Literatura académica sobre el tema "III-NITRIDE DEVICE"
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Artículos de revistas sobre el tema "III-NITRIDE DEVICE"
Jamal-Eddine, Zane, Yuewei Zhang y Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics". International Journal of High Speed Electronics and Systems 28, n.º 01n02 (marzo de 2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.
Texto completoMuthuraj, Vineeta R., Caroline E. Reilly, Thomas Mates, Shuji Nakamura, Steven P. DenBaars y Stacia Keller. "Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition". Applied Physics Letters 122, n.º 14 (3 de abril de 2023): 142103. http://dx.doi.org/10.1063/5.0142941.
Texto completoHangleiter, Andreas. "III–V Nitrides: A New Age for Optoelectronics". MRS Bulletin 28, n.º 5 (mayo de 2003): 350–53. http://dx.doi.org/10.1557/mrs2003.99.
Texto completoBaten, Md Zunaid, Shamiul Alam, Bejoy Sikder y Ahmedullah Aziz. "III-Nitride Light-Emitting Devices". Photonics 8, n.º 10 (7 de octubre de 2021): 430. http://dx.doi.org/10.3390/photonics8100430.
Texto completoFu, Wai Yuen y Hoi Wai Choi. "Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes". Journal of Applied Physics 132, n.º 6 (14 de agosto de 2022): 060903. http://dx.doi.org/10.1063/5.0089750.
Texto completoZolper, J. C. y R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors". MRS Bulletin 22, n.º 2 (febrero de 1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.
Texto completoFu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications". ECS Meeting Abstracts MA2022-02, n.º 34 (9 de octubre de 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.
Texto completoZhang, Shuai, Bingcheng Zhu, Zheng Shi, Jialei Yuan, Yuan Jiang, Xiangfei Shen, Wei Cai, Yongchao Yang y Yongjin Wang. "Spatial signal correlation from an III-nitride synaptic device". Superlattices and Microstructures 110 (octubre de 2017): 296–304. http://dx.doi.org/10.1016/j.spmi.2017.08.028.
Texto completoGaevski, Mikhail, Jianyu Deng, Grigory Simin y Remis Gaska. "500 °C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (1 de enero de 2014): 000084–89. http://dx.doi.org/10.4071/hitec-tp16.
Texto completoIslam, Md Sherajul, Md Arafat Hossain, Sakib Mohammed Muhtadi y Ashraful G. Bhuiyan. "Transport Properties of Insulated Gate AlInN/InN Heterojunction Field Effect Transistor". Advanced Materials Research 403-408 (noviembre de 2011): 64–69. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.64.
Texto completoTesis sobre el tema "III-NITRIDE DEVICE"
Monika, Sadia K. "III- Nitride Enhancement Mode Device". The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1483535296785214.
Texto completoLiu, Jie. "Channel engineering of III-nitride HEMTs for enhanced device performance /". View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ECED%202006%20LIUJ.
Texto completoEiting, Christopher James. "Growth of III-V nitride materials by MOCVD for device applications /". Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Texto completoFeng, Zhihong. "Enhanced device performance of III-nitride HEMTs on sapphire substrates by MOCVD /". View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202006%20FENG.
Texto completoNath, Digbijoy N. "Advanced polarization engineering of III-nitride heterostructures towards high-speed device applications". The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1376927078.
Texto completoNguyen, Hieu. "Molecular beam epitaxial growth, characterization and device applications of III-Nitride nanowire heterostructures". Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=107905.
Texto completoRécemment, les hétérostructures à base de nitride et de groupe III ont fait l'objet de recherches intensives. Grâce à la relaxation latérale effective du stress, de telles hétérostructures d'échelle nanométrique peuvent être déposés sur du Silicium ou d'autres substrats. Celles-ci démontrent une réduction dramatique des dislocations et des champs de polarisations comparativement à leurs contreparties planes. Cette dissertation rapporte l'accomplissement d'une nouvelle classe de matériau nanométrique, soit des hétérostructures III-nitride incluant InGaN/GaN point dans fils ainsi que des nanofils d'InN presque sans défauts sur du Silicium. De plus, nous avons développé une nouvelle génération de dispositifs à base de nanofils, incluant des diodes émettrices de lumière (LEDs) à efficacité ultra haute et spectre visible complet ainsi que des cellules solaires sur une gaufre de Silicium. Nous avons identifié 2 mécanismes majeurs, incluant le faible transport des trous et le surplus d'électrons, qui limitent sérieusement la performance des LEDs à base de nanofils de GaN. Avec l'ajout de certaines techniques spéciales de modulation de type p, et une couche bloquante d'électrons faite de AlGaN dans la région active de la LED point dans fil. Par ailleurs, nous avons démontré des LEDs blanche sans phosphore qui démontrent, pour la première fois, une efficacité quantique supérieure à 50% ainsi qu'une baisse d'efficacité négligeable jusqu'à ~ 2,000A/cm2 et des caractéristiques d'émissions très hautes et stables à température pièce. Celles-ci sont donc toutes désignées pour des applications d'illumination intelligentes et des écrans pleines couleurs. La croissance par épitaxie, la fabrication et la caractérisation des nanofils d'InN:Mg/i-InN/InN:Si axiaux sur des substrats de Si(111) de type n et démontré la première cellule solaire à base d'InN. Sous l'illumination d'un soleil (AM 1.5G), les dispositifs démontrent une densité de courant de ~ 14.4 mA/cm2 en court-circuit, un voltage de circuit ouvert de 0.14V, un facteur de remplissage de 34.0% et une efficacité de conversion d'énergie de 0.68%. Ce travail ouvre des portes excitantes pour des cellules solaires plein spectre de troisième génération à base de nanofils d'InGaN.
Miller, Eric Justin. "Influence of material properties on device design and performance in III-V nitride alloys /". Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2003. http://wwwlib.umi.com/cr/ucsd/fullcit?p3091322.
Texto completoJackson, Christine M. "Correlations of Electronic Interface States and Interface Chemistry on Dielectric/III Nitride Heterostructures for Device Applications". The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu15257361319909.
Texto completoGrowden, Tyler A. "III-V Tunneling Based Quantum Devices for High Frequency Applications". The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469199253.
Texto completoNamkoong, Gon. "Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications : impact of nucleation kinetics on material and device structure quality". Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/16426.
Texto completoLibros sobre el tema "III-NITRIDE DEVICE"
Chuan, Feng Zhe, ed. III-nitride devices and nanoengineering. London: Imperial College Press, 2008.
Buscar texto completoT, Yu E. y Manasreh Mahmoud Omar, eds. III-V nitride semiconductors: Applications & devices. New York: Taylor & Francis, 2003.
Buscar texto completoSeong, Tae-Yeon. III-Nitride Based Light Emitting Diodes and Applications. Dordrecht: Springer Netherlands, 2013.
Buscar texto completoMorkoç, Hadis. Gallium nitride materials and devices III: 21-24 January 2008, San Jose, California, USA. Editado por Society of Photo-optical Instrumentation Engineers. Bellingham, Wash: SPIE, 2008.
Buscar texto completoKurt, Gaskill D., Brandt Charles D, Nemanich R. J y Materials Research Society Meeting, eds. III-Nitride, SiC, and diamond materials for electronic devices: Symposium held April, 1996, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1996.
Buscar texto completoSymposium on III-Nitride Based Semiconductor Electronic and Optical Devices (2001 Washington, D.C.). III-nitride based semiconductor electronics and optical devices: And, thirty-fourth state-of-the-art-program on compound semiconductors (SOTAPOCS XXXIV) : proceedings of the international symposia. Editado por Ren F, Electrochemical Society Meeting y State-of-the-Art Program on Compound Semiconductors (34th : 2001 : Washington, D.C.). Pennington, NJ: Electrochemical society, 2001.
Buscar texto completoIII-Nitride Electronic Devices. Elsevier, 2019. http://dx.doi.org/10.1016/s0080-8784(19)x0004-6.
Texto completoFeng, Zhe Chuan. III-Nitride Materials Devices. World Scientific Publishing Co Pte Ltd, 2017.
Buscar texto completoChu, Rongming y Keisuke Shinohara. III-Nitride Electronic Devices. Elsevier Science & Technology Books, 2019.
Buscar texto completoChu, Rongming y Keisuke Shinohara. III-Nitride Electronic Devices. Elsevier Science & Technology, 2019.
Buscar texto completoCapítulos de libros sobre el tema "III-NITRIDE DEVICE"
Zhou, Shengjun y Sheng Liu. "Device Reliability and Measurement". En III-Nitride LEDs, 217–39. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0436-3_6.
Texto completoFan, Shizhao, Songrui Zhao, Faqrul A. Chowdhury, Renjie Wang y Zetian Mi. "Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications". En Handbook of GaN Semiconductor Materials and Devices, 243–83. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-7.
Texto completoMukherjee, Moumita y D. N. Bose. "Large-Signal Analysis of III-V Nitride Based DD-Transit Time Device: A New Source for THz Power Generation". En Physics of Semiconductor Devices, 107–11. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_26.
Texto completoMukherjee, Moumita. "Large Signal Physical Operation of a III–V Nitride Based Double Velocity Transit Time Device: A Potential Source For THz Imaging". En Physics of Semiconductor Devices, 225–28. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_56.
Texto completoMaiti, Chinmay K. "III-Nitride Flexible Electronic Devices". En Fabless Semiconductor Manufacturing, 211–47. New York: Jenny Stanford Publishing, 2022. http://dx.doi.org/10.1201/9781003314974-6.
Texto completoBisi, Davide, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso y Enrico Zanoni. "Reliability in III-Nitride Devices". En Handbook of GaN Semiconductor Materials and Devices, 367–430. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-12.
Texto completoBinari, Steven C. y Harry B. Dietrich. "III-V Nitride Electronic Devices". En GaN and Related Materials, 509–34. London: CRC Press, 2021. http://dx.doi.org/10.1201/9781003211082-16.
Texto completoShen, Bo, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu et al. "III-Nitride Materials and Characterization". En Handbook of GaN Semiconductor Materials and Devices, 3–52. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-1.
Texto completoLin, Chien-Chung, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-chung (Henry) Kuo, Wei-Chih Lai y Jinn-Kong Sheu. "III–V Nitride-Based Photodetection". En Handbook of GaN Semiconductor Materials and Devices, 597–613. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-19.
Texto completoLin, Chien-Chung, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-chung Kuo, Wei-Chih Lai y Jinn-Kong Sheu. "III–V Nitride-Based Photodetection". En Handbook of GaN Semiconductor Materials and Devices, 597–613. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-25.
Texto completoActas de conferencias sobre el tema "III-NITRIDE DEVICE"
Toledo, Nikholas G., Samantha C. Cruz, Carl J. Neufeld, Jordan R. Lang, Michael A. Scarpulla, Trevor Buehl, Arthur C. Gossard, Steven P. Denbaars, James S. Speck y Umesh K. Mishra. "Integrated non-III-nitride/III-nitride tandem solar cell". En 2011 69th Annual Device Research Conference (DRC). IEEE, 2011. http://dx.doi.org/10.1109/drc.2011.5994525.
Texto completoFeezell, Daniel, Arman Rashidi, Morteza Monavarian, Andrew Aragon, Mohsen Nami, Saadat Mishkat-Ul-Masabih y Ashwin Rishinaramangalam. "III-Nitride High-Speed Optoelectronics". En 2019 Device Research Conference (DRC). IEEE, 2019. http://dx.doi.org/10.1109/drc46940.2019.9046403.
Texto completoRuden, P. P. "Materials-theory-based device modeling for III-nitride devices". En Optoelectronics '99 - Integrated Optoelectronic Devices, editado por Gail J. Brown y Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344555.
Texto completoSimin, G., Z.-j. Yang, A. Koudymov, V. Adivarahan, J. Yang y M. Khan. "III-Nitride Field-Effect Transistors with Capacitively-Coupled Contacts". En 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305139.
Texto completoShahedipour-Sandvik, F., M. Tungare, J. Leathersich, P. Suvarna, R. Tompkins y K. A. Jones. "III-Nitride devices on Si: Challenges and opportunities". En 2011 International Semiconductor Device Research Symposium (ISDRS 2011). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135260.
Texto completoNikishin, Sergey y Mark Holtz. "Growth of III-Nitride quantum structures for device applications". En 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO). IEEE, 2010. http://dx.doi.org/10.1109/nano.2010.5698066.
Texto completoWang, Ping, Ding Wang, Shubham Mondal y Zetian Mi. "Fully Epitaxial Ferroelectric III-Nitride Semiconductors: From Materials to Devices". En 2022 Device Research Conference (DRC). IEEE, 2022. http://dx.doi.org/10.1109/drc55272.2022.9855651.
Texto completoYang, Z., A. Kudymov, X. Hu, J. Yang, G. Simin, M. Shur y R. Gaska. "Sub-0.1 dB loss III-Nitride MOSHFET RF Switches". En 2008 66th Annual Device Research Conference (DRC). IEEE, 2008. http://dx.doi.org/10.1109/drc.2008.4800845.
Texto completoHung, Ting-Hsiang, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Sanyam Bajaj y Siddharth Rajan. "Lateral energy band engineering of Al2O3/III-nitride interfaces". En 2014 72nd Annual Device Research Conference (DRC). IEEE, 2014. http://dx.doi.org/10.1109/drc.2014.6872332.
Texto completoYang, Z. C., D. N. Nath, Y. Zhang y S. Rajan. "N-polar III-nitride tunneling hot electron transfer amplifier". En 2014 72nd Annual Device Research Conference (DRC). IEEE, 2014. http://dx.doi.org/10.1109/drc.2014.6872353.
Texto completoInformes sobre el tema "III-NITRIDE DEVICE"
Kurtz, Steven Ross, Terry W. Hargett, Darwin Keith Serkland, Karen Elizabeth Waldrip, Normand Arthur Modine, John Frederick Klem, Eric Daniel Jones, Michael Joseph Cich, Andrew Alan Allerman y Gregory Merwin Peake. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report. Office of Scientific and Technical Information (OSTI), diciembre de 2003. http://dx.doi.org/10.2172/918384.
Texto completoDavis, R. F., M. Harris, S. Halpern, S. Siebert y M. Patel. Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency. Fort Belvoir, VA: Defense Technical Information Center, abril de 2001. http://dx.doi.org/10.21236/ada389624.
Texto completoDavis, Robert F. y Kevin J. Linthicum. Materials Processing and Device Development to Achieve Integration of Low Defect Density III Nitride Based Radio Frequency. Fort Belvoir, VA: Defense Technical Information Center, octubre de 2000. http://dx.doi.org/10.21236/ada383629.
Texto completoPark, Gil Han y Jin-Joo Song. (DURIP 99) MOCVD Growth With In-Situ Characterization and Femto-second Two-Color Laser Experiments for Widegap III-Nitride Materials and Device Development. Fort Belvoir, VA: Defense Technical Information Center, diciembre de 2001. http://dx.doi.org/10.21236/ada397733.
Texto completoMcCartney, Martha R. y David J. Smith. Failure Mechanisms for III-Nitride HEMT Devices. Fort Belvoir, VA: Defense Technical Information Center, noviembre de 2013. http://dx.doi.org/10.21236/ada601810.
Texto completoJiang, Hongxing y Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, marzo de 2002. http://dx.doi.org/10.21236/ada399578.
Texto completoJiang, Hongxing y Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, agosto de 2001. http://dx.doi.org/10.21236/ada390015.
Texto completoJiang, Hongxing y Jingyu Lin. UV/Blue III-Nitride Micro-Cavity Photonic Devices. Fort Belvoir, VA: Defense Technical Information Center, julio de 2001. http://dx.doi.org/10.21236/ada390174.
Texto completoStroscio, Michael A. y Mitra Dutta. III-nitride and Related Wuertzite Quantum-dot-based Optoelectronic Devices with Enhanced Performance. Fort Belvoir, VA: Defense Technical Information Center, enero de 2009. http://dx.doi.org/10.21236/ada495368.
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