Artículos de revistas sobre el tema "Nanoelectronic device"
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Nikolić, K., M. Forshaw y R. Compañó. "The Current Status of Nanoelectronic Devices". International Journal of Nanoscience 02, n.º 01n02 (febrero de 2003): 7–29. http://dx.doi.org/10.1142/s0219581x03001048.
Texto completoKosina, Hans y Siegfried Selberherr. "Device Simulation Demands of Upcoming Microelectronics Devices". International Journal of High Speed Electronics and Systems 16, n.º 01 (marzo de 2006): 115–36. http://dx.doi.org/10.1142/s0129156406003576.
Texto completoWhite, Marvin H., Yu (Richard) Wang, Stephen J. Wrazien y Yijie (Sandy) Zhao. "ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY". International Journal of High Speed Electronics and Systems 16, n.º 02 (junio de 2006): 479–501. http://dx.doi.org/10.1142/s0129156406003801.
Texto completoPanfilov, Y. V., I. A. Rodionov, I. A. Ryzhikov, A. S. Baburin, D. O. Moskalev y E. S. Lotkov. "Ultrathin film deposition for nanoelectronic device manucturing". IOP Conference Series: Materials Science and Engineering 781 (5 de mayo de 2020): 012021. http://dx.doi.org/10.1088/1757-899x/781/1/012021.
Texto completoSaxena, Shubhangi y Kamsali Manjunathachari. "Novel Nanoelectronic Materials and Devices: For Future Technology Node". ECS Transactions 107, n.º 1 (24 de abril de 2022): 15701–11. http://dx.doi.org/10.1149/10701.15701ecst.
Texto completoKOSINA, HANS. "NANOELECTRONIC DEVICE SIMULATION BASED ON THE WIGNER FUNCTION FORMALISM". International Journal of High Speed Electronics and Systems 17, n.º 03 (septiembre de 2007): 475–84. http://dx.doi.org/10.1142/s0129156407004667.
Texto completoNidhi, Tashi Nautiyal y Samaresh Das. "Large-Scale Synthesis of Nickel Sulfide for Electronic Device Applications". MRS Advances 5, n.º 52-53 (2020): 2727–35. http://dx.doi.org/10.1557/adv.2020.339.
Texto completoLiffmann, R., M. Homberger, M. Mennicken, S. Karthäuser y U. Simon. "Polydiacetylene stabilized gold nanoparticles – extraordinary high stability and integration into a nanoelectrode device". RSC Advances 5, n.º 125 (2015): 102981–92. http://dx.doi.org/10.1039/c5ra17545c.
Texto completoJanes, D. B., V. R. Kolagunta, M. Batistuta, B. L. Walsh, R. P. Andres, Jia Liu, J. Dicke et al. "Nanoelectronic device applications of a chemically stable GaAs structure". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, n.º 4 (1999): 1773. http://dx.doi.org/10.1116/1.590824.
Texto completoMüller, T., A. Lorke, Q. T. Do, F. J. Tegude, D. Schuh y W. Wegscheider. "A three-terminal planar selfgating device for nanoelectronic applications". Solid-State Electronics 49, n.º 12 (diciembre de 2005): 1990–95. http://dx.doi.org/10.1016/j.sse.2005.09.004.
Texto completoBae, Choelhwyi y Gerald Lucovsky. "Low temperature semiconductor surface passivation for nanoelectronic device applications". Surface Science 532-535 (junio de 2003): 759–63. http://dx.doi.org/10.1016/s0039-6028(03)00181-x.
Texto completoWONG, H. S. PHILIP. "NANOELECTRONICS – OPPORTUNITIES AND CHALLENGES". International Journal of High Speed Electronics and Systems 16, n.º 01 (marzo de 2006): 83–94. http://dx.doi.org/10.1142/s0129156406003540.
Texto completoBondarev, A. V. y V. N. Efanov. "ANALYSIS OF DYNAMIC PROCESSES IN NANOELECTRONIC STRUCTURES BASED ON MEMRESISTIVE ELEMENTS". Izvestiya of Samara Scientific Center of the Russian Academy of Sciences 23, n.º 2 (2021): 91–97. http://dx.doi.org/10.37313/1990-5378-2021-23-2-91-97.
Texto completoMennicken, Max, Sophia Katharina Peter, Corinna Kaulen, Ulrich Simon y Silvia Karthäuser. "Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes". Beilstein Journal of Nanotechnology 13 (15 de febrero de 2022): 219–29. http://dx.doi.org/10.3762/bjnano.13.16.
Texto completoVahapoglu, Ensar, James P. Slack-Smith, Ross C. C. Leon, Wee Han Lim, Fay E. Hudson, Tom Day, Tuomo Tanttu et al. "Single-electron spin resonance in a nanoelectronic device using a global field". Science Advances 7, n.º 33 (agosto de 2021): eabg9158. http://dx.doi.org/10.1126/sciadv.abg9158.
Texto completoLei, Wen, Bo Cai, Huanfu Zhou, Gunter Heymann, Xin Tang, Shengli Zhang y Xing Ming. "Ferroelastic lattice rotation and band-gap engineering in quasi 2D layered-structure PdSe2 under uniaxial stress". Nanoscale 11, n.º 25 (2019): 12317–25. http://dx.doi.org/10.1039/c9nr03101d.
Texto completoFedoseyev, Alexander I., Marek Turowski y Marek S. Wartak. "Kinetic and Quantum Models for Nanoelectronic and Optoelectronic Device Simulation". Journal of Nanoelectronics and Optoelectronics 2, n.º 3 (1 de diciembre de 2007): 234–56. http://dx.doi.org/10.1166/jno.2007.303.
Texto completoMuhonen, Juha T., Juan P. Dehollain, Arne Laucht, Fay E. Hudson, Rachpon Kalra, Takeharu Sekiguchi, Kohei M. Itoh et al. "Storing quantum information for 30 seconds in a nanoelectronic device". Nature Nanotechnology 9, n.º 12 (12 de octubre de 2014): 986–91. http://dx.doi.org/10.1038/nnano.2014.211.
Texto completoSajjad, Muhammad, Gerardo Morell y Peter Feng. "Advance in Novel Boron Nitride Nanosheets to Nanoelectronic Device Applications". ACS Applied Materials & Interfaces 5, n.º 11 (23 de mayo de 2013): 5051–56. http://dx.doi.org/10.1021/am400871s.
Texto completoRose, G. S., M. M. Ziegler y M. R. Stan. "Large-signal two-terminal device model for nanoelectronic circuit analysis". IEEE Transactions on Very Large Scale Integration (VLSI) Systems 12, n.º 11 (noviembre de 2004): 1201–8. http://dx.doi.org/10.1109/tvlsi.2004.836291.
Texto completoPetrakov, Dmitry S., Dmitry I. Smirnov, Nikolay N. Gerasimenko, Nurlan A. Medetov y Azamat A. Jikeev. "Implementation of software for data processing of X-ray optical measurements for the analysis of structural parameters". Journal of Applied Crystallography 52, n.º 1 (1 de febrero de 2019): 186–92. http://dx.doi.org/10.1107/s1600576718016837.
Texto completoAbderrahmane, Abdelkader, Changlim Woo y Pil-Ju Ko. "Low Power Consumption Gate-Tunable WSe2/SnSe2 van der Waals Tunnel Field-Effect Transistor". Electronics 11, n.º 5 (7 de marzo de 2022): 833. http://dx.doi.org/10.3390/electronics11050833.
Texto completoLe, Ha-Linh Thi, Fatme Jardali y Holger Vach. "Deposition of hydrogenated silicon clusters for efficient epitaxial growth". Physical Chemistry Chemical Physics 20, n.º 23 (2018): 15626–34. http://dx.doi.org/10.1039/c8cp00764k.
Texto completoLi, Chao, Bo Lei, Wendy Fan, Daihua Zhang, M. Meyyappan y Chongwu Zhou. "Molecular Memory Based on Nanowire–Molecular Wire Heterostructures". Journal of Nanoscience and Nanotechnology 7, n.º 1 (1 de enero de 2007): 138–50. http://dx.doi.org/10.1166/jnn.2007.18011.
Texto completoSchuerle, Simone, Manish K. Tiwari, Kaiyu Shou, Dimos Poulikakos y Bradley J. Nelson. "Fabricating devices with dielectrophoretically assembled, suspended single walled carbon nanotubes for improved nanoelectronic device characterization". Microelectronic Engineering 88, n.º 8 (agosto de 2011): 2740–43. http://dx.doi.org/10.1016/j.mee.2011.01.008.
Texto completoYue, Chenxi, Shuye Jiang, Hao Zhu, Lin Chen, Qingqing Sun y David Zhang. "Device Applications of Synthetic Topological Insulator Nanostructures". Electronics 7, n.º 10 (1 de octubre de 2018): 225. http://dx.doi.org/10.3390/electronics7100225.
Texto completoChen, An. "(Invited, Digital Presentation) Emerging Materials and Devices for Energy-Efficient Computing". ECS Meeting Abstracts MA2022-01, n.º 19 (7 de julio de 2022): 1073. http://dx.doi.org/10.1149/ma2022-01191073mtgabs.
Texto completoEl Sachat, Alexandros, Francesc Alzina, Clivia M. Sotomayor Torres y Emigdio Chavez-Angel. "Heat Transport Control and Thermal Characterization of Low-Dimensional Materials: A Review". Nanomaterials 11, n.º 1 (13 de enero de 2021): 175. http://dx.doi.org/10.3390/nano11010175.
Texto completoPrasad, Vikash y Debaprasad Das. "A Review on MOSFET-Like CNTFETs". Science & Technology Journal 4, n.º 2 (1 de julio de 2016): 124–29. http://dx.doi.org/10.22232/stj.2016.04.02.06.
Texto completoTERANISHI, Toshiharu y Masayuki KANEHARA. "Strategy to Fabricate Small Gold Nanoparticle Superlattices and Application to Nanoelectronic Device". Journal of the Vacuum Society of Japan 51, n.º 11 (2008): 731–36. http://dx.doi.org/10.3131/jvsj2.51.731.
Texto completoHaley, Benjamin P., Sunhee Lee, Mathieu Luisier, Hoon Ryu, Faisal Saied, Steve Clark, Hansang Bae y Gerhard Klimeck. "Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB". Journal of Physics: Conference Series 180 (1 de julio de 2009): 012075. http://dx.doi.org/10.1088/1742-6596/180/1/012075.
Texto completoKumar, S. Bala, S. G. Tan, M. B. A. Jalil, P. Q. Cheung y Yong Jiang. "Nanoelectronic logic device based on the manipulation of magnetic and electric barriers". Journal of Applied Physics 103, n.º 5 (marzo de 2008): 054310. http://dx.doi.org/10.1063/1.2838211.
Texto completoKang, Jeong Won y Ho Jung Hwang. "Model schematics of a nanoelectronic device based on multi-endo-fullerenes electromigration". Physica E: Low-dimensional Systems and Nanostructures 27, n.º 1-2 (marzo de 2005): 245–52. http://dx.doi.org/10.1016/j.physe.2004.11.014.
Texto completoGan, C. L., E. K. Ng, B. L. Chan, U. Hashim y F. C. Classe. "Technical Barriers and Development of Cu Wirebonding in Nanoelectronics Device Packaging". Journal of Nanomaterials 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/173025.
Texto completoVaknin, Yonatan, Ronen Dagan y Yossi Rosenwaks. "Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors". Nanomaterials 9, n.º 6 (14 de junio de 2019): 882. http://dx.doi.org/10.3390/nano9060882.
Texto completoBayan, Sayan y Dambarudhar Mohanta. "Significant Fowler–Nordheim tunneling across ZnO – Nanorod based nanojunctions for nanoelectronic device applications". Current Applied Physics 13, n.º 4 (junio de 2013): 705–9. http://dx.doi.org/10.1016/j.cap.2012.11.009.
Texto completoYang, Xiaonian, Qiang Li, Guofeng Hu, Zegao Wang, Zhenyu Yang, Xingqiang Liu, Mingdong Dong y Caofeng Pan. "Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application". Science China Materials 59, n.º 3 (marzo de 2016): 182–90. http://dx.doi.org/10.1007/s40843-016-0130-1.
Texto completoChuan, Mu Wen, Muhammad Amirul Irfan Misnon, Nurul Ezaila Alias y Michael Loong Peng Tan. "Device Performance of Double-Gate Schottky-Barrier Graphene Nanoribbon Field-Effect Transistors with Physical Scaling". Journal of Nanotechnology 2023 (16 de enero de 2023): 1–7. http://dx.doi.org/10.1155/2023/1709570.
Texto completoCao, Liemao, Xiaohui Deng, Zhenkun Tang, Guanghui Zhou y Yee Sin Ang. "Designing high-efficiency metal and semimetal contacts to two-dimensional semiconductor γ-GeSe". Applied Physics Letters 121, n.º 11 (12 de septiembre de 2022): 113104. http://dx.doi.org/10.1063/5.0117670.
Texto completoYue, Dewu, Ximing Rong, Shun Han, Peijiang Cao, Yuxiang Zeng, Wangying Xu, Ming Fang, Wenjun Liu, Deliang Zhu y Youming Lu. "High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride". Membranes 11, n.º 12 (1 de diciembre de 2021): 952. http://dx.doi.org/10.3390/membranes11120952.
Texto completoWang, Hui, Xin Wang, Chuandong Li y Ling Chen. "SPICE Mutator Model for Transforming Memristor into Meminductor". Abstract and Applied Analysis 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/281675.
Texto completoБондарев, А. В. y В. Н. Ефанов. "Investigation of Robustness of Nanoelectronic Structures Based on Resonant Tunneling Elements". Proceedings of Universities. Electronics 26, n.º 6 (diciembre de 2021): 491–507. http://dx.doi.org/10.24151/1561-5405-2021-26-6-491-507.
Texto completoWagner, Tino, Hannes Beyer, Patrick Reissner, Philipp Mensch, Heike Riel, Bernd Gotsmann y Andreas Stemmer. "Kelvin probe force microscopy for local characterisation of active nanoelectronic devices". Beilstein Journal of Nanotechnology 6 (23 de noviembre de 2015): 2193–206. http://dx.doi.org/10.3762/bjnano.6.225.
Texto completoSaga, Koichiro y Takeshi Hattori. "Wafer Cleaning Using Supercritical CO2 in Semiconductor and Nanoelectronic Device Fabrication". Solid State Phenomena 134 (noviembre de 2007): 97–103. http://dx.doi.org/10.4028/www.scientific.net/ssp.134.97.
Texto completoDavidson, J. L., W. P. Kang, K. Subramanian y Y. M. Wong. "Forms and behaviour of vacuum emission electronic devices comprising diamond or other carbon cold cathode emitters". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, n.º 1863 (19 de noviembre de 2007): 281–93. http://dx.doi.org/10.1098/rsta.2007.2154.
Texto completoVenkataraman, Anusha, Eberechukwu Amadi y Chris Papadopoulos. "Molecular-Scale Hardware Encryption Using Tunable Self-Assembled Nanoelectronic Networks". Micro 2, n.º 3 (21 de junio de 2022): 361–68. http://dx.doi.org/10.3390/micro2030024.
Texto completoMajidi, Mohammad, Mohammad Taghi Ahmadi y Meisam Rahmani. "Analytical Modeling of Carbon Nanoparticle-Based Symmetric p–n Junction". Advanced Science, Engineering and Medicine 11, n.º 11 (1 de noviembre de 2019): 1031–35. http://dx.doi.org/10.1166/asem.2019.2446.
Texto completoAl-mashaal, Asaad K. Edaan y Rebecca Cheung. "Delamination of polyimide in hydrofluoric acid". Acta Polytechnica 61, n.º 6 (31 de diciembre de 2021): 684–88. http://dx.doi.org/10.14311/ap.2021.61.0684.
Texto completoCui, Huanqing, Li Cai, Sen Wang, Xiaoqiang Liu y Xiaokuo Yang. "Accurate reliability analysis method for quantum-dot cellular automata circuits". International Journal of Modern Physics B 29, n.º 29 (13 de noviembre de 2015): 1550203. http://dx.doi.org/10.1142/s0217979215502033.
Texto completoKelly, Thomas F., Keith Thompson, Emmanuelle A. Marquis y David J. Larson. "Atom Probe Tomography Defines Mainstream Microscopy at the Atomic Scale". Microscopy Today 14, n.º 4 (julio de 2006): 34–41. http://dx.doi.org/10.1017/s1551929500050264.
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