Literatura académica sobre el tema "IGBT power modules"
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Artículos de revistas sobre el tema "IGBT power modules"
Flores, David, Salvador Hidalgo y Jesús Urresti. "New generation of 3.3kV IGBTs with monolitically integrated voltage and current sensors". Facta universitatis - series: Electronics and Energetics 28, n.º 2 (2015): 213–21. http://dx.doi.org/10.2298/fuee1502213f.
Texto completoFu, Xiao Jin, Chun Lan Que, Shuai Zhang, En Xing Yang y Hang Ye. "The Design of Parallel IGBT Modular for Modularized Wind Power Converter". Applied Mechanics and Materials 734 (febrero de 2015): 873–76. http://dx.doi.org/10.4028/www.scientific.net/amm.734.873.
Texto completoLi, Cui, Yao Sheng Li, Jun Xu Liu, Hua Qiang Shao, Zhong yuan Chen y Jin Yuan Li. "Research on performance parameter degradation of high voltage and high power IGBT module in power cycling test". Journal of Physics: Conference Series 2290, n.º 1 (1 de junio de 2022): 012041. http://dx.doi.org/10.1088/1742-6596/2290/1/012041.
Texto completoWang, Yan Gang, Dinesh Chamund, Shi Ping Li, Kevin Wu, Steve Jones y Gary Liu. "Lifetime Prediction for Power IGBT Modules in Metro Traction Systems". Advanced Materials Research 846-847 (noviembre de 2013): 724–31. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.724.
Texto completoLevchuk, Svetlana, Monika Poebl y Gerhard Mitic. "Diamond Composites for Power Electronics Application". Advanced Materials Research 59 (diciembre de 2008): 143–47. http://dx.doi.org/10.4028/www.scientific.net/amr.59.143.
Texto completoZheng, Qing Yuan, Min You Chen, Bing Gao y Nan Jiang. "Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model". Advanced Materials Research 986-987 (julio de 2014): 823–27. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.823.
Texto completoWu, Yi Bo, Guo You Liu, Ning Hua Xu y Ze Chun Dou. "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density". Applied Mechanics and Materials 303-306 (febrero de 2013): 1902–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1902.
Texto completoShen, Bing y Yifa Sheng. "Research on junction temperature monitoring technology of IGBT modules". Journal of Physics: Conference Series 2378, n.º 1 (1 de diciembre de 2022): 012043. http://dx.doi.org/10.1088/1742-6596/2378/1/012043.
Texto completoSkibinski, G., D. Braun, D. Kirschnik y R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules". Materials Science Forum 527-529 (octubre de 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.
Texto completoJo, Kim, Cho y Lee. "Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules". Electronics 8, n.º 10 (7 de octubre de 2019): 1127. http://dx.doi.org/10.3390/electronics8101127.
Texto completoTesis sobre el tema "IGBT power modules"
Wang, Yalan. "Controlled switching of high power IGBT/diode modules". Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613291.
Texto completoSignorello, Concetta. "Reduction of Switching Losses in IGBT Power Modules". Doctoral thesis, Università di Catania, 2015. http://hdl.handle.net/10761/4056.
Texto completoJoyce, John Charles. "Current sharing and redistribution in high power IGBT modules". Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621350.
Texto completoCiappa, Mauro P. M. "Some reliability aspects of IGBT modules for high-power applications /". Zürich, 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13790.
Texto completoXiao, Di. "On Modern IGBT Modules: Characterization, Reliability and Failure Mechanisms". Thesis, Norwegian University of Science and Technology, Department of Electrical Power Engineering, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-10932.
Texto completoThe increased demand of offshore power conversion systems is driven by newly initiated offshore projects for wind farms and oil production. Because of long distances to shore and inaccessibility of the equipment long repair times must be expected. At the same time the offshore environment is extremely harsh. Thus, high reliability is required for the converters and it is important to have good knowledge of the switching devices. This thesis investigates switching characteristics and losses of commercially available IGBT modules to be used for this application. It focuses on switching time and switching energy losses depending on gate resistance, current and voltage levels, operation temperatures, and show differences between several devices of the same type. Some test show how device characteristics and losses when the device has been exposed to stress over a certain period.
Ji, Bing. "In-situ health monitoring of IGBT power modules in EV applications". Thesis, University of Newcastle Upon Tyne, 2012. http://hdl.handle.net/10443/1474.
Texto completoYaqub, Imran. "Investigation into stable failure to short circuit in IGBT power modules". Thesis, University of Nottingham, 2015. http://eprints.nottingham.ac.uk/30305/.
Texto completoSmet, Vanessa. "Aging and failure modes of IGBT power modules undergoing power cycling in high temperature environments". Thesis, Montpellier 2, 2010. http://www.theses.fr/2010MON20075/document.
Texto completoThis thesis is dedicated to reliability investigations led on three-phase 200~A~--~600~V IGBT power modules, designed for building drive inverters for hybrid or electric automotive traction applications. The objective was to evaluate the durability of the studied modules when they withstand power cycling in high temperature environments, and especially their resistance to thermo-mechanical fatigue. Two complementary approaches were considered: accelerated aging experiments and numerical modeling.A series of power cycling tests was carried out over a large range of temperature profiles, defined by the ambient temperature and IGBT junction temperature excursion. These quantities are used as thermal stress acceleration factors. Those experiments were led in realistic electrical conditions (PWM control scheme). They aimed at identifying the failure modes of the target devices, assessing the impact of the acceleration factors on their aging process, and evaluating the suitability of standard aging indicators as damage precursors in such harsh loading conditions. Besides, to better understand the failure mechanisms governing the fatigue life of the modules assembly, a thermo-mechanical modeling focusing on solder joints was built. Our simulation efforts concentrated on the appraisal of constitutive modeling effects on solder joints lifetime estimation. Numerical analysis of the assembly response to power cycling in similar operating conditions as practiced in experiments were performed. Behavior laws were then compared on stress, plastic strain, and strain energy density developed within the joints
Azar, Ramy. "A novel electro-thermal IGBT model for the design and analysis of large power IGBT modules in the spice environment". Thesis, University of Cambridge, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.619985.
Texto completoBelmehdi, Yassine. "Contribution à l'identification de nouveaux indicateurs de défaillance des modules de puissance à IGBT". Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14258/document.
Texto completoPower electronics has a role increasingly growing up in transport:electric and hybrid vehicles, trains and aircraft. For these applications, security is a critical point, thus the reliability of the power assembly must be optimized. The knowledge of time to failure is very important information for the designers of these systems. Inthis context, an early failure indicator would predict system failuresbefore it becomes effective. In this thesis, we focused on the electromechanical characterization of power transistors: MOSFET and IGBT. Based on these results this electromechanical characterization should help us in the longer term, to highlight an early failure indicator of the power assembly
Libros sobre el tema "IGBT power modules"
Yun, Chan-Su. Static and dynamic thermal behavior of IGBT power modules. Konstanz: Hartung-Gorre, 2001.
Buscar texto completoCiappa, Mauro. Some reliability aspects of IGBT modules for high-power applications. Konstanz: Hartung-Gorre, 2001.
Buscar texto completoRectifier, International. Power interface products: HEXFET and IGBT muli-chip power SIP modules; designer's manual and product databook. El Segundo, CA: International Rectifier, 1992.
Buscar texto completoCapítulos de libros sobre el tema "IGBT power modules"
Bharathsimha Reddy, A., S. N. Mahato y Nilanjan Tewari. "Static and Dynamic Analysis of IGBT Power Modules for Low and High-Power Range Electric Drives". En Recent Advances in Power Electronics and Drives, 119–36. Singapore: Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-19-7728-2_9.
Texto completoZhou, Mingchao, Lei Wang, Mengxue Guo, Yanbei Sha, Qiuli Liu y Lijun Diao. "Design and Research of Accelerated Aging Test Platform for IGBT Power Module". En Proceedings of the 5th International Conference on Electrical Engineering and Information Technologies for Rail Transportation (EITRT) 2021, 179–86. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-9913-9_21.
Texto completoFan, Zhigang, Dechun Zhu, Quan Jin y Xiaozhou Shang. "Research on Flow Operation Scheduling for Flexible Production of IGBT Power Module Assemble". En Proceedings of the Eighth Asia International Symposium on Mechatronics, 1190–200. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-1309-9_115.
Texto completoSefsaf, H., B. Nadji y Y. Yakhelef. "Characterization and Simulation of the Power IGBT Module Used in VFD for Drilling Applications". En Lecture Notes in Networks and Systems, 665–71. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21216-1_67.
Texto completo"Power IGBT Modules". En Insulated Gate Bipolar Transistor IGBT Theory and Design, 465–98. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2005. http://dx.doi.org/10.1002/047172291x.ch9.
Texto completo"Manufacturing of Power IGBT Modules". En Power Electronic Modules. CRC Press, 2004. http://dx.doi.org/10.1201/9780203507308.ch4.
Texto completoLu, Zhiyu, Maksim G. Popov, Elena V. Zakharova, Mikhail V. Gushin y Dionizio Paschoareli Jr. "A Research Method of IGBT Non-Stationary Mode for Power and Electrical Equipment Control". En Advances in Transdisciplinary Engineering. IOS Press, 2022. http://dx.doi.org/10.3233/atde220486.
Texto completo"Implementation of a Temperature Measurement Method for Condition Monitoring of IGBT Converter Modules in Online-Mode". En Power Electrical Systems, 179–200. De Gruyter Oldenbourg, 2018. http://dx.doi.org/10.1515/9783110470529-011.
Texto completoMakhloufi, Abderahman, Younes Aoues, Abdelkhalak El Hami, Bouchaib Radi, Philippe Pougnet y David Delaux. "Study on the Thermomechanical Fatigue of Electronic Power Modules for Traction Applications in Electric and Hybrid Vehicles (IGBT)". En Reliability of High-Power Mechatronic Systems 1, 213–51. Elsevier, 2017. http://dx.doi.org/10.1016/b978-1-78548-260-1.50010-8.
Texto completoYang, Fei, Shengting Kuai y Zhe Wang. "Study on Water Cooling Performance of IGBT Module in Wind Power Converter". En Advances in Transdisciplinary Engineering. IOS Press, 2021. http://dx.doi.org/10.3233/atde210262.
Texto completoActas de conferencias sobre el tema "IGBT power modules"
Jacob, P. "Reliability testing and analysis of IGBT power semiconductor modules". En IEE Colloquium on `IGBT Propulsion Drives'. IEE, 1995. http://dx.doi.org/10.1049/ic:19950531.
Texto completoNewcombe, D. R., Dinesh Cha, C. Bailey y H. Lu. "Reliability metrics for IGBT power modules". En High Density Packaging (ICEPT-HDP). IEEE, 2010. http://dx.doi.org/10.1109/icept.2010.5582869.
Texto completoGutierrez, Erick, Kevin Lin, Douglas DeVoto y Patrick McCluskey. "Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules". En ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6470.
Texto completoJin, Qichen, Johannes K. Mendizabal, Nenad Miljkovic y Arijit Banerjee. "In Situ Power Loss Estimation of IGBT Power Modules". En 2021 IEEE International Electric Machines & Drives Conference (IEMDC). IEEE, 2021. http://dx.doi.org/10.1109/iemdc47953.2021.9449570.
Texto completoMedaule, D. "Latest technology improvements of Mitsubishi IGBT modules". En IEE Colloquium on New Developments in Power Semiconductor Devices. IEE, 1996. http://dx.doi.org/10.1049/ic:19960862.
Texto completoIncau, Bogdan Ioan, Ionut Trintis y Stig Munk-Nielsen. "Switching speed limitations of high power IGBT modules". En 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE, 2015. http://dx.doi.org/10.1109/epe.2015.7309369.
Texto completoCzubay, John, Sung Chung y Prakash H. Desai. "IGBT Power Modules Evaluation for GM Electrified Vehicles". En WCX World Congress Experience. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2018. http://dx.doi.org/10.4271/2018-01-0460.
Texto completoIura, Shinichi, John F. Donlon y Eckhard Thal. "Design approach of newly developed 3.3kV IGBT modules". En 2007 European Conference on Power Electronics and Applications. IEEE, 2007. http://dx.doi.org/10.1109/epe.2007.4417346.
Texto completoZhu, Nan, Dehong Xu, Xingyao Zhang, Min Chen, Seiki Igarashi y Tatsuhiko Fujihira. "Switching noise suppression for hybrid IGBT modules". En 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE 2015-ECCE Asia). IEEE, 2015. http://dx.doi.org/10.1109/icpe.2015.7167878.
Texto completoQi, Tao, Jeff Graham y Jian Sun. "Characterization of IGBT modules for system EMI simulation". En 2010 IEEE Applied Power Electronics Conference and Exposition - APEC 2010. IEEE, 2010. http://dx.doi.org/10.1109/apec.2010.5433545.
Texto completoInformes sobre el tema "IGBT power modules"
Ovrebo, Gregory K. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. Fort Belvoir, VA: Defense Technical Information Center, febrero de 2015. http://dx.doi.org/10.21236/ada616757.
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