Artículos de revistas sobre el tema "High temperature semiconductors"
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TREW, R. J. y M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 06, n.º 01 (marzo de 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Texto completoPalmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics". MRS Bulletin 28, n.º 10 (octubre de 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.
Texto completoMa, Xi Ying. "Study of the Electrical Properties of Monolayer MoS2 Semiconductor". Advanced Materials Research 651 (enero de 2013): 193–97. http://dx.doi.org/10.4028/www.scientific.net/amr.651.193.
Texto completoWESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS". SPIN 03, n.º 04 (diciembre de 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
Texto completoDezaki, Hikari, Meng Long Jing, Sundararajan Balasekaran, Tadao Tanabe y Yutaka Oyama. "Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors". Key Engineering Materials 500 (enero de 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.500.66.
Texto completoGuyenot, M., M. Reinold, Y. Maniar y M. Rittner. "Advanced wire bonding for high reliability and high temperature applications". International Symposium on Microelectronics 2016, n.º 1 (1 de octubre de 2016): 000214–18. http://dx.doi.org/10.4071/isom-2016-wa51.
Texto completoZhao, Youyang, Charles Rinzler y Antoine Allanore. "Molten Semiconductors for High Temperature Thermoelectricity". ECS Journal of Solid State Science and Technology 6, n.º 3 (5 de diciembre de 2016): N3010—N3016. http://dx.doi.org/10.1149/2.0031703jss.
Texto completoChen, Sheng. "Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors". Highlights in Science, Engineering and Technology 81 (26 de enero de 2024): 286–90. http://dx.doi.org/10.54097/26qm0041.
Texto completoKappert, Holger, Sebastian Braun, Norbert Kordas, Stefan Dreiner y Rainer Kokozinski. "High Temperature GaN Gate Driver in SOI CMOS Technology". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (1 de enero de 2016): 000112–15. http://dx.doi.org/10.4071/2016-hitec-112.
Texto completoTournier, Dominique, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Herve Morel y Dominique Planson. "Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications". Advanced Materials Research 324 (agosto de 2011): 46–51. http://dx.doi.org/10.4028/www.scientific.net/amr.324.46.
Texto completoGumyusenge, Aristide y Jianguo Mei. "High Temperature Organic Electronics". MRS Advances 5, n.º 10 (2020): 505–13. http://dx.doi.org/10.1557/adv.2020.31.
Texto completoPrikhod’ko, A. V. "High-Temperature Superconductivity in Chalcogenide Vitreous Semiconductors". Semiconductors 35, n.º 6 (junio de 2001): 677. http://dx.doi.org/10.1134/1.1379402.
Texto completoNagaev, E. L. "High-temperature resistivity of degenerate ferromagnetic semiconductors". Physics Letters A 255, n.º 4-6 (mayo de 1999): 336–42. http://dx.doi.org/10.1016/s0375-9601(99)00188-7.
Texto completoRuddy, Frank H., Laurent Ottaviani, Abdallah Lyoussi, Christophe Destouches, Olivier Palais y Christelle Reynard-Carette. "Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments". EPJ Web of Conferences 253 (2021): 11003. http://dx.doi.org/10.1051/epjconf/202125311003.
Texto completoWang, Haidi, Qingqing Feng, Xingxing Li y Jinlong Yang. "High-Throughput Computational Screening for Bipolar Magnetic Semiconductors". Research 2022 (15 de marzo de 2022): 1–8. http://dx.doi.org/10.34133/2022/9857631.
Texto completoZaizen, Shohei, Kyohei Asami, Takashi Furukawa, Takeshi Hatta, Tsubasa Nakamura, Takashi Sakugawa y Takahisa Ueno. "The Development of a Compact Pulsed Power Supply with Semiconductor Series Connection". Electronics 12, n.º 21 (4 de noviembre de 2023): 4541. http://dx.doi.org/10.3390/electronics12214541.
Texto completoHan, Da-Gyeong, Dong-Hwan Lee y Jeong-Won Yoon. "Optimization of TLPS Bonding Process and Joint Property using Ni-Sn Paste for High Temperature Power Module Applications". Journal of Welding and Joining 42, n.º 2 (30 de abril de 2024): 165–73. http://dx.doi.org/10.5781/jwj.2024.42.2.3.
Texto completoHuang, Chengxi, Junsheng Feng, Jian Zhou, Hongjun Xiang, Kaiming Deng y Erjun Kan. "Ultra-High-Temperature Ferromagnetism in Intrinsic Tetrahedral Semiconductors". Journal of the American Chemical Society 141, n.º 31 (16 de julio de 2019): 12413–18. http://dx.doi.org/10.1021/jacs.9b06452.
Texto completoBonanni, Alberta y Tomasz Dietl. "A story of high-temperature ferromagnetism in semiconductors". Chem. Soc. Rev. 39, n.º 2 (2010): 528–39. http://dx.doi.org/10.1039/b905352m.
Texto completoChaves, Andrey y David Neilson. "Two-dimensional semiconductors host high-temperature exotic state". Nature 574, n.º 7776 (2 de octubre de 2019): 39–40. http://dx.doi.org/10.1038/d41586-019-02906-9.
Texto completoGraham, Mike J. "Modern Analytical Techniques in High Temperature Oxidation and Corrosion". Materials Science Forum 522-523 (agosto de 2006): 61–68. http://dx.doi.org/10.4028/www.scientific.net/msf.522-523.61.
Texto completoLu, Zhizhong, Menglin Jiang, Jieshi Huang, Xinlei Zhou, Kejie Li, Yue Zheng, Wenkai Jiang, Tao Zhang, Hangbing Yan y Huan Xia. "Study on NO2 gas sensitivity of metal phthalocyanine enhanced by graphene quantum dots". Journal of Physics: Conference Series 2369, n.º 1 (1 de noviembre de 2022): 012083. http://dx.doi.org/10.1088/1742-6596/2369/1/012083.
Texto completoGumyusenge, Aristide, Dung T. Tran, Xuyi Luo, Gregory M. Pitch, Yan Zhao, Kaelon A. Jenkins, Tim J. Dunn, Alexander L. Ayzner, Brett M. Savoie y Jianguo Mei. "Semiconducting polymer blends that exhibit stable charge transport at high temperatures". Science 362, n.º 6419 (6 de diciembre de 2018): 1131–34. http://dx.doi.org/10.1126/science.aau0759.
Texto completoKim, Jong-Woo, Seong-Geon Park, Min Kyu Yang y Byeong-Kwon Ju. "Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors". Electronics 11, n.º 19 (28 de septiembre de 2022): 3094. http://dx.doi.org/10.3390/electronics11193094.
Texto completoGulyamov, G., U. I. Erkaboev y N. Yu. Sharibaev. "The De Haas–Van Alphen effect at high temperatures and in low magnetic fields in semiconductors". Modern Physics Letters B 30, n.º 07 (20 de marzo de 2016): 1650077. http://dx.doi.org/10.1142/s0217984916500779.
Texto completoLostetter, Alexander B., J. Hornberger, B. McPherson, J. Bourne, R. Shaw, E. Cilio, W. Cilio et al. "High Temperature Silicon Carbide Power Modules for High Performance Systems". Materials Science Forum 717-720 (mayo de 2012): 1219–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1219.
Texto completoHarada, T., S. Ito y A. Tsukazaki. "Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation". Science Advances 5, n.º 10 (octubre de 2019): eaax5733. http://dx.doi.org/10.1126/sciadv.aax5733.
Texto completoPavlidis, Georges, Muhammad Jamil y Bivek Bista. "(Invited) Sub-Bandgap Thermoreflectance Imaging of Ultra-Wide Bandgap Semiconductors". ECS Meeting Abstracts MA2023-01, n.º 32 (28 de agosto de 2023): 1822. http://dx.doi.org/10.1149/ma2023-01321822mtgabs.
Texto completoWang, Baron, Andrea S. Chen y Randy H. Y. Lo. "Characteristics of Organic-Based Thermal Interface Materials Suitable for High Temperature Operation". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, HiTen (1 de julio de 2019): 000041–44. http://dx.doi.org/10.4071/2380-4491.2019.hiten.000041.
Texto completoArkin, Michael, Jeff Watson, Michael Siu y Michael Cusack. "Precision Analog Signal Conditioning Semiconductors for Operation in Very High Temperature Environments". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (1 de enero de 2013): 000139–51. http://dx.doi.org/10.4071/hiten-ta17.
Texto completoFurnival, Benjamin J. D., Sandip K. Roy, Nicolas G. Wright y Alton B. Horsfall. "Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics". Materials Science Forum 740-742 (enero de 2013): 837–40. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.837.
Texto completoQi, Siyuan, Chris Powley, Maria Mirgkizoudi, Adele Pliscott y Peter Collier. "Evaluation of High Temperature Joining Technologies for Semiconductor Die Attach". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, HiTEN (1 de julio de 2017): 000177–92. http://dx.doi.org/10.4071/2380-4491.2017.hiten.177.
Texto completoHuang, Luying, Fenghua Liu, Jiachen Bao, Xiaoman Li y Weiping Wu. "High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing". Materials 17, n.º 6 (19 de marzo de 2024): 1395. http://dx.doi.org/10.3390/ma17061395.
Texto completoChen, Yu, S. W. Fan y P. Xu. "Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives". Applied Physics Letters 121, n.º 25 (19 de diciembre de 2022): 252102. http://dx.doi.org/10.1063/5.0125543.
Texto completoNeudeck, P. G., R. S. Okojie y Liang-Yu Chen. "High-temperature electronics - a role for wide bandgap semiconductors?" Proceedings of the IEEE 90, n.º 6 (junio de 2002): 1065–76. http://dx.doi.org/10.1109/jproc.2002.1021571.
Texto completoKuroda, Shinji, Nozomi Nishizawa, Kôki Takita, Masanori Mitome, Yoshio Bando, Krzysztof Osuch y Tomasz Dietl. "Origin and control of high-temperature ferromagnetism in semiconductors". Nature Materials 6, n.º 6 (21 de mayo de 2007): 440–46. http://dx.doi.org/10.1038/nmat1910.
Texto completoArciszewska, M., A. Mycielski, C. Testelin, C. Rigaux y A. Mauger. "High-temperature magnetic susceptibility ofCd1−xFexTe diluted magnetic semiconductors". Physical Review B 45, n.º 15 (15 de abril de 1992): 8746–48. http://dx.doi.org/10.1103/physrevb.45.8746.
Texto completoZhang, Wenxu, Zhishuo Huang, Wanli Zhang y Yanrong Li. "Two-dimensional semiconductors with possible high room temperature mobility". Nano Research 7, n.º 12 (3 de septiembre de 2014): 1731–37. http://dx.doi.org/10.1007/s12274-014-0532-x.
Texto completoWang, Yaqi, Huasheng Sun, Shihai Wu, Ang Li, Yi Wan, Erjun Kan y Chengxi Huang. "Prediction of high-temperature ferromagnetic semiconductors in tetrahedral superlattices". Science China Materials 67, n.º 4 (20 de marzo de 2024): 1225–30. http://dx.doi.org/10.1007/s40843-023-2863-2.
Texto completoZhan, Tianzhuo, Mao Xu, Zhi Cao, Chong Zheng, Hiroki Kurita, Fumio Narita, Yen-Ju Wu et al. "Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review". Micromachines 14, n.º 11 (8 de noviembre de 2023): 2076. http://dx.doi.org/10.3390/mi14112076.
Texto completoShur, Michael. "(Invited) Ultrawide Bandgap Transistors for High Temperature and Radiation Hard Applications". ECS Meeting Abstracts MA2022-02, n.º 37 (9 de octubre de 2022): 1348. http://dx.doi.org/10.1149/ma2022-02371348mtgabs.
Texto completoKizilyalli, Isik C., Olga Blum Spahn y Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future". ECS Meeting Abstracts MA2022-02, n.º 37 (9 de octubre de 2022): 1344. http://dx.doi.org/10.1149/ma2022-02371344mtgabs.
Texto completoWang, M., R. A. Marshall, K. W. Edmonds, A. W. Rushforth, R. P. Campion y B. L. Gallagher. "Determining Curie temperatures in dilute ferromagnetic semiconductors: High Curie temperature (Ga,Mn)As". Applied Physics Letters 104, n.º 13 (31 de marzo de 2014): 132406. http://dx.doi.org/10.1063/1.4870521.
Texto completoMonobe, Hirosato, Masaomi Kimoto y Yo Shimizu. "Influence of Temperature Variation on Field Effect Transistor Properties Using a Solution-Processed Liquid Crystalline Semiconductor, 8TNAT8". Journal of Nanoscience and Nanotechnology 16, n.º 4 (1 de abril de 2016): 3277–81. http://dx.doi.org/10.1166/jnn.2016.12299.
Texto completoHöhne, Jens, Matthias Bühler, Theo Hertrich y Uwe Hess. "Cryodetectors for High Resolution X-Ray Spectroscopy". Microscopy and Microanalysis 6, S2 (agosto de 2000): 740–41. http://dx.doi.org/10.1017/s1431927600036199.
Texto completoKucukgok, B., Q. He, A. Carlson, A. G. Melton, I. T. Ferguson y N. Lu. "Investigation of Wide Bandgap Semiconductors for Thermoelectric Applications". MRS Proceedings 1490 (2013): 161–66. http://dx.doi.org/10.1557/opl.2013.26.
Texto completoOstapchuk, Mikhail, Dmitry Shishov, Daniil Shevtsov y Sergey Zanegin. "Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures". Inventions 7, n.º 4 (18 de octubre de 2022): 96. http://dx.doi.org/10.3390/inventions7040096.
Texto completoRaju, Krishna Murti. "High temperature elastic anharmonicity in lanthanum mono-chalcogenides". Canadian Journal of Physics 89, n.º 7 (julio de 2011): 817–24. http://dx.doi.org/10.1139/p11-062.
Texto completoEndo, Hirohisa, Kozaburo Tamura y Makoto Yao. "Liquid metals and semiconductors under pressure". Canadian Journal of Physics 65, n.º 3 (1 de marzo de 1987): 266–85. http://dx.doi.org/10.1139/p87-036.
Texto completoFan, Yan. "Recent progress in diluted ferromagnetism for spintronic application". Journal of Physics: Conference Series 2608, n.º 1 (1 de octubre de 2023): 012046. http://dx.doi.org/10.1088/1742-6596/2608/1/012046.
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