Tesis sobre el tema "High temperature semiconductors"
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Skelland, Neil David. "High temperature ion implantation into insulators". Thesis, University of Sussex, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359076.
Texto completoVanpeteghem, Carine B. "High-pressure high-temperature structural studies of binary semiconductors". Thesis, University of Edinburgh, 2000. http://hdl.handle.net/1842/11496.
Texto completoBloom, Scott Harris. "Superconducting and normal compounds : some high field/high pressure effects /". Thesis, Connect to Dissertations & Theses @ Tufts University, 1989.
Buscar texto completoSubmitted to the Dept. of Physics. Includes bibliographical references (leaves 192-204). Access restricted to members of the Tufts University community. Also available via the World Wide Web;
Nilsson, Joakim. "Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors". Licentiate thesis, Luleå tekniska universitet, EISLAB, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-18113.
Texto completoGodkänd; 2016; 20160304 (joanil); Nedanstående person kommer att hålla licentiatseminarium för avläggande av teknologie licentiatexamen. Namn: Joakim Nilsson Ämne: Industriell Elektronik/Industrial Electronics Uppsats: Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors Examinator: Docent Jonny Johansson, Institutionen för system- och rymdteknik, Avdelning: EISLAB, Luleå tekniska universitet. Diskutant: Docent Johan Sidén, Avdelningen för Elektronikkonstruktion, Mittuniversitetet, Sundsvall. Tid: Tisdag 3 maj, 2016 kl 8.30 Plats: A1547, Luleå tekniska universitet
Puchkov, Anton V. "The doping dependence of the optical properties of high-temperature superconductors /". *McMaster only, 1996.
Buscar texto completoJansson, Rasmus. "Completion of the software required for a high-temperature DLTS setup". Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-205076.
Texto completoDLTS investigation of wide bandgap materials
Diamond electronics
Barclay, Joshua David. "High Temperature Water as an Etch and Clean for SiO2 and Si3N4". Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1404614/.
Texto completoKhan-Cheema, Umar Manzoor. "Vertical transport through an InAs/GaSb heterojunction at high pressures and magnetic fields". Thesis, University of Oxford, 1996. http://ora.ox.ac.uk/objects/uuid:fc7eef99-19d3-4d38-81c7-a84657282e8b.
Texto completoColmenares, Juan. "Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics". Doctoral thesis, KTH, Elkraftteknik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192626.
Texto completoQC 20160922
Haskel, Daniel. "Local structural studies of oriented high temperature superconducting cuprates by polarized XAFS spectroscopy /". Thesis, Connect to this title online; UW restricted, 1998. http://hdl.handle.net/1773/9712.
Texto completoThomas, Dylan Buxton. "Silicon-germanium devices and circuits for high temperature applications". Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33949.
Texto completoБондаренко, И. Н., В. А. Николаенко y А. В. Полищук. "The cavity with the Tunnel Diodes and Corbino-Electrodes for Analyze Dielectrics and Semiconductors". Thesis, Sumy State University, 2019. http://openarchive.nure.ua/handle/document/10409.
Texto completoYang, Chang, Max Kneiß, Friedrich-Leonhard Schein, Michael Lorenz y Marius Grundmann. "Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109". Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-205875.
Texto completoFourreau, Yohan. "Study of the structural properties and defects in CdxHg1-xTe / Cd1-yZnyTe system and investigation of technological improvements for Infrared detection at high temperature". Electronic Thesis or Diss., Paris 6, 2016. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2016PA066761.pdf.
Texto completoQuality and stability issues of the images of the matrix components IR cooled with materials II-VI, in particular at high temperature with functioning is critical stakes for Sofradir in a very competitive context. In particular, CdHgTe FPAs are confronted with instabilities in noises of certain pixels, said "blinkers", dominated by a noise type RTS's low frequency (Random Telegraph Signal) difficult to correct. Works show that this specific noise is partially connected to the density of dislocations of the absorption layer, CdHgTe. The improvement of the performances in noise of imagers thus passes by the reduction of the density of dislocations of the alloy CdHgTe.More specifically, these works had for objectives the reduction of the density of dislocations stemming from the plastic relaxation of all or part of the constraints related to the lattice mismatch between the liquid-phase epitaxy (EPL) CdHgTe ( 111 ) B and its CdZnTe substrate.It is shown in these works that the crystalline quality of CdHgTe is situated in the world state of the art when the growths are made in lattice-match conditions (EPD from 9.103 to 5.104 cm-2). The degradation of the crystalline quality of epitaxy is then correlated to the increase of the lattice mismatch substrate-epitaxy, which remains very low (0,1 %). From then on, several solutions, partially stemming from the literature of the systems CdHgTe on If, GaAs or Ge, in strong lattice mismatch (> 13 %), were implemented in these works to limit the formation of misfit dislocations within the CdHgTe layer. In particular, A specific method based on CdHgTe epitaxy was developed to reduce lattice mismatch between the CdZnTe substrate and the CdHgTe epitaxy. The efficiency of this method is estimated since the structural characterization CdHgTe layers, up to the analysis of the electro-optical performances of FPA components.Finally, the problem of the lattice mismatch is approached on a wider frame, in particular via the study of other II-VI-based alloys allowing the realization of lattice-match substrates for CdHgTe. The crystalline quality of these substrates and the realized CdHgTe layers is close to the state of the art. These preliminary conclusions open perspectives of big interest
Mallavarpu, Navin. "Large signal model development and high efficiency power amplifier design in cmos technology for millimeter-wave applications". Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44711.
Texto completoDorji, Chencho. "Etude des propriétés des isolants liquides pour l’encapsulation des substrats d’électronique de puissance". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT022.
Texto completoPower modules based on wide band gap semiconductor has the potential to withstand high temperature (junction temperature >>200°C) and high voltage (blocking voltage of 10kV) contary to silicone based power module. However, silicone gel, the most commonly used encapsulant material in power modules cannot operatrate above 200°C. Moreover, electrical breakdown and partial discharge events results in permanent damage of the power module. In this work, we propose liquid dielectric as a potential encapsulant that may have better electrical and thermal performance than silicone gel. We did dielectric characterization of several potential liquids and developed field simulation model to study the electric field at triple point in power modules. Partial discharge measurements were made under AC and fast rise with different power electronic substrates embedded in liquid dielectrics. We also investigated the possibility of cooling power devices with EHD heat transfer enhancement and performed some supplementary experiments on thermal againg of liquids. The results indicated that liquids have potential to be used as encapsulant in power modules
Grummel, Brian. "HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES". Master's thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3200.
Texto completoM.S.E.E.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering MSEE
Sordes, Delphine. "Imagerie, manipulation et contact électronique atome par atome sur la surface Si(100) : H avec le microscope à effet tunnel basse température à 4 pointes". Thesis, Toulouse 3, 2017. http://www.theses.fr/2017TOU30048/document.
Texto completoThe construction of electronic circuits of atomic section is one of the great challenges of the ultimate nanoelectronics. To build an atomic electronic circuit, it is necessary first to develop the dedicated instrument to build up and then to choose the support surface stabilizing this circuit. On the Au(111) surface prepared in ultra-vacuum, we implemented and stabilized the very first LT-UHV-4 STM. This STM 4-probes microscopes scanning at the same time and independently the same surface was built for the CEMES by the ScientaOmicron company. On Au(111), we reproduced all the experimental results obtained on the best LT-UHV-STM with one probe such as the precision in roughness of 2 pm, the IV characteristics recording without any average on a single atom for several tens of minutes and the atomic manipulation following the pulling, sliding and pushing modes of a single gold atom on the surface. Once this optimization was carried out, we applied our LT-UHV-4 STM to the surface of Si(100):H, probable support of the future electronic atomic circuits. The choice of this medium is discussed in detail before recording and analysis of the STM images. The samples used come either from the semi-industrial full-wafer silicon process developed at CEA-LETI or from their in-situ preparation, which takes place directly in the preparation chamber of the LT-UHV-4 STM. We have taken care to interpret the STM images of the surface Si(100):H in order to locate the position of each hydrogen atom. The atomic lithography by STM has been exploited, by using one tip from our LT-UHV-4 STM, by atom-per-atom vertical mode and faster scanning mode. The last makes atomic writing less accurate. We have constructed our own atomic wires and then atomic contact pads, small squares of Si(100)H defeated by a few nm sides. The leakage currents with 2 probes at the atomic scale have thus been able to be measured on the surface of Si(100):H between two of these pads. To prepare the atomic contacts at least 2 probes on an atomic wire or on nanometric contact pads, we studied in detail the different types of contact points STM-single dangling bond showing the difficulty of reaching a quantum of conductance at contact, due to a possible bands bending. It is therefore difficult without a complementary force measurement to determine, starting from the tunnel contact, the different steps of the mechanical, electronic contact at the chemical contact. Our results open the way to the characterization of electronic circuits constructed atom-by-atom and at atomic scale on the surface of a semiconductor
Wang, Cai Johnson R. Wayne. "High temperature high power SiC devices packaging processes and materials development". Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Spring/doctoral/WANG_CAI_24.pdf.
Texto completoTan, Wei Kiong. "High operating temperature of passively mode-locked InGaAsP/InP semiconductor lasers". Thesis, University of Glasgow, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.417710.
Texto completoLiu, Yi. "Light scattering study of semiconductor heterostructures and high temperature superconductor films /". The Ohio State University, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487688507505736.
Texto completoMarklund, Daniel. "Control of a high temperature DLTS setup". Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-328710.
Texto completoZhang, Zhiye. "Sintering of Micro-scale and Nanscale Silver Paste for Power Semiconductor Devices Attachment". Diss., Virginia Tech, 2005. http://hdl.handle.net/10919/28902.
Texto completoPh. D.
Grummel, Brian. "Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices". Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5231.
Texto completoPh.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
DiMarino, Christina Marie. "High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors". Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/78116.
Texto completoMaster of Science
Barlow, Mark Donald. "Metal-Semiconductor Contacts for Schottky Diode Fabrication". Youngstown State University / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1198114671.
Texto completoWang, Hongfang. "Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters". Diss., Virginia Tech, 2007. http://hdl.handle.net/10919/27517.
Texto completoPh. D.
Neuenschwander, Jürg. "A high pressure low temperature study on rare earth compounds : semiconductor to metal transition /". [S.l.] : [s.n.], 1988. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=8668.
Texto completoPLACHA, KATARZYNA. "Modelling and Constructing Devices Including Innovative Joining of High Temperature Thermoelectric Modules". Doctoral thesis, Politecnico di Torino, 2019. http://hdl.handle.net/11583/2737678.
Texto completoClavijo, William Paul. "Low-temperature Fabrication Process for Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors". VCU Scholars Compass, 2017. http://scholarscompass.vcu.edu/etd/4781.
Texto completoWatanabe, Naoki. "Fundamental Study on Wide-Bandgap-Semiconductor MEMS and Photodetectors for Integrated Smart Sensors". 京都大学 (Kyoto University), 2013. http://hdl.handle.net/2433/174944.
Texto completoShcherbakova, Olga V. "Development of MgB₂-xCx superconductors and understanding their electromagnetic behaviour". Institute for Superconducting and Electronic Materials - Faculty of Engineering, 2008. http://ro.uow.edu.au/theses/11.
Texto completoJAYASEELAN, VIDHYA SAGAR. "STUDY OF POLYCRYSTALLINE DIAMOND THIN FILMS GROWN IN A CUSTOM BUILT ECR PE-CVD SYSTEM". University of Cincinnati / OhioLINK, 2000. http://rave.ohiolink.edu/etdc/view?acc_num=ucin975513169.
Texto completoMuslim, Joko. "Study of dielectric liquids as alternative encapsulant for high temperature electronics power modules applications". Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT109.
Texto completoTodays, power electronics cover wide range of applications in our daily life, starting from household appliances, communications, transportation systems up to harsh and extreme environment as in oil and gas exploration and the deep space missions. The main deliveries of power electronics are energy efficiency, compact size, reliability, long durability. Improving power electronics will surely mean to deal with materials, the packaging system, switching technologies, heat dissipation, dielectric properties, thermal stability etc. It was since the first arc-mercury rectifying in traction system, and then reshaped by the discovery of classical semiconductor (Si based) and ultimately the wide bandgap semiconductor materials, such as SiC, GaN and carbon based (diamond). They have superior thermal and dielectric properties compared to previous classical semiconductor technologies (Ge, Si and GaAs), and allow devices to operate at higher voltage, temperature and switching frequency in power modules. Unfortunately, these developments are not equally followed by other parts within, such as encapsulant.Despite their key roles to provide mechanical and electrical protection inside a power module, silicone gel as major encapsulant is limited to 200°C, which is far below devices (e.g. SiC at 500°C). Encapsulant came from polymerization and curing process of silicone liquids mixture and transforms into gel. They worked very well when assembly with classical SC devices, but not with WBG SC. Thus, it is necessary to solve this thermal related issue by improving silicone gel or start looking for other type of encapsulant with better thermal performance such as dielectric liquid or gas.Dielectric liquids have been used as insulating medium for high voltage (HV) applications for decades. Their excellent self-healing and arc quenching properties were used in the HV circuit breaker applications even though nowadays replaced by gas. Their low viscosity allow the fluid flow to exchange heat from internal source yielding effective cooling system as in power transformers. Other industries use dielectric liquids as heat transfer liquid at much higher temperature range compare to those in HV applications. Of course as heat transfer liquids, their dielectric properties are out of considerations. Nevertheless, having this wide range of applications spectrum, dielectric liquids seem rather promising and potential as alternative encapsulant. Some questions then aroused such as how are their electrical properties at high temperature (HT) approx. 400°C, are their dielectric properties stable at HT and can they contribute to cooling of devices inside power module.This work presents the initial study of dielectric liquids for HT power electronics module applications. We demonstrated the electrical characterization of several dielectric liquids under influence of temperature such as dielectric spectroscopy and ion mobility measurement, partial discharge, streamers and breakdown. Interesting physical phenomena such as liquid motions due to EHD and natural thermal convection were observed during experiments. Comparison among liquids are showed to indicate the most convenient. In term of application, conditions were adapted and simplified to replicate as those in power module when we performed characterizations to actual ceramic substrates under quasi-uniform to highly divergent electric field with AC, DC and impulse voltage. Many fundamental behaviours of liquids have been confirmed and evidenced at HT range. Governing parameters for electrical properties such as breakdown, charge injection etc. were affirmed.While not all aspects of encapsulant requirement in term of HT are covered, this work has established essential basis for electrical properties of dielectric liquids. Further works are required to fully assess their compatibility as alternative encapsulant, such as thermal ageing process, cooling contribution, complete modelling, etc
Little, Matthew Michael. "Feasibility of manipulating correlated color temperatures with a phosphor converted high-powered light emitting diode white light source". DigitalCommons@CalPoly, 2010. https://digitalcommons.calpoly.edu/theses/332.
Texto completoLabrune, Martin. "Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells". Phd thesis, Palaiseau, Ecole polytechnique, 2011. https://pastel.hal.science/docs/00/61/16/52/PDF/thesis_Martin_LABRUNE.pdf.
Texto completoCette thèse est le résultat d'un travail dédié à la croissance par PECVD de couches minces de silicium sur des substrats de silicium cristallin pour des applications photovoltaïques. L'objectif premier était d'obtenir une croissance amorphe sur toutes les orientations cristallines possibles afin de passiver efficacement les surfaces de silicium, prérequis indispensable à l'obtention de cellules solaires à hétérojonction efficaces. Nous avons en effet montré qu'une croissance épitaxiale, ou microcristalline, très faciles à obtenir sur (100) conduisait à une piètre passivation. Nous avons aussi montré que faire croître une couche de quelques nanomètres seulement d'alliage a-Si1-xCx:H permettait d'éviter, de manière robuste et reproductible la croissance épitaxiale, tout en permettant d'obtenir des passivations excellentes en déposant ensuite des couches minces d'a-Si:H. Une optimisation principalement basée sur des mesures d'ellipsométrie spectroscopique, de durée de vie effective (Sinton) et de charactéristiques courant-tension, nous ont permis d'obtenir des cellules à hétérojonctions a-Si:H/c-Si de 25 cm2 avec des VCO et des FF stables de 710 mV et 76 % respectivement sur des substrats lisses de (n) c-Si, dont les contacts étaient réalisés par sérigraphie de pâtes d'aluminium à basse température. Ce travail a aussi permis d'apporter la preuve du concept de cellules entièrement réalisées par voie sèche, i. E. Dont l'oxyde natif est gravé par un plasma de SiF4 au lieu d'une trempe HF. Enfin, la croissance épitaxiale de couches de silicium, non-dopé et dopé n et p, sur des surfaces orientées (100) a été étudiée par ellipsométrie et mesures par effet Hall. Nous avons été en mesure de produire des cellules cristallines dont l'émetteur de type P était épitaxié ainsi que des cellules de type p-i-n dont l'absorbeur était constitué par une couche non-dopée épitaxiée de silicium, déposé sur un substrat (100) très dopé au bore
Labrune, Martin. "Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells". Phd thesis, Ecole Polytechnique X, 2011. http://pastel.archives-ouvertes.fr/pastel-00611652.
Texto completoAllain, Laurent. "Etude des effets de la temperature sur la diffraction des rayons x par des composes semiconducteurs iii-v". Paris 6, 1988. http://www.theses.fr/1988PA066016.
Texto completoMånsson, Martin. "Adatoms, Quasiparticles & Photons : The Multifaceted World of Photoelectron Spectroscopy". Doctoral thesis, KTH, Mikroelektronik och tillämpad fysik, MAP, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4659.
Texto completoQC 20100810
Ferreyra, Romualdo A. "Electron – phonon interaction in multiple channel GaN based HFETs: Heat management optimization". VCU Scholars Compass, 2014. http://scholarscompass.vcu.edu/etd/3636.
Texto completoWilcox, Edward. "Silicon-germanium devices and circuits for cryogenic and high-radiation space environments". Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33850.
Texto completoBerthou, Maxime. "Implementation of high voltage Silicon Carbide rectifiers and switches". Phd thesis, INSA de Lyon, 2012. http://tel.archives-ouvertes.fr/tel-00770661.
Texto completoNewby, Pascal. "Fabrication de semiconducteurs poreux pour améliorer l'isolation thermique des MEMS". Thesis, Lyon, INSA, 2013. http://www.theses.fr/2013ISAL0154/document.
Texto completoThermal insulation is essential in several types of MEMS (Micro electro mechanical systems). Depending on the device, insulation can reduce the device’s power consumption, decrease its response time, or increase its sensitivity. Existing thermal insulation materials are difficult to integrate as thick layers in silicon-based devices. Because of this, the most commonly used approach is to integrate the areas requiring insulation on thin membranes. This provides effective insulation, but restricts the design of the device and the membrane’s fragility makes the device’s fabrication and use more complicated. Poreux silicon is easy to integrate as it is made by electrochemical etching of crystalline silicon substrates. 100 µm thick layers can easily be fabricated and its thermal conductivity is 2-3 orders of magnitude lower than that of bulk silicon. However, its porosity causes other problems : low chemical resistance, its structure is unstable above 400°C, and reduced mechanical stability. The ease of integration of porous semiconductors remains a major advantage, so we aim to reduce the disadvantages of these materials in order to help their integration in microfabricated devices. The first approach we developed was to amorphise porous Si by irradiating it with heavy ions. We have shown that amorphisation of porous Si, even partial, causes a reduction of its thermal conductivity without damaging its porous structure. In this way a reduction in thermal conductivity by up to a factor of three can be achieved. The second approach was to develop a new material. Porous SiC was chosen, as bulk SiC has exceptional physical properties which are superior to those of silicon. We carried out a systematic study of the porosification process of SiC versus HF concentration and current, which enabled us to make thick (100 µm) and uniform layers. We have implemented a system for measuring thermal conductivity using the “3 omega” technique and used it to measure the thermal conductivity of porous SiC. Our results show that the thermal conductivity of porous SiC is about two orders of magnitude lower than that of bulk SiC. We have also shown that porous SiC is resistant to all chemical commonly used in microfabrication, and is stable up to at least 1000°C
Valloggia, Sylvie. "SPECTROSCOPIE DE PHOTOLUMINESCENCE LOCALE DANS LES SEMICONDUCTEURS MASSIFS (Si, InP) ET LES PUITS QUANTIQUES (GaAs/GaAlAs)". Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37619041b.
Texto completoHascoët, Stanislas. "Mise en oeuvre de nouveaux matériaux d’assemblage dans les modules multipuces de puissance (MCM)". Thesis, Lyon, INSA, 2013. http://www.theses.fr/2013ISAL0123/document.
Texto completoUse of wide band gap chip in the power electronic industry requires an optimization of the close environment (packaging). Indeed, the can often sustain lower temperature than the die, especially the solder that are used to bond the parts of the module. Consequently, new bonding methods are investigated to enhance the performance of the packages. Silver sintering bonding technique is one the most promising. This method allow to bond parts at moderate temperature and the formed joint to operate at very high temperature (until the melting point of silver). This work is focused on the development of this bonding technique in the case of bonding a dies on a substrate. A study of the influence of the different parameters on the strength of the formed bond has been done. It revealed a major influence of the finishes of the bonded parts. Bonding on silver finished substrate results in good mechanical strength of the bond even after ageing. Furthermore, no interface issues are observed. However, the most used finish for power electronic is not silver but nickel-gold. Regarding this type of finish, the bond quality depends on the gold thickness, sintering profile and also sintering atmosphere. A solid solution of silver and gold seems to develop on the surface of the substrate, decreasing the section of the silver grains in contact with the substrate. Thus the mechanical strength of the assembly is decreased. This effect should be limited by the gold available for the Au-Ag solid solution growth. When sintering under nitrogen, the diffusion of silver on the gold surface is much lower than under air. Good results have been obtained with these configurations and even after ageing. Adding pressure during the thermal treatment seems also to minimize the phenomenon, probably by increasing the number of silver grains in contact with the substrate surface and so reducing the free surface for Au-Ag layer formation. Those results have been used to build prototypes, one of whom has been electrically tested with success at temperatures up to 300°C
Bouschet, Maxime. "Détecteur quantique à superréseaux 'Ga-free' fonctionnant à haute température dans la totalité de la gamme spectrale du moyen infrarouge". Electronic Thesis or Diss., Université de Montpellier (2022-....), 2023. http://www.theses.fr/2023UMONS006.
Texto completoAn Increase of the operating temperature of the high performance cooled infrared (IR) detector focal plane arrays (FPAs) would induce a reduction in size, weight and power consumption of the cryocooler and allow a new class of applications where the needs in portability, compactness and energy autonomy of the IR cameras are essential. Currently, the photodetector technologies operating at high temperature (T= 150K), in particular the detector based on InAsSb, only cover a part of the midwave infrared (MWIR) domain, below 4.2µm. The extension of the cutoff wavelength to the full MWIR spectrum until 5µm for an operating temperature equal to 150K or higher, with no tradeoffs in performance, would present evident radiometric advantages. Combining the advantages of superlattice (SL) nanostructures in term of tuning of cut-off wavelength and the ones of XBn barrier structure device, the main objective of the thesis is to fabricate and study the first Ga-free InAs/InAsSb type-II superlattice (T2SL) photodetector. The Ga-free T2SL photodetector on GaSb substrate is used in a XBn configuration with a 5 µm cutoff wavelength and showing state of the art performance in terms of dark current and quantum efficiency
Parsa, Yohan. "Oxydation thermique du chrome pur en atmosphère contrôlée : propriétés semiconductrices et structurales de la chromine". Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAI081/document.
Texto completoThe chemical durability of the metal alloy results in particular from the nature of point defects providing transport through the oxidation film formed on the surface. Models oxide layers, grown by thermal oxidation and Alomic Layer Deposition, will be studied by photoelectrochemistry. This will provide us information about the semiconductive properties of the oxide, determined by the point defect in the oxide layer, and should allow us a better understanding of the formation mechanism of these oxide
Barilero, Gilles. "Etude de quelques proprietes magnetooptiques et magnetiques des semiconducteurs semimagnetiques zn : :(1-x)mn::(x)te et hg::(1-x)mn::(x)te". Paris 6, 1987. http://www.theses.fr/1987PA066084.
Texto completoMadhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures". Thesis, Indian Institute of Science, 2000. https://etd.iisc.ac.in/handle/2005/294.
Texto completoMadhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures". Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.
Texto completo