Artículos de revistas sobre el tema "IGBT power modules"
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Flores, David, Salvador Hidalgo y Jesús Urresti. "New generation of 3.3kV IGBTs with monolitically integrated voltage and current sensors". Facta universitatis - series: Electronics and Energetics 28, n.º 2 (2015): 213–21. http://dx.doi.org/10.2298/fuee1502213f.
Texto completoFu, Xiao Jin, Chun Lan Que, Shuai Zhang, En Xing Yang y Hang Ye. "The Design of Parallel IGBT Modular for Modularized Wind Power Converter". Applied Mechanics and Materials 734 (febrero de 2015): 873–76. http://dx.doi.org/10.4028/www.scientific.net/amm.734.873.
Texto completoLi, Cui, Yao Sheng Li, Jun Xu Liu, Hua Qiang Shao, Zhong yuan Chen y Jin Yuan Li. "Research on performance parameter degradation of high voltage and high power IGBT module in power cycling test". Journal of Physics: Conference Series 2290, n.º 1 (1 de junio de 2022): 012041. http://dx.doi.org/10.1088/1742-6596/2290/1/012041.
Texto completoWang, Yan Gang, Dinesh Chamund, Shi Ping Li, Kevin Wu, Steve Jones y Gary Liu. "Lifetime Prediction for Power IGBT Modules in Metro Traction Systems". Advanced Materials Research 846-847 (noviembre de 2013): 724–31. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.724.
Texto completoLevchuk, Svetlana, Monika Poebl y Gerhard Mitic. "Diamond Composites for Power Electronics Application". Advanced Materials Research 59 (diciembre de 2008): 143–47. http://dx.doi.org/10.4028/www.scientific.net/amr.59.143.
Texto completoZheng, Qing Yuan, Min You Chen, Bing Gao y Nan Jiang. "Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model". Advanced Materials Research 986-987 (julio de 2014): 823–27. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.823.
Texto completoWu, Yi Bo, Guo You Liu, Ning Hua Xu y Ze Chun Dou. "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density". Applied Mechanics and Materials 303-306 (febrero de 2013): 1902–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1902.
Texto completoShen, Bing y Yifa Sheng. "Research on junction temperature monitoring technology of IGBT modules". Journal of Physics: Conference Series 2378, n.º 1 (1 de diciembre de 2022): 012043. http://dx.doi.org/10.1088/1742-6596/2378/1/012043.
Texto completoSkibinski, G., D. Braun, D. Kirschnik y R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules". Materials Science Forum 527-529 (octubre de 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.
Texto completoJo, Kim, Cho y Lee. "Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules". Electronics 8, n.º 10 (7 de octubre de 2019): 1127. http://dx.doi.org/10.3390/electronics8101127.
Texto completoWang, Lei, Mingchao Zhou, Zhonghao Dongye, Yanbei Sha y Jingcao Chen. "A Condition Evaluation Simplified Method for Traction Converter Power Module Based on Operating Interval Segmentation". Sensors 23, n.º 5 (24 de febrero de 2023): 2537. http://dx.doi.org/10.3390/s23052537.
Texto completoCova, P., M. Ciappa, G. Franceschini, P. Malberti y F. Fantini. "Thermal characterization of IGBT power modules". Microelectronics Reliability 37, n.º 10-11 (octubre de 1997): 1731–34. http://dx.doi.org/10.1016/s0026-2714(97)00150-9.
Texto completoWang, Chenyuan, Yigang He, Chuankun Wang, Lie Li y Xiaoxin Wu. "Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration". Electronics 9, n.º 10 (23 de septiembre de 2020): 1559. http://dx.doi.org/10.3390/electronics9101559.
Texto completoFu, Shancan, Guoliang Wang y Feng Xiao. "Degradation Behavior of High Power Semiconductor Modules by Low-Temperature Sintering Technology". Journal of Physics: Conference Series 2370, n.º 1 (1 de noviembre de 2022): 012012. http://dx.doi.org/10.1088/1742-6596/2370/1/012012.
Texto completoSharma, Yogesh, P. Mumby-Croft, L. Ngwendson, M. Packwood, L. Coulbeck, M. Birkett, C. Kong, H. Jiang, Y. Wang y I. Deviny. "6.5 kV Si/SiC Hybrid Power Module Technology". Materials Science Forum 963 (julio de 2019): 859–63. http://dx.doi.org/10.4028/www.scientific.net/msf.963.859.
Texto completoAbdalgader, Ibrahim A. S., Sinan Kivrak y Tolga Özer. "Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications". Micromachines 13, n.º 2 (17 de febrero de 2022): 313. http://dx.doi.org/10.3390/mi13020313.
Texto completoLi, Bin, Ke Qing Xiong, Yi Sun y Bing Qi. "Safety P-Cycle Protection Mechanism for Smart Power Device". Advanced Materials Research 804 (septiembre de 2013): 228–32. http://dx.doi.org/10.4028/www.scientific.net/amr.804.228.
Texto completoParker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash y Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair". Materials Science Forum 717-720 (mayo de 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.
Texto completoLiu, Xingliang, Guiyun Tian, Yu Chen, Haoze Luo, Jian Zhang y Wuhua Li. "Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach". Energies 13, n.º 10 (21 de mayo de 2020): 2613. http://dx.doi.org/10.3390/en13102613.
Texto completoPark, C., M. J. Mauger, T. Damle, J. Huh, S. Steinhoff y L. Graber. "Cryogenic Power Electronics: Press-Pack IGBT Modules". IOP Conference Series: Materials Science and Engineering 756 (30 de junio de 2020): 012009. http://dx.doi.org/10.1088/1757-899x/756/1/012009.
Texto completoBoettcher, Lars, S. Karaszkiewicz, D. Manessis y A. Ostmann. "Development of Embedded High Power Electronics Modules for Automotive Applications". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (1 de enero de 2013): 001717–43. http://dx.doi.org/10.4071/2013dpc-wp35.
Texto completoImaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami y Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules". Materials Science Forum 527-529 (octubre de 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.
Texto completoMorozumi, A., K. Yamada, T. Miyasaka, S. Sumi y Y. Seki. "Reliability of power cycling for igbt power semiconductor modules". IEEE Transactions on Industry Applications 39, n.º 3 (mayo de 2003): 665–71. http://dx.doi.org/10.1109/tia.2003.810661.
Texto completoMelnikov, V., O. Talipov y Yu Kibartene. "EVALUATING THE POSSIBILITY OF APPLYING CONTROLLED COMPENSATION SYSTEMS TO IMPROVE EFFICIENCY IN ELECTRIC GRIDS". Bulletin of Toraighyrov University. Energetics series, n.º 2021.3 (11 de septiembre de 2021): 83–92. http://dx.doi.org/10.48081/jbmz50037.
Texto completoZhang, Jingxuan, Hexu Sun, Zexian Sun, Yan Dong y Weichao Dong. "Open-Circuit Fault Diagnosis of Wind Power Converter Using Variational Mode Decomposition, Trend Feature Analysis and Deep Belief Network". Applied Sciences 10, n.º 6 (21 de marzo de 2020): 2146. http://dx.doi.org/10.3390/app10062146.
Texto completoAgunov, A. V., A. T. Burkov, V. G. Zhemchugov y K. K. Stepanova. "Energy efficiency of power electronics converters in traction power supply networks at voltage increase". Journal of Physics: Conference Series 2131, n.º 4 (1 de diciembre de 2021): 042094. http://dx.doi.org/10.1088/1742-6596/2131/4/042094.
Texto completoAbbate, Carmine y Roberto Di Folco. "High Frequency Behavior of High Power IGBT Modules". Universal Journal of Electrical and Electronic Engineering 3, n.º 1 (enero de 2015): 17–23. http://dx.doi.org/10.13189/ujeee.2015.030104.
Texto completoAzar, R., F. Udrea, M. DeSilva, G. Amaratunga, W. T. Ng, F. Dawson, W. Findlay y P. Waind. "Advanced SPICE Modeling of Large Power IGBT Modules". IEEE Transactions on Industry Applications 40, n.º 3 (mayo de 2004): 710–16. http://dx.doi.org/10.1109/tia.2004.827456.
Texto completoLuo, Dan, Minyou Chen, Wei Lai, Hongjian Xia, Zhenyu Deng, Zhi Wang y Kai Yu. "A Fault Detection Method of IGBT Bond Wire Fatigue Based on the Reduction of Measured Heatsink Thermal Resistance". Electronics 11, n.º 7 (24 de marzo de 2022): 1021. http://dx.doi.org/10.3390/electronics11071021.
Texto completoKrainyukov, Alexander y Valery Kutev. "Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation". Transport and Telecommunication Journal 16, n.º 3 (1 de septiembre de 2015): 217–23. http://dx.doi.org/10.1515/ttj-2015-0020.
Texto completoChen, Ming, An Hu, Yong Tang y Bo Wang. "SABER-Based Simulation for Compact Dynamic Electro-Thermal Modeling Analysis of Power Electronic Devices". Advanced Materials Research 291-294 (julio de 2011): 1704–8. http://dx.doi.org/10.4028/www.scientific.net/amr.291-294.1704.
Texto completoLuo, Bing Yang, Yi Min Mo, Wen Lu Zhang y Si Ning Liu. "Study Temperature and Humidity Influence on High-Power IGBT". Applied Mechanics and Materials 325-326 (junio de 2013): 499–502. http://dx.doi.org/10.4028/www.scientific.net/amm.325-326.499.
Texto completoBöttcher, Lars, S. Karaszkiewicz, D. Manessis, Eckart Hoene y A. Ostmann. "Next Generation High Power Electronic Modules Based on Embedded Power Semiconductors". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (1 de enero de 2014): 000694–719. http://dx.doi.org/10.4071/2014dpc-tp12.
Texto completoZhou, Shengqi, Luowei Zhou, Suncheng Liu, Pengju Sun, Quanming Luo y Junke Wu. "The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module". Active and Passive Electronic Components 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/309789.
Texto completoGhimire, Pramod, Angel Ruiz de Vega, Szymon Beczkowski, Bjorn Rannestad, Stig Munk-Nielsen y Paul Thogersen. "Improving Power Converter Reliability: Online Monitoring of High-Power IGBT Modules". IEEE Industrial Electronics Magazine 8, n.º 3 (septiembre de 2014): 40–50. http://dx.doi.org/10.1109/mie.2014.2311829.
Texto completoChen, Nan, Filippo Chimento, Muhammad Nawaz y Liwei Wang. "Dynamic Characterization of Parallel-Connected High-Power IGBT Modules". IEEE Transactions on Industry Applications 51, n.º 1 (enero de 2015): 539–46. http://dx.doi.org/10.1109/tia.2014.2330075.
Texto completoAbbate, C., G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone y R. Manzo. "The robustness of series-connected high power IGBT modules". Microelectronics Reliability 47, n.º 9-11 (septiembre de 2007): 1746–50. http://dx.doi.org/10.1016/j.microrel.2007.07.036.
Texto completoQian, Cheng, Amir Mirza Gheitaghy, Jiajie Fan, Hongyu Tang, Bo Sun, Huaiyu Ye y Guoqi Zhang. "Thermal Management on IGBT Power Electronic Devices and Modules". IEEE Access 6 (2018): 12868–84. http://dx.doi.org/10.1109/access.2018.2793300.
Texto completoLefranc, G., T. Licht, H. J. Schultz, R. Beinert y G. Mitic. "Reliability testing of high-power multi-chip IGBT modules". Microelectronics Reliability 40, n.º 8-10 (agosto de 2000): 1659–63. http://dx.doi.org/10.1016/s0026-2714(00)00185-2.
Texto completoBELYAEV, A. V. y R. N. POLYAKOV. "ANALYSIS OF THE RELIABLE STATE OF POWER ELECTRONICS BY CONTROL OF THERMAL ELECTRIC PARAMETERS". Fundamental and Applied Problems of Engineering and Technology 2 (2021): 172–77. http://dx.doi.org/10.33979/2073-7408-2021-346-2-172-177.
Texto completoScofield, James D., Joseph Neil Merrett, Jim Richmond, Anant K. Agarwal y Scott Leslie. "Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules". Materials Science Forum 645-648 (abril de 2010): 1119–22. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1119.
Texto completoLuo, Dan, Minyou Chen, Wei Lai, Hongjian Xia, Xueni Ding y Zhenyu Deng. "A Study on the Effect of Bond Wires Lift-Off on IGBT Thermal Resistance Measurement". Electronics 10, n.º 2 (15 de enero de 2021): 194. http://dx.doi.org/10.3390/electronics10020194.
Texto completoHasan, Md Nazmul, Timothy Polom, Dominik Holzmann, Perla Malagó, Alfred Binder y Ali Roshanghias. "Evaluating Cu Printed Interconnects “Sinterconnects” versus Wire Bonds for Switching Converters". Electronics 11, n.º 9 (25 de abril de 2022): 1373. http://dx.doi.org/10.3390/electronics11091373.
Texto completoHasan, Md Nazmul, Timothy Polom, Dominik Holzmann, Perla Malagó, Alfred Binder y Ali Roshanghias. "Evaluating Cu Printed Interconnects “Sinterconnects” versus Wire Bonds for Switching Converters". Electronics 11, n.º 9 (25 de abril de 2022): 1373. http://dx.doi.org/10.3390/electronics11091373.
Texto completoYonezawa, Yoshiyuki, Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa, T. Deguchi, Tomohisa Kato, Shinsuke Harada et al. "Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs". Materials Science Forum 821-823 (junio de 2015): 842–46. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.842.
Texto completoLoganathan, P. y P. Selvam. "Amalgam Illogical Controller Design Using Amended Moth System for Heat Reduction in Insulated Gate Bipolar Transistor". International Journal of Mathematics and Computers in Simulation 16 (25 de junio de 2022): 67–75. http://dx.doi.org/10.46300/9102.2022.16.11.
Texto completoDenk, Marco y Mark-M. Bakran. "Online Junction Temperature Cycle Recording of an IGBT Power Module in a Hybrid Car". Advances in Power Electronics 2015 (2 de marzo de 2015): 1–14. http://dx.doi.org/10.1155/2015/652389.
Texto completoWani, Faisal, Udai Shipurkar, Jianning Dong y Henk Polinder. "Thermal Cycling in Converter IGBT Modules with Different Cooling Systems in Pitch- and Active Stall-Controlled Tidal Turbines". Energies 14, n.º 20 (9 de octubre de 2021): 6457. http://dx.doi.org/10.3390/en14206457.
Texto completoWani, Faisal, Udai Shipurkar, Jianning Dong, Henk Polinder, Antonio Jarquin-Laguna, Kaswar Mostafa y George Lavidas. "Lifetime Analysis of IGBT Power Modules in Passively Cooled Tidal Turbine Converters". Energies 13, n.º 8 (12 de abril de 2020): 1875. http://dx.doi.org/10.3390/en13081875.
Texto completoPeng, Xi, Sheng Yin y Yingqin Zou. "Research on dynamic current sharing method of parallel connected IGBT modules for NPC three level converters". Journal of Physics: Conference Series 2113, n.º 1 (1 de noviembre de 2021): 012055. http://dx.doi.org/10.1088/1742-6596/2113/1/012055.
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