Artículos de revistas sobre el tema "Leakage Current Density"
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Kawahara, Takamitsu, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi, Masayuki Abe, Hiroyuki Nagasawa, Bernd Zippelius y Gerhard Pensl. "Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC". Materials Science Forum 645-648 (abril de 2010): 339–42. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.339.
Texto completoTamada, Minoru, Yuji Noguchi y Masaru Miyayama. "Defects and Leakage Current in PbTiO3 Single Crystals". Key Engineering Materials 350 (octubre de 2007): 77–80. http://dx.doi.org/10.4028/www.scientific.net/kem.350.77.
Texto completoKim, Hyung Chul, Moon Seob Han, Hyun June Park, Dong Uk Jang, Gyung Suk Kil y Nirmal Kumar Nair. "Consideration of Uncertainty in Diagnosis for Railway Arrester". Key Engineering Materials 321-323 (octubre de 2006): 1507–12. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.1507.
Texto completoIshikawa, Tsuyoshi, T. Katsuno, Y. Watanabe, H. Fujiwara y T. Endo. "Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode". Materials Science Forum 717-720 (mayo de 2012): 371–74. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.371.
Texto completoHirokazu, Fujiwara, T. Katsuno, Tsuyoshi Ishikawa, H. Naruoka, Masaki Konishi, T. Endo, Y. Watanabe et al. "Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes". Materials Science Forum 717-720 (mayo de 2012): 911–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.911.
Texto completoUno, Shigeyasu, Kazuaki Deguchi, Yoshinari Kamakura y Kenji Taniguchi. "Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current". Japanese Journal of Applied Physics 41, Part 1, No. 4B (30 de abril de 2002): 2645–49. http://dx.doi.org/10.1143/jjap.41.2645.
Texto completoKim, Hyojung, Jongwoo Park, Junehwan Kim, Nara Lee, Gaeun Lee, Soonkon Kim, Pyungho Choi, Dohyun Beak, Jangkun Song y Byoungdeog Choi. "Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement". Journal of Nanoscience and Nanotechnology 21, n.º 3 (1 de marzo de 2021): 1966–70. http://dx.doi.org/10.1166/jnn.2021.18901.
Texto completoNegara, I. Made Yulistya, I. G. N. Satriyadi Hernanda, Dimas Anton Asfani, Mira Kusuma Wardani, Bonifacius Kevin Yegar y Reynaldi Syahril. "Effect of Seawater and Fly Ash Contaminants on Insulator Surfaces Made of Polymer Based on Finite Element Method". Energies 14, n.º 24 (20 de diciembre de 2021): 8581. http://dx.doi.org/10.3390/en14248581.
Texto completoGeng, Kuiwei, Ditao Chen, Quanbin Zhou y Hong Wang. "AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer". Electronics 7, n.º 12 (10 de diciembre de 2018): 416. http://dx.doi.org/10.3390/electronics7120416.
Texto completoAlbertin, Katia F., M. A. Valle y I. Pereyra. "Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric". Journal of Integrated Circuits and Systems 2, n.º 2 (18 de noviembre de 2007): 89–93. http://dx.doi.org/10.29292/jics.v2i2.272.
Texto completoSikula, J., J. Hlavka, J. Pavelka, V. Sedlakova, L. Grmela, M. Tacano y S. Hashiguchi. "Low Frequency Noise of Tantalum Capacitors". Active and Passive Electronic Components 25, n.º 2 (2002): 161–67. http://dx.doi.org/10.1080/08827510212341.
Texto completoHirokazu, Fujiwara, Masaki Konishi, T. Ohnishi, T. Nakamura, Kimimori Hamada, T. Katsuno, Y. Watanabe et al. "Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density". Materials Science Forum 679-680 (marzo de 2011): 694–97. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.694.
Texto completoChen, Zhisheng, Renjun Song, Qiang Huo, Qirui Ren, Chenrui Zhang, Linan Li y Feng Zhang. "Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array". Micromachines 12, n.º 6 (26 de mayo de 2021): 614. http://dx.doi.org/10.3390/mi12060614.
Texto completoNurbaya, Z. y M. Rusop. "Low Leakage Current Density Behaviour of Nanofilms PbTiO3 Based MIM Capacitor". Advanced Science Letters 20, n.º 10 (1 de octubre de 2014): 2258–63. http://dx.doi.org/10.1166/asl.2014.5712.
Texto completoWöhler, Franziska J., Ingo Münch y Werner Wagner. "Electric leakage current density in phase field simulations for nanogenerator concepts". PAMM 17, n.º 1 (diciembre de 2017): 575–76. http://dx.doi.org/10.1002/pamm.201710257.
Texto completoIn, Tae-Gyoung, Sunggi Baik y Sangsub Kim. "Leakage current of Al- or Nb-doped Ba0.5Sr0.5TiO3 thin films by rf magnetron sputtering". Journal of Materials Research 13, n.º 4 (abril de 1998): 990–94. http://dx.doi.org/10.1557/jmr.1998.0139.
Texto completoYu, Tong, Yun Liu, Binbin Huang, Xiaoyang Chen y Ping Yu. "Modulating multiple leakage current mechanisms in the [LaNiO3/Ba0.67Sr0.33TiO3]3 multilayer heterostructure thin films via dielectrics/electrode interface modifications". AIP Advances 12, n.º 12 (1 de diciembre de 2022): 125309. http://dx.doi.org/10.1063/5.0129495.
Texto completoVoitsekhovskii, A. V., S. N. Nesmelov, S. M. Dzyadukh, S. A. Dvoretsky, N. N. Mikhailov, G. Yu Sidorov y M. V. Yakushev. "Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave inred detectors". Izvestiya vysshikh uchebnykh zavedenii. Fizika, n.º 5 (2021): 3–8. http://dx.doi.org/10.17223/00213411/64/5/3.
Texto completoWani, Waseem Ahmad, Nilofar Naaz, B. Harihara Venkataraman, Souvik Kundu y Kannan Ramaswamy. "Significantly reduced leakage current density in Mn-doped BiFeO3 thin films deposited using spin coating technique". Journal of Physics: Conference Series 2070, n.º 1 (1 de noviembre de 2021): 012088. http://dx.doi.org/10.1088/1742-6596/2070/1/012088.
Texto completoTian, Dong Bin, Qi Feng Pan, Xiao Zhou He y Xuan Hong Zhang. "Reduce the Leakage Current of High Voltage Polymer Ta Electrolyte Capacitors". Materials Science Forum 852 (abril de 2016): 686–90. http://dx.doi.org/10.4028/www.scientific.net/msf.852.686.
Texto completoMahi, K. y H. Ait-Kaci. "Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics". Journal of Nano- and Electronic Physics 13, n.º 5 (2021): 05019–1. http://dx.doi.org/10.21272/jnep.13(5).05019.
Texto completoKudou, Chiaki, Hirokuni Asamizu, Kentaro Tamura, Johji Nishio, Keiko Masumoto, Kazutoshi Kojima y Toshiyuki Ohno. "Influence of Epi-Layer Growth Pits on SiC Device Characteristics". Materials Science Forum 821-823 (junio de 2015): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.177.
Texto completoHe, Mo, Qi Bin Liu y Chang Qi Xia. "Study on Microstructure of ZnO Lighting Arrester with High Voltage Gradient". Advanced Materials Research 415-417 (diciembre de 2011): 1070–73. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1070.
Texto completoKim, Nam-Kyeong, Soon-Gil Yoon, Won-Jae Lee y Ho-Gi Kim. "Electrical and Structural Properties of SrTiO3 Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition". Journal of Materials Research 12, n.º 4 (abril de 1997): 1160–64. http://dx.doi.org/10.1557/jmr.1997.0160.
Texto completoLee, Jae-Hoon, Jung-Hee Lee y Ki-Sik Im. "Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes". Crystals 11, n.º 2 (21 de enero de 2021): 87. http://dx.doi.org/10.3390/cryst11020087.
Texto completoSohail, Muhammad, Salman Amin, Yasir Butt y Muhammad Bin Zubaid Ramay. "Aging Performance of Low-Density Polyethylene/Silicone Rubber Blends Insulators Under Contaminated Conditions". Pakistan Journal of Engineering and Technology 5, n.º 1 (10 de marzo de 2022): 29–34. http://dx.doi.org/10.51846/vol5iss1pp29-34.
Texto completoRamos, D., M. Delmas, R. Ivanov, D. Evans, L. Žurauskaitė, S. Almqvist, S. Becanovic, L. Höglund, E. Costard y P. E. Hellström. "Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors". Journal of Applied Physics 132, n.º 20 (28 de noviembre de 2022): 204501. http://dx.doi.org/10.1063/5.0106878.
Texto completoPengchan, W., T. Phetchakul y Amporn Poyai. "Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method". Advanced Materials Research 55-57 (agosto de 2008): 765–68. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.765.
Texto completoKang, H. D. "Trap-density dependent leakage current behavior of lead zirconate titanite thin film". Thin Solid Films 516, n.º 8 (febrero de 2008): 2014–16. http://dx.doi.org/10.1016/j.tsf.2007.06.167.
Texto completoChandel, Shilpi, Preeti Thakur y Atul Thakur. "Low leakage current density and improved dielectric behavior of BiFexO3 nano-ceramics". Journal of Alloys and Compounds 845 (diciembre de 2020): 156287. http://dx.doi.org/10.1016/j.jallcom.2020.156287.
Texto completoMousavi, Navid, Tohid Rahimi y Homayoun Meshgin Kelk. "Reduction EMI of BLDC Motor Drive Based on Software Analysis". Advances in Materials Science and Engineering 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/1497360.
Texto completoTan, Suo Kui, Xiao Ping Song, Li Qiao, Hong Yan Guo, Song Ji y Hong Zhao. "The Effect of Heat Treatment Temperature on Property and Structure of Ni Group Core-Shell Particles ER". Advanced Materials Research 213 (febrero de 2011): 437–40. http://dx.doi.org/10.4028/www.scientific.net/amr.213.437.
Texto completoLi, Li y Qi Bin Liu. "Effect of Technological Parameters on the Microstructure and Electrical Properties of ZnO Varistors". Advanced Materials Research 820 (septiembre de 2013): 208–11. http://dx.doi.org/10.4028/www.scientific.net/amr.820.208.
Texto completoSalem, Ali Ahmed, Kwan Yiew Lau, Mohd Taufiq Ishak, Zulkurnain Abdul-Malek, Samir A. Al-Gailani, Salem Mgammal Al-Ameri, Ammar Mohammed, Abdulaziz Ali Saleh Alashbi y Sherif S. M. Ghoneim. "Monitoring Porcelain Insulator Condition Based on Leakage Current Characteristics". Materials 15, n.º 18 (14 de septiembre de 2022): 6370. http://dx.doi.org/10.3390/ma15186370.
Texto completoSchoeck, Johannes, Jonas Buettner, Mathias Rommel, Tobias Erlbacher y Anton J. Bauer. "4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density". Materials Science Forum 897 (mayo de 2017): 427–30. http://dx.doi.org/10.4028/www.scientific.net/msf.897.427.
Texto completoPEREZ, J. P., P. SIGNORET, M. MYARA, I. ASAAD y B. ORSAL. "SURFACE LEAKAGE CURRENT RELATED $\frac{1}{f}$ NOISE IN NONILLUMINATED FOCAL PLANE ARRAY Hg1-xCdxTe DIODE". Fluctuation and Noise Letters 03, n.º 04 (diciembre de 2003): L379—L388. http://dx.doi.org/10.1142/s0219477503001488.
Texto completoTitthikusumarn, Wiwa, Wittaya Jakpetch y Wisut Titiroongruang. "Minority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation". Advanced Materials Research 811 (septiembre de 2013): 200–204. http://dx.doi.org/10.4028/www.scientific.net/amr.811.200.
Texto completoShi, Yan, Xing Liang Jiang, Qi Fa Wan, Xiong Wu y Tao Xu. "Measurement and Analysis of the Leakage Current on the Surface of Polluted Suspension Ceramic Insulator". Applied Mechanics and Materials 48-49 (febrero de 2011): 668–74. http://dx.doi.org/10.4028/www.scientific.net/amm.48-49.668.
Texto completoWang, Yang, De Xiang Fu, Wen Zhi Li, Jian Hua Wang, Wen Hao Zhang, Yong Tao Li, Sheng Li Liu, Liang Xie y Hong Guang Zhang. "Effect of Annealing on Room Temperature Multiferroics of BiFe1-xCoxO3". Materials Science Forum 859 (mayo de 2016): 30–35. http://dx.doi.org/10.4028/www.scientific.net/msf.859.30.
Texto completoUmezawa, Hitoshi, Kazuhiro Ikeda, Ramanujam Kumaresan, Natsuo Tatsumi y Shinichi Shikata. "Device Characteristics Dependence on Diamond SDBs Area". Materials Science Forum 615-617 (marzo de 2009): 1003–6. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.1003.
Texto completoAtalla, M. R. M., S. Assali, S. Koelling, A. Attiaoui y O. Moutanabbir. "Dark current in monolithic extended-SWIR GeSn PIN photodetectors". Applied Physics Letters 122, n.º 3 (16 de enero de 2023): 031103. http://dx.doi.org/10.1063/5.0124720.
Texto completoHuang, Yujie, Jing Yang, Degang Zhao, Yuheng Zhang, Zongshun Liu, Feng Liang y Ping Chen. "A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition". Nanomaterials 13, n.º 3 (28 de enero de 2023): 525. http://dx.doi.org/10.3390/nano13030525.
Texto completoWang, Yekan, Michael Evan Liao, Kenny Huynh, William Olsen, James C. Gallagher, Travis J. Anderson, Xianrong Huang, Michael Wojcik y Mark S. Goorsky. "Impact of Substrate Defects on Vertical GaN Device Leakage Behavior". ECS Meeting Abstracts MA2022-01, n.º 31 (7 de julio de 2022): 1309. http://dx.doi.org/10.1149/ma2022-01311309mtgabs.
Texto completoWu, Qiuju, Qing Yu, Gang He, Wenhao Wang, Jinyu Lu, Bo Yao, Shiyan Liu y Zebo Fang. "Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment". Nanomaterials 13, n.º 11 (26 de mayo de 2023): 1740. http://dx.doi.org/10.3390/nano13111740.
Texto completoJayadevan, Kampurath P., Chi-Yi Liu y Tseung-Yuen Tseng. "Surface Chemical and Leakage Current Density Characteristics of Nanocrystalline Ag-Ba0.5Sr0.5TiO3 Thin Films". Journal of the American Ceramic Society 88, n.º 9 (septiembre de 2005): 2456–60. http://dx.doi.org/10.1111/j.1551-2916.2005.00441.x.
Texto completoWu, Min-Ci, Yi-Hsin Ting, Jui-Yuan Chen y Wen-Wei Wu. "A Novel Three-Dimensional High Density Vertical Rram Arrays with Reduced Leakage Current". ECS Meeting Abstracts MA2020-01, n.º 22 (1 de mayo de 2020): 1298. http://dx.doi.org/10.1149/ma2020-01221298mtgabs.
Texto completoSimões, A. Z., L. S. Cavalcante, F. Moura, E. Longo y J. A. Varela. "Structure, ferroelectric/magnetoelectric properties and leakage current density of (Bi0.85Nd0.15)FeO3 thin films". Journal of Alloys and Compounds 509, n.º 17 (abril de 2011): 5326–35. http://dx.doi.org/10.1016/j.jallcom.2011.02.030.
Texto completoEl-Hag, Ayman H., S. H. Jayaram y E. A. Cherney. "Calculation of leakage current density of silicone rubber insulators under accelerated aging conditions". Journal of Electrostatics 67, n.º 1 (febrero de 2009): 48–53. http://dx.doi.org/10.1016/j.elstat.2008.11.006.
Texto completoAkashe, Shyam y Sanjay Sharma. "High density and low leakage current based SRAM cell using 45 nm technology". International Journal of Electronics 100, n.º 4 (abril de 2013): 536–52. http://dx.doi.org/10.1080/00207217.2012.713023.
Texto completoSalem, Ali Ahmed, Kwan Yiew Lau, Zulkurnain Abdul-Malek, Nabil Mohammed, Abdullah M. Al-Shaalan, Abdullrahman A. Al-Shamma’a y Hassan M. H. Farh. "Polymeric Insulator Conditions Estimation by Using Leakage Current Characteristics Based on Simulation and Experimental Investigation". Polymers 14, n.º 4 (14 de febrero de 2022): 737. http://dx.doi.org/10.3390/polym14040737.
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