Artículos de revistas sobre el tema "III-NITRIDE DEVICE"
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Jamal-Eddine, Zane, Yuewei Zhang y Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics". International Journal of High Speed Electronics and Systems 28, n.º 01n02 (marzo de 2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.
Texto completoMuthuraj, Vineeta R., Caroline E. Reilly, Thomas Mates, Shuji Nakamura, Steven P. DenBaars y Stacia Keller. "Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition". Applied Physics Letters 122, n.º 14 (3 de abril de 2023): 142103. http://dx.doi.org/10.1063/5.0142941.
Texto completoHangleiter, Andreas. "III–V Nitrides: A New Age for Optoelectronics". MRS Bulletin 28, n.º 5 (mayo de 2003): 350–53. http://dx.doi.org/10.1557/mrs2003.99.
Texto completoBaten, Md Zunaid, Shamiul Alam, Bejoy Sikder y Ahmedullah Aziz. "III-Nitride Light-Emitting Devices". Photonics 8, n.º 10 (7 de octubre de 2021): 430. http://dx.doi.org/10.3390/photonics8100430.
Texto completoFu, Wai Yuen y Hoi Wai Choi. "Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes". Journal of Applied Physics 132, n.º 6 (14 de agosto de 2022): 060903. http://dx.doi.org/10.1063/5.0089750.
Texto completoZolper, J. C. y R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors". MRS Bulletin 22, n.º 2 (febrero de 1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.
Texto completoFu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications". ECS Meeting Abstracts MA2022-02, n.º 34 (9 de octubre de 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.
Texto completoZhang, Shuai, Bingcheng Zhu, Zheng Shi, Jialei Yuan, Yuan Jiang, Xiangfei Shen, Wei Cai, Yongchao Yang y Yongjin Wang. "Spatial signal correlation from an III-nitride synaptic device". Superlattices and Microstructures 110 (octubre de 2017): 296–304. http://dx.doi.org/10.1016/j.spmi.2017.08.028.
Texto completoGaevski, Mikhail, Jianyu Deng, Grigory Simin y Remis Gaska. "500 °C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (1 de enero de 2014): 000084–89. http://dx.doi.org/10.4071/hitec-tp16.
Texto completoIslam, Md Sherajul, Md Arafat Hossain, Sakib Mohammed Muhtadi y Ashraful G. Bhuiyan. "Transport Properties of Insulated Gate AlInN/InN Heterojunction Field Effect Transistor". Advanced Materials Research 403-408 (noviembre de 2011): 64–69. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.64.
Texto completoJoglekar, Sameer, Mohamed Azize y Tomás Palacios. "Reactive sputtering of III-N materials for applications in electronic devices". MRS Advances 1, n.º 2 (2016): 141–46. http://dx.doi.org/10.1557/adv.2016.38.
Texto completoKhan, Asif y Krishnan Balakrishnan. "Present Status of Deep UV Nitride Light Emitters". Materials Science Forum 590 (agosto de 2008): 141–74. http://dx.doi.org/10.4028/www.scientific.net/msf.590.141.
Texto completoJohnson, M. A. L., Zhonghai Yu, J. D. Brown, F. A. Koeck, N. A. El-Masry, H. S. Kong, J. A. Edmond, J. W. Cook y J. F. Schetzina. "A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 594–99. http://dx.doi.org/10.1557/s1092578300003100.
Texto completoFunato, Mitsuru y Yoichi Kawakami. "Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy". MRS Bulletin 34, n.º 5 (mayo de 2009): 334–40. http://dx.doi.org/10.1557/mrs2009.96.
Texto completoZavada, J. M. "Revisiting Impurity Doping of III-Nitride Materials for Photonic Device Applications". ECS Transactions 50, n.º 6 (15 de marzo de 2013): 253–59. http://dx.doi.org/10.1149/05006.0253ecst.
Texto completoBrunner, F., J.-T. Zettler y M. Weyers. "Advanced in-situ control for III-nitride RF power device epitaxy". Semiconductor Science and Technology 33, n.º 4 (26 de marzo de 2018): 045014. http://dx.doi.org/10.1088/1361-6641/aab410.
Texto completoRienzi, Vincent, Jordan Smith, Norleakvisoth Lim, Hsun-Ming Chang, Philip Chan, Matthew S. Wong, Michael J. Gordon, Steven P. DenBaars y Shuji Nakamura. "Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer". Crystals 12, n.º 8 (15 de agosto de 2022): 1144. http://dx.doi.org/10.3390/cryst12081144.
Texto completoHite, Jennifer K. "A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices". Crystals 13, n.º 3 (24 de febrero de 2023): 387. http://dx.doi.org/10.3390/cryst13030387.
Texto completoLiu, Zhiyuan, Yi Lu y Xiaohang Li. "53‐1: Invited Paper: Enhanced Performance of III‐Nitride‐Based Light‐Emitting Diodes Through Novel Band Engineering and Fabrication Technology". SID Symposium Digest of Technical Papers 54, n.º 1 (junio de 2023): 761–62. http://dx.doi.org/10.1002/sdtp.16672.
Texto completoKhediri, Abdelkrim, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher y Ali Soltani. "Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT". Micromachines 12, n.º 11 (21 de octubre de 2021): 1284. http://dx.doi.org/10.3390/mi12111284.
Texto completoFernández, Susana, Fernando B. Naranjo, Miguel Ángel Sánchez-García y Enrique Calleja. "III-Nitrides Resonant Cavity Photodetector Devices". Materials 13, n.º 19 (5 de octubre de 2020): 4428. http://dx.doi.org/10.3390/ma13194428.
Texto completoChen, Qi, Yue Yin, Fang Ren, Meng Liang, Xiaoyan Yi y Zhiqiang Liu. "Van der Waals Epitaxy of III-Nitrides and Its Applications". Materials 13, n.º 17 (31 de agosto de 2020): 3835. http://dx.doi.org/10.3390/ma13173835.
Texto completoKang, Jian-Bin, Qian Li y Mo Li. "Effects of material structure on device efficiency of III-nitride intersubband photodetectors". Acta Physica Sinica 68, n.º 22 (2019): 228501. http://dx.doi.org/10.7498/aps.68.20190722.
Texto completoPurnamaningsih, Retno Wigajatri, Nyi Raden Poespawati y Elhadj Dogheche. "III-Nitride Semiconductors based Optical Power Splitter Device Design for underwater Application". International Journal of Electrical and Computer Engineering (IJECE) 8, n.º 5 (1 de octubre de 2018): 3866. http://dx.doi.org/10.11591/ijece.v8i5.pp3866-3874.
Texto completoBhouri, A., A. Ben Fredj, J. L. Lazzari y M. Said. "Band offset calculations applied to III–V nitride quantum well device engineering". Superlattices and Microstructures 36, n.º 4-6 (octubre de 2004): 799–806. http://dx.doi.org/10.1016/j.spmi.2004.09.036.
Texto completoZhao, Chao, Nasir Alfaraj, Ram Chandra Subedi, Jian Wei Liang, Abdullah A. Alatawi, Abdullah A. Alhamoud, Mohamed Ebaid, Mohd Sharizal Alias, Tien Khee Ng y Boon S. Ooi. "III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications". Progress in Quantum Electronics 61 (septiembre de 2018): 1–31. http://dx.doi.org/10.1016/j.pquantelec.2018.07.001.
Texto completoJena, Debdeep, John Simon, Albert Kejia Wang, Yu Cao, Kevin Goodman, Jai Verma, Satyaki Ganguly et al. "Polarization-engineering in group III-nitride heterostructures: New opportunities for device design". physica status solidi (a) 208, n.º 7 (8 de junio de 2011): 1511–16. http://dx.doi.org/10.1002/pssa.201001189.
Texto completoMasui, Hisashi y Shuji Nakamura. "Nonpolar and Semipolar Orientations: Material Growth and Properties". Materials Science Forum 590 (agosto de 2008): 211–32. http://dx.doi.org/10.4028/www.scientific.net/msf.590.211.
Texto completoWong, Matthew S., Philip Chan, Norleakvisoth Lim, Haojun Zhang, Ryan C. White, James S. Speck, Steven P. Denbaars y Shuji Nakamura. "Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer". Crystals 12, n.º 5 (19 de mayo de 2022): 721. http://dx.doi.org/10.3390/cryst12050721.
Texto completoHagar, B. G., M. Abdelhamid, E. L. Routh, P. C. Colter y S. M. Bedair. "Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD". Applied Physics Letters 121, n.º 5 (1 de agosto de 2022): 052104. http://dx.doi.org/10.1063/5.0103152.
Texto completoMudiyanselage, Dinusha Herath, Dawei Wang, Yuji Zhao y Houqiang Fu. "Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications". Journal of Applied Physics 131, n.º 21 (7 de junio de 2022): 210901. http://dx.doi.org/10.1063/5.0088021.
Texto completoBrown, J. M., F. A. Baiocchi, D. S. Williams, R. C. Beairsto, R. V. Knoell y S. P. Murarka. "Rutherford backscattering & TEM studies of nitrogen, oxygen & argon incorporation in sputter-deposited titanium nitride films". Proceedings, annual meeting, Electron Microscopy Society of America 45 (agosto de 1987): 250–51. http://dx.doi.org/10.1017/s0424820100126159.
Texto completoKOMIRENKO, S. M., K. W. KIM, V. A. KOCHELAP y M. A. STROSCIO. "HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES". International Journal of High Speed Electronics and Systems 12, n.º 04 (diciembre de 2002): 1057–81. http://dx.doi.org/10.1142/s0129156402001927.
Texto completoWeisbuch, Claude, Shuji Nakamura, Yuh-Renn Wu y James S. Speck. "Disorder effects in nitride semiconductors: impact on fundamental and device properties". Nanophotonics 10, n.º 1 (18 de noviembre de 2020): 3–21. http://dx.doi.org/10.1515/nanoph-2020-0590.
Texto completoPavlidis, Spyridon, Dolar Khachariya, Dennis Szymanski, Pramod Reddy, Erhard Kohn, Zlatko Sitar y Ramon Collazo. "(Invited, Digital Presentation) Exploring Interfaces and Polarity to Realize Vertical III-Nitride Superjunction Devices". ECS Meeting Abstracts MA2022-01, n.º 31 (7 de julio de 2022): 1313. http://dx.doi.org/10.1149/ma2022-01311313mtgabs.
Texto completoMozharov, A. M., A. A. Vasiliev, A. D. Bolshakov, G. A. Sapunov, V. V. Fedorov, G. E. Cirlin y I. S. Mukhin. "Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential". Физика и техника полупроводников 52, n.º 4 (2018): 475. http://dx.doi.org/10.21883/ftp.2018.04.45824.13.
Texto completoMozharov, A. M., A. A. Vasiliev, A. D. Bolshakov, G. A. Sapunov, V. V. Fedorov, G. E. Cirlin y I. S. Mukhin. "Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential". Semiconductors 52, n.º 4 (abril de 2018): 489–92. http://dx.doi.org/10.1134/s1063782618040231.
Texto completoAnnab, N., T. Baghdadli, S. Mamoun y A. E. Merad. "Numerical simulation of highly photovoltaic efficiency of InGaN based solar cells with ZnO as window layer". Journal of Ovonic Research 19, n.º 4 (agosto de 2023): 421–31. http://dx.doi.org/10.15251/jor.2023.194.421.
Texto completoMeneghesso, Gaudenzio, Matteo Meneghini, Augusto Tazzoli, Nicolo' Ronchi, Antonio Stocco, Alessandro Chini y Enrico Zanoni. "Reliability issues of Gallium Nitride High Electron Mobility Transistors". International Journal of Microwave and Wireless Technologies 2, n.º 1 (febrero de 2010): 39–50. http://dx.doi.org/10.1017/s1759078710000097.
Texto completoKIM, K. W., V. A. KOCHELAP, V. N. SOKOLOV y S. M. KOMIRENKO. "QUASI-BALLISTIC AND OVERSHOOT TRANSPORT IN GROUP III-NITRIDES". International Journal of High Speed Electronics and Systems 14, n.º 01 (marzo de 2004): 127–54. http://dx.doi.org/10.1142/s0129156404002272.
Texto completoLi, Kexin y Shaloo Rakheja. "Modeling and Simulation of Quasi-Ballistic III-Nitride Transistors for RF and Digital Applications". International Journal of High Speed Electronics and Systems 28, n.º 01n02 (marzo de 2019): 1940011. http://dx.doi.org/10.1142/s0129156419400111.
Texto completoHo, W. Y., W. K. Fong, Charles Surya, K. Y. Tong, L. W. Lu y W. K. Ge. "Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 560–64. http://dx.doi.org/10.1557/s1092578300003045.
Texto completoEl-Ghoroury, Hussein S., Mikhail V. Kisin y Chih-Li Chuang. "III-Nitride Multi-Quantum-Well Light Emitting Structures with Selective Carrier Injection". Applied Sciences 9, n.º 18 (15 de septiembre de 2019): 3872. http://dx.doi.org/10.3390/app9183872.
Texto completoChandrasekar, Hareesh. "Substrate Effects in GaN-on-Silicon RF Device Technology". International Journal of High Speed Electronics and Systems 28, n.º 01n02 (marzo de 2019): 1940001. http://dx.doi.org/10.1142/s0129156419400019.
Texto completoKhafagy, Khaled H., Tarek M. Hatem y Salah M. Bedair. "Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities". MRS Advances 4, n.º 13 (2019): 755–60. http://dx.doi.org/10.1557/adv.2019.49.
Texto completoKuball, M., M. Benyoucef, F. H. Morrissey y C. T. Foxon. "Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping". MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 950–56. http://dx.doi.org/10.1557/s1092578300005317.
Texto completoOnyeaju, M. C., A. N. Ikot, C. A. Onate, E. Aghemenloh y H. Hassanabadi. "Electronic states in core/shell GaN/YxGa1−xN quantum well (QW) with the modified Pöschl–Teller plus Woods–Saxon potential in the presence of electric field". International Journal of Modern Physics B 31, n.º 15 (7 de marzo de 2017): 1750119. http://dx.doi.org/10.1142/s0217979217501193.
Texto completoMi, Zetian. "(Invited) Artificial Photosynthesis on III-Nitride Nanowire Arrays". ECS Meeting Abstracts MA2018-01, n.º 31 (13 de abril de 2018): 1850. http://dx.doi.org/10.1149/ma2018-01/31/1850.
Texto completoSIMIN, G., M. ASIF KHAN, M. S. SHUR y R. GASKA. "INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS". International Journal of High Speed Electronics and Systems 14, n.º 01 (marzo de 2004): 197–224. http://dx.doi.org/10.1142/s0129156404002302.
Texto completoBulashevich, Kirill, Sergey Konoplev y Sergey Karpov. "Effect of Die Shape and Size on Performance of III-Nitride Micro-LEDs: A Modeling Study". Photonics 5, n.º 4 (27 de octubre de 2018): 41. http://dx.doi.org/10.3390/photonics5040041.
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