Literatura académica sobre el tema "InAs/AlSb QCLs"

The extension of the available spectral range covered by quantum cascade lasers (QCL) would allow one to address new molecular spectroscopy applications, in particular in the long wavelength domain of the mid-infrared. We report in this paper the realization of distributed feedback (DFB) QCLs, made of InAs and AlSb, that demonstrated a continuous wave (CW) and a single mode emission at a wavelength of 17.7 µm, with output powers in the mW range. This is the longest wavelength for DFB QCLs, and for any QCLs or semiconductor lasers in general, operating in a CW at room temperature.

Abstract InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 m 0, enhancing the optical transition strength, and a high conduction band offset of 2.28 eV, reducing the noise and allowing for high optical transition energies. InAs and AlSb strain balance each other on GaSb with an InAs:AlSb ratio of 0.96:1. To regain the freedom of a lattice-matched material system regarding the optimization of a QCD design, submonolayer InSb layers are introduced. With strain engineering, four different active regions between 3.65 and 5.5 µm were designed with InAs:AlSb thickness ratios of up to 2.8:1, and subsequently grown and characterized. This includes an optimized QCD design at 4.3 µm, with a room-temperature peak responsivity of 26.12 mA/W and a detectivity of 1.41 × 108 Jones. Additionally, all QCD designs exhibit higher-energy interband signals in the mid- to near-infrared, stemming from the InAs/AlSb type-II alignment and the narrow InAs band gap.

The InAs/GaSb superlattices (SPLs) was an important component of Quantum Cascade Laser (QCL) and Interband Cascade Laser (ICL). In particular, the upper and lower SPLs waveguide layers and active regions of the ICL were alternately grown from a large number of ultra-film epitaxial layers (nm) by Molecular Beam Epitaxy(MBE). Subtle lattice mismatch may directly lead to the deterioration of material crystal quality, and the thickness, which the composition change of each layer will strongly affect the structural performance of device materials. The optimal growth temperature of InAs/GaSb SPLs were about 420℃. By growing 40× short period GaSb/AlSb and InAs/GaSb SPLs with the substrate rotating, the thickness of GaSb and AlSb layers were 5.448 nm and 3.921 nm, and the thickness of InAs and GaSb layers were 8.998 nm and 13.77 nm, respectively. The error was about 10%, and the optimal growth conditions of InAs/AlSb SPLs were obtained. Due to the lattice matched, the 40× InAs/away as injection on the average lattice constant of InAs/AlSb SPLs were fully considered. Under the condition that the soak time was fixed by 3s, the average lattice constant of SPLs was adjusted by changing the as pressure to 1.7e^-6 mbar to achieve lattice matching on the GaSb substrate. The results showed that the 0 order satellite peak of the SPLs coincides with the peak of the GaSb substrate, indicated perfect lattice matching, and the sharp of second order satellite peak also showed excellent structural quality of the SPLs structure.

Disertaciniame darbe nagrinėjamas InAs/AlSb medžiagų sistemos panaudojimas trumpabangių tarppajuostinių lazerių kūrimui. Buvo išplėtota molekulinių pluoštelių epitaksijos technologija, leidžianti auginti daugiaperiodines neįtemptas InAs/AlSb heterosandūras su mažu 1-2 atominių sluoksnių šiurkštumu. Buvo parodyta, jog InAs/AlSb medžiagų sistema yra tinkama kurti trumpabangiams kvantiniams kaskadiniams lazeriams, veikiantiems žemiau 4 µm bangos ilgio ribos. Buvo ištirtas kvantinių kaskadinių lazerių, turinčių tiek plazmoninius bangolaidžius su stipriai legiruotais InAs apdariniais sluoksniais, tiek ir mažo periodo InAs/AlSb supergardelių bangolaidžius, veikimas bei jų įtaka prietaiso parametrams. Šie sprendimai dėl bangolaidžių bei tolimesni aktyviosios terpės patobulinimai, naudojant piltuvėlio formos injektorių, leido sukurti didelio našumo prietaisus, galinčius veikti iki 420 K temperatūros, esant 3,3 µm bangos ilgio emisijai, ir pasiekti maksimalią optinę galią siekiančią 1 W kambario temperatūroje. Šios inovacijos leido sukurti ir InAs/AlSb kvantinį kaskadinį lazerį, emituojantį ~2,6 µm bangos ilgio spinduliuotę  šiai dienai tai yra trumpiausią bangos ilgį spinduliuojantis tokio tipo prietaisas pasaulyje.
Application of InAs/AlSb materials system for development of short-wavelength quantum cascade lasers is explored. Molecular beam epitaxy (MBE) technology allowing to grow multiperiodical unstrained InAs/AlSb heterostructures with roughness of 1-2 monolayers is developed. It is demonstrated that InAs/AlSb materials system is well-suitable for development of short-wavelength quantum cascade lasers operating below 4 µm wavelength. Lasers containing plasmon-enhanced waveguides as well as the short period InAs/AlSb superlattices as waveguides were designed, MBE-grown and studied. The effect of waveguide properties on the device parameters is revealed. Usage of these waveguides and innovations in laser active region introducing “funnel” injector allowed one to reach operation temperature 420 K at the emission wavelength of 3.3 µm. The obtained optical peak power exceeded 1 W per facet. The room temperature operation has been obtained at wavelength below 3 µm. As for wavelength range, applying the new active region design strategy and the short period InAs/AlSb superlattice spacers InAs based quantum cascade lasers emitting at the wavelengths as short as 2.63 µm were developed, which is today the shortest emission wavelength of the operation of semiconductor lasers based on the intersubband transitions.

Application of InAs/AlSb materials system for development of short-wavelength quantum cascade lasers is explored. Molecular beam epitaxy (MBE) technology allowing to grow multiperiodical unstrained InAs/AlSb heterostructures with roughness of 1-2 monolayers is developed. It is demonstrated that InAs/AlSb materials system is well-suitable for development of short-wavelength quantum cascade lasers operating below 4 µm wavelength. Lasers containing plasmon-enhanced waveguides as well as the short period InAs/AlSb superlattices as waveguides were designed, MBE-grown and studied. The effect of waveguide properties on the device parameters is revealed. Usage of these waveguides and innovations in laser active region introducing “funnel” injector allowed one to reach operation temperature 420 K at the emission wavelength of 3.3 µm. The obtained optical peak power exceeded 1 W per facet. The room temperature operation has been obtained at wavelength below 3 µm. As for wavelength range, applying the new active region design strategy and the short period InAs/AlSb superlattice spacers InAs based quantum cascade lasers emitting at the wavelengths as short as 2.63 µm were developed, which is today the shortest emission wavelength of the operation of semiconductor lasers based on the intersubband transitions.
Disertaciniame darbe nagrinėjamas InAs/AlSb medžiagų sistemos panaudojimas trumpabangių tarppajuostinių lazerių kūrimui. Buvo išplėtota molekulinių pluoštelių epitaksijos technologija, leidžianti auginti daugiaperiodines neįtemptas InAs/AlSb heterosandūras su mažu 1-2 atominių sluoksnių šiurkštumu. Buvo parodyta, jog InAs/AlSb medžiagų sistema yra tinkama kurti trumpabangiams kvantiniams kaskadiniams lazeriams, veikiantiems žemiau 4 µm bangos ilgio ribos. Buvo ištirtas kvantinių kaskadinių lazerių, turinčių tiek plazmoninius bangolaidžius su stipriai legiruotais InAs apdariniais sluoksniais, tiek ir mažo periodo InAs/AlSb supergardelių bangolaidžius, veikimas bei jų įtaka prietaiso parametrams. Šie sprendimai dėl bangolaidžių bei tolimesni aktyviosios terpės patobulinimai, naudojant piltuvėlio formos injektorių, leido sukurti didelio našumo prietaisus, galinčius veikti iki 420 K temperatūros, esant 3,3 µm bangos ilgio emisijai, ir pasiekti maksimalią optinę galią siekiančią 1 W kambario temperatūroje. Šios inovacijos leido sukurti ir InAs/AlSb kvantinį kaskadinį lazerį, emituojantį ~2,6 µm bangos ilgio spinduliuotę  šiai dienai tai yra trumpiausią bangos ilgį spinduliuojantis tokio tipo prietaisas pasaulyje.