Tesis sobre el tema "Monolithic sensor"
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McCann, Donald F. "A Monolithic Spiral Coil Acoustic Transduction Sensor for Chemical and Biological Analytes". Fogler Library, University of Maine, 2010. http://www.library.umaine.edu/theses/pdf/McCannDF2010.pdf.
Texto completoFernandez-Perez, Sonia. "A novel depleted monolithic active pixel sensor for future high energy physics detectors". Doctoral thesis, Universitat Autònoma de Barcelona, 2016. http://hdl.handle.net/10803/385732.
Texto completoA major upgrade of the Large Hadron Collider (LHC) called High Luminosity LHC (HL-LHC) is scheduled for 2024-2026. This will lead to an increase of the luminosity by seven times the current value and to the extension of the currently ongoing physics programme. A completely new Inner Detector for the ATLAS experiment needs to be developed to withstand the extremely harsh environment at the HL-LHC. New pixel detector concepts are being investigated as a possible candidate to the inner and outer layers of the HL-LHC ATLAS Inner Detector. The use of monolithic pixel sensors in the ATLAS Inner Tracker would lead to a new era of pixel detectors as a consequence of its many advantages with respect to the current technologies. The achievement of smaller spatial resolution, lower density, bigger production yield and throughput, and smaller budget cost are the main arguments to pursue this technology. In this context, a novel Depleted Monolithic Pixel Active Detector built on a thick film Silicon-On-Insulator has been fully investigated in this thesis. Chapter 1 introduces LHC and the ATLAS experiment as well as their foreseen scenarios at the HL-LHC upgrade. This naturally motivates the stringent requirements and challenges of the closest sub-detector to the interaction point, the Inner Detector. Chapter 2 describes the basis of a tracking detector for high energy physics applications, detailing the interactions of particles with matter to the formation of a pixel detector from a semiconductor material. Then the momentum, vertex, and impact parameter resolution of a tracking detector are calculated leading to a set of requirements for the detector design. Chapter 3 describes the radiation damage in silicon detectors whose impact to the detector performance is crucial specially for HL-LHC experiments. The radiation damage in the electronics and in the silicon bulk is treated. Chapter 4 revises the current developments and trends on pixel detectors from the well established hybrid pixel technologies to the commercial CMOS pixels. The commercial CMOS pixels section describes the current technologies being considered at ATLAS: high resistivity, high voltage CMOS (currently built as hybrid and as monolithic), and monolithic CMOS-on-SOI. The latter one composes the core of study of this thesis and is described in great detail. The final chapters are dedicated to the description of the validation programme performed to the CMOS-on-SOI technology, together with characterization methods used, measurements performed, and results analysis description. Chapter 5 focuses on the measurements performed to characterize the radiation hardness of the technology against the ionizing radiation expected in the HL-LHC ATLAS detector. The crucial charge collection properties to fulfil the ATLAS detector requirements were measured and are described in Chapter 6. These measurements include leakage current, signal-to-noise ratio, collected charge, and depletion depth on unirradiated and irradiated samples. Additionally, different techniques as radioactive sources, pion beams, and laser beams were used in order to calculate the depletion depth. Chapter 7 describes the characterization of the monolithic CMOS-on-SOI in a pion beam test. The measured charge collection, charge sharing, spatial resolution, and tracking efficiency are discussed. Within the summary, an outlook towards the future of depleted monolithic active pixel sensors on silicon-on-insulator technology for high energy physics is presented.
Rugeland, Patrik. "Applications of monolithic fiber interferometers and actively controlled fibers". Doctoral thesis, KTH, Laserfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-118750.
Texto completoSyftet med denna avhandling var att utveckla tillämpningar av monolitiska fiber komponenter samt aktivt kontrollerbara fiber. En speciell tvillingkärnefiber, även kallad ’Geminifiber’ användes för att konstruera fiber interferometrar med identisk armlängd som ej påverkas av termiska och mekaniska variationer. En bredbanding utbytarmultiplexor konstruerades genom att skriva in fiber Bragg gitter inuti grenarna på en Gemini Mach-Zehnder interferometer. Geminifibrer med interna metallelektroder användes för att konstruera en bredbandig nanosekundsnabb interferometrisk fiberomkopplare. Därtill användes en tvillingkärnefiber som en hög-temperatursensor. Även om komponenten direkt kan användas upp till 300 °C, måste den värmebehandlas för att kunna användas upp till 700 °C. Arbetet har innefattat utveckling, konstruktion och utvärdering av komponenterna parallellt med numeriska simuleringar för att analysera deras beteenden samt få insikt om de underliggande fysikaliska processerna. Avhandlingen behandlar även tillämpningar av en elektriskt styrbar fiber för att filtrera radiofrekvenser. Ett ultrasmalt fasskiftat fiber Bragg gitter skrevs in i en fiber med interna elektroder och användes som ett svepande filter för att mäta modulationsfrekvensen på en optisk bärfrekvens. Ett liknande gitter användes inuti en laserkavitet för att generera två olika våglängder samtidigt. Dessa två våglängder användes sedan för att generera en svävningsfrekvens i mikrovågsbandet. De undersökta monolitiska fiberinterferometrarna och de aktivt styrbara fibrerna erbjuder en utmärkt byggsten inom så pass skiljda områden som Mikrovågsfotonik, Telekommunikation, Sensorer samt Höghastighets-omkopplare och bör kunna användas inom många olika tillämpningar i framtiden.
QC 20130226
Alberghi, Gian Luigi <1971>. "The APSEL4D Monolithic Active Pixel Sensor and its Usage in a Single Electron Interference Experiment". Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2008. http://amsdottorato.unibo.it/6346/1/TesiConFrontespizio.pdf.
Texto completoAlberghi, Gian Luigi <1971>. "The APSEL4D Monolithic Active Pixel Sensor and its Usage in a Single Electron Interference Experiment". Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2008. http://amsdottorato.unibo.it/6346/.
Texto completoCOLLU, ALBERTO. "Development and characterisation of Monolithic Active Pixel Sensor prototypes for the upgrade of the ALICE Inner Tracking System". Doctoral thesis, Università degli Studi di Cagliari, 2015. http://hdl.handle.net/11584/266792.
Texto completoWang, Xiaoli. "DEVELOPMENT OF A NEW CHIRAL MONOLITHIC CAPILLARY COLUMN AND A FLUORESCENCE SPECTROSCOPIC STUDY OF A SELECTIVE OFF-ON PET SENSOR FOR THE DETECTION OF ZINC IONS". OpenSIUC, 2016. https://opensiuc.lib.siu.edu/dissertations/1159.
Texto completoHerkert, Adrian [Verfasser] y André [Akademischer Betreuer] Schöning. "Characterization of a Monolithic Pixel Sensor Prototype in HV-CMOS Technology for the High-Luminosity LHC / Adrian Herkert ; Betreuer: André Schöning". Heidelberg : Universitätsbibliothek Heidelberg, 2020. http://d-nb.info/1205002774/34.
Texto completoMarín, Tobón César Augusto. "PADRE pixel read-out architecture for Monolithic Active Pixel Sensor for the new ALICE Inner Tracking System in TowerJazz 180 nm technolog". Doctoral thesis, Universitat Politècnica de València, 2017. http://hdl.handle.net/10251/86154.
Texto completoEl sub detector ITS (Inner Tracking System) del detector ALICE (A Large Ion Collider Experiment) es un detector de vértice y es el detector mas cercano al punto de interacción. Se encuentra conformado por 3 tipos de subdetectores, dos capas de pixel de silicio (Silicon Pixel Detectors), 2 capas de acumulación de silicio (Silicon Drift Detectors) y 2 capas de banda de Silicio (Silicon Strip Detectors). La función primaria del ITS es identificar y rastrear las partículas de bajo momentum transversal. El detector ITS en sus dos capas más internas están equipadas con sensores de silicio basados en píxeles híbridos. Para reemplazar esta tecnología de Píxeles, el detector ITS actual será reemplazado por un nuevo detector de una sola tecnología, ampliando su resolución espacial y mejorando el rastreo de trazas. Este nuevo detector constará de siete capas de sensores de píxeles activos monolíticos (MAPS), las cuales deberán satisfacer los requerimientos de presupuesto de materiales y ser tolerantes a mayores niveles de radiación para los nuevos escenarios de incrementos de luminosidad y mayores tasas de colisiones. Los sensores MAPS que integran el sensor de imagen y los circuitos de lectura se encuentran en la misma oblea de silicio, tienen grandes ventajas en una buena resolución de posición y un bajo presupuesto material en términos de bajo coste de producción. TowerJazz ofrece la posibilidad de una cuádruple-WELL aislando los transistores pMOS que se encuentran en la misma nWELL evitando la competencia con el electrodo de recolección, permitiendo circuitos mas complejos y compactos para ser implementados dentro de la zona activa y además posee una capa epitaxial de alta resistividad. Esta tecnología proporciona una puerta de óxido muy delgado limitando el daño superficial por la radiación haciéndolo adecuado para su uso denxiii Resúmen tro del experimento ALICE. En los últimos cuatro años se ha llevado a cabo una intensiva I+D en MAPS en el marco de la actualización del ITS de ALICE. Varios prototipos a pequeña escala se han desarrollado y probado exitosamente con rayos X, fuentes radioactivas y haces de partículas. La tolerancia a la radiación de ALICE ITS es moderada con una tolerancia de irradiación TID de 700 krad y NIEL de 1 × 1013 1 MeV neqcm¿2 , MAPS es una opción viable para la actualización del ITS. La contribución original de esta tesis es la implementación de una nueva arquitectura digital de lectura de píxeles para MAPS. Esta tesis presenta un codificador asíncrono de direcciones (arquitectura basada en la supresión de ceros transmitiendo la dirección de los píxeles excitados denominada PADRE) para la arquitectura ALPIDE, el autor también hizo una contribución significativa en el ensamblaje y veri- ficación de circuitos. PADRE es la principal investigación del autor, basada en un codificador de prioridad jerárquica de cuatro entradas y es una alternativa a la arquitectura de lectura rolling-shutter. Además de los prototipos a pequeña escala, también se han desarrollado prototipos a escala completa a las necesidades del detector ITS (15 mm y 30 mm) empleando un nuevo circuito de lectura basado en la versión personalizada del circuito PADRE. El pALPIDEfs fue el primer prototipo a escala completa y se caracterizó obteniendo un tiempo de lectura de la matriz por debajo de 4 µs y un consumo de energía en el orden de 80 mWcm¿2 . En general, los resultados obtenidos representan un avance significativo de la tecnología MAPS en cuanto al consumo de energía, velocidad de lectura, tiempo de recolección de carga y tolerancia a la radiación. El sensor pALPIDE2 ha demostrado ser una opción muy atractiva para el nuevo detector ITS, satisfaciendo los requerimientos en términos de eficiencia de detección, fake-hit rate y resolución de posición, ya que su rendimiento no puede alcanzarse mediante prototipos basados en la arquitectura de lectura tradicionales como es
El subdetector ITS (Inner Tracking System) del detector ALICE (A Large Ion Collider Experiment) és un detector de vèrtex i és el detector mes proper al punt d'interacció. Es troba conformat per 3 tipus de subdetectors, dues capes de píxel de silici (Silicon Pixel Detectors), 2 capes d'acumulació de silici (Silicon Drift Detectors) i 2 capes de banda de Silici (Silicon Strip Detectors). La funció primària del ITS és identificar i rastrejar les partícules de baix moment transversal. El detector ITS en les seues dues capes més internes estan equipades amb sensors de silici basats en píxels híbrids. Per a reemplaçar aquesta tecnologia de Píxels, el detector ITS actual serà reemplaçat per un nou detector d'una sola tecnologia, ampliant la seua resolució espacial i millorant el rastreig de traces. Aquest nou detector constarà de set capes de sensors de píxels actius monolítics (MAPS), les quals hauran de satisfer els requeriments de pressupost de materials i ser tolerants a majors nivells de radiació per als nous escenaris d'increments de lluminositat i majors taxes de col·lisions. Els sensors MAPS que integren el sensor d'imatge i els circuits de lectura es troben en la mateixa hòstia de silici, tenen grans avantatges en una bona resolució de posició i un baix pressupost material en termes de baix cost de producció. TowerJazz ofereix la possibilitat d'una quàdruple-WELL aïllant els transistors pMOS que es troben en la mateixa nWELL evitant la competència amb l'elèctrode de recol·lecció, permetent circuits mes complexos i compactes per a ser implementats dins de la zona activa i a més posseeix una capa epitaxial d'alta resistivitat. Aquesta tecnologia proporciona una porta d'òxid molt prim limitant el dany superficial per la radiació fent-ho adequat per al seu ús dins de l'- experiment ALICE. En els últims quatre anys s'ha dut a terme una intensiva R+D en MAPS en el marc de l'actualització del ITS d'ALICE. Diversos prototips a petita escala s'han desenvolupat i provat ix Resum reeixidament amb rajos X, fonts radioactives i feixos de partícules. La tolerància a la radiació d'ALICE ITS és moderada amb una tolerància d'irradiació TID de 700 krad i NIEL d'1× 1013 1MeV neqcm¿2 , MAPS és una opció viable per a l'actualització del ITS. La contribució original d'aquesta tesi és la implementació d'una nova arquitectura digital de lectura de píxels per a MAPS. Aquesta tesi presenta un codificador asíncron d'adreces (arquitectura basada en la supressió de zeros transmetent l'adreça dels píxels excitats denominada PADRE) per a l'arquitectura ALPIDE, l'autor també va fer una contribució significativa en l'assemblatge i verificació de circuits. PADRE és la principal recerca de l'autor, basada en un codificador de prioritat jeràrquica de quatre entrades i és una alternativa a l'arquitectura de lectura rolling-shutter. A més dels prototips a petita escala, també s'han desenvolupat prototips a escala completa a les necessitats del detector ITS (15 mm i 30 mm) emprant un nou circuit de lectura basat en la versió personalitzada del circuit PADRE. El pALPIDEfs va ser el primer prototip a escala completa i es va caracteritzar obtenint un temps de lectura de la matriu per sota de 4 µs i un consum d'energia en l'ordre de 80 mWcm¿2 . En general, els resultats obtinguts representen un avanç significatiu de la tecnologia MAPS quant al consum d'energia, velocitat de lectura, temps de recol·lecció de càrrega i tolerància a la radiació. El sensor pALPIDE2 ha demostrat ser una opció molt atractiva per al nou detector ITS, satisfent els requeriments en termes d'eficiència de detecció, fake-hit rate i resolució de posició, ja que el seu rendiment no pot aconseguir-se mitjançant prototips basats en l'arquitectura de lectura tradicionals com és el rolling-shutter dissenyat en la mateixa tecnologia. Per aquesta raó, la R+D en els prototips ALPIDE ha continuat amb l'objectiu d'optimitza
Marín Tobón, CA. (2017). PADRE pixel read-out architecture for Monolithic Active Pixel Sensor for the new ALICE Inner Tracking System in TowerJazz 180 nm technolog [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/86154
TESIS
Chen, Zongde. "Depleted CMOS sensor development for pixel particle detectors under high intensity and high radiative dose". Thesis, Aix-Marseille, 2019. http://www.theses.fr/2019AIXM0430.
Texto completoThe Inner Tracker (ITk) system of the ATLAS experiment will be upgraded for the 2026 High Luminosity Large Hadron Collider (HL-LHC) run. The HL-LHC will operate with a center of mass energy of 14 TeV and a peak instantaneous luminosity five times higher than at present. The increased luminosity will result in roughly ten times higher radiation levels and data rates. To cope with the ATLAS requirements in terms of radiation hardness, readout speed and granularity at the HL-LHC, the replacement of the present ATLAS Inner Tracker (ITk) is needed. Two large-scale depleted CMOS sensors in the 150 nm LF-technology called LF-CPIX and LF-MONOPIX, developed in the framework of the ATLAS Inner Tracker (ITK) upgrade for High Luminosity LHC. The work presented here shows the characterization for these three prototypes, with contributions concerning the setup development, 55Fe and 90Sr source calibration, modifications of the FPGA firmware and development of test programs. A main concern was the investigation on the radiation hardness for both the electronics and the sensor parts. We will show results concerning characterizations for these prototypes in the laboratory performance at CPPM, as well as results in multiple radiation campaigns performed at the 24 GeV IRRAD proton facility at CERN, to study the effects of Non-Ionizing Energy Loss (NIEL) and Total Ionizing Dose (TID) on the prototypes
Zhang, Liang. "Development of a CMOS pixel sensor for the outer layers of the ILC vertex detector". Phd thesis, Université de Strasbourg, 2013. http://tel.archives-ouvertes.fr/tel-01068494.
Texto completoEvans, David Arwel Barrow. "The development of monolithic active pixel sensors for scientific applications". Thesis, University of Liverpool, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.420745.
Texto completoWeller, Harald. "CMOS monolithic pyroelectric infrared focal plane arrays using PVDF thin films". Thesis, Edinburgh Napier University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.323080.
Texto completoDeptuch, Grzegorz. "New Generation of Monolithic Active Pixel Sensors for Charged Particle Detection". Université Louis Pasteur (Strasbourg) (1971-2008), 2002. http://www.theses.fr/2002STR13115.
Texto completoCuervo, Diaz Pedro. "Senor monolitico de temperatura compativel com microprocessador". [s.n.], 1992. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261323.
Texto completoDissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica
Made available in DSpace on 2018-07-16T00:47:18Z (GMT). No. of bitstreams: 1 CuervoDiaz_Pedro_M.pdf: 5224988 bytes, checksum: 4a15f053014d27f9153ac2102cd35a8a (MD5) Previous issue date: 1992
Resumo: Este trabalho descreve um sensor de temperatura com saída compatível com microprocessadores em uma ampla faixa de temperaturas, sem necessidade de outro componente externo. Sua saída em frequência proporcional à temperatura, pode-se obter em dois níveis de corrente ou dois níveis de tensão, permitindo sua montagem em um encapsulamento com três terminais. No Capítulo1, com o objetivo de posicionar o trabalho no universo dos sensores. o circuito integrado projetado, são apresentados três estudos. O primeiro, um estudo comparativo a respeito dos sensores monolíticosde silício, sensores inteligentese sensores compatíveiscom microprocessadores, tentando concluir algumas definições a respeito dos mesmos. Um segundo estudo mais pontual a respeito dos sensores monolíticosde temperatura. obtendo uma classificação em três tipos, de um transistor, de tipo PTATe com referência intrínseca. E um terceiro estudo, que faz uma análise comparativa dos sensores de temperatura comerciais. No Capftulo 2 é feito um estudo do comportamento térmico dos componentes usados, que constituem a base teórica do projeto do circuito integrado apresentado neste trabalho. Também são estudados alguns efeitos que inluenciam de maneira considerável neste tipo de sensores, como o efeito Seebeck e de Dissipação de Potência na pastilha. No capítulo 3 é apresentado o projeto do circuito integrado, que é o sensor de temperatura com saída em frequência mencionado no início, partindo da descriçio do processo de fabricação usado,a descrição do: circuitosaté o layout do mesmo. No capítulo 4, são apresentados os resultados experimentais e as medições feitas sobre os protótipos, com o objetivo de caracterizar o funcionamento do sensor e validar algumas considerações teóricas feitas durante o projeto do mesmo. No fina lno Capítulo 5 são analisados os resultados obtidos, como também alguma aplicação e são propostas algumas idéias e trabalhos de interesse nesta área que surgem como consequência do presente trabalho
Abstract: Not informed.
Mestrado
Mestre em Engenharia Elétrica
Wei, Xiaomin. "Study and improvement of radiation hard monolithic active pixel sensors of charged particle tracking". Phd thesis, Université de Strasbourg, 2012. http://tel.archives-ouvertes.fr/tel-00953382.
Texto completoRicci, Riccardo. "Study of bent monolithic active pixel sensors for the ALICE inner tracking system 3". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021. http://amslaurea.unibo.it/23514/.
Texto completoLegendre, Olivier. "Conception et réalisation d'un capteur MEMS multifonctions". Phd thesis, Université Paris Sud - Paris XI, 2013. http://tel.archives-ouvertes.fr/tel-00931959.
Texto completoMULLIRI, ALICE. "Pixel Chamber: an active target with monolithic pixel sensors for precision measurements of charm and beauty". Doctoral thesis, Università degli Studi di Cagliari, 2022. http://hdl.handle.net/11584/333070.
Texto completoSIDDHANTA, SABYASACHI. "Studies On Monolithic Active Pixel Sensors and Detector Performance for the Inner Tracking System Upgrade of ALICE". Doctoral thesis, Università degli Studi di Cagliari, 2014. http://hdl.handle.net/11584/266453.
Texto completoLi, Yan. "Recherche et Développement de Capteurs Actifs Monolithiques CMOS pour la Détection de Particules Elémentaires". Paris 11, 2007. http://www.theses.fr/2007PA112118.
Texto completoIn order to develop high spatial resolution and readout speed vertex detectors for the future International Linear Collider (ILC), fast CMOS Monolithic Active Pixel Sensors (MAPS) are studied on this work. Two prototypes of MAPS, MIMOSA 8 and MIMOSA 16, based on the same micro-electronic architecture were developed in CMOS processes with different thickness of epitaxial layer. The size of pixel matrix is 32x128: 8 columns of the pixel array are readout directly with analog outputs and the other 24 columns are connected to the column level auto-zero discriminators. The Correlated Double Sampling (CDS) structures are successfully implemented inside pixel and discriminator. The photo diode type pixels with different diode sizes are used in these prototypes. With a 55Fe X ray radioactive source, the important parameters, such as Temporal Noise, Fixed Pattern Noise (FPN), Signal-to-Noise Ratio (SNR), Charge-to-Voltage conversion Factor (CVF) and Charge Collection Efficiency (CCE), are studied as function of readout speed and diode size. For MIMOSA 8, the effect of fast neutrons irradiation is also. Two beam tests campaigns were made: at DESY with a 5 GeV electrons beam and at CERN with a 180 GeV pions beam. Detection Efficiency and Spatial Resolution are studied in function of the discriminator threshold. For these two parameters, the influences of diode size and SNR of the central pixel of a cluster are also discussed. In order to improve the spatial resolution of the digital outputs, a very compact (25µmx1mm) and low consumption (300 µW) column level ADC is designed in AMS 0. 35 µm OPTO process. Based on successive approximation architecture, the auto-offset cancellation structure is integrated. A new column level auto-zero discriminator using static latch is also designed
Odziomek, Mateusz Janusz. "Colloidal Synthesis and Controlled 2D/3D Assemblies of Oxide Nanoparticles". Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEN092/document.
Texto completoNanotechnology has become a key domain of technology in XXI century. The great development of the synthetic approaches toward nanoparticles (NPs) with desired composition, size and shape expose the potential of their use as building blocks for larger scale structures. It allows fabrication of functional materials and devices directly from colloids by bottom-up approach, thus involving possibility of material design over several length scales. The process is referred to NPs assembly or self-assembly and leads to materials with varying architectures as for instance 1D (rods), 2D (films) or 3D (superlattices or gels). However most of 3D assemblies are limited to the micrometric scale and are difficult to control. Practically the only route allowing preparation of macroscopic 3D structures from NPs is their gelation and preparation of aerogels. As an alternative, NPs can be embedded in some matrix creating bulk composite material, with homogenously distributed non-aggregated NPs.Therefore, this work is devoted to development of materials with different dimensionalities for various applications from metal oxides NPs (mainly Y3Al5O12:Ce and Li4Ti5O12). The first part describes the syntheses of YAG:Ce and LTO NPs by glycothermal approach. In the case of YAG:Ce, the reactions conditions were appropriately adjusted in order to obtain non-aggregated nanocrystals (NCs) of few nanometers. The colloidal solution containing such NCs with different concentration was used for fabrication of thin films with controllable thickness by spin-coating method. Contrary, the synthesis of LTO led to aggregated NPs with hierarchical structuration which was highly beneficial for Li-ion batteries. The large surface area and porosity ensured efficient exchange of Li ions between electrolyte and anode material. Furthermore, the YAG:Ce NCs were used for preparation of macroscopic monoliths with high porosity and transparency. For that reason, colloidal solution of NCs was gelled by the abrupt change of solvent dielectric constant. The gels were further supercritically dried yielding YAG:Ce NPs-based aerogels with high porosity and transparency. The same approach turned o be appropriate for other systems like GdF3 or hybrid aerogels of YAG:Ce and GdF3.Alternatively, YAG:Ce NPs were incorporated into silica aerogels forming robust macroscopic and highly transparent aerogels exhibiting properties of incorporated NPs. They served for novel type of sensors for low-energy ionizing radiation in liquids and gases. Their high porosity assured well-developed contact between radioactive emitter and the scintillator ensuring good harvesting of radioactive energy
Paret, Jean-Marc. "Étude et mise au point de la méthodologie de conception et de fabrication collective de microsystèmes sur silicium". Grenoble INPG, 1997. http://www.theses.fr/1997INPG0015.
Texto completoHirono, Toko [Verfasser]. "Development of depleted monolithic active pixel sensors for high rate and high radiation experiments at HL-LHC / Toko Hirono". Bonn : Universitäts- und Landesbibliothek Bonn, 2019. http://d-nb.info/1191832015/34.
Texto completoWalk, Christian [Verfasser] y Holger [Akademischer Betreuer] Vogt. "Development of a MEMS Technology for the Monolithic Post-CMOS Integration of Capacitive Pressure Sensors / Christian Walk ; Betreuer: Holger Vogt". Duisburg, 2019. http://d-nb.info/1191691349/34.
Texto completoKremastiotis, Iraklis [Verfasser] y I. [Akademischer Betreuer] Peric. "Implementation and Characterisation of Monolithic CMOS Pixel Sensors for the CLIC Vertex and Tracking Detectors / Iraklis Kremastiotis ; Betreuer: I. Peric". Karlsruhe : KIT-Bibliothek, 2020. http://d-nb.info/1206646764/34.
Texto completoHuth, Lennart [Verfasser] y André [Akademischer Betreuer] Schöning. "A High Rate Testbeam Data Acquisition System and Characterization of High Voltage Monolithic Active Pixel Sensors / Lennart Huth ; Betreuer: André Schöning". Heidelberg : Universitätsbibliothek Heidelberg, 2019. http://d-nb.info/117704532X/34.
Texto completoDeveaux, Michael. "Development of fast and radiation hard Monolithic Active Pixel Sensors (MAPS) optimized for open charm meson detection with the CBM experiment". Université Louis Pasteur (Strasbourg) (1971-2008), 2008. https://publication-theses.unistra.fr/public/theses_doctorat/2008/DEVEAUX_Michael_2008.pdf.
Texto completoThe Compressed Baryonic Matter experiment (CBM) will investigate heavy ion collisions at beam energies between 10 and 40 AGeV in order to explore the nuclear matter phase diagram in the high baryon density region. For a first time, open charm mesons (D0 and D±) will be used as probe for the nuclear fireball. Reconstructing them requires a very thin (few 0. 1 % X0 per layer) micro vertex detector (MVD) with pixel sensors featuring excellent spatial resolution (few µm) and substantial radiation hardness. This work studies whether (and how) an MVD based on the novel Monolithic Active Pixel Sensors (MAPS) can the reach the performance needed. For this purpose, the precise requirements on the MVD in terms of material budget, cooling, time resolution and radiation hardness were estimated. Extensive R&D studies on MAPS allowed establishing their performances in particular in the field of radiation tolerance and to improve this tolerance by one order of magnitude. The information obtained was used as input for a GEANT simulation which demonstrated the feasibility of open charm physics with the proposed detector concept
Ayadi, Yosri. "3D integration of single electron transistors in the Back-End-Of-Line of 28 nm CMOS technology for the development of ultra-low power sensors". Thèse, Université de Sherbrooke, 2016. http://hdl.handle.net/11143/10122.
Texto completoAbstract : The need of integration of new functionalities on mobile and autonomous electronic systems has to take into account all the problematic of heterogeneity together with energy consumption and thermal dissipation. In this context, all the sensing or memory components added to the CMOS (Complementary Metal Oxide Semiconductor) processing units have to respect drastic supply energy requirements. Smart mobile systems already incorporate a large number of embedded sensing components such as accelerometers, temperature sensors and infrared detectors. However, up to now, chemical sensors have not been fully integrated in compact systems on chips. Integration of gas sensors is limited since most used and reliable gas sensors, semiconducting metal oxide resistors and catalytic metal oxide semiconductor- field effect transistors (MOSFETs), are generally operated at high temperatures, 200–500 °C and 140–200° C, respectively. The suspended gate-field effect transistor (SG-FET)-based gas sensors offer advantages of detecting chemisorbed, as well as physisorbed gas molecules and to operate at room temperature or slightly above it. However they present integration limitations due to the implementation of a suspended gate electrode and augmented channel width in order to overcome poor transconductance due to the very low capacitance across the airgap. Double gate-transistors are of great interest for FET-based gas sensing since one functionalized gate would be dedicated for capacitively coupling of gas induced charges and the other one is used to bias the transistor, without need of airgap structure. This work discusses the integration of double gate-transistors with CMOS devices for highly sensitive and ultra-low power gas sensing applications. The use of single electron transistors (SETs) is of great interest for gas sensing applications because of their key properties, which are its ultra-high charge sensitivity and the ultra-low power consumption and dissipation, inherent to the fundamental of their operation based on the transport of a reduced number of charges. Therefore, the work presented in this thesis is focused on the proof of concept of 3D monolithic integration of SETs on CMOS technology for high sensitivity and ultra-low power gas sensing functionality. The proposed approach is to integrate metallic double gate-single electron transistors (DG-SETs) in the Back-End-Of-Line (BEOL) of CMOS circuits (within the CMOS interconnect layers) using the nanodamascene process. We take advantage of the hyper sensitivity of the SET to electric charges as well from CMOS circuits for high-speed signal processing. Fully depleted-silicon on insulator (FD-SOI) MOSFETs are very attractive devices for gas sensing due to their amplification capability when operated in the sub-threshold regime which is the strongest asset of these devices with respect to the FET-based gas sensor technology. In addition these devices are of a high interest in terms of integration density due to their small size. Moreover FD-SOI FETs is a mature and well-modelled technology. We focus on the functionalization of the front gate of a FD-SOI MOSFET as a demonstration of the DGtransistor- based gas sensor. Kelvin probe has been the privileged technique for the investigation of FET-based gas sensors’ sensitive material via measuring the work function variation induced by gas species adsorption. In this work an alternative technique to investigate gas sensitivity of materials suitable for implementation in DG-FET-based gas sensors, based on measurement of the surface charge induced by gas species adsorption is discussed. In order to increase the specific surface of the sensing electrode, a novel concept of functionalized gate surface texturing suitable for FET-based gas sensors are presented. It is based on the spray coating of a multi-walled-carbon nanotubes (MW-CNTs) suspension to deposit a MW-CNT porous network as a conducting frame for the sensing material. The main objective of this Ph.D. thesis can be divided into 4 parts: (1) modelling and simulation of a DG-SET and a FD-SOI MOSFET-based gas sensor response, and estimation of the sensitivity as well as the power consumption; (2) investigation of Pt sensitivity to hydrogen by surface charge measurement technique and development of the sensing electrode surface texturing process with CNT networks; (3) development and optimization of the DG-SET integration process in the BEOL of a CMOS substrate, and (4) FD-SOI MOSFET functionalization with Pt for H[subscript 2] sensing.
Dalla, Marco. "Studies of performance of pixel detectors in BCD8 and TowerJazz technologies for the ATLAS experiment at HL-LHC". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2018. http://amslaurea.unibo.it/16328/.
Texto completoEhrler, Felix Michael [Verfasser] y M. [Akademischer Betreuer] Weber. "Charakterisierung von monolithischen HV-CMOS-Pixelsensoren für Teilchenphysikexperimente = Characterization of monolithic HV-CMOS pixel sensors for particle physics experiments / Felix Michael Ehrler ; Betreuer: M. Weber". Karlsruhe : KIT-Bibliothek, 2021. http://d-nb.info/1238148409/34.
Texto completoHouha, Jan. "Stavebně technologický projekt přístavby Senior centrum Blansko". Master's thesis, Vysoké učení technické v Brně. Fakulta stavební, 2017. http://www.nusl.cz/ntk/nusl-265225.
Texto completoLišková, Jana. "Penzion pro seniory". Master's thesis, Vysoké učení technické v Brně. Fakulta stavební, 2013. http://www.nusl.cz/ntk/nusl-226383.
Texto completoWang, Jia. "Design of a low noise, limited area and full on-chip power management for CMOS pixel sensors in high energy physics experiments". Phd thesis, Université de Strasbourg, 2012. http://tel.archives-ouvertes.fr/tel-00758209.
Texto completoBartošová, Zlata. "Stavebně technologický projekt pro Domov seniorů". Master's thesis, Vysoké učení technické v Brně. Fakulta stavební, 2012. http://www.nusl.cz/ntk/nusl-225382.
Texto completoWeber, Tobias [Verfasser]. "High-voltage monolithic active pixel sensors for the PANDA luminosity detector and search for the decay e+ e- -> eta c eta pi+ pi- at center of mass energies between 4.23-4.36 GeV at BESIII / Tobias Weber". Mainz : Universitätsbibliothek Mainz, 2016. http://d-nb.info/1117728226/34.
Texto completoPozzobon, Nicola. "A Level 1 Tracking Trigger for the CMS Experiment at the LHC Phase 2 Luminosity Upgrade". Doctoral thesis, Università degli studi di Padova, 2011. http://hdl.handle.net/11577/3422049.
Texto completoDurante il secondo decennio di operazioni al Large Hadron Collider, a partire dall'anno 2020, è previsto un notevole aumento della luminosità istantanea del collisionatore, di un ordine di grandezza superiore rispetto a quella di progetto. Questa luminosità presenta numeose sfide per gli esperimenti a LHC. Il Tracciatore attualmente impiegato nell'esperimento Compact Muon Solenoid dovrà essere rimpiazzato con un sistema in grado di garantire una tracciatura di qualità eccellente ad alte luminosità e, allo stesso tempo, fornire informazioni utili per l'attuale "Livello 0" del sistema di Trigger a CMS, alla frequenza di collisioni di 40 MHz. Le richieste minime per un Trigger basato sul Tracciatore sono la capacità di confermare la presenza di tracce ad alto pT associate a Trigger di Livello 0 ottenuti con i Calorimetri o i rivelatori di muoni. La capacità di fornire criteri efficaci di isolazione può essere ulteriormente richiesa e in ogni caso migliorerebbe significativamente le prestazioni del Trigger. Il rateo dei dati associati con la generazione nel Tracciatore di informazione di Trigger può essere mantenuto in una larghezza di banda sufficientemente maneggevole richiedendo che i moduli sensitivi siano in grado di ridurre localmente i dati. I principali candidati per una simile riduzione locale del rateo i dati sono caratterizzati dalla capacità di fornire la direzione della traccia nel piano trasverso, oltre alla sua posizione, da cui poter dedurre la quantità di moto della traccia stessa. Questi "pT-modules" trasmetterebbero di conseguenza al Trigger di primo livello degli abbozzi di traccia ("stub") generati da particelle con pT al di sopra di 2 GeV/c. La scelta di una simile soglia permetterebbe la riduzione dei dati di un fattore superiore a 10, consentendo quindi un rateo facilmente tollerabile. I moduli di Trigger possono essere realizzati con due sensori di silicio paralleli leggermente separati, caratterizzati da una risoluzione sulla misura del singolo punto d'impatto tale che gli stub, ottenuti tramite correlazione tra i punti misurati nel modulo, possano fornire un'adeguata misura della direzione della traccia, nonostante il braccio di leva sia dell'ordine del millimetro. Un'ipotetica configurazione per il Tracciatore, composto da "lunghi barili", che prevede un Tracciatore esterno realizzato totalmente con moduli di Trigger, è stata proposta. Essa è particolarmente flessibile negli studi di simulazione per il Trigger realizzato con il Tracciatore giacché consente di combinare tra loro, tramite proiezioni geometriche, le informazioni provenienti da diversi strati del Tracciatore. Pertanto è un campo di prova per confrontare le prestazioni di diverse concezioni e diverse configurazioni. Il Tracciatore proposto permette anche la generazione di oggetti più articolati degli stub per il Trigger, come ad esempio le "tracklet", che consistono in coppie di stub opportunamente associate tra loro, le quali possono a loro volta essere usate come punto di partenza per la costruzione di Tracce di Primo Livello. La scelta di moduli di Trigger realizzati con sensori accoppiati è rafforzata da risultati recenti ottenuti con dei prototipi innovativi di rivelatori a Pixel Monolitici durante dei test sotto fascio riportati in questa tesi. Lo sviluppo di simulazioni per un Trigger con il Tracciatore è anch'esso presentato come un significativo progresso verso la progettazione di un nuovo Tracciatore realistico e capace di fornire informazioni utili per il Trigger. Particolarmente impegnativo è lo sforzo per un Trigger che selezioni i leptoni tau prodotti in numerosi processi rari di interesse per gli esperimenti a LHC. Le prestazioni di un Trigger con il Tracciatore su stati finali contenenti leptoni tau saranno fondamentali a luminosità molto elevate e sono illustrate alla fine di questo documento, come naturale prosecuzione del lavoro descritto.
Hasoň, Václav. "Objekt občanské vybavenosti". Master's thesis, Vysoké učení technické v Brně. Fakulta stavební, 2020. http://www.nusl.cz/ntk/nusl-409999.
Texto completoLin, Chong-Yang y 林崇仰. "Monolithic MEMS Resonator-Based Environmental Temperature Sensor Design". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/34272679062978087313.
Texto completo國立交通大學
電子研究所
105
A Micro Electro Mechanical Systems (MEMS) resonator that can be manufactured and monolithically integrated in the ASIC-compatible 0.18μm 1-poly-6-metal (1P6M) standard complementary metal-oxide-semiconductor (CMOS) process is proposed for measuring environmental temperature. It could be monolithically integrated with CMOS driving and readout circuitry without the need of any post-processing after fabrication from the foundry. The resonant frequency shifts designed proportionally to temperature variation. The phase locked loop (PLL) circuitry provides a stable clock to drive the resonator, and it can track the resonant frequency shifts due to the environmental temperature changes. A high-gain amplitude enhancement circuit is presented to transfer the small current from the resonator output to square wave voltage for the phase frequency detector of PLL proper functioning. The measurement results of the proposed resonator have been demonstrated that the maximum displacement was 648nm when the frequency was 38.66kHz under pressure being 760torr. The calculated Q-factor was 183, and the overlap area of comb fingers is larger than 407.6μm2, which represents more than 92% initial capacitance. The co-simulation result of the proposed resonator-based environmental temperature sensor has been demonstrated with a sensitivity -5.7Hz/°C (-143ppm/°C) or -0.228mV/°C and resolution 0.67°C in a temperature range from -40°C to 120°C. The power consumption of the PLL is 17.23μW and overall readout circuit is only 190.36μW.
Sheng-RenChiu y 邱勝任. "Monolithic 6-DoF MEMS Inertial Sensor with Integrated Electronics". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/04751815435265745389.
Texto completo國立成功大學
微電子工程研究所
102
This dissertation investigates a monolithic 6-DoF MEMS inertial sensor fabricated by SOG(Silicon On Glass) process together with a fully integrated readout/control circuit fabricated by standard CMOS process for application into the linear acceleration and angular rate measurement. There are three parts in this dissertation. In the first part, a monolithic 6-DoF MEMS inertial sensor including a tri-axis accelerometer and a tri-axis gyroscope is fabricated by SOG(Silicon On Glass) bulk micromachining process with DRIE (Deep Reactive-ion-etchant).For the optimum design for both size and performance considerations, the tri-axis accelerometer is designed under the minimum angular momentum consideration while the tri-axis gyroscope is designed under the conservation of momentum and distributed and differential for sensing mechanism for robustness. The element size of the monolithic 6-DoF inertial sensor is 2.1mm x 2.1mm, and the structure of the inertial sensor is hermetic sealed with the silicon cavity by glass frit process under 2 m bar condition. The quality factor of the gyroscope resonator is about 2000. The second part gives the detail design consideration of the fully integrated readout/control circuit of the MEMS 6-DoF inertial senor. In the accelerometer readout circuit design, a first-order Sigma-Delta modulator is used as analog front end. A calibration DAC (CALDAC) for sensor gain and offset trimming is also adopted. In the gyroscope system, the designed drive/readout ASIC consists of a driving-loop circuit to drive the resonator into resonance, a trans-impedance amplifier (TIA) to detect the Coriolis signal as well as a gain/offset trimming ADC to adjust this output. The ASIC is fabricated by tsmc 0.25um 1P5M process and th chip size is 2.5 x 2.5 mm2. The third part described the measurement results of the 6-DoF inertial measurement unit. The results show that the sensitivities and cross-axis sensitivities of the x/y/z tri-axis accelerometer are 1.442V/g; 0.03%, 1.241V/g; 0.21% and 1.434V/g; 0.21%, respectively. The sensitivities of the x/y/z tri-axis gyroscope are 1.62mV/DPS, 1.67mV/DPS and 1.67mV/DPS, respectively. The power consumption is about 2.5mA under 3V operation.
Lin, Ping-Yuan y 林炳原. "Study on the Monolithic Sensor and Front-End Circuit Design". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/51900598053619945118.
Texto completo國立暨南國際大學
電機工程學系
90
Study on the Monolithic Sensor and Front-End Circuit Design Student: Ping-Yuan Lin Advisor: Tai-Ping Sun ABSTRACT In this thesis, we have used the CMOS standard process to design (N+_Psub、P+_Nwell、Nwell_Psub) three different type photodiode's structures. The five different emitter area's transistors for temperature sensors were fabricated by the CMOS standard process. We have also measured two kinds of sensor's properties respectively. After a series of experimental measurements, the best photodiode can be gotten. Considering the design cost and the optimum area, a good temperature sensor of the transistor which the area of emitter is 5μm×5μm. However, the CMOS standard process of the UMC 0.5μm 2P2M was employed to fabricate a low voltage, low noise operational amplifier to combine with the photo-sensor. We have also used a small area T-type resistance to replace a large area feedback resistance of a transimpedance amplifier. In this study the lux meter measurement system which can detect the photo-current about 1nA in a single chip will be accomplished. Keywords:CMOS standard process、photodiode、temperature sensor、noise、operational amplifier、transimpedance amplifier、lux meter
Chuang, Po-Chun y 莊博鈞. "Monolithic MEMS Resonator Based Pressure Sensor Design and Readout Circuit". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/22438192701873720731.
Texto completo國立交通大學
電子研究所
105
A monolithic MEMS resonator based pressure sensor fabricated on the 0.18µm 1-poly-6-metal standard CMOS-MEMS process and monolithically integrated with TIA(trans-impedance amplifier) readout circuitry has been developed. Dependence of the quality factor and ambient pressures are well known to resonator designers and it will be feasible to integrate a readout circuitry of quality factor to detect ambient pressure. An electrostatic-actuated resonator generate current by capacitance changing with different quality factors. The TIA circuit converts current signal by resonator, then the output signal is converted from resonating waveform into voltage level by the envelope detector for ambient pressure estimation. By measuring the sample resonator, the air pressure changes from 100 Pa to 1600 Pa, the Q factor will change from 2566 to 452 with resonant frequency 15.4 kHz and the readout circuit is designed accordingly. The system power consumption is 332.82 µW with 1.8 V power supply and sensitivity is 0.0203 mV/Q.
Kuo, Fu-Yen y 郭富彥. "Monolithic Multi-sensor Design with Resonator-Based CMOS MEMS Structures". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/769gtx.
Texto completo國立交通大學
電子研究所
106
This thesis presents an experimentally-verified analytical model of temperature-dependent yield effects on the curvatures of composite beam structures used in CMOS MEMS. The temperature-dependent effects of a thermal process on the curvatures of composite beams can be predicted by extracting key parameters from the measured curvatures of a limited number of CMOS MEMS composite-layer combinations. The effects due to thermal history in MEMS packaging, which change the characteristics of beam curvatures due to material yield, are further analyzed. The models are verified with measured results from beam structures fabricated by an ASIC-compatible 0.18 m 1P6M CMOS MEMS process using a white light interferometer. These models can be applied in EDA tools to provide good prediction of temperature-dependent properties related to CMOS MEMS beam curvature, such as sensing capacitance, for monolithic sensor SOC design. This thesis also presents the monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69W MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources. In addition, we demonstrated a resonator-based MEMS architecture for multi-sensor SOC applications. A newly developed 0.18m 1P6M CMOS ASIC/MEMS process was adopted to integrate MEMS sensor and circuits monolithically. By using resonators as the building blocks, multiple MEMS sensors including environmental temperature sensor, ambient pressure sensor, accelerometer as well as gyro sensor can be monolithically implemented with the readout circuits by the single standard ASIC/MEMS process without off-fab pre/post processes. The proposed architecture enables compact and innovative sentient-assisted SOC design for the emerging IOT applications.
Hsiao, Meng-Yueh y 蕭孟岳. "A Monolithic Neural Sensor Integrated with Flexible Surface and Depth Electrode Array". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/n92529.
Texto completo國立交通大學
電機工程學系
103
This work presents a monolithic neural sensor integrated with an electrocorticographic (ECoG) electrode and micro-probe array. The polyimide (PI)-based ECoG electrode and micro-probe array were fabricated using a customized Micro Electro Mechanical Systems PI process. Proposed sensor can record 4-channel ECoG signals and 14-channel local-field potential signals simultaneously. The selected materials of the fabricated sensor are biocompatible and flexible in order to minimize the damage in long-term implantation. The structure strength has been proof in agar and rat brain for efficient penetration. The impedance of the ECoG electrodes and micro-probes range at 4k-6kΩ and 118k-168kΩ, respectively, and are both fully characterized for neural signal recording. Successful in vivo recordings demonstrated the feasibility of proposed sensor in an awake rat. Due to bending problem of the PI-based micro-probe array, it is hard to penetrate into the desired position of the rat brain. This work also presents a new silicon (Si)-based probe, which greatly reduces the thickness of traditional Si-based probe to 26 µm and possesses enough rigidity for tissue penetration. Successful in vivo recordings for LPF in an awake rat. In the auditory stimulus experiments, the proposed Si-based probe penetrated into the primary auditory cortex of rat brain. Under different frequency (10 kHz and 16 kHz) and different strength (-40dB and 0 dB) of auditory stimulus, the probe can successfully record the auditory response from each channels. By using independent component analysis, the sources of cortex response to auditory stimulus were also successfully derived from the independent components by using back project method.
Cheng, Chin-Yu y 鄭欽宇. "Design of a Monolithic Optoelectronic Displacement Sensor System and Research on Its Characteristic". Thesis, 2004. http://ndltd.ncl.edu.tw/handle/09997135205570325909.
Texto completo國立臺灣大學
機械工程學研究所
92
The aim of this thesis is to develop an optoelectronic displacement sensor system for small-scale objects. Besides the compactness of the system, the high-speed and precision displacement sensing performances are also the important points of this thesis. To make a high compactness and precision system possible, the system will be made in the form of monolithic type to make sure that all elements are set stably and precisely. In the developing process, choosing the suitable small-diameter laser source according to the system request is the first thing. The laser beam will be transmitted to the displacement sensing area by the appropriate setup of optical elements. The light intensity of the laser beam and the bright/dark area will vary with the displacement of the sensing object, and be sensed by the optoelectronic sensors to output the corresponding electrical analog signal. To improve the precision of the senor system and reduce the interference of the random noise, the differential measurement method is employed. The bright area that varies with the displacement of the sensing object will be projected onto both optoelectronic sensors by using a prism. The differential output signal of the two sensors is considered to be the output signal of the displacement sensor system. Besides the static and dynamic characteristics test of the sensor system, the system error will also be detail conferred. In the system dynamic test, the result will be compared with the data of the LVDT displacement measurement system to check the performance characteristics.
Hong, Ping-Hsiu y 洪立秉修. "Monolithic Integration of CMOS Humidity and Pressure/Temperature Sensor for Environment Sensing Hub". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/6qu56j.
Texto completo國立清華大學
動力機械工程學系
106
This research presents a monolithically integrated environment sensing hub utilizing the TSMC CMOS platform. This study first focuses on the structure design of humidity sensors, with the intention of improving the sensors’ response time and sensitivity, then in order to fully utilize the CMOS platform, a pressure sensor and a temperature detector are integrated monolithically on the same chip, the core concept of this research is to fabricate all four sensors at once, without the fabrication process inteferring each other. Experimental measurements will be operated seperately once all the fabrication processes are completed, experiment results show the performance of each device are all above average, proving the feasibility of monolithic integration upon the CMOS platform.
Huang, I.-Yu y 黃義佑. "A Monolithic High Performance ISFET pH-Sensor with Integrated Miniaturized Solid-State Reference Electrode". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/15850377326352499333.
Texto completo國立清華大學
電機工程學系
90
Although the ion-sensitive field-effect transistor (ISFET) concept has existed for over 30 years, practical applications are still emerging very slowly. In this thesis, we will point out some practical problems that were the limiting factors in the breakthrough of commercialization of ISFET and try to study and provide the appropriate solutions. Three critical issues of ISFET are : (1) The lack of a suitable ion-sensitive membrane as the ISFET gate material with sufficient sensitivity and stability; (2) the encapsulation of the electronics functions from exposure to the sample liquids; and (3) the need of a bulky conventional reference electrode is not compatible to miniaturized chip and not convenient for in-vivo biomedical applications. Although each of the above-mentioned problems has been investigated respectively, very rare researchers have offered a total solution to solve all of those issues at the same time. In this dissertation, a monolithic ISFET hydrogen ion (pH) sensor with an integrated miniaturized solid-state reference electrode and electrical backside contacts structure will be presented and its electrochemical high performance also will be verified. Firstly, we will compare the sensing characteristics of two inorganic insulators, silicon nitride and tantalum oxide, as the ion-sensitive membranes of pH-ISFET. According to the results of their respectively fabricated pH sensors characterized in standard pH solution, the tantalum oxide (Ta2O5) insulator based ISFET has higher linear pH sensitivity (56-57mV/pH) and lower drift level than silicon nitride (Si3N4) insulator based ISFETs. These results agree very well with the theoretical value of the site-binding theory. Secondly, backside electrical contacts were constructed to facilitate its protection from chemical attack by the test solutions. These backside electrical contacts were fabricated using silicon bulk micromachining with P+ etching stop and double-side alignment lithography techniques. Finally, to eliminate the need of a separate reference electrode and facilitate the use of ion-sensitive field-effect transistor (ISFET), an all-solid-state reference electrode integrated with ISFET in one chip has been developed. A novel agarose-stabilized KCl-gel membrane was introduced to serve both as a polymer-supported solid reference electrolyte and an ionic bridge for Ti/Pd/Ag/AgCl electrode. This new planar integrated reference electrode has not only eliminated the fabrication problems associated with the filling of the reference liquid electrolyte into a miniature micromachined cavity, but also has many excellent performance characteristics with respect to the reference potential stability and its insensitivity to the changes of pH values and Cl- ion concentrations in the sample solutions under test. Calibrated against the commercial macro Ag/AgCl reference electrode the new miniaturized reference electrode shows its cell potential variation was ±0.9~1.4mV (equivalent to about ±0.015~0.023pH) in one hour, less than 2mV variation over pH4 to pH10, and almost insensitive to changes in Cl- ion concentration (about 0.02~0.25mV/pKCl). The planar solid-state reference electrode also shows a very small offset voltage of 0.45mV and reproducible to within 0.5mV among the batch fabricated electrodes. ISFET pH-sensor of SiO2/Ta2O5 gate insulator and through chip backside electrical connections with integrated all-solid-state reference electrode, characterized in standard pH solutions show a linear sensitivity of 56mV/pH, these results agree very well with the theoretical value of 59mV/pH. Dynamic response and hysteresis characteristics of the pH-sensor are also studied and discussed.
Tien, Chu-Chien y 田居正. "Implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard CMOS". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/28378763012686999772.
Texto completo國立交通大學
電子工程學系 電子研究所
101
A monolithic accelerometer and magnetometer with integrated capacitance to voltage readout circuit in 0.18um CMOS MEMS process is proposed. The sensing range of the combo sensor is ±5g and ±70µT. The variation of the capacitance is ±4.5fF and ±0.63fF. The sensitivity of the combo is 0.9fF/g and 9aF/µT respectively. The following circuit is a capacitance to voltage readout circuit. The sensitivity of the full system is 80mV/g and 5.6mV/µT. The measurement result of the readout circuit has sensitivity of 1.3mV/aF and power consumption of 372µW. The measurement result of the magnetometer has sensitivity of 8.7nm/µT*mA.
Correia, Ricardo João Luís Marques. "Passive backscatter wireless sensor with wireless power transmission for IoT applications". Doctoral thesis, 2019. http://hdl.handle.net/10773/29173.
Texto completoAtualmente, as redes de sensores sem fios dependem da duração da bateria e,deste modo, existe um interesse renovado em criar um esquema de rede de sensores passivos na área de internet das coisas e sistemas de redes de sensores sem fios relacionados com o espaço. Os desafios do futuro das comunicações de rádio têm uma dupla evolução, sendo um o baixo consumo de energia e, outro, a adaptação e o uso inteligente dos recursos disponíveis. Rádios diferentes dos convencionais devem ser usados para reduzir o consumo de energia e devem adaptar-se ao ambiente de forma inteligente e eficiente, de modo a que este use a menor quantidade de energia possível para estabelecer a comunicação. Esta tese incide sobre o desenvolvimento de sensores passivos baseados em comunicação de baixo consumo energético (backscatter) com recurso a transmissão de energia sem fios de modo a que possam ser usados em diferentes aplicações inseridas na internet das coisas. Nesse sentido, várias modulações de alta ordem para a comunicação backscatter serão exploradas e propostas com o objectivo de aumentar a taxa de transmissão de dados. Além disso, os sensores precisam de ser reduzidos em tamanho e económicos de modo a serem incorporados em outras tecnologias ou dispositivos. Consequentemente, o front-end de rádio frequência dos sensores será projetado e implementado em circuito integrado de microondas monolítico.
Programa Doutoral em Engenharia Eletrotécnica
Chen, Gin-Shine y 陳景欣. "Design of Monolithic-Silicon Micro-Pressure Sensors". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/53851000344359864715.
Texto completo國立成功大學
機械工程學系
86
Micro-devices can be manufactured due to recent active development ofmicro-electro-mechanical system ( MEMS ) process technique. In this thesis,a monolithic silicon micro-pressure sensor with a four-terminal shear stresssensitive piezoresistive strain gauge in place of Wheatston bridge constructionwas developed. Both pressure sensitivity and its temperature coefficient aremajor considerations of the design process. The design procedures include:boundary length of the squared diaphragm, deciding thickness of the squareddiaphragm, size of the doping strain gauge, choosing thickness of the dielecticfilm, method of forming the dielectric film, orientation of the doping strain gauge and decision of dopant cocentration. In the design, stress analysis of the micro- pressure sensor is performed by means of the finite element method. Theprototype micro-pressure sensor will be applied to measure the stressdistribution on stump surface for above-knee amputees.