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Artículos de revistas sobre el tema "High frequency electronic devices"

Autor: Grafiati
Publicado: 10 de marzo de 2023

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1

Trew, R. J. "High-Frequency Solid-State Electronic Devices". IEEE Transactions on Electron Devices 52, n.º 5 (mayo de 2005): 638–49. http://dx.doi.org/10.1109/ted.2005.845862.

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2

Zhao, Lan y Wen Lei Zhao. "Frequency Characteristics and Conversion of Microwave Photons". Applied Mechanics and Materials 568-570 (junio de 2014): 1303–6. http://dx.doi.org/10.4028/www.scientific.net/amm.568-570.1303.

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The microwave frequency conversion technology, also known as mixers, RF and microwave system is the transmitter and the receiver have the basic functions. Microwave photon system, instead of the traditional high-speed optoelectronic devices electronic device to overcome the conventional signal processing electronics in the electronic bottleneck. In this paper, respectively, modulators and optical devices based on nonlinear effects of microwave photon frequency conversion methods are summarized, research and verify the bandpass filter can achieve frequency conversion scheme.
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3

Hasan, Md Nazmul, Edward Swinnich y Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics". International Journal of High Speed Electronics and Systems 28, n.º 01n02 (marzo de 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.

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In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on β-Ga2O3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.
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4

SATO, TOSHIRO. "Micromagnetic Devices for High Frequency Power." Journal of the Institute of Electrical Engineers of Japan 123, n.º 11 (2003): 723–26. http://dx.doi.org/10.1541/ieejjournal.123.723.

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5

Rahman, Md Wahidur, Chandan Joishi, Nidhin Kurian Kalarickal, Hyunsoo Lee y Siddharth Rajan. "High-Permittivity Dielectric for High-Performance Wide Bandgap Electronic Devices". ECS Meeting Abstracts MA2022-02, n.º 32 (9 de octubre de 2022): 1210. http://dx.doi.org/10.1149/ma2022-02321210mtgabs.

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In this presentation, we will review recent work on the integration of high permittivity dielectrics with wide and and ultra-wide bandgap semiconductor devices to obtain improved high power and high frequency applications. We will first discuss the use of such structures for vertical power devices. The high permittivity dielectrics help to reduce surface fields and therefore prevent tunnel leakage from Schottky barriers [1]. Insertion of high permittivity dielectrics can also enable better field termination in high voltage vertical devices [2]. We will discuss recent results using such high permittivity dielectrics in vertical device structures based on Gallium Oxide, leading to high vertical electric fields up to 5.7 MV/cm being sustained in the structure. We will discuss the application of these high permittivity dielectrics for three-terminal high frequency [3] and high voltage [4,5] wide bandgap transistor applications. In lateral transistors built from wide and ultra-wide bandgap semiconductors, gate breakdown and non-uniform electric fields lead to average device breakdown fields that are significantly lower than material limits. We will show how high permittivity dielectrics inserted between the gate and drain can prevent gate breakdown, and also create much more uniform electric field profiles. An analytical model to explain this will be presented and compared with 2-dimensional device simulations. Finally, we will show experimental results for lateral devices from the high Al-composition AlGaN [6], -Ga2O3[7], and AlGaN/GaN [8] material systems, where in each case, we are able to achieve state-of-art breakdown performance for devices such as lateral Schottky diodes and transistors. For example, we have achieved up to 8.3 MV/cm field in high Al-content AlGaN devices, >5.5 MV/cm in -Ga2O3-based transistors, and >3 MV/cm lateral electric field in AlGaN/GaN HEMTs. The high breakdown fields also enable us to achieve state-of-art switching figures of merit in these devices. The authors acknowledge funding from NNSA ETI Consortium, AFOSR GAME MURI Program (Program Manager Dr. Ali Sayir), AFOSR (Program Manager Dr. Kenneth Goretta) NSF ECCS- and the DARPA DREAM program (Program Manger Dr. YK Chen), managed by ONR (Program Manager Dr. Paul Maki) for support of the work. References [1] Xia, Zhanbo, et al. "Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field." Applied Physics Letters 115.25 (2019): 252104. [2] Lee, Hyun-Soo, et al. "High-permittivity dielectric edge termination for vertical high voltage devices." Journal of Computational Electronics 19.4 (2020): 1538-1545. [3] Xia, Zhanbo, et al. "Design of transistors using high-permittivity materials." IEEE Transactions on Electron Devices 66.2 (2019): 896-900. [4] Kalarickal, Nidhin Kurian, et al. "Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors." IEEE Transactions on Electron Devices 68.1 (2020): 29-35. [5] Hanawa, Hideyuki, et al. "Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-k Passivation Layer." IEEE Transactions on Electron Devices 61.3 (2014): 769-775. [6] Razzak, Towhidur, et al. "BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm." Applied Physics Letters 116.2 (2020): 023507. [7] Kalarickal, Nidhin Kurian, et al. "β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm." IEEE Electron Device Letters 42.6 (2021): 899-902. [8] Rahman, Mohammad Wahidur, et al. "Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance." Applied Physics Letters 119.1 (2021): 013504.
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6

Liu, An-Chen, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo y Edward Yi Chang. "The Evolution of Manufacturing Technology for GaN Electronic Devices". Micromachines 12, n.º 7 (23 de junio de 2021): 737. http://dx.doi.org/10.3390/mi12070737.

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GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.
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7

Wang, Li y Chun Feng. "The International Research Progress of GaN-Based Microwave Electronic Devices". Advanced Materials Research 1053 (octubre de 2014): 69–73. http://dx.doi.org/10.4028/www.scientific.net/amr.1053.69.

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The international research progress of GaN-based high frequency, high power microwave electronic device is introduced. The latest developments in high efficiency and millimeter wave devices are especially described.
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8

Feng, Jinjun, Yubin Gong, Chaohai Du y Adrian Cross. "High-Frequency Vacuum Electron Devices". Electronics 11, n.º 5 (5 de marzo de 2022): 817. http://dx.doi.org/10.3390/electronics11050817.

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Vacuum electron devices at frequencies of millimeter waves and terahertz play highly important roles in the modern high-data rate and broadband communication system, high-resolution detection and imaging, medical diagnostics, magnetically confined nuclear fusion, etc [...]
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9

Ayubi-Moak, J. S., S. M. Goodnick y M. Saraniti. "Global Modeling of high frequency devices". Journal of Computational Electronics 5, n.º 4 (9 de diciembre de 2006): 415–18. http://dx.doi.org/10.1007/s10825-006-0028-3.

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10

OHSHIMA, S. "Special Section on Superconducting High-frequency Devices". IEICE Transactions on Electronics E89-C, n.º 2 (1 de febrero de 2006): 97. http://dx.doi.org/10.1093/ietele/e89-c.2.97.

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11

Petukhov, Igor B. y Vladimir L. Lanin. "High Frequency Ultrasonic Transducers for Interconnection Microwelding in Electronic Devices". International Journal of Scientific Research in Knowledge 3, n.º 9 (1 de septiembre de 2015): 241–46. http://dx.doi.org/10.12983/ijsrk-2015-p0241-0246.

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12

YAMAGUCHI, MASAHIRO. "Recent Progress of High Frequency Micromagnetic Devices." Journal of the Institute of Electrical Engineers of Japan 123, n.º 11 (2003): 716–18. http://dx.doi.org/10.1541/ieejjournal.123.716.

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13

Capano, Michael A. y Robert J. Trew. "Silicon Carbide Electronic Materials and Devices". MRS Bulletin 22, n.º 3 (marzo de 1997): 19–23. http://dx.doi.org/10.1557/s0883769400032711.

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The development of SiC for electronic applications has been a subject of intense research for nearly 40 years. Much of this research is motivated by the extraordinary combination of physical properties possessed by SiC, especially in the development of SiC-based devices for specific high-temperature, high-power, or high-frequency applications that are not suitable for Si- or GaAs-based devices. During the early years of SiC research and development, a significant amount of good, fundamental research was performed, but the development of commercially available SiC-based devices was retarded by low-quality bulk materials and inadequate epitaxial processes. In the late 1980s, research at academic institutions, such as North Carolina State University, and industrial laboratories, such as Westinghouse (now Northrup-Grumman), Advanced Technology Materials, Inc. (ATMI), and Cree Research, Inc., coupled with the commercial offering of highquality SiC wafers from Cree, created an opportunity for further advancement. Improvements in epitaxial processes and device processing strategies were also realized during this time. Together these factors have enabled the fabrication of high-quality device structures and have generated increased research and funding activities in SiC electronic devices.
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14

Ioffe, Valery M. y Sergei I. Chikichev. "New varactors and high-power high-frequency capacitive devices". Solid-State Electronics 49, n.º 3 (marzo de 2005): 385–97. http://dx.doi.org/10.1016/j.sse.2004.11.018.

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15

Malykhin, A. Yu, A. A. Panich, A. E. Panich, G. S. Radchenko y A. V. Skrylev. "Forecasting of high-frequency magnetoelectric resonances of electronic technics component devices". Физические основы приборостроения 8, n.º 1 (15 de marzo de 2019): 36–41. http://dx.doi.org/10.25210/jfop-1901-036041.

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16

Paul, D., M. S. Nakhla, R. Achar y A. Weisshaar. "Broadband Modeling of High-Frequency Microwave Devices". IEEE Transactions on Microwave Theory and Techniques 57, n.º 2 (febrero de 2009): 361–73. http://dx.doi.org/10.1109/tmtt.2008.2011247.

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17

Urteaga, M., S. Krishnan, D. Scott, Y. Wei, M. Dahlstrom, S. Lee y M. J. W. Rodwell. "Submicron InP-based HBTs for Ultra-high Frequency Amplifiers". International Journal of High Speed Electronics and Systems 13, n.º 02 (junio de 2003): 457–95. http://dx.doi.org/10.1142/s0129156403001806.

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Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. We have fabricated HBTs with narrow collector junctions using a substrate transfer process. HBTs with submicron collector junctions exhibit extremely high fmax and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained record 21 dB unilateral power gain at 100 GHz. Recently-fabricated devices have shown unbounded unilateral power gain from 40-110 GHz, and fmax cannot be extrapolated from measuremente. However, these devices exhibited high power gains at 220 GHz, the frequency limit of presently available microwave network analyzers. Demonstrated amplifier ICs in the technology include reactively tuned amplifiers at 175 GHz, lumped and distributed amplifiers with bandwidths to 85 GHz, and W-band power amplifiers.
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18

Chu, Rong Ming. "GaN MOS Structures with Low Interface Trap Density". Solid State Phenomena 314 (febrero de 2021): 79–83. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.79.

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GaN based electronic devices have gained great success in the arena of high-frequency and high-power applications. A high-quality GaN MOS structure has the potential to enable new device designs and higher device performance, thereby bringing the success of GaN electronics to a new level. This paper discusses results of the work on GaN MOS structures show that with adequate surface preparation samples featuring interface trap density down to the ~ 1010 eV-1cm-2 range can be formed.
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19

KE, Haotao y Douglas C. Hopkins. "Development of Printed Power Packaging for a High Voltage SiC Module". International Symposium on Microelectronics 2012, n.º 1 (1 de enero de 2012): 000955–60. http://dx.doi.org/10.4071/isom-2012-wp55.

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Due to rapidly developing post silicon power devices, in particular SiC and GaN, three primary parameters in power packaging: temperature, voltage and current, are much more difficult to manage. The SiC devices are being developed for high voltage (>15kV). The GaN devices will have extremely low internal resistance, operate at extreme current densities (≫10A/mm2), and can account for <50% of the resistance in a power module. Both devices can operate at high temperatures (>300°C) and >10-times frequency compared to Si. The traditional power electronics packaging approaches need augmentation or replacement. Most technologies used in packaging of power electronic systems, or more generally Electronic Energy Systems, are ported from microelectronics. The recent development of printable 3D circuit techniques, e.g. jetting and dispensing, provide additional major approaches applicable to power packaging. Some printing techniques are already applied to solar cells and batteries. This paper explores the printable electronics technologies for application to power.
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20

Zhang, Jing. "Novel Thermal-Electrical-Mechanical Model for Simulating Coupled Phenomena in High-Frequency Electronic Devices". Key Engineering Materials 538 (enero de 2013): 173–76. http://dx.doi.org/10.4028/www.scientific.net/kem.538.173.

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We present a fully coupled thermal-electrical-mechanical finite element based model to study material degradation behaviors of high-frequency electronic devices. The mechanisms of degradation and ultimately failure in wide bandgap (WBG) devices are very complex. Under operating conditions, the devices are usually subject to high electric fields, high stress/strain fields, high current densities, high temperatures and high thermal gradients. Moreover, these phenomena are coupled together. The presented finite element model is capable of computing stress, temperature, and electric fields based on an innovative finite element approach for the solution of non-linear coupled thermal-electrical-mechanical problems. The model can be applied to wide bandgap electronic devices to address major issues of performance and lifetime.
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21

Hu, Qing, S. Verghese, R. A. Wyss, Th Schäpers, J. del Alamo, S. Feng, K. Yakubo, M. J. Rooks, M. R. Melloch y A. Förster. "High-frequency ( THz) studies of quantum-effect devices". Semiconductor Science and Technology 11, n.º 12 (1 de diciembre de 1996): 1888–94. http://dx.doi.org/10.1088/0268-1242/11/12/021.

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22

FREEMAN, G. G., B. JAGANNATHAN, N. ZAMDMER, R. GROVES, R. SINGH, Y. TRETIAKOV, M. KUMAR et al. "INTEGRATED SiGe AND Si DEVICE CAPABILITIES AND TRENDS FOR MULTI-GIGAHERTZ APPLICATIONS". International Journal of High Speed Electronics and Systems 13, n.º 01 (marzo de 2003): 175–219. http://dx.doi.org/10.1142/s0129156403001570.

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Silicon-based devices, including the increasingly available SiGe-based devices, are now demonstrating fT and fMAX values over 200 GHz. These recent advances open the door to a wide range of silicon-based very high frequency, low power and highly integrated solutions. Trends in silicon MOS, SiGe HBT, SiGe MODFET and SiGe strained silicon FETs are reported. Silicon inroads to device functions viewed as the sole realm of III-V technologies are also being demonstrated. Capability and trends of the integrated silicon photodiode are reported here as an example. Integration of these high-speed devices into a complex circuit requires on-chip passive device functionality at such high frequency. Key devices to enable integration are the inductor, varactor, and transmission line, and operation of these devices at high frequency is reported. Further, we discuss noise isolation issues and techniques, which may be used when minimizing cross-talk within a conductive silicon substrate.
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23

Han, Fangming, Ou Qian, Guowen Meng, Dou Lin, Gan Chen, Shiping Zhang, Qijun Pan, Xiang Zhang, Xiaoguang Zhu y Bingqing Wei. "Structurally integrated 3D carbon tube grid–based high-performance filter capacitor". Science 377, n.º 6609 (26 de agosto de 2022): 1004–7. http://dx.doi.org/10.1126/science.abh4380.

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Filter capacitors play a critical role in ensuring the quality and reliability of electrical and electronic equipment. Aluminum electrolytic capacitors are the most commonly used but are the largest filtering components, limiting device miniaturization. The high areal and volumetric capacitance of electric double-layer capacitors should make them ideal miniaturized filter capacitors, but they are hindered by their slow frequency responses. We report the development of interconnected and structurally integrated carbon tube grid–based electric double-layer capacitors with high areal capacitance and rapid frequency response. These capacitors exhibit excellent line filtering of 120-hertz voltage signal and volumetric advantages under low-voltage operations for digital circuits, portable electronics, and electrical appliances. These findings provide a sound technological basis for developing electric double-layer capacitors for miniaturizing filter and power devices.
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24

He, Juntao, Yibing Cao, Jiande Zhang, Ting Wang y Junpu Ling. "Design of a dual-frequency high-power microwave generator". Laser and Particle Beams 29, n.º 4 (diciembre de 2011): 479–85. http://dx.doi.org/10.1017/s0263034611000590.

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AbstractA new direction for high-power microwave (HPM) development is to investigate devices capable of producing HPMs with a complicated spectrum. In recent years, some HPM sources with two stable and separate frequencies have been investigated theoretically and experimentally. However, many short-comings still exist in these devices. Especially, the beam-wave interaction efficiency and the output microwave power are low in such devices. This paper proposes a novel dual-frequency HPM generator based on transition radiation. In the device, the electromagnetic fields are localized near the resonator cavities in the form of standing waves, and thus the interference between the different HPM components with different frequencies is weak. Compared with the existing dual-frequency devices, the new structure allows high beam-wave interaction efficiency and high output microwave power. As indicated in particle-in-cell simulation, with an electron beam of 500 kV voltage and 15.0 kA current guided by a magnetic field of 0.8 Tesla, an average power of 1.60 GW with a total power conversion efficiency of 21.3% is obtained, and the frequencies are 1.53 GHz and 3.29 GHz, respectively. Power level between two HPMs is comparable. The simulation results verify the feasibility of the dual-frequency HPM generator.
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25

Watanabe, S. "Technology transfer for high frequency devices for consumer electronics". IEEE Transactions on Microwave Theory and Techniques 40, n.º 12 (1992): 2461–66. http://dx.doi.org/10.1109/22.179917.

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26

Nikitin, V. F., N. N. Smirnov, M. N. Smirnova y V. V. Tyurenkova. "On board electronic devices safety subject to high frequency electromagnetic radiation effects". Acta Astronautica 135 (junio de 2017): 181–86. http://dx.doi.org/10.1016/j.actaastro.2016.09.012.

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27

YANAGIHARA, Manabu y Tetsuzo UEDA. "Development of GaN Power Devices for High Switching Frequency". Journal of The Institute of Electrical Engineers of Japan 139, n.º 2 (1 de febrero de 2019): 80–83. http://dx.doi.org/10.1541/ieejjournal.139.80.

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28

Pénarier, A., J. C. Vildeuil, M. Valenza, D. Rigaud, S. G. Jarrix, C. Delseny y F. Pascal. "Low-frequency noise in III–V high-speed devices". IEE Proceedings - Circuits, Devices and Systems 149, n.º 1 (1 de febrero de 2002): 59–67. http://dx.doi.org/10.1049/ip-cds:20020330.

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29

Bollaert, S., A. Cappy, Y. Roelens, J. S. Galloo, C. Gardes, Z. Teukam, X. Wallart et al. "Ballistic nano-devices for high frequency applications". Thin Solid Films 515, n.º 10 (marzo de 2007): 4321–26. http://dx.doi.org/10.1016/j.tsf.2006.07.178.

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30

Baiburin, V. B., A. S. Rozov, N. Yu Khorovodova, A. S. Ershov y A. A. Nikiforov. "A new approach to the development of perspective compact frequency multipliers of the subterahertz and terahertz bands for on-board electronic equipment". Radioengineering 8 (2021): 111–21. http://dx.doi.org/10.18127/j00338486-202108-12.

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Currently, the increasing interest of researchers is attracted by the theoretical and practical problems of mastering the sub-terahertz and terahertz frequency range. Electronic devices operating in these ranges find effective applications in various fields of science and technology: aerospace equipment, security systems, spectroscopy, medicine, biology and many others. The purpose of this work is to focus on a frequency multiplication device that allows using basic sources of relatively low frequency generation to enter the terahertz frequency range. The results of recent years obtained both on the basis of solid-state effects and with the help of vacuum electronics, in particular, magnetron-type devices, which are characterized by compactness, high resistance to radiation loads, mechanical influences, which is important for on-board equipment, are considered. It is known that at high frequencies, vacuum devices require super-precision manufacturing of decelerating systems. This is essentially the main difficulty. The article proposes a new approach based on the hypothesis of P.L. Kapitsa, which allows to significantly simplify the anode structure of a magnetron multiplier with an acceptable level of output parameters. The achievements of recent years in the field of creating sub-terahertz and terahertz frequency multipliers, mainly for on-board equipment of mobile platforms, taking into account the requirements of aerospace systems, first of all, are noted.
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31

Ibrahim, Ali, Zoubir Khatir y Laurent Dupont. "Characterization and Aging Test Methodology for Power Electronic Devices at High Temperature". Advanced Materials Research 324 (agosto de 2011): 411–14. http://dx.doi.org/10.4028/www.scientific.net/amr.324.411.

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Power electronic modules are key elements in the chain of power conversion. The application areas include aerospace, aviation, railway, electrical distribution, automotive, home automation, oil industry ... But the use of power electronics in high temperature environments is a major strategic issue in the coming years especially in transport. However, the active components based on silicon are limited in their applications and not suitable for those require both high voltages and high ambient temperatures. The materials with wide energy gap like SiC, GaN and diamond, have the advantage of being able to exceed these limits [1,2]. These materials seem adequate to extremely harsh temperature environments and allow the reduction of cooling systems, but also the increasing of switching frequency.
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32

Joglekar, Sameer, Mohamed Azize y Tomás Palacios. "Reactive sputtering of III-N materials for applications in electronic devices". MRS Advances 1, n.º 2 (2016): 141–46. http://dx.doi.org/10.1557/adv.2016.38.

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ABSTRACTGallium Nitride (GaN) and other III-N semiconductors are rapidly gaining importance in high power and high frequency electronic applications. III-N material based devices are fabricated on heterostructures that are usually grown by high vacuum techniques such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). However, in many applications, it is necessary to regrow thin cap layers of III-N materials during device fabrication. One such application is regrowth of ohmic contacts to III-N devices. Heavily doped n+ GaN, or InGaN grown by MBE or MOCVD is used to obtain low resistance non-alloyed ohmic contacts to GaN based devices. However, from a commercial point of view, this becomes difficult because of the high cost and lack of availability of ultra high vacuum (∼1x10-10 Torr) techniques in most clean room facilities. Reactive sputtering provides a cheaper and more ubiquitous alternative for the growth of thin cap layers on parent MOCVD III-N heterostructures during device fabrication. In this work, we explore the possibility of using reactive sputtering as a method to grow III-N materials as ohmic contacts to GaN based devices.
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33

Zhang, Dianhao, Xiao-guang Huang, Bin-liang Cheng y Neng Zhang. "Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module". Frattura ed Integrità Strutturale 15, n.º 55 (28 de diciembre de 2020): 316–26. http://dx.doi.org/10.3221/igf-esis.55.24.

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Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC materials and IGBT devices, and becomes an ideal device for high-frequency and high-temperature electronic devices. Even so, the thermal fatigue failure of SiC IGBT, which directly determines its application and promotion, is a problem worthy of attention. In this study, the thermal fatigue behavior of SiC-IGBT under cyclic temperature cycles was investigated by finite element method. The finite element thermomechanical model was established, and stress-strain distribution and creep characteristics of the SnAgCu solder layer were obtained. The thermal fatigue life of the solder was predicted by the creep, shear strain and energy model respectively, and the failure position and factor of failure were discussed.
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34

Balmer, R. S., I. Friel, S. M. Woollard, C. J. H. Wort, G. A. Scarsbrook, S. E. Coe, H. El-Hajj et al. "Unlocking diamond's potential as an electronic material". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, n.º 1863 (19 de noviembre de 2007): 251–65. http://dx.doi.org/10.1098/rsta.2007.2153.

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In this paper, we review the suitability of diamond as a semiconductor material for high-performance electronic applications. The current status of the manufacture of synthetic diamond is reviewed and assessed. In particular, we consider the quality of intrinsic material now available and the challenges in making doped structures suitable for practical devices. Two practical applications are considered in detail. First, the development of high-voltage switches capable of switching voltages in excess of 10 kV. Second, the development of diamond MESFETs for high-frequency and high-power applications. Here device data are reported showing a current density of more than 30 mA mm −1 along with small-signal RF measurements demonstrating gigahertz operation. We conclude by considering the remaining challenges which will need to be overcome if commercially attractive diamond electronic devices are to be manufactured.
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35

Leonte, I. I., G. Sehra, M. Cole, P. Hesketh y J. W. Gardner. "Taste sensors utilizing high-frequency SH-SAW devices". Sensors and Actuators B: Chemical 118, n.º 1-2 (octubre de 2006): 349–55. http://dx.doi.org/10.1016/j.snb.2006.04.040.

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36

AVRAMOV, IVAN D. "HIGH-PERFORMANCE SURFACE TRANSVERSE WAVE RESONATORS IN THE LOWER GHz FREQUENCY RANGE". International Journal of High Speed Electronics and Systems 10, n.º 03 (septiembre de 2000): 735–92. http://dx.doi.org/10.1142/s0129156400000635.

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Since the first successful surface transverse wave (STW) resonator was demonstrated by Bagwell and Bray in 1987, STW resonant devices on temperature stable cut orientations of piezoelectric quartz have enjoyed a spectacular development. The tremendous interest in these devices is based on the fact that, compared to the widely used surface acoustic waves (SAW), the STW acoustic mode features some unique properties which makes it very attractive for low-noise microwave oscillator applications in the 1.0 to 3.0 GHz frequency range in which SAW based or dielectric resonator oscillators (DRO) fail to provide satisfactory performance. These STW properties include: high propagation velocity, material Q-values exceeding three times those of SAW and bulk acoustic waves (BAW) on quartz, low propagation loss, unprecedented 1/f device phase noise, extremely high power handling ability, as well as low aging and low vibration sensitivity. This paper reviews the fundamentals of STW propagation in resonant geometries on rotated Y-cuts of quartz and highlights important design aspects necessary for achieving desired STW resonator performance. Different designs of high- and low-Q, low-loss resonant devices and coupled resonator filters (CRF) in the 1.0 to 2.5 GHz range are characterized and discussed. Design details and data on state-of-the-art STW based fixed frequency and voltage controlled oscillators (VCO) with low phase noise and high power efficiency are presented. Finally, several applications of STW devices in GHz range data transmitters, receivers and sensors are described and discussed.
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37

Knoesen, André, Ge Song, Willi Volksen, Elbert Huang, Teddie Magbitang, Linda Sundberg, James L. Hedrick, Craig J. Hawker y Robert D. Miller. "Porous organosilicates low-dielectric films for high-frequency devices". Journal of Electronic Materials 33, n.º 2 (febrero de 2004): 135–40. http://dx.doi.org/10.1007/s11664-004-0283-7.

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38

TREW, R. J. y M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 06, n.º 01 (marzo de 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.

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Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.
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39

Raskin, J. P., D. J. Pearman, G. Pailloncy, J. M. Larson, J. Snyder, D. L. Leadley y T. E. Whall. "High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices". IEEE Electron Device Letters 29, n.º 4 (abril de 2008): 396–98. http://dx.doi.org/10.1109/led.2008.918250.

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40

Blampain, Eloi, Omar Elmazria, Thierry Aubert, Badreddine Mohamed Assouar y Ouarda Legrani. "AlN/Sapphire: Promising Structure for High Temperature and High Frequency SAW Devices". IEEE Sensors Journal 13, n.º 12 (diciembre de 2013): 4607–12. http://dx.doi.org/10.1109/jsen.2013.2271863.

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41

Haziq, Muhaimin, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada y Mohd Syamsul. "Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review". Micromachines 13, n.º 12 (1 de diciembre de 2022): 2133. http://dx.doi.org/10.3390/mi13122133.

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The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that affect aluminum gallium nitride (AlGaN)/GaN HEMTs. The first part of this review provides a brief introduction to AlGaN/GaN HEMT technologies, and the second part outlines the challenges often faced during HEMT fabrication, such as normally-on operation, self-heating effects, current collapse, peak electric field distribution, gate leakages, and high ohmic contact resistance. Finally, a number of effective approaches to enhancing the device’s performance are addressed.
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42

Arnaboldi, C., G. Boella, R. Mazza, E. Panzeri y G. Pessina. "A cryogenic set-up for low-frequency noise characterization of electronic devices". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 520, n.º 1-3 (marzo de 2004): 644–46. http://dx.doi.org/10.1016/j.nima.2003.11.366.

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43

Paś, Jacek. "The impact of strong electromagnetic pulses generated in a targeted manner on the process of operation of electronic devices and systems". WUT Journal of Transportation Engineering 124 (1 de marzo de 2019): 141–50. http://dx.doi.org/10.5604/01.3001.0013.7183.

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The article presents the basic issues related to the influence of electromagnetic interference on electronic devices used in transport telematics systems. Classification methods for electronic devices and systems in the aspect of interference of strong high frequency (HF) electromagnetic pulses depend on technical parameters of the interfering signals. Generated, strong electromagnetic pulses in this frequency range may be generated purposefully - as intended signals, e.g. to disable electronic devices and systems used in vast transportation areas. Currently, designers and users of electronic devices and systems do not include the possibility of accumulated interference of strong electromagnetic pulses during operation. Current standard and acts do not provide any requirements determining e.g. resistance and susceptibility to high frequency electromagnetic waves. The author recommends including the selected technical solutions and safety indices in operation. Results and calculations presented in the paper prove that it is possible to defend against the threat upon occurrence of strong electromagnetic pulses, already during the design stage of devices and systems.
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44

Suresh, Vignesh, Meiyu Stella Huang, Madapusi P. Srinivasan y Sivashankar Krishnamoorthy. "High Density Metal Oxide (ZnO) Nanopatterned Platforms for Electronic Applications". MRS Proceedings 1498 (2013): 255–61. http://dx.doi.org/10.1557/opl.2013.344.

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ABSTRACTFabrication methodologies with high precision and tenability for nanostructures of metal and metal oxides are widely explored for engineering devices such as solar cells, sensors, non-volatile memories (NVM) etc. In this direction, metal and metal oxide nanopatterned arrays are the state-of-the-art platforms upon which the device structures are built where the tunable orderly arrangement of the nanostructures enhances the device performance. We describe here a coalition of fabrication protocols that employ block copolymer self-assembly and nanoimprint lithography (NIL) to obtain metal oxide nanopatterns with sub-100 nm spatial resolution. The protocols are easily scalable down to sub-50 nm and below.Nanopatterned arrays of ZnO created by using NIL assisted templates through area selective atomic layer deposition (ALD) and radio frequency (RF) sputtering find application in NVM and photovoltaics. We have employed NIL that produced nanoporous polymer templates using Si molds derived from block copolymer lithography (BCL) for pattern transfer into ZnO. The resulting ZnO nanoarrays were highly dense (8.6 x 109 nanofeatures per cm2) exhibiting periodic feature to feature spacing and width that replicated the geometric attributes of the template. Such nanopatterns find application in NVM, where a change in the density and periodicity of the arrays influences the charge storage characteristics. The above assembly and patterning protocols were employed to fabricate metal-oxide-semiconductor (MOS) capacitor devices for investigating application in NVM. Patterned ZnO nanoarrays were used as charge storage centres for the MOS capacitor devices. Preliminary results upon investigating the flash memory performance showed good flat-band voltage hysteresis window at a relatively low operating voltage due to high charge trap density.
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45

Sokol, Yevgen I., Volodymyr V. Zamaruiev, Volodymyr V. Ivakhno y Yurii S. Voitovych. "Electronic Phase Shifting in Multipulse Rectifier". Electrical, Control and Communication Engineering 12, n.º 1 (1 de julio de 2017): 5–10. http://dx.doi.org/10.1515/ecce-2017-0001.

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Abstract This paper presents a novel converter which can reduce the harmonics like the conventional multipulse converters with input three phase transformer. To reduce total harmonic distortion of input current and improve the weight and size of converters, it is suggested to use multi-pulse rectifiers with an electronic phase shift. The basic module is a 6-pulse rectifier on fully controlled switches with the reverse blocking ability. Switching frequency either coincides or is twice the power frequency. The proposed solutions allow refusing from the electromagnetic phase-shifting devices (power transformers or auto-transformers) and thereby significantly reduce the weight of the device. Unlike power factor correction systems with high-frequency modulation, the proposed converters are significantly different, as they have better electromagnetic compatibility and the virtual absence of dynamic switching losses of power switches.
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46

Choi, Nak-Sun, Gi-Woo Jeung, Jin-Kyu Byun, Heung-Geun Kim y Dong-Hun Kim. "Generalized Continuum Sensitivity Formula for Shape Optimization of High-Frequency Devices in Frequency Domain". IEEE Transactions on Magnetics 47, n.º 5 (mayo de 2011): 1274–77. http://dx.doi.org/10.1109/tmag.2010.2087009.

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47

LIANG, CHUNGUANG, QINGMING ZENG, ZHENCHANG MA, MINGWEN YUAN y JINPING AO. "GaAs HIGH SPEED DEVICES AND CIRCUITS". International Journal of High Speed Electronics and Systems 07, n.º 03 (septiembre de 1996): 447–61. http://dx.doi.org/10.1142/s0129156496000256.

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This paper presents the R&D of GaAs-based high speed devices and circuits at the Hebei Semiconductor Research Institute (HSRI) in China. It is concerned with low noise and medium power GaAs-MESFET MMIC and monolithic laser diode driver and preamplifier for 2.4 Gb/s fiber communication application, GaAs-based high speed digital circuits like single and dual modulus frequency divider, digital/analog convertor, shift register, HEMT and HBT integrated circuits.
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48

Chen, Tianshu, Aiqun Hu y Yu Jiang. "Radio Frequency Fingerprint-Based DSRC Intelligent Vehicle Networking Identification Mechanism in High Mobility Environment". Sustainability 14, n.º 9 (22 de abril de 2022): 5037. http://dx.doi.org/10.3390/su14095037.

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In recent years, Dedicated Short-Range Communication (DSRC) vehicle interconnection technology has achieved mature development and broad applications, which is the key Vehicle to Everything (V2X) technology to realize transport intelligence. However, the openness of wireless transmission and the mobility of wireless terminals cause the identification mechanism of the DSRC system to face serious security threats. A radio frequency fingerprint (RFF)-based identification method can better resist the identity attack and spoofing by extracting the hardware characteristics formed by the differences of electronic components to authenticate different devices. Therefore, in this paper a novel RFF identification mechanism is proposed for IEEE 802.11p protocol-based DSRC intelligent vehicle networking devices suitable for a high mobility environment, in which the preamble field features of physical layer frames are extracted as device fingerprints, and the random forest algorithm and sequential detection method are used to distinguish and authenticate different devices. The experiment and simulation results demonstrate that the identification accuracy rates of the eight DSRC modules in the low-speed LOS and NLOS experimental states and up to 70 km/h high-speed simulations all exceed 99%, illustrating that this method has important application value in the field of identity authentication of V2X devices in high-speed scenarios.
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49

Ye, B., F. Li, D. Cimpoesu, J. B. Wiley, J. S. Jung, A. Stancu y L. Spinu. "Passive high-frequency devices based on superlattice ferromagnetic nanowires". Journal of Magnetism and Magnetic Materials 316, n.º 2 (septiembre de 2007): e56-e58. http://dx.doi.org/10.1016/j.jmmm.2007.02.026.

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50

Farhana, Soheli. "Design of carbon nanotube field effect transistor (CNTFET) small signal model". International Journal of Electrical and Computer Engineering (IJECE) 10, n.º 1 (1 de febrero de 2020): 180. http://dx.doi.org/10.11591/ijece.v10i1.pp180-187.

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<span lang="EN-US">The progress of Carbon Nanotube Field Effect Transistor (CNTFET) devices has facilitated the trimness of mobile phones, computers and all other electronic devices. CNTFET devices contribute to model these electronics instruments that require designing the devices. This research consists of the design and verification of the CNTFET device's small signal model. Scattering parameters (S-parameters) is extracted from the CNTFET model to construct equivalent small model circuit. Current sources, capacitors and resistors are involved to evaluate this equivalent circuit. S-parameters and small signal models are elaborated to analyze using a technique to form the small signal equivalent circuit model. In this design modeling process, at first intrinsic device's Y-parameters are determined. After that series of impedances are calculated. At last, Y-parameters model are transformed to add parasitic capacitances. The analysis result shows the acquiring high frequency performances are obtained from this equivalent circuit.</span>
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