Artículos de revistas sobre el tema "MOSFET"
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Gonçalves Filho, Luiz C. y Luiz A. P. Santos. "An electronic dosimeter for diagnostic X-ray beams based on a differential amplifier circuit with MOSFETs". EPJ Web of Conferences 288 (2023): 09001. http://dx.doi.org/10.1051/epjconf/202328809001.
Texto completoLi, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs". Applied and Computational Engineering 49, n.º 1 (22 de marzo de 2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.
Texto completoKaur Sidhu, Rajdevinder, Jagpal Singh Ubhi, Alpana Agarwal y Balwinder Raj. "Design and Comparative Analysis of Silicon and GaAs MOSFET for Low Power Applications". Journal of Nanoelectronics and Optoelectronics 18, n.º 8 (1 de agosto de 2023): 915–23. http://dx.doi.org/10.1166/jno.2023.3460.
Texto completoLuo, Qixiao. "Research on the advantages and development status of new material MOSFET". Highlights in Science, Engineering and Technology 33 (21 de febrero de 2023): 210–18. http://dx.doi.org/10.54097/hset.v33i.5313.
Texto completoChek Yee, Ooi, Mok Kai Ming y Wong Pei Voon. "DEVICE AND CIRCUIT LEVEL SIMULATION STUDY OF NOR GATE LOGIC FAMILIES DESIGNED USING NANO-MOSFETs". Platform : A Journal of Science and Technology 4, n.º 1 (31 de mayo de 2021): 73. http://dx.doi.org/10.61762/pjstvol4iss1art11064.
Texto completoAlbrecht, Matthaeus, Tobias Erlbacher, Anton J. Bauer y Lothar Frey. "Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs". Materials Science Forum 858 (mayo de 2016): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.821.
Texto completoYoshioka, Hironori, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka y Hajime Okumura. "Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)". Materials Science Forum 821-823 (junio de 2015): 745–48. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.745.
Texto completoChe, Haoming. "Simulation study on dynamic characteristics of SiC MOSFET". Theoretical and Natural Science 5, n.º 1 (25 de mayo de 2023): 805–14. http://dx.doi.org/10.54254/2753-8818/5/20230507.
Texto completoAhn, Tae Jun y Yun Seop Yu. "Interface Trap Charge Effects of Monolithic 3D Junctionless Field-Effect Transistors (JLFET) Inverter". Journal of Nanoscience and Nanotechnology 21, n.º 8 (1 de agosto de 2021): 4252–57. http://dx.doi.org/10.1166/jnn.2021.19388.
Texto completoLichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen y John W. Palmour. "Performance and Reliability of SiC Power MOSFETs". MRS Advances 1, n.º 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
Texto completoMohd Salleh, Siti NorFarah Nadia, Alhan Farhanah Abd Rahim, Nurul Syuhadah Mohd Razali, Rosfariza Radzali, Ainorkhilah Mahmood y Irni Hamiza Hamzah. "Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness". Key Engineering Materials 947 (31 de mayo de 2023): 39–45. http://dx.doi.org/10.4028/p-3a337l.
Texto completoFunaki, Tsuyoshi, Yuki Nakano y Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation". Materials Science Forum 717-720 (mayo de 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.
Texto completoChen, Jiangui, Yan Li y Mei Liang. "A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs". Energies 12, n.º 9 (29 de abril de 2019): 1640. http://dx.doi.org/10.3390/en12091640.
Texto completoKong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang y Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance". Journal of Semiconductors 44, n.º 5 (1 de mayo de 2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.
Texto completoChaudhry, Amit y Nath Roy. "A comparative study of hole and electron inversion layer quantization in MOS structures". Serbian Journal of Electrical Engineering 7, n.º 2 (2010): 185–93. http://dx.doi.org/10.2298/sjee1002185c.
Texto completoEbiike, Yuji, Toshikazu Tanioka, Masayuki Furuhashi, Ai Osawa y Masayuki Imaizumi. "Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure". Materials Science Forum 858 (mayo de 2016): 829–32. http://dx.doi.org/10.4028/www.scientific.net/msf.858.829.
Texto completoNa, Jaeyeop y Kwangsoo Kim. "A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel Diode for Improved Switching Performance". Electronics 12, n.º 1 (26 de diciembre de 2022): 92. http://dx.doi.org/10.3390/electronics12010092.
Texto completoQiu, Guoqing, Kedi Jiang, Shengyou Xu, Xin Yang y Wei Wang. "Modeling and analysis of the characteristics of SiC MOSFET". Journal of Physics: Conference Series 2125, n.º 1 (1 de noviembre de 2021): 012051. http://dx.doi.org/10.1088/1742-6596/2125/1/012051.
Texto completoSingh, Ajay Kumar. "Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach". COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 38, n.º 2 (4 de marzo de 2019): 815–28. http://dx.doi.org/10.1108/compel-08-2018-0327.
Texto completoDzakwan, Muhammad Irfan, Iwan Setiawan, Agung Warsito y Trias Andromeda. "PERANCANGAN KONVERTER ARUS SEARAH TIPE PENURUN TEGANGAN DENGAN MOSFET SINKRON DAN TANPA MOSFET SINKRON". TRANSIENT 7, n.º 1 (21 de marzo de 2018): 160. http://dx.doi.org/10.14710/transient.7.1.160-165.
Texto completoHan, Ki Jeong, B. Jayant Baliga y Woong Je Sung. "1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results". Materials Science Forum 924 (junio de 2018): 684–88. http://dx.doi.org/10.4028/www.scientific.net/msf.924.684.
Texto completoNa, Jaeyeop, Minju Kim y Kwangsoo Kim. "High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode". Energies 15, n.º 19 (22 de septiembre de 2022): 6960. http://dx.doi.org/10.3390/en15196960.
Texto completoPetrosyants, Konstantin O., Igor A. Kharitonov y Lev M. Sambursky. "Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects". Advanced Materials Research 718-720 (julio de 2013): 750–55. http://dx.doi.org/10.4028/www.scientific.net/amr.718-720.750.
Texto completoHsu, Fu Jen, Cheng Tyng Yen, Hsiang Ting Hung, Jia Wei Hu y Chih Fang Huang. "High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow V<sub>GS(on)</sub>". Key Engineering Materials 948 (6 de junio de 2023): 89–93. http://dx.doi.org/10.4028/p-tuypqj.
Texto completoPatel, Dax, Soham Sojitra, Jay Kadia, Bhavik Chaudhary y Rutu Parekh. "Comparative Study of Double Gate and Silicon on Insulator MOSFET by Varying Device Parameters". Trends in Sciences 19, n.º 7 (14 de marzo de 2022): 3216. http://dx.doi.org/10.48048/tis.2022.3216.
Texto completoDevadas, Shree Chakravarthy y Ramani Kannan. "COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs". Platform : A Journal of Engineering 5, n.º 2 (30 de junio de 2021): 23. http://dx.doi.org/10.61762/pajevol5iss2art12810.
Texto completoAllen, Scott, Vipindas Pala, E. VanBrunt, Brett Hull, Lin Cheng, S. Ryu, Jim Richmond, M. O’Loughlin, Al Burk y J. Palmour. "Next-Generation Planar SiC MOSFETs from 900 V to 15 kV". Materials Science Forum 821-823 (junio de 2015): 701–4. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.701.
Texto completoDas, Sanat, Bibek Chettri, Prasanna Karki, Bhakta Kunwar, Pronita Chettri y Bikash Sharma. "Impact of high-k metal oxide as gate dielectric on the certain electrical properties of silicon nanowire field-effect transistors: A simulation study". Facta universitatis - series: Electronics and Energetics 36, n.º 4 (2023): 553–65. http://dx.doi.org/10.2298/fuee2304553d.
Texto completoLiu, Hao, Jiaxing Wei, Zhaoxiang Wei, Siyang Liu y Longxing Shi. "Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness". Electronics 12, n.º 11 (5 de junio de 2023): 2551. http://dx.doi.org/10.3390/electronics12112551.
Texto completoKannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong y Taib B. Ibrahim. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs". International Journal of Electrical and Computer Engineering (IJECE) 9, n.º 2 (1 de abril de 2019): 1453. http://dx.doi.org/10.11591/ijece.v9i2.pp1453-1460.
Texto completoTaberkit, Amine Mohammed, Ahlam Guen-Bouazza y Benyounes Bouazza. "Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure". International Journal of Electrical and Computer Engineering (IJECE) 8, n.º 1 (1 de febrero de 2018): 421. http://dx.doi.org/10.11591/ijece.v8i1.pp421-428.
Texto completoGrabiński, Władysław, Matthias Bucher, Jean-Michel Sallese y Franc¸ois Krummenacher. "Advanced compact modeling of the deep submicron technologies". Journal of Telecommunications and Information Technology, n.º 3-4 (30 de diciembre de 2000): 31–42. http://dx.doi.org/10.26636/jtit.2000.3-4.29.
Texto completoKawahara, Koutarou, Shiro Hino, Koji Sadamatsu, Yukiyasu Nakao, Toshiaki Iwamatsu, Shuhei Nakata, Shingo Tomohisa y Satoshi Yamakawa. "Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs". Materials Science Forum 924 (junio de 2018): 663–66. http://dx.doi.org/10.4028/www.scientific.net/msf.924.663.
Texto completoCho, Geunho. "A Study on the Design Method of Hybrid MOSFET-CNTFET Based SRAM – A Secondary Publication". Journal of Electronic Research and Application 8, n.º 1 (20 de febrero de 2024): 106–12. http://dx.doi.org/10.26689/jera.v8i1.6115.
Texto completoHino, Shiro, Masanao Ito, Naruhisa Miura, Masayuki Imaizumi y Satoshi Yamakawa. "Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFET". Materials Science Forum 778-780 (febrero de 2014): 963–66. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.963.
Texto completoAtaseven, Ismail, Ilker Sahin y Salih Baris Ozturk. "Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar". Energies 16, n.º 6 (21 de marzo de 2023): 2903. http://dx.doi.org/10.3390/en16062903.
Texto completoCha, Kyuhyun y Kwangsoo Kim. "Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications". Energies 14, n.º 21 (4 de noviembre de 2021): 7305. http://dx.doi.org/10.3390/en14217305.
Texto completoLIU, WEIDONG y CHENMING HU. "BSIM3V3 MOSFET MODEL". International Journal of High Speed Electronics and Systems 09, n.º 03 (septiembre de 1998): 671–701. http://dx.doi.org/10.1142/s0129156498000294.
Texto completoEjury, Jens. "Advanced Thermal Simulation Model for Power MOSFETs". International Symposium on Microelectronics 2013, n.º 1 (1 de enero de 2013): 000598–603. http://dx.doi.org/10.4071/isom-2013-wa64.
Texto completoBakhoum, Ezzat G. y Cheng Zhang. "Field Effect Transistor with Nanoporous Gold Electrode". Micromachines 14, n.º 6 (28 de mayo de 2023): 1135. http://dx.doi.org/10.3390/mi14061135.
Texto completoVanitha, Dr D. "Comparative Analysis of Power switches MOFET and IGBT Used in Power Applications". International Journal on Recent Technologies in Mechanical and Electrical Engineering 9, n.º 5 (31 de mayo de 2022): 01–09. http://dx.doi.org/10.17762/ijrmee.v9i5.368.
Texto completoVanitha, Dr D. "Comparative Analysis of Power switches MOFET and IGBT Used in Power Applications". International Journal on Recent Technologies in Mechanical and Electrical Engineering 9, n.º 3 (23 de septiembre de 2022): 01–09. http://dx.doi.org/10.17762/ijrmee.v9i3.368.
Texto completoGreen, Ronald, Aivars J. Lelis y Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing". Materials Science Forum 717-720 (mayo de 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.
Texto completoOkada, Masakazu, Teruaki Kumazawa, Yusuke Kobayashi, Masakazu Baba y Shinsuke Harada. "Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS". Materials Science Forum 1004 (julio de 2020): 795–800. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.795.
Texto completoWu, Li-Feng, Yong Guan, Xiao-Juan Li y Jie Ma. "Anomaly Detection and Degradation Prediction of MOSFET". Mathematical Problems in Engineering 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/573980.
Texto completoGu, Jie, Qingzhu Zhang, Zhenhua Wu, Jiaxin Yao, Zhaohao Zhang, Xiaohui Zhu, Guilei Wang et al. "Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs". Nanomaterials 11, n.º 2 (26 de enero de 2021): 309. http://dx.doi.org/10.3390/nano11020309.
Texto completoAbdelmalek, N., F. Djeffal, M. Meguellati y T. Bendib. "Numerical Analysis of Nanoscale Junctionless MOSFET Including Effects of Hot-Carrier Induced Interface Charges". Advanced Materials Research 856 (diciembre de 2013): 137–41. http://dx.doi.org/10.4028/www.scientific.net/amr.856.137.
Texto completoJena, Biswajit, Sidhartha Dash, Soumya Ranjan Routray y Guru Prasad Mishra. "Inner-Gate-Engineered GAA MOSFET to Enhance the Electrostatic Integrity". Nano 14, n.º 10 (octubre de 2019): 1950128. http://dx.doi.org/10.1142/s1793292019501285.
Texto completoIbrahim, Mesfin Seid, Waseem Abbas, Muhammad Waseem, Chang Lu, Hiu Hung Lee, Jiajie Fan y Ka-Hong Loo. "Long-Term Lifetime Prediction of Power MOSFET Devices Based on LSTM and GRU Algorithms". Mathematics 11, n.º 15 (26 de julio de 2023): 3283. http://dx.doi.org/10.3390/math11153283.
Texto completoGowthaman, Naveenbalaji y Viranjay Srivastava. "Analysis of <i>InN/La<sub>2</sub>O<sub>3</sub></i> Twosome for Double-Gate MOSFETs for Radio Frequency Applications". Materials Science Forum 1048 (4 de enero de 2022): 147–57. http://dx.doi.org/10.4028/www.scientific.net/msf.1048.147.
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