Bibliografías temáticas / Light emitters in silicon

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Literatura académica sobre el tema "Light emitters in silicon"

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Publicado: 25 de mayo de 2024

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Artículos de revistas sobre el tema "Light emitters in silicon"

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Kittler, M., M. Reiche, T. Arguirov, W. Seifert y X. Yu. "Silicon-based light emitters". physica status solidi (a) 203, n.º 4 (marzo de 2006): 802–9. http://dx.doi.org/10.1002/pssa.200564518.

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Helm, M., J. M. Sun, J. Potfajova, T. Dekorsy, B. Schmidt y W. Skorupa. "Efficient silicon based light emitters". Microelectronics Journal 36, n.º 11 (noviembre de 2005): 957–62. http://dx.doi.org/10.1016/j.mejo.2005.04.002.

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Kittler, Martin, Teimuraz Mchedlidze, Tzanimir Arguirov, Winfried Seifert, Manfred Reiche y Thomas Wilhelm. "Silicon based IR light emitters". physica status solidi (c) 6, n.º 3 (marzo de 2009): 707–15. http://dx.doi.org/10.1002/pssc.200880713.

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Kasper, Erich y Michael Oehme. "Germanium tin light emitters on silicon". Japanese Journal of Applied Physics 54, n.º 4S (27 de marzo de 2015): 04DG11. http://dx.doi.org/10.7567/jjap.54.04dg11.

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Guha, Supratik y Nestor A. Bojarczuk. "Multicolored light emitters on silicon substrates". Applied Physics Letters 73, n.º 11 (14 de septiembre de 1998): 1487–89. http://dx.doi.org/10.1063/1.122181.

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Fauchet, P. M. "Progress toward nanoscale silicon light emitters". IEEE Journal of Selected Topics in Quantum Electronics 4, n.º 6 (1998): 1020–28. http://dx.doi.org/10.1109/2944.736103.

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Kittler, M., T. Arguirov, W. Seifert, X. Yu, G. Jia, O. F. Vyvenko, T. Mchedlidze, M. Reiche, J. Sha y D. Yang. "Silicon nanostructures for IR light emitters". Materials Science and Engineering: C 27, n.º 5-8 (septiembre de 2007): 1252–59. http://dx.doi.org/10.1016/j.msec.2006.09.034.

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Makarova, Maria, Jelena Vuckovic, Hiroyuki Sanda y Yoshio Nishi. "Silicon-based photonic crystal nanocavity light emitters". Applied Physics Letters 89, n.º 22 (27 de noviembre de 2006): 221101. http://dx.doi.org/10.1063/1.2396903.

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Kveder, Vitaly V. y Martin Kittler. "Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters". Materials Science Forum 590 (agosto de 2008): 29–56. http://dx.doi.org/10.4028/www.scientific.net/msf.590.29.

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There is a growing demand for a silicon-based light emitters generating a light with a wavelength in of 1.3-1.6 μm range, which can be integrated into silicon chips and used for in-chip opto-electronic interconnects. Among other possibilities, the D1 luminescence at about 1.55 m, caused by dislocations in Si, can be a suitable candidate for such in-chip light emitters. Here we present a brief review of today knowledge about electronic properties of dislocations in silicon and dislocation-related luminescence in connection with possible application of this luminescence for silicon infrared light-emitting diodes (Si-LEDs).
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Lourenço, M. A. y K. P. Homewood. "Dislocation-engineered silicon light emitters for photonic integration". Semiconductor Science and Technology 23, n.º 6 (12 de mayo de 2008): 064005. http://dx.doi.org/10.1088/0268-1242/23/6/064005.

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Tesis sobre el tema "Light emitters in silicon"

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Shakoor, Abdul. "Silicon nanocavity light emitters at 1.3-1.5 µm wavelength". Thesis, University of St Andrews, 2013. http://hdl.handle.net/10023/3673.

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Silicon Photonics has been a major success story in the last decade, with many photonic devices having been successfully demonstrated. The only missing component is the light source, however, as making an efficient light source in silicon is challenging due to the material's indirect bandgap. The development of a silicon light source would enable us to make an all-silicon chip, which would find many practical applications. The most notable among these applications are on-chip communications and sensing applications. In this PhD project, I have worked on enhancing silicon light emission by combining material processing and device engineering methods. Regarding materials processing, the emission level was increased by taking three routes. In all the three cases the emission was further enhanced by coupling it with a photonic crystal (PhC) cavity via Purcell effect. The three different approaches taken in this PhD project are listed below. 1. The first approach involves incorporation of optically active defects into the silicon lattice by hydrogen plasma treatment or ion implantation. This process results in broad luminescence bands centered at 1300 and 1500 nm. By coupling these emission bands with the photonic crystal cavity, I was able to demonstrate a narrowband silicon light emitting diode at room temperature. This silicon nano light emitting diode has a tunable emission line in the 1300-1600 nm range. 2. In the second approach, a narrow emission line at 1.28µm was created by carbon ion implantation, termed “G-line” emission. The possibility of enhancing the emission intensity of this line via the Purcell effect was investigated, but only with limited success. Different proposals for future work are presented in this regard. 3. The third approach is deposition of a thin film of an erbium disilicate on top of a PhC cavity. The erbium emission is enhanced by the PhC cavity. Using this method, an optically pumped light source emitting at 1.54 µm and operating at room temperature is demonstrated. A practical application of silicon light source developed in this project in gas sensing is also demonstrated. As a first step, I show refractive index sensing, which is a simple application for our source and demonstrates its capabilities, especially relating to the lack of fiber coupling schemes. I also discuss several proposals for extending applications into on-chip biological sensing.
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Germer, Susette. "Design and analysis of integrated waveguide structures and their coupling to silicon-based light emitters". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-172306.

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A major focus is on integrated Silicon-based optoelectronics for the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive and portable optical sensors in the environmental control and medicine follows in the development of integrated high resolution sensors [1]. In particular, since 2013 the quick onsite verification of pathogens, like legionella in drinking water pipes, is becoming increasingly important [2, 3]. The essential questions regarding the establishment of portable biochemical sensors are the incorporation of electronic and optical devices as well as the implementations of fundamental cross-innovations between biotechnology and microelectronics. This thesis describes the design, fabrication and analysis of high-refractive-index-contrast photonic structures. Besides silicon nitride (Si3N4) strip waveguides, lateral tapers, bended waveguides, two-dimensional photonic crystals (PhCs) the focus lies on monolithically integrated waveguide butt-coupled Silicon-based light emitting devices (Sibased LEDs) [4, 5] for use as bioanalytical sensor components. Firstly, the design and performance characteristics as single mode regime, confinement factor and propagation losses due to the geometry and operation wavelength (1550 nm, 541 nm) of single mode (SM), multi mode (MM) waveguides and bends are studied and simulated. As a result, SM operation is obtained for 1550 nm by limiting the waveguide cross-section to 0.5 μm x 1 μm resulting in modal confinement factors of 87 %. In contrast, for shorter wavelengths as 541 nm SM propagation is excluded if the core height is not further decreased. Moreover, the obtained theoretical propagation losses for the lowestorder TE/TM mode are in the range of 0.3 - 1.3 dB/cm for an interface roughness of 1 nm. The lower silicon dioxide (SiO2) waveguide cladding should be at least 1 μm to avoid substrate radiations. These results are in a good correlation to the known values for common dielectric structures. In the case of bended waveguides, an idealized device with a radius of 10 μm was developed which shows a reflection minimum (S11 = - 22 dB) at 1550 nm resulting in almost perfect transmission of the signal. Additionally, tapered waveguides were investigated for an optimized light coupling between high-aspect-ratio devices. Here, adiabatic down-tapered waveguides were designed for the elimination of higher-order modes and perfect signal transmission. Secondly, fabrication lines including Electron-beam (E-beam) lithography and reactive ion etching (RIE) with an Aluminum (Al) mask were developed and lead to well fabricated optical devices in the (sub)micrometer range. The usage of focused ion beam (FIB) milling is invented for smoother front faces which were analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). As a result, the anisotropy of the RIE process was increased, but the obtained surface roughness parameters are still too high (10 – 20 nm) demonstrating a more advanced lithography technique is needed for higher quality structures. Moreover, this study presents an alternative fabrication pathway for novel designed waveguides with free-edge overlapping endfaces for improving fiber-chipcoupling. Thirdly, the main focus lies on the development of a monolithic integration circuit consisting of the Si-based LED coupled to an integrated waveguide. The light propagation between high-aspect-ratio devices is enabled through low-loss adiabatic tapers. This study shows, that the usage of CMOS-related fabrication technologies result in a monolithic manufacturing pathway for the successful implementation of fully integrated Si-based photonic circuits. Fourth, transmission loss measurements of the fabricated photonic structures as well as the waveguide butt-coupled Si-based LEDs were performed with a generated setup. As a result, free-edge overlapping MM waveguides show propagation loss coefficients of ~ 65 dB/cm in the range of the telecommunication wavelength. The high surface roughness parameters (~ 150 nm) and the modal dispersion in the core are one of the key driving factors. These facts clearly underline the improvement potential of the used fabrication processes. However, electroluminescence (EL) measurements of waveguide butt-coupled Si-based LEDs due to the implanted rare earth (RE) ion (Tb3+, Er3+) and the host material (SiO2/SiNx) were carried out. The detected transmission spectra of the coupled Tb:SiO2 systems show a weak EL signal at the main transition line of the Tb3+-ion (538 nm). A second emission line was detected in the red region of the spectrum either corresponding to a further optical transition of Tb3+ or a Non Bridging Oxygen Hole Center (NBOHC) in SiO2. Unfortunately, no light emission in the infrared range was established for the Er3+-doped photonic circuits caused by the low external quantum efficiencies (EQE) of the Er3+ implanted Si-based LEDs. Nevertheless, transmission measurements between 450 nm – 800 nm lead again to the result that an emission at 650 nm is either caused by an optical transition of the Er3+-ion or initialized by the NBOHC in the host. Overall, it is difficult to assess whether or not these EL signals are generated from the implanted ions, thus detailed statements about the coupling efficiency between the LED and the integrated waveguide are quite inadequate. Nevertheless, the principle of a fully monolithically integrated photonic circuit consisting of a Si-based LED and a waveguide has been successfully proven in this study.
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Potfajova, J. "Silicon based microcavity enhanced light emitting diodes". Forschungszentrum Dresden-Rossendorf, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-27756.

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Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si-diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1% [1]. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1 MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitranparent distributed Bragg reflector (DBR) on the top; b) 5:5 MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5:5 MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.
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Zabel, Thomas [Verfasser], Gerhard [Akademischer Betreuer] Abstreiter, Jonathan J. [Akademischer Betreuer] Finley y Bougeard [Akademischer Betreuer] Dominique. "Study on silicon-germanium nanoislands as emitters for a monolithic silicon light source / Thomas Zabel. Gutachter: Jonathan J. Finley ; Bougeard Dominique ; Gerhard Abstreiter. Betreuer: Gerhard Abstreiter". München : Universitätsbibliothek der TU München, 2012. http://d-nb.info/103155176X/34.

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Potfajova, J. "Silicon based microcavity enhanced light emitting diodes". Forschungszentrum Dresden-Rossendorf, 2009. https://hzdr.qucosa.de/id/qucosa%3A21604.

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Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si-diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1% [1]. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1 MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitranparent distributed Bragg reflector (DBR) on the top; b) 5:5 MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5:5 MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.:List of Abbreviations and Symbols 1 Introduction and motivation 2 Theory 2.1 Electronic band structure of semiconductors 2.2 Light emitting diodes (LED) 2.2.1 History of LED 2.2.2 Mechanisms of light emission 2.2.3 Electrical properties of LED 2.2.4 LED e ciency 2.3 Si based light emitters 2.4 Microcavity enhanced light emitting pn-diode 2.4.1 Bragg reflectors 2.4.2 Fabry-Perot resonators 2.4.3 Optical mode density and emission enhancement in coplanar Fabry-Perot resonator 2.4.4 Design and optical properties of a Si microcavity LED 3 Preparation and characterisation methods 3.1 Preparation techniques 3.1.1 Thermal oxidation of silicon 3.1.2 Photolithography 3.1.3 Wet chemical cleaning and etching 3.1.4 Ion implantation 3.1.5 Plasma Enhanced Chemical Vapour Deposition (PECVD) of silicon nitride 3.1.6 Magnetron sputter deposition 3.2 Characterization techniques 3.2.1 Variable Angle Spectroscopic Ellipsometry (VASE) 3.2.2 Fourier Transform Infrared Spectroscopy (FTIR) 3.2.3 Microscopy 3.2.4 Electroluminescence and photoluminescence measurements 4 Experiments, results and discussion 4.1 Used substrates 4.1.1 Silicon substrates 4.1.2 Silicon-On-Insulator (SOI) substrates 4.2 Fabrication and characterization of distributed Bragg reflectors 4.2.1 Deposition and characterization of SiO2 4.2.2 Deposition of Si 4.2.3 Distributed Bragg Reflectors (DBR) 4.2.4 Conclusions 4.3 Design of Si pn-junction LED 4.4 Resonant microcavity LED with CoSi2 bottom mirror 4.4.1 Device preparation 4.4.2 Electrical Si diode characteristics 4.4.3 EL spectra 4.4.4 Conclusions 4.5 Si based microcavity LED with two DBRs 4.5.1 Test device 4.5.2 Device fabrication 4.5.3 LED on SOI versus MCLED 4.5.4 Conclusions 5 Summary and outlook 5.1 Summary 5.2 Outlook A Appendix A.1 The parametrization of optical constants A.1.1 Kramers-Kronig relations A.1.2 Forouhi-Bloomer dispersion formula A.1.3 Tauc-Lorentz dispersion formula A.1.4 Sellmeier dispersion formula A.2 Wafer holder List of publications Acknowledgements Declaration / Versicherung
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Potfajova, Jaroslava. "Silicon based microcavity enhanced light emitting diodes". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25451.

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Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1%. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1-lambda MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitransparent distributed Bragg reflector (DBR) on the top; b) 5.5-lambda MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5.5-lambda MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.
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Germer, Susette [Verfasser], Lars [Akademischer Betreuer] Rebohle, Wolfgang [Akademischer Betreuer] Skorupa, Johannes [Akademischer Betreuer] Heitmann y Manfred [Akademischer Betreuer] Helm. "Design and analysis of integrated waveguide structures and their coupling to silicon-based light emitters / Susette Germer. Gutachter: Johannes Heitmann ; Manfred Helm. Betreuer: Lars Rebohle ; Wolfgang Skorupa". Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://d-nb.info/1075123712/34.

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Germer, Susette Verfasser], Lars [Akademischer Betreuer] [Rebohle, Wolfgang [Akademischer Betreuer] Skorupa, Johannes [Akademischer Betreuer] Heitmann y Manfred [Akademischer Betreuer] Helm. "Design and analysis of integrated waveguide structures and their coupling to silicon-based light emitters / Susette Germer. Gutachter: Johannes Heitmann ; Manfred Helm. Betreuer: Lars Rebohle ; Wolfgang Skorupa". Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://d-nb.info/1075123712/34.

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Arciniegas, Carlos Andres Gonzalez. "Properties of the light emitted by a silicon on-chip optical parametric oscillator (OPO)". Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-22112017-153330/.

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The Optical Parametric Oscillator (OPO) has been one of the most versatile source of non-classical states of light. Usual configurations of such devices are a macroscopic second order nonlinear crystals inside an optical cavity. Recently the use of silicon photonics techniques allowed the implementation of high quality factor microcavities and OPOs which include several technological advantages over usual configuration as a small size, bigger bandwidth, CMOS compatibility, facility to engineer the dispersion properties and compatibility with commercial optical fiber communications. Nevertheless the nonlinearity present within these systems is a third order nonlinearity for which theoretical calculations lack in the literature. Here we describe theoretically the quantum properties of the light generated in an OPO with a third order nonlinearity. We showed that the effects of phase modulation (which are not present in the second order nonlinearity) and dispersion are determinant in the way that oscillation and entanglement is produced in the system. Despite of these effects, bipartite and tripartite entanglement is predicted with the use of the Schmidt modes formalism. We also describe the system when there are more modes exited within the cavity and a frequency comb is formed. In such a situation, using again the Schmidt modes formalism, multipartite entanglement was predicted as well.
O oscilador paramétrico ótico (OPO) tem sido uma fonte muito versátil de estados não clássicos da luz. A configuração usual destes OPOs consiste em um cristal macroscópico com não linearidade de segunda ordem no interior de uma cavidade ótica. Recentemente, devido ao desenvolvimento da fotonica de silício, foi possível a implementação de micro- cavidades óticas e OPOs que possuem varias vantagens sobre OPOs usuais. Não entanto a não linearidade destes sistemas é de terceira ordem. Neste trabalho, descrevemos teoricamente as propriedades quânticas da luz gerada num OPO com não linearidade de terceira ordem. Mostra-se que os efeitos de modulação de fase (não presentes na não linearidade de segunda ordem) e a dispersão são determinantes para a geração e o emaranhamento produzido no sistema. Emaranhamento bi e tri partito foi predito teoricamente usando o formalismo de modos de Schmidt. Também foi feita uma descrição quando mais modos da cavidade são excitados gerando um pente de frequência. Nesta situação. e utilizando novamente o formalismo de modos de Schmidt, foi predito emaranhamento multimodo destes sistemas.
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Lai, Jiun-Hong. "Development of low-cost high-efficiency commercial-ready advanced silicon solar cells". Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/52234.

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The objective of the research in this thesis is to develop manufacturable high-efficiency silicon solar cells at low-cost through advanced cell design and technological innovations using industrially feasible processes and equipment on commercial grade Czochralski (Cz) large-area (239 cm2) silicon wafers. This is accomplished by reducing both the electrical and optical losses in solar cells through fundamental understanding, applied research and demonstrating the success by fabricating large-area commercial ready cells with much higher efficiency than the traditional Si cells. By developing and integrating multiple efficiency enhancement features, namely low-cost high sheet resistance homogeneous emitter, optimized surface passivation, optimized rear reflector, back line contacts, and improved screen-printing with narrow grid lines, 20.8% efficient screen-printed PERC (passivated emitter and rear cell) solar cells were achieved on commercial grade 239 cm2 p-type Cz silicon wafers.
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Libros sobre el tema "Light emitters in silicon"

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Shur, Michael S. y Artūras Žukauskas, eds. UV Solid-State Light Emitters and Detectors. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9.

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NATO Advanced Research Workshop (2003 Vilnius, Lithuania). UV solid-state light emitters and detectors. Boston: Kluwer Academic Publishers, 2004.

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AG, Siemens. Silicon photodetectors and infrared emitters data book 1985/86. Mu nchen: Siemens Aktiengesellschaft, 1985.

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Symposium E on Light Emission from Silicon (1993 Strasbourg, France). Light emission from silicon. Amsterdam: North-Holland, 1994.

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Woodhead, Christopher. Enhancing the Light Output of Solid-State Emitters. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-95013-6.

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Ling, Bo. Nanorod fabrications and its potential application in light emitters. Hauppauge, N.Y: Nova Science Pub., 2011.

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Gardelis, S. Light emission from porous silicon. Manchester: UMIST, 1993.

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Ossicini, Stefano, Lorenzo Pavesi y Francesco Priolo. Light Emitting Silicon for Microphotonics. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/b13588.

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Nakamura, Shuji. The blue laser diode: GaN based light emitters and lasers. Berlin: Springer, 1997.

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Ohtsu, Motoichi. Silicon Light-Emitting Diodes and Lasers. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-42014-1.

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Capítulos de libros sobre el tema "Light emitters in silicon"

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Zimmermann, Horst. "Silicon Light Emitters". En Springer Series in Optical Sciences, 237–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-01521-2_9.

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Zimmermann, Horst. "Silicon Light Emitters". En Springer Series in Photonics, 187–201. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-662-04018-8_9.

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Pellegrino, Paolo, Olivier Jambois, Se-Young Seo y Blas Garrido. "Chapter 13 Nanostructured Silicon Light Emitters". En Silicon Nanophotonics: Basic Principles, Present Status, and Perspectives, 2nd Ed, 393–428. Penthouse Level, Suntec Tower 3, 8 Temasek Boulevard, Singapore 038988: Pan Stanford Publishing Pte. Ltd., 2016. http://dx.doi.org/10.1201/9781315364797-14.

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Stange, D., C. Schulte-Braucks, N. von den Driesch, S. Wirths, G. Mussler, S. Lenk, T. Stoica et al. "High Sn-Content GeSn Light Emitters for Silicon Photonics". En Future Trends in Microelectronics, 181–93. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781119069225.ch2-6.

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Kittler, Martin, T. Arguirov, Winfried Seifert, X. Yu y M. Reiche. "Silicon Based Light Emitters for On-Chip Optical Interconnects". En Solid State Phenomena, 749–54. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-13-2.749.

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Lockwood, D. J. y L. Tsybeskov. "Three-Dimensional Silicon–Germanium Nanostructures for CMOS-Compatible Light Emitters". En Nanotechnology for Electronics, Photonics, and Renewable Energy, 41–84. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7454-9_2.

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Fauchet, P. M., S. Chan, H. A. Lopez y K. D. Hirschman. "Silicon Light Emitters: Preparation, Properties, Limitations, and Integration with Microelectronic Circuitry". En Frontiers of Nano-Optoelectronic Systems, 99–119. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-010-0890-7_7.

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Palomino, Javier, Deepak Varshney, Brad R. Weiner y Gerardo Morell. "Silicon nanowires as electron field emitters". En Silicon Nanomaterials Sourcebook, 435–54. Boca Raton, FL: CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153544-22.

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Ha, J. S. "GaN and ZnO Light Emitters". En Oxide and Nitride Semiconductors, 415–57. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_9.

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Lange, Marlene A., Tim Kolbe y Martin Jekel. "Ultraviolet Light-Emitting Diodes for Water Disinfection". En III-Nitride Ultraviolet Emitters, 267–91. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_10.

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Actas de conferencias sobre el tema "Light emitters in silicon"

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Simons, A. J. "Solid-state electroluminescence from porous silicon". En IEE Colloquium on Wide Bandgap Semiconductor Light Emitters. IEE, 1996. http://dx.doi.org/10.1049/ic:19961225.

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Kasper, E. y M. Oehme. "Germanium Tin Light Emitters on Silicon". En 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.b-1-1.

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Buca, Dan, Detlev Gruetzmacher, Moustafa El Kurdi, Daniela Stange, Zoran Ikonic, Nils von den Driesch, Denis Rainko, Hans Sigg y Jean-Michel Hartmann. "Strain engineering in SiGeSn/GeSn heterostructures for light emitters (Conference Presentation)". En Silicon Photonics XIV, editado por Graham T. Reed y Andrew P. Knights. SPIE, 2019. http://dx.doi.org/10.1117/12.2511367.

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Makarova, Maria, Jelena Vuckovic, Hiroyuki Sanda y Yoshio Nishi. "Silicon-based photonic crystal nanocavity light emitters". En 2006 IEEE LEOS Annual Meeting. IEEE, 2006. http://dx.doi.org/10.1109/leos.2006.279018.

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Makarova, Maria, Jelena Vuckovic, Hiroyuki Sanda y Yoshio Nishi. "Two-dimensional porous silicon photonic crystal light emitters". En 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4627619.

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Bogalecki, Alfons W., Monuko du Plessis, Petrus J. Venter y Christo Janse van Rensburg. "Spectral characteristics of electroluminescent silicon CMOS light emitters". En SPIE OPTO, editado por Joel Kubby y Graham T. Reed. SPIE, 2012. http://dx.doi.org/10.1117/12.907923.

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Bayram, C. y R. Liu. "Cubic phase light emitters hetero-integrated on silicon". En 2017 IEEE Photonics Conference (IPC). IEEE, 2017. http://dx.doi.org/10.1109/ipcon.2017.8115994.

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Goosen, Marius E., Petrus J. Venter, Monuko du Plessis, Ilse J. Nell, Alfons W. Bogalecki y Pieter Rademeyer. "High-speed CMOS optical communication using silicon light emitters". En SPIE OPTO, editado por Alexei L. Glebov y Ray T. Chen. SPIE, 2011. http://dx.doi.org/10.1117/12.875112.

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Pavesi, Lorenzo. "Silicon light emitters and amplifiers: state of the art". En Integrated Optoelectronic Devices 2006, editado por Joel A. Kubby y Graham T. Reed. SPIE, 2006. http://dx.doi.org/10.1117/12.651026.

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Schmiedeke, Paul, Nitin Mukhundhan, Andreas Thurn, Akhil Ajay, Thomas Stettner, Jochen Bissinger, Hyowon Jeong et al. "Heterogeneous III-V Nanowire Lasers and Quantum Dot Emitters on Silicon Photonic Circuits". En Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/iprsn.2022.itu3b.4.

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Resumen
Recent progress in III-V nanowire (NW) light sources integrated onto Si (quantum) photonic circuits is presented, illustrating key results for low-threshold vertical-cavity NW-lasers and integrated NW-quantum emitters with efficient light coupling to Si waveguides.
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Informes sobre el tema "Light emitters in silicon"

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Vladimir Dmitriev. Ultra High p-doping Material Research for GaN Based Light Emitters. Office of Scientific and Technical Information (OSTI), junio de 2007. http://dx.doi.org/10.2172/966358.

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Ma, Xuedan. Investigation of light-matter interactions: Photoluminescence properties of individual quantum emitters. Office of Scientific and Technical Information (OSTI), septiembre de 2014. http://dx.doi.org/10.2172/1156834.

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SPIRE CORP BEDFORD MA. Silicon-Based Blue Light Emitting Diode. Fort Belvoir, VA: Defense Technical Information Center, diciembre de 1993. http://dx.doi.org/10.21236/ada282382.

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Figiel, Jeffrey James, Mary Hagerott Crawford, Michael Anthony Banas, Darcie Farrow, Andrew M. Armstrong, Darwin Keith Serkland, Andrew Alan Allerman y Randal L. Schmitt. Final LDRD report : development of advanced UV light emitters and biological agent detection strategies. Office of Scientific and Technical Information (OSTI), diciembre de 2007. http://dx.doi.org/10.2172/950095.

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Ronzhin, Anatoly. Silicon timing response to different laser light. Office of Scientific and Technical Information (OSTI), enero de 2017. http://dx.doi.org/10.2172/1395486.

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Shih, Y. C. Formation of amorphous silicon by light ion damage. Office of Scientific and Technical Information (OSTI), diciembre de 1985. http://dx.doi.org/10.2172/6144257.

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Safavi-Naeini, Amir H., Simon Groeblacher, Jeff T. Hill, Jasper Chan, Markus Aspelmeyer y Oskar Painter. Squeezing of Light via Reflection from a Silicon Micromechanical Resonator. Fort Belvoir, VA: Defense Technical Information Center, marzo de 2013. http://dx.doi.org/10.21236/ada584019.

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Hall, R. B., J. A. Rand, D. H. Ford y A. E. Ingram. Light-trapped, interconnected, Silicon-Film{trademark} modules. Final technical status report. Office of Scientific and Technical Information (OSTI), abril de 1998. http://dx.doi.org/10.2172/653971.

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Bragg-Sitton, Shannon M. Light Water Reactor Sustainability Program Status of Silicon Carbide Joining Technology Development. Office of Scientific and Technical Information (OSTI), septiembre de 2013. http://dx.doi.org/10.2172/1122120.

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Cheng, Hung H., G. Sun y R. S. Soref. Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate. Fort Belvoir, VA: Defense Technical Information Center, abril de 2015. http://dx.doi.org/10.21236/ada615859.

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