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Artículos de revistas sobre el tema "Nano Magnetic Logic"

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Autor: Grafiati
Publicado: 14 de marzo de 2023

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1

Kumaresan, Raja Sekar, Marshal Raj y Lakshminarayanan Gopalakrishnan. "Design and implementation of a nano magnetic logic barrel shifter using beyond-CMOS technology". Journal of Electrical Engineering 73, n.º 1 (1 de febrero de 2022): 1–10. http://dx.doi.org/10.2478/jee-2022-0001.

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Abstract Bit manipulation plays a significant role in high-speed digital signal processing (DSP) and data computing systems, and shift and rotation operations are crucial functions in it. In general, barrel shifters are used to perform these operations effectively. Nano magnetic logic circuits are among the promising beyond-CMOS alternative technologies for the design of high-speed circuits. Most of the existing circuits that have been developed using nano magnets are combinational circuits. In this work, a barrel shifter is implemented and realised using in-plane nano magnetic logic. The proposed design is the first of its kind nano magnetic logic circuit. The nano magnetic logic circuit implementation, layout generation, simulation, and validation were performed using the ToPoliNano and ModelSim tools. The logical equivalent design was synthesised and evaluated using the Synopsys Design Compiler tool. The proposed barrel shifter was realised using majority logic has 1769037 nano magnets with a boxing area of 481 × 13104 µm2 and 3276 clock zones after optimisation with the Barycenter algorithm. The proposed barrel shifter realised using Boolean logic has 315276 nano magnets with a boxing area of 265 × 5028 µm2 and 1257 clock zones after optimisation with the Barycenter algorithm. The proposed design results demonstrate that complex systems can be developed using nano magnetic logic by combining combinational and sequential circuits.
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2

Das, Jayita, Syed M. Alam y Sanjukta Bhanja. "Nano Magnetic STT-Logic Partitioning for Optimum Performance". IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22, n.º 1 (enero de 2014): 90–98. http://dx.doi.org/10.1109/tvlsi.2012.2236690.

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3

Riente, Fabrizio, Giovanna Turvani, Marco Vacca, Massimo Ruo Roch, Maurizio Zamboni y Mariagrazia Graziano. "ToPoliNano: A CAD Tool for Nano Magnetic Logic". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 36, n.º 7 (julio de 2017): 1061–74. http://dx.doi.org/10.1109/tcad.2017.2650983.

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4

Yang, Liu, Wendi Li, Ying Tao, Kaifeng Dong, Fang Jin y Huihui Li. "Reconfigurable and reusable skyrmion logic gates with circular track". AIP Advances 13, n.º 2 (1 de febrero de 2023): 025227. http://dx.doi.org/10.1063/9.0000402.

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Magnetic skyrmion, a nano-sized spin texture with topological property, have the potential to develop high-density, low-power, and multifunctional spintronic devices. To realize the reconfiguration of a single logic device and the implementation of the complete logic functions, a new reconfigurable and reusable skyrmion logic is proposed and verified by micromagnetic simulation. Logic functions including AND, OR, NOT, NAND and NOR are realized in ferromagnetic (FM) nanotrack by skyrmion-edge repulsions and the voltage control of magnetic anisotropy (VCMA) effect. The working state of the potential well can be controlled by the link of the input signals, thus changing the function type. In addition, through reusing skyrmion in circular track, the energy required for creation and deletion is reduced. This work can provide guidance for the design and optimization of reconfigurable and reusable logic devices with circular track based on skyrmion.
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5

Sarkar, Anup, Pranab K. Dutta, Ankush Ghosh, Sudhabindu Ray y Subir K. Sarkar. "Implementation of Universal Gates (NAND) Based on Nano-Magnetic Logic Using Multiferroics". Quantum Matter 5, n.º 4 (1 de agosto de 2016): 505–9. http://dx.doi.org/10.1166/qm.2016.1338.

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6

Garlando, U., F. Riente, G. Turvani, A. Ferrara, G. Santoro, M. Vacca y M. Graziano. "Architectural exploration of perpendicular Nano Magnetic Logic based circuits". Integration 63 (septiembre de 2018): 275–82. http://dx.doi.org/10.1016/j.vlsi.2018.05.001.

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7

Farzaneh, Farnoosh, Reza Faghih Mirzaee y Keivan Navi. "Novel implementation of 3D multiplexers in nano magnetic logic technology". Microelectronics International 37, n.º 4 (20 de julio de 2020): 173–79. http://dx.doi.org/10.1108/mi-06-2020-0036.

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Purpose Owing to recent challenges of CMOS manufacturing and power consumption in silicon technologies among alternative technologies, Nanomagnetic logic (NML) is one of the most promising technologies, so it was selected for this study. NML is non-volatile with ultra-low power dissipation that operates at room temperature. This paper aims to propose novel implementation of 2% and 4% multiplexers (MUXs) in NML technology. Design/methodology/approach The proposed multiplexers in NML technology are verified by HDL-based simulators. In addition, this study estimated area and power dissipation of the proposed design to compare and approve the promising improvements in comparison to other similar NML implementations. Findings The results show the remarkable improvements in terms of APDP term in comparison to the recent proposed MUXs in NML technology which are reported in Table 2. The proposed implementation of the MUX in NML is designed in three-dimensional layout to improve interconnection complexity which is an integration challenge. Also, by facilitating the routing signals and total wire length needed for clock signals, the negative impact of the power dissipated in clock wires is improved. Originality/value These findings would appeal to a broad audience, such as the readership of Microelectronics International Journal. The authors confirm that this work is original and has not been published elsewhere nor is it currently under consideration for publication elsewhere. All authors have approved the paper and agreed with submission to Microelectronics International Journal. The authors have read and have abided by the statement of ethical standards for manuscripts submitted to Microelectronics International Journal. The authors have no conflict of interest to declare.
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8

Karunaratne, D. K. y Sanjukta Bhanja. "Study of single layer and multilayer nano-magnetic logic architectures". Journal of Applied Physics 111, n.º 7 (abril de 2012): 07A928. http://dx.doi.org/10.1063/1.3676052.

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9

Chau, Robert, Boyan Boyanov, Brian Doyle, Mark Doczy, Suman Datta, Scott Hareland, Ben Jin, Jack Kavalieros y Matthew Metz. "Silicon nano-transistors for logic applications". Physica E: Low-dimensional Systems and Nanostructures 19, n.º 1-2 (julio de 2003): 1–5. http://dx.doi.org/10.1016/s1386-9477(03)00284-4.

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10

Olyaee, Saeed. "Ultra-fast and compact all-optical encoder based on photonic crystal nano-resonator without using nonlinear materials". Photonics Letters of Poland 11, n.º 1 (3 de abril de 2019): 10. http://dx.doi.org/10.4302/plp.v11i1.890.

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In this paper an ultra-compact all-optical encoder is presented by using a two-dimensional photonic crystal. The designed logic gate is based on the interference effect. The proposed structure consists of several photonic crystal waveguides connected by 2 nano-resonators. The nano-resonators are designed to reduce the size of the radius of the dielectric rods. The contrast ratios and delay time for the proposed all-optical encoder are respectively 6 dB and 125 fs. The size of the structure is equal to 132 µm2. Equality of the output power in the logic states “one”, the small dimensions, the low delay time, compact and simple structure have shown that the logic gate is suitable for the using in optical integrated circuits. Full Text: PDF ReferencesA. Salmanpour, Sh. Mohammadnejad, A. Bahrami, "Photonic crystal logic gates: an overview", Optical and Quantum Electronics. 47, 2249 (2015). CrossRef S. C. Xavier, B. E. Carolin, A. p. Kabilan, W. Johnson, "Compact photonic crystal integrated circuit for all-optical logic operation", IET Optoelectronics. 10, 142 (2016). CrossRef Y. Miyoshi, K. Ikeda, H. Tobioka, T. Inoue, S. Namiki, K. Kitayama, "Ultrafast all-optical logic gate using a nonlinear optical loop mirror based multi-periodic transfer function", Optics Express. 16, 2570 (2008). CrossRef D. K. Gayen, A. Bhattachryya, T. Chattopadhyay, J. N. Roy, "Ultrafast All-Optical Half Adder Using Quantum-Dot Semiconductor Optical Amplifier-Based Mach-Zehnder Interferometer", Journal of Lightwave Technology. 30, 3387 (2012). CrossRef A. Mohebzadeh-Bahabady, S. Olyaee, "All-optical NOT and XOR logic gates using photonic crystal nano-resonator and based on an interference effect", IET Optoelectronics. 12, 191 (2018). CrossRef Z. Mohebbi, N. Nozhat, F. Emami, "High contrast all-optical logic gates based on 2D nonlinear photonic crystal", Optics Communications. 355, 130 (2015). CrossRef M. Mansouri-Birjandi, M. Ghadrdan, "Full-optical tunable add/drop filter based on nonlinear photonic crystal ring resonators", Photonics and Nanostructures-Fundamentals and Applications. 21, 44 (2016). CrossRef H. Alipour-Banaei, S. Serajmohammadi, F. Mehdizadeh, "Effect of scattering rods in the frequency response of photonic crystal demultiplexers", Journal of Optoelectronics and Advanced Materials. 17, 259 (2015). DirectLink A. Mohebzadeh-Bahabady, S. Olyaee, H. Arman, "Optical Biochemical Sensor Using Photonic Crystal Nano-ring Resonators for the Detection of Protein Concentration", Current Nanoscience. 13, 421 (2017). CrossRef S. Olyaee, A. Mohebzadeh-Bahabady, "Designing a novel photonic crystal nano-ring resonator for biosensor application", Optical and Quantum Electronics. 47, 1881 (2015). CrossRef F. Parandin, R. Malmir, M. Naseri, A. Zahedi, "Reconfigurable all-optical NOT, XOR, and NOR logic gates based on two dimensional photonic crystals", Superlattices and Microstructures. 113, 737 (2018). CrossRef F. Mehdizadeh, M. Soroosh, H. Alipour-Banaei, "Proposal for 4-to-2 optical encoder based on photonic crystals", IET Optoelectronics. 11, 29 (2017). CrossRef M. Hassangholizadeh-Kashtiban, R. Sabbaghi-Nadooshan, H. Alipour-Banaei, "A novel all optical reversible 4 × 2 encoder based on photonic crystals", Optik. 126, 2368 (2015). CrossRef T. A. Moniem, "All-optical digital 4 × 2 encoder based on 2D photonic crystal ring resonators", Journal of Modern Optics. 63, 735 (2016). CrossRef S. Gholamnejad, M. Zavvari, "Design and analysis of all-optical 4–2 binary encoder based on photonic crystal", Optical and Quantum Electronics. 49, 302 (2017). CrossRef H. Seif-Dargahi, "Ultra-fast all-optical encoder using photonic crystal-based ring resonators", Photonic Network Communications. 36, 272 (2018). CrossRef S. Olyaee, M. Seifouri, A. Mohebzadeh-Bahabady, and M. Sardari, "Realization of all-optical NOT and XOR logic gates based on interference effect with high contrast ratio and ultra-compacted size", Optical and Quantum Electronics. 50, 12 (2018). CrossRef C. J. Wu, C. P. Liu, Z. Ouyang, "Compact and low-power optical logic NOT gate based on photonic crystal waveguides without optical amplifiers and nonlinear materials", Applied Optics.51, 680 (2012). CrossRef Y. C. Jiang, S. B. Liu, H. F. Zhang, X. K. Kong. "Realization of all optical half-adder based on self-collimated beams by two-dimensional photonic crystals", Optics Communications. 348, 90 (2015). CrossRef A. Salmanpour, S. Mohammadnejad, P. T. Omran, "All-optical photonic crystal NOT and OR logic gates using nonlinear Kerr effect and ring resonators", Optical and Quantum Electronics. 47, 3689 (2015). CrossRef E. H. Shaik, N. Rangaswamy, "Single photonic crystal structure for realization of NAND and NOR logic functions by cascading basic gates", Journal of Computational Electronics. 17, 337 (2018). CrossRef
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11

Kuźma, Dominika, Paweł Kowalczyk, Krzysztof Cpałka y Łukasz Laskowski. "A Low-Dimensional Layout of Magnetic Units as Nano-Systems of Combinatorial Logic: Numerical Simulations". Materials 14, n.º 11 (31 de mayo de 2021): 2974. http://dx.doi.org/10.3390/ma14112974.

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Nanotechnology has opened numerous ways for physically realizing very sophisticated nanodevices that can be fabricated exclusively using molecular engineering methods. However, the synthesis procedures that lead to the production of nanodevices are usually complicated and time consuming. For this reason, the destination materials should be well designed. Therefore, numerical simulations can be invaluable. In this work, we present numerical simulations of the magnetic behaviour of magnetic units shaped into nanometric strips as a low dimensional layout that can be used as nano-systems of combinatorial logic. We showed that magnetic layouts that contain fewer than 16 magnetic units can take on a specific configuration as a response to the input magnetic field. Such configuration can be treated as an output binary word. The layouts that contained various numbers of magnetic units showed different switching characteristics (utterly different order of inverting of strips’ magnetic moments), thus creating numerous combinations of the output binary words in response to the analog magnetic signal. The number of possible output binary words can be increased even more by adding parameters––the system’s initial magnetic configuration. The physical realization of the model presented here can be used as a very simple and yet effective encryption device that is based on nanometric arrays of magnetic units rather than an integrated circuit. The same information, provided by the proposed system, can be utilized for the construction of a nano-sensor for measuring of magnetic field with the possibility of checking also the history of magnetization.
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12

Windbacher, Thomas, Hiwa Mahmoudi, Alexander Makarov, Viktor Sverdlov y Siegfried Selberherr. "Multiple purpose spin transfer torque operated devices". Facta universitatis - series: Electronics and Energetics 26, n.º 3 (2013): 227–38. http://dx.doi.org/10.2298/fuee1303227w.

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We summarize our recent work on a non-volatile logic building block required for energy-efficient information processing systems. A sequential logic device, in particular, an alternative non-volatile magnetic flip-flop has been introduced. Its properties are investigated and its extension to a very dense shift register is demonstrated. We show that the flip-flop structure inherently exhibits oscillations and discuss its spin torque nano-oscillator properties.
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13

Deepthi, Gurijala y Madhavi Tatineni. "Quality of Signal Improvement in Prominent CNTFET Based Ternary Logic System for Futuristic Dielectric Inserted MLGNRs for Integrated Circuit Designs". ECS Journal of Solid State Science and Technology 11, n.º 3 (1 de marzo de 2022): 031003. http://dx.doi.org/10.1149/2162-8777/ac5a71.

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Booming VLSI technology has graciously facilitated down-scaling dimensions of on-chip devices and interconnects in integrated circuits (ICs) to nano-miniaturized scale. However, at nano-dimensions where added benefits of scaling are constrained by associated highly-dense on-chip nano-interconnect structures, their electro-migration effects and several limiting signal-integrity issues. These cumulatively affect the quality of signal (QoS) at output. Improving output QoS is essential for attaining faithful system performance. The present paper judiciously attempts to address as well as limit this graving issue and is successfully proven by obtained results. Firstly, different structures and their performance of futuristic graphene based multi-layer graphene nano ribbon (MLGNR) interconnect is investigated. These include basic MLGNR and dielectric inserted side contact MLGNR (DS-MLGNR). Secondly, to improve data rates and performance, efficient and novel carbon nanotube field effect transistors (CNTFETs) based ternary logic system is incorporated for the prominent nano-MLGNR interconnects. Thirdly, QoS enhancement of highly potential DS-MLGNR interconnect is proposed using active shielding technique. Finally, is chase to further enrich QoS, adaptive least mean square (LMS) equalization technique is used at the receiver. The proposed work comprising of futuristic novel graphene interconnects with efficient ternary logic system together with adaption of several QoS improvement techniques are magnificent and panacea solution to limiting nano-interconnects in advanced ICs. Several interesting and seminal analyses such as delay, power, power-delay product, crosstalk, eye-diagram are performed that supports the novelty and effectiveness of the proposed work. The vivid performance analyses have been implemented at nano-size 10 nm technology node.
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14

Al-Rabadi, Anas. "Carbon Nano Tube (CNT) multiplexers for multiple-valued computing". Facta universitatis - series: Electronics and Energetics 20, n.º 2 (2007): 175–86. http://dx.doi.org/10.2298/fuee0702175a.

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Novel two types of Carbon Nano Tube (CNT)-based multiplexers are introduced The first device is a solid-state transmission gate (t-gate) multiplexer that uses CNT as a channel in the Field Effect Transistors (FET) of both n-FET and p-FET types that are used. Because of its very small size, it has been shown that a CNT-based FET switches reliably using much less power than a silicon-based device, and thus the new device will consume less power than traditional t-gate multiplexer. The second new CNT device uses the fundamental Lorentz magnetic force from the basic laws of Electromagnetics as a switching mechanism between two conducting CNTs. The implementation of multiple-valued Galois logic using the new CNT devices is shown. Since a multiplexer is a fundamental logic block, the new devices can have a wide range of applications in a wide variety of nano circuits.
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15

Riente, Fabrizio, Grazvydas Ziemys, Clemens Mattersdorfer, Silke Boche, Giovanna Turvani, Wolfgang Raberg, Sebastian Luber y Stephan Breitkreutz-v. Gamm. "Controlled data storage for non-volatile memory cells embedded in nano magnetic logic". AIP Advances 7, n.º 5 (5 de enero de 2017): 055910. http://dx.doi.org/10.1063/1.4973801.

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16

Lin, Jia-Qiang, Ji-Pei Chen, Zhen-Yu Tan, Yuan Chen, Zhi-Feng Chen, Wen-An Li, Xing-Sen Gao y Jun-Ming Liu. "Manipulation of Skyrmion Motion Dynamics for Logical Device Application Mediated by Inhomogeneous Magnetic Anisotropy". Nanomaterials 12, n.º 2 (16 de enero de 2022): 278. http://dx.doi.org/10.3390/nano12020278.

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Magnetic skyrmions are promising potential information carriers for future spintronic devices owing to their nanoscale size, non-volatility and high mobility. In this work, we demonstrate the controlled manipulation of skyrmion motion and its implementation in a new concept of racetrack logical device by introducing an inhomogeneous perpendicular magnetic anisotropy (PMA) via micromagnetic simulation. Here, the inhomogeneous PMA can be introduced by a capping nano-island that serves as a tunable potential barriers/well which can effectively modulate the size and shape of isolated skyrmion. Using the inhomogeneous PMA in skyrmion-based racetrack enables the manipulation of skyrmion motion behaviors, for instance, blocking, trapping or allowing passing the injected skyrmion. In addition, the skyrmion trapping operation can be further exploited in developing special designed racetrack devices with logic AND and NOT, wherein a set of logic AND operations can be realized via skyrmion–skyrmion repulsion between two skyrmions. These results indicate an effective method for tailoring the skyrmion structures and motion behaviors by using inhomogeneous PMA, which further provide a new pathway to all-electric skyrmion-based memory and logic devices.
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17

Prokopenko, O. V., D. A. Bozhko, V. S. Tyberkevych, A. V. Chumak, V. I. Vasyuchka, A. A. Serga, O. Dzyapko et al. "Recent Trends in Microwave Magnetism and Superconductivity". Ukrainian Journal of Physics 64, n.º 10 (1 de noviembre de 2019): 888. http://dx.doi.org/10.15407/ujpe64.10.888.

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We review the development trends in microwave magnetism and superconductivity over the last five decades. The review contains the key results of recent studies related to the promising areas of modern magnetism and applied physics – spintronics, magnonics, magnon caloritronics, physics of magnonic crystals, spin-wave logic, and the development of novel micro- and nano-scale magnetic devices. The main achievements in these fields of physics are summarized and generalized.
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18

Chappanda, K. N., S. Ilyas, S. N. R. Kazmi, J. Holguin-Lerma, N. M. Batra, P. M. F. J. Costa y M. I. Younis. "A single nano cantilever as a reprogrammable universal logic gate". Journal of Micromechanics and Microengineering 27, n.º 4 (24 de febrero de 2017): 045007. http://dx.doi.org/10.1088/1361-6439/aa5dfa.

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19

Bhoi, Bandan Kumar, Neeraj Kumar Misra y Manoranjan Pradhan. "Synthesis and simulation study of non-restoring cell architecture layout in perpendicular nano-magnetic logic". Journal of Computational Electronics 19, n.º 1 (24 de diciembre de 2019): 407–18. http://dx.doi.org/10.1007/s10825-019-01432-1.

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20

Sun, Junwei, Qinfei Yang y Yanfeng Wang. "Memristive Circuit Design of Five-Person Voter Based on Memristor Ratioed Logic". Journal of Nanoelectronics and Optoelectronics 15, n.º 12 (1 de diciembre de 2020): 1482–93. http://dx.doi.org/10.1166/jno.2020.2895.

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Conventional CMOS-based logic circuits are approaching their limits when it comes to speed and energy consumption, so the development of new electronic components becomes critical. Memristor is a nano-structured special electronic device with the advantages of simple structure, low power consumption and easy integration. This invention supplys a new method for developing complex logic circuits. This article mainly presents the design of a five-person voter circuit. The OR/AND logic can be accomplished by varying the polarity of two parallel memristors. On the basis of the two logic circuits, adder and comparator are constructed. Further, based on the adder and comparator, a five-person voter is implemented. The correctness and rationality of the five-person voter based on MRL are confirmed via logistical analysis and simulation. Compared with the traditional logic circuits, the logic circuit designed in this paper has advantages in area cost. The realization of the five-person voter circuit further proves that the logic circuit based on memristor can be cascaded. The research results are expected to build more complex circuits, which may provide a reference for the design of other practical circuits.
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21

Maiti, Santanu K. "Implementation of Classical Logic Gates at Nano-Scale Level Using Magnetic Quantum Rings: A Theoretical Study". Journal of Computational and Theoretical Nanoscience 8, n.º 4 (1 de abril de 2011): 676–93. http://dx.doi.org/10.1166/jctn.2011.1739.

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22

Meiri, Amihai. "Nano electro-optical modulator and all-optical logic gate on a silicon chip". Journal of Nanophotonics 5, n.º 1 (1 de enero de 2011): 051811. http://dx.doi.org/10.1117/1.3600615.

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23

Sun, Kangcheng, Xiaohan Chen, Qingkang Ren y Chao Wang. "Interlayer-enhanced room temperature in-plane magnetoresistance in graphene nano-crystalline carbon (GNC) film/SiO2/p-Si heterostructures". Applied Physics Letters 120, n.º 21 (23 de mayo de 2022): 212402. http://dx.doi.org/10.1063/5.0087316.

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Graphene nano-crystalline carbon film/SiO2/p-Si heterostructures were fabricated with SiO2 interlayer thicknesses varying from 0 to 1000 nm, and their in-plane magnetoresistance (MR) was investigated. The results showed that, compared to the 0 nm SiO2 case, the presence of a 5 nm SiO2 interlayer significantly improved the room temperature MR by more than eight times (from 2.5% to 20.9% at 280 K). For SiO2 layers with thicknesses of 50 nm and above, only small negative MR values were observed. For all SiO2 thicknesses, the variations in the mobility of heterostructures were highly consistent with their MR performance. The results of this study provide a practical route to building graphene-based high-performance MR devices suitable for mass production as magnetic sensors and magnetic logic devices.
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24

Iusipova, Iu A. y A. I. Popov. "Spin Valves in Microelectronics. Review". Proceedings of Universities. Electronics 26, n.º 1 (febrero de 2021): 7–29. http://dx.doi.org/10.24151/1561-5405-2021-26-1-7-29.

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The base element of micromagnetic devices are the layered spin-valve structures. Small sizes, compatibility with the CMOS technology, scaling ability and various work conditions make the spin-valve structures a universal component of modern microelectronics. The purpose of present work is the analysis, systematization and generalization of the data of the work theoretical bases, experimental data and the application of spin valves. In the review, the hard disc drives, random-access magnetoresistive memory, the spin-transfer nano-oscillators, the magnetic biosensors, as well as various computing systems, operating on the principles of stochastic and deterministic logic, have been considered. The key theoretical works devoted to giant magnetoresistance and spin transfer have been used. The data on various types of the hard-disc readheads have been systematized, their architecture and parameters have been compared, and it has been shown how modern scientific research of nanomagnetic phenomena accelerates the growth rate of the recording density. The analysis of modern research devoted to magnetoresistive random access memory has been carried out. The problems of energy efficiency and increasing the degree of the integration for these devices have been discussed. The latest achievements in the field of materials, geometry and the properties of the spin-transfer nano-oscillators, as well as the problems and prospects for the development of this technology have been considered. The analysis of theoretical and experimental works, in which the spin-gate structures have been used to perform the logical operations of Boolean and non-Boolean logic, has been carried out. It has been shown how the probabilistic nature of the unstable switching of spin gates is used in the op-eration of the unconventional computing systems, namely, neuromorphic or Bayesian networks. The principles of operation of the spin valves as magnetic biosensors have been considered and the advantages of their application have been discussed.
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25

Huang, Chun, Xinya Zhang, Panlong Li, Junwei Sun, Xuncai Zhang y Yanfeng Wang. "Design of Sixteen-Input Priority Encoder with DNA Nano Switches". Journal of Nanoelectronics and Optoelectronics 17, n.º 10 (1 de octubre de 2022): 1354–65. http://dx.doi.org/10.1166/jno.2022.3281.

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With the application of DNA computing in more and more fields, the tasks are becoming more and more complex, and the scale of DNA circuits is gradually increasing. However, the current investigation of largescale circuits of DNA molecules is still a challenge. So it is crucial to optimize the performance of large-scale DNA circuits. In this paper, a large-scale digital logic circuit 16-Input-5-Output Priority Encoder is realized by using the DNA nano switches for the first time. The simulation of the 16-Input-5-Output Priority Encoder circuit shows that this method solves the problems of NOT gate instability and optimizes the DNA circuit in terms of reaction time, circuit complexity, and experimental difficulty. This paper proves the feasibility and superiority of using DNA nano switches to realize large-scale circuits, provides a new idea for realizing large-scale DNA circuits, and brings new development for the application of DNA circuits in biosensor, DNA complex computing and other fields.
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26

Zhang, Heng, Chao Li, Jianlu Wang, Weida Hu, David Wei Zhang y Peng Zhou. "Complementary Logic with Voltage Zero-Loss and Nano-Watt Power via Configurable MoS2 /WSe2 Gate". Advanced Functional Materials 28, n.º 44 (14 de septiembre de 2018): 1805171. http://dx.doi.org/10.1002/adfm.201805171.

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27

Fulara, H., M. Zahedinejad, R. Khymyn, A. A. Awad, S. Muralidhar, M. Dvornik y J. Åkerman. "Spin-orbit torque–driven propagating spin waves". Science Advances 5, n.º 9 (septiembre de 2019): eaax8467. http://dx.doi.org/10.1126/sciadv.aax8467.

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Spin-orbit torque (SOT) can drive sustained spin wave (SW) auto-oscillations in a class of emerging microwave devices known as spin Hall nano-oscillators (SHNOs), which have highly nonlinear properties governing robust mutual synchronization at frequencies directly amenable to high-speed neuromorphic computing. However, all demonstrations have relied on localized SW modes interacting through dipolar coupling and/or direct exchange. As nanomagnonics requires propagating SWs for data transfer and additional computational functionality can be achieved using SW interference, SOT-driven propagating SWs would be highly advantageous. Here, we demonstrate how perpendicular magnetic anisotropy can raise the frequency of SOT-driven auto-oscillations in magnetic nanoconstrictions well above the SW gap, resulting in the efficient generation of field and current tunable propagating SWs. Our demonstration greatly extends the functionality and design freedom of SHNOs, enabling long-range SOT-driven SW propagation for nanomagnonics, SW logic, and neuromorphic computing, directly compatible with CMOS technology.
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28

Bindal, Ahmet y Sotoudeh Hamedi-Hagh. "The design and analysis of dynamic NMOSFET/PMESFET logic using silicon nano-wire technology". Semiconductor Science and Technology 21, n.º 8 (20 de junio de 2006): 1002–12. http://dx.doi.org/10.1088/0268-1242/21/8/003.

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29

Zhang, Yujia, Yue Yu, Ke Kang, Xuekang Wang, Nanhang Zhu, Xingyou Wang, Qiangying Yi y Yao Wu. "Nano-magnetic aptamer sensor incorporating AND logic recognition-launched hybridization chain reaction for organ origin identification of circulating tumor cells". Nano Today 49 (abril de 2023): 101817. http://dx.doi.org/10.1016/j.nantod.2023.101817.

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30

Shahmoon, Asaf. "All-optical nano modulator, sensor, wavelength converter, logic gate, and flip flop based on a manipulated gold nanoparticle". Journal of Nanophotonics 4, n.º 1 (1 de julio de 2010): 041780. http://dx.doi.org/10.1117/1.3473784.

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31

Succar, Malek y Mohammad Haidar. "Spin wave excitations in a nanowire spin Hall oscillator with perpendicular magnetic anisotropy". Journal of Applied Physics 133, n.º 9 (7 de marzo de 2023): 093901. http://dx.doi.org/10.1063/5.0133176.

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Spin torque oscillators (STOs) are emerging microwave devices that can potentially be used in spin-logic devices and the next-generation high-speed computing architecture. Thanks to their non-linear nature, STOs are easily tunable by the magnetic field and the dc current. Spin Hall nano-oscillators are promising types of STOs and most of the current studies focus on localized modes that can be easily excited. Here, we study using micromagnetic simulations, the nature of the spin-torque-induced excitations in nanowire devices made of perpendicular magnetic anisotropy (PMA) materials. Our results showed that, upon including PMA, the excitation of localized and propagating spin wave modes is feasible. We study the nature of the mode excitations as a function of the PMA strength ([Formula: see text]) and the current. Indeed, we estimate a critical value of [Formula: see text] to allow for the excitation of the propagating spin wave. We attribute this mode selectivity between localized and propagating modes to the magnitude and the change of the sign of the nonlinearity of the system from negative to positive at a non-zero [Formula: see text], which is supported by analytical calculations. Our results provide deep insight into engineering microwave devices for future magnonic and computational applications.
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32

Li, Cheng, Zijin Pan, Xunyu Li, Weiquan Hao, Runyu Miao y Albert Wang. "Selective Overview of 3D Heterogeneity in CMOS". Nanomaterials 12, n.º 14 (8 de julio de 2022): 2340. http://dx.doi.org/10.3390/nano12142340.

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As the demands for improved performance of integrated circuit (IC) chips continue to increase, while technology scaling driven by Moore’s law is becoming extremely challenging, if not impractical or impossible, heterogeneous integration (HI) emerges as an attractive pathway to further enhance performance of Si-based complementary metal-oxide-semiconductor (CMOS) chips. The underlying basis for using HI technologies and structures is that IC performance goes well beyond classic logic functions; rather, functionalities and complexity of smart chips span across the full information chain, including signal sensing, conditioning, processing, storage, computing, communication, control, and actuation, which are required to facilitate comprehensive human–world interactions. Therefore, HI technologies can bring in more function diversifications to make system chips smarter within acceptable design constraints, including costs. Over the past two decades or so, a large number of HI technologies have been explored to increase heterogeneities in materials, technologies, devices, circuits, and system architectures, making it practically impossible to provide one single comprehensive review of everything in the field in one paper. This article chooses to offer a topical overview of selected HI structures that have been validated in CMOS platforms, including a stacked-via vertical magnetic-cored inductor structure in CMOSs, a metal wall structure in the back end of line (BEOL) of CMOSs to suppress global flying noises, an above-IC graphene nano-electromechanical system (NEMS) switch and nano-crossbar array electrostatic discharge (ESD) protection structure, and graphene ESD interconnects.
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33

Hatefinasab, Seyedehsomayeh. "Carbon Nanotube Field Effect Transistor-Based Hybrid Full Adders Using Gate-Diffusion Input Structure". Journal of Nanoelectronics and Optoelectronics 14, n.º 11 (1 de noviembre de 2019): 1512–22. http://dx.doi.org/10.1166/jno.2019.2661.

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Scaling down the size of transistor in the nanoscale reduces the power supply voltage, as a result, the design of high-performance nano-circuit at low voltage has been considered. Most of digital circuits are composed of different components which determine the performance of the entire digital circuits. With the improvement of these components, the digital circuits can be optimized. One of these components is full adder for which various structures have been proposed to improve its performance, among them the two novel full adder structures are based on Gate-Diffusion Input (GDI) structure and half-classical XOR/XNOR logic (SEMI XOR/XNOR) modules. In this paper, Carbon Nanotube Field Effect Transistor (CNTFET)-based low power full adders by using SEMI XOR logic style and GDI structure are presented. Due to the incomparable thermal and mechanical properties of the CNTFET, it can be the first alternative to substitute the metal oxide field effect transistors (MOSFET). The digital circuits have the better performance based on CNTFET. Therefore, the three proposed full adders in this paper are designed based on CNTFET technology with many merits, such as low power dissipation, less energy delay product (EDP), and high speed at various supply voltages, frequencies, temperatures, load capacitors, and the number of tubes. Moreover, these proposed full adders occupy the minimum area consumption and have better performance in comparison with previous standard full adders. All simulations are done by using the Synopsys HSPICE simulator in 32 nm-CNTFET technology and layout of all full adder circuits are presented on Electric.
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34

Shiratori, Yuta, Kensuke Miura y Seiya Kasai. "Programmable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits". Microelectronic Engineering 88, n.º 8 (agosto de 2011): 2755–58. http://dx.doi.org/10.1016/j.mee.2010.12.007.

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35

Rathore, Sunil, Rajeewa Kumar Jaisawal, Preeti Suryavanshi y Pravin N. Kondekar. "Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET". Semiconductor Science and Technology 37, n.º 5 (12 de abril de 2022): 055019. http://dx.doi.org/10.1088/1361-6641/ac62fb.

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Abstract Self-heating effect (SHE) is a severe issue in advanced nano-scaled devices such as stacked nanosheet field-effect transistors (NS-FET), which raises the device temperature (T D), that ultimately affects the key electrical characteristics, i.e. threshold voltage (V T), DIBL, subthreshold slope (SS), I OFF, I ON, etc. SHE puts design constraints in the advanced CMOS logic devices and circuits. In this paper, we thoroughly investigated the impact of ambient temperature and interface thermal contact resistance induced-self heating effect in the NS-FET using extensive numerical simulations. The weak electron–phonon coupling, phonon scattering, and the ambient temperature-induced joule energy directly coupled with thermal contact resistance cause the SHE-induced thermal degradation, which increases the device temperature (T D) and affects the device reliability. The baseline NS-FET is well-calibrated with the experimental data and 3D quantum corrected drift-diffusion coupled hydrodynamic and thermodynamic transport models is used in our TCAD framework to estimate the impact of ambient temperature and interface thermal contact resistance on the device performance. Moreover, we also evaluate the SHE-induced performance comparison of NS-FET with conventional FinFET and found that thermal degradation in NS-FET potentially worsen the electrical characteristics. Thus, a detailed TCAD analysis shows that the ambient temperature and interface thermal contact resistances deteriorate the effective thermal resistance (R eff) and device performance metrics.
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36

Wang, Kang, Shaojie Hu, Fupeng Gao, Miaoxin Wang y Dawei Wang. "Dual function spin-wave logic gates based on electric field control magnetic anisotropy boundary". Applied Physics Letters 120, n.º 14 (4 de abril de 2022): 142405. http://dx.doi.org/10.1063/5.0089890.

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Spin waves (SWs) have been considered a promising candidate for encoding information with lower power consumption. Here, we propose dual function SW logic gates, one unit cell with two synchronized logic operation functions, based on the electric field controlling of the SW propagation in the Fe film of a [Formula: see text] heterostructure by the motion of a magnetic anisotropy boundary. We show micromagnetic simulations to validate the and–or and nand–nor logic gates. Our research may find a path for simplifying integrated logic circuits using such dual function SW logic gates.
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37

Zhu, Libai, Xiaoguang Xu, Meiling Li, Kangkang Meng, Yong Wu, Jikun Chen y Yong Jiang. "A programmable multi-state logic-in-memory in a single unit based on spin–orbit torque". Applied Physics Letters 121, n.º 21 (21 de noviembre de 2022): 212403. http://dx.doi.org/10.1063/5.0131399.

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Spintronic device based on spin–orbit torque (SOT) is a potential candidate for the next-generation memory and logic devices. Here, we report a SOT-based programmable multi-state logic-in-memory in a single unit. Multi-step magnetization switching behaviors can be achieved in the device with a stacking structure based on Pt/Co bilayers and an Al2O3 spacer layer by varying the thickness of Co and Pt layers. Moreover, five logic gates (NOR, OR, AND, NAND, and NOT) have also been realized by controlling the current and magnetic field. This multi-state logic-in-memory opens a simple and effective way for designing single-unit spintronic devices and extends the potential application of the SOT-based devices in brain-like computations.
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38

Shu, Yun, Qianrui Li, Jing Xia, Ping Lai, Zhipeng Hou, Yonghong Zhao, Degang Zhang, Yan Zhou, Xiaoxi Liu y Guoping Zhao. "Realization of the skyrmionic logic gates and diodes in the same racetrack with enhanced and modified edges". Applied Physics Letters 121, n.º 4 (25 de julio de 2022): 042402. http://dx.doi.org/10.1063/5.0097152.

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Magnetic skyrmions are topological quasiparticles with nanoscale size and high mobility, which have potential applications in information storage and spintronic devices. Here, we computationally investigate the dynamics of isolated skyrmions in a ferromagnetic racetrack, where magnetic properties of the edges are enhanced and modified, forming a channel with lower magnetic anisotropy for skyrmion motion. It is found that the rectangular notch at the edge can have a pinning effect on the skyrmion and enrich the dynamics of the skyrmion. Based on the racetrack with modified edges and the notch, we design a racetrack that realizes the skyrmionic logic AND, OR, and NOT gates as well as the diode in the same magnetic racetrack. It is found that the driving current density could be much smaller than those used in previous designs of skyrmion-based logic gates. By slightly altering the shape of the racetrack, we also design the NAND and NOR gates. Finally, we study the feasibility of our design at finite temperatures. Our results may contribute to the design of nonvolatile spintronic devices with integrated multiple functions and ultra-low energy consumption.
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39

Neşeli, Berkay, Yusuf Abdulaziz Yilmaz, Hamza Kurt y Mirbek Turduev. "Inverse design of ultra-compact photonic gates for all-optical logic operations". Journal of Physics D: Applied Physics 55, n.º 21 (1 de marzo de 2022): 215107. http://dx.doi.org/10.1088/1361-6463/ac5660.

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Abstract Logic gates have great importance in realization of rapid data transmission as well as low loss transfers. In this paper, a multi-objective inverse-design approach is implemented by using objective-first algorithm to design optical AND, OR, NAND and NOT logic gates on Si-platform at the design wavelength of 1.30 μm. For all gates, the design area is fixed to 2.24 μm × 2.24 μm. The optical logic ‘1’ output is accepted to be optical power values greater than 0.8 times of the input optical power. By implementing a Bias waveguide as well as two input ports, we made it possible to achieve logic ‘1’ output for logic operations having no inputs such as ‘0 NAND 0 = 1’ and ‘0 NOT = 1’. We binarized the proposed logic gates, and then numerically analyzed them by using finite-difference time-domain method. Proposed AND gate yields 1.20 times of input power for ‘1 AND 1 = 1’ logic operation and highest logic ‘0’ is obtained for logic operation of ‘1 AND 0 = 0’ as 0.40 times of the input power at the operating wavelength. It is also observed that proposed logic gates can operate not only at the design wavelength of 1.30 μm but also at broad wavelength regions as well. Finally, we demonstrate that it is possible to carry out complex logic operations by combining the proposed logic AND, OR and NAND gates to construct an XOR gate in the same platform.
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40

Dehghan, E., D. Sanavi Khoshnoud y A. S. Naeimi. "NAND/AND/NOT logic gates response in series of mesoscopic quantum rings". Modern Physics Letters B 33, n.º 34 (10 de diciembre de 2019): 1950431. http://dx.doi.org/10.1142/s0217984919504311.

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There is a special class of logic gates, called universal gates, any one of which is sufficient to express any desired computation. The NAND gate is truly global, given that it is already known, each Boolean function can be represented in a circuit that contains only NOT and AND gates, it is sufficient to show that these gates can be defined from the NAND gate. The effect of Rashba spin-orbit interaction (SOI) on the gate response and spin current density in a series of non-interacting one-dimensional rings connected to some leads is studied theoretically within the waveguide theory. The gates response and spin current density are computed in geometry of the system containing two terminal double quantum rings. Also, the presence and absence of Rashba SOI are treated as the two inputs of the AND/NAND/NOT gates. Furthermore, simulation of the device performance demonstrates that vital improvement toward spintronic applications can be achieved by optimizing device parameters such as magnetic flux and Rashba coefficient.
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41

Assanto, Gaetano, Sreekanth Perumbilavil, Armando Piccardi y Martti Kauranen. "Electro-optic steering of random laser emission in liquid crystals". Photonics Letters of Poland 10, n.º 4 (31 de diciembre de 2018): 103. http://dx.doi.org/10.4302/plp.v10i4.852.

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Using an external low-frequency electric field applied to dye-doped nematic liquid crystals, we demonstrate that random lasing obtained by optical pumping can be steered in angular direction by routing an all-optical waveguide able to collect the emitted light. By varying the applied voltage from 0 to 2 V, we reduce the walk-off and sweep the random laser guided beam over 7 degrees. Full Text: PDF ReferencesV. S. Letokhov, "Generation of light by a scattering medium with negative resonance absorption," Sov. Phys. JETP 26 (4), 835 (1968). DirectLink H. Cao, J. Y. Xu, D. Z. Zhang, S.-H. Chang, S. T. Ho, E. W. Seelig, X. Liu, and R. P. H. Chang, "Spatial Confinement of Laser Light in Active Random Media," Phys. Rev. Lett. 84 (24), 5584 (2000). CrossRef D. S. Wiersma, "The physics and applications of random lasers," Nature Phys. 4 (5) 359-367 (2008). CrossRef D. Wiersma and S. Cavalieri, "A temperature-tunable random laser," Nature 414, 708-709 (2001). CrossRef G. Strangi, S. Ferjani, V. Barna, A. De Luca, N. Scaramuzza, C. Versace, C. Umeton, and R. Bartolino, "Random lasing and weak localization of light in dye-doped nematic liquid crystals," Opt. Express 14 (17), 7737 (2006). CrossRef G. Strangi, S. Ferjani, V. Barna, A. De Luca, C. Versace, N. Scaramuzza, and R. Bartolino, "Random lasing in dye doped nematic liquid crystals: the role of confinement geometry," SPIE 6587, 65870P (2007) doi: 10.1117/12.722887 CrossRef S. Ferjani, V. Barna, A. De Luca, C. Versace, and G. Strangi, "Random lasing in freely suspended dye-doped nematic liquid crystals," Opt. Lett. 33(6), 557-559 (2008). CrossRef S. Ferjani, L-V. Sorriso, V. Barna, A. De Luca, R. De Marco, and G. Strangi, "Statistical analysis of random lasing emission properties in nematic liquid crystals," Phys. Rev. E 78 (1) 011707 (2008). CrossRef H. Bian, F. Yao, H. Liu, F. Huang, Y. Pei, C. Hou, and X. Sun, "Optically controlled random lasing based on photothermal effect in dye-doped nematic liquid crystals," Liq. Cryst. 41 (10), 1436-1441 (2014) CrossRef C. R. Lee, S. H. Lin, C. H. Guo, S. H. Chang, T. S. Mo, and S. C. Chu, "All-optically controllable random laser based on a dye-doped polymer-dispersed liquid crystal with nano-sized droplets," Opt. Express 18 (3), 2406-2412 (2010) CrossRef S. Perumbilavil, A. Piccardi, O. Buchnev, M. Kauranen, G. Strangi, and G. Assanto, "Soliton-assisted random lasing in optically-pumped liquid crystals," Appl. Phys. Lett. 109(16), 161105 (2016); ibid. 110(1), 1019902 (2017). CrossRef S. Perumbilavil, A. Piccardi, O. Buchnev, M. Kauranen, G. Strangi, and G. Assanto, "All-optical guided-wave random laser in nematic liquid crystals", Opt. Express 25 (5), 4672-4679 (2017). CrossRef S. Perumbilavil, A. Piccardi, R. Barboza, O. Buchnev, M. Kauranen, G. Strangi, and G. Assanto, "Beaming random laser with soliton control," Nature Comm., in press (2018) CrossRef M. Peccianti, C. Conti, G. Assanto, A. De Luca and C. Umeton, "Routing of Anisotropic Spatial Solitons and Modulational Instability in liquid crystals," Nature 432, 733-737 (2004). CrossRef J. Beeckman, K. Neyts and M. Haeltermann, "Patterned electrode steering of nematicons," J. Opt. A - Pure Appl. Opt. 8 (2), 214-220 (2006). CrossRef A. Piccardi, M. Peccianti, G. Assanto, A. Dyadyusha and M. Kaczmarek, "Voltage-driven in-plane steering of nematicons," Appl. Phys. Lett. 94, 091106 (2009). CrossRef R. Barboza, A. Alberucci, and G. Assanto, "Large electro-optic beam steering with Nematicons", Opt. Lett. 36 (14), 2611–2613 (2011). CrossRef A. Piccardi, A. Alberucci, R. Barboza, O. Buchnev, M. Kaczmarek, and G. Assanto, "In-plane steering of nematicon waveguides across an electrically adjusted interface", Appl. Phys. Lett. 100 (25), 251107 (2012). CrossRef Y. V. Izdebskaya, "Routing of spatial solitons by interaction with rod microelectrodes," Opt. Lett. 39(6), 1681-1684 (2014). CrossRef A. Pasquazi, A. Alberucci, M. Peccianti, and G. Assanto, "Signal processing by opto-optical interactions between self-localized and free propagating beams in liquid crystals," Appl. Phys. Lett. 87, 261104 (2005). CrossRef S. V. Serak, N. V. Tabiryan, M. Peccianti and G. Assanto, "Spatial Soliton All-Optical Logic Gates", IEEE Photon. Technol. Lett. 18 (12), 1287-1289 (2006). CrossRef M. Peccianti, C. Conti, G. Assanto, A. De Luca and C. Umeton, "All Optical Switching and Logic Gating with Spatial Solitons in Liquid Crystals," Appl. Phys. Lett. 81(18), 3335-3337 (2002). CrossRef A. Fratalocchi, A. Piccardi, M. Peccianti and G. Assanto, "Nonlinearly controlled angular momentum of soliton clusters," Opt. Lett. 32(11), 1447-1449 (2007). CrossRef Y. Izdebskaya, V. Shvedov, G. Assanto, and W. Krolikowski, Nat. Comm. 8, 14452 (2017). CrossRef M. Peccianti and G. Assanto, "Nematicons," Phys. Rep. 516, 147-208 (2012). CrossRef Y. Izdebskaya, A. Desyatnikov, G. Assanto and Y. Kivshar, "Deflection of nematicons through interaction with dielectric particles," J. Opt. Soc. Am. B 30(6), 1432-1437 (2013). CrossRef U. Laudyn, M. Kwasny, F. Sala, M. Karpierz, N. F. Smyth, and G. Assanto,"Curved solitons subject to transverse acceleration in reorientational soft matter," Sci. Rep. 7, 12385 (2017). CrossRef A. Alberucci, A. Piccardi, M. Peccianti, M. Kaczmarek and G. Assanto, "Propagation of spatial optical solitons in a dielectric with adjustable nonlinearity", Phys. Rev. A 82, 023806 (2010). CrossRef
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42

Abuelma'atti, Muhammad Taher. "Analog Low-Voltage Current-Mode Implementation of Digital Logic Gates". Active and Passive Electronic Components 26, n.º 2 (2003): 111–14. http://dx.doi.org/10.1080/0882751031000073832.

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In this letter a new technique is introduced for implementing the basic logic functions using analog current-mode techniques. By expanding the logic functions in power series expressions, and using summers and multipliers, realization of the basic logic functions is simplified. Since no transistors are working in saturation, the problem of fan-out is alleviated. To illustrate the proposed technique, a circuit for simultaneous realization of the logic functions NOT, OR, NAND and XOR is considered. SPICE simulation results, obtained with 3 V supply, are included
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43

Gulafshan, Gulafshan, Selma Amara, Rajat Kumar, Danial Khan, Hossein Fariborzi y Yehia Massoud. "Bitwise Logical Operations in VCMA-MRAM". Electronics 11, n.º 18 (6 de septiembre de 2022): 2805. http://dx.doi.org/10.3390/electronics11182805.

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Today’s technology demands compact, portable, fast, and energy-efficient devices. One approach to making energy-efficient devices is an in-memory computation that addresses the memory bottleneck issues of the present computing system by utilizing a spintronic device viz. magnetic tunnel junction (MTJ). Further, area and energy can be reduced through approximate computation. We present a circuit design based on the logic-in-memory computing paradigm on voltage-controlled magnetic anisotropy magnetoresistive random access memory (VCMA-MRAM). During the computation, multiple bit cells within the memory array are selected that are in parallel by activating multiple word lines. The designed circuit performs all logic operations-Read/NOT, AND/NAND, OR/NOR, and arithmetic SUM operation (1-bit approximate adder with 75% accuracy for SUM and accurate carry out) by slight modification using control signals. All the simulations have been performed at a 45 nm CMOS technology node with VCMA-MTJ compact model by using the HSPICE simulator. Simulation results show that the proposed circuit’s approximate adder consumes about 300% less energy and 2.3 times faster than its counterpart exact adder.
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44

Nomura, Hikaru y Ryoichi Nakatani. "NAND/NOR Logical Operation of a Magnetic Logic Gate with Canted Clock-Field". Applied Physics Express 4, n.º 1 (24 de diciembre de 2010): 013004. http://dx.doi.org/10.1143/apex.4.013004.

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45

Al-Sabea, Z. S., A. A. Ibrahim y S. H. Abdulnabi. "Plasmonic Logic Gates at Optimum Optical Communications Wavelength". Advanced Electromagnetics 11, n.º 4 (20 de octubre de 2022): 10–21. http://dx.doi.org/10.7716/aem.v11i4.1894.

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This paper displays a design that realizes all optical logic gates (NOT, AND, OR, NAND, NOR, XOR, XNOR) and consisting of one nanoring and four strips Operates on the principle of resonance. the proposed design works at the wavelength of 1550 nm using insulator-metal-insulator (IMI) plasmonic waveguide. The basic principle of the operation of these gates is input and control signals’ constructive and destructive interference. The proposed transmission threshold’s value is 0.25 between OFF state and ON state. The proposed design has small dimensions (300 nm × 300 nm) and can realize seven logic gates with maximum transmission 134% at NOT gate, 223% at OR gate, 134% at NAND gate and 223% at XNOR gate where the design is optimum and excellent design and the modulation depth is very high because it’s ranges in all gates more than 90%. The proposed structure contributes in building nanocircuits for integrated photonic circuits and optical signal processing.
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46

Suh, Dong Ik, Joon Pyo Kil, Kee Won Kim, Kwang Seok Kim y Wanjun Park. "A Single Magnetic Tunnel Junction Representing the Basic Logic Functions—NAND, NOR, and IMP". IEEE Electron Device Letters 36, n.º 4 (abril de 2015): 402–4. http://dx.doi.org/10.1109/led.2015.2406881.

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47

Ibrahim, T. A., R. Grover, L. C. Kuo, S. Kanakaraju, L. C. Calhoun y P. T. Ho. "All-optical AND/NAND logic gates using semiconductor microresonators". IEEE Photonics Technology Letters 15, n.º 10 (octubre de 2003): 1422–24. http://dx.doi.org/10.1109/lpt.2003.818049.

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48

Mitra, Saibal y Sourangshu Mukhopadhyay. "An all-optical scheme for implementing a NAND logic by dibit representation of squeezed state of light". Journal of Nonlinear Optical Physics & Materials 24, n.º 04 (diciembre de 2015): 1550048. http://dx.doi.org/10.1142/s0218863515500484.

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Squeezed state of light can present a promising world of quantum communication breaking the quantum limit of noise. We report an all-optical NAND logic operation by dibit representation of squeezed light for a highly noise reduced communication.
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49

Lu, Ziyao, Chengyue Xiong, Hongming Mou, Zhaochu Luo, Wanjun Jiang, Xixiang Zhang y Xiaozhong Zhang. "Nonvolatile Magnetic Memory Combined With AND/NAND Boolean Logic Gates Based on Geometry-Controlled Magnetization Switching". IEEE Magnetics Letters 12 (2021): 1–5. http://dx.doi.org/10.1109/lmag.2021.3056321.

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50

Waris, Haroon, Chenghua Wang y Weiqiang Liu. "High-performance approximate half and full adder cells using NAND logic gate". IEICE Electronics Express 16, n.º 6 (2019): 20190043. http://dx.doi.org/10.1587/elex.16.20190043.

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