Tesis sobre el tema "Ion-sensitive"
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Ritjareonwattu, Supachai. "Ion sensitive organic field effect transistors". Thesis, Durham University, 2011. http://etheses.dur.ac.uk/3292/.
Texto completoWilson, James Charles. "Solid state contacts to ion sensitive glass". Thesis, University of Edinburgh, 1991. http://hdl.handle.net/1842/12154.
Texto completoRodrigues, Frâncio Souza Berti. "Fabrication of ion sensitive field effect transistors". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2018. http://hdl.handle.net/10183/183198.
Texto completoJames, A. P. "Equilibrium and swelling properties of ion-sensitive holograms". Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605028.
Texto completoMcCavera, Samantha J. C. "An invermectin sensitive ion channel from haemonchus contortus". Thesis, University of Bath, 2008. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.512265.
Texto completoValdes-Perezgasga, Francisco. "Intramyocardial pH measurements using ion-sensitive field effect transistors". Thesis, University of Newcastle Upon Tyne, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.254191.
Texto completoFan, H. C. "Modulation of the thermo- and hypotonicity-sensitive ion channel TRPV4". Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598933.
Texto completoEltony, Amira M. (Amira Madeleine). "Sensitive, 3D micromotion compensation in a surface-electrode ion trap". Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/84871.
Texto completoCataloged from PDF version of thesis.
Includes bibliographical references (pages [47]-53).
Following successful demonstrations of quantum algorithms and error correction with a handful of trapped ions in a macroscopic, machined Paul trap, there is a growing effort to move towards microfabricated traps with all the electrodes on a single chip. These traps, known as surface-electrode ion traps, are more amenable to being shrunk in size and replicated, or integrated with optical components and electronic devices. However, in the shift towards surface-electrode traps, and as traps are miniaturized in general, laser beams are brought closer to electrode surfaces, exacerbating laser-induced charging. Because of their charge, trapped ions are extremely sensitive to stray charges that accumulate on the trap surface. The DC potentials caused by stray charge displace the ion from the null of the RF trapping field, resulting in a fast, driven motion of the ion (known as micromotion) which hinders quantum operations by broadening transitions and causing decoherence. In a surface trap, micromotion detection is difficult as the laser beams used for measurement typically cannot crash into the trap, obscuring ion offsets out of the trap plane. Existing methods for micromotion detection permit ion positioning accurate to the ground state wavepacket size (of order 10 nm), but cannot identify ion offsets out of the trap plane with the same accuracy. Schemes for sensitive compensation often have restrictive requirements such as access to a narrow atomic transition. We introduce a new approach, which permits out-of-plane micromotion compensation to within 10s of nanometers with minimal overhead. Our technique synchronously detects ion excitation along the trap axes when it is driven by secular-frequency sidebands added to the RF electrodes; the excitation amplitude is proportional to the offset from the RF null. We make a detailed theoretical comparison with other techniques for micromotion compensation and demonstrate our technique experimentally.
by Amira M. Eltony.
S.M.
Lieu, Deborah Kuo-TI. "Regulation of flow-sensitive ion channels in vascular endothelial cells /". For electronic version search Digital dissertations database. Restricted to UC campuses. Access is free to UC campus dissertations, 2002. http://uclibs.org/PID/11984.
Texto completoPremanode, Bhusana. "Current-mode readout toplogies for ion-sensitive field effect transistors". Thesis, Imperial College London, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.500038.
Texto completoMak, Stephanie Wai Yin. "Modulation of temperature sensitive ion channels TRPV1 and TRPM8 by Bradykinin". Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611520.
Texto completoPurushothaman, Sunil. "The application of ion sensitive field effect transistor technology to DNA sequencing". Thesis, Imperial College London, 2006. http://hdl.handle.net/10044/1/11420.
Texto completoQuesnell, Rebecca R. "Glucocorticoids induce amiloride-sensitive ion transport by pathways that are tissue-specific". Diss., Manhattan, Kan. : Kansas State University, 2007. http://hdl.handle.net/2097/265.
Texto completoSohbati, Mohammadreza. "Circuits and systems for DNA detection by ion-sensitive field effect transistor". Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/25525.
Texto completoGeorgiou, Pantelakis. "Chemical bionics : a novel design approach using ion sensitive field effect transistors". Thesis, Imperial College London, 2008. http://hdl.handle.net/10044/1/5992.
Texto completoGarg, Vivek. "Regulation of ATP-Sensitive Potassium Channels in the Heart". The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1238179085.
Texto completoDodgson, John. "Ion-selective field-effect transistors with fast atom bombardment sputtered membranes for pH, sodium and potassium measurement". Thesis, University of Newcastle Upon Tyne, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283651.
Texto completoRani, Dipti [Verfasser]. "Label-free detection of biomolecules using silicon nanowire ion-sensitive field-effect transistor devices / Dipti Rani". Gießen : Universitätsbibliothek, 2018. http://d-nb.info/1156851343/34.
Texto completoLöhrer, Daniel Verfasser], Dominik [Akademischer Betreuer] Wiemuth y Marc [Akademischer Betreuer] [Spehr. "Proteinbiochemische und elektrophysiologische Charakterisierung des bile acid-sensitive ion channels BASIC / Daniel Löhrer ; Dominik Wiemuth, Marc Spehr". Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1162499036/34.
Texto completoLöhrer, Daniel [Verfasser], Dominik Akademischer Betreuer] Wiemuth y Marc [Akademischer Betreuer] [Spehr. "Proteinbiochemische und elektrophysiologische Charakterisierung des bile acid-sensitive ion channels BASIC / Daniel Löhrer ; Dominik Wiemuth, Marc Spehr". Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1162499036/34.
Texto completoPlumberg, Christopher. "Event-by-event fluctuations in relativistic heavy-ion collisions and their consequences for azimuthally sensitive Hanbury Brown-Twiss interferometry". The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1468503395.
Texto completoChavez, Porras Fernando. "Sistema de medida baseado em ISFETs (Ion Sensitive Field Effect Transistor) para determinação de acidos e bases em soluções aquosas". [s.n.], 1996. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259223.
Texto completoDissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica
Made available in DSpace on 2018-07-21T13:54:41Z (GMT). No. of bitstreams: 1 ChavezPorras_Fernando_M.pdf: 7348729 bytes, checksum: 99e9c30ec2191af662ee58af3b56feb0 (MD5) Previous issue date: 1996
Resumo: Neste trabalho é primeiro apresentada uma nova classificação dos sensores eletroquímicos, objetivando fazer um paralelo entre os sensores eletroquímicos convencionais e a crescente geração de sensores eletroquímicos microeletrônicos, ou aqueles fabricados com técnicas de fabricação de circuitos integrados. Em seguida, são apresentados alguns resultados práticos relacionados com o desenvolvimento de um sensor coulométrico baseado em ISFETs. Assim, é proposto um esquema de medida conformado por: dois sensores coulométricos conectados em forma diferencial, e por um circuito eletrônico simples que realiza o cálculo do tempo de titulação a partir da segunda derivada da sua respectiva curva de titulação. O desenvolvimento do sistema inclui: a) o projeto e fabricação dos sensores coulométricos, b) o projeto e implementação com circuitos discretos de : um circuito eletrônico para o processamento do sinal de saída dos ISFETs e uma fonte de corrente simples e sua lógica de controle necessária para gerar pulsos de corrente entre 0-15 JlA. O sistema proposto é testado realizando titulações coulométricas de ácido acético, e serve para determinar concentrações de até 0.007 moles/litro usando pulsos de corrente entre 0-15 JlA. Também é apresentado um modelo simples que nos permite comprovar os resultados das medidas. Após é feita uma discussão relacionada com o mecanismo de operação do dispositivo. Finalmente é apresentado o processo de fabricação dos sensores coulométricos, o qual é baseado em um processo de fabricação de ISFETs padrão
Abstract: Firstly, in this work, is showed a new classification of the electrochemical sensors intending to make a paralell between conventional electrochemical sensors and the new generation of electrochemical microelectronic sensors, or that, fabricated with integrated circuits technology. Next, it is showed some practical results related with developing a based on ISFET coulometric sensor. Therefore, it is proposed a measurement set-up conformed by: two coulometric sensors connected in a diferencial way, and an electronic circuit able to compute the titration time from its second derivative of the respective titulation curve. This work involves: a) the design and fabrication of the coulometric sensors, b) the design and implementation with discret circuits of: an electronic circuit for processing the ISFETs output signal and a simple current source and its necessary controllogic able to supply current pulses of 0-15 J.1A. The proposed system is tested doing coulometric titrationof acetic acid, and is able to determine concentrations until 0.007moles/literusing coulometricpulses of 0-15 J.1A. It is also showna simpie model, which corroborate the measurements, and then is given a discussion related with the mechanism of operation of this device. Finally, it is also shown the fabrication process of the coulometric sensors, which is based on a standãrd ISFET fabrication process
Mestrado
Mestre em Engenharia Elétrica
Alatrag, Fatma. "Effects of Mg²⁺ pretreatment and the modulation of Mg²⁺-sensitive cardiac ion channels on Ca²⁺ paradox phenomenon in the heart". Master's thesis, University of Cape Town, 2016. http://hdl.handle.net/11427/20956.
Texto completoAgasid, Mark Tadashi y Mark Tadashi Agasid. "I. Development of Rapid Conductance-Based Protocols for Measuring Ion Channel Activity; II. Expression, Characterization, and Purification of the ATP-Sensitive, Inwardly-Rectifying K+ Channel, Kir6.2, and Ion Channel-Coupled Receptors". Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/623173.
Texto completoSoy, Esin. "Immobilization Of Proteins On Zeolite And Zeo-type Materials For Biosensor Applications Based On Conductometric Biosensors And Ion Sensitive Field Effect Transistors". Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613313/index.pdf.
Texto completoFromme, Ulrich Verfasser], Christoph F. [Akademischer Betreuer] Schmidt, Andreas [Gutachter] Neef, Tobias [Gutachter] [Moser, Florentin [Gutachter] Wörgötter, Stefan [Gutachter] Klumpp y Marc [Gutachter] Timme. "Investigation of voltage- and light-sensitive ion channels / Ulrich Fromme. Betreuer: Christoph F. Schmidt. Gutachter: Andreas Neef ; Tobias Moser ; Florentin Wörgötter ; Stefan Klumpp ; Marc Timme". Göttingen : Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2016. http://d-nb.info/1111100934/34.
Texto completoCapra, S. "DEVELOPMENT AND CHARACTERIZATION OF AN INNOVATIVE LOW-NOISE HIGH-DYNAMIC-RANGE VLSI CHARGE-SENSITIVE PREAMPLIFIER FOR SOLID-STATE DETECTORS EMPLOYED IN NUCLEAR PHYSICS EXPERIMENTS WITH RADIOACTIVE ION BEAMS". Doctoral thesis, Università degli Studi di Milano, 2016. http://hdl.handle.net/2434/359111.
Texto completoMaksimchuk, N. "Nanocrystalline Cerium Oxide Films for Microelectronic Biosensor Transducers". Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/34964.
Texto completoEschbaumer, Stephan [Verfasser], Günther [Akademischer Betreuer] Dollinger, Günther [Gutachter] Dollinger y Timo [Gutachter] Sajavaara. "A position sensitive time of flight setup for heavy ion elastic recoil detection analysis / Stephan Eschbaumer ; Gutachter: Günther Dollinger, Timo Sajavaara ; Akademischer Betreuer: Günther Dollinger ; Universität der Bundeswehr München, Fakultät für Luft- und Raumfahrttechnik". Neubiberg : Universitätsbibliothek der Universität der Bundeswehr München, 2017. http://d-nb.info/1163573310/34.
Texto completoBarman, Dipti Narayan. "pH sensitive fluorescent sensors". Diss., Columbia, Mo. : University of Missouri-Columbia, 2007. http://hdl.handle.net/10355/4972.
Texto completoThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on April 3, 2009) Includes bibliographical references.
Winschel, Christine A. "Accurate Methodology for Monitoring Biomembrane Events". VCU Scholars Compass, 2012. http://scholarscompass.vcu.edu/etd/2860.
Texto completoWickey, Kurtis J. "Developing a temperature sensitive tool for studying spin dissipation". The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1437252889.
Texto completoGuzmán, Laparra Gabriel Eduardo. "Use of affordable technology for the sensitive and specific diagnosis of onchocerciasis (river blindness) /". Stockholm, 2002. http://diss.kib.ki.se/2002/91-7349-321-x.
Texto completoO'Neal, Scott Thomas. "The role of ATP-sensitive inwardly rectifying potassium channels in the honey bee (Apis mellifera L.)". Diss., Virginia Tech, 2017. http://hdl.handle.net/10919/78344.
Texto completoPh. D.
Nunes, Ana Rita Silva Martins. "O2/CO2-sensitive cyclic AMP-signalling pathway in peripheral chemoreceptors". Doctoral thesis, Faculdade de Ciências Médicas. UNL, 2013. http://hdl.handle.net/10362/9153.
Texto completoGuo, Kunmei. "Functional assessment of the role of cyclic nucleotide-gates channel (CNGC10) and salt overly sensitive (SOS1) antiporter in salinity tolerance in Arabidopsis". University of Western Australia. Faculty of Natural and Agricultural Sciences, 2009. http://theses.library.uwa.edu.au/adt-WU2009.0063.
Texto completoNadel-Turonski, Pawel. "Experimental Studies of Neutron Emission Induced by Heavy-Ion Scattering". Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-3570.
Texto completo何建霖. "InN Based Hydrogen Ion Sensitive Field Effect Transistor". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/47796982434255140632.
Texto completo國立清華大學
奈米工程與微系統研究所
96
pH is a familiar noun in our daily life, it represents the concentration of hydrogen ion in a solution, the lower pH value means higher hydrogen ion concentration. pH value is significantly effective in many fields, such as biology, chemistry, agriculture and so on. The measurement of pH value is an important topic. An intrinsic surface electron accumulation layer is existed in indium nitride. The surface electron concentration is sensitive to the variation of environment. In order to bring surface electron in to full play, ultra thin InN film (~10nm) was used in this study. The pH sensor was realized by the form of Ion Sensitive Field Effect Transistor (ISFET). In the range of pH value 2 to 10, there is Nernst response 58.33mv/pH, which is very close to the theoretical value 59.16mv/pH calculated by Nernst equation. When operated in current mode and applied voltage 0.5V, the current variation was 37uA per pH, which is one order higher than the ISFET made by AlGaN/GaN heterostructure. It’s resulted from the property of surface electron accumulation. Many important performance factor of sensor was investigated, such as response time, detection limit, precision, etc. Finally, by the way of negative charged Au nanoparticles detection, it shows the potential to detect other charged particles or molecules.
Fromme, Ulrich. "Investigation of voltage- and light-sensitive ion channels". Doctoral thesis, 2016. http://hdl.handle.net/11858/00-1735-0000-0028-87F1-5.
Texto completoCHIA-MING, YANG y 楊家銘. "ISFET/REFET with Inorganic and Organic Ion-sensitive Membranes". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/66647722205522805034.
Texto completo長庚大學
電子工程研究所
94
For environmental protection, process control in industry, research and human body monitoring, chemical sensors have been widely applied to determine different analytes. To realize multi-ion micro sensor array, the ISFET/REFET structure was chosen due to the advantages of miniaturization viability, easy processing and low costs. For development of new pH-sensitive membranes, the systematic studies on the properties of various inorganic materials used in microelectronic such as: SiGe, HfO2 and Si3N4 were performed. The pH-sensing area of EIS structures was defined by the deposition of chemically resistant encapsulat - photosensitive epoxy resin, SU8 2005. Although SiGe membranes exhibited high sensitivity, 59.8 mV/pH, their stability was very poor. It was found that HfO2 layer directly deposited on Si could be a good alternative to replace the conventional stacked gate structure, which may economize the thermal oxidation process. With PDA treatment at 900°C, pH sensitivity, drift coefficient and hysteresis width for 8 nm thick HfO2 layer was 58.3 mV/pH, 0.65 mV/h and 1.7 mV, respectively. The pH sensitivity of Si3N4-ISFETs without extended source and drain areas, designed and fabricated in CGU was 40 mV/pH. The pH sensitivity and drift coefficient of Si3N4-ISFETs with extended source and drain areas made in ITE was 47.6 mV/pH and -0.68 mV/h, respectively. REFETs were fabricated by the deposition of organic PVC membranes on the top of Si3N4-ISFETs modified with HMDS. The pH sensitivity of REFETs with the optimized PVC membranes based on 60%-DNP was reduced to 10.8 mV/pH at linearity of 99.7% and lifetime - 15 days. The measurements were performed in IBIB PAN. It was stated that the developed inorganic and organic ion-sensitive membranes can be applied in ISFET/REFET structure. Based on the achievements in this study, other ion micro sensors can be also developed for smart sensor array application.
Li, Dong-Che y 李東哲. "CMOS Ion-Sensitive Field Effect Transistors for Dopamine Detection". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/59903003821424225041.
Texto completo國立清華大學
電子工程研究所
97
本研究目的在於開發出感測濃度達到fM(10-15 M)等級的多巴胺感測元件,此感測元件由TSMC CMOS 0.35 �慆製程製作而成,我們把從製程廠製作回來的晶片,經由一連串的後製程,首先經由硫酸濕蝕刻掉金屬層,再經由KOH濕蝕刻掉多晶矽,以露出我們所需要的感測區域,而完成了感測元件OGFET(開閘極場效電晶體)。 此篇論文的特點在於將感測元件與感測電路整合在一顆晶片上,而感測電路方面則是4乘4的感測陣列,感測電路原理為將感測元件電流轉換至數位脈波輸出的感測機制,有鑑於以往傳統式ISFET感測電路為電阻式放大器,但輸出的變化量都在mv(毫伏)範圍;而我們所設計的電路正好彌補了此不足,其優點在於能夠將大範圍的電流感測出來並且以數位脈波輸出,而我們所設計的電路感測電流範圍在40 nA ~6 �嫀之間。 在整個晶片完成了硫酸濕蝕刻等後製程後,必須在其感測表面進行分子固定化,用意在於能夠抓取我們想要量測的生物分子(在此為多巴胺),抓取到的多巴胺分子帶有負電,使得所量測的I-V曲線產生位移而能感測到fM(10-15 M)等級的多巴胺溶液。 我們在此篇論文中利用傳統CMOS製程開發出極靈敏的離子電晶體感測器,而能夠達到與奈米金線場效電晶體相同的感測靈敏度(NWFET);本研究最重要的地方在於能夠將感測元件與電路整合在一個系統中,這對於低成本開發無疑是一個絕對的幫助,且因晶片面積小而能夠達到隨身攜帶的目的,對於病人的即時偵測非常的有用。
Chang, Chieh-Feng y 張界烽. "CMOS Ion-Sensitive Field Effect Transistors for DNA Detection". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/mzza2h.
Texto completo國立清華大學
電子工程研究所
107
How to detect the disease of a patient is a very important issue in medical treatment. According to statistics, one third of people has been infected with hepatitis B virus, and the region of the highest hepatitis prevalence in the world occurs in Taiwan. If there is a rapid and simple method to detect a lower concentration of hepatitis B viral load in serum, it facilitates early diagnosis of hepatitis B virus infection and prevention of further transmission. Ion-sensitive field-effect transistors are presented in this case to get a real-time detection of a lower concentration DNA molecules (fM level). Ion-sensing field-effect transistors are fabricated using TSMC 0.35μm CMOS process. And then surface functionalization and DNA molecules are modified on the passivation of sensors by Self-assembled monolayers. In terms of circuit design, we design different sizes of ISFETs with interdigitated electrodes or planar electrodes to explore the characteristics of the sensors. The best sensitivity of the designs in this case is 32mV/pH. In the end, this scheme can be combined with the readout circuit for the measurement of several sensors and convert the ISFET current to a digital output signal. Due to DNA molecules have the negatively electrical property, the output frequency will be increased when target DNAs hybridize with probe DNAs.
Huang, Sha. "Highly sensitive fluorescent probes for the detection of zinc ion". 2008. http://etd.lib.fsu.edu/theses/available/etd-06162008-213314.
Texto completoAdvisor: Lei Zhu, Florida State University, College of Arts and Sciences, Dept. of Chemistry and Biochemistry. Title and description from dissertation home page (viewed Sept. 16, 2008). Document formatted into pages; contains xiii, 60 pages. Includes bibliographical references.
蘇智洺. "Study on Si3N4/SiO2 Gate Ion Sensitive Field Effect Transistor". Thesis, 1997. http://ndltd.ncl.edu.tw/handle/67206911087054432986.
Texto completo中原大學
電子工程研究所
85
The Ion Sensitive Field Effect Transistor (ISFET) is a new integrated device composed of a conventional ion selective electrode (ISE) and a Metal-lnsulator-Semiconductor FET (MISFET). The first ISFET was reported by P.Bergveld in 1970. The device is similar to the conventional MISFET except that the metal gate electrode is removed in order to expose the underlying insulator layer to solution. The gate insulator plays the role of an ion selective electrode. ISFET''s have potential advantages over conventional ion selective electrodes in their rapid response, small size, high input impedance and low output impedance, and are extremely attractive for biomedical applications. In this thesis, the silicon nitride (Si3N4) materials have been used as the pH-sensitive surface in the ISFET and this material is IC-process compatible. Based on the measurement of current-voltage (I-V) curves, the pH sensitivity was determined through the shift of the linear region threshold voltage (△VT) of the ISFET sensor. The experimental studies have been confirmed that the pH sensitivity and linearity of Si3N4 surface for the pH-ISFET is perfect to silicon dioxide (SiO2) materials, but also for Si3N4 materials to exhibit a Nernstian pH response by treatment in hydrofluoric acid (HF).
en-hsu, yang y 楊恩旭. "Study on SnO2 film for ion sensitive field effect transistor". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/57253897079844325963.
Texto completo中原大學
電子工程研究所
86
The ion sensitive field effect transistor (ISFET) is a device composed of a conventional ion selective electrode and a MOSFET device, and applied to the measurement of the ion content in the solution. ISFET*s have potential advantages overconventional ion selective electrodes in their rapid response, small size, and low output impedance. Additionally, the use of IC technology allows low cost fabrication. In this study, the tin-oxide(SnO2) as a new pH sensor layer for ISFET was investigated. It consists of three topics.The first topic is on the characteristics of SnO2 film for ISFET. The characteristics of ISFET including sensitivity (55~59 mV/pH for SnO2), long term drift( about 1~2 mV/hr), hysteresis( about 8 mV), response time (< 0.5 sec) were reported by the experiments. For improving the simulation method of ISFET, we will also calculate the series resistances between drain and source. The second topic is on the characteristics of ISFET. The temperature effect was measured (0℃~70℃). Furthermore the zero temperature coefficient adjustment and the temperature coefficient compensation were discussed.The third topic is on the measurement of pHpzc. The extraction of the point of zero charge(pHpzc) was discussed in this thesis. The value of pHpzc is 5.65 in the flat band condition and 6 in the linear region. It is useful for the simulation of the surface potential.
Su, Y. Devin y 蘇韻文. "Calcium Ions Detection Using InN Ion Sensitive Field Effect Transistor". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/11533972335988933240.
Texto completo國立清華大學
電子工程研究所
98
Ultrathin (~10 nm) InN ion sensitive field effect transistors (ISFETs) modified with 3-aminopropyltrimethoxysilane (APTMS) by molecular vapor deposition (MVD). It is used to selectively detect calcium ions. The ultrathin InN ISFETs have high sensitivity and short response time for anion detection, showing a great potential for chemical and biological sensing applications. The change of water contact angle on InN surface was observed from 74o, indicating the O2 plasma cleaning, to 61o after 1 hour vapor deposition. APTMS with –NH2 terminal functional groups react to the cross-linker, glutaraldehyde, is used to immobilize O-phospho-l-tyrosine (p-Tyr) with phosphate end. After immersed in 1 mM p-Tyr solution for 12 hours, the functionalized InN ISFET is used to complex with calcium ion. A source-drain current increase is observed when calcium ion introduced to the gate region of ISFETs. The current increase is attributed to the binding of positively charged calcium ion. The sensitivity is about 1.11 %/decade, and detection limit is 10-6 M. When InN ISFET is immersed to sodium chloride, potassium chloride, magnesium chloride solution individually, we can calculate that the sensitivity on calcium ion is 6.53, 3.2, 27.9 times than sodium, potassium, and magnesium ions.
Chien-AnChi y 紀建安. "Study on Hydrogen-terminated Diamond Ion-Sensitive Field Effect Transistors". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/64684011940268459813.
Texto completo國立成功大學
微電子工程研究所
104
Ion-sensitive field-effect transistors (ISFET) are fabricated using intrinsic hydrogen-terminated high temperature high pressure single crystalline diamond (HPHT-SCD) films. The properties of ion-sensitive field-effect transistors (ISFET) are realized by a surface conductive channel on hydrogen-terminated diamond. The gating is realized by immersing the diamond surface into phosphate buffered s solution which is contacted by a platinum electrode. The surface of hydrogen terminated diamond without any additional oxide layer acts as a gate insulation. The response of gate potential to pH is about −45.18 mV/pH. The results are discussed in terms of transfer doping mechanism, Nernst equation, and electrochemical properties of diamond surfaces. They are also compared with ISFETs which employ ion-sensitive gate oxides.
Lu, Yen-Sheng y 呂衍昇. "Liquid-Phase Sensors Using InN Ion Sensitive Field Effect Transistor Structure". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/74558473038760431296.
Texto completo國立清華大學
電子工程研究所
98
Ion selective field effect transistor (ISFETs) based on single crystal indium nitride (InN) film have been demonstrated for detecting pH values, anions and polarity in liquids. Three kinds of InN ISFETs containing 10-nm-thick, 1-um-thick and 1.2 um, magnesium (Mg) doped InN have been investigated by electrolyte-gate-biased current-voltage (IDS-VGS) measurements. IDS-VGS characteristics reveal that the a-InN:Mg ISFETs have a large (~52%) current variation ratio at a gate bias of 0.3 V with respect to the unbiased one, which is higher than that from the undoped InN ISFETs (~18% and <0.1% for 10-nm and 1-�慆-thick –c-InN epilayers, respectively). The ultrathin InN and a-InN:Mg ISFETs can also function as pH sensor with a high sensitivity (58.25 mV/pH), a high resolution (0.05 pH), and a short response time(<10 s). For anion sensing applications, the positively charged donors on InN surfaces selectively adsorbed anions and built Helmholtz voltages near the InN/solution interface. The InN ISFETs reveal remarkable selectivity, response time, signal stability, and repeatability for chloride ions. Chemical response to polar liquids including methanol, IPA and acetone, etc, shows a linear relationship with the ratio of dipole moment to dielectric constant of the liquid.
Lin, Cheng-Yi y 林政毅. "Functionalized InN Ion Sensitive Field Effect Transistor for DNA Hybridization Detection". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/95330037766217168668.
Texto completo國立清華大學
電子工程研究所
98
Ultrathin (~10 nm) InN ion sensitive field effect transistors (ISFETs) with gate region modified with 3-mercaptopropyltrimethoxysilane (MPTMS) by molecular vapor deposition (MVD) are used to detect hybridization of deoxyribonucleic acid (DNA). The ultrathin InN ISFETs have a high sensitivity and short response time for anion detection, showing a great potential for chemical and biological sensing applications. Vapor-phase silanization of MPTMS using MVD substantially shortens the response time for surface modification compared to the conventional self-assembled monolayer (SAM) techniques. The change of contact angle of water on InN surface was observed from 0o, indicating the O2 plasma cleaning, to 68o after 1.5 h vapor deposition. MPTMS with -SH terminal functional groups was used to immobilize probe DNA with acrylic phosphoramidite modification at 5'-end. After immersed in 10 uM DNA probes solution for 12 h, the functionalized InN ISFET was used to perform the hybridization with complementary single stranded (ss) DNA 5'-ATTGTTATTAGG-3'. A drain-source current decrease (~6 uA) was observed when a complementary DNA was introduced to the gate region of ISFETs. The current decrease is attributed to the attachment of negatively charged DNA. For a 12-mer oligonucleotide probe, the detection of 1 nM target DNA was accomplished, while the noncomplementary DNA with one base mismatch did not show any obvious current variation.
Yin, Li-Te y 殷立德. "Study of Biosensors Based on an Ion Sensitive Field Effect Transistor". Thesis, 2001. http://ndltd.ncl.edu.tw/handle/97040027905372166514.
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