Bibliografías temáticas / Ion bombardment

Índice

  1. Artículos de revistas
  2. Tesis
  3. Libros
  4. Capítulos de libros
  5. Actas de conferencias
  6. Informes

Literatura académica sobre el tema "Ion bombardment"

Autor: Grafiati
Publicado: 4 de junio de 2021
Última modificación: 29 de julio de 2024

Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros

Elija tipo de fuente:

Consulte las listas temáticas de artículos, libros, tesis, actas de conferencias y otras fuentes académicas sobre el tema "Ion bombardment".

Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.

También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.

Artículos de revistas sobre el tema "Ion bombardment"

1

Lu, Rui, Guangliang Hu, Wanli Zhao, Tongyu Liu, Jiangqi Fan, Chunrui Ma, Lu Lu, Linyue Liu y Ming Liu. "Effects of He-ion bombardment on the ferroelectric and dielectric properties of BaHf0.17Ti0.83O3 films". Applied Physics Letters 121, n.º 7 (15 de agosto de 2022): 072901. http://dx.doi.org/10.1063/5.0107438.

Texto completo
Resumen
Focused helium ion bombardment provides an effective means to modify the properties of ferroelectric materials. This work systematically investigates the effect of helium ion bombardment on the structural, ferroelectric, and dielectric properties of relaxor BaHf0.17Ti0.83O3 thin films at different bombardment doses in the range of 1 × 1012 to 7 × 1015 ions/cm2. The films show more defects and slightly expanded out-of-plane lattice parameters with an increase in dose. Despite helium ion bombardment introducing more defects and structural disorder in the system, the bombardment-induced dipole polarization leads to enhanced ferroelectricity. Our findings highlight energetic helium ion bombardment as an effective way to enhance the ferroelectricity of relaxor materials.
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

Choi, Seung Kyu, Jae Min Jang y Woo Gwang Jung. "Influence of Ion Bombardment of Sapphire on Electrical Property of GaN Layer". Solid State Phenomena 124-126 (junio de 2007): 615–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.615.

Texto completo
Resumen
Ion beam bombardment of proton, He+, Ar+, Xe+ ions were made on single crystal substrate by cyclotron. The GaN epi-layer material was grown by MOCVD on ion beam bombarded substrate. After deposition of GaN epi-layer heat treatment was made in flow of N2. The RMS roughness of the substrate was increased by ion bombardment. The GaN crystal quality for substrates of ion bombardment was better than that for bare substrates. Raman spectrum analysis indicated the induced stress in the GaN epi-layer during the heat treatment. The electrical property of GaN was improved after heat treatment. It is estimated that ion bombardment of proton with current of 1μA is the optimum condition in our experimental condition.
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Wang, Airu, Osamu Ohashi y N. Yamaguchi. "Effect of Argon Ion Bombardment on Diffusion Bonded Joint of Various Metals". Materials Science Forum 449-452 (marzo de 2004): 901–4. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.901.

Texto completo
Resumen
Specimens of aluminum (Al), austenitic stainless steel (SUS304L), pure iron (Fe) and Oxygen-free high conductivity copper (Cu) were treated by argon ion bombardment, and then were bonded by diffusion bonding method. The effects of argon ion bombardment on diffusion-bonded joints of four kinds of metallic materials were compared from the tensile strength at real bonded area and the fractographs. The results showed that bonding temperature was lowered by argon ion bombardment treatment for four kinds of materials. The effect of argon ion bombardment on diffusion-bonded joint depended strongly on the chemistry of the surface to be bonded, and increased in Al, SUS304L, Fe, and Cu in turn.
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Gholami, Nasim, Babak Jaleh, Reza Golbedaghi, Majid Mojtahedzadeh Larijani, Pikul Wanichapichart, Mahmoud Nasrollahzadeh y Rajender S. Varma. "Modification of Chitosan Membranes via Methane Ion Beam". Molecules 25, n.º 10 (13 de mayo de 2020): 2292. http://dx.doi.org/10.3390/molecules25102292.

Texto completo
Resumen
Chitosan has been used for biomedical applications in recent years, primarily because of its biocompatibility. A chitosan membrane with a 30 μm thickness was prepared and investigated for its surface modification using methane ions. Methane ions were implanted into the chitosan membrane using a Kaufman ion source; bombardment was accomplished using three accelerating voltages of ion beams—30, 55, and 80 kV. The influence of the ion bombardment on morphology, crystallinity, and hydrophilicity was investigated. Attenuated total reflectance Fourier-transform infrared (ATR-FTIR) spectroscopy analysis showed that a triplet bond appeared after the implantation of methane ions (acceleration voltage: 80 kV), culminating in the creation of a more amorphous membrane structure. The analyses of atomic force microscopy (AFM) images showed that, with the increase in bombardment energy, the roughness of the surface changed. These results revealed that ion bombardment improved the hydrophilicity of the membranes and the water fluxes of chitosan membranes altered after methane ion bombardment.
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Yamashita, Mutsuo. "Metal ion production by ion bombardment". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14, n.º 5 (septiembre de 1996): 2795–801. http://dx.doi.org/10.1116/1.580202.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

Hobday, Steven, Roger Smith, Ursula Gibson y Asta Richter. "Ion bombardment of C60films". Radiation Effects and Defects in Solids 142, n.º 1-4 (junio de 1997): 301–18. http://dx.doi.org/10.1080/10420159708211615.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Wehner, G. K. "SPUTTERING BY ION BOMBARDMENT". Annals of the New York Academy of Sciences 101, n.º 3 (22 de diciembre de 2006): 803–4. http://dx.doi.org/10.1111/j.1749-6632.1963.tb54935.x.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Beardmore, Keith y Roger Smith. "Ion bombardment of polyethylene". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 102, n.º 1-4 (agosto de 1995): 223–27. http://dx.doi.org/10.1016/0168-583x(95)80145-c.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Howe, L. M., D. P. McCooeye, M. H. Rainville, J. D. Bonnett y D. Phillips. "Ion bombardment of Zr3Fe". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 59-60 (julio de 1991): 884–88. http://dx.doi.org/10.1016/0168-583x(91)95725-s.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Kim, Sang-Pil, Huck Beng Chew, Eric Chason, Vivek B. Shenoy y Kyung-Suk Kim. "Nanoscale mechanisms of surface stress and morphology evolution in FCC metals under noble-gas ion bombardments". Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 468, n.º 2145 (23 de mayo de 2012): 2550–73. http://dx.doi.org/10.1098/rspa.2012.0042.

Texto completo
Resumen
Here, we uncover three new nanoplasticity mechanisms, operating in highly stressed interstitial-rich regions in face-centred-cubic (FCC) metals, which are particularly important in understanding evolution of surface stress and morphology of a FCC metal under low-energy noble-gas ion bombardments. The first mechanism is the configurational motion of self-interstitials in subsonic scattering during ion bombardments. We have derived a stability criterion of self-interstitial scattering during ion embedding, which consistently predicts the possibility of vacancy- and interstitial-rich double-layer formation for various ion bombardments. The second mechanism is the growth by gliding of prismatic dislocation loops (PDLs) in a highly stressed interstitial-rich zone. This mechanism allows certain prismatic dislocations with their Burgers vectors parallel to the surface to grow in subway-glide mode (SGM) during ion bombardment. The SGM growth creates a large population of nanometre-sized prismatic dislocations beneath the surface. The third mechanism is the Burgers vector switching of a PDL that leads to unstable eruption of adatom islands during certain ion bombardments of FCC metals. We have also derived the driving force and kinetics for the growth by gliding of prismatic dislocations in an interstitial-rich environment as well as the criterion for Burgers vector switching, which consistently clarifies previously unexplainable experimental observations.
Los estilos APA, Harvard, Vancouver, ISO, etc.
Más fuentes

Tesis sobre el tema "Ion bombardment"

1

McLaren, M. G. "Ion bombardment induced deposition of tungsten". Thesis, University of Salford, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308526.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

Samartsev, Andrey V. "Sputtering of Indium under polyatomic ion bombardment". [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=976510278.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Whitlow, Harry James. "Ion-materials interactions and their application". Thesis, University of Bath, 1998. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.285272.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Kucheyev, Sergei Olegovich. "Ion-beam processes in group-III nitrides". View thesis entry in Australian Digital Theses Program, 2002. http://thesis.anu.edu.au/public/adt-ANU20030211.170915/index.html.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Locklear, Jay Edward. "Secondary ion emission under keV carbon cluster bombardment". Diss., Texas A&M University, 2006. http://hdl.handle.net/1969.1/4273.

Texto completo
Resumen
Secondary ion mass spectrometry (SIMS) is a surface analysis technique capable of providing isotopic and molecular information. SIMS uses keV projectiles to impinge upon a sample resulting in secondary ion emission from nanometric dimensions. It is well documented that secondary ion emission is enhanced using cluster projectiles compared to atomic projectiles. Previous studies of enhanced secondary ion yields with cluster projectiles have led to the present study dealing with the scope of C60 as a projectile for SIMS. The secondary ion yields (i.e., the number of secondary ions detected per projectile impact) from impacts of 10-26 keV C24H12+, C60+, gramicidin S+ and C60F40+ projectiles were examined to compare the effectiveness of the projectiles. The [M-H]- secondary ion yields from several organic samples varied inversely with the molecular weight. Multiple ion emission decreases monotonically as a function of the number of secondary ions emitted per impact and varies with impact energy such that higher energies produce more multiple ion emission. The emission of CN- from biological samples as a function of carbon-based projectile characteristics was examined to explore the possibility of using CN- as a molecular identifier. CN- emission was found to be the product of both direct and recombination/rearrangement emission. Re-emitted projectile atoms in the form F- were found under C60F40+ bombardment. Two forms of re-emitted F- were found: One form in which F atoms retained a portion of the initial kinetic energy, and a second in which the F atoms deposited most of the initial kinetic energy into the surface before being ejected. The [M-H]- secondary ion yield of gramicidin S was increased ~ 15 times by embedding the analyte in a matrix of sinapic acid. These results show the optimum carbon based projectile for a given sample is dependent upon the signal to be monitored from the surface. The results also show CN- has potential as a molecular identifier. Additionally, the detection of re-emitted F- confirms prior predictions of re-emitted projectile atoms.
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

Zeroual, Boudjemaa. "Ion bombardment induced damage and annealing in Si". Thesis, University of Salford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.258251.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Yin, Jian. "Mechanism studies of fast atom bombardment mass spectrometry". Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/25987.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Alzaim, Safa. "Studies of nanostructure fabrication and morphology development during ion bombardment as a function of bombardment angle". Thesis, Boston University, 2008. https://hdl.handle.net/2144/27575.

Texto completo
Resumen
Thesis (B.A.)--Boston University. University Professors Program Senior theses.
PLEASE NOTE: Boston University Libraries did not receive an Authorization To Manage form for this thesis. It is therefore not openly accessible, though it may be available by request. If you are the author or principal advisor of this work and would like to request open access for it, please contact us at open-help@bu.edu. Thank you.
In order to investigate the behavior of nanostructures during the widely-used process of ion bombardment, the mechanisms of ion bombardment on nanostructures were studied. Nanostructures were fabricated into silicon wafers. The fabrication process involved writing with scanning electron microscopy (SEM) a pattern in poly(methyl methacrylate) (PMMA) polymer resist layered over the silicon, removing the written PMMA in development with methyl isobutyl ketone (MIBK) and isopropanol, layering the wafer with chromium in thermal evaporation, removing the PMMA and its chromium covering with acetone, etching the chromium of the pattern with reactive ion etching, and finally removing the chromium with an etching reagent. The final structures were ion bombarded under 3*10^-3 torr for three hours at 1000 V and 40mA, with Argon; the bombarding was performed at degree angles of 60 and normal incidence. A sample without the fabrication of structures is bombarded at normal incidence as well. One sample with fabricated structures is studied without bombardment as an experimental control. The results were erosion of the bombarded structures, cones and dots.
2031-01-02
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Zabeida, Oleg Vasilyevich. "Study of ion bombardment characteristics in high frequency plasmas". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp03/NQ53549.pdf.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

SAXE, STEVEN GARY. "ION-INDUCED PROCESSES IN OPTICAL COATINGS (BOMBARDMENT, THIN FILMS)". Diss., The University of Arizona, 1985. http://hdl.handle.net/10150/188076.

Texto completo
Resumen
Nearly all the deficiencies of conventional vacuum evaporated coatings trace to a single physical property of condensed films: low packing density. One way to increase packing density is to bombard the growing film with ions during deposition, called ion-assisted deposition (IAD). The beginning chapters of this dissertation analyze IAD as a perturbation of the conventional vacuum evaporation process. The experimental chapters begin with an examination of the effect on moisture penetration behavior of oxygen-ion bombarding completed optical filters. Moisture adsorption and desorption is retarded after bombardment in filters composed of titania and silica, but not in those of zirconia and silica. Bombardment evidently induces a crystalline-to-amorphous transition in titania, causing the surface to swell and occluding the pores. The transition in zirconia is the reverse, and no impediment to moisture appears. Argon-ion-assisted magnesium fluoride (MgF₂) can show ultraviolet (UV) absorption. The primary mechanism is probably the formation of F-centers (single fluorine-ion vacancies), although an unsaturated oxygen bond may also be responsible. Absorption can be removed by baking and often by irradiation with UV. After baking, fluorine is lost and replaced by oxygen. Absorption-free MgF₂ films can be deposited by minimizing the substrate temperature and bombardment flux. Ion-assisted films contain up to 2% argon and up to 170 parts-per-million of tungsten from the ion gun filaments. They show a slightly higher refractive index, are much less porous, and are much more resistant to damage by abrasion and exposure to fluorine gas. Ion-assisted aluminum oxide (alumina, Al₂O₃) films show a small increase in UV absorption after argon-ion bombardment; however, a mixture of argon and oxygen ions avoids the problem. Excess oxygen is often incorporated into alumina films, and depresses both the mass density and the refractive index. IAD increases refractive index and decreases porosity. Ion-assisted alumina films are somewhat more stable in humid environments. Ion-assisted deposition has been shown by this study to cause substantial improvements in many of the physical and some of the optical and chemical properties of evaporated magnesium fluoride and aluminum oxide films.
Los estilos APA, Harvard, Vancouver, ISO, etc.
Más fuentes

Libros sobre el tema "Ion bombardment"

1

Manenschijn, Albert. Ion bombardment and ion-assisted etching in rf discharges. Delft, Netherlands: Technische Universiteit Delft, 1991.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

F, Ziegler J., ed. Handbook of ion implantation technology. Amsterdam: North-Holland, 1992.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Anuntalabhochai, S. Ion beam bioengineering research. New York: Nova Science Publisher's, 2011.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Forrester, A. Theodore. Large ion beams: Fundamentals of generation and propagation. New York: Wiley, 1988.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Zeroual, Boudjemaa. Ion bombardment induced damage and annealing in Si. Salford: University of Salford, 1990.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

United States. National Aeronautics and Space Administration., ed. One dimensional heavy ion beam transport: Energy independent model. [Washington, D.C: National Aeronautics and Space Administration], 1990.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Prewett, P. D. Focused ion beams from liquid metal ion sources. Taunton, Somerset, England: Research Studies Press, 1991.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Orloff, Jon. High resolution focused ion beams: FIB and its applications ; the physics of liquid metal ion sources and ion optics and their application to focused ion beam technology. New York, NY: Kluwer Academic/Plenum Publishers, 2003.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Orloff, Jon. High Resolution Focused Ion Beams: FIB and its Applications: The Physics of Liquid Metal Ion Sources and Ion Optics and Their Application to Focused Ion Beam Technology. Boston, MA: Springer US, 2003.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

1934-, Swanson Lynwood y Utlaut Mark William 1949-, eds. High resolution focused ion beams: FIB and its applications : the physics of liquid metal ion sources and ion optics and their application to focused ion beam technology. New York: Kluwer Academic/Plenum Publishers, 2003.

Buscar texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
Más fuentes

Capítulos de libros sobre el tema "Ion bombardment"

1

Yates, John T. "Alternate Ion Bombardment Sources". En Experimental Innovations in Surface Science, 310–13. New York, NY: Springer New York, 1998. http://dx.doi.org/10.1007/978-1-4612-2304-7_95.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

Strazzulla, G. "Ion Bombardment: Techniques, Materials and Applications". En Experiments on Cosmic Dust Analogues, 103–13. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3033-9_8.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Roth, J. "Physical Sputtering of Solids at Ion Bombardment". En Physics of Plasma-Wall Interactions in Controlled Fusion, 351–88. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4757-0067-1_8.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Smirnov, A. B. y R. K. Savkina. "Nanostructuring Surfaces of HgCdTe by Ion Bombardment". En Springer Proceedings in Physics, 405–16. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56422-7_30.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Cooks, R. G., B. H. Hsu, W. B. Emary y W. K. Fife. "Surface Organic Reactions Induced by Ion Bombardment". En Springer Proceedings in Physics, 28–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82718-1_6.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

Rauschenbach, Bernd. "Low-Energy Ion Beam Bombardment-Induced Nanostructures". En Low-Energy Ion Irradiation of Materials, 305–405. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-97277-6_8.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Rauschenbach, Bernd. "Evolution of Topography Under Low-Energy Ion Bombardment". En Low-Energy Ion Irradiation of Materials, 177–263. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-97277-6_6.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Miglierini, Marcel, Adriana Lančok y Márius Pavlovič. "Ion bombardment of Fe-based amorphous metallic alloys". En ISIAME 2008, 45–52. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-01370-6_6.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Klaumünzer, S. L. "Plastic Flow of Amorphous Materials During Ion Bombardment". En Multiscale Phenomena in Plasticity: From Experiments to Phenomenology, Modelling and Materials Engineering, 441–50. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4048-5_34.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Kuznetsov, G. D. "Crystallization from the Gas Phase under Ion Bombardment". En Growth of Crystals, 23–40. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4615-7125-4_3.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.

Actas de conferencias sobre el tema "Ion bombardment"

1

Pozdeyev, E., D. Kayran, V. N. Litvinenko, Donald G. Crabb, Yelena Prok, Matt Poelker, Simonetta Liuti, Donal B. Day y Xiaochao Zheng. "Ion bombardment in RF guns". En SPIN PHYSICS: 18th International Spin Physics Symposium. AIP, 2009. http://dx.doi.org/10.1063/1.3215603.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

Walkup, R. E., Ph Avouris y A. P. Ghosh. "Excited-Atom Production by Electron Bombardment of Alkali-Halides". En Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/msba.1987.mc4.

Texto completo
Resumen
Bombardment of solids by energetic beams of electrons, photons, or ions is generally accompanied by the ejection of particles from the surface. The ejected particles include ground-state neutral atoms and molecules, electronically excited atoms, and ionic species. We have performed a variety of experiments on the bombardment of alkali-halides by electron and ion beams. These experiments suggest a new mechanism for the formation of excited atoms and positive ions due to electron bombardment of alkali-halides. Additional measurements provide an interesting contrast between excited atom production by the bombardment of alkali-halides with ion vs. electron beams.
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Lehan, J. P., J. D. Targove, B. G. Bovard, M. J. Messerly y C. C. Weng. "Intermittent ion bombardment of optical thin films". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.mq4.

Texto completo
Resumen
The practical problems of using ion-assisted deposition with substrate rotation are discussed, including the role of ion energy vs total ion flux. We compare MgF2, ZrO2, and SiO2 films made conventionally and with intermittent ion bombardment in terms of optical performance and stoichiometry. Vacuum-to-air shifts of the peak wavelength are significantly reduced in narrowband filters of ZrO2/SiO2. Also discussed is the relation between which layers are bombarded and peak wavelength shift; i.e., does the entire filter need to be bombarded or just a few critical layers? We also investigated stress reduction in MgF2 films.
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Wakamatsu, Yoshinobu, Hideaki Yamada, Satoshi Ninomiya, Brian N. Jones, Toshio Seki, Takaaki Aoki, Roger Webb et al. "Biomolecular Emission by Swift Heavy Ion Bombardment". En ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010. AIP, 2011. http://dx.doi.org/10.1063/1.3548357.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Sanabia, Jason E. "Highly Charged Ion Bombardment of Silicon Surfaces". En APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: 17TH International Conference on the Application of Accelerators in Research and Industry. AIP, 2003. http://dx.doi.org/10.1063/1.1619781.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

MATOSSIAN, J. y J. BEATTIE. "Plasma properties in electron-bombardment ion thrusters". En 19th International Electric Propulsion Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1987. http://dx.doi.org/10.2514/6.1987-1076.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Menezes, P. V., J. Martin, M. Schafer y K. M. Weitzel. "Bombardment induced ion transport through an ion-conducting Ca30 glass". En 2011 IEEE 14th International Symposium on Electrets ISE 14. IEEE, 2011. http://dx.doi.org/10.1109/ise.2011.6084970.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

McNally, J. J., G. A. Al-Jumaily y J. R. McNeil. "Ion-beam-assisted deposition of metal oxide optical thin films". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fl5.

Texto completo
Resumen
The properties of dielectric (Al2O3, Ta2O5, HfO2, and TiO2) films deposited using ion beam assisted deposition (IAD) have been examined. Previously1 we have described the importance of oxygen-ion energy and flux in applying IAD to dielectric materials and examined some of the properties of TiO2 and SiO2 films. In this work we present results illustrating ion bombardment effects on the thin film properties of Al2O3, Ta2O5, and HfO2; in particular, film stoichiometry is strongly dependent on the ion beam flux and energy, a reduction in optical scatter is observed, and higher values of refractive index are obtained for films deposited with simultaneous O 2 + bombardment. Also, in certain cases, Raman spectroscopy indicates a crystalline phase change is induced by the O2 bombardment of samples during film deposition.
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

M. S., Khristodorov, Strunin V. I., Baranova L. V. y Chirikov N. A. "REDUCING THE ROUGHNESS OF THIN ALUMINUM FILMS BY ION BOMBARDMENT". En Mechanical Science and Technology Update. Omsk State Technical University, 2022. http://dx.doi.org/10.25206/978-5-8149-3453-6-2022-136-141.

Texto completo
Resumen
The results of an experiment on reducing the roughness of thin films of aluminum (Al) obtained by magnetron sputtering are presented. The paper presents a method for reducing the roughness by bombarding aluminum films with a directed beam of argon ions. Surface roughness was measured by atomic force microscopy (AFM). It is shown that ion bombardment leads to a decrease in the surface roughness of Al films.
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Varnier, F., C. Boulesteix, J. D. Targove, L. J. Lingg, B. G. Bovard y H. Angus Macleod. "Influence of ion-assisted deposition on structure and surface roughness of aluminum oxide". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/oam.1987.ths5.

Texto completo
Resumen
Two techniques of transmission microscopy were used to examine films of aluminum oxide made by ion-assisted deposition with a Kaufman hot cathode ion gun. The films were bombarded during their growth by oxygen ions of 500-eV energy at an ion current density of 100 μA/cm2. Substrate temperatures were nominally 100°C. The films were grown in the same pumpdown cycle with and without bombardment. The surfaces of shadowed replicas of the films were examined by a technique involving the microdensitometry of micrographs,1 and statistical parameters were derived. With ion bombardment, there appeared to be a reduction in the incidence of large nodular features but a slight increase in very fine roughness. Direct micrographs were obtained by first depositing films over carbon and then stripping them; they showed that the films were completely amorphous.
Los estilos APA, Harvard, Vancouver, ISO, etc.

Informes sobre el tema "Ion bombardment"

1

Pozdeyev, E., D. Kayran y V. Litvinenko. Cathode Ion Bombardment in RF Photoguns. Office of Scientific and Technical Information (OSTI), septiembre de 2008. http://dx.doi.org/10.2172/939989.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

Pozdeyev E., D. Kayran y V. Litvinenko. Cathode Ion Bombardment in RF Photoguns. Office of Scientific and Technical Information (OSTI), septiembre de 2008. http://dx.doi.org/10.2172/1061912.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
3

Eklund, Elliott A., R. Bruinsma, J. Rudnick y R. S. Williams. Submicron-Scale Surface Roughening Induced by Ion Bombardment. Fort Belvoir, VA: Defense Technical Information Center, febrero de 1991. http://dx.doi.org/10.21236/ada232151.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Kiv, A. E., T. I. Maximova y V. N. Soloviov. MD Simulation of the Ion-Stimulated Relaxation in Silicon Surface Layers. [б. в.], junio de 2000. http://dx.doi.org/10.31812/0564/1278.

Texto completo
Resumen
Thus it was established that ion bombardment of silicon surface in the energy region of the threshold of elastic displacement of atoms might allow to improve structural characteristics of surface lavers and to decrease the relaxation time. Energy dependencies of radiation induced processes show a possibility to improve the real staicture of Silicon surface and to accelerate the long-term surface relaxation in microelectronic technology.
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Ila, Daryush, E. K. Williams, R. L. Zimmerman, P. R. Ashley y D. B. Poker. Fabrication of Optical Channel Waveguides in the GaAs/AlGaAs System by MeV Ion Beam Bombardment. Fort Belvoir, VA: Defense Technical Information Center, febrero de 2000. http://dx.doi.org/10.21236/ada379168.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
6

Topper, James L., Binyamin Rubin, Cody C. Farnell y Azer P. Yalin. Preliminary Results of Low Energy Sputter Yields of Boron Nitride due to Xenon Ion Bombardment (Preprint). Fort Belvoir, VA: Defense Technical Information Center, julio de 2008. http://dx.doi.org/10.21236/ada484455.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Nikzad, S., W. F. Calaway, M. J. Pellin, C. E. Young, D. M. Gruen y T. A. Tombrello. Formation mechanism and yield of molecules ejected from ZnS, CdS, and FeS{sub 2} during ion bombardment. Office of Scientific and Technical Information (OSTI), marzo de 1994. http://dx.doi.org/10.2172/10134182.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Manley, Michael. Creation of graphite surface defects via ion bombardment: The origin of active portals and their role in encapsulation of metal nanoparticles. Office of Scientific and Technical Information (OSTI), mayo de 2020. http://dx.doi.org/10.2172/1711426.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Burnett, J. W., M. J. Pellin, J. E. Whitten, D. M. Gruen y J. T. Jr Yates. Ion dose dependence of the sputtering yield: Ar{sup +}, Ne{sup +}, and Xe{sup +} bombardment of Ru(0001) and Al(111). Office of Scientific and Technical Information (OSTI), abril de 1994. http://dx.doi.org/10.2172/10141730.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Le Pimpec, F., R. E. Kirby, F. K. King y M. Pivi. The Effect of Gas Ion Bombardment on the Secondary Electron Yield of TiN, TiCN and TiZrV Coatings For Suppressing Collective Electron Effects in Storage Rings. Office of Scientific and Technical Information (OSTI), enero de 2006. http://dx.doi.org/10.2172/875817.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
También puede estar interesado en las bibliografías ampliadas sobre el tema "Ion bombardment" para tipos de fuentes particulares:
Artículos de revistas Tesis Libros
Ofrecemos descuentos en todos los planes premium para autores cuyas obras están incluidas en selecciones literarias temáticas. ¡Contáctenos para obtener un código promocional único!

Pasar a la bibliografía