Libros sobre el tema "Metal oxide semiconductor field-effect transistors"
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Pierret, Robert F. Field effect devices. 2a ed. Reading, Mass: Addison-Wesley Pub. Co., 1990.
Buscar texto completoSoclof, Sidney. Metal-oxide-semiconductor field-effect transistors (MOSFETS): Principles and applications. Boston: Artech House, 1996.
Buscar texto completoBaliga, B. Jayant. Advanced power MOSFET concepts. New York: Springer, 2010.
Buscar texto completoCroon, Jeroen A. Matching properties of deep sub-micron MOS transistors. New York: Springer, 2005.
Buscar texto completoShur, Michael. Physics of semiconductor devices. Englewood Cliffs, N.J: Prentice Hall, 1990.
Buscar texto completoKorec, Jacek. Low voltage power MOSFETs: Design, performance and applications. New York: Springer, 2011.
Buscar texto completoPaul, Reinhold. MOS-Feldeffekttransistoren. Berlin: Springer-Verlag, 1994.
Buscar texto completoT, Andre Noah y Simon Lucas M, eds. MOSFETS: Properties, preparations to performance. New York: Nova Science Publishers, 2008.
Buscar texto completoShur, Michael. Physics of semiconductor devices: Software and manual. London: Prentice-Hall, 1990.
Buscar texto completoOktyabrsky, Serge y Peide D. Ye. Fundamentals of III-V semiconductor MOSFETs. New York: Springer, 2010.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 3a ed. New York: Oxford University Press, 2010.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 3a ed. New York: Oxford University Press, 2011.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 3a ed. New York: Oxford University Press, 2010.
Buscar texto completoTaylor, B. E. Power Mosfet design. Chichester, W. Sussex, England: Wiley, 1993.
Buscar texto completoAmara, Amara y Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.
Buscar texto completoKang, Baowei. Chang xiao ying jing ti guan li lun ji chu. 8a ed. Beijing: Ke xue chu ban she, 1985.
Buscar texto completoBaliga, Jayant. Silicon RF power MOSFETs. Singapore: World Scientific, 2005.
Buscar texto completoBaliga, B. Jayant. Silicon RF power MOSFETS. Singapore: World Scientific, 2005.
Buscar texto completoAmara, Amara y Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.
Buscar texto completoHöhr, Timm. Quantum-mechanical modeling of transport parameters for MOS devices. Konstanz: Hartnung-Gorre, 2006.
Buscar texto completoKano, Kanaan. Semiconductor devices. Upper Saddle River, N.J: Prentice Hall, 1998.
Buscar texto completoSchroder, Dieter K. Advanced MOS devices. Reading, Mass: Addison-Wesley Pub. Co., 1987.
Buscar texto completoSchroder, Dieter K. Advanced MOS devices. Reading, Mass: Addison-Wesley Pub. Co., 1990.
Buscar texto completoWarner, R. M. MOSFET theory and design. New York: Oxford University Press, 1999.
Buscar texto completoMaiti, C. K. Strained-Si heterostructure field effect devices. New York: Taylor & Francis, 2007.
Buscar texto completoEnz, Christian. Charge-based MOS transistor modelling: The EKV model for low-power and RF IC design. Chichester, UK: John Wiley & Sons, 2006.
Buscar texto completoSaijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.
Buscar texto completoHänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Wien: Springer-Verlag, 1991.
Buscar texto completoGalup-Montoro, Carlos. MOSFET modeling for circuit analysis and design. Singapore: World Scientific, 2007.
Buscar texto completoCenter, Lewis Research, ed. Analog synthesized fast-variable linear load. Brook Park, Ohio: Sverdrup Technology, Inc., Lewis Research Center Group, 1991.
Buscar texto completoGrant, Duncan A. Power MOSFETS: Theory and applications. New York: Wiley, 1989.
Buscar texto completoCenter, Lewis Research, ed. Analog synthesized fast-variable linear load. Brook Park, Ohio: Sverdrup Technology, Inc., Lewis Research Center Group, 1991.
Buscar texto completoHänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Wien: Springer-Verlag, 1991.
Buscar texto completoMiura-Mattausch, Mitiko. The physics and modeling of MOSFETS: Surface-potential model HiSIM. Singapore: World Scientific, 2008.
Buscar texto completoP, Severns Rudolf y Armijos Jack 1949-, eds. MOSPOWER applications handbook. Santa Clara, Calif: Siliconix, 1985.
Buscar texto completoWikström, Mats Olaf Tobias. MOS-controlled switches for high-voltage application. Konstanz: Hartung-Gorre, 2001.
Buscar texto completoWilson, C. L. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
Buscar texto completoL, Blue J., ed. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
Buscar texto completoL, Wilson C. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, MD: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
Buscar texto completoHisham, Haddara, ed. Characterization methods for submicron MOSFETs. Boston: Kluwer Academic Publishers, 1995.
Buscar texto completoBaker, R. Jacob. CMOS: Circuit design, layout, and simulation. 3a ed. Piscataway, NJ: IEEE Press, 2010.
Buscar texto completoLinder, Stefan. Power semiconductors. Lausanne, Switzerland: EPFL Press, 2006.
Buscar texto completoBaker, R. Jacob. CMOS circuit design, layout, and simulation. New Delhi: Prentice-Hall of India, 2004.
Buscar texto completoFoty, D. MOSFET modeling with SPICE: Principles and practice. Upper Saddle River, NJ: Prentice Hall PTR, 1997.
Buscar texto completoR, Fossum Eric y Society of Photo-optical Instrumentation Engineers., eds. Infrared readout electronics II: 7-8 April 1994, Orlando, Florida. Bellingham, Wash., USA: SPIE, 1994.
Buscar texto completoTsividis, Yannis P. Operation and modeling of the MOS transistor. New York: McGraw-Hill, 1987.
Buscar texto completoChaudhry, Amit. Fundamentals of Nanoscaled Field Effect Transistors. New York, NY: Springer New York, 2013.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 2a ed. Boston: WCB/McGraw-Hill, 1998.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 2a ed. Boston: WCB/McGraw-Hill, 1999.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. New York: McGraw-Hill, 1987.
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