Libros sobre el tema "High temperature semiconductors"
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M, Willander y Hartnagel Hans 1934-, eds. High temperature electronics. London: Chapman & Hall, 1997.
Buscar texto completoNational Research Council (U.S.). Committee on Materials for High-Temperature Semiconductor Devices., ed. Materials for high-temperature semiconductor devices. Washington, D.C: National Academy Press, 1995.
Buscar texto completoBakker, Anton. High-accuracy CMOS smart temperature sensors. Boston, MA: Kluwer Academic Publishers, 2000.
Buscar texto completoChristou, A. Reliability of high temperature electronics. College Park, Md: Center for Reliability Engineering, University of Maryland, 1996.
Buscar texto completoBakker, Anton. High-Accuracy CMOS Smart Temperature Sensors. Boston, MA: Springer US, 2000.
Buscar texto completouniversitet, Uppsala, ed. Dynamic magnetic properties of high temperature superconductors at low fields. Uppsala: Acta Universitatis Upsaliensis, 1997.
Buscar texto completoCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Buscar texto completoCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Buscar texto completoL, Shindé Subhash y Rudman David Albert, eds. Interfaces in high-Tc superconducting systems. New York: Springer-Verlag, 1994.
Buscar texto completoLongya, Xu, Zhu Lu y United States. National Aeronautics and Space Administration., eds. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.
Buscar texto completoLongya, Xu, Zhu Lu y United States. National Aeronautics and Space Administration., eds. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.
Buscar texto completoM, Singer J., ed. Phase transition approach to high temperature superconductivity: Universal properties of cuprate superconductors. London: Imperial College Press, 2000.
Buscar texto completoSymposium E on High-Temperature Electronics: Materials, Devices, and Applications (1994 Strasbourg, France). High temperature electronics: Proceedings of Symposium E on High-Temperature Electronics: Materials, Devices, and Applications of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994. Amsterdam: Elsevier, 1995.
Buscar texto completoCarpinero, Gullerno. Semiconductor terahertz technology: Devices and systems at room temperature operation. Hoboken: John Wiley & Sons, Inc., 2015.
Buscar texto completoA, Smirnov I., Institut fiziki (Akademii͡a︡ nauk SSSR) y Vsesoi͡u︡znai͡a︡ shkola "Aktualʹnye voprosy fiziki i khimii redkozemelʹnykh poluprovodnikov" (7th : 1987 : Makhachkala, Russia), eds. Aktualʹnye voprosy fiziki i khimii redkozemelʹnykh poluprovodnikov: Tematicheskiĭ sbornik. Makhachkala: Institut fiziki, Dagestanskiĭ filial AN SSSR, 1988.
Buscar texto completoL, Shindé Subhash y Rudman David A, eds. Interfaces in high-T(subscript c) superconducting systems. New York: Springer-Verlag, 1994.
Buscar texto completoA, Madhukar, Society of Photo-optical Instrumentation Engineers., Society of Vacuum Coaters y SPIE Symposium on Advances in Semiconductors and Superconductors: Physics Toward Device Applications (1990 : San Diego, Calif.), eds. Growth of semiconductor structures and high-Tc thin films on semiconductors: 20-21 March 1990, San Diego, Calfiornia. Bellingham, Wash., USA: The Society, 1990.
Buscar texto completoEuropean Conference on High Temperature Electronics (3rd 1999 Berlin, Germany). HITEN 99: The Third European Conference on High Temperature Electronics. Abingdon, Oxfordshire, England: AEA Technology, 1999.
Buscar texto completoD, Hochheimer Hans, Etters Richard D, North Atlantic Treaty Organization. Scientific Affairs Division. y NATO Advanced Research Workshop on Frontiers of High-Pressure Research (1991 : Fort Collins, Colo.), eds. Frontiers of high-pressure research. New York: Plenum Press, 1991.
Buscar texto completoDammann, Michael. Defects in silicon induced by high temperature treatment and their influence on MOS-devices: A thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences. Zurich: Physical Electronics Laboratory, Swiss Federal Institute of Technology, 1994.
Buscar texto completoChristian, Fazi, Parsons James D y United States. National Aeronautics and Space Administration., eds. Fast risetime reverse bias pulse failures in SiC PN junction diodes. [Washington, DC]: National Aeronautics and Space Administration, 1996.
Buscar texto completo1949-, Simons Rainee y United States. National Aeronautics and Space Administration., eds. Characteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Buscar texto completo1949-, Simons Rainee y United States. National Aeronautics and Space Administration., eds. Characteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Buscar texto completoAnthony, Powell J., Petit Jeremy B y United States. National Aeronautics and Space Administration., eds. Development of silicon carbide semiconductor devices for high temperature applications. [Washington, DC]: National Aeronautics and Space Administration, 1991.
Buscar texto completoK, Yeoh W., ed. Improvement of vortex pinning in MgB₂ by doping. New York: Nova Science Publishers, 2008.
Buscar texto completoNagaev, Edouard. Magnetic Semiconductors and High Temperature Superconductivity. University of Cambridge ESOL Examinations, 1999.
Buscar texto completoSpencer, Michael, Michael Shur, Steven Denbaars y John Palmour. Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512. University of Cambridge ESOL Examinations, 2014.
Buscar texto completo(Editor), Magnus Willander y H. L. Hartnagel (Editor), eds. High Temperature Electronics (Electronic Materials Series). Springer, 1996.
Buscar texto completoJeon, Deok-Su. Modeling the temperature dependence of the silicon-on-insulator mosfet for high-temperature applications. 1990.
Buscar texto completoCharacteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Buscar texto completoWide-bandgap semiconductors for high power, high frequency, and high temperature: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. Warrendale, Penn: Materials Research Society, 1998.
Buscar texto completoShinde, Subhash. Interfaces in High-Tc Superconducting Systems. Springer, 2013.
Buscar texto completoHan, Weimin. NMR study of GaAs at high temperature. 1992.
Buscar texto completoGermany) European Conference on High Temperature Electronics (3rd : 1999 : Berlin. Hiten 99: The Third European Conference on High Temperature Electronics. Institute of Electrical & Electronics Enginee, 1999.
Buscar texto completoHartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu y Antti Räisänen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Limited, John, 2015.
Buscar texto completoHartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu y Antti Raisanen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Incorporated, John, 2015.
Buscar texto completoHartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu y Antti Raisanen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Incorporated, John, 2015.
Buscar texto completoDikmen, Cemal Tamer. Modeling and design of semiconductor devices and integrated circuits for high-temperature electronics. 1994.
Buscar texto completoWide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Symposium Held April 13-15, 1998, San Francisco, California, U.S.A (Materials Research Society Symposium Proceedings). Materials Research Society, 1998.
Buscar texto completo(Editor), Hans D. Hochheimer y Richard E. Etters (Editor), eds. Frontiers of High Pressure Research (NATO Science Series: B:). Springer, 1992.
Buscar texto completoBakker, Anton y Johan H. Huijsing. High-Accuracy CMOS Smart Temperature Sensors (The Kluwer International Series in Engineering and Computer Science Volume 595) (The Springer International Series in Engineering and Computer Science). Springer, 2000.
Buscar texto completoAtomic layer growth and processing: Symposium held April 29 - May 1, Anaheim, California, U.S.A. Pittsburgh: Materials Research Society, 1991.
Buscar texto completoFast risetime reverse bias pulse failures in SiC PN junction diodes. [Washington, DC]: National Aeronautics and Space Administration, 1996.
Buscar texto completoMaterials for High-Temperature Semiconductor Devices. Washington, D.C.: National Academies Press, 1995. http://dx.doi.org/10.17226/5023.
Texto completoCommittee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.
Buscar texto completoCommittee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.
Buscar texto completoCommittee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.
Buscar texto completoCharacteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Buscar texto completoNeuenschwander, Jürg. A high pressure low temperature study on rare earth compounds: Semiconductor to metal transition. 1988.
Buscar texto completoQueisser, H. J. Festkörper Probleme: Plenary Lectures of the Divisions Semiconductor Physics, Surface Physics, Low Temperature Physics, High Polymers, Thermodynamics and Statistical Mechanics, of the German Physical Society, Münster, March 19-24 1973. Elsevier Science & Technology Books, 2013.
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