Artículos de revistas sobre el tema "Instabilté de Vth"
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Senzaki, Junji, Atsushi Shimozato, Kazutoshi Kojima, Shinsuke Harada, Keiko Ariyoshi, Takahito Kojima, Yasunori Tanaka y Hajime Okumura. "Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces". Materials Science Forum 778-780 (febrero de 2014): 521–24. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.521.
Texto completoTadjer, Marko J., Karl D. Hobart, Eugene A. Imhoff y Fritz J. Kub. "Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices". Materials Science Forum 600-603 (septiembre de 2008): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1147.
Texto completoSometani, Mitsuru, Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda y Hajime Okumura. "Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method". Materials Science Forum 821-823 (junio de 2015): 685–88. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.685.
Texto completoNa, Jeong-Hyeon, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee et al. "Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors". Nanomaterials 14, n.º 5 (4 de marzo de 2024): 466. http://dx.doi.org/10.3390/nano14050466.
Texto completoKutsuki, Katsuhiro, Sachiko Kawaji, Yukihiko Watanabe, Masatoshi Tsujimura, Toru Onishi, Hirokazu Fujiwara, Kensaku Yamamoto y Takashi Kanemura. "Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs". Materials Science Forum 858 (mayo de 2016): 607–10. http://dx.doi.org/10.4028/www.scientific.net/msf.858.607.
Texto completoSenzaki, Junji, Atsushi Shimozato, Kozutoshi Kajima, Keiko Aryoshi, Takahito Kojima, Shinsuke Harada, Yasunori Tanaka, Hiroaki Himi y Hajime Okumura. "Electrical Properties of MOS Structures on 4H-SiC (11-20) Face". Materials Science Forum 740-742 (enero de 2013): 621–24. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.621.
Texto completoKim, Sang Sub, Pyung Ho Choi, Do Hyun Baek, Jae Hyeong Lee y Byoung Deog Choi. "Abnormal Threshold Voltage Shifts in P-Channel Low-Temperature Polycrystalline Silicon Thin Film Transistors Under Negative Bias Temperature Stress". Journal of Nanoscience and Nanotechnology 15, n.º 10 (1 de octubre de 2015): 7555–58. http://dx.doi.org/10.1166/jnn.2015.11167.
Texto completoOkamoto, Mitsuo, Mitsuru Sometani, Shinsuke Harada, Hiroshi Yano y Hajime Okumura. "Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET". Materials Science Forum 897 (mayo de 2017): 549–52. http://dx.doi.org/10.4028/www.scientific.net/msf.897.549.
Texto completoDeb, Arkadeep, Jose Ortiz-Gonzalez, Mohamed Taha, Saeed Jahdi, Phillip Mawby y Olayiwola Alatise. "Impact of Turn-Off Gate Voltage and Temperature on Threshold Voltage Instability in Pulsed Gate Voltage Stresses of SiC MOSFETs". Materials Science Forum 1091 (5 de junio de 2023): 61–66. http://dx.doi.org/10.4028/p-lidhbt.
Texto completoRescher, Gerald, Gregor Pobegen y Thomas Aichinger. "Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs". Materials Science Forum 821-823 (junio de 2015): 709–12. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.709.
Texto completoLi, Shanjie, Peiye Sun, Zhiheng Xing, Nengtao Wu, Wenliang Wang y Guoqiang Li. "Degradation mechanisms of Mg-doped GaN/AlN superlattices HEMTs under electrical stress". Applied Physics Letters 121, n.º 6 (8 de agosto de 2022): 062101. http://dx.doi.org/10.1063/5.0094957.
Texto completoLi, Xiangdong, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan et al. "Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization". Micromachines 14, n.º 5 (12 de mayo de 2023): 1042. http://dx.doi.org/10.3390/mi14051042.
Texto completoWu, Ruizhu, Simon Mendy, Nereus Agbo, Jose Ortiz Gonzalez, Saeed Jahdi y Olayiwola Alatise. "Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions". Energies 14, n.º 20 (19 de octubre de 2021): 6834. http://dx.doi.org/10.3390/en14206834.
Texto completoKoo, Sang-Mo y Tae-Jun Ha. "Improved Photo-Induced Stability in Amorphous Metal-Oxide Based TFTs for Transparent Displays". Journal of Nanoscience and Nanotechnology 15, n.º 10 (1 de octubre de 2015): 7800–7803. http://dx.doi.org/10.1166/jnn.2015.11193.
Texto completoAsllani, Besar, Alberto Castellazzi, Dominique Planson y Hervé Morel. "Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs". Materials Science Forum 963 (julio de 2019): 184–88. http://dx.doi.org/10.4028/www.scientific.net/msf.963.184.
Texto completoGrossl Bade, Tamiris, Hassan Hamad, Adrien Lambert, Hervé Morel y Dominique Planson. "Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs". Electronics 12, n.º 11 (3 de junio de 2023): 2529. http://dx.doi.org/10.3390/electronics12112529.
Texto completoLiu, Han-Wen, Tzu-Cheng Hung y Bo-Xiang Huang. "(Digital Presentation) Instability of α-Si:H TFTs under Simultaneous Ultraviolet Light Illumination and Different Bias Stresses". ECS Meeting Abstracts MA2022-02, n.º 35 (9 de octubre de 2022): 1262. http://dx.doi.org/10.1149/ma2022-02351262mtgabs.
Texto completoRescher, Gerald, Gregor Pobegen y Tibor Grasser. "Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress". Materials Science Forum 858 (mayo de 2016): 481–84. http://dx.doi.org/10.4028/www.scientific.net/msf.858.481.
Texto completoGo, Donghyun, Gilsang Yoon, Jounghun Park, Donghwi Kim, Jiwon Kim, Jungsik Kim y Jeong-Soo Lee. "Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory". Micromachines 14, n.º 11 (28 de octubre de 2023): 2007. http://dx.doi.org/10.3390/mi14112007.
Texto completoElangovan, Surya, Stone Cheng y Edward Yi Chang. "Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications". Energies 13, n.º 10 (21 de mayo de 2020): 2628. http://dx.doi.org/10.3390/en13102628.
Texto completoLEE, YONG K. "CONTROLLING INSTABILITIES OF HYDROGENERATED a-Si:H TFT UNDER BIAS TEMPERATURE STRESSING". Modern Physics Letters B 22, n.º 04 (10 de febrero de 2008): 263–68. http://dx.doi.org/10.1142/s0217984908014730.
Texto completoLee, Sangmin, Pyungho Choi, Minjun Song, Gaeun Lee, Nara Lee, Bohyeon Jeon y Byoungdeog Choi. "Negative Bias Instability of InZnO-Based Thin-Film Transistors Under Illumination Stress". Journal of Nanoscience and Nanotechnology 21, n.º 8 (1 de agosto de 2021): 4277–84. http://dx.doi.org/10.1166/jnn.2021.19392.
Texto completoLee, Seung-Hun, Kihwan Kwon, Kwanoh Kim, Jae Sung Yoon, Doo-Sun Choi, Yeongeun Yoo, Chunjoong Kim, Shinill Kang y Jeong Hwan Kim. "Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications". Materials 12, n.º 1 (3 de enero de 2019): 137. http://dx.doi.org/10.3390/ma12010137.
Texto completoLim, Sang Chul, Seong Hyun Kim, Gi Heon Kim, Jae Bon Koo, Jung Hun Lee, Chan Hoe Ku, Yong Suk Yang, Do Jin Kim y Tae Hyoung Zyung. "Instability of OTFT with Organic Gate Dielectrics". Solid State Phenomena 124-126 (junio de 2007): 407–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.407.
Texto completoDreger, Christian y Jürgen Wolters. "Instabile Geldnachfrage im Euroraum?" Vierteljahrshefte zur Wirtschaftsforschung 76, n.º 4 (octubre de 2007): 85–95. http://dx.doi.org/10.3790/vjh.76.4.85.
Texto completoElangovan, Surya, Edward Yi Chang y Stone Cheng. "Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress". Energies 14, n.º 8 (13 de abril de 2021): 2170. http://dx.doi.org/10.3390/en14082170.
Texto completoGonzalez, Jose Ortiz, Olayiwola Alatise y Philip A. Mawby. "Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs". Materials Science Forum 963 (julio de 2019): 749–52. http://dx.doi.org/10.4028/www.scientific.net/msf.963.749.
Texto completoMurakami, Eiichi, Takahiro Furuichi, Tatsuya Takeshita y Kazuhiro Oda. "Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V". Materials Science Forum 924 (junio de 2018): 711–14. http://dx.doi.org/10.4028/www.scientific.net/msf.924.711.
Texto completoPark, Jee Ho, Sohyung Lee, Hee Sung Lee, Sung Ki Kim, Kwon-Shik Park y Soo-Young Yoon. "Correlation between spin density and Vth instability of IGZO thin-film transistors". Current Applied Physics 18, n.º 11 (noviembre de 2018): 1447–50. http://dx.doi.org/10.1016/j.cap.2018.08.016.
Texto completoWang, Kai Yu, Cai Ping Wan, Wen Hao Lu, Nian Nian Ge y Heng Yu Xu. "Factors Affecting Bias Temperature Instability in 4H-SiC MOS Capacitors". Key Engineering Materials 950 (31 de julio de 2023): 133–38. http://dx.doi.org/10.4028/p-fagd0d.
Texto completoIdris, Muhammad I., Ming Hung Weng, H. K. Chan, A. E. Murphy, Dave A. Smith, R. A. R. Young, Ewan P. Ramsay, David T. Clark, Nick G. Wright y Alton B. Horsfall. "Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors". Materials Science Forum 897 (mayo de 2017): 513–16. http://dx.doi.org/10.4028/www.scientific.net/msf.897.513.
Texto completoDreger, Christian y Jürgen Wolters. "Hat die Finanzkrise zu einer instabilen Geldnachfrage geführt?" Vierteljahrshefte zur Wirtschaftsforschung 79, n.º 4 (octubre de 2010): 135–45. http://dx.doi.org/10.3790/vjh.79.4.135.
Texto completoLi, Jiye, Yuqing Zhang, Hao Peng, Huan Yang, Lei Lu y Shengdong Zhang. "9.2: Mechanism of H2O‐induced Instability of Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs". SID Symposium Digest of Technical Papers 54, S1 (abril de 2023): 94–97. http://dx.doi.org/10.1002/sdtp.16230.
Texto completoRuderman, M. S., E. Verwichte, R. Erdélyi y M. Goossens. "Dissipative instability of the MHD tangential discontinuity in magnetized plasmas with anisotropic viscosity and thermal conductivity". Journal of Plasma Physics 56, n.º 2 (octubre de 1996): 285–306. http://dx.doi.org/10.1017/s0022377800019279.
Texto completoHuang, Sen, Shu Yang, John Roberts y Kevin J. Chen. "Characterization of Vth-instability in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement". physica status solidi (c) 9, n.º 3-4 (29 de febrero de 2012): 923–26. http://dx.doi.org/10.1002/pssc.201100302.
Texto completoCho, Sanghyun, Seohan Kim, Doyeong Kim, Moonsuk Yi, Junseok Byun y Pungkeun Song. "Effects of Yttrium Doping on a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors". Coatings 9, n.º 1 (15 de enero de 2019): 44. http://dx.doi.org/10.3390/coatings9010044.
Texto completoFlorentin, Matthieu, Mihaela Alexandru, Aurore Constant, Bernd Schmidt y Philippe Godignon. "10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters". Materials Science Forum 806 (octubre de 2014): 121–25. http://dx.doi.org/10.4028/www.scientific.net/msf.806.121.
Texto completoBai, Zhi Qiang, Xiao Yan Tang, Chao Han, Yan Jing He, Qing Wen Song, Yi Fan Jia, Yi Men Zhang y Yu Ming Zhang. "The Influence of Temperature Storage on Threshold Voltage Stability for SiC VDMOSFET". Materials Science Forum 954 (mayo de 2019): 144–50. http://dx.doi.org/10.4028/www.scientific.net/msf.954.144.
Texto completoSlobounov, Semyon, Cheng Cao, Niharika Jaiswal y Karl M. Newell. "Neural basis of postural instability identified by VTC and EEG". Experimental Brain Research 199, n.º 1 (5 de agosto de 2009): 1–16. http://dx.doi.org/10.1007/s00221-009-1956-5.
Texto completoFranck Severin Ando, Amalaman. "Milieu Institutionnel, Sexe Et Stabilité Émotionnelle/Névrosisme Chez Des Orphelins Et Enfants Vulnérables Du Fait Du VIH À Abidjan". European Scientific Journal, ESJ 18, n.º 14 (30 de abril de 2022): 116. http://dx.doi.org/10.19044/esj.2022.v18n14p116.
Texto completoNeema, Vaibhav, Kuldeep Raguwanshi, Ambika Prasad Shah y Santosh Kumar Vishvakarma. "Vth Extraction Based Run Time Transistor Width (TWOS) Module for On-Chip Negative Bias Temperature Instability (NBTI) Mitigation". Sensor Letters 17, n.º 5 (1 de mayo de 2019): 385–92. http://dx.doi.org/10.1166/sl.2019.4103.
Texto completoWang, Dapeng, Mamoru Furuta, Shigekazu Tomai y Koki Yano. "Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors". Nanomaterials 10, n.º 9 (9 de septiembre de 2020): 1782. http://dx.doi.org/10.3390/nano10091782.
Texto completoAli, Amjad, Ahmad Naveed, Tahir Rasheed, Tariq Aziz, Muhammad Imran, Ze-Kun Zhang, Muhammad Wajid Ullah et al. "Methods for Predicting Ethylene/Cyclic Olefin Copolymerization Rates Promoted by Single-Site Metallocene: Kinetics Is the Key". Polymers 14, n.º 3 (24 de enero de 2022): 459. http://dx.doi.org/10.3390/polym14030459.
Texto completoNandi, Abhijit, Manisha, Vandana Solanki, Vishvanath Tiwari, Basavaraj Sajjanar, Muthu Sankar, Mohini Saini, Sameer Shrivastava, S. K. Bhure y Srikant Ghosh. "Protective Efficacy of Multiple Epitope-Based Vaccine against Hyalomma anatolicum, Vector of Theileria annulata and Crimean–Congo Hemorrhagic Fever Virus". Vaccines 11, n.º 4 (21 de abril de 2023): 881. http://dx.doi.org/10.3390/vaccines11040881.
Texto completoAktershev, Yuriy, Sergey Vasichev y Vladimir Veremeenko. "Precision Four-Quadrant Current Source Vch-500-12r For Superconducting Solenoids". Siberian Journal of Physics 12, n.º 2 (1 de junio de 2017): 138–41. http://dx.doi.org/10.54362/1818-7919-2017-12-2-138-141.
Texto completoJung, Seyeon, Taehoon Sung, Sein Lee y J. Y. Kwon. "Control of Hydrogen Concentration in Ingazno Thin Film Using Cryopumping System". ECS Meeting Abstracts MA2022-01, n.º 31 (7 de julio de 2022): 1333. http://dx.doi.org/10.1149/ma2022-01311333mtgabs.
Texto completoOrtel, Thomas L., Karen D. Moore, Mirella Ezban y William H. Kane. "Effect of Heterologous Factor V Heavy Chain Sequences on the Secretion of Recombinant Human Factor VIII". Thrombosis and Haemostasis 75, n.º 01 (1996): 036–44. http://dx.doi.org/10.1055/s-0038-1650218.
Texto completoBesnier, Niko. "Les politiques identitaires entre le local et le global : la mobilisation transgenre aux îles Tonga (Pacifique sud)". Ethnologie française Vol. 54, n.º 1 (26 de febrero de 2024): 117–33. http://dx.doi.org/10.3917/ethn.241.0117.
Texto completoLee, Geon Hee, Jang Kwon Lim, Sang Mo Koo y Mietek Bakowski. "Measurement and Analysis of Body Diode Stress of 3.3 kV Sic-Mosfets with Intrinsic Body Diode and Embedded SBD". Materials Science Forum 1091 (5 de junio de 2023): 55–59. http://dx.doi.org/10.4028/p-nnor4r.
Texto completoSingh, N. "Space-time evolution of electron-beam driven electron holes and their effects on the plasma". Nonlinear Processes in Geophysics 10, n.º 1/2 (30 de abril de 2003): 53–63. http://dx.doi.org/10.5194/npg-10-53-2003.
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