Acceder

Bibliografías temáticas / Indium selenid / Artículos de revistas

Siga este enlace para ver otros tipos de publicaciones sobre el tema: Indium selenid.

Artículos de revistas sobre el tema "Indium selenid"

Autor: Grafiati

Publicado: 25 de mayo de 2024

Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros

Elija tipo de fuente:

Consulte los 50 mejores artículos de revistas para su investigación sobre el tema "Indium selenid".

Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.

También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.

Explore artículos de revistas sobre una amplia variedad de disciplinas y organice su bibliografía correctamente.

1

Ivanauskas, Algimantas, Remigijus Ivanauskas y Ingrida Ancutiene. "Effect of In-Incorporation and Annealing on CuxSe Thin Films". Materials 14, n.º 14 (8 de julio de 2021): 3810. http://dx.doi.org/10.3390/ma14143810.

Texto completo

Resumen

A study of indium-incorporated copper selenide thin-film deposition on a glass substrate using the successive ionic adsorption and reaction method (SILAR) and the resulting properties is presented. The films were formed using these steps: selenization in the solution of diseleniumtetrathionate acid, treatment with copper(II/I) ions, incorporation of indium(III), and annealing in an inert nitrogen atmosphere. The elemental and phasal composition, as well as the morphological and optical properties of obtained films were determined. X-ray diffraction data showed a mixture of various compounds: Se, Cu0.87Se, In2Se3, and CuInSe2. The obtained films had a dendritic structure, agglomerated and not well-defined grains, and a film thickness of ~90 μm. The band gap values of copper selenide were 1.28–1.30 eV and increased after indium-incorporation and annealing. The optical properties of the formed films correspond to the optical properties of copper selenide and indium selenide semiconductors.

Los estilos APA, Harvard, Vancouver, ISO, etc.

2

Song, Nahong, Hong Ling, Yusheng Wang, Liying Zhang, Yuye Yang y Yu Jia. "Intriguing electronic properties of germanene/ indium selenide and antimonene/ indium selenide heterostructures". Journal of Solid State Chemistry 269 (enero de 2019): 513–20. http://dx.doi.org/10.1016/j.jssc.2018.10.031.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

3

Kabanov V. F., Mikhailov A. I. y Gavrikov M. V. "Investigation of the features of electronic spectrum of quantum dots in narrow-gap semiconductors". Technical Physics Letters 48, n.º 8 (2022): 47. http://dx.doi.org/10.21883/tpl.2022.08.55061.19220.

Texto completo

Resumen

Samples with quantum dots (QDs) of narrow-gap semiconductors of the A3B5 group (indium antimonide) and the A2B6 group (mercury selenide) have been studied. The absorption spectra of the investigated QDs are analyzed and the correspondence of the maxima in the spectral characteristics to the model representations of the calculated electronic energy spectrum for this materials is assessed. It is concluded that used model representations requires refinement, primarily due to the fact that studied objects are nanocrystals with complex geometry. Keywords: quantum dots, indium antimonide, mercury selenide, electronic energy spectrum.

Los estilos APA, Harvard, Vancouver, ISO, etc.

4

Katerynchuk, V. M. "Photoemission spectra of indium selenide". Semiconductor physics, quantum electronics and optoelectronics 9, n.º 4 (15 de diciembre de 2006): 36–39. http://dx.doi.org/10.15407/spqeo9.04.036.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

5

Massaccesi, Sylvie, Sylvie Sanchez y Jacques Vedel. "Electrodeposition of indium selenide in2se3". Journal of Electroanalytical Chemistry 412, n.º 1-2 (agosto de 1996): 95–101. http://dx.doi.org/10.1016/0022-0728(96)04604-9.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

6

Katee, Narjes Sadeq, Oday Ibraheem Abdullah y Emad Talib Hashim. "Extracting Four Solar Model Electrical Parameters of Mono-Crystalline Silicon (mc-Si) and Thin Film (CIGS) Solar Modules using Different Methods". Journal of Engineering 27, n.º 4 (29 de marzo de 2021): 16–32. http://dx.doi.org/10.31026/j.eng.2021.04.02.

Texto completo

Resumen

Experimental measurements were done for characterizing current-voltage and power-voltage of two types of photovoltaic (PV) solar modules; monocrystalline silicon (mc-Si) and copper indium gallium di-selenide (CIGS). The conversion efficiency depends on many factors, such as irradiation and temperature. The assembling measures as a rule cause contrast in electrical boundaries, even in cells of a similar kind. Additionally, if the misfortunes because of cell associations in a module are considered, it is hard to track down two indistinguishable photovoltaic modules. This way, just the I-V, and P-V bends' trial estimation permit knowing the electrical boundaries of a photovoltaic gadget with accuracy. This measure gives extremely significant data to the plan, establishment, and upkeep of PV frameworks. Three methods, simplified explicit, slope, and iterative, are used to compute two solar models' parameters using MATLAB code. The percentage maximum power errors at (600 and 1000) W/m2 for both current-voltage and power-voltage values with the corresponding measured ones using the slope method are 0.5% and 3% for monocrystalline silicon copper indium gallium di-selenide, respectively. The iterative method is 5 % and 10% for monocrystalline silicon and copper indium gallium di-selenide. Finally, for the simplified explicit 8% and 9%, for monocrystalline silicon and copper indium gallium di-selenide, respectively. The slope method gives more close results with the corresponding measured values than the other two methods for the two PV solar modules used. Consequently, the slope method is less influenced by the meteorological condition.

Los estilos APA, Harvard, Vancouver, ISO, etc.

7

Ramanujam, Jeyakumar y Udai P. Singh. "Copper indium gallium selenide based solar cells – a review". Energy & Environmental Science 10, n.º 6 (2017): 1306–19. http://dx.doi.org/10.1039/c7ee00826k.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

8

Niu, Xianghong, Yunhai Li, Yehui Zhang, Qijing Zheng, Jin Zhao y Jinlan Wang. "Highly efficient photogenerated electron transfer at a black phosphorus/indium selenide heterostructure interface from ultrafast dynamics". Journal of Materials Chemistry C 7, n.º 7 (2019): 1864–70. http://dx.doi.org/10.1039/c8tc06208k.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

9

Sun, Maojun, Wei Wang, Qinghua Zhao, Xuetao Gan, Yuanhui Sun, Wanqi Jie y Tao Wang. "ε-InSe single crystals grown by a horizontal gradient freeze method". CrystEngComm 22, n.º 45 (2020): 7864–69. http://dx.doi.org/10.1039/d0ce01271h.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

10

Rahman, Md Ferdous, Mithun Chowdhury, Latha Marasamy, Mustafa K. A. Mohammed, Md Dulal Haque, Sheikh Rashel Al Ahmed, Ahmad Irfan, Aijaz Rasool Chaudhry y Souraya Goumri-Said. "Improving the efficiency of a CIGS solar cell to above 31% with Sb₂S₃ as a new BSF: a numerical simulation approach by SCAPS-1D". RSC Advances 14, n.º 3 (2024): 1924–38. http://dx.doi.org/10.1039/d3ra07893k.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

11

Mondal, Bipanko Kumar, Shaikh Khaled Mostaque, Md Ariful Islam y Jaker Hossain. "Stress-induced phase-alteration in solution processed indium selenide thin films during annealing". RSC Advances 11, n.º 23 (2021): 13751–62. http://dx.doi.org/10.1039/d1ra01403j.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

12

Stoll, Sarah L., Edward G. Gillan y Andrew R. Barron. "Chemical vapor deposition of Gallium selenide and indium selenide nanoparticles". Chemical Vapor Deposition 2, n.º 5 (septiembre de 1996): 182–84. http://dx.doi.org/10.1002/cvde.19960020506.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

13

Jamel Kadia, Noor, Emad T. Hashim y Oday I. Abdullah. "PERFORMANCE OF DIFFERENT PHOTOVOLTAIC TECHNOLOGIES FOR AMORPHOUS SILICON (A-SI) AND COPPER INDIUM GALLIUM DI-SELENIDE (CIGS) PHOTOVOLTAIC MODULES". Journal of Engineering and Sustainable Development 26, n.º 1 (3 de enero de 2022): 95–105. http://dx.doi.org/10.31272/jeasd.26.1.10.

Texto completo

Resumen

In this work, the analysis of performance of two types of photovoltaic (PV) (Amorphous Silicon (a-Si) Copper Indium Gallium Diselenide (CIGS) technologies were achieved out under under Iraqi (Baghdad)climate conditions. The elevation of the selected site is 9 m above ground level. The experimental work covered the eight commercially available PV technologies. The two technologies that employed in this work are, Amorphous Silicon (a-Si) and Copper Indium Gallium Diselenide (CIGS). The total period of the experimental work was 7 months, and the data were analyzed simultaneously. Special attention is given to the influence of temperature and solar radiation the performance of the PV modules. Where, it was proposed a simple I-V curve test for PV modules. The results showed that the proposed system successfully experimentally extracted I-V curves of the selected two PV modules (amorphous and CIGS solar modules). The maximum values of power (Pmax) at solar radiation intensity 750 W/m² are 2.742 W, and 2.831 W for amorphous silicon and copper indium gallium di-selenide respectively. This is occurred because the lowest solar module operating temperature (19 oC and 17 oC for solar radiation 750 and 1000 W/m2 respectively) and ambient temperature (7 oC) and for Jan., 2021 than other months. Consequently, the same behavior for the two modules at solar irradiance 1000 W/m2 with the highest power value; 2.680 W, and 3.198 W of amorphous silicon and copper indium gallium di-selenide respectively. Furthermore, the minimum values of power (Pmax) at solarradiation intensity 750 W/m² are 2.530, and 2.831 for amorphous silicon and copper indium gallium di-selenide respectively because we have the highest solar module operating temperature (57 oC, and 55 oC respectively) and ambient temperature (45 oC) for April, 2021 than other months. Consequently, the same behavior for the two modules at solar irradiance 1000 W/m2 with the highest power value; 2.680 W, and 3.198 W of amorphous silicon and copper indium gallium di-selenide respectively. The highest efficiency can be notes for CIGS solar module with a value 7.3%, while the lowest one is 5.5% for amorphous solar module.

Los estilos APA, Harvard, Vancouver, ISO, etc.

14

Zhao, Qinghua, Wei Wang, Felix Carrascoso-Plana, Wanqi Jie, Tao Wang, Andres Castellanos-Gomez y Riccardo Frisenda. "The role of traps in the photocurrent generation mechanism in thin InSe photodetectors". Materials Horizons 7, n.º 1 (2020): 252–62. http://dx.doi.org/10.1039/c9mh01020c.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

15

Cruz, R. M. de la, R. Pareja, A. Segura y A. Chevy. "Positron lifetime experiments in indium selenide". Journal of Physics C: Solid State Physics 21, n.º 24 (30 de agosto de 1988): 4403–8. http://dx.doi.org/10.1088/0022-3719/21/24/006.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

16

Yu, Bin, Sanghyun Ju, Xuhui Sun, Garrick Ng, Thuc Dinh Nguyen, M. Meyyappan y David B. Janes. "Indium selenide nanowire phase-change memory". Applied Physics Letters 91, n.º 13 (24 de septiembre de 2007): 133119. http://dx.doi.org/10.1063/1.2793505.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

17

Badikov, V. V., V. I. Chizhikov, V. V. Efimenko, T. D. Efimenko, V. L. Panyutin, G. S. Shevyrdyaeva y S. I. Scherbakov. "Optical properties of lithium indium selenide". Optical Materials 23, n.º 3-4 (septiembre de 2003): 575–81. http://dx.doi.org/10.1016/s0925-3467(03)00024-7.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

18

Riera, J., A. Segura y A. Chevy. "Segregation of Silicon in Indium Selenide". Physica Status Solidi (a) 132, n.º 1 (16 de julio de 1992): K19—K21. http://dx.doi.org/10.1002/pssa.2211320129.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

19

Tamalampudi, Srinivasa Reddy, Raman Sankar, Harry Apostoleris, Mariam Ali Almahri, Boulos Alfakes, Abdulrahman Al-Hagri, Ru Li et al. "Thickness-Dependent Resonant Raman and E′ Photoluminescence Spectra of Indium Selenide and Indium Selenide/Graphene Heterostructures". Journal of Physical Chemistry C 123, n.º 24 (28 de mayo de 2019): 15345–53. http://dx.doi.org/10.1021/acs.jpcc.9b03457.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

20

Wagh, B. G., Anuradha B. Bhalerao, R. N. Bulakhe y C. D. Lokhande. "Cadmium indium selenide semiconducting nanofibers by single step electrochemical route". Modern Physics Letters B 29, n.º 06n07 (20 de marzo de 2015): 1540024. http://dx.doi.org/10.1142/s0217984915400242.

Texto completo

Resumen

The growth of ternary semiconductor thin films of cadmium indium selenide nanofibers has been carried out from aqueous solution of cadmium sulphate, indium trichloride, and selenium dioxide by electrochemical route. These thin films have been further optimized using photoelectrochemical cell (PEC). Optimized thin film has been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

Los estilos APA, Harvard, Vancouver, ISO, etc.

21

Mohamad, S. A., Wan Jeffrey Basirun, Z. A. Ibrahim, A. K. Arof y Mehdi Ebadi. "Structure Characterization of Electrodeposited Zinc Selenide Thin Films". Advanced Materials Research 264-265 (junio de 2011): 732–37. http://dx.doi.org/10.4028/www.scientific.net/amr.264-265.732.

Texto completo

Resumen

Crystalline thin of zinc selenide have been electrochemically deposited on conducting substrates of indium tin oxide, ITO glass. Initial investigation with voltammetry was done and shows that the zinc selenide films were stable towards oxidation. The best deposition potential obtained was at -0.95 V vs. Ag /AgCl while at lower deposition potentials, the films do not form well. Energy Dispersive Analysis and X-Ray spectrum indicate that the films deposited at 65oC and -0.95 V vs. Ag/AgCl have nearly stoichiometric Zn: Se ratio.

Los estilos APA, Harvard, Vancouver, ISO, etc.

22

Sun, Yuanhui, Shulin Luo, Xin-Gang Zhao, Koushik Biswas, Song-Lin Li y Lijun Zhang. "InSe: a two-dimensional material with strong interlayer coupling". Nanoscale 10, n.º 17 (2018): 7991–98. http://dx.doi.org/10.1039/c7nr09486h.

Texto completo

Resumen

Interlayer coupling in atomically thin, two-dimensional indium selenide (InSe) may have a significant impact on its properties, including large tunability in the band gap, height of band-edge state, phonon frequency, and high carrier mobility.

Los estilos APA, Harvard, Vancouver, ISO, etc.

23

Jakhmola, Priyanka R., Garima Agarwal, Prafulla K. Jha y Satya Prakash Bhatnagar. "Nanorod Formation of Copper Indium (di) Selenide Nanorod Synthesize by Solvothermal Route". Advanced Materials Research 1047 (octubre de 2014): 107–11. http://dx.doi.org/10.4028/www.scientific.net/amr.1047.107.

Texto completo

Resumen

The compound belongs to I-III-VI2 group are promising material as an effective light-absorbing materials. Now a day, ternary chalcopyrite semiconductors, especially copper based I-III-VI2 semiconductors have attracted many investigators. They have several desirable features as absorbers in the thin film solar cells. In present work, copper indium (di) selenide have been prepared via solvothermal route. Several methods have been reported to prepare CuInSe2 nanostructures by solution route. In present work, tetragonal chalcopyrite copper indium (di) selenide nanorods has been synthesized by solvothermal method using ethylene diamine as a solvent. Structural analysis had been done by X-ray diffraction (XRD). The surface morphology of the as-grown nanorod has been studied using scanning electron microscopy. The bandgap of as grown nanorods is obtained from UV-Vis spectrum which will applicable to the solar cell devices.

Los estilos APA, Harvard, Vancouver, ISO, etc.

24

Yang, Shuang, Cheng-Yan Xu, Li Yang, Sheng-Peng Hu y Liang Zhen. "Solution-phase synthesis of γ-In2Se3 nanoparticles for highly efficient photocatalytic hydrogen generation under simulated sunlight irradiation". RSC Advances 6, n.º 108 (2016): 106671–75. http://dx.doi.org/10.1039/c6ra21784b.

Texto completo

Resumen

Hexagonal indium selenide (In₂Se₃) nanoparticles were successfully synthesized by a hot-injection method using triethylene glycol as solvent, which have superior and stable photocatalytic hydrogen generation under simulated sunlight irradiation.

Los estilos APA, Harvard, Vancouver, ISO, etc.

25

Chen, Tenghui, Zhongjun Li, Chunxiang Zhang, Zhenhong Wang, Mulin Luo, Yuan Zhang, Yachao Wang, Quanlan Xiao, Han Zhang y Jun Liu. "Indium selenide for Q-switched pulse generation in a mid-infrared fiber laser". Journal of Materials Chemistry C 9, n.º 18 (2021): 5893–98. http://dx.doi.org/10.1039/d1tc00727k.

Texto completo

Resumen

A novel broadband two-dimensional material, indium selenide (InSe), is prepared and characterized in the mid-infrared wavelength region. Stable Q-switching pulses are obtained from a 2.8 μm Er-ZBLAN fiber laser based on the InSe saturable absorber.

Los estilos APA, Harvard, Vancouver, ISO, etc.

26

STOLL, S. L., E. G. GILLAN y A. R. BARRON. "ChemInform Abstract: Chemical Vapor Deposition of Gallium Selenide and Indium Selenide Nanoparticles." ChemInform 27, n.º 51 (4 de agosto de 2010): no. http://dx.doi.org/10.1002/chin.199651219.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

27

Kaminskii, V. M., Z. D. Kovalyuk, V. I. Ivanov, I. G. Tkachyuk y V. V. Netyaga. "Electrical Properties of Cd Doped InSe Crystals". Фізика і хімія твердого тіла 19, n.º 2 (3 de mayo de 2019): 159–62. http://dx.doi.org/10.15330/pcss.19.2.159-162.

Texto completo

Resumen

The measurements of electrical conductivity along (alternating electric field) and across (direct electric field)the crystallographic C axis of Cd‐doped indium selenide single crystals are carried out. The parameters of thehopping conductivity of InSe <Cd> are calculated.

Los estilos APA, Harvard, Vancouver, ISO, etc.

28

Rai, Akash, Vinod K. Sangwan, J. Tyler Gish, Mark C. Hersam y David G. Cahill. "Anisotropic thermal conductivity of layered indium selenide". Applied Physics Letters 118, n.º 7 (15 de febrero de 2021): 073101. http://dx.doi.org/10.1063/5.0042091.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

29

Zheng, Kai, Heping Cui, Jiabing Yu y Xianping Chen. "Indium Selenide/Antimonene Heterostructure for Multifunctional Optoelectronics". IEEE Transactions on Electron Devices 69, n.º 3 (marzo de 2022): 1155–61. http://dx.doi.org/10.1109/ted.2022.3140363.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

30

Trah, H. P. y V. Krämer. "Crystal structure of zinc indium selenide, ZnIn2Se4". Zeitschrift für Kristallographie 173, n.º 3-4 (enero de 1985): 199–203. http://dx.doi.org/10.1524/zkri.1985.173.3-4.199.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

31

Kulakci, Mustafa, Tahir Colakoglu, Baris Ozdemir, Mehmet Parlak, Husnu Emrah Unalan y Rasit Turan. "Silicon nanowire–silver indium selenide heterojunction photodiodes". Nanotechnology 24, n.º 37 (23 de agosto de 2013): 375203. http://dx.doi.org/10.1088/0957-4484/24/37/375203.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

32

Geretovszky, Zs, K. Deppert, L. S. Karlsson, M. N. A. Karlsson, J. O. Malm y M. Mühlberg. "Aerosol Phase Generation of Indium–Selenide Nanoparticles". Journal of Nanoscience and Nanotechnology 6, n.º 3 (1 de marzo de 2006): 600–611. http://dx.doi.org/10.1166/jnn.2006.084.

Texto completo

Resumen

Results on the generation and heat treatment of In–Se nanoparticles, made by heterogeneous condensation of selenium on indium nanoparticles synthesised via the evaporation/condensation route are reported. In-situ aerosol measurements are complemented with ex-situ analysis, to provide structural, morphological, and compositional information on the In–Se nanoparticles. Our results indicate that prior to heat treatment In–Se nanoparticles have a shape in the aerosol phase, similar to an asymmetric dumbbell. The bigger particle of the dumbbell structure is made up of amorphous Se, while the overall composition of the polycrystalline smaller particle is around InSe. The smaller particle has an intrinsic structure, and consists of different InSe-compounds, with a decreasing In content towards the shell. The shape of the In–Se nanoparticles is different in the aerosol phase and on the surface of the samples. The observed variety of particle sizes and shapes on the sample surface is shown to be partly due to the agglomeration of the aerosol phase binaries (i.e., dumbbells) via coalescence on the surface of the sample and wetting of the sample surface by the Se nanoparticles. These processes make the bigger particle of the dumbbell structure appear almost perfectly hemispherical on the sample surfaces. During heat treatment at lower temperatures mainly the evaporative removal of the big Se particle of the dumbbell structure will take place. Annealing of the smaller particles starts to dominate at temperatures above 240 °C and makes the composition of the small particles closer to that of the thermodynamically most favoured In2Se3.

Los estilos APA, Harvard, Vancouver, ISO, etc.

33

Paraskevopoulos, K. M., C. Julien, M. Balkanski y C. Porte. "Photoluminescence spectra of Li-intercalated indium selenide". Journal of Luminescence 42, n.º 1 (junio de 1988): 15–20. http://dx.doi.org/10.1016/0022-2313(88)90060-9.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

34

El-Sayed, S. M. "Optical investigations of the indium selenide glasses". Vacuum 72, n.º 2 (octubre de 2003): 169–75. http://dx.doi.org/10.1016/s0042-207x(03)00139-8.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

35

Mar�, B., A. Segura y A. Chevy. "Tin-related shallow donor in indium selenide". Applied Physics A Solids and Surfaces 46, n.º 2 (junio de 1988): 125–29. http://dx.doi.org/10.1007/bf00615920.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

36

Riera, J., A. Segura y A. Chevy. "Photoluminescence in silicon-doped n-indium selenide". Physica Status Solidi (a) 142, n.º 1 (16 de marzo de 1994): 265–74. http://dx.doi.org/10.1002/pssa.2211420129.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

37

Thornton, John A. y T. C. Lommasson. "Magnetron reactive sputtering of copper-indium-selenide". Solar Cells 16 (enero de 1986): 165–80. http://dx.doi.org/10.1016/0379-6787(86)90082-7.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

38

MASSACCESI, S., S. SANCHEZ y J. VEDEL. "ChemInform Abstract: Electrodeposition of Indium Selenide In2Se3." ChemInform 27, n.º 51 (4 de agosto de 2010): no. http://dx.doi.org/10.1002/chin.199651021.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

39

Lukyanyuk, V. K., M. V. Tovarnitskii y Z. D. Kovalyuk. "Transport properties of sodium intercalated indium selenide". Physica Status Solidi (a) 104, n.º 1 (16 de noviembre de 1987): K41—K45. http://dx.doi.org/10.1002/pssa.2211040145.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

40

Mucha, I. "Phase diagram for the quasi-binary thallium(I) selenide–indium(III) selenide system". Thermochimica Acta 550 (diciembre de 2012): 1–4. http://dx.doi.org/10.1016/j.tca.2012.09.028.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

41

Mitzi, David B., Oki Gunawan, Teodor K. Todorov y D. Aaron R. Barkhouse. "Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, n.º 1996 (13 de agosto de 2013): 20110432. http://dx.doi.org/10.1098/rsta.2011.0432.

Texto completo

Resumen

While cadmium telluride and copper–indium–gallium–sulfide–selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr −1 production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper–zinc–tin–sulfide–selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there is still a sizeable performance gap between the kesterite CZTSSe and the more mature CdTe and CIGSSe technologies. This review will discuss recent progress in the CZTSSe field, especially focusing on a direct comparison with analogous higher performing CIGSSe to probe the performance bottlenecks in Earth-abundant kesterite devices. Key limitations in the current generation of CZTSSe devices include a shortfall in open circuit voltage relative to the absorber band gap and secondarily a high series resistance, which contributes to a lower device fill factor. Understanding and addressing these performance issues should yield closer performance parity between CZTSSe and CdTe/CIGSSe absorbers and hopefully facilitate a successful launch of commercialization for the kesterite-based technology.

Los estilos APA, Harvard, Vancouver, ISO, etc.

42

Salloum, D., P. Gougeon y M. Potel. "Ho0.76In1.68Mo15Se19". Acta Crystallographica Section E Structure Reports Online 62, n.º 4 (8 de marzo de 2006): i83—i85. http://dx.doi.org/10.1107/s1600536806007446.

Texto completo

Resumen

The structure of holmium indium molybdenum selenide, Ho0.76In1.68Mo15Se19, isotypic with In2.9Mo15Se19 [Grüttner, Yvon, Chevrel, Potel, Sergent & Seeber (1979). Acta Cryst. B35, 285–292], is characterized by two cluster units Mo6Se i 8Se a 6 and Mo9Se i 11Se a 6 (where i = inner and a = apical) that are present in a 1:1 ratio. The cluster units are centered at Wyckoff positions 2b and 2c and have point-group symmetry \overline{3} and \overline{6}, respectively. The clusters are interconnected through additional Mo—Se bonds. In the title compound, Ho3+ cations replace the trivalent indium observed in In2.9Mo15Se19, and a deficiency is observed on the monovalent indium site.

Los estilos APA, Harvard, Vancouver, ISO, etc.

43

Kushwah, Nisha, G. Kedarnath, A. Wadawale, Gourab Karmakar, Sanjay Kumar y Amit P. Srivastava. "Synthesis and characterization of methyl indium 4,6-dimethyl-2-pyrimidyl selenolates and its utility for indium selenide, CuInSe2 nanostructures and indium selenide thin films". Journal of Materials Research 37, n.º 7 (1 de abril de 2022): 1341–56. http://dx.doi.org/10.1557/s43578-022-00538-w.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

44

Rella, R., P. Siciliano y A. Tepore. "Deep Levels in Doped Indium Selenide Single Crystals". Materials Science Forum 203 (febrero de 1996): 65–70. http://dx.doi.org/10.4028/www.scientific.net/msf.203.65.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

45

Chitra, Venkatapathy, Kalimuthu Ananthi y S. Vasantha. "Photoelectrochemical Behaviour of Copper Indium Selenide Thin Films". Advanced Materials Research 678 (marzo de 2013): 343–48. http://dx.doi.org/10.4028/www.scientific.net/amr.678.343.

Texto completo

Resumen

Copper Indium Selenide (CIS) thin films were pulse electrodeposited at room temperature and at different duty cycles in the range of 6 – 50 %. Deposition current density was kept constant at 5 ma cm-2 in the present work. The total deposition time was 60 min. The precursors used were AR grade 0.3 M of each CuCl2 and InCl3, along with 0.2 M of SeO2. Thickness of the films estimated by Mitutoyo surface profilometer varied in the range of 0.8 to 1.2 μm with increase of duty cycle. XRD patterns of CIS films deposited at different duty cycles exhibit the chalcopyrite structure. Composition of the films indicated Cu/In ratio is greater than 1. Optical absorption studies indicated a direct energy band gap of 0.95 eV. Surface morphology of the films indicated that the grain size increased from 15 nm to 40 nm as the duty cycle increased. It is observed that as the duty cycle increases, the resistvity increases from 1.0 ohm cm to 10 ohm cm. The films were used as photoelectrodes in 0.5 M polysulphide redox electrolyte (0.5 M each Na2S, NaOH, S). At 60 mW cm-2, an open circuit voltage of 0.465 V and short circuit current density of 3.87 mA cm-2 were observed for the films deposited at 50 % duty cycle.

Los estilos APA, Harvard, Vancouver, ISO, etc.

46

Segura, Alfredo. "Layered Indium Selenide under High Pressure: A Review". Crystals 8, n.º 5 (9 de mayo de 2018): 206. http://dx.doi.org/10.3390/cryst8050206.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

47

Wang, Cheng, Xianhui Bu, Nanfeng Zheng y Pingyun Feng. "Indium selenide superlattices from (In10Se18)6– supertetrahedral clusters". Chemical Communications, n.º 13 (22 de mayo de 2002): 1344–45. http://dx.doi.org/10.1039/b203253h.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

48

Yang, Jiwoong, Jae-Yup Kim, Jung Ho Yu, Tae-Young Ahn, Hyunjae Lee, Tae-Seok Choi, Young-Woon Kim, Jin Joo, Min Jae Ko y Taeghwan Hyeon. "Copper–indium–selenide quantum dot-sensitized solar cells". Physical Chemistry Chemical Physics 15, n.º 47 (2013): 20517. http://dx.doi.org/10.1039/c3cp54270j.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

49

Tyrrell, Sophie, Małgorzata Swadźba-Kwaśny y Peter Nockemann. "Ionothermal, microwave-assisted synthesis of indium(iii) selenide". Journal of Materials Chemistry A 2, n.º 8 (2014): 2616. http://dx.doi.org/10.1039/c3ta14478j.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

50

Riera, J., A. Segura y A. Chevy. "Transport properties of silicon doped n-indium selenide". Applied Physics A Solids and Surfaces 54, n.º 5 (mayo de 1992): 428–30. http://dx.doi.org/10.1007/bf00324166.

Texto completo

Los estilos APA, Harvard, Vancouver, ISO, etc.

Ofrecemos descuentos en todos los planes premium para autores cuyas obras están incluidas en selecciones literarias temáticas. ¡Contáctenos para obtener un código promocional único!