Libros sobre el tema "Metal oxide semiconductor field-effect transistors"
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Pierret, Robert F. Field effect devices. 2a ed. Reading, Mass: Addison-Wesley Pub. Co., 1990.
Buscar texto completoBaliga, B. Jayant. Advanced power MOSFET concepts. New York: Springer, 2010.
Buscar texto completoSoclof, Sidney. Metal-oxide-semiconductor field-effect transistors (MOSFETS): Principles and applications. Boston: Artech House, 1996.
Buscar texto completoPhysics of semiconductor devices. Englewood Cliffs, N.J: Prentice Hall, 1990.
Buscar texto completoT, Andre Noah y Simon Lucas M, eds. MOSFETS: Properties, preparations to performance. New York: Nova Science Publishers, 2008.
Buscar texto completoKorec, Jacek. Low voltage power MOSFETs: Design, performance and applications. New York: Springer, 2011.
Buscar texto completoPaul, Reinhold. MOS-Feldeffekttransistoren. Berlin: Springer-Verlag, 1994.
Buscar texto completoShur, Michael. Physics of semiconductor devices: Software and manual. London: Prentice-Hall, 1990.
Buscar texto completoOktyabrsky, Serge y Peide D. Ye. Fundamentals of III-V semiconductor MOSFETs. New York: Springer, 2010.
Buscar texto completoAmara, Amara y Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.
Buscar texto completoTaylor, B. E. Power Mosfet design. Chichester, W. Sussex, England: Wiley, 1993.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 3a ed. New York: Oxford University Press, 2010.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 3a ed. New York: Oxford University Press, 2010.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 3a ed. New York: Oxford University Press, 2011.
Buscar texto completoBaliga, Jayant. Silicon RF power MOSFETs. Singapore: World Scientific, 2005.
Buscar texto completoSilicon RF power MOSFETS. Singapore: World Scientific, 2005.
Buscar texto completoCherem, Schneider Márcio, ed. MOSFET modeling for circuit analysis and design. Singapore: World Scientific, 2007.
Buscar texto completoQuantum-mechanical modeling of transport parameters for MOS devices. Konstanz: Hartnung-Gorre, 2006.
Buscar texto completoJürgen, Mattausch Hans y Ezaki Tatsuya, eds. The physics and modeling of MOSFETS: Surface-potential model HiSIM. Singapore: World Scientific, 2008.
Buscar texto completoSchroder, Dieter K. Advanced MOS devices. Reading, Mass: Addison-Wesley Pub. Co., 1987.
Buscar texto completoSchroder, Dieter K. Advanced MOS devices. Reading, Mass: Addison-Wesley Pub. Co., 1990.
Buscar texto completoWarner, R. M. MOSFET theory and design. New York: Oxford University Press, 1999.
Buscar texto completo1952-, Chattopadhyay Swapan y Bera L. K, eds. Strained-Si heterostructure field effect devices. New York: Taylor & Francis, 2007.
Buscar texto completoSaijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.
Buscar texto completoHänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Wien: Springer-Verlag, 1991.
Buscar texto completoHänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Wien: Springer-Verlag, 1991.
Buscar texto completoCenter, Lewis Research, ed. Analog synthesized fast-variable linear load. Brook Park, Ohio: Sverdrup Technology, Inc., Lewis Research Center Group, 1991.
Buscar texto completoCenter, Lewis Research, ed. Analog synthesized fast-variable linear load. Brook Park, Ohio: Sverdrup Technology, Inc., Lewis Research Center Group, 1991.
Buscar texto completoWikström, Mats Olaf Tobias. MOS-controlled switches for high-voltage application. Konstanz: Hartung-Gorre, 2001.
Buscar texto completoWilson, C. L. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
Buscar texto completoHisham, Haddara, ed. Characterization methods for submicron MOSFETs. Boston: Kluwer Academic Publishers, 1995.
Buscar texto completoL, Blue J., ed. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
Buscar texto completoL, Wilson C. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, MD: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
Buscar texto completoCMOS: Circuit design, layout, and simulation. 3a ed. Piscataway, NJ: IEEE Press, 2010.
Buscar texto completoLinder, Stefan. Power semiconductors. Lausanne, Switzerland: EPFL Press, 2006.
Buscar texto completo1960-, Li Harry W., Boyce David E. 1940- y Institute of Electrical and Electronics Engineers, eds. CMOS circuit design, layout, and simulation. New Delhi: Prentice-Hall of India, 2004.
Buscar texto completoFoty, D. MOSFET modeling with SPICE: Principles and practice. Upper Saddle River, NJ: Prentice Hall PTR, 1997.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 2a ed. Boston: WCB/McGraw-Hill, 1999.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. New York: McGraw-Hill, 1987.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 2a ed. New York: Oxford University Press, 1999.
Buscar texto completoChaudhry, Amit. Fundamentals of Nanoscaled Field Effect Transistors. New York, NY: Springer New York, 2013.
Buscar texto completoBufler, Fabian M. Full-band Monte Carlo simulation of nanoscale strained silicon MOSFETs. Konstanz: Hartung-Gorre, 2003.
Buscar texto completoWarner, R. M. Transistors: Fundamentals for the integrated-circuit engineer. Malabar, Fla: R.E. Krieger Pub. Co., 1990.
Buscar texto completoEl-Khatib, Ziad. Distributed CMOS bidirectional amplifiers: Broadbanding and linearization techniques. New York: Springer, 2012.
Buscar texto completoFleetwood, Daniel. Defects in microelectronic materials and devices. Boca Raton, FL: CRC Press, 2008.
Buscar texto completoMadrid, Philip E. Device design and process window analysis of a deep submicron CMOS VLSI technology. Reading, Mass: Addison-Wesley, 1992.
Buscar texto completoCheng, Yuhua. MOSFET modeling & BSIM3 user's guide. New York: Kluwer Academic Publishers, 2002.
Buscar texto completoCheng, Yuhua. MOSFET modeling & BSIM3 user's guide. Boston: Kluwer Academic Publishers, 1999.
Buscar texto completoChenming, Hu, ed. MOSFET modeling & BSIM3 user's guide. Boston: Kluwer Academic Publishers, 1999.
Buscar texto completoMaeda, Shigenobu. Teishōhi denryoku kōsoku MOSFET gijutsu: Takesshō shirikon TFT fukagata SRAM to SOI debaisu. Tōkyō: Sipec, 2002.
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