Artículos de revistas sobre el tema "MOSFETs"
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Funaki, Tsuyoshi, Yuki Nakano y Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation". Materials Science Forum 717-720 (mayo de 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.
Texto completoYoshioka, Hironori, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka y Hajime Okumura. "Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)". Materials Science Forum 821-823 (junio de 2015): 745–48. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.745.
Texto completoAlbrecht, Matthaeus, Tobias Erlbacher, Anton J. Bauer y Lothar Frey. "Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs". Materials Science Forum 858 (mayo de 2016): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.821.
Texto completoChaudhry, Amit y Nath Roy. "A comparative study of hole and electron inversion layer quantization in MOS structures". Serbian Journal of Electrical Engineering 7, n.º 2 (2010): 185–93. http://dx.doi.org/10.2298/sjee1002185c.
Texto completoLichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen y John W. Palmour. "Performance and Reliability of SiC Power MOSFETs". MRS Advances 1, n.º 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
Texto completoChoi, Cheol-Woong, Jae-Hyeon So, Jae-Sub Ko y Dae-Kyong Kim. "Influence Analysis of SiC MOSFET’s Parasitic Capacitance on DAB Converter Output". Electronics 12, n.º 1 (30 de diciembre de 2022): 182. http://dx.doi.org/10.3390/electronics12010182.
Texto completoHuang, W., T. Khan y T. P. Chow. "Geometry and Short Channel Effects on Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates". International Journal of High Speed Electronics and Systems 17, n.º 01 (marzo de 2007): 49–53. http://dx.doi.org/10.1142/s0129156407004230.
Texto completoAllen, Scott, Vipindas Pala, E. VanBrunt, Brett Hull, Lin Cheng, S. Ryu, Jim Richmond, M. O’Loughlin, Al Burk y J. Palmour. "Next-Generation Planar SiC MOSFETs from 900 V to 15 kV". Materials Science Forum 821-823 (junio de 2015): 701–4. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.701.
Texto completoBradford, T. y S. P. McAlister. "The use of multiple-gated MOSFETs in a simple application". Canadian Journal of Physics 74, S1 (1 de diciembre de 1996): 182–85. http://dx.doi.org/10.1139/p96-855.
Texto completoAhn, Tae Jun y Yun Seop Yu. "Interface Trap Charge Effects of Monolithic 3D Junctionless Field-Effect Transistors (JLFET) Inverter". Journal of Nanoscience and Nanotechnology 21, n.º 8 (1 de agosto de 2021): 4252–57. http://dx.doi.org/10.1166/jnn.2021.19388.
Texto completoHino, Shiro, Naruhisa Miura, Akihiko Furukawa, Shoyu Watanabe, Yukiyasu Nakao, Shuhei Nakata, Masayuki Imaizumi, Hiroaki Sumitani y Tatsuo Oomori. "SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching". Materials Science Forum 717-720 (mayo de 2012): 1097–100. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1097.
Texto completoHatta, Hideyuki, Takaaki Tominaga, Shiro Hino, Naruhisa Miura, Shingo Tomohisa y Satoshi Yamakawa. "Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET". Materials Science Forum 924 (junio de 2018): 727–30. http://dx.doi.org/10.4028/www.scientific.net/msf.924.727.
Texto completoNaik, Harsh y T. Paul Chow. "Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs". Materials Science Forum 679-680 (marzo de 2011): 595–98. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.595.
Texto completoAlbrecht, Matthaeus, Tobias Erlbacher, Anton Bauer y Lothar Frey. "Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation". Materials Science Forum 963 (julio de 2019): 827–31. http://dx.doi.org/10.4028/www.scientific.net/msf.963.827.
Texto completoNepomnyaschiy, O. V., Yu V. Krasnobaev, I. E. Sazonov y A. P. Yablonskiy. "A software-based method for energy losses decreasing in cascaded buck + boost DC-DC converter". Journal of Physics: Conference Series 2388, n.º 1 (1 de diciembre de 2022): 012025. http://dx.doi.org/10.1088/1742-6596/2388/1/012025.
Texto completoSingh, Ajay Kumar. "Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach". COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 38, n.º 2 (4 de marzo de 2019): 815–28. http://dx.doi.org/10.1108/compel-08-2018-0327.
Texto completoPetrosyants, Konstantin O., Igor A. Kharitonov y Lev M. Sambursky. "Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects". Advanced Materials Research 718-720 (julio de 2013): 750–55. http://dx.doi.org/10.4028/www.scientific.net/amr.718-720.750.
Texto completoGowthaman, Naveenbalaji y Viranjay Srivastava. "Analysis of <i>InN/La<sub>2</sub>O<sub>3</sub></i> Twosome for Double-Gate MOSFETs for Radio Frequency Applications". Materials Science Forum 1048 (4 de enero de 2022): 147–57. http://dx.doi.org/10.4028/www.scientific.net/msf.1048.147.
Texto completoMatocha, Kevin, Peter A. Losee, Arun Gowda, Eladio Delgado, Greg Dunne, Richard Beaupre y Ljubisa Stevanovic. "Performance and Reliability of SiC MOSFETs for High-Current Power Modules". Materials Science Forum 645-648 (abril de 2010): 1123–26. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1123.
Texto completoEjury, Jens. "Advanced Thermal Simulation Model for Power MOSFETs". International Symposium on Microelectronics 2013, n.º 1 (1 de enero de 2013): 000598–603. http://dx.doi.org/10.4071/isom-2013-wa64.
Texto completoKawahara, Koutarou, Shiro Hino, Koji Sadamatsu, Yukiyasu Nakao, Toshiaki Iwamatsu, Shuhei Nakata, Shingo Tomohisa y Satoshi Yamakawa. "Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs". Materials Science Forum 924 (junio de 2018): 663–66. http://dx.doi.org/10.4028/www.scientific.net/msf.924.663.
Texto completoNoborio, Masato, Yuki Negoro, Jun Suda y Tsunenobu Kimoto. "Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs". Materials Science Forum 527-529 (octubre de 2006): 1305–8. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1305.
Texto completoZou, Yuan, Jue Wang, Hongyi Xu y Hengyu Wang. "Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions". Materials 15, n.º 2 (13 de enero de 2022): 598. http://dx.doi.org/10.3390/ma15020598.
Texto completoNoborio, Masato, Jun Suda y Tsunenobu Kimoto. "1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face". Materials Science Forum 615-617 (marzo de 2009): 757–60. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.757.
Texto completoIÑIGUEZ, BENJAMIN, ROMAIN RITZENTHALER y FRANÇOIS LIME. "COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs". International Journal of High Speed Electronics and Systems 22, n.º 01 (noviembre de 2013): 1350004. http://dx.doi.org/10.1142/s0129156413500043.
Texto completoYun, Nick, Justin Lynch y Woong Je Sung. "Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-Inch Substrate Using a Single Process". Materials Science Forum 1004 (julio de 2020): 830–36. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.830.
Texto completoHino, Shiro, Masanao Ito, Naruhisa Miura, Masayuki Imaizumi y Satoshi Yamakawa. "Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFET". Materials Science Forum 778-780 (febrero de 2014): 963–66. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.963.
Texto completoAlbrecht, Matthaeus, David Pérez, R. Christian Martens, Anton J. Bauer y Tobias Erlbacher. "Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications". Materials Science Forum 1004 (julio de 2020): 1123–28. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1123.
Texto completoBottaro, Enrico, Santi Agatino Rizzo y Nunzio Salerno. "Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review". Energies 15, n.º 9 (7 de mayo de 2022): 3415. http://dx.doi.org/10.3390/en15093415.
Texto completoMin, So-Ra, Min-Su Cho, Sang-Ho Lee, Jin Park, Hee-Dae An, Geon-Uk Kim, Young-Jun Yoon et al. "Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator". Materials 15, n.º 3 (21 de enero de 2022): 819. http://dx.doi.org/10.3390/ma15030819.
Texto completoLichtenwalner, Daniel J., Akin Akturk, James McGarrity, Jim Richmond, Thomas Barbieri, Brett Hull, Dave Grider, Scott Allen y John W. Palmour. "Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout". Materials Science Forum 924 (junio de 2018): 559–62. http://dx.doi.org/10.4028/www.scientific.net/msf.924.559.
Texto completoPeruzzi, Vinicius Vono, William Cruz, Gabriel Augusto Da Silva, Eddy Simoen, Cor Claeys y Salvador Pinillos Gimenez. "Using the Hexagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments". Journal of Integrated Circuits and Systems 15, n.º 2 (10 de agosto de 2020): 1–5. http://dx.doi.org/10.29292/jics.v15i2.185.
Texto completoKonishi, Kumiko, Ryusei Fujita, Yuki Mori y Akio Shima. "Investigation of Forward Voltage Degradation due to Process-Induced Defects in 4H-SiC MOSFET". Materials Science Forum 924 (junio de 2018): 365–68. http://dx.doi.org/10.4028/www.scientific.net/msf.924.365.
Texto completoMerad, Faiza y Ahlam Guen-Bouazza. "DC performance analysis of a 20nm gate lenght n-type silicon GAA junctionless (Si JL-GAA) transistor". International Journal of Electrical and Computer Engineering (IJECE) 10, n.º 4 (1 de agosto de 2020): 4043. http://dx.doi.org/10.11591/ijece.v10i4.pp4043-4052.
Texto completoNakano, Yuki, R. Nakamura, H. Sakairi, Shuhei Mitani y T. Nakamura. "690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs". Materials Science Forum 717-720 (mayo de 2012): 1069–72. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1069.
Texto completoWu, Li-Feng, Yong Guan, Xiao-Juan Li y Jie Ma. "Anomaly Detection and Degradation Prediction of MOSFET". Mathematical Problems in Engineering 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/573980.
Texto completoHitchcock, Collin W. y T. Paul Chow. "Common-Drain Bidirectional 1200V SiC MOSFETs". Materials Science Forum 1004 (julio de 2020): 882–88. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.882.
Texto completoWatanabe, Yukimune, Noriyasu Kawana, Tsuyoshi Horikawa y Kiichi Kamimura. "Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects". Materials Science Forum 821-823 (junio de 2015): 733–36. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.733.
Texto completoKim, Tae-Woo. "Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications". Electronics 9, n.º 1 (26 de diciembre de 2019): 29. http://dx.doi.org/10.3390/electronics9010029.
Texto completoPrado, Edemar O., Pedro C. Bolsi, Hamiltom C. Sartori y José R. Pinheiro. "An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications". Energies 15, n.º 14 (20 de julio de 2022): 5244. http://dx.doi.org/10.3390/en15145244.
Texto completoZhu, Shengnan, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan y Anant K. Agarwal. "A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching". Materials 15, n.º 19 (27 de septiembre de 2022): 6690. http://dx.doi.org/10.3390/ma15196690.
Texto completoYun, Minghui, Miao Cai, Daoguo Yang, Yiren Yang, Jing Xiao y Guoqi Zhang. "Bond Wire Damage Detection Method on Discrete MOSFETs Based on Two-Port Network Measurement". Micromachines 13, n.º 7 (7 de julio de 2022): 1075. http://dx.doi.org/10.3390/mi13071075.
Texto completoPotbhare, Siddharth, Neil Goldsman, Gary Pennington, Aivars J. Lelis y J. M. McGarrity. "Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs". Materials Science Forum 556-557 (septiembre de 2007): 847–50. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.847.
Texto completoGalembeck, Egon Henrique Salerno, Denis Flandre, Christian Renaux y Salvador Pinillos Gimenez. "Digital Performance of OCTO Layout Style on SOI MOSFET at High Temperature Environment". Journal of Integrated Circuits and Systems 14, n.º 2 (25 de agosto de 2019): 1–8. http://dx.doi.org/10.29292/jics.v14i2.34.
Texto completoQiu, Guoqing, Kedi Jiang, Shengyou Xu, Xin Yang y Wei Wang. "Modeling and analysis of the characteristics of SiC MOSFET". Journal of Physics: Conference Series 2125, n.º 1 (1 de noviembre de 2021): 012051. http://dx.doi.org/10.1088/1742-6596/2125/1/012051.
Texto completoQin, Mo, Xun, Zhang y Dong. "A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System". Electronics 8, n.º 8 (26 de julio de 2019): 837. http://dx.doi.org/10.3390/electronics8080837.
Texto completoHe, Yan Jing, Hong Liang Lv, Xiao Yan Tang, Qing Wen Song, Yi Meng Zhang y Yu Ming Zhang. "Hole Trapping in the NBTI Characteristic of SiC MOSFETs". Materials Science Forum 924 (junio de 2018): 667–70. http://dx.doi.org/10.4028/www.scientific.net/msf.924.667.
Texto completoChen, Jiangui, Yan Li y Mei Liang. "A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs". Energies 12, n.º 9 (29 de abril de 2019): 1640. http://dx.doi.org/10.3390/en12091640.
Texto completoKampitsis, Georgios E., Stavros A. Papathanassiou y Stefanos N. Manias. "Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits". Materials Science Forum 856 (mayo de 2016): 362–67. http://dx.doi.org/10.4028/www.scientific.net/msf.856.362.
Texto completoOkamoto, Mitsuo, Mieko Tanaka, Tsutomu Yatsuo y Kenji Fukuda. "Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility". Materials Science Forum 527-529 (octubre de 2006): 1301–4. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1301.
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