able to give estimations for the redundancy level to be provided on nanochips, so as to make their mean time between failures acceptable. It is found that, for logic chips, space redundancies up to a few tens are required, if mean times between failures have to be of the order of a few years. Space redundancy can also be traded for time redundancy. As for memory chips, mean times between failures of the order of a few years are found to imply both space and time redundancies of the order of ten.
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Semple, James. "High-throughput large-area plastic nanoelectronics". Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/39573.

Texto completo
Resumen
Large-area electronics (LAE) manufacturing has been a key focus of both academic and industrial research, especially within the last decade. The growing interest is born out of the possibility of adding attractive properties (flexibility, light weight or minimal thickness) at low cost to well-established technologies, such as photovoltaics, displays, sensors or enabling the realisation of emerging technologies such as wearable devices and the Internet of Things. As such there has been great progress in the development of materials specifically designed to be employed in solution processed (plastic) electronics, including organic, transparent metal oxide and nanoscale semiconductors, as well as progress in the deposition methods of these materials using low-cost high-throughput printing techniques, such as gravure printing, inkjet printing, and roll-to-roll vacuum deposition. Meanwhile, industry innovation driven by Moore's law has pushed conventional silicon-based electronic components to the nanoscale. The processes developed for LAE must strive to reach these dimensions. Given that the complex and expensive patterning techniques employed by the semiconductor industry so far are not compatible with LAE, there is clearly a need to develop large-area high throughput nanofabrication techniques. This thesis presents progress in adhesion lithography (a-Lith), a nanogap electrode fabrication process that can be applied over large areas on arbitrary substrates. A-Lith is a self-alignment process based on the alteration of surface energies of a starting metal electrode which allows the removal of any overlap of a secondary metal electrode. Importantly, it is an inexpensive, scalable and high throughput technique, and, especially if combined with low temperature deposition of the active material, it is fundamentally compatible with large-area fabrication of nanoscale electronic devices on flexible (plastic) substrates. Herein, I present routes towards process optimisation with a focus on gap size reduction and yield maximisation. Asymmetric gaps with sizes below 10 nm and yields of > 90 % for hundreds of electrode pairs generated on a single substrate are demonstrated. These large width electrode nanogaps represent the highest aspect ratio nanogaps (up to 108) fabricated to date. As a next step, arrays of Schottky nanodiodes are fabricated by deposition of a suitable semiconductor from solution into the nanogap structures. Of principal interest is the wide bandgap transparent semiconductor, zinc oxide (ZnO). Lateral ZnO Schottky diodes show outstanding characteristics, with on-off ratios of up to 106 and forward current values up to 10 mA for obtained upon combining a-Lith with low-temperature solution processing. These unique devices are further investigated for application in rectifier circuits, and in particular for potential use in radio frequency identification (RFID) tag technology. The ZnO diodes are found to surpass the 13.56 MHz frequency bernchmark used in commercial applications and approach the ultra-high frequency (UHF) band (hundreds of megahertz), outperforming current state of the art printed diodes. Solution processed fullerene (C60) is also shown to approach the UHF band in this co-planar device configuration, highlighting the viability of a-Lith for enabling large-area flexible radio frequency nanoelectronics. Finally, resistive switching memory device arrays based on a-Lith patterned nanogap aluminium symmetric electrodes are demonstrated for the first time. These devices are based either on empty aluminium nanogap electrodes, or with the gap filled with a solution-processed semiconductor, the latter being ZnO, the semiconducting polymer poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) or carbon nanotube/polyfluorene blends. The switching mechanism, retention time and switching speed are investigated and compared with published data. The fabrication of arrays of these devices illustrates the potential of a-Lith as a simple technique for the realisation of large-area high-density memory applications.
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Hutchinson, G. D. "Superconducting nanoelectronics using controllable Josephson junctions". Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604859.

Texto completo
Resumen
This dissertation describes the fabrication, measurement and modelling for a micrometer sized direct-current superconducting quantum interference device (DC-SQID), which had its critical current controlled by a process of non-equilibrium phonon (hot-phonon) irradiation from a nanofabricated gated structure. The method of control was achieved via close proximity, normal-metal constrictions that injected hot-phonons on the Dayem bridge Josephson junctions in the DC-SQUID. A hot electron population created these hot-phonons in the control layer’s normal-metal constrictions when a bias current was applied whilst the device was immersed in liquid helium. This hot-phonon injection layer was produced from a multi-layer fabrication technique that allowed for the creation of an in-line structure; a structure fabrication through a reactive-ion etch process performed on a top-down, nano-lithographically defined constriction geometry. The controlled microSQUID device was created using an inner loop size less than a micrometer and contained two Dayem bridge Josephson junctions with a width and length of approximately 100 and 200 nanometres respectively, in a 50 nanometre thick niobium thin-film. The 70 nanometre thick chromium/titanium normal-metal constructions and the weak link Josephson junction were in thermal contact, but in electrical isolation, due to a 30 nanometre silicon dioxide dielectric layer. The device was measured at a temperature of 4.2 degrees Kelvin, and the manipulation of the critical current oscillations of the microSQUID was performed. The critical current control mechanism, utilised in this device, demonstrated a technique where the magnetic hysteresis was eliminated, and the thermal hysteresis in the current-voltage characteristics of the microSQUID was reduced. An observed characteristic of the controlled reduction of the critical current in this device, illustrated by the one-dimensional microSQUID model presented in this dissertation, was the change in the effective length of the Dayem bridge Josephson junctions. This manifested itself through the shortening of the Cooper pair coherence length in the niobium thin-film under the hot-photon irradiation. The experimental data presented in this dissertation, and its interpretation in relation to the microSQUID model, confirms that this technique, based on hot-phonon irradiation for controlling the critical current in Dayem bridge Josephson Junctions, is compatible with the Josephson effect. Therefore, my dissertation shows a feasible method for post-fabrication parameter control in superconducting circuits using Dayem bridge Josephson junctions.
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Tan, Yong-Tsong. "Nanoelectronics using polycrystalline and nanocrystalline silicon". Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621321.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
Más fuentes

Libros sobre el tema "Nanoelectronics"

1

Van de Voorde, Marcel, Robert Puers, Livio Baldi y Sebastiaan E. van Nooten, eds. Nanoelectronics. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

W, Pease R. Fabian, ed. Nanoelectronics. New York: Institute of Electrical and Electronics Engineers, 1991.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Murali, Raghu, ed. Graphene Nanoelectronics. Boston, MA: Springer US, 2012. http://dx.doi.org/10.1007/978-1-4614-0548-1.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Hussain, Muhammad Mustafa. Advanced Nanoelectronics. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2018. http://dx.doi.org/10.1002/9783527811861.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Khanna, Vinod Kumar. Integrated Nanoelectronics. New Delhi: Springer India, 2016. http://dx.doi.org/10.1007/978-81-322-3625-2.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

Raza, Hassan, ed. Graphene Nanoelectronics. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22984-8.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Dragoman, Mircea y Daniela Dragoman. 2D Nanoelectronics. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48437-2.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Ferry, David K., John R. Barker y Carlo Jacoboni, eds. Granular Nanoelectronics. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-3689-9.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Raza, Hassan. Nanoelectronics Fundamentals. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-32573-2.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

K, Ferry David, Barker John R, Jacoboni Carlo y North Atlantic Treaty Organization. Scientific Affairs Division., eds. Granular nanoelectronics. New York: Plenum Press, 1991.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
Más fuentes

Capítulos de libros sobre el tema "Nanoelectronics"

1

Raza, Hassan. "Nanoelectronics". En Undergraduate Lecture Notes in Physics, 53–61. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-11733-7_6.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

Kulkarni, Sulabha K. "Nanoelectronics". En Nanotechnology: Principles and Practices, 259–72. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-09171-6_10.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Beaumont, S. P. "Nanoelectronics". En Gallium Arsenide Technology in Europe, 364–86. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-78934-2_24.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Dwivedi, S. "Nanoelectronics". En Nanotechnology, 93–117. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003220350-6.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Gargini, Paolo A. "A Brief History of the Semiconductor Industry". En Nanoelectronics, 1–52. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch1.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

Gambacorti, Narciso. "Nanoanalysis". En Nanoelectronics, 245–64. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch10.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Mariani, Marcello y Nicolas Possémé. "Front-End Processes". En Nanoelectronics, 265–88. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch11.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Ronse, Kurt. "Lithography for Nanoelectronics". En Nanoelectronics, 289–316. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch12.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Oates, Anthony S. y K. P. Cheung. "Reliability of Nanoelectronic Devices". En Nanoelectronics, 317–30. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch13.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Macii, Enrico, Andrea Calimera, Alberto Macii y Massimo Poncino. "Logic Synthesis of CMOS Circuits and Beyond". En Nanoelectronics, 331–62. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch14.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.

Actas de conferencias sobre el tema "Nanoelectronics"

1

Prevenslik, Thomas. "Heat Transfer in Nanoelectronics by Quantum Mechanics". En ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ipack2013-73173.

Texto completo
Resumen
Today, the transient Fourier heat conduction equation is not considered valid for the derivation of temperatures from the dissipation of Joule heat in nanoelectronics because the dimension of the circuit element is comparable to the mean free path of phonon energy carriers. Instead, the Boltzmann transport equation (BTE) for ballistic transport based on the scattering of phonons within the element is thought to govern heat transfer. However, phonons respond at acoustic frequencies in times on the order of 10–100 ps, and therefore the BTE would not have meaning if the Joule heat is conserved by a faster mechanism. Unlike phonons with response times limited by acoustic frequencies, heat transfer in nanoelectronics based on QED induced heat transfer conserves Joule heat in times < 1 fs by the creation of EM radiation at optical frequencies. QED stands for quantum electrodynamics. In effect, QED heat transfer negates thermal conduction in nanoelectronics because Joule heat is conserved well before phonons respond. QED induced heat transfer finds basis in Planck’s QM given by the Einstein-Hopf relation in terms of temperature and EM confinement of the atom as a harmonic oscillator. QM stands for quantum mechanics and EM for electromagnetic. Like the Fourier equation, the BTE is based on classical physics allowing the atom in nanoelectronic circuit elements to have finite heat capacity, thereby conserving Joule heat by an increase in temperature. QM differs by requiring the heat capacity of the atom to vanish. Conservation of Joule heat therefore proceeds by QED inducing the creation of excitons (hole and electron pairs) inside the circuit element by the frequency up-conversion of Joule heat to the element’s TIR confinement frequency. TIR stands for total internal reflection. Under the electric field across the element, the excitons separate to produce a positive space charge of holes that reduce the electrical resistance or upon recombination are lost by the emission of EM radiation to the surroundings. TIR confinement of EM radiation is the natural consequence of the high surface to volume ratio of the nanoelectronic circuit elements that concentrates Joule heat almost entirely in their surface, the surfaces coinciding with the TIR mode shape of the QED radiation. TIR confinement is not permanent, present only during the absorption of Joule heat. Charge creation aside, QM requires nanoelectronics circuit elements to remain at ambient temperature while dissipating Joule heat by QED radiation to the surroundings. Hot spots do not occur provided the RI of the circuit element is greater than the substrate or surroundings. RI stands for refractive index. In this paper, QED radiation is illustrated with memristors, PC-RAM devices, and 1/ f noise in nanowires, the latter of interest as the advantage of QM in avoiding hot spots in nanoelectronics may be offset by the noise from the holes created in the circuit elements by QED induced radiation.
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

Skorek, Adam W., Anna Gryko-Nikitin y Joanicjusz Nazarko. "Genetic Algorithm for Nanoscale Electro-Thermal Optimization". En ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33827.

Texto completo
Resumen
In this paper, we are presenting a genetic algorithm adopted for electro-thermal optimization in nanoelectronics devices and systems. The model of nanoelectronic system is simplified. Each heat source will be approximated by a specific function. The presented optimization strategy is designated for any system containing a number N of nanoelectronic elements. Optimization for the overall structure of the system will be performed in conformity with the temperature minimization criteria in the chosen areas of the system. Regarding others non unexpected modifications of the optimization algorithm, we are using a modified complex objective function.
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

"Nanoelectronics". En 2021 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus). IEEE, 2021. http://dx.doi.org/10.1109/elconrus51938.2021.9396180.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

"Nanoelectronics". En 2017 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2017. http://dx.doi.org/10.1109/eiconrus.2017.7910823.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

"Nanoelectronics". En 2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2018. http://dx.doi.org/10.1109/eiconrus.2018.8317496.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

"Nanoelectronics". En 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2019. http://dx.doi.org/10.1109/eiconrus.2019.8656774.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

"Nanoelectronics". En 2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2020. http://dx.doi.org/10.1109/eiconrus49466.2020.9039244.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

"Nanoelectronics III". En 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305180.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

"Nanoelectronics I". En 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305168.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Chun-Yung Sung. "Graphene nanoelectronics". En 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378331.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.

Informes sobre el tema "Nanoelectronics"

1

Liu, Jie y Mark W. Grinstaff. DNA for the Assembly of Nanoelectronic Devices Biotechnology and Nanoelectronics. Fort Belvoir, VA: Defense Technical Information Center, abril de 2005. http://dx.doi.org/10.21236/ada433496.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

Lawrence R. Sita. Ferrocene-Based Nanoelectronics. Office of Scientific and Technical Information (OSTI), febrero de 2006. http://dx.doi.org/10.2172/876179.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Pan, Wei, Taisuke Ohta, Laura Butler Biedermann, Carlos Gutierrez, C. M. Nolen, Stephen Wayne Howell, Thomas Edwin Beechem Iii, Kevin F. McCarty y Anthony Joseph, III Ross. Enabling graphene nanoelectronics. Office of Scientific and Technical Information (OSTI), septiembre de 2011. http://dx.doi.org/10.2172/1029775.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Kiv, A., V. Soloviev y Yu Shunin. Economic problems of nanoelectronics. Брама-Україна, mayo de 2014. http://dx.doi.org/10.31812/0564/1281.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Knight, Stephen, Joaquin V. Martinez de Pinillos y Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. Gaithersburg, MD: National Institute of Standards and Technology, 2003. http://dx.doi.org/10.6028/nist.ir.7010.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

Knight, Stephen, Joaquin V. Martinez de Pinillos y Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. Gaithersburg, MD: National Institute of Standards and Technology, 2004. http://dx.doi.org/10.6028/nist.ir.7121.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Knight, Stephen, Joaquin V. Martinez de Pinillos y Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. Gaithersburg, MD: National Institute of Standards and Technology, 2006. http://dx.doi.org/10.6028/nist.ir.7321.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Knight, Stephen, Joaquin V. Martinez de Pinillos y Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. Gaithersburg, MD: National Institute of Standards and Technology, 2007. http://dx.doi.org/10.6028/nist.ir.7426.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Knight, Stephen, Joaquin V. Martinez de Pinillos, Yaw S. Obeng y Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. Gaithersburg, MD: National Institute of Standards and Technology, 2008. http://dx.doi.org/10.6028/nist.ir.7513.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Martinez de Pinillos, Joaquin V., Yaw S. Obeng y Michele Buckley. Semiconductor Microelectronics and Nanoelectronics Programs. Gaithersburg, MD: National Institute of Standards and Technology, 2009. http://dx.doi.org/10.6028/nist.ir.7604.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
También puede estar interesado en las bibliografías ampliadas sobre el tema "Nanoelectronics" para tipos de fuentes particulares:
Artículos de revistas Tesis Libros
Ofrecemos descuentos en todos los planes premium para autores cuyas obras están incluidas en selecciones literarias temáticas. ¡Contáctenos para obtener un código promocional único!

Pasar a la bibliografía