Tesis sobre el tema "III-NITRIDE DEVICE"
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Monika, Sadia K. "III- Nitride Enhancement Mode Device". The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1483535296785214.
Texto completoLiu, Jie. "Channel engineering of III-nitride HEMTs for enhanced device performance /". View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ECED%202006%20LIUJ.
Texto completoEiting, Christopher James. "Growth of III-V nitride materials by MOCVD for device applications /". Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Texto completoFeng, Zhihong. "Enhanced device performance of III-nitride HEMTs on sapphire substrates by MOCVD /". View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202006%20FENG.
Texto completoNath, Digbijoy N. "Advanced polarization engineering of III-nitride heterostructures towards high-speed device applications". The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1376927078.
Texto completoNguyen, Hieu. "Molecular beam epitaxial growth, characterization and device applications of III-Nitride nanowire heterostructures". Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=107905.
Texto completoRécemment, les hétérostructures à base de nitride et de groupe III ont fait l'objet de recherches intensives. Grâce à la relaxation latérale effective du stress, de telles hétérostructures d'échelle nanométrique peuvent être déposés sur du Silicium ou d'autres substrats. Celles-ci démontrent une réduction dramatique des dislocations et des champs de polarisations comparativement à leurs contreparties planes. Cette dissertation rapporte l'accomplissement d'une nouvelle classe de matériau nanométrique, soit des hétérostructures III-nitride incluant InGaN/GaN point dans fils ainsi que des nanofils d'InN presque sans défauts sur du Silicium. De plus, nous avons développé une nouvelle génération de dispositifs à base de nanofils, incluant des diodes émettrices de lumière (LEDs) à efficacité ultra haute et spectre visible complet ainsi que des cellules solaires sur une gaufre de Silicium. Nous avons identifié 2 mécanismes majeurs, incluant le faible transport des trous et le surplus d'électrons, qui limitent sérieusement la performance des LEDs à base de nanofils de GaN. Avec l'ajout de certaines techniques spéciales de modulation de type p, et une couche bloquante d'électrons faite de AlGaN dans la région active de la LED point dans fil. Par ailleurs, nous avons démontré des LEDs blanche sans phosphore qui démontrent, pour la première fois, une efficacité quantique supérieure à 50% ainsi qu'une baisse d'efficacité négligeable jusqu'à ~ 2,000A/cm2 et des caractéristiques d'émissions très hautes et stables à température pièce. Celles-ci sont donc toutes désignées pour des applications d'illumination intelligentes et des écrans pleines couleurs. La croissance par épitaxie, la fabrication et la caractérisation des nanofils d'InN:Mg/i-InN/InN:Si axiaux sur des substrats de Si(111) de type n et démontré la première cellule solaire à base d'InN. Sous l'illumination d'un soleil (AM 1.5G), les dispositifs démontrent une densité de courant de ~ 14.4 mA/cm2 en court-circuit, un voltage de circuit ouvert de 0.14V, un facteur de remplissage de 34.0% et une efficacité de conversion d'énergie de 0.68%. Ce travail ouvre des portes excitantes pour des cellules solaires plein spectre de troisième génération à base de nanofils d'InGaN.
Miller, Eric Justin. "Influence of material properties on device design and performance in III-V nitride alloys /". Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2003. http://wwwlib.umi.com/cr/ucsd/fullcit?p3091322.
Texto completoJackson, Christine M. "Correlations of Electronic Interface States and Interface Chemistry on Dielectric/III Nitride Heterostructures for Device Applications". The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu15257361319909.
Texto completoGrowden, Tyler A. "III-V Tunneling Based Quantum Devices for High Frequency Applications". The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469199253.
Texto completoNamkoong, Gon. "Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications : impact of nucleation kinetics on material and device structure quality". Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/16426.
Texto completoJessen, Gregg Huascar. "Investigation and Characterization of AlGaN/GaN Device Structures and the Effects of Material Defects and Processing on Device Performance". Connect to this title online, 2002. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1038605384.
Texto completoTitle from first page of PDF file. Document formatted into pages; contains xxx,198 p.: ill. (some col.). Includes abstract and vita. Advisor: Leonard J. Brillson, Dept. of Electrical Engineering. Includes bibliographical references (p. 188-198).
Akyol, Fatih. "N-Polar III-Nitride Optoelectronic Devices". The Ohio State University, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=osu1307562902.
Texto completoBeach, Robert A. McGill T. C. "Column III nitride growth, characterization and devices /". Diss., Pasadena, Calif. : California Institute of Technology, 2001. http://resolver.caltech.edu/CaltechETD:etd-11212003-141821.
Texto completoTseng, Chun-Lung. "Development of III-V nitride optoelectronic devices". Thesis, University of Bath, 2003. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.275785.
Texto completoHung, Ting-Hsiang. "Novel High-k Dielectric Enhanced III-Nitride Devices". The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419.
Texto completoDahal, Rajendra Prasad. "Fabrication and characterization of III-nitride nanophotonic devices". Diss., Manhattan, Kan. : Kansas State University, 2009. http://hdl.handle.net/2097/2198.
Texto completoRen, Christopher Xiang. "Multi-microscopy characterisation of III-nitride devices and materials". Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/264158.
Texto completoLimb, Jae Boum. "Design, fabrication and characterization of III-nitride PN junction devices". Diss., Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-07022007-151130/.
Texto completoWilliam Doolittle, Committee Member ; Joy Laskar, Committee Member ; Russell Dupuis, Committee Chair ; David Citrin, Committee Member ; Srinivas Garimella, Committee Member.
Stepanov, Sergei. "MOCVD growth and characterisation of III-nitride semiconductors, heterostructures and devices". Thesis, University of Bath, 2003. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.275881.
Texto completoSudradjat, Faisal Firmansyah. "Terahertz optoelectronic devices based on intersubband transitions in III-nitride semiconductors". Thesis, Boston University, 2013. https://hdl.handle.net/2144/12855.
Texto completoThe terahertz (THz) spectral region, commonly defined as the frequency (wavelength) range between 0.3 and 10 THz (1 mm and 30 µm) has many important applications in the industrial, biomedical, and military sectors. However, due to a lack of practical semiconductor materials with adequately small bandgap energy, the development of THz light sources and photodetectors has so far been limited. In recent years, devices based on intersubband transitions between discrete energy states in quantum heterostructures have been under intense research and development to address this issue. Of particular promise in the THz range are quantum cascade lasers (QCLs) and quantum well infrared photodetectors (QWIPs), which utilize intersubband transitions in specially designed quantum well (QW) structures to emit light and generate photocurrent, respectively. This research work has focused on the development of THz light sources and photodetectors using intersubband transitions in GaN/A1GaN QvVs, whose basic materials properties allow for improved spectral coverage and high-temperature operation compared to existing semiconductor devices. To design the active region of QCLs and QWIPs based on inter-conduction-subband transitions in these materials, the necessary numerical tools have first been developed. Sequential tunneling, the key electronic transport mechanism ofintersubband light emitters, has then been demonstrated in GaN/A1GaN QC structures. Furthermore, we have measured promising THz electroluminescence spectra from the same devices through the use of lock-in step-scan Fourier transform infrared spectroscopy. In the area of photodetectors, we have developed a novel double-step QW design in order to overcome the material limitations presented by the intrinsic internal electric fields of GaN/A1GaN QWs. With this design approach, we have experimentally demonstrated the operation of a far infrared QWIP with a peak detection wavelength of 23 µm (13 THz frequency), which is the longest wavelength reported for this materials system.
Song, Di. "III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs) /". View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20SONG.
Texto completoShakya, Jagat B. "Micro/nano-photonic structures and devices of III-nitride wide band-gap semiconductors /". Search for this dissertation online, 2004. http://wwwlib.umi.com/cr/ksu/main.
Texto completoAthanasiou, Modestos. "Fabrication and characterisation of III-nitride based nanostructure devices using nanosphere lithography techniques". Thesis, University of Sheffield, 2015. http://etheses.whiterose.ac.uk/8893/.
Texto completoHodges, Christopher John. "An optical study of III-nitride semiconductor devices, their thermal properties and degradation mechanisms". Thesis, University of Bristol, 2014. http://hdl.handle.net/1983/5fde50ad-f01f-4be1-be04-3a658e79439f.
Texto completoWang, Ruonan. "Enhancement/depletion-mode HEMT technology for III-nitride mixed-signal and RF applications /". View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20WANG.
Texto completoZhang, Yun. "Development of III-nitride bipolar devices: avalanche photodiodes, laser diodes, and double-heterojunction bipolar transistors". Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42703.
Texto completoCho, Eunjung. "III-nitride metal organic vapor phase epitaxy growth and characterization and use in gas sensing devices". Aachen Shaker, 2008. http://d-nb.info/996578110/04.
Texto completoChoi, Suk. "Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition". Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45823.
Texto completoPomeroy, James Wayne. "A temperature and pressure dependent Raman scattering study of III-nitride, icosahedral boride semiconductors and their devices". Thesis, University of Bristol, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.431633.
Texto completoCho, Eunjung [Verfasser]. "III-Nitride Metal Organic Vapor Phase Epitaxy Growth and Characterization and Use in Gas Sensing Devices / Eunjung Cho". Aachen : Shaker, 2009. http://d-nb.info/1159834059/34.
Texto completoVenkatachalam, Anusha. "Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices". Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29669.
Texto completoCommittee Chair: Yoder, Douglas; Committee Member: Graham, Samuel; Committee Member: Allen, Janet; Committee Member: Klein, Benjamin; Committee Member: Voss, Paul. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Wille, Ada Verfasser], Andrei [Akademischer Betreuer] [Vescan y Rainer [Akademischer Betreuer] Waser. "Investigation of AlN/GaN superlattices and their application to group III nitride devices / Ada Wille ; Andrei Vescan, Rainer Waser". Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1130872599/34.
Texto completoReuters, Benjamin Verfasser], Andrei [Akademischer Betreuer] [Vescan y Ferdinand [Akademischer Betreuer] Scholz. "Polarization-optimized heterostructures with quaternary AlInGaN layers for novel group III nitride devices / Benjamin Reuters ; Andrei Vescan, Ferdinand Scholz". Aachen : Universitätsbibliothek der RWTH Aachen, 2016. http://d-nb.info/1129875652/34.
Texto completoWille, Ada [Verfasser], Andrei [Akademischer Betreuer] Vescan y Rainer [Akademischer Betreuer] Waser. "Investigation of AlN/GaN superlattices and their application to group III nitride devices / Ada Wille ; Andrei Vescan, Rainer Waser". Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1130872599/34.
Texto completoReuters, Benjamin [Verfasser], Andrei [Akademischer Betreuer] Vescan y Ferdinand [Akademischer Betreuer] Scholz. "Polarization-optimized heterostructures with quaternary AlInGaN layers for novel group III nitride devices / Benjamin Reuters ; Andrei Vescan, Ferdinand Scholz". Aachen : Universitätsbibliothek der RWTH Aachen, 2016. http://d-nb.info/1129875652/34.
Texto completoHan, Lu. "Light Management in Photovoltaic Devices and Nanostructure Engineering in Nitride-based Optoelectronic Devices". Case Western Reserve University School of Graduate Studies / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=case1486996393294605.
Texto completoShetty, Arjun. "Device Applications of Epitaxial III-Nitride Semiconductors". Thesis, 2015. http://etd.iisc.ac.in/handle/2005/3530.
Texto completoShetty, Arjun. "Device Applications of Epitaxial III-Nitride Semiconductors". Thesis, 2015. http://etd.iisc.ernet.in/2005/3530.
Texto completo"Structural Properties of III-Nitride Semiconductors". Doctoral diss., 2014. http://hdl.handle.net/2286/R.I.26873.
Texto completoDissertation/Thesis
Doctoral Dissertation Physics 2014
Yang, Chih-Yuan y 楊智淵. "Characterization of III-V Nitride Semiconductors Material and LED Device". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/97533179344137603503.
Texto completo長庚大學
光電工程研究所
94
This thesis concerned with the studies on the optical properties of AlGaN/GaN heterostructure and InGaN/InGaN multiple quantum wells, the silicon doping effect on InGaN/InGaN quantum wells. The content had three major parts. (1) Optical properties in AlGaN/GaN heterostructure We used Williamson-Hall plot to obtain the threading dislocation densities for different aluminum fraction of AlxGa1-xN epitaxial layers. As the aluminum fraction increased, the threading dislocation densities expanded. We found that higher aluminum fraction would lead to smaller Hall mobility. As the polarization induced sheet charge was stronger, the PL intensity of two dimensional electron gases (2DEG) peak was weaker. The PL energy separation between the 2DEG peak and the GaN FE emission decreased with increasing temperature. The result was attributed to the screening effect of electrons on the bending of the conduction band at the heterointerface. (2) Optical properties in InGaN/InGaN multiple quantum wells(MQW) We found that the degree of blue shift in temperature-depend photoluminescence (TDPL) was greater in higher indium composition samples. From T-x diagram, the higher indium composition samples had higher probability to prevail phase separation. Using Arrhenius plot in TDPL, we could confirm that higher indium samples had stronger carrier localization effect. Based on the two conjectures, the quantum dots-like might be formed in the in-rich regions. Thus, the higher indium composition samples had greater polarization field, which caused the variation of energy gap which was induced by screening effect greater as temperature increased. The reason of the obviously blue shift of the TDPL in higher indium composition could be obtained by the carrier localization effect or the polarization effect. (3) Current and optical properties in Si-doped InGaN/InGaN MQW Silicon doping in barriers reduced the mismatch between barriers and wells, and silicon doping in barriers could fill the defects or change the dislocation mobility. Therefore, Si-doped samples had reduced threading dislocation densities. By the calculated results of polarization field and PL spectra, we found that the enhancement of PL intensity and the blue shift of the PL spectra with increasing silicon doping concentrations were explained by a decrease in potential fluctuations and/or screening effect of the internal piezoelectric field. By comparing T-PL and current-depend electroluminescence, we found that the quantum well related signals in PL spectra weren’t the band-to-band emission, but the indium localized states induced by the potential fluctuations. According to the C-V measurement, we found that carriers were accumulating in the wells which were near surface because the width of depletion had changed by silicon doing in the barriers near substrate. The current properties showed that silicon doping could improve samples’ quality, reduce leakage current and turn-on voltage, and increase light efficiency.
GOSWAMI, LALIT. "FABRICATION OF III-NITRIDE BASED ENERGY EFFICIENT ULTRAVIOLET PHOTODETECTOR". Thesis, 2020. http://dspace.dtu.ac.in:8080/jspui/handle/repository/18154.
Texto completoLin, Hon-Way y 林弘偉. "Epitaxial Growth, Fundamental Properties, and Device Applications of III-Nitride Semiconductor Nanorods". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/71444067793267328465.
Texto completo國立清華大學
物理學系
99
本論文討論以在矽基板上利用分子束磊晶成長法應用於三族氮化物(氮化鎵、氮化銦鎵)奈米柱材料之成長。並對其結構以及光學性質做詳細的分析與討論,並以實際元件來說明此材料之發展潛力。 矽基板相較於其它基板(例如: 氧化鋁、碳化矽)擁有與價格便宜之優勢,適合大面積成長,且易與IC製程整合。利用分子束磊晶所成長出的三族氮化物奈米柱呈垂直於基板的排列,且每一奈米柱皆為無應力之單晶結構,依據螢光光譜量測,氮化鎵奈米柱具有激子的發光特性且有很好的發光效率。確定了氮化鎵奈米柱之優良特性後,我們利用此結構當作模板,並且成功地在上面成長出涵蓋全可見光(400 -700 nm)波段之氮化銦鎵奈米碟。相較於氮化銦鎵薄膜,奈米碟擁有發光參數容易調控,且在長波長範圍之發光強度減弱不如薄膜嚴重。利用這些特性,我們試著將各種不同發光波段之奈米碟依不同厚度與層數疊在一起,利用此概念,成長出不需要利用任何螢光粉輔助之白光發光二極體結構,對白光照明,提供了一個新的解決方法。
Ou, Jehn y 歐震. "Growths and Characterizations of Wide-Bandgap III-Antimonide and III-Nitride Epilayers and Their Device Structures". Thesis, 1999. http://ndltd.ncl.edu.tw/handle/74590427695931909661.
Texto completo國立交通大學
電子物理系
87
We have carried out systematic studies on the epitaxial growth of AlAs1-xSbx, GaN and InxGa1-xN compounds using metalorganic vapor phase epitaxy technique. Experimental data indicate that the solid composition of AlAsSb depends strongly on the input reactant flow rates and the growth temperature. A high Sb concentration of AlAsSb alloy can only be obtained at a V/III ratio close to 1, whereas too high the Sb flow rates and too low the V/III ratio will lead to the formation of Sb droplets and Al metal platelets, respectively. For AlAsSb prepared at high growth temperatures, the side reaction of TBAs, b-elimination, is believed to response for the result in a decrease of the As solid concentration. By employing a thermodynamic analysis, a novel phase diagram for AlAsSb with simpler solid-vapor distribution relationship was obtained, according to which the As solid concentration can be directly determined by the input As/Al mole flow rate ratio. The AlAs1-xSbx alloy was also used to fabricate two novel diodes, the enhanced InP Schottky diode and the In0.53Ga0.47As/AlAs0.44Sb0.56/In0.53Ga0.47As single barrier tunneling diode. By introducing AlAsSb into the conventional Schottky structure, the InP Schottky barrier height was improved greatly from 0.45eV to 0.76eV. For single-barrier tunneling diode, a negative differential resistance characteristic was successfully observed at 100 and 300K. A high peak-to-valley current ratio of 4.2 is obtained at 100K, which is the best value ever reported for such type of device. For GaN, the film quality appears to be very sensitive to the buffer layer property and the growth temperature. The optimized buffer layer thickness, temperature ramping rate and growth temperature are found to be around 100~300A, 75~100℃/min, and 1,000~1,050℃, respectively. A phase transition from hexagonal to cubic structure for GaN has been evidenced at a growth temperature around 750℃. The best quality of our GaN films in terms of FWHMs of x-ray and 300K-PL are as narrow as only 160 arcsec and 28meV, respectively. The corresponding electron mobility and carrier concentration also exhibit superior values of 330 cm^2/V and 1.1x10^17 cm^-3, respectively. Regarding to the InGaN growth, our experimental results indicate that the solid composition and characteristic of InGaN are determined not only by the growth temperature, but also by the TMGa and TMIn flow rates. The films with the good structural and optical properties can only be obtained at temperatures above 750℃. For the solid distribution, we found that too high the TMIn flow rate and too low the TMGa flow rate will both bring a decrease of In concentration solid, unfavorable to the high-In content InGaN growth. Besides, the thermodynamic analysis was also performed in our InGaN study. By introducing an empirical high-temperature factor in our modified InGaN growth model, we can successfully predict the solid-vapor distribution in InGaN and the appearance of In-droplets during growth. Based on thermodynamic arguments, the maximum allowed In solid concentration for a single phase InGaN is constrained primarily by the high temperature effect, such as In desorption, and the In saturation vapor pressure. By optimizing the growth conditions, we can obtain high quality InGaN epilayers with the narrow FWHMs of 150 arcsec and 92 meV for (0002) x-ray diffraction and 300K-PL peaks, respectively.
Chandrasekar, Hareesh. "Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives". Thesis, 2016. http://etd.iisc.ac.in/handle/2005/2740.
Texto completoChandrasekar, Hareesh. "Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives". Thesis, 2016. http://hdl.handle.net/2005/2740.
Texto completoChun-TaYu y 游俊達. "The Growth and Fabrication of High Efficiency III-Nitride-Based Optoelectronic Device by Metal-organic Chemical Vapor Deposition". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/20885070775511936988.
Texto completo國立成功大學
微電子工程研究所
103
Growth and fabrication of high efficiency GaN-based optoelectronic devices were successfully demonstrated in this dissertation. This dissertation proposed two directions to enhance the efficiency for fabrication of InGaN-based LEDs, include the methods of Mg-doped AlGaN/InGaN superlattice electron blocking layer and digital InN/GaN growth in InGaN well. We also proposed two methods to improve the efficiency of InGaN-based solar cells by introducing ex-situ AlN nucleation layer and Si-doped AlGaN barriers. Firstly, the operating voltage, light output power, and efficiency droops of GaN-based light emitting diodes (LEDs) were improved by introducing Mg-doped AlGaN/InGaN superlattice (SL) electron blocking layer (EBL). The thicker InGaN layers of AlGaN/InGaN SL EBL could have a larger effective electron potential height and lower effective hole potential height than that of AlGaN EBL. This thicker InGaN layer could prevent electron leakage into the p-region of LEDs and improve hole injection efficiency to achieve a higher light output power and less efficiency droops with the injection current. The low lateral resistivity of Mg-doped AlGaN/InGaN SL would have superior current spreading at high current injection. Secondly, thick InGaN wells of LEDs with high crystal quality can be prepared by using digital InN/GaN growth for the InGaN wells. The thickness of high crystal quality InGaN wells can be sustained with In% of 17.6% more than 7 nm. The 60 mA output power of LEDs with thick InN/GaN alternative growth InGaN wells indicate an enhancement of at least 28.9% compared with that of LEDs with conventional InGaN wells. However, LEDs with thick InN/GaN alternative growth InGaN wells have larger efficiency droops than LEDs with conventional InGaN wells. Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN wells (generated by digital InN/GaN growth from temperature-dependent integrated photoluminescence intensity) is larger than the activation energy (25 meV) of conventionally grown thin InGaN wells. Moreover, thick InGaN wells with digitally grown InN/GaN exhibit a smaller value (the degree of localization effects) of 19 meV than that of conventionally grown thin InGaN wells (23 meV). Thirdly, GaN solar cells (SCs) with ex-situ AlN nucleation layer are examined in this study. GaN with sputtered ex-situ AlN nucleation layer has mixed-type dislocation density at approximately one order less than that of GaN with in-situ GaN nucleation layer. The reduction of dislocation density by the sputtered AlN nucleation layer could suppress the reverse leakage current and the recombination forward current in low forward voltage range of SCs, and then can increase Jsc and Voc of the SCs. 1-sun η% of SCs with ex-situ AlN nucleation (1.92%) showed an enhancement of 27.2% compared with that of conventional SC at 1.51%. Furthermore, the 100-sun η% of SCs with ex-situ AlN nucleation (1.99%) showed 18.5% improvement compared with that of conventional SC (1.68%). Finnaly, the Voc, FF%, and η% of GaN-based SCs can be improved by replacing an initial 2-pair GaN/InGaN with 2-pair AlGaN/InGaN multilayer. The IPCE of SCs with 2-pair AlGaN/InGaN multilayer is higher than that with GaN/InGaN at 2 V for wavelengths in range of 365 nm to 420 nm. From the results of the numerical simulation, we found that the FF% improvement of the SCs with the 2-pair AlGaN/InGaN multilayer should be attributed to the photo-generated carrier recombination rate suppression near the bias of the Voc. The 1-sun η of SCs with Si-doped Al0.10GaN barriers (1.86%) showed 27.4% enhancement compared with that with Si-doped GaN barriers (1.46%).
Beach, Robert Andrew. "Column III nitride growth, characterization and devices". Thesis, 2001. https://thesis.library.caltech.edu/4621/1/Beach_ra_2001.pdf.
Texto completoSweeney, Paul M. "Piezoelectricity and indium segregation in III-nitride heterostructure devices". 2005. http://wwwlib.umi.com/dissertations/fullcit/3185344.
Texto completoTitle from PDF title page (viewed on Feb. 24, 2006) Available through UMI ProQuest Digital Dissertations. Thesis adviser: Alexander N. Cartwright.
"Polarization Effects in Group III-Nitride Materials and Devices". Doctoral diss., 2012. http://hdl.handle.net/2286/R.I.14643.
Texto completoDissertation/Thesis
Ph.D. Physics 2012
Prabaswara, Aditya. "Study of III-nitride Nanowire Growth and Devices on Unconventional Substrates". Diss., 2019. http://hdl.handle.net/10754/656923.
Texto completo