Literatura académica sobre el tema "NAND Flash Interface"
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Artículos de revistas sobre el tema "NAND Flash Interface"
Myramuru, Shanmukha Sai Nikhil, Dr S. Chandra Mohan Reddy y Dr Gannera Mamatha. "Design and Integration of NAND Flash Memory Controller for Open Power-based Fabless SoC". International Journal of Engineering and Advanced Technology 12, n.º 2 (30 de diciembre de 2022): 137–44. http://dx.doi.org/10.35940/ijeat.d3470.1212222.
Texto completoLiu, Hai Ke, Shun Wang, Xin Gna Kang y Jin Liang Wang. "Realization of NAND FLASH Control Glueless Interface Circuit". Advanced Materials Research 1008-1009 (agosto de 2014): 659–62. http://dx.doi.org/10.4028/www.scientific.net/amr.1008-1009.659.
Texto completoLiu, Gen Xian y Dong Sheng Wang. "Low Cost Wear Leveling for High-Density SPI NAND Flash in Memory Constrained Embedded System". Applied Mechanics and Materials 427-429 (septiembre de 2013): 1277–80. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.1277.
Texto completoHung, Ji Jun, Kai Bu, Zhao Lin Sun, Jie Tao Diao y Jian Bin Liu. "PCI Express-Based NVMe Solid State Disk". Applied Mechanics and Materials 464 (noviembre de 2013): 365–68. http://dx.doi.org/10.4028/www.scientific.net/amm.464.365.
Texto completoMissimer, Katherine, Manos Athanassoulis y Richard West. "Telomere: Real-Time NAND Flash Storage". ACM Transactions on Embedded Computing Systems 21, n.º 1 (31 de enero de 2022): 1–24. http://dx.doi.org/10.1145/3479157.
Texto completoYan, Chin-Rung, Jone F. Chen, Ya-Jui Lee, Yu-Jie Liao, Chung-Yi Lin, Chih-Yuan Chen, Yin-Chia Lin y Huei-Haurng Chen. "Extraction and Analysis of Interface States in 50-nm nand Flash Devices". IEEE Transactions on Electron Devices 60, n.º 3 (marzo de 2013): 992–97. http://dx.doi.org/10.1109/ted.2013.2240458.
Texto completoKim, Geukchan, Hyejin Kim y Sunghoon Chun. "A New Package for High Speed and High Density eStorage Using the Frequency Boosting Chip". International Symposium on Microelectronics 2015, n.º 1 (1 de octubre de 2015): 000220–24. http://dx.doi.org/10.4071/isom-2015-wa22.
Texto completoLi, Qing, Shan Qing Hu, Yang Feng y Teng Long. "The Design and Implementation of a High-Speed and Large-Capacity NAND Flash Storage System". Applied Mechanics and Materials 543-547 (marzo de 2014): 568–71. http://dx.doi.org/10.4028/www.scientific.net/amm.543-547.568.
Texto completoJeong, Jun-Kyo, Jae-Young Sung, Woon-San Ko, Ki-Ryung Nam, Hi-Deok Lee y Ga-Won Lee. "Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory". Micromachines 12, n.º 11 (15 de noviembre de 2021): 1401. http://dx.doi.org/10.3390/mi12111401.
Texto completoYi, Hyun Ju y Tae Hee Han. "Adaptive Design Techniques for High-speed Toggle 2.0 NAND Flash Interface Considering Dynamic Internal Voltage Fluctuations". Journal of the Institute of Electronics Engineers of Korea 49, n.º 9 (25 de septiembre de 2012): 251–58. http://dx.doi.org/10.5573/ieek.2012.49.9.251.
Texto completoTesis sobre el tema "NAND Flash Interface"
Штогрин, Павло Петрович. "Мобільний додаток для моніторингу та прогнозування погодних умов у реальному часі". Bachelor's thesis, КПІ ім. Ігоря Сікорського, 2020. https://ela.kpi.ua/handle/123456789/34793.
Texto completoThe bachelor's project implements a system for monitoring and forecasting weather conditions in real time. The system consists of a device for reading and transmitting weather data via bluetooth, a server part for processing and transmitting data from weather services on the Internet, and a mobile application for receiving, processing and displaying information received from the device and server. The aim of the project is to create a device that could transmit weather data directly to a smartphone and a mobile application with a user-friendly interface that could receive, process and display this data. The following components were developed in this project: − device based on Arduino platform, sensor and bluetooth transmitter; − a server which was created in the Python programming language, based on the Flask microframework and using the REST architecture; − mobile application created in the Java programming language for devices with the Android operating system; The result of the development is hardware and software products that allow conveniently track current weather conditions and form a forecast for a specific area. The application has a simple and clear interface, minimum system requirements (device with Android operating system version 4.4 or higher, bluetooth module and Internet access). The monitoring mode can work without Internet access.
SINGH, PANKAJ. "DESIGNING A NAND FLASH INTERFACE I/O WHICH MEETS ALL THE SPECIFICATION OF ONFI 2.3". Thesis, 2016. http://dspace.dtu.ac.in:8080/jspui/handle/repository/14520.
Texto completoLibros sobre el tema "NAND Flash Interface"
Zhou, Clarence. NAND Flash Interface with EBI on Cortex-M Based MCUs. Microchip Technology Incorporated, 2018.
Buscar texto completoAiyappa, Rekha. NAND Flash Interface with EBI on Cortex-M Based MCUs TB. Microchip Technology Incorporated, 2018.
Buscar texto completoCapítulos de libros sobre el tema "NAND Flash Interface"
Silvagni, Andrea. "NAND DDR interface". En Inside NAND Flash Memories, 161–96. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9431-5_7.
Texto completoActas de conferencias sobre el tema "NAND Flash Interface"
Hwang Huh, ChunWoo Jeon, CheolWoo Yang, JaeSeok Park, TaeHeui Kwon, TaiKyu Kang, ChangWon Yang et al. "A 64Gb NAND Flash Memory with 800MB/s Synchronous DDR Interface". En 2012 4th IEEE International Memory Workshop (IMW). IEEE, 2012. http://dx.doi.org/10.1109/imw.2012.6213644.
Texto completoLee, Daeyeal, Ik Joon Chang, Sang-Yong Yoon, Joonsuc Jang, Dong-Su Jang, Wook-Ghee Hahn, Jong-Yeol Park et al. "A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology". En 2012 IEEE International Solid- State Circuits Conference - (ISSCC). IEEE, 2012. http://dx.doi.org/10.1109/isscc.2012.6177077.
Texto completoKim, Hyun-Jin, Jeong-Don Lim, Jang-Woo Lee, Dae-Hoon Na, Joon-Ho Shin, Chae-Hoon Kim, Seung-Woo Yu et al. "7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip". En 2015 IEEE International Solid- State Circuits Conference - (ISSCC). IEEE, 2015. http://dx.doi.org/10.1109/isscc.2015.7062964.
Texto completoOu, Yang, Nong Xiao, Fang Liu y Zhiguang Chen. "PIFCard: A High Performance Flash Card Matching the Parallelism and Latency of NAND Flash with Those of PCI-E Interface". En 2013 8th ChinaGrid Annual Conference (ChinaGrid). IEEE, 2013. http://dx.doi.org/10.1109/chinagrid.2013.18.
Texto completoNobunaga, Dean, Ebrahim Abedifard, Frankie Roohparvar, June Lee, Erwin Yu, Allahyar Vahidimowlavi, Michael Abraham et al. "A 50nm 8Gb NAND Flash Memory with 100MB/s Program Throughput and 200MB/s DDR Interface". En 2008 International Solid-State Circuits Conference - (ISSCC). IEEE, 2008. http://dx.doi.org/10.1109/isscc.2008.4523239.
Texto completoWang, Szu-Yu, Hang-Ting Lue, Tzu-Hsuan Hsu, Pei-Ying Du, Sheng-Chih Lai, Yi-Hsuan Hsiao, Shih-Ping Hong et al. "A high-endurance (≫100K) BE-SONOS NAND flash with a robust nitrided tunnel oxide/si interface". En 2010 IEEE International Reliability Physics Symposium. IEEE, 2010. http://dx.doi.org/10.1109/irps.2010.5488698.
Texto completoKim, Hyunggon, Jung-hoon Park, Ki-Tae Park, Pansuk Kwak, Ohsuk Kwon, Chulbum Kim, Younyeol Lee et al. "A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface". En 2010 IEEE International Solid- State Circuits Conference - (ISSCC). IEEE, 2010. http://dx.doi.org/10.1109/isscc.2010.5433912.
Texto completoGillingham, Peter, Jin-Ki Kim, Roland Schuetz, Hong-Beom Pyeon, HakJune Oh, Don Macdonald, Eric Choi y David Chinn. "A 256Gb NAND Flash Memory Stack with 300MB/s HLNAND Interface Chip for Point-to-Point Ring Topology". En 2011 3rd IEEE International Memory Workshop (IMW). IEEE, 2011. http://dx.doi.org/10.1109/imw.2011.5873241.
Texto completoPark, Sang-ku, Seung-Hyun Kim, Sang-Ho Lee, Do-Bin Kim, Myung-Hyun Baek y Byung-Gook Park. "Interface and oxide trap analysis at tunnel oxide of NAND flash memory with excluding the effect of floating gate". En 2016 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2016. http://dx.doi.org/10.1109/snw.2016.7577999.
Texto completoCho, Jiho, D. Chris Kang, Jongyeol Park, Sang-Wan Nam, Jung-Ho Song, Bong-Kil Jung, Jaedoeg Lyu et al. "30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface". En 2021 IEEE International Solid- State Circuits Conference (ISSCC). IEEE, 2021. http://dx.doi.org/10.1109/isscc42613.2021.9366054.
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