Artículos de revistas sobre el tema "Multi-Gate Transistors"
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Lin, Jinhan. "Advancement and Challenges of Field Effect Transistors based on Multi-gate Transistor". Journal of Physics: Conference Series 2370, n.º 1 (1 de noviembre de 2022): 012004. http://dx.doi.org/10.1088/1742-6596/2370/1/012004.
Texto completoSporea, Radu Alexandru. "(Invited) Multi-Gate Contact-Controlled Transistors". ECS Meeting Abstracts MA2021-01, n.º 32 (30 de mayo de 2021): 1058. http://dx.doi.org/10.1149/ma2021-01321058mtgabs.
Texto completoSeon, Kim, Kim y Jeon. "Analytical Current-Voltage Model for Gate-All-Around Transistor with Poly-Crystalline Silicon Channel". Electronics 8, n.º 9 (4 de septiembre de 2019): 988. http://dx.doi.org/10.3390/electronics8090988.
Texto completoZHANG, WEIQIANG, LI SU, YU ZHANG, LINFENG LI y JIANPING HU. "LOW-LEAKAGE FLIP-FLOPS BASED ON DUAL-THRESHOLD AND MULTIPLE LEAKAGE REDUCTION TECHNIQUES". Journal of Circuits, Systems and Computers 20, n.º 01 (febrero de 2011): 147–62. http://dx.doi.org/10.1142/s0218126611007128.
Texto completoMo, Zening, Zhidi Jiang y Jianping Hu. "A Novel Three-Input Field Effect Transistor with Parallel Switching Function Using T-Shaped Channel". Journal of Electrical and Computer Engineering 2022 (11 de abril de 2022): 1–12. http://dx.doi.org/10.1155/2022/1432545.
Texto completoYang, Maolong, Yao Lu, Qiancui Zhang, Zhao Han, Yichi Zhang, Maliang Liu, Ningning Zhang, Huiyong Hu y Liming Wang. "Charge transport behaviors in a multi-gated WSe2/MoS2 heterojunction". Applied Physics Letters 121, n.º 4 (25 de julio de 2022): 043501. http://dx.doi.org/10.1063/5.0097390.
Texto completoChu, Shunan. "Comparative Analysis of Optimization Schemes of Carry Look-ahead Adder". Journal of Physics: Conference Series 2290, n.º 1 (1 de junio de 2022): 012008. http://dx.doi.org/10.1088/1742-6596/2290/1/012008.
Texto completoKondo, Jun, Murali Lingalugari, Pik-Yiu Chan, Evan Heller y Faquir Jain. "Modeling and Fabrication of Quantum Dot Channel Field Effect Transistors Incorporating Quantum Dot Gate". MRS Proceedings 1551 (2013): 149–54. http://dx.doi.org/10.1557/opl.2013.899.
Texto completoBoampong, Amos Amoako, Jae-Hyeok Cho, Yoonseuk Choi y Min-Hoi Kim. "Enhancement of the Retention Characteristics in Solution-Processed Ferroelectric Memory Transistor with Dual-Gate Structure". Journal of Nanoscience and Nanotechnology 21, n.º 3 (1 de marzo de 2021): 1766–71. http://dx.doi.org/10.1166/jnn.2021.18923.
Texto completoBhadra, Debabrata. "USING PERCOLATIVE CRYSTALLINE 0.3 CUO/PVDF NANOCOMPOSITE GATE DIELECTRIC FOR FABRICATING HIGH-EFFECT MOBILITY THIN FILM TRANSISTOR OPERATING AT LOW VOLTAGE". International Journal of Advanced Research 9, n.º 11 (30 de noviembre de 2021): 1095–101. http://dx.doi.org/10.21474/ijar01/13846.
Texto completoMirdha, Pial, Murali Lingalugari, Evan K. Heller, John A. Chandy y Faquir C. Jain. "Novel Multiplexer Design Using Multi-State Spatial Wavefunction-Switched (SWS) FETs". International Journal of High Speed Electronics and Systems 24, n.º 03n04 (septiembre de 2015): 1520011. http://dx.doi.org/10.1142/s0129156415200116.
Texto completoJeong, Moon-Young, Yoon-Ha Jeong, Sung-Woo Hwang y Dae M. Kim. "Performance of Single-Electron Transistor Logic Composed of Multi-gate Single-Electron Transistors". Japanese Journal of Applied Physics 36, Part 1, No. 11 (15 de noviembre de 1997): 6706–10. http://dx.doi.org/10.1143/jjap.36.6706.
Texto completoDoucet, Jean-Christophe, Aimad Saib, Christian Mourad, François Piette, Etienne Vanzieleghem y Pierre Delatte. "HADES®: a High-Temperature Isolated Gate Driver Solution for SiC-based Multi-kW Converters". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (1 de enero de 2011): 000145–51. http://dx.doi.org/10.4071/hiten-paper3-jcdoucet.
Texto completoWan, Haoji, Xianyun Liu, Xin Su, Xincheng Ren, Shengting Luo y Qi Zhou. "Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)". Applied Sciences 12, n.º 21 (7 de noviembre de 2022): 11279. http://dx.doi.org/10.3390/app122111279.
Texto completoQian, Chuan, Ling-an Kong, Junliang Yang, Yongli Gao y Jia Sun. "Multi-gate organic neuron transistors for spatiotemporal information processing". Applied Physics Letters 110, n.º 8 (20 de febrero de 2017): 083302. http://dx.doi.org/10.1063/1.4977069.
Texto completoZhu, Li Qiang, Hui Xiao, Yang Hui Liu, Chang Jin Wan, Yi Shi y Qing Wan. "Multi-gate synergic modulation in laterally coupled synaptic transistors". Applied Physics Letters 107, n.º 14 (5 de octubre de 2015): 143502. http://dx.doi.org/10.1063/1.4932568.
Texto completoColinge, Jean-Pierre, Dimitri Lederer, Aryan Afzalian, Ran Yan, Chi-Woo Lee, Nima Dehdashti Akhavan y Weize Xiong. "Properties of Accumulation-Mode Multi-Gate Field-Effect Transistors". Japanese Journal of Applied Physics 48, n.º 3 (23 de marzo de 2009): 034502. http://dx.doi.org/10.1143/jjap.48.034502.
Texto completoLin, Yu-Ru, Yi-Yun Yang, Yu-Husien Lin, Erry Dwi Kurniawan, Mu-Shih Yeh, Lun-Chun Chen y Yug-Chun Wu. "Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors". IEEE Journal of the Electron Devices Society 6 (2018): 1187–91. http://dx.doi.org/10.1109/jeds.2018.2873008.
Texto completoSamuel, T. S. Arun y M. Karthigai Pandian. "Comparative Performance Analysis of Multi Gate Tunnel Field Effect Transistors". Journal of Nano Research 41 (mayo de 2016): 1–8. http://dx.doi.org/10.4028/www.scientific.net/jnanor.41.1.
Texto completoAbdul Tahrim, ‘Aqilah binti, Huei Chaeng Chin, Cheng Siong Lim y Michael Loong Peng Tan. "Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology". Journal of Nanomaterials 2015 (2015): 1–13. http://dx.doi.org/10.1155/2015/726175.
Texto completoMaisurah Mohd Hassan, Siti, Yusman M. Yusof, Arjuna Marzuki, Nazif Emran Farid, Siti Amalina Enche Ab Rahim y Mohd Hafis M. Ali. "RF characteristics of 0.13-μm NMOS transistors for millimeter-wave application". Microelectronics International 31, n.º 2 (29 de abril de 2014): 116–20. http://dx.doi.org/10.1108/mi-09-2013-0044.
Texto completoKwon, Hyunah, Hocheon Yoo, Masahiro Nakano, Kazuo Takimiya, Jae-Joon Kim y Jong Kyu Kim. "Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors". RSC Advances 10, n.º 4 (2020): 1910–16. http://dx.doi.org/10.1039/c9ra09195e.
Texto completoWessely, F., T. Krauss y U. Schwalke. "CMOS without doping: Multi-gate silicon-nanowire field-effect-transistors". Solid-State Electronics 70 (abril de 2012): 33–38. http://dx.doi.org/10.1016/j.sse.2011.11.011.
Texto completoErine, Catherine, Jun Ma, Giovanni Santoruvo y Elison Matioli. "Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors". IEEE Electron Device Letters 41, n.º 3 (marzo de 2020): 321–24. http://dx.doi.org/10.1109/led.2020.2967458.
Texto completoWang, Xiangjing, Li Zhu, Chunsheng Chen, Huiwu Mao, Yixin Zhu, Ying Zhu, Yang Yang, Changjin Wan y Qing Wan. "Freestanding multi-gate IZO-based neuromorphic transistors on composite electrolyte membranes". Flexible and Printed Electronics 6, n.º 4 (1 de diciembre de 2021): 044008. http://dx.doi.org/10.1088/2058-8585/ac4203.
Texto completoYu, Ji-Man, Chungryeol Lee, Joon-Kyu Han, Seong-Joo Han, Geon-Beom Lee, Sung Gap Im y Yang-Kyu Choi. "Multi-functional logic circuits composed of ultra-thin electrolyte-gated transistors with wafer-scale integration". Journal of Materials Chemistry C 9, n.º 22 (2021): 7222–27. http://dx.doi.org/10.1039/d1tc01486b.
Texto completoKondo, Jun, Pial Mirdha, Barath Parthasarathy, Pik-Yiu Chan, Bander Saman, Faquir Jain y Evan Heller. "Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon". International Journal of High Speed Electronics and Systems 27, n.º 01n02 (marzo de 2018): 1840005. http://dx.doi.org/10.1142/s0129156418400050.
Texto completoKwon, Hyuk-Min, Dae-Hyun Kim y Tae-Woo Kim. "Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-Layer Al2O3 and Bi-Layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress". Electronics 9, n.º 12 (1 de diciembre de 2020): 2039. http://dx.doi.org/10.3390/electronics9122039.
Texto completoWang, Ding, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma y Zetian Mi. "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT". Applied Physics Letters 122, n.º 9 (27 de febrero de 2023): 090601. http://dx.doi.org/10.1063/5.0143645.
Texto completoChang, P. C., K. H. Lee, Z. H. Wang y S. J. Chang. "AlGaN/GaN High Electron Mobility Transistors with Multi-MgxNy/GaN Buffer". Journal of Nanomaterials 2014 (2014): 1–4. http://dx.doi.org/10.1155/2014/623043.
Texto completoZhao, Yuhang y Jie Jiang. "Recent Progress on Neuromorphic Synapse Electronics: From Emerging Materials, Devices, to Neural Networks". Journal of Nanoscience and Nanotechnology 18, n.º 12 (1 de diciembre de 2018): 8003–15. http://dx.doi.org/10.1166/jnn.2018.16428.
Texto completoNagy, Daniel, Manuel Aldegunde, Muhammad A. Elmessary, Antonio J. García-Loureiro, Natalia Seoane y Karol Kalna. "Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness". Journal of Physics: Condensed Matter 30, n.º 14 (15 de marzo de 2018): 144006. http://dx.doi.org/10.1088/1361-648x/aab10f.
Texto completoMalik, Gul Faroz Ahmad, Mubashir Ahmad Kharadi y Farooq Ahmad Khanday. "Electrically reconfigurable logic design using multi-gate spin Field Effect Transistors". Microelectronics Journal 90 (agosto de 2019): 278–84. http://dx.doi.org/10.1016/j.mejo.2019.07.003.
Texto completoDeng, Guoqing y Chunhong Chen. "Binary Multiplication Using Hybrid MOS and Multi-Gate Single-Electron Transistors". IEEE Transactions on Very Large Scale Integration (VLSI) Systems 21, n.º 9 (septiembre de 2013): 1573–82. http://dx.doi.org/10.1109/tvlsi.2012.2217993.
Texto completoLiu, Kai, Yuan Liu, Yu-Rong Liu, Yun-Fei En y Bin Li. "Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors". Modern Physics Letters B 31, n.º 19-21 (27 de julio de 2017): 1740007. http://dx.doi.org/10.1142/s0217984917400073.
Texto completoYang, Hsin-Chia, Sung-Ching Chi y Wen-Shiang Liao. "Comparison of Fitting Current–Voltage Characteristics Curves of FinFET Transistors with Various Fixed Parameters". Applied Sciences 12, n.º 20 (18 de octubre de 2022): 10519. http://dx.doi.org/10.3390/app122010519.
Texto completoChatterjee, A., S. W. Aur, T. Niuya, P. Yang y J. A. Seitchik. "Failure in CMOS circuits induced by hot carriers in multi-gate transistors". IEEE Electron Device Letters 9, n.º 11 (noviembre de 1988): 564–66. http://dx.doi.org/10.1109/55.9277.
Texto completoNitayama, A., F. Horiguchi, H. Takato, N. Okabe, K. Sunouchi, K. Hieda y F. Masuoka. "High speed and compact CMOS circuits with multi-pillar surrounding gate transistors". IEEE Transactions on Electron Devices 36, n.º 11 (noviembre de 1989): 2605–6. http://dx.doi.org/10.1109/16.43705.
Texto completoJian, Jhang-Jie, Hsin-Ying Lee, Edward-Yi Chang y Ching-Ting Lee. "Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer". Coatings 11, n.º 12 (3 de diciembre de 2021): 1494. http://dx.doi.org/10.3390/coatings11121494.
Texto completoToral-Lopez, A., F. Pasadas, E. G. Marin, A. Medina-Rull, J. M. Gonzalez-Medina, F. G. Ruiz, D. Jiménez y A. Godoy. "Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors". Nanoscale Advances 3, n.º 8 (2021): 2377–82. http://dx.doi.org/10.1039/d0na00953a.
Texto completoYang, Ling, Hao Lu, Xuerui Niu, Meng Zhang, Chunzhou Shi, Longge Deng, Bin Hou et al. "Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact". Journal of Applied Physics 132, n.º 16 (28 de octubre de 2022): 165703. http://dx.doi.org/10.1063/5.0106827.
Texto completoSehgal, Amit, Tina Mangla, Mridula Gupta y R. S. Gupta. "Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency". Thin Solid Films 516, n.º 8 (febrero de 2008): 2162–70. http://dx.doi.org/10.1016/j.tsf.2007.06.119.
Texto completoLiu, Bo-Ying, Gao-Sheng Wang, Ming-Lang Tseng, Zhi-Gang Li y Kuo-Jui Wu. "New Energy Empowerment Using Kernel Principal Component Analysis in Insulated Gate Bipolar Transistors Module Monitoring". Sustainability 10, n.º 10 (11 de octubre de 2018): 3644. http://dx.doi.org/10.3390/su10103644.
Texto completoKushwah, Preeti, Saurabh Khandelwal y Shyam Akashe. "Multi-Threshold Voltage CMOS Design for Low-Power Half Adder Circuit". International Journal of Nanoscience 14, n.º 05n06 (octubre de 2015): 1550022. http://dx.doi.org/10.1142/s0219581x15500222.
Texto completoOpoku, C., K. F. Hoettges, M. P. Hughes, V. Stolojan, S. R. P. Silva y M. Shkunov. "Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric". Nanotechnology 24, n.º 40 (12 de septiembre de 2013): 405203. http://dx.doi.org/10.1088/0957-4484/24/40/405203.
Texto completoCho, Kyungjune, Tae-Young Kim, Woanseo Park, Juhun Park, Dongku Kim, Jingon Jang, Hyunhak Jeong, Seunghun Hong y Takhee Lee. "Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors". Nanotechnology 25, n.º 15 (18 de marzo de 2014): 155201. http://dx.doi.org/10.1088/0957-4484/25/15/155201.
Texto completoPark, Mingyo y Byung-Wook Min. "X-band T/R switch with body-floating multi-gate PDSOI NMOS transistors". Solid-State Electronics 141 (marzo de 2018): 69–73. http://dx.doi.org/10.1016/j.sse.2017.12.009.
Texto completoConde, J., I. Mejia, F. S. Aguirre-Tostado, C. Young y M. A. Quevedo-Lopez. "Design considerations for II–VI multi-gate transistors: the case of cadmium sulfide". Semiconductor Science and Technology 29, n.º 4 (20 de febrero de 2014): 045006. http://dx.doi.org/10.1088/0268-1242/29/4/045006.
Texto completoLima, Vitor Gonçalves, Guilherme Paim, Rodrigo Wuerdig, Leandro Mateus Giacomini Rocha, Leomar Da Rosa Júnior, Felipe Marques, Vinicius Valduga, Eduardo Costa, Rafael Soares y Sergio Bampi. "Enhancing Side Channel Attack-Resistance of the STTL Combining Multi-Vt Transistors with Capacitance and Current Paths Counterbalancing". Journal of Integrated Circuits and Systems 15, n.º 1 (26 de mayo de 2020): 1–11. http://dx.doi.org/10.29292/jics.v15i1.100.
Texto completoTsai, Meng-Ju, Kang-Hui Peng, Chong-Jhe Sun, Siao-Cheng Yan, Chieng-Chung Hsu, Yu-Ru Lin, Yu-Hsien Lin y Yung-Chun Wu. "Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors". IEEE Journal of the Electron Devices Society 7 (2019): 1133–39. http://dx.doi.org/10.1109/jeds.2019.2952150.
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