Literatura académica sobre el tema "Localized GaN growth"
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Artículos de revistas sobre el tema "Localized GaN growth"
Chang, Chiao-Yun, Huei-Min Huang, Yu-Pin Lan, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang, Li-Wei Tu y Wen-Feng Hsieh. "Growth and Characteristics of a-Plane GaN/ZnO/GaN Heterostructure". MRS Proceedings 1538 (2013): 303–7. http://dx.doi.org/10.1557/opl.2013.550.
Texto completoSun, Haoran, Yuhui Chen, Yuhao Ben, Hongping Zhang, Yujie Zhao, Zhihao Jin, Guoqi Li y Mei Zhou. "Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells". Materials 16, n.º 4 (13 de febrero de 2023): 1558. http://dx.doi.org/10.3390/ma16041558.
Texto completoМохов, Е. Н., А. А. Вольфсон y О. П. Казарова. "Выращивание объёмных кристаллов AlN и GaN сублимационным сандвич-методом". Физика твердого тела 61, n.º 12 (2019): 2298. http://dx.doi.org/10.21883/ftt.2019.12.48537.17ks.
Texto completoNing, X. J., F. R. Chien, P. Pirouz, J. W. Yang y M. Asif Khan. "Growth defects in GaN films on sapphire: The probable origin of threading dislocations". Journal of Materials Research 11, n.º 3 (marzo de 1996): 580–92. http://dx.doi.org/10.1557/jmr.1996.0071.
Texto completoWang, C. K., Y. Z. Chiou y H. J. Chang. "Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates". Crystals 9, n.º 12 (17 de diciembre de 2019): 677. http://dx.doi.org/10.3390/cryst9120677.
Texto completoYan, Luyi, Feng Liang, Jing Yang, Ping Chen, Desheng Jiang y Degang Zhao. "The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior". Nanomaterials 14, n.º 8 (18 de abril de 2024): 703. http://dx.doi.org/10.3390/nano14080703.
Texto completoEl Amrani, Mohammed, Julien Buckley, Thomas Kaltsounis, David Plaza Arguello, Hala El Rammouz, Daniel Alquier y Matthew Charles. "Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy". Crystals 14, n.º 6 (14 de junio de 2024): 553. http://dx.doi.org/10.3390/cryst14060553.
Texto completoSavini, G., M. I. Heggie, C. P. Ewels, N. Martsinovich, R. Jones y A. T. Blumenau. "Structure and Energy of the 90° Partial Dislocations in Wurtzite-GaN". Materials Science Forum 483-485 (mayo de 2005): 1057–60. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.1057.
Texto completoSURESH, S., V. GANESH, M. BALAJI, K. BASKAR, K. ASOKAN y D. KANJILAL. "STRUCTURAL CHARACTERISTICS OF 70 MeV Si5+ ION IRRADIATION INDUCED NANOCLUSTERS OF GALLIUM NITRIDE". International Journal of Nanoscience 10, n.º 04n05 (agosto de 2011): 823–26. http://dx.doi.org/10.1142/s0219581x11009246.
Texto completoBassaler, Julien, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub y Philippe Ferrandis. "Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template". Journal of Applied Physics 131, n.º 12 (28 de marzo de 2022): 124501. http://dx.doi.org/10.1063/5.0077107.
Texto completoTesis sobre el tema "Localized GaN growth"
Wehbe, Maya. "Modélisation et caractérisation des effets de nano-compliance pour la croissance épitaxiale localisée de GaN sur substrats Si". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALY041.
Texto completoGallium nitride (GaN) is a promising semiconductor for microLEDs, but heteroepitaxial growthof GaN generates dislocations that reduce their emission efficiency. To improve the quality ofthe GaN, we propose novel approach based on growing GaN pyramids on top ofGaN/AlN/Si(111)/SiO2 nano-pillars. The approach relies on the excess surface energy at eachpyramid's interface to allow the pillars to tilt/twist, coalescing and aligning the GaN on top. Themain objective of this work is to gain a physical understanding of the processes operating duringcoalescence, determine the GaN quality, investigate the tilt/twist of the pillars and propose anoptimal pillars pattern. Therefore, different samples were studied by electron backscatterdiffraction, cathodoluminescence and advanced X-ray diffraction techniques at the EuropeanSynchrotron Radiation Facility. The results demonstrated the rotation of pillars by 0.1°. Weshowed that achievement of homogenous GaN layers in lines of pillars (dislocation density ≈1.2 x 107 cm-2). We were able to follow the behavior of the GaN at the early stage ofcoalescence, in fact, the initially misoriented GaN pillars, were found to coalesce into largerwell-defined GaN domains with a unique orientation distribution within each domain and a tiltlimit of 0.1° between neighboring pillars was found. Geometrically necessary dislocations werefound at the grain boundaries of the GaN domains. To complete the work, finite elementsimulations and analytical calculations are performed to identify the optimal parameters thatmake the pillars rotation energetically feasible; the radius (r) of the pillar was identified as theparameter with the greatest impact as the energy required to rotate is proportional to r4. Theseresults allowed the realization of new optimized pillars pattern that showed promising resultsand will allow the fabrication of high quality GaN islands suitable for microLEDs
Capítulos de libros sobre el tema "Localized GaN growth"
Neu, Gerrit Emanuel, Florian Christ, Tagir Iskhakov, Christina Krikelis, Diego Nicolás Petraroia, Sven Plückelmann, Maximilian Schoen et al. "Tunnel Linings". En Interaction Modeling in Mechanized Tunneling, 253–327. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-24066-9_5.
Texto completoKelly, M. J. "Amorphous semiconductor multilayers". En Low-Dimensional Semiconductors, 475–90. Oxford University PressOxford, 1995. http://dx.doi.org/10.1093/oso/9780198517818.003.0020.
Texto completoCaradonna, Jeremy L. "The Future: 10 Challenges for Sustainability". En Sustainability. Oxford University Press, 2014. http://dx.doi.org/10.1093/oso/9780199372409.003.0011.
Texto completoPlumb, May Helena, Alejandra Dubcovsky, Moisés García Guzmán, Brook Danielle Lillehaugen y Felipe H. Lopez. "Growing a Bigger Linguistics Through a Zapotec Agenda". En Decolonizing Linguistics, 363–80. Oxford University PressNew York, 2024. http://dx.doi.org/10.1093/oso/9780197755259.003.0017.
Texto completoActas de conferencias sobre el tema "Localized GaN growth"
Pin, Christophe, Hideki Fujiwara, Tatsuro Suzuki y Keiji Sasaki. "Photothermal energy conversion in plasmonic nano gap antennas: application to localized ZnO growth for nanophotonics". En Optical Manipulation and Structured Materials Conference, editado por Takashige Omatsu, Hajime Ishihara, Keiji Sasaki y Kishan Dholakia. SPIE, 2020. http://dx.doi.org/10.1117/12.2573518.
Texto completoSpann, Bryan T., Joshua R. Nolen, Matt D. Brubaker, Thomas G. Folland, Chase T. Ellis, Joseph G. Tischler, Todd E. Harvey, Joshua D. Caldwell y Kris A. Bertness. "Localized phonon-polariton modes in periodic GaN nanowire arrays grown by selective area epitaxy (Conference Presentation)". En Metamaterials, Metadevices, and Metasystems 2018, editado por Nader Engheta, Mikhail A. Noginov y Nikolay I. Zheludev. SPIE, 2018. http://dx.doi.org/10.1117/12.2322885.
Texto completoMaruyama, Shigeo y Rong Xiang. "CVD Growth, Optical and Thermal Characterization of Vertically-Aligned Single-Walled Carbon Nanotubes". En ASME 2009 Second International Conference on Micro/Nanoscale Heat and Mass Transfer. ASMEDC, 2009. http://dx.doi.org/10.1115/mnhmt2009-18552.
Texto completoCho, Jaegeol, Jeonghoon Lee, Hyun W. Kim y Mansoo Choi. "A Study of Particle Growth Using Light Scattering and Local Sampling in Flame Synthesis of Nano Particles". En ASME 1999 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1999. http://dx.doi.org/10.1115/imece1999-1075.
Texto completoYi, Jong Chang, Nadir Dagli y Larry Coldren. "Optical properties of serpentine superlattices". En Integrated Photonics Research. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/ipr.1991.tuf3.
Texto completoKarstens, H., J. Knobloch, A. Winkler, A. Pusel, M. Barth y P. Hess. "VUV Laser (157 nm) Chemical Vapor Deposition of High Quality Amorphous Hydrogenated Silicon: "Chemical Mechanism"". En Microphysics of Surfaces: Nanoscale Processing. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/msnp.1995.mthd5.
Texto completoSong, Jitian, Chaoyang Zhu, Xiang Li, Chunlin Gu, Liang Huang y Jiepu Li. "Numerical Simulation Research on Heat Transfer Characteristics of On-Board Type 4 Hydrogen Storage Cylinders Under Localized Fire". En ASME 2022 Pressure Vessels & Piping Conference. American Society of Mechanical Engineers, 2022. http://dx.doi.org/10.1115/pvp2022-84582.
Texto completoFarrag, Khalid A. "External Corrosion Growth-Rate From Soil Properties". En 2010 8th International Pipeline Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ipc2010-31416.
Texto completoKukimoto, Hiroshi. "Overview - Blue-Green Semiconductor LED/Laser Work in Japan". En Compact Blue-Green Lasers. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.thc2.
Texto completoRettig, Uwe, Ulrich Bast, Dinorah Steiner y Matthias Oechsner. "Characterization of Fatigue Mechanisms of Thermal Barrier Coatings by a Novel Laser-Based Test". En ASME 1998 International Gas Turbine and Aeroengine Congress and Exhibition. American Society of Mechanical Engineers, 1998. http://dx.doi.org/10.1115/98-gt-336.
Texto completoInformes sobre el tema "Localized GaN growth"
O'Connell, Kelly, David Burdick, Melissa Vaccarino, Colin Lock, Greg Zimmerman y Yakuta Bhagat. Coral species inventory at War in the Pacific National Historical Park: Final report. National Park Service, 2024. http://dx.doi.org/10.36967/2302040.
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