Artículos de revistas sobre el tema "Metal-Insulator Transition devices"
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Lee, D., B. Chung, Y. Shi, G. Y. Kim, N. Campbell, F. Xue, K. Song et al. "Isostructural metal-insulator transition in VO2". Science 362, n.º 6418 (29 de noviembre de 2018): 1037–40. http://dx.doi.org/10.1126/science.aam9189.
Texto completoLi, Dasheng, Jonathan M. Goodwill, James A. Bain y Marek Skowronski. "Scaling behavior of oxide-based electrothermal threshold switching devices". Nanoscale 9, n.º 37 (2017): 14139–48. http://dx.doi.org/10.1039/c7nr03865h.
Texto completoWang, Qi, Kai Liang Zhang, Fang Wang, Kai Song y Zhi Xiang Hu. "Investigation on the Electric-Field-Induced Metal-Insulator Transition in VoX-Based Devices". Applied Mechanics and Materials 130-134 (octubre de 2011): 1–4. http://dx.doi.org/10.4028/www.scientific.net/amm.130-134.1.
Texto completoPolak, Paweł, Jan Jamroz y Tomasz K. Pietrzak. "Observation of Metal–Insulator Transition (MIT) in Vanadium Oxides V2O3 and VO2 in XRD, DSC and DC Experiments". Crystals 13, n.º 9 (23 de agosto de 2023): 1299. http://dx.doi.org/10.3390/cryst13091299.
Texto completoCheng, Shaobo, Min-Han Lee, Richard Tran, Yin Shi, Xing Li, Henry Navarro, Coline Adda et al. "Inherent stochasticity during insulator–metal transition in VO2". Proceedings of the National Academy of Sciences 118, n.º 37 (7 de septiembre de 2021): e2105895118. http://dx.doi.org/10.1073/pnas.2105895118.
Texto completoHong, Woong-Ki, SeungNam Cha, Jung Inn Sohn y Jong Min Kim. "Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2Structures". Journal of Nanomaterials 2015 (2015): 1–15. http://dx.doi.org/10.1155/2015/538954.
Texto completoWei, Na, Xiang Ding, Shifan Gao, Wenhao Wu y Yi Zhao. "HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance". Electronics 11, n.º 22 (20 de noviembre de 2022): 3820. http://dx.doi.org/10.3390/electronics11223820.
Texto completoHuang, Tiantian, Rui Zhang, Lepeng Zhang, Peiran Xu, Yunkai Shao, Wanli Yang, Zhimin Chen, Xin Chen y Ning Dai. "Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition". RSC Advances 12, n.º 55 (2022): 35579–86. http://dx.doi.org/10.1039/d2ra06866d.
Texto completoWeidemann, Sebastian, Mark Kremer, Stefano Longhi y Alexander Szameit. "Topological triple phase transition in non-Hermitian Floquet quasicrystals". Nature 601, n.º 7893 (19 de enero de 2022): 354–59. http://dx.doi.org/10.1038/s41586-021-04253-0.
Texto completoHeo, Jinseong, Heejeong Jeong, Yeonchoo Cho, Jaeho Lee, Kiyoung Lee, Seunggeol Nam, Eun-Kyu Lee et al. "Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition". Nano Letters 16, n.º 11 (5 de octubre de 2016): 6746–54. http://dx.doi.org/10.1021/acs.nanolett.6b02199.
Texto completoMcGee, Ryan, Ankur Goswami, Rosmi Abraham, Syed Bukhari y Thomas Thundat. "Phase transformation induced modulation of the resonance frequency of VO2/tio2 coated microcantilevers". MRS Advances 3, n.º 6-7 (2018): 359–64. http://dx.doi.org/10.1557/adv.2018.140.
Texto completoCalhoun, Seth, Rachel Evans, Cameron Nickle, Isaiah O. Oladeji, Justin Cleary, Evan M. Smith, Sayan Chandra, Debashis Chanda y Robert E. Peale. "Vanadium Oxide Thin Film by Aqueous Spray Deposition". MRS Advances 3, n.º 45-46 (2018): 2777–82. http://dx.doi.org/10.1557/adv.2018.512.
Texto completoMa, Chung T., Salinporn Kittiwatanakul, Apiprach Sittipongpittaya, Yuhan Wang, Md Golam Morshed, Avik W. Ghosh y S. Joseph Poon. "Phase Change-Induced Magnetic Switching through Metal–Insulator Transition in VO2/TbFeCo Films". Nanomaterials 13, n.º 21 (27 de octubre de 2023): 2848. http://dx.doi.org/10.3390/nano13212848.
Texto completoWalls, Brian, Oisín Murtagh, Sergey I. Bozhko, Andrei Ionov, Andrey A. Mazilkin, Daragh Mullarkey, Ainur Zhussupbekova et al. "VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching". Materials 15, n.º 21 (31 de octubre de 2022): 7652. http://dx.doi.org/10.3390/ma15217652.
Texto completoKwon, Osung, Hongmin Lee y Sungjun Kim. "Effects of Oxygen Flow Rate on Metal-to-Insulator Transition Characteristics in NbOx-Based Selectors". Materials 15, n.º 23 (1 de diciembre de 2022): 8575. http://dx.doi.org/10.3390/ma15238575.
Texto completoDruzhinin, Anatoly, Igor Ostrovskii, Yuriy Khoverko y Sergij Yatsukhnenko. "Magnetic Properties of Doped Si<B,Ni> Whiskers for Spintronics". Journal of Nano Research 39 (febrero de 2016): 43–54. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.43.
Texto completoXu, Zhen, Ayrton A. Bernussi y Zhaoyang Fan. "Voltage Pulse Driven VO2 Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons". Electronics 11, n.º 4 (9 de febrero de 2022): 516. http://dx.doi.org/10.3390/electronics11040516.
Texto completoParihar, Abhinav, Nikhil Shukla, Matthew Jerry, Suman Datta y Arijit Raychowdhury. "Computing with dynamical systems based on insulator-metal-transition oscillators". Nanophotonics 6, n.º 3 (19 de abril de 2017): 601–11. http://dx.doi.org/10.1515/nanoph-2016-0144.
Texto completoLu, Chang, Qingjian Lu, Min Gao y Yuan Lin. "Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film". Nanomaterials 11, n.º 1 (6 de enero de 2021): 114. http://dx.doi.org/10.3390/nano11010114.
Texto completoGim, Hyeongyu y Kootak Hong. "Nonvolatile Control of Metal-Insulator Transition in VO2 and Its Applications". Ceramist 26, n.º 1 (31 de marzo de 2023): 3–16. http://dx.doi.org/10.31613/ceramist.2023.26.1.01.
Texto completoWei, Guodong, Xiaofei Fan, Yiang Xiong, Chen Lv, Shen Li y Xiaoyang Lin. "Highly disordered VO2 films: appearance of electronic glass transition and potential for device-level overheat protection". Applied Physics Express 15, n.º 4 (1 de abril de 2022): 043002. http://dx.doi.org/10.35848/1882-0786/ac605d.
Texto completoLin, Jianqiang, Shriram Ramanathan y Supratik Guha. "Electrically Driven Insulator–Metal Transition-Based Devices—Part II: Transient Characteristics". IEEE Transactions on Electron Devices 65, n.º 9 (septiembre de 2018): 3989–95. http://dx.doi.org/10.1109/ted.2018.2859188.
Texto completoLi, Dasheng, Abhishek A. Sharma, Darshil K. Gala, Nikhil Shukla, Hanjong Paik, Suman Datta, Darrell G. Schlom, James A. Bain y Marek Skowronski. "Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices". ACS Applied Materials & Interfaces 8, n.º 20 (10 de mayo de 2016): 12908–14. http://dx.doi.org/10.1021/acsami.6b03501.
Texto completoMakino, Kotaro, Kosaku Kato, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Takashi Nakano y Makoto Nakajima. "Terahertz spectroscopic characterization of Ge2Sb2Te5 phase change materials for photonics applications". Journal of Materials Chemistry C 7, n.º 27 (2019): 8209–15. http://dx.doi.org/10.1039/c9tc01456j.
Texto completoGarcía, Héctor, Jonathan Boo, Guillermo Vinuesa, Óscar G. Ossorio, Benjamín Sahelices, Salvador Dueñas, Helena Castán, Mireia B. González y Francesca Campabadal. "Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices". Electronics 10, n.º 22 (17 de noviembre de 2021): 2816. http://dx.doi.org/10.3390/electronics10222816.
Texto completoDarwish, Mahmoud y László Pohl. "Insulator Metal Transition-Based Selector in Crossbar Memory Arrays". Electronic Materials 5, n.º 1 (23 de febrero de 2024): 17–29. http://dx.doi.org/10.3390/electronicmat5010002.
Texto completoLee, Su Yeon, Hyun Kyu Seo, Se Yeon Jeong y Min Kyu Yang. "Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices". Materials 16, n.º 12 (11 de junio de 2023): 4315. http://dx.doi.org/10.3390/ma16124315.
Texto completoCardarilli, Gian Carlo, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari y Raj Kumar. "Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device". Electronics 9, n.º 2 (7 de febrero de 2020): 287. http://dx.doi.org/10.3390/electronics9020287.
Texto completoBasyooni, Mohamed A., Mawaheb Al-Dossari, Shrouk E. Zaki, Yasin Ramazan Eker, Mucahit Yilmaz y Mohamed Shaban. "Tuning the Metal–Insulator Transition Properties of VO2 Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Doping". Nanomaterials 12, n.º 9 (26 de abril de 2022): 1470. http://dx.doi.org/10.3390/nano12091470.
Texto completoZhang, Shenli, Hien Vo y Giulia Galli. "Predicting the Onset of Metal–Insulator Transitions in Transition Metal Oxides—A First Step in Designing Neuromorphic Devices". Chemistry of Materials 33, n.º 9 (20 de abril de 2021): 3187–95. http://dx.doi.org/10.1021/acs.chemmater.1c00061.
Texto completoKim, Jihoon, Sungwook Choi, Seul-Lee Lee, Do Kyung Kim, Min Seok Kim, Bong-Jun Kim y Yong Wook Lee. "Reversible 100 mA Current Switching in a VO2/Al2O3-Based Two-Terminal Device Using Focused Far-Infrared Laser Pulses". Journal of Nanoscience and Nanotechnology 21, n.º 3 (1 de marzo de 2021): 1862–68. http://dx.doi.org/10.1166/jnn.2021.18905.
Texto completoChen, Yiheng, Wen-Ti Guo, Zi-Si Chen, Suyun Wang y Jian-Min Zhang. "First-principles study on the heterostructure of twisted graphene/hexagonal boron nitride/graphene sandwich structure". Journal of Physics: Condensed Matter 34, n.º 12 (7 de enero de 2022): 125504. http://dx.doi.org/10.1088/1361-648x/ac45b5.
Texto completoShin, Jaemin, Tyafur Pathan, Guanyu Zhou y Christopher L. Hinkle. "(Invited) Bulk Traps in Layered 2D Gate Dielectrics". ECS Transactions 113, n.º 2 (17 de mayo de 2024): 25–33. http://dx.doi.org/10.1149/11302.0025ecst.
Texto completoSampaio-Silva, Alessandre, Gervásio Protásio dos Santos Cavalcante, Carlos Alberto B. Silva y Jordan Del Nero. "Design of Molecular Positive Electronic Transition Device". Journal of Computational and Theoretical Nanoscience 18, n.º 6 (1 de junio de 2021): 1714–23. http://dx.doi.org/10.1166/jctn.2021.9729.
Texto completoSampaio-Silva, Alessandre, Gervásio Protásio dos Santos Cavalcante, Carlos Alberto B. Silva y Jordan Del Nero. "Design of Molecular Positive Electronic Transition Device". Journal of Computational and Theoretical Nanoscience 18, n.º 6 (1 de junio de 2021): 1714–23. http://dx.doi.org/10.1166/jctn.2021.9729.
Texto completoWang, Peng-Fei, Qianqian Hu, Tan Zheng, Yu Liu, Xiaofeng Xu y Jia-Lin Sun. "Optically Monitored Electric-Field-Induced Phase Transition in Vanadium Dioxide Crystal Film". Crystals 10, n.º 9 (29 de agosto de 2020): 764. http://dx.doi.org/10.3390/cryst10090764.
Texto completoMizsei, János, Jyrki Lappalainen y Laszló Pohl. "Active thermal-electronic devices based on heat-sensitive metal-insulator-transition resistor elements". Sensors and Actuators A: Physical 267 (noviembre de 2017): 14–20. http://dx.doi.org/10.1016/j.sna.2017.09.052.
Texto completoHong, X., A. Posadas y C. H. Ahn. "Examining the screening limit of field effect devices via the metal-insulator transition". Applied Physics Letters 86, n.º 14 (4 de abril de 2005): 142501. http://dx.doi.org/10.1063/1.1897076.
Texto completoM, Arunachalam, Thamilmaran P y Sakthipandi K. "Effect of Sintering Temperature on Metal-Insulator Phase Transition in La1-xCaxMnO3 Perovskites". Frontiers in Advanced Materials Research 2, n.º 1 (26 de mayo de 2020): 37–42. http://dx.doi.org/10.34256/famr2014.
Texto completoCheng, Shaobo, Min-Han Lee, Xing Li, Lorenzo Fratino, Federico Tesler, Myung-Geun Han, Javier del Valle et al. "Operando characterization of conductive filaments during resistive switching in Mott VO2". Proceedings of the National Academy of Sciences 118, n.º 9 (23 de febrero de 2021): e2013676118. http://dx.doi.org/10.1073/pnas.2013676118.
Texto completoKlein, D. R., D. MacNeill, J. L. Lado, D. Soriano, E. Navarro-Moratalla, K. Watanabe, T. Taniguchi et al. "Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling". Science 360, n.º 6394 (3 de mayo de 2018): 1218–22. http://dx.doi.org/10.1126/science.aar3617.
Texto completoRakshit, Abhishek, Karimul Islam, Anil Kumar Sinha y Supratic Chakraborty. "Insulator-to-metal transition of vanadium oxide-based metal-oxide-semiconductor devices at discrete measuring temperatures". Semiconductor Science and Technology 34, n.º 5 (4 de abril de 2019): 055001. http://dx.doi.org/10.1088/1361-6641/ab07d7.
Texto completoYu, Wenhao, Luqiu Chen, Yifei Liu, Bobo Tian, Qiuxiang Zhu y Chungang Duan. "Resistive switching polarity reversal due to ferroelectrically induced phase transition at BiFeO3/Ca0.96Ce0.04MnO3 heterostructures". Applied Physics Letters 122, n.º 2 (9 de enero de 2023): 022902. http://dx.doi.org/10.1063/5.0132819.
Texto completoNishikawa, K., S. Takakura, M. Nakatake, M. Yoshimura y Y. Watanabe. "Effect of surface modification by Ar+ ion irradiation on thermal hysteresis of VO2". Journal of Applied Physics 133, n.º 4 (28 de enero de 2023): 045305. http://dx.doi.org/10.1063/5.0132957.
Texto completoZhang, Yanqing, Weiming Xiong, Weijin Chen y Yue Zheng. "Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives". Nanomaterials 11, n.º 2 (28 de enero de 2021): 338. http://dx.doi.org/10.3390/nano11020338.
Texto completoRafiq, Fareenpoornima, Parthipan Govindsamy y Selvakumar Periyasamy. "Synthesis of a Novel Nanoparticle BaCoO2.6 through Sol-Gel Method and Elucidation of Its Structure and Electrical Properties". Journal of Nanomaterials 2022 (19 de julio de 2022): 1–15. http://dx.doi.org/10.1155/2022/3877879.
Texto completoHa, Sieu D., B. Viswanath y Shriram Ramanathan. "Electrothermal actuation of metal-insulator transition in SmNiO3 thin film devices above room temperature". Journal of Applied Physics 111, n.º 12 (15 de junio de 2012): 124501. http://dx.doi.org/10.1063/1.4729490.
Texto completoYoon, Jongwon, Woong-Ki Hong, Yonghun Kim y Seung-Young Park. "Nanostructured Vanadium Dioxide Materials for Optical Sensing Applications". Sensors 23, n.º 15 (27 de julio de 2023): 6715. http://dx.doi.org/10.3390/s23156715.
Texto completoRai, R. K., R. B. Ray, G. C. Kaphle y O. P. Niraula. "A Continuous Time Quantum Monte Carlo as an Impurity Solver for Strongly Correlated System". Journal of Nepal Physical Society 7, n.º 3 (31 de diciembre de 2021): 14–26. http://dx.doi.org/10.3126/jnphyssoc.v7i3.42185.
Texto completoMoon, Jaehyun, Ju-Hun Lee, Kitae Kim, Junho Kim, Soohyung Park, Yeonjin Yi y Seung-Youl Kang. "Threshold Switching of ALD-NbOx Films for Neuromorphic Applications". ECS Meeting Abstracts MA2023-02, n.º 30 (22 de diciembre de 2023): 1558. http://dx.doi.org/10.1149/ma2023-02301558mtgabs.
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