Literatura académica sobre el tema "I-III-VI2 semiconductors"
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Artículos de revistas sobre el tema "I-III-VI2 semiconductors"
Matsushita, Hiroaki, Saburo Endo y Taizo Irie. "Thermodynamical Properties of I-III-VI2-Group Chalcopyrite Semiconductors". Japanese Journal of Applied Physics 30, Part 1, No. 6 (15 de junio de 1991): 1181–85. http://dx.doi.org/10.1143/jjap.30.1181.
Texto completoXue, D., K. Betzler y H. Hesse. "Dielectric properties of I-III-VI2-type chalcopyrite semiconductors". Physical Review B 62, n.º 20 (15 de noviembre de 2000): 13546–51. http://dx.doi.org/10.1103/physrevb.62.13546.
Texto completoBaşol, Bülent M. "I–III–VI2 compound semiconductors for solar cell applications". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, n.º 4 (julio de 1992): 2006–12. http://dx.doi.org/10.1116/1.578017.
Texto completoJakhmola, Priyanka R., Garima Agarwal, Prafulla K. Jha y Satya Prakash Bhatnagar. "Nanorod Formation of Copper Indium (di) Selenide Nanorod Synthesize by Solvothermal Route". Advanced Materials Research 1047 (octubre de 2014): 107–11. http://dx.doi.org/10.4028/www.scientific.net/amr.1047.107.
Texto completoBalakrishnan, K., B. Vengatesan y P. Ramasamy. "Growth and characterization of some I–III–VI2 compound semiconductors". Journal of Materials Science 29, n.º 7 (abril de 1994): 1879–83. http://dx.doi.org/10.1007/bf00351308.
Texto completoOmer, Mustafa S., Hameed M. Ahmad y Suran M. Mamand. "Temperature Dependence of Lattice Thermal Conductivity for some I-III-VI2 Group Compound Semiconductors". Journal of Zankoy Sulaimani - Part A 7, n.º 1 (20 de agosto de 2003): 7–15. http://dx.doi.org/10.17656/jzs.10117.
Texto completoUeng, H. Y. y H. L. Hwang. "Defect structure of non-stoichiometric Cu-I-III-VI2 chalcopyrite semiconductors". Materials Science and Engineering: B 12, n.º 3 (febrero de 1992): 261–67. http://dx.doi.org/10.1016/0921-5107(92)90297-m.
Texto completoNomura, Shigetaka, Saburo Endo y Taizo Irie. "Method of materials design for I-III-VI2 chalcopyrite-type mixed crystal semiconductors". Electronics and Communications in Japan (Part II: Electronics) 71, n.º 4 (1988): 101–13. http://dx.doi.org/10.1002/ecjb.4420710412.
Texto completoOhmer, Melvin C. y Ravindra Pandey. "Emergence of Chalcopyrites as Nonlinear Optical Materials". MRS Bulletin 23, n.º 7 (julio de 1998): 16–22. http://dx.doi.org/10.1557/s0883769400029031.
Texto completoJohn, Rita. "Band Gap Engineering in Bulk and Nano Semiconductors". MRS Proceedings 1454 (2012): 233–38. http://dx.doi.org/10.1557/opl.2012.1445.
Texto completoTesis sobre el tema "I-III-VI2 semiconductors"
Bhattacharyya, Biswajit. "A Study of Photophysics and Photochemistry of I-III-VI2 Nanocrystals". Thesis, 2018. https://etd.iisc.ac.in/handle/2005/4325.
Texto completoDST, IISc, ISRO
Tsai, Hung Wei y 蔡鴻偉. "Electrochemical Syntheses of V-VI, I-III-VI2, I2-II-IV-VI4 Chalcogenide Semiconductors". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/83311317775138925721.
Texto completo國立清華大學
材料科學工程學系
104
Electrochemistry studies the electrons transfer of the chemical moieties in the electrolytic solution, thus, inert materials which only supply or withdraw electrons such as pyrolytic graphite and platinum are commonly used as the electrodes in the electroanalyses. However, in most of the cases, the materials we utilized for the working electrode are not as nonreactive as pyrolytic graphite or platinum, and will take place the chemical reactions during supplying or withdrawing electrons. We focused on investigating the chemical reaction between the chemical moieties in electrolytic solution and the working electrode materials including V-VI semiconductor of Bi2Te3, I-III-VI2 semiconductor of Cu(In,Ga)Se2, and I2-II-IV-VI4 semiconductor of Cu2ZnSnS4 and hence developed four kinds of techniques, as mentioned as follows: (i) We demonstrate an one-step electrolysis process to directly form Bi2Te3 nanosheet arrays (NSAs) on the surface of Bi2Te3 bulk with controllable spacing distance and depth by tuning the applied bias and duration. The single sheet of NSAs reveals that the average thickness and electrical resistivity of single crystalline Bi2Te3 in composition are 399.8 nm and 137.34 μΩ⋅m, respectively. The formation mechanism and the selection rules of NSAs have been proposed. A 1.12 % energy conversion efficiency of quantum-dot-sensitized solar cells with Bi2Te3 NSAs as counter electrode has been demonstrated. (ii) We propose a gas-solid transformation mechanism to synthesize surfactant-free tellurium nanowires with average diameter under 20 nm at room temperature by one-step electrochemical method. The tellurium nanowires grow along the [001] direction due to the unique spiral chains in crystal structure and show an enhanced Raman scattering effect, a broad absorption band over the range of 350-750 nm and an emission band over the range of 400-700 nm in photoluminescence spectrum. Besides, the tellurium nanowires are directly applied as p-type dopant to dope graphene and result in a right shift of Dirac point in graphene field-effect transistor. Finally, we apply these tellurium nanowires as a supercapacitor electrode and demonstrate their promising capacitive properties. (iii) We introduce a surface modification on CIGSe thin film by electrochemical treatment. After this electrochemical passivation treatment, a lower oxygen concentration near the CIGSe surface was detected by XPS analysis. Temperature-dependent J-V characteristics of CIGSe solar cells reveal that the interface recombination can be suppressed and an improved rollover condition can be achieved. As a result, the defects near the CIGSe surface can be passivated by electrolysis and the performance of CIGSe solar cells can be enhanced from 4.7 % to 7.7 %. (iv) We demonstrate a one-step hybrid electrodeposition method which combines electrophoretic and electroplated electrodeposition to synthesize CZTS thin film. To our best condition, the composition of the as-deposited CZTS thin film can be achieved to be ~25.33 at%, ~19.44 at%, ~14.56 at%, and ~40.67 at% for Cu, Zn, Sn, and S elements, respectively. After the 550°C sulfurization for 1 hour in a sulfur vapor atmosphere, three diffraction peaks corresponding to the (112), (220), and (312) planes of CZTS could be detected in XRD spectra. The A Raman-active vibration modes at 287, 338 cm-1 and B Raman-active vibration modes at 374 cm-1 could be identified as kesterite CZTS in Raman spectra. An appropriate optical property of 1.48 eV band gap is achieved for photovoltaic application. Through careful analysis and optimization, we are able to demonstrate CZTS solar cells with the VOC, JSC, FF and η of 350 mV, 3.90 mA/cm2, 0.43 and 0.59 %, respectively.
Anumol, S. "A Study of Synthesis and Optoelectronics of Copper Iron Chalcogenide Nanocrystals". Thesis, 2020. https://etd.iisc.ac.in/handle/2005/4984.
Texto completoTomar, Nitin Kumar. "Studies on the synthesis and applications of I-III-VI2 semiconductor nanocrystals". Thesis, 2019. https://etd.iisc.ac.in/handle/2005/5122.
Texto completoCapítulos de libros sobre el tema "I-III-VI2 semiconductors"
Madelung, Otfried. "I-III-VI2 compounds". En Semiconductors: Data Handbook, 289–328. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18865-7_7.
Texto completoUeng, H. Y. y H. L. Wang. "Defect structure of the nonstoichiometric Cu-I-III-VI2 chalcopyrite semiconductors". En Non-Stoichiometry in Semiconductors, 69–79. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-444-89355-0.50013-2.
Texto completoLoferski, Joseph J. "Stoichiometric effects on the properties of Cu based chalcopyrite I-III-VI2 semiconductor thin films". En Non-Stoichiometry in Semiconductors, 257–68. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-444-89355-0.50037-5.
Texto completoKluge, O. y H. Krautscheid. "Single-Source Precursors for I–III–VI2 Semiconductor Materials". En Reference Module in Chemistry, Molecular Sciences and Chemical Engineering. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-12-409547-2.11684-1.
Texto completoActas de conferencias sobre el tema "I-III-VI2 semiconductors"
BODNAR, I. V., V. S. GURIN, A. P. MOLOCHKO, N. P. SOLOVEJ, K. V. YUMASHEV y P. V. PROKOSHIN. "STRUCTURE AND OPTICAL PROPERTIES OF I-III-VI2 NANOPARTICLES SEMICONDUCTORS IN A GLASS SILICATE MATRIX". En Reviews and Short Notes to Nanomeeting '99. WORLD SCIENTIFIC, 1999. http://dx.doi.org/10.1142/9789812817990_0043.
Texto completoKukimoto, Hiroshi. "Overview - Blue-Green Semiconductor LED/Laser Work in Japan". En Compact Blue-Green Lasers. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.thc2.
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