Artículos de revistas: "High dI/dt"

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Przybysz, J. X., D. L. Miller, S. G. Leslie y Y. C. Kao. "High dI/dT light-triggered thyristors". IEEE Transactions on Electron Devices 34, n.º 10 (octubre de 1987): 2192–99. http://dx.doi.org/10.1109/t-ed.1987.23216.

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Hudgins, Jerry L. y William M. Portnoy. "High di/dt Pulse Switching of Thyristors". IEEE Transactions on Power Electronics PE-2, n.º 2 (abril de 1987): 143–48. http://dx.doi.org/10.1109/tpel.1987.4766348.

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3

Gerster, Christian y Patrick Hofer. "Gate-Controlled dv/dt- and di/dt-Limitation in High Power IGBT Converters". EPE Journal 5, n.º 3-4 (enero de 1996): 11–16. http://dx.doi.org/10.1080/09398368.1996.11463368.

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4

Li, Zhiqiang, Lin Zhang, Lianghui Li, Xingliang Xu, Hong Tao, Yinghao Meng, Kun Zhou y Juntao Li. "A SiC gate turn-off thyristor with high di/dt for fast switching-on applications". Semiconductor Science and Technology 36, n.º 12 (1 de noviembre de 2021): 12LT02. http://dx.doi.org/10.1088/1361-6641/ac31e1.

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Abstract High di/dt 4H-silicon carbide (SiC) gate turn-off thyristors (GTOs) are investigated and developed for fast switching-on application. This work has focused on accelerating the turn-on process to improve the di/dt characteristic, and the n-base dopant concentration is carefully designed to increase the injection efficiency of top P+N junction. With reducing n-base dopant concentration from 2.3 × 1017cm−3 to 6.8 × 1016cm−3, the injection efficiency is increased about 18%, and consequently the current rise-up process and subsequent lateral propagation of the anode current are obviously accelerated. Experimental results show that the di/dt capability is greatly improved and a high di/dt of 126 kA cm−2 μs−1 is obtained. The excellent di/dt performance makes the designed 4H-SiC GTO a promising candidate for fast switching-on application.

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5

TANRIVERDİ, OSMAN y DENİZ YILDIRIM. "Independent closed loop control of di/dt and dv/dt for high power IGBTs". Turkish Journal of Electrical Engineering and Computer Sciences 30, n.º 3 (1 de enero de 2022): 487–501. http://dx.doi.org/10.55730/1300-0632.3793.

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6

Tang, Sheng-Yi. "Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers". Electronics 9, n.º 10 (25 de septiembre de 2020): 1573. http://dx.doi.org/10.3390/electronics9101573.

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An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (di/dt) and voltage spikes (dv/dt) in the parasitic inductor of its circuit, resulting in damage to the power switch. To highlight the phenomena of di/dt and dv/dt, this study connected the drain, source, and gate terminals in series with inductors (LD, LS, and LG, respectively). The objective was to explore the effects of di/dt and dv/dt phenomena and operating frequency (fS) on drain-to-source voltage (Vds), drain-to-source current (Ids), and gate-to-source voltage (Vgs). The experimental method comprised two projects: (1) establishment of a measurement system to assess the change of electrical characteristics of the E-mode GaN HEMT and (2) change of the fS and the inductances (i.e., LD, LS, and LG) in the circuit to measure the changes in Vds, Ids, and Vgs, thus summarizing the experimental results. According to the experimental results on electrical characteristics, a gate driver circuit may be designed to drive and protect the E-mode GaN HEMT while being actually applied to a 120-W synchronous buck converter with an output voltage of 12 V and an output current of 10 A.

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Liu, Bo, Ren Ren, Zheyu Zhang, Ben Guo, Fei (Fred) Wang y Daniel Costinett. "Impacts of High Frequency, High di/dt, dv/dt Environment on Sensing Quality of GaN Based Converters and Their Mitigation". CPSS Transactions on Power Electronics and Applications 3, n.º 4 (diciembre de 2018): 301–12. http://dx.doi.org/10.24295/cpsstpea.2018.00030.

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Huang, Jun, Haimeng Huang, Xinjiang Lyu y Xing Bi Chen. "Simulation Study of a Low Switching Loss FD-IGBT With High $dI/dt$ and $dV/dt$ Controllability". IEEE Transactions on Electron Devices 65, n.º 12 (diciembre de 2018): 5545–48. http://dx.doi.org/10.1109/ted.2018.2873598.

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9

Haiyang Wang, Xiaoping He, Weiqing Chen, Binjie Xue y Aici Qiu. "A High-Current High-$di/dt$ Pulse Generator Based on Reverse Switching Dynistors". IEEE Transactions on Plasma Science 37, n.º 2 (febrero de 2009): 356–58. http://dx.doi.org/10.1109/tps.2009.2012553.

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10

Robson, A. E. "Evolution of a z-pinch with constant dI/dt". Nuclear Fusion 28, n.º 12 (1 de diciembre de 1988): 2171–78. http://dx.doi.org/10.1088/0029-5515/28/12/006.

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11

Palawa’ae, Elang Rahma, Rintis Hadiani y Adi Yusuf Muttaqien. "STRATEGI MITIGASI BANJIR BERDASARKAN KAPASITAS SALURAN DRAINASE DI KELURAHAN JAGALAN". Jurnal Riset Rekayasa Sipil 7, n.º 2 (8 de abril de 2024): 94. http://dx.doi.org/10.20961/jrrs.v7i2.85901.

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Flood mitigation is an important step in maintaining the sustainability and safety of urban environments. One key factor that affects the capacity of drainage channels is the flow rate of water through the channels. Therefore, this research aims to assess flood mitigation strategies based on the flow rate in drainage channels using the HSS SCS method. The study was conducted in Jagalan Sub-District, which frequently experiences flooding due to inadequate drainage channel capacity. The HSS SCS method was used to estimate the maximum flow rate that can be accommodated by the drainage channels. Hydrological and topographic data of the study area were collected and analyzed to identify relevant hydrological characteristics and physical parameters.The analysis results showed the planned flood discharge values in Jagalan Sub-District through the Kali Boro Watershed, which were 3.1154 mm3/dt for a 2-year return period, 3.8297 mm3/dt for a 5-year return period, 4.3025 mm3/dt for a 10-year return period, and 4.7501 mm3/dt for a 20-year return period. The existing discharge values were 14.5243 mm3/dt for Surya Road, 19.1823 mm3/dt for Rejosari Road, 8.7376 mm3/dt for Kali Kepunton Road, 66.0338 mm3/dt for Kali Simpang Road, 21.7882 mm3/dt for Bororejo Road, and 42.2077 mm3/dt for Ir. Juanda Road. From these values, it can be concluded that the drainage channels in Jagalan Sub-District have sufficient capacity to accommodate the maximum flow rate during high-intensity rainfall.

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12

Takao, Kazuto, Tsutomu Yatsuo y Kazuo Arai. "High di/dt Switching Characteristics of a SiC Schottky Barrier Diode". IEEJ Transactions on Industry Applications 124, n.º 9 (2004): 917–23. http://dx.doi.org/10.1541/ieejias.124.917.

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13

Liu, Qing, Hongbin Pu, Xi Wang y Jiaqi Li. "A high di/dt 4H-SiC thyristor with ‘-shaped’ n-base". Semiconductor Science and Technology 34, n.º 4 (6 de marzo de 2019): 045005. http://dx.doi.org/10.1088/1361-6641/ab0235.

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14

Wilkening, E. D. y M. Glinkowski. "Spatial and time characteristics of short gap, high di/dt discharges". IEEE Transactions on Plasma Science 21, n.º 5 (1993): 489–93. http://dx.doi.org/10.1109/27.249632.

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15

Hua, Qing, Zehong Li, Xi Qu, Bo Zhang y Yuxiang Feng. "High voltage driver IC with improved immunity to di/dt induced substrate noise". IEICE Electronics Express 12, n.º 7 (2015): 20150189. http://dx.doi.org/10.1587/elex.12.20150189.

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Chen, Wanjun, Chao Liu, Yijun Shi, Yawei Liu, Hong Tao, Chengfang Liu, Qi Zhou, Zhaoji Li y Bo Zhang. "Design and Characterization of High $di/dt$ CS-MCT for Pulse Power Applications". IEEE Transactions on Electron Devices 64, n.º 10 (octubre de 2017): 4206–12. http://dx.doi.org/10.1109/ted.2017.2736529.

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17

Rybalka, S. B., E. A. Kulchenkov, A. A. Demidov, N. A. Zhemoedov, A. Yu Drakin, V. F. Zotin y O. A. Shishkina. "Determination of dV/dt and dI/dt characteristics for high voltage 4H-SiC Schottky diodes with different types of metal-polymeric packages". Journal of Physics: Conference Series 1679 (noviembre de 2020): 022045. http://dx.doi.org/10.1088/1742-6596/1679/2/022045.

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18

Zhang, Shao Rong, Zhi Li y Ai Jun Zhu. "FPGA-Based High Precision and Low EMI Switching Power Supply Design". Applied Mechanics and Materials 496-500 (enero de 2014): 1442–47. http://dx.doi.org/10.4028/www.scientific.net/amm.496-500.1442.

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We analyze the reasons why DC-DC switching power supply generates the electromagnetic interference (EMI), and through the FPGA control the digital-to-analog converter (DAC) to output the pulse width modulation (PWM) signal with high precision and slew rate controlled, the slew rates of the voltage and current of external N-channel MOSFET are controlled. So, dv/dt and di/dt can be decreased in the circuit; and the ripple noise and EMI of switching power supply are reduced vastly in this way. Experimental results show that the ripple noise of switching power supply could be reduced by 80% and EMI reduced 15dBμV. The experiment has proved that we can cut down the ripple noise and EMI of switching power supply by lessening the slew rates of the voltage and current of MOSFET switching tube.

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19

O'Brien, Heather, William Shaheen, Aderinto Ogunniyi, Charles Scozzie, Q. Jon Zhang, Anant K. Agarwal y Victor Temple. "High dI/dt Pulse Switching of 1.0 cm² SiC GTOs". Materials Science Forum 717-720 (mayo de 2012): 1155–58. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1155.

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The Army Research Laboratory has collaborated with Cree, Inc. and Silicon Power Corp. to develop 9 kV-blocking, 1.0 cm2Super-GTOs. In this study, several 1.0 cm2GTOs were individually switched up to 6.0 kA in a low-inductance, highdI/dt(2.1 kA/µs) circuit to evaluate turn-on delay and optimize the gate control. Turn-on delay was evaluated relative to gate drive current, and the delay was reduced by 1.1 µs when gate amplitude was increased from 1 A to 8 A. Increasing gate current delivered to each GTO also successfully reduced variation in turn-on delay from device to device by at least 50%, and mitigated mismatch in turn-on between pairs of GTOs switched in parallel. As silicon carbide material processing and device development continue to evolve, the ultimate solution will be to reduce remaining material defects and to control minority carrier diffusion length through more uniform doping across the wafer. These steps will enable modules of parallel GTOs to perform at maximum capability.

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20

Zeng, Xiang-jun, Xu Yang y Zhao-an Wang Xi'an. "Analysis of Capacitive and Inductive Coupling inside Hybrid Integrated Power Electronic Module". Journal of Microelectronics and Electronic Packaging 1, n.º 3 (1 de julio de 2004): 169–75. http://dx.doi.org/10.4071/1551-4897-1.3.169.

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Electromagnetic compatibility has to be given enough attention in the design of hybrid Integrated Power Electronic Module (IPEM) due to the sharply decreased distances between power devices and the control/driving circuits as compared to such distances for conventional power electronic equipment built with discrete devices. The high dν/dt, di/dt and high frequency parasitic ringing emanating from the switching circuit can cause serious EMI within the control/driving circuit due to cross-coupling. This paper analyzes the capacitive and inductive cross-coupling problems inside an IPEM. Finite Element Method (FEM) is used to extract the mutual capacitances between the metal bars in the model. Then the influence of dν/dt can be estimated. The high frequency circulating current in the bridge circuits is also investigated since it causes magnetic interference due to mutual inductance coupling. The mutual inductance is calculated with the simplified Partial Element Equivalent Circuit (PEEC) approach and image method. The experiment validates the effectiveness of this evaluation. In the end, the electromagnetic shielding is discussed.

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21

Liu, Liming, Zhao Yuan, Lixue Chen y Shan Liu. "Experimental investigation on the velocity of cathode spots in a vacuum arc with high di/dt". Journal of Physics D: Applied Physics 55, n.º 19 (14 de febrero de 2022): 195202. http://dx.doi.org/10.1088/1361-6463/ac507e.

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Abstract With the development of DC transmission and aerospace technology, the demands on the breaking capacity of vacuum circuit breakers (VCBs) under high d i d t condition are getting higher and higher. The breaking capacity of VCBs is determined by cathode spots, which provide electrons and metal vapor to maintain the arc. In this paper, the experiments of cathode spot observation were carried out based on the detachable vacuum interrupter and the cup-shaped axial magnetic field contacts. The images of cathode spot distribution were obtained by an ultra high-speed camera. In the initial expansion stage of arcing, it was discovered that the distribution of cathode spots is ring-shaped and symmetrical. The initial expansion velocity of cathode spot ring is approximately proportional to the value of d i d t and is independent of frequency. During the whole arcing process, the expansion velocity of cathode spot ring rises first and then drops with arcing time. The effects of the magnetic field and metal vapor density on the expansion process of cathode spot were analyzed. Based on the experimental conditions and results, the values of magnetic field and metal vapor density were calculated which can reasonably explain the variation of expansion velocity of cathode spot.

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22

Letellier, Adrien, Maxime R. Dubois, Joao Pedro F. Trovao y Hassan Maher. "Calculation of Printed Circuit Board Power-Loop Stray Inductance in GaN or High di/dt Applications". IEEE Transactions on Power Electronics 34, n.º 1 (enero de 2019): 612–23. http://dx.doi.org/10.1109/tpel.2018.2826920.

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23

Putri, Fianita Eka, Monica Feby Zelvia, Nadya Rosma Anggi Cinta Kumala y Khusaini Khusaini. "Metode Design Thinking pada Perancangan Media Pembelajaran Ular Tangga IPA (ULTAPA) sebagai Peluang Peningkatan Literasi dan Numerasi Siswa SMP". Journal of Innovation and Teacher Professionalism 2, n.º 1 (30 de abril de 2024): 55–64. http://dx.doi.org/10.17977/um084v2i12024p55-64.

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Rendahnya minat belajar dan kemampuan intelegensi yang kurang berkembang pada peserta didik mencerminkan indikasi lemahnya literasi dan numerasi pada peserta didik. Guru hendaknya mencari tahu kebutuhan belajar siswa yang dapat digunakan untuk menguatkan literasi dan numerasi peserta didik melalui metode Design thinking (DT). DT adalah suatu metodologi desain untuk mengatasi masalah dengan cara memahami kebutuhan manusia yang terlibat dari segi perancangan tatap muka, terdapat lima tahap Design Thinking yaitu, Empathize, Define, Ideate, Prototype, dan Test. penerapan Design Thinking (DT) yang digunakan untuk mendapatkan media yang paling efektif dalam mengatasi masalah literasi dan numerasi pesertsa didik kelas IX di SMPN 28 Malang. Hasilnya diketahui media Ular Tangga IPA (ULTAPA) memungkinkan diterapkan guru untuk meningkatkan kemampuan literasi dan numerasi peserta didik kelas IX di SMPN 28 Malang. Kata kunci: design thinking, media ULTAPA, literasi dan numerasi Design Thinking Method in the Design of Learning Media Ular Tangga IPA (ULTAPA) as an Opportunity to Improve Literacy and Numeracy of Junior High School Students Low interest in learning and underdeveloped intelligence abilities in students indicate weak literacy and numeracy in students. Teachers should find out students' learning needs which can be used to strengthen students' literacy and numeracy through the Design Thinking (DT) method. DT is a design methodology for solving problems by understanding the needs of the humans involved in terms of face-to-face design. There are five stages of Design Thinking, namely, Empathize, Define, Ideate, Prototype, and Test. application of Design Thinking (DT) which is used to obtain the most effective media in overcoming the literacy and numeracy problems of class IX students at SMPN 28 Malang. The results show that the Science Snakes and Ladders media (ULTAPA) allows teachers to apply it to improve the literacy and numeracy skills of class IX students at SMPN 28 Malang. Keyword: design thinking, ULTAPA media, literacy and numeracy

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24

Zotin, Vitaliy, Alexander Drakin, Sergei Rybalka, Andrey Demidov y Evgeniy Kulchenkov. "Measuring complex for determining the characteristics of high-voltage silicon carbide Schottky diodes in impulse modes". Applied Physics, n.º 6 (28 de diciembre de 2021): 67–73. http://dx.doi.org/10.51368/1996-0948-2021-6-67-73.

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This paper describes a developed automated research measuring complex that allows one to determine the parameters of currents, voltages and power of silicon carbide Schottky diodes when applied reverse voltage impulses with amplitudes from 400 to 1000 V. The research measuring complex was tested on DDSH411A91 («GRUPPA KREMNY EL») and C3D1P7060Q (Cree/Wolfspeed) silicon carbide Schottky diodes and allows to determine their maximum values of the rate of rise of reverse voltage dV/dt (877 V/ns and 683 V/ns). Also, the maximum values of the current rise rate dI/dt were determined for DDSH411A91 (3.24 A/ns) and C3D1P7060Q (3.72 A/ns) diodes. For the first time it was established that, when a reverse voltage impulse with an amplitude of 1000 V is applied, the maximum values of instantaneous fullpower reach 1419 VA for the DDSH411A91 diode and 1638 VA for the C3D1P7060Q diode.

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25

Huo, Tianchen, Wenrong Yang, Yiwei Qiao, Haojie Zhang y Guohang Chen. "Study on EMI suppression of a high–low voltage DC/DC converter in electric vehicle by periodic frequency modulation". International Journal of Applied Electromagnetics and Mechanics 70, n.º 4 (30 de noviembre de 2022): 479–90. http://dx.doi.org/10.3233/jae-210240.

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The high–low voltage DC/DC converter of electric vehicle produces high du∕dt and di∕dt due to the high operating frequency of the power devices, which introduce nonnegligible electromagnetic interference. In this paper, the power devices control signals of the high–low voltage DC/DC converter were modulated by periodic signals, the influence of the modulation frequency, the maximum frequency deviation and the modulation waveform on the conducted electromagnetic interference were analyzed. Combined with the published data of the phase-shifted full-bridge circuit of the high–low voltage DC/DC converter, the spread-spectrum modulation control signal model and power circuit model were established in MATLAB/Simulink and PSIM, and co-simulations were carried out with different modulation parameters. The interference suppression effects of three test frequency bands required by CISPR 25 were tested; the optimal parameters for the periodic frequency modulation of the high–low voltage DC/DC converter in electric vehicle were proposed.

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26

Tamrakar, Naresh Kazi y Dharmendra Khakurel. "Lithologic and morphometric characteristics of the Chure River Basin, Central Nepal". Bulletin of the Department of Geology 15 (21 de enero de 2013): 35–48. http://dx.doi.org/10.3126/bdg.v15i0.7416.

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The Chure River Basin (CRB) is a small basin (width 5.75 km, length 9.74 km, perimeter 32.35 km and area 35.23 km2) with three sub-watersheds, and is crossed by the Tribhuvan Highway that may be threatened by riverine and allied processes. The geology and morphometry of the basin were studied to search for status of the basin development andriver dynamism. The Chure River is a sixth order river fed by rainstorm, and has length ratio of 2.79, indicating nearly three times the average length of its fifth order segment, showing notable competency. The mean bifurcation ratio of the Chure River is 3.20, showing immature nature of the CRB. Drainage texture (DT) varies from moderate (0.64–0.96) to very fine (0–0.32). The Chure River is sinuous (K =1.18).The relative relief (RR) is moderately low (15–30) to moderately high (120–240) and dissection index (DI) is moderate (0.2–0.3) to high (0.3–0.4). The CRB carries varied lithology; gravelly to coarse sandy and medium sandy and muddy, from the north to the south extension of the basin. Fine to very fine DT found in large areas because of loosely consolidated and soft lithology. Even where rocks are stiff, the presence of discontinuity has perhaps influenced the DT. Very fine to fine DT coupled with elongate nature of the basin (as indicated by low value of form factor, 0.37) is vulnerable to greater competency of the river during high rainfall.RR slope and DI are found to be high in the cliff- forming lithology (stiff and well cemented), and low in other areas. High dissection, high slopes and high relief show active and immature nature of the CRB, indicating susceptibility of further incision of the Siwalik Hills and aggravation of erosion and slope movements by the immature rivers in the CRB. Presence of knick points along the river profile reflects affinity of the river to incision. The sinuosity, radius of curvature, and bifurcation ratio, all indicate immaturity of the basin. The hypsometric analysis indicates inverse relationship between the elevation and the cumulative %area, showing active erosional condition of the basin. DOI: http://dx.doi.org/10.3126/bdg.v15i0.7416 Bulletin of the Department of Geology, Vol. 15, 2012, pp. 35-48

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27

Ogunniyi, Aderinto, James Schrock, Miguel Hinojosa, Heather O’Brien, Aivars J. Lelis, Stephen Bayne y Sei Hyung Ryu. "Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs". Materials Science Forum 897 (mayo de 2017): 575–78. http://dx.doi.org/10.4028/www.scientific.net/msf.897.575.

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The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determine by the spreading velocity, which depends on applied gate current, applied anode current density, minority carrier lifetime, and both the gate base-width and the drift region of the thyristor. The impact of device parameters on switching performance is discussed in this work.

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Dastugue, Nicole, Stefan Suciu, Geneviève Plat, Frank Speleman, Hélène Cavé, Sandrine Girard, Emmanuelle Delabesse et al. "In Childhood B-Lineage Acute Lymphoblastic Leukemia (B-ALL) with Hyperdiploidy >50 Chromosomes, Patients with 58 to 66 Chromosomes Have 99% EFS At 6-Year Follow-up: Results of the EORTC CLG 58951 Trial". Blood 118, n.º 21 (18 de noviembre de 2011): 565. http://dx.doi.org/10.1182/blood.v118.21.565.565.

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Abstract Abstract 565FN2 Hyperdiploidy >50 chromosomes (HD>50) has long been recognized as favorable group in childhood B-ALL but there is still debate on the factors contributing to heterogeneity of prognosis observed within this entity. Better outcome has been reported for patients (pts) presenting DNA index (DI) >1.16 (Blood 1985;10:213), ≥56 chromosomes (Leukemia 1996;10:213), triple trisomies (TT) +4,+10,+17, double trisomies +4,+10 (Leukemia 2005;19:734) and trisomy 18 (Blood 2003;102:2756) but there is no consensus between the reports and these factors are differently applied in current protocols. We studied these factors in the pts with HD>50 enrolled in the ALL 58951 trial, BFM related. HD>50 were detected by cytogenetics (karyotype/FISH) and/or flow cytometry (DI). In order to analyze the outcome of HD>50 itself, pts with recurrent unfavorable translocations t(9;22), 11q23/MLL+, with t(1;19), t(12;21) or Down Syndrome were excluded, as well as near-triploidies/duplication of hypodiploidies 30–39 chromosomes. Pts were stratified into 4 risk groups (VLR/AR1/AR2/VHR) according to DI, Modal Number of Chromosomes (MNC), WBC, CNS/gonadal involvement, presence of VHR features (unfavorable translocations, poor response to prephase, residual disease (MRD) at the end of induction >10-2). VLR was defined as: DI>1.16 or MNC>50, WBC<10×109/L, no CNS/gonadal involvement and no VHR features. Overall Results: Out of 1651 B-lineage pts registered in the 58951 study over a 10-year period (1998-2008), a total of 541 pts had HD>50. Median age was 3 years and median WBC was 5.6×109/L. After prephase, 3% (N=17) were poor responders; initial risk group distribution into VLR/AR1/AR2/VHR was 45%/47%/5%/3%. After induction, 540 (99.8%) reached complete remission, 455 of whom had an MRD evaluation: MRD<10-3 (N=416;91%), MRD <10-2 and >10-3 (N=26;6%) or MRD≥10-2 (N=13;2%). At median follow-up of 6 years, 48 pts (9%) relapsed, 22 pts (4%) died and 6 (1%) died without relapse. The 6-yr EFS was 89% (SE=1.5%). MNC was assessed in 446 pts (82%) with successful karyotypes, MNC ranged from 51 to 66 chromosomes and peaked at 55–56; 87 pts had 51 to 53 chromosomes (HD51-53), 258 pts had 54 to 57 (HD54-57) and 101 pts had ≥58 chromosomes (HD≥58). In these 3 groups, VLR regimen was given to 16%, 50% and 64% respectively. Structural abnormalities were detected in 46% of pts and associated with all MNCs. DI, assessed in 460 pts was <1.16 (N=146), 1.16 to 1.24 (N=240) and ≥1.24 (N=104). There was no strict overlap between the HD≥58 and DI ≥1.24 groups. Prognostic Factors: The only significant prognostic factors for EFS were MNC, DI, TT, DT and MRD. EFS was clearly improved (p<0.001) when the MNC was ≥58 chromosomes: 6-yr EFS was 80% (HD51-53) vs 89% (HD54-57) vs 99% (HD'58). In the last group, all pts had a good response to prephase, only 3 pts had detectable MRD after induction (1pt: MRD>10-2 and 2 pts: MRD≥10-3) and only 1 pt (MNC=58) relapsed. No specific profile of chromosome gains was identified in HD ≥58 since all chromosomes contributed to tri/tetrasomies, except chromosome 1. Likewise, the higher the DI the better the outcome (p=0.01): 6-yr EFS was 83% (DI<1.16) vs 90% (DI≥ 1.16 and <1.24) vs 95% (DI ≥1.24). TT were detected in 168 out of 468 pts, and DT in 242 out of 466 pts. There was no overlap with HD ≥58 since TT and DT were distributed from 52 to 66 chromosomes. One third of TT and of DT had MNC≥58. TT and DT were also of prognostic importance for outcome: the 6-yr EFS rate was 96% (TT) vs 86% (non-TT) (p=0.005) and 94% (DT) vs 84% (non-DT) (p=0.003). A hierarchical variable based on presence of HD≥58, TT or DT showed that HD ≥58 (N=101; 6-yr EFS: 99%) group had a better outcome than TT without HD≥58 (N=115; 6-yr EFS: 93%) and DT without HD≥58 and without +17 (N=55; 6-yr EFS: 84%) groups (p=0.04). We can infer from our results that the good outcome observed for all of the TT and DT was partially due to their association with HD '58. Consequently, the best indicator for excellent outcome was a high MNC (≥58 chromosomes). From our 58951 trial, we can assume that among children with B-ALL and HD>50, those with ≥58 chromosomes, stand every chance of being cured. Our results stress the necessity of karyotype for identifying them since this is the only way to assess MNC. They can also be detected (less accurately) by DI (DI ≥1.24). Therefore, both MNC and DI should be used for stratifying pts in the very low risk groups. Disclosures: No relevant conflicts of interest to declare.

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Et. al., Mr A. Clement Raj,. "Performance Evaluation of Symmetrical Current Source Multilevel Inverter". Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, n.º 10 (28 de abril de 2021): 5598–607. http://dx.doi.org/10.17762/turcomat.v12i10.5370.

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In this paper proposes a Current Source Multilevel Inverter (CSMLI) with a single rating inductor topology. The multilevel inverters are generally acquainted with power converter's applications because of decreased dv/dt, di/dt stress, and extremely efficient for minimising harmonic distortion in the both output voltage and current. The proposed nine-level current source inverter has analyses under symmetrical operation, and their operation are compared using PI and Fuzzy PI controllers with multicarrier PWM topology. PV utilized as a DC source, photovoltaic energy is an environmentally friendly energy with high potential, simple construction, maintenance, dependability and long life. MATLAB/Simulink simulation has been made for the proposed converter to get its exhibition measures. Some test results are given to confirm the presented Current Source Multilevel Inverter.

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Tong, Xin, Siyang Liu, Weifeng Sun, Lanlan Yang, Zhiyuan Xu, Qixiang Wu, Xiaoshuang Zhang et al. "SJ-MOSFET with wave-type field limiting ring for high di/dt robustness of body diode reverse recovery". Solid-State Electronics 148 (octubre de 2018): 70–74. http://dx.doi.org/10.1016/j.sse.2018.07.007.

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Kurnia, Rahmat, Siska Febriyanti S y Siska Erianti. "MANAJEMEN RISIKO BERBASIS ISO 31000:2018 PADA USAHA PEMBIBITAN DT. MARUHUN". Jurnal Manajemen dan Profesional 4, n.º 2 (30 de noviembre de 2023): 146–60. http://dx.doi.org/10.32815/jpro.v4i2.1681.

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Tujuan penelitian ini untuk mengetahui manajemen risiko yang diterapkan pada usaha pembibitan Dt. Maruhun di Nagari Tabek Patah Kecamatan Salimpaung. Jenis penelitian ini adalah penelitan adalah penelitian lapangan (field research) dengan metode penelitian pendekatan kualitatif. Teknik pengumpulan data yang dilakukan dengan cara observasi, wawancara dan dokumentasi. Sedangkan teknis analisis data adalah dengan menggunakan metode penilaian risiko atau risk asessment ISO 31000: 2018. Hasil penelitian menunjukkan bahwa terdapat 2 kejadian risiko dengan Kriteria Crisis Risk yaitu penjualan tidak stabil dan tempat penyimpanan bibit penuh. Kemudian terdapat 6 kejadian risiko dengan Kriteria High Risk yaitu kualitas bibit menurun, bibit menguning, bibit busuk atau layu, daun bibit rontok dan layu, pencurian, dan bibit menumpuk. Selain itu juga terdapat 2 kejadian risiko dengan Kriteria Medium Risk yaitu bibit tidak tumbuh dan balik modal atau rugi.

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32

Nathanson, David A., Amanda L. Armijo, Michelle Tom, Zheng Li, Elizabeth Dimitrova, Wayne R. Austin, Julian Nomme et al. "Co-targeting of convergent nucleotide biosynthetic pathways for leukemia eradication". Journal of Experimental Medicine 211, n.º 3 (24 de febrero de 2014): 473–86. http://dx.doi.org/10.1084/jem.20131738.

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Pharmacological targeting of metabolic processes in cancer must overcome redundancy in biosynthetic pathways. Deoxycytidine (dC) triphosphate (dCTP) can be produced both by the de novo pathway (DNP) and by the nucleoside salvage pathway (NSP). However, the role of the NSP in dCTP production and DNA synthesis in cancer cells is currently not well understood. We show that acute lymphoblastic leukemia (ALL) cells avoid lethal replication stress after thymidine (dT)-induced inhibition of DNP dCTP synthesis by switching to NSP-mediated dCTP production. The metabolic switch in dCTP production triggered by DNP inhibition is accompanied by NSP up-regulation and can be prevented using DI-39, a new high-affinity small-molecule inhibitor of the NSP rate-limiting enzyme dC kinase (dCK). Positron emission tomography (PET) imaging was useful for following both the duration and degree of dCK inhibition by DI-39 treatment in vivo, thus providing a companion pharmacodynamic biomarker. Pharmacological co-targeting of the DNP with dT and the NSP with DI-39 was efficacious against ALL models in mice, without detectable host toxicity. These findings advance our understanding of nucleotide metabolism in leukemic cells, and identify dCTP biosynthesis as a potential new therapeutic target for metabolic interventions in ALL and possibly other hematological malignancies.

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Lee, Gi-Young, Min-Shin Cho y Rae-Young Kim. "Lumped Parameter Modeling Based Power Loop Analysis Technique of Power Circuit Board with Wide Conduction Area for WBG Semiconductors". Electronics 10, n.º 14 (18 de julio de 2021): 1722. http://dx.doi.org/10.3390/electronics10141722.

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With the development of wide-bandgap (WBG) power semiconductor technology, such as silicon carbide (SiC) and gallium nitride (GaN), the technology of power converters with high efficiency and high-power density is rapidly developing. However, due to the high rate-of-rise of voltage (dv/dt) and of current (di/dt), compared to conventional Si-based power semiconductor devices, the reliability of the device is greatly affected by the parasitic inductance component in the switching loop. In this paper, we propose a power loop analysis method based on lumped parameter modeling of a power circuit board with a wide conduction area for WBG power semiconductors. The proposed analysis technique is modeled based on lumped parameters, so that power loops with various current paths can be analyzed; thus, the analysis is intuitive, easy to apply and realizes dynamic power loop analysis. Through the proposed analysis technique, it is possible to derive the effective parasitic inductance component for the main points in the power circuit board. The effectiveness of the lumped parameter model is verified through PSpice and Ansys Q3D simulation results.

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Delardi, Ahmad Fikri, Siddhi Saputro, Warsito Atmodjo, Heriyoso Setyono, Rikha Widiaratih y Aris Ismanto. "Studi Sebaran Material Padatan Tersuspensi Di Muara Sungai Sambong, Kabupaten Batang". Indonesian Journal of Oceanography 1, n.º 1 (7 de noviembre de 2019): 70–79. http://dx.doi.org/10.14710/ijoce.v1i1.6265.

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Muara Sungai Sambong berpotensi mengalami pendangkalan akibat pengendapan sedimen tersuspensi. Kali Sambong terus mengalami pendangkalan karena sedimentasi dan sampah sekaligus alur menuju muara pantai yg mengalami penyempitan. Tujuan dari penelitian ini adalah untuk mengetahui pengaruh arus dalam persebaran MPT di Muara Sungai Sambong, Kabupaten Batang, Jawa Tengah. Penelitian dimulai dari tahap pengambilan data di lapangan pada tanggal 7-9 Maret 2017 di Perairan Muara Sungai Sambong, Batang dan tahap pengolahan serta analisis data hasil pengukuran lapangan. Materi yang digunakan meliputi data primer berupa sampel air laut serta data lapangan kecepatan dan arah arus saat pasang maupun surut selama 3 hari, sedangkan data sekunder berupa data pasang surut bulan Maret 2017 dan citra GeoEye tahun 2017. Penelitian ini menggunakan metode analisis kuantitatif model, penentuan lokasi pengambilan sampel air menggunakan metode purposive sampling, pengambilan data arus menggunakan metode lagrange. Model matematik yang digunakan adalah Mike21 Flow Model FM untuk pola arus dan metode interpolasi sebaran MPT dengan ArcGIS menggunakan metode Natural Neighbor. Berdasarkan hasil dari penelitian ini menunjukkan bahwa kecepatan arus pada kondisi pasang menuju surut memiliki nilai antara 0,168 m/dt – 1,111 m/dt, sedangkan pada kondisi surut menuju pasang memiliki nilai antara 0,164 m/dt – 1,25 m/dt. Nilai material padatan tersuspensi pada kondisi pasang menuju surut memiliki nilai antara 0,08 – 0,29 g/L, sedangkan pada kondisi surut menuju pasang memiliki nilai antara 0,06 – 0,35 g/L. Berdasarkan hasil penelitian dapat disimpulkan bahwa pengaruh arus terhadap sebaran konsentrasi MPT, cukup tinggi. Sambong Estuary potentially suffering to shallow as the result of suspended sedimentation. Sambong River is shallowing due to sedimentation and debris which also narrowing the river channel. The purpose of this study is to observe the effect of current to Total Suspended Solid (TSS) distribution in Sambong Estuary, Batang Regency, Central Java. The study was begin from field collecting data on 7-9 March 2017 in Sambong Estuary waters, Batang and then the data proceed and analized. Material of this study was consist of primary data, which are seawater sampel, current velocity and direction while tide and neap, and secondary data, which are tidal data on March 2017 and GeoEye image on 2017. Quantitative model analysis was used in this study, purposive sampling method was used on collecting the water sampel and lagrange method was used for current data collecting. Mike21 Flow Model FM was used for current model and TSS interpolation method was using ArcGIS by Natural Neighbor method. The result of this study showed that current velocity in tide to neap condition was 0.168 m/s – 1.111 m/s, while in neap to tide condition was 0.164 m/s – 1.25 m/s. Total Suspended Solid value tide to neap condition was 0.08 g/L – 0.29 g/L, while in neap to tide condition was 0.06 g/L – 0.35 g/L. According to this study the effect of current to TSS was high.

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Luo, Haoze, Wuhua Li y Xiangning He. "Online High-Power P-i-N Diode Chip Temperature Extraction and Prediction Method With Maximum Recovery Current di/dt". IEEE Transactions on Power Electronics 30, n.º 5 (mayo de 2015): 2395–404. http://dx.doi.org/10.1109/tpel.2014.2342377.

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Liu, Chao, Wanjun Chen, Yijun Shi, Hong Tao, Qijun Zhou, Huiling Zuo, Bin Qiao et al. "A Novel Insulated Gate Triggered Thyristor With Schottky Barrier for Improved Repetitive Pulse Life and High-di/dt Characteristics". IEEE Transactions on Electron Devices 66, n.º 2 (febrero de 2019): 1018–25. http://dx.doi.org/10.1109/ted.2018.2887137.

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37

Beye, Mamadou Lamine, Thilini Wickramasinghe, Jean François Mogniotte, Luong Viêt Phung, Nadir Idir, Hassan Maher y Bruno Allard. "Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off". Electronics 10, n.º 2 (7 de enero de 2021): 106. http://dx.doi.org/10.3390/electronics10020106.

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The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for improving the safe operation of a switching cell. In an application of open-loop AGVC, the switching speeds vary significantly with the operating point of the GaN HEMT on either or both current and temperature. A closed-loop AGVC is proposed to operate the switches at a constant speed over different operating points. In order to evaluate the reduction in the electromagnetic disturbances, the common mode currents in the system were compared using the active and a standard gate voltage control (SGVC). The closed-loop analysis carried out in this paper has shown that discrete component-based design can introduce limitations to fully resolve the problem of high switching speeds. To ensure effective control of the switching operations, a response time fewer than 10 ns is required for this uncomplex closed-loop technique despite an increase in switching losses.

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38

Beye, Mamadou Lamine, Thilini Wickramasinghe, Jean François Mogniotte, Luong Viêt Phung, Nadir Idir, Hassan Maher y Bruno Allard. "Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off". Electronics 10, n.º 2 (7 de enero de 2021): 106. http://dx.doi.org/10.3390/electronics10020106.

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The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for improving the safe operation of a switching cell. In an application of open-loop AGVC, the switching speeds vary significantly with the operating point of the GaN HEMT on either or both current and temperature. A closed-loop AGVC is proposed to operate the switches at a constant speed over different operating points. In order to evaluate the reduction in the electromagnetic disturbances, the common mode currents in the system were compared using the active and a standard gate voltage control (SGVC). The closed-loop analysis carried out in this paper has shown that discrete component-based design can introduce limitations to fully resolve the problem of high switching speeds. To ensure effective control of the switching operations, a response time fewer than 10 ns is required for this uncomplex closed-loop technique despite an increase in switching losses.

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39

Liu, Xinzhi, Suhaidi Shafie, Mohd Amran Mohd Radzi y Norhafiz Azis. "SPICE Simulation Assisted-Dynamic Rds(on) Characterization in 200V Commercial Schottky p-GaN HEMTs Under Unstable Phases". Journal of Physics: Conference Series 2841, n.º 1 (1 de septiembre de 2024): 012001. http://dx.doi.org/10.1088/1742-6596/2841/1/012001.

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Abstract This paper presents a comprehensive analysis of dynamic and static RDS(ON) in Schottky p-GaN High Electron Mobility Transistors (HEMTs), highlighting the impact of off-state and hot electron trapping on device performance. The authors observed significant hysteresis in the transfer characteristics of a 200V commercial Schottky p-GaN, attributing this to charge trapping effects. A novel experimental setup, employing a multi-pulse test synchronous buck converter circuit with additional gate control and a clamping circuit, enabled precise characterization of dynamic RDS(ON) under varying conditions, including unstable phases with overcurrent. This method effectively mimics solar PV input scenarios, exposing the device to high dv/dt and di/dt stresses, which are critical for evaluating GaN device stability under transient conditions. This research also reveals that increased gate resistance reduces energy losses, challenging traditional expectations by demonstrating the nuanced gate charge dynamics of GaN HEMTs. This study overall contributes to the understanding of GaN device behavior, offering a novel approach for accurately characterizing dynamic RDS(ON) under unstable stages, furtherly advances the GaN device in complex renewable energy power converter applications.

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40

Malhan, Rajesh Kumar, S. J. Rashid, Mitsuhiro Kataoka, Yuuichi Takeuchi, Naohiro Sugiyama, F. Udrea, G. A. J. Amaratunga y T. Reimann. "Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET". Materials Science Forum 600-603 (septiembre de 2008): 1067–70. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1067.

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Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design.

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41

Shabari, Anugrah Riskel, Alfi Satriadi Satriadi y Warsito Atmodjo. "Padatan Tersuspensi yang Dipengaruh oleh Proses Pasang Surut di Perairan Kaliboyo, Kabupaten Pekalongan". Journal of Marine Research 8, n.º 4 (31 de octubre de 2019): 393–401. http://dx.doi.org/10.14710/jmr.v8i4.24775.

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ABSTRAK: Perairan Kaliboyo merupakan daerah yang berpotensi mengalami pendangkalan akibat pengendapan sedimen tersuspensi. Potensi dari pengdangkalan tersebut dapat diketahui dengan mengetahui nilai konsentrasi dan sebaran Material Padatan Tersuspensi (MPT). Konsentrasi MPT yang tinggi di laut dipengaruhi oleh arus yang dibangkitkan oleh pasang surut. Tujuan dilakukannya penelitian ini adalah untuk mengetahui pengaruh arus laut terhadap konsentrasi dan sebaran MPT di Perairan Kaliboyo Kabupaten Batang, Jawa Tengah. Materi yang digunakan meliputi utama berupa data sampel air dan arus laut sedangkan data pendukung berupa data pasang surut BMKG, dan debit sungai PSDA Jawa Tengah tahun 2017, bathimetri hasil pemeruman tanggal 15 September 2018, dan peta RBI 2017. Penelitian ini menggunakan metode kuantitatif yang bersifat eksploratif, penentuan lokasi pengambilan sampel air menggunakan metode purposive sampling, pengambilan data arus laut menggunakan metode lagrange. Model matematik yang digunakan adalah Flow Flexible Mesh Model 2D untuk arah pergerakan arus dan Inverse Distance Weighted untuk interpolasi sebaran MPT. Berdasarkan hasil dari penelitian menunjukkan bahwa nilai material padatan tersuspensi pasang menuju surut pada kedalaman 0.2d memiliki nilai antara 0,027 g/l – 0.114 g/l, kedalaman 0.6d memiliki nilai antara 0,030 g/l – 0,114 g/l, dan kedalaman 0.8d memiliki nilai antara 0,038 g/l – 0,118 g/l. Kecepatan arus memiliki nilai antara 0.0181 m/dt – 0.2011 m/dt dengan arah dominan ke arah barat laut. Berdasarkan hasil penelitian dapat disimpulkan bahwa konsentrasi tertinggi material padatan tersuspensi berada di muara sungai dan daerah yang masih dipengaruhi oleh sungai dan mengecil menuju laut lepas.ABSTRACT: Kaliboyo River is an area that has potential by silting due to the deposition of suspended sediments. The potential of this silting can be known by understanding the value of concentration and the distribution of suspended sediment load. The high suspended sediment load concentration in the ocean is influenced by currents generated by tides. The purpose of this research the effect of ocean currents on the concentration and distribution of suspended sediment load in the Kaliboyo River of Batang Regency, Central Java. The material used includes the main data such as water sample, and current. while the supporting data consists of tides data from BMKG, and river discharge from Central Java PSDA in 2017, bathimetry results from September 15, 2018, and RBI 2017 map This study uses quantitative methods that are explorative in nature, taking the location of sampling using the purposive sampling method, taking ocean currents using the lagrange method. The mathematical model used is 2D Flow Flexible Mesh Model for flow direction and Inverse Distance Weighted for TSS distribution interpolation. Based on the results of the study, it was found that the value of the tide suspended solids to tide at the 0.2d level had a value between 0.027 g / l - 0.114 g / l, 0.6d depth had a value between 0.030 g / l - 0.114 g / l, and 0.8d has a value between 0.038 g / l - 0.118 g / l. The current velocity has a value between 0.0181 m / dt - 0.2011 m / dt with the dominant direction to the northwest. Based on the results of the study it can be concluded that the highest concentration of total suspended solid in the estuary of the river and the area where still influeced by the river and shrinking towards the open sea.

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Vivek, Kema. "A High Power Density Converter with a Continuous Input Current Waveform for Satellite Power Applications". International Journal for Research in Applied Science and Engineering Technology 9, n.º VI (30 de junio de 2021): 4523–27. http://dx.doi.org/10.22214/ijraset.2021.35978.

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Conventional Active Clamp-Forward topology is studied for a satellite converter owing to its comparitively simple structure, minimum number of components and fine clamping capability concerning its switch voltage stress. However, it has a high switch voltage stress,a high di/dt level and has pulsating input current shape. These are disadvantageous with respect to the EMI filter size and high input voltage converter applications.To get the better of these drawbacks, a new ACF topology with a continuous input current waveform is proposed . By this proposed waveform ,the voltage stresses on the main switches are relieved. This is crucial reliability of satelite FET switches, by utilizing a two series connected structure. These conditions will allow the proposed converter to serve as a high input voltage, high power density satellite converter.

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43

Astuti, Lismining Pujiyani y Indriatmoko Indriatmoko. "Kemampuan Beberapa Tumbuhan Air dalam Menurunkan Pencemaran Bahan Organik dan Fosfat untuk Memperbaiki Kualitas Air". Jurnal Teknologi Lingkungan 19, n.º 2 (31 de julio de 2018): 183. http://dx.doi.org/10.29122/jtl.v19i2.2063.

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ABSTRACTAquatic plants are important part of aquatic ecosystem that can be used as an phytoremidiation agent, trapping organic matter in eutrophic waters as well as cleaning and controlling heavy metal pollution, pesticides and oil. The aim of research to assess the ability of some aquatic plants to organic matter and phosphate reduction for improve water quality. Research conducted at the Greenhouse of Institution Research for Fishes Resources Rehabilitation in May 2016. The study using factorial completely randomized and all treatment were conducted in triplicate. Aquatic plants are used Azolla sp., Spirodela sp., Duckweed (Lemna sp.), Salvinia sp., Water lettuce (Pistia sp), and water hyacinth (Eicchornia crassipes). Water media used are high stock solution of organic matter derived from fish farming waste water containing undigested, food, faeces and urine of fish. Water sampling was conducted on day 0 (T0), 2nd (T2), 5th (T5) and 9th (T9) after planting. The results showed that the total organic matter) and P-PO4 significantly different based on day of sampling, while the aquatic plant treatment significantly different at P-PO4 concentration, but not significantly different from the organic matter. However, based on the percentage change showed that the wood lettuce (Pistia sp) capable of lowering the BOT and P-PO4 as much as 55.52% and 60.62%, and the water hyacinth can lower both BOT and P-PO4 as much as 23.38 % and 92.68%. Relative growth rate (RGR) was higher in the aquatic plants that tend to be small as Spirodela sp, Lemna sp and with doubling time (DT) is relatively short. Water hyacinth plants tend to have a lower RGR values and DT are relatively long. The value of RGR and DT related to the availability of nutrients.Keywords: Aquatic Plants, Water Quality, Relative Growth Rate (RGR), Doubling Time (DT)ABSTRAKTumbuhan air merupakan bagian penting dari ekosistem perairan yang dimanfaatkan sebagai agen fitoremediasi, perangkap bahan organik di perairan eutrofik serta membersihkan dan mengontrol pencemaran logam berat, pestisida dan minyak. Tujuan penelitian untuk mengkaji kemampuan beberapa tumbuhan air dalam mengurangi pencemaran bahan organik dan fosfat dalam upaya memperbaiki kualitas perairan. Penelitian dilakukan di laboratorium rumah kaca Balai Riset Pemulihan Sumberdaya Ikan pada bulan Mei 2016. Penelitian menggunakan Rancangan Acak Lengkap Faktorial dengan tiga ulangan. Tumbuhan air yang digunakan Azolla sp., Spirodela sp., Mata lele (Lemna sp.), Kiambang (Salvinia sp.), Kayu apu (Pistia sp.), dan Eceng Gondok (Eicchornia crassipes). Media air yang digunakan adalah larutan stok tinggi bahan organik berasal dari air limbah budidaya ikan yang mengandung sisa pakan yang tidak tercerna, feses dan urin ikan. Pengambilan sampel air dilakukan pada 0 hari (T0), 2 hari (T2), 5 hari (T5) dan 9 hari (T9) setelah penanaman. Hasil penelitian menunjukkan bahwa bahan organik total (BOT) dan P-PO4 berbeda nyata pada perlakuan hari, sementara perlakuan jenis tumbuhan air berbeda nyata pada konsentrasi P-PO4 namun tidak berbeda nyata pada BOT. Persentase perubahan menunjukkan bahwa kayu apu mampu menurunkan BOT dan P-PO4 sebesar 55,52% dan 60,62% serta eceng gondok mampu menurunkan BOT dan P-PO4 sebesar 23,38% dan 92,68%. Nilai relative growth rate (RGR) lebih tinggi pada tanaman air yang cenderung kecil seperti Lemna sp dan Spirodela sp dengan doubling time (DT) yang relatif pendek. Tanaman eceng gondok cenderung mempunyai nilai RGR rendah dan DT yang relatif lama. Besarnya nilai RGR dan DT berkaitan dengan ketersediaan nutrisi.Kata kunci: Tumbuhan Air, Kualitas Air, Relative Growth Rate (RGR), Doubling Time (DT)

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Yu, Shengbao, Nan Chen, Lihui Gao, Haigen Zhou y Yong Huang. "Suppressing Conducted DM EMI in an Active Power Filter via Periodic Carrier Frequency Modulation". Energies 12, n.º 10 (18 de mayo de 2019): 1903. http://dx.doi.org/10.3390/en12101903.

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Active power filters (APF) aim at solving the harmonic problem originated by the nonlinear load in power systems. However, the high dv/dt and di/dt outputs from power electronic devices in a voltage source converter on APF introduced unwanted conducted electromagnetic interference (EMI) when compensating for the low-frequency harmonic components. Hence, this paper develops a spectrum analysis approach to investigate and quantify the source differential-mode (DM) voltage of a single-phase shunt APF to suppress the DM EMI via periodic carrier frequency modulation (PCFM). In this scheme, the analytical expressions of source DM voltage in the APF using the PCFM scheme are obtained with a double Fourier series. In addition, the influence of PCFM parameters on the source DM voltage spectrum is predicted based on the analytical expression. As a result, the PCFM parameters, which have the best suppression effect on the DM EMI are obtained. The experiment results proved the validity of the sawtooth PCFM APF with the maximum frequency deviation equal to 800 Hz in alleviating the APF DM EMI.

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45

Asllani, Besar, Pascal Bevilacqua, Hervé Morel, Dominique Planson, Luong Viet Phung, Beverley Choucoutou, Thomas Lagier y Michel Mermet-Guyennet. "Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons". Materials Science Forum 1004 (julio de 2020): 923–32. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.923.

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This paper reports the device design, fabrication and characterisation of 10 kV-class Bipolar Junction Transistor (BJT). Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington configurations. The static and switching characteristics of the resulting devices have been measured. The BJTs (2.4mm² active area) show a specific on-resistance as low as 198 mΩ·cm² at 100 A/cm² and room temperature for a βMax of 9.6, whereas the same active area Darlington beats the unipolar limit with a specific on-resistance of 102 mΩ·cm² at 200 A/cm² (β=11) for a βMax of 69. Double pulse tests reveal state of the art switching with very sharp dV/dt and di/dt. Turn-on is operated at less than 100 ns for an EON lower than 4mJ, whereas the turn-off takes longer times due to tail current resulting in EOFF of 17.2 mJ and 50 mJ for the single BJT and Darlington respectively when operated at high current density. Excellent parallelisation have been achieved.

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46

Moradpour, Milad, Paolo Pirino, Michele Losito, Wulf-Toke Franke, Amit Kumar y Gianluca Gatto. "Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles". Energies 13, n.º 14 (20 de julio de 2020): 3720. http://dx.doi.org/10.3390/en13143720.

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DC-DC converters are being used for power management and battery charging in electric vehicles (EVs). To further the role of EVs in the market, more efficient power electronic converters are needed. Wide band gap (WBG) devices such as silicon carbide (SiC) provide higher frequency and lower power loss, however, their high di/dt and dv/dt transients result in higher electromagnetic interference (EMI). On the other hand, some gate driver parameters such as gate resistor ( R G ) have a contradictory effect on efficiency ( η ) and EMI. The idea of this paper is to investigate the values of these parameters using a multi-objective optimization method to optimize η and EMI at the same time. To this aim, first, the effect of high and low side R G on η and EMI in the half-bridge configuration is studied. Then, the objective functions of the optimization problem are obtained using a numerical regression method on the basis of the experimental tests. Then, the values of the gate resistors are obtained by solving the multi-objective optimization problem. Finally, η and EMI of the converter in the optimum gate resistor design are compared to those in the conventional design to validate the effectiveness of the proposed design approach.

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47

Adikadarsih, Sri, Siska Permata, Taryono, Suyadi y Panjisakti Basunanda. "Hubungan Antara Hasil dan Komponen Hasil Wijen (Sesamum indicum L.) pada Generasi F1 dan F2 Persilangan Sbr2, Sbr3, dan Dt36". Buletin Tanaman Tembakau, Serat & Minyak Industri 7, n.º 1 (11 de octubre de 2016): 45. http://dx.doi.org/10.21082/bultas.v7n1.2015.45-51.

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Dalam program pemuliaan tanaman wijen, informasi keragaman genetik dan hubungan antarsifat sangat penting untuk menentukan keberhasilan seleksi. Penelitian yang bertujuan untuk mempelajari keragaman genetik dan hubungan antara komponen hasil dan hasil wijen pada generasi F1 dan F2 persilangan Sbr 2, Sbr 3, dan Dt 36 telah dilaksanakan dari bulan November 2012 sampai dengan Februari 2013 di Padangan, Sitimulyo, Piyungan, Bantul, Yogyakarta. Penelitian menggunakan rancangan acak lengkap (RAL) dengan tiga ulangan. Bahan tanam yang digunakan adalah benih tetua, F1, dan F2 hasil persilangan antara Sbr 3 x Sbr 2, Sbr 3 x Dt 36, Sbr 2 x Dt 36, dan resiproknya. Benih bulk hasil persilangan ditanam secara rapat dalam baris pada petak-petak yang berukuran 4 x 1 m. Pengamatan dilakukan pada parameter tinggi tanaman, jumlah cabang, jumlah polong, berat polong, berat biji, jumlah ruas, panjang ruas, umur berbunga, umur panen, dan berat 1.000 biji. Hasil penelitian menunjukkan bahwa komponen hasil yang memiliki keragaman genetik besar adalah berat biji per tanaman (68,437%), berat polong (40,532%), jumlah cabang (33,251%), jumlah polong (30,269%), dan tinggi tanaman (21,256%). Nilai heritabilitas yang tinggi terdapat pada tinggi tanaman (65,52%) dan umur panen (55%). Komponen hasil yang memiliki korelasi nyata terhadap hasil adalah jumlah cabang, jumlah polong, berat polong, dan umur berbunga, sedangkan yang berpengaruh langsung terhadap hasil wijen adalah jumlah cabang dan berat polong. In sesame breeding program, information about genetic variations and relationships ammongs characters is very important to determine the success of line selection. Studies about correlation between yield and yield components of F1 and F2 from crosses of Sbr 2, Sbr 3, and Dt 36 was conducted on November 2012 to February 2013 in Padangan, Sitimulyo, Piyungan, Bantul, Yogyakarta. The treatments were arranged in complete random design (CRD) with three replications. Planting materials used were the seed of parents, F1, and F2 from crossing between Sbr 3 x Sbr 2, Sbr 3 x Dt 36, Sbr 2 x Dt 36, and their reciprocals. Bulk breeding seeds planted in rows in high density to reach maximum populations as the genetic resource in the plots according to its genotypes. The observation was made on plant height, number of branches, number of pods, weight of pods, number of nodes, nodes length, day of flowering, plant maturing age, and 1,000 seed weight. The results showed that, components which showed high genetic variation were weight of seeds per plant (68.437%), weight of pods (40.532%), the number of branches (33.251%), number of pods (30.269%), and plant height (21.256%). High heritability values was shown in parameters of plant height (65.52%) and plant maturing age (55%). Yield components which have significant correlation with the yield were number of branches, number of pods, pod weight, and days to flowering, while those have a direct effect on the yield of sesame are the number of branches and pods weight.

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Masing, Musa. "Konseling Agama Pada Siswa Pecandu Narkoba". PEADA' : Jurnal Pendidikan Kristen 1, n.º 1 (26 de junio de 2020): 20–30. http://dx.doi.org/10.34307/peada.v1i1.9.

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The purpose of giving counseling for drug addicts students is to correct mistakes that are the new direction and purpose of life in God. Direction of life to God who will be equipped to a better future. In this study using qualitative research with case study techniques. The subjects in this study consisted of 2 students, junior high school students in Samarinda City who were addicted to drugs but were undergoing rehabilitation at the Tanah Merah Samarinda Rehabilitation Center and one person as a mental mentor of religion. This research focuses on Religious Counseling on addicted students. The purpose of this research is to find out the type of religious counseling used for drug addicts students who are undergoing rehabilitation at the BNN Tanah Merah Rehabilitation. The results showed that there were 6 Religious Counseling conducted at the Tanah Merah Samarinda Rehabilitation Center for DT and KS Clients, namely 6 Supportive-Counseling, Confrontational-Counseling, Educative-Counseling, Spiritual-Counseling, Group-Counseling, Preventive-Counseling. Tujuan pemberian konseling bagi siswa pecandu narkoba adalah memperbaiki kesalahan yang menjadi arah dan tujuan hidup baru di dalam Tuhan. Pengarahan hidup kepada Tuhan yang akan menjadi bekal menuju masa depan yang lebih baik. Dalam penelitian ini menggunakan penelitian Kualitatif dengan Teknik studi kasus. Subjek dalam penelitian ini terdiri dari 2 yaitu Siswa Sekolah Menengah Pertama (SMP) di Kota Samarinda yang menjadi Pecandu narkoba tetapi sedang menjalani rehabilitasi di Balai Rehabilitasi BNN Tanah Merah Samarinda dan satu orang sebagai Pembina mental Agama. Penelitian ini menfokuskan pada Konseling Agama pada siswa pecandu. Tujuan Penelitiannya adalah untuk mengetahui jenis konseling agama yang digunakan bagi siswa pecandu narkoba yang sedang menjalani rehabilitasi di Balai Rehabilitasi BNN Tanah Merah Samarinda. Hasil penelitian menunjukkan bahwa Konseling Agama yang dilakukan di Balai Rehabilitasi BNN Tanah Merah Samarinda kepada Klien DT dan KS ada 6 yaitu Supportive-Konseling, Confrontational-Konseling, Educative-Konseling, Spiritual-Konseling, Group-Konseling, Preventive-Konseling.

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Koehler, Andrew, Geoffrey Foster, Jacob Leach, Kevin Udwary, Heather Splawn, Karl D. Hobart y Travis J. Anderson. "(Invited) GaN Photoconductive Semiconductor Switches for Efficient High-Voltage Power Conversion Applications". ECS Meeting Abstracts MA2023-02, n.º 32 (22 de diciembre de 2023): 1577. http://dx.doi.org/10.1149/ma2023-02321577mtgabs.

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Gallium nitride (GaN) photoconductive switch (PCSS) technology can revolutionize high-voltage, efficient power-switching capabilities. PCSSs are optically driven, which advantageously isolates sensitive control circuitry from electromagnetic interference (EMI) resulting from rapidly switching high voltages and currents (high dI/dt or dV/dt). Fast switching times and extremely low on-resistances are achievable in PCSSs. The conductive channel region during on-state (under illumination) also serves as the voltage hold-off region in the off-state (dark) and does not require an additional drift layer that limits conventional unipolar device performance. In addition, the on-state resistivity can be further reduced by increasing the driving optical power density. Carbon-doped GaN (GaN:C) can result in extremely low dark currents, high blocking voltages, as well as support very low on-resistances. Lateral and vertical GaN PCSSs are fabricated. Lateral GaN:C PCSS structures consist of a 4 µm thick GaN:C layer grown by metal organic chemical vapor deposition (MOCVD) on a SiC substrate. Vertical GaN:C PCSS structures consist of a 100 µm thick GaN:C layer grown by hydrive vapor phase epitaxy (HVPE) on a native GaN substrate. Contacts were formed by evaporation of Ti/Au (25 nm /250 nm). The PCSS devices are driven with a 3 W commercial off-the-shelf (COTS) ultraviolet (UV) light emitting diode (LED) with peak output at 365 nm and a 10 nm full width half maximum. Vertical GaN PCSSs demonstrate exceptional on-state characteristics with an on-state current density of ~150A/cm2 , or an on-state resistivity of 66 mΩ-cm2. The off-state (dark) blocking capability exceeds 1 kV (maximum value tested). The transient switching characteristics of GaN:C PCSS will be characterized, and discussion will be provided relating to device design and optical driving conditions, including GaN:C carbon doping density, GaN:C layer thickness considerations, design for reduced contact resistance, illumination power density, and illumination wavelength.

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50

Purnama, Jajang Jaya, Hendri Mahmud Nawawi, Susy Rosyida, Ridwansyah Ridwansyah y Risnandar Risnandar. "Klasifikasi Mahasiswa HER Berbasis Algoritma SVM dan Decision Tree". Jurnal Teknologi Informasi dan Ilmu Komputer 7, n.º 6 (2 de diciembre de 2020): 1253. http://dx.doi.org/10.25126/jtiik.0813080.

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Mahasiswa di setiap perguruan tinggi dituntut untuk memperoleh pengetahuan dan keterampilan yang memenuhi syarat dengan prestasi akademik. Hasil dari pembelajaran mahasiswa didapat dari ujian teori dan praktek, setiap mahasiswa wajib menuntaskan nilai sesuai kriteria kelulusan minimum dari masing-masing dosen pengajar, jika dibawah batas minimum maka mahasiswa mengikuti her. Her adalah salah satu cara untuk menuntaskan kriteria kelulusan minimum. Mahasiswa yang mengikuti her setiap semesternya hampir mencapai angka yang relatif tinggi dari jumlah seluruh mahasiswa. Untuk mengurangi jumlah mahasiswa yang mengikuti her maka dibutuhkan sebuah metode yang dapat mengurangi hal tersebut, dengan metode Support Vector Machine (SVM) dan Decision Tree (DT). SVM dan DT adalah salah satu metode klasifikasi supervised learning. Oleh karena itu, dalam penelitian ini menggunakan SVM dan DT. SVM dapat menghilangkan hambatan pada data, memprediksi, mengklasifikasikan dengan sampling kecil dan dapat meningkatkan akurasi dan mengurangi kesalahan. Klasifikasi data siswa yang melakukan her/peningkatan dengan mengimprovisasi model kernel untuk visualisasi termasuk bar, histogram, dan sebaran begitu juga Decision Tree mempunyai kelebihan tersendiri. Dari hasil penelitian ini telah didapatkan akruasi dan presisi model DT lebih besar dibandingkan dengan SVM, akan tetapi untuk recall DT lebih kecil dibandingkan SVM. Abstract Students in each tertiary institution are required to obtain knowledge and skills that meet the requirements with academic achievement. The results of student learning are obtained from the theory and practice exams, each student is required to complete grades according to the minimum graduation criteria of each teaching lecturer, if below the minimum limit then students take remedial. Remedial is one way to complete the minimum passing criteria. Students who take remedial every semester almost reach a relatively high number of the total number of students. To reduce the number of students who take remedial, a method that can reduce this is needed, with the Support Vector Machine (SVM) and Decision Tree (DT) methods. SVM and DT are one of the supervised learning classification methods. Therefore, in this study using SVM and DT. SVM can eliminate barriers to data, predict, classify with small sampling and can improve accuracy and reduce errors. Data classification of students who do remedial/improvements by improving the kernel model for visualization including bars, histograms, and distributions as well as the Decision Tree has its own advantages. From the results of this study it has been obtained that the accuracy and precision of DT models is greater than that of SVM, but for recall DT is smaller than SVM.

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