Artículos de revistas sobre el tema "Graphene Schottky Diode"
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Rahmani, Meisam, Razali Ismail, Mohammad Taghi Ahmadi, Mohammad Javad Kiani, Mehdi Saeidmanesh, F. A. Hediyeh Karimi, Elnaz Akbari y Komeil Rahmani. "The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance". Journal of Nanomaterials 2013 (2013): 1–8. http://dx.doi.org/10.1155/2013/636239.
Texto completoAshour, A., M. Saqr, M. AbdelKarim, A. Gamal, A. Sharaf y M. Serry. "Schottky Diode Graphene Based Sensors". International Journal on Smart Sensing and Intelligent Systems 7, n.º 5 (2020): 1–4. http://dx.doi.org/10.21307/ijssis-2019-097.
Texto completoMohd Saman, Rahimah, Sharaifah Kamariah Wan Sabli, Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Haniff y Mohd Ismahadi Syono. "High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications". Applied Sciences 9, n.º 8 (17 de abril de 2019): 1587. http://dx.doi.org/10.3390/app9081587.
Texto completoLabed, Madani, Nouredine Sengouga y You Seung Rim. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer". Nanomaterials 12, n.º 5 (1 de marzo de 2022): 827. http://dx.doi.org/10.3390/nano12050827.
Texto completoShtepliuk, Ivan, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz y Rositsa Yakimova. "Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals". Beilstein Journal of Nanotechnology 7 (22 de noviembre de 2016): 1800–1814. http://dx.doi.org/10.3762/bjnano.7.173.
Texto completoDub, Maksym, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Maciej Sakowicz, Paweł Prystawko, Jacek Kacperski et al. "Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures". Materials 13, n.º 18 (17 de septiembre de 2020): 4140. http://dx.doi.org/10.3390/ma13184140.
Texto completoSeven, Elanur, Elif Öz Orhan y Sema Bilge Ocak. "Changes in frequency-dependent dielectric features of monolayer graphene/silicon structure due to gamma irradiation". Physica Scripta 96, n.º 12 (15 de noviembre de 2021): 125852. http://dx.doi.org/10.1088/1402-4896/ac369f.
Texto completoSelvi, Hakan, Nawapong Unsuree, Eric Whittaker, Matthew P. Halsall, Ernie W. Hill, Andrew Thomas, Patrick Parkinson y Tim J. Echtermeyer. "Towards substrate engineering of graphene–silicon Schottky diode photodetectors". Nanoscale 10, n.º 7 (2018): 3399–409. http://dx.doi.org/10.1039/c7nr09591k.
Texto completoSelvi, Hakan, Ernie W. Hill, Patrick Parkinson y Tim J. Echtermeyer. "Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors". Nanoscale 10, n.º 40 (2018): 18926–35. http://dx.doi.org/10.1039/c8nr05285a.
Texto completoLuo, Lin-Bao, Shun-Hang Zhang, Rui Lu, Wei Sun, Qun-Ling Fang, Chun-Yan Wu, Ji-Gang Hu y Li Wang. "p-type ZnTe:Ga nanowires: controlled doping and optoelectronic device application". RSC Advances 5, n.º 18 (2015): 13324–30. http://dx.doi.org/10.1039/c4ra14096f.
Texto completoShen, Lingyan, Xinhong Cheng, Zhongjian Wang, Chao Xia, Duo Cao, Li Zheng, Qian Wang y Yuehui Yu. "Passivation effect of graphene on AlGaN/GaN Schottky diode". RSC Advances 5, n.º 105 (2015): 86593–97. http://dx.doi.org/10.1039/c5ra12550b.
Texto completoApicella, Valerio, Teslim Ayinde Fasasi, Shu Wang, Sipeng Lei y Antonio Ruotolo. "A Multilayer‐Graphene/Silicon Infrared Schottky Photo‐Diode". Advanced Electronic Materials 5, n.º 12 (6 de agosto de 2019): 1900594. http://dx.doi.org/10.1002/aelm.201900594.
Texto completoKumar, Ashish, Arathy Varghese, Shriniwas Yadav, Mahanth Prasad, Vijay Janyani y R. P. Yadav. "Influence of Temperature on Graphene/ZnO Heterojunction Schottky Diode Characteristics". Journal of Nanoscience and Nanotechnology 21, n.º 5 (1 de mayo de 2021): 3165–70. http://dx.doi.org/10.1166/jnn.2021.19084.
Texto completoZhu, Miao, Li Zhang, Xinming Li, Yijia He, Xiao Li, Fengmei Guo, Xiaobei Zang et al. "TiO2 enhanced ultraviolet detection based on a graphene/Si Schottky diode". Journal of Materials Chemistry A 3, n.º 15 (2015): 8133–38. http://dx.doi.org/10.1039/c5ta00702j.
Texto completoLee, Youngmin, Deuk Young Kim y Sejoon Lee. "Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity". Nanomaterials 9, n.º 5 (24 de mayo de 2019): 799. http://dx.doi.org/10.3390/nano9050799.
Texto completoRahmani, Meisam, M. T. Ahmadi, Razali Ismail y M. H. Ghadiry. "Performance of Bilayer Graphene Nanoribbon Schottky Diode in Comparison with Conventional Diodes". Journal of Computational and Theoretical Nanoscience 10, n.º 2 (1 de febrero de 2013): 323–27. http://dx.doi.org/10.1166/jctn.2013.2699.
Texto completoPeriyanagounder, Dharmaraj, Paulraj Gnanasekar, Purushothaman Varadhan, Jr-Hau He y Jeganathan Kulandaivel. "High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode". Journal of Materials Chemistry C 6, n.º 35 (2018): 9545–51. http://dx.doi.org/10.1039/c8tc02786b.
Texto completoKiat, Wong King, Razali Ismail y M. Taghi Ahmadi. "The Potential Barrier of Graphene Nanoribbon Based Schottky Diode". Journal of Nanoelectronics and Optoelectronics 8, n.º 3 (1 de marzo de 2013): 281–84. http://dx.doi.org/10.1166/jno.2013.1467.
Texto completoKhairir, Nur Samihah, Mohd Rofei Mat Hussin, Iskhandar Md Nasir, A. S. M. Mukhter Uz-Zaman, Wan Fazlida Hanim Abdullah y Ahmad Sabirin Zoolfakar. "Study of Reduced Graphene Oxide for Trench Schottky Diode". IOP Conference Series: Materials Science and Engineering 99 (19 de noviembre de 2015): 012031. http://dx.doi.org/10.1088/1757-899x/99/1/012031.
Texto completoPandey, Rajiv K., Arun Kumar Singh y Rajiv Prakash. "Enhancement in performance of polycarbazole-graphene nanocomposite Schottky diode". AIP Advances 3, n.º 12 (diciembre de 2013): 122120. http://dx.doi.org/10.1063/1.4860952.
Texto completoOrhan, Elif Oz, Esra Efil, Ozkan Bayram, Nuriye Kaymak, Halil Berberoğlu, Ozun Candemir, Ihor Pavlov y Sema Bilge Ocak. "3D-graphene-laser patterned p-type silicon Schottky diode". Materials Science in Semiconductor Processing 121 (enero de 2021): 105454. http://dx.doi.org/10.1016/j.mssp.2020.105454.
Texto completoSingh, Amol, Md Ahsan Uddin, Tangali Sudarshan y Goutam Koley. "Tunable Reverse-Biased Graphene/Silicon Heterojunction Schottky Diode Sensor". Small 10, n.º 8 (23 de diciembre de 2013): 1555–65. http://dx.doi.org/10.1002/smll.201302818.
Texto completoKhurelbaatar, Zagarzusem, Yeon-Ho Kil, Kyu-Hwan Shim, Hyunjin Cho, Myung-Jong Kim, Sung-Nam Lee, Jae-chan Jeong, Hyobong Hong y Chel-Jong Choi. "Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode". Superlattices and Microstructures 91 (marzo de 2016): 306–12. http://dx.doi.org/10.1016/j.spmi.2016.01.029.
Texto completoHeo, J., H. J. Song, K. E. Byun, D. S. Seo y S. Park. "(Invited) Graphene Based Tunable Schottky Diode for High Performance Devices". ECS Transactions 53, n.º 1 (2 de mayo de 2013): 101–6. http://dx.doi.org/10.1149/05301.0101ecst.
Texto completoHalder, Soumi, Baishakhi Pal, Arka Dey, Sayantan Sil, Pubali Das, Animesh Biswas y Partha Pratim Ray. "Effect of graphene on improved photosensitivity of MoS2-graphene composite based Schottky diode". Materials Research Bulletin 118 (octubre de 2019): 110507. http://dx.doi.org/10.1016/j.materresbull.2019.110507.
Texto completoNoroozi, Ali Akbar y Yaser Abdi. "A graphene/Si Schottky diode for the highly sensitive detection of protein". RSC Advances 9, n.º 34 (2019): 19613–19. http://dx.doi.org/10.1039/c9ra03765a.
Texto completoChe Azmi, Siti Nadiah, Shaharin Fadzli Abd Rahman y Abdul Manaf Hashim. "Back-to-Back Schottky Diode from Vacuum Filtered and Chemically Reduced Graphene Oxide". Indonesian Journal of Electrical Engineering and Computer Science 10, n.º 3 (1 de junio de 2018): 897. http://dx.doi.org/10.11591/ijeecs.v10.i3.pp897-904.
Texto completoKhurelbaatar, Zagarzusem, Yeon-Ho Kil, Kyu-Hwan Shim, Hyunjin Cho, Myung-Jong Kim, Yong-Tae Kim y Chel-Jong Choi. "Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode". JSTS:Journal of Semiconductor Technology and Science 15, n.º 1 (28 de febrero de 2015): 7–15. http://dx.doi.org/10.5573/jsts.2015.15.1.007.
Texto completoBerktaş, Zeynep, Mustafa Yıldız, Elanur Seven, Elif Oz Orhan y Şemsettin Altındal. "PEI N-doped graphene quantum dots/p-type silicon Schottky diode". FlatChem 36 (noviembre de 2022): 100436. http://dx.doi.org/10.1016/j.flatc.2022.100436.
Texto completoYagmurcukardes, N., H. Aydın, M. Can, A. Yanılmaz, Ö. Mermer, S. Okur y Y. Selamet. "Effect of Aromatic SAMs Molecules on Graphene/Silicon Schottky Diode Performance". ECS Journal of Solid State Science and Technology 5, n.º 7 (2016): M69—M73. http://dx.doi.org/10.1149/2.0141607jss.
Texto completoFattah, Ali y Saeid Khatami. "Selective H2S Gas Sensing With a Graphene/n-Si Schottky Diode". IEEE Sensors Journal 14, n.º 11 (noviembre de 2014): 4104–8. http://dx.doi.org/10.1109/jsen.2014.2334064.
Texto completoAzmi, Siti Nadiah Che, Shaharin Fadzli Abd Rahman, Amirjan Nawabjan y Abdul Manaf Hashim. "Junction properties analysis of silicon back-to-back Schottky diode with reduced graphene oxide Schottky electrodes". Microelectronic Engineering 196 (septiembre de 2018): 32–37. http://dx.doi.org/10.1016/j.mee.2018.04.020.
Texto completoUddin, Md Ahsan, Amol Singh, Kevin Daniels, Thomas Vogt, M. V. S. Chandrashekhar y Goutam Koley. "Impedance spectroscopic analysis of nanoparticle functionalized graphene/p-Si Schottky diode sensors". Japanese Journal of Applied Physics 55, n.º 11 (21 de octubre de 2016): 110312. http://dx.doi.org/10.7567/jjap.55.110312.
Texto completoKırsoy, A., M. Ahmetoglu, M. Okutan y F. Yakuphanoglu. "Electrical Properties Inorganic-on-Organic Hybrid GaAs/Graphene Oxide Schottky Barrier Diode". Journal of Nanoelectronics and Optoelectronics 11, n.º 1 (1 de febrero de 2016): 108–14. http://dx.doi.org/10.1166/jno.2016.1884.
Texto completoSeol, Jeong-Hoon, Sang-Bum Kang, Chang-Ju Lee, Chul-Ho Won, Hongsik Park, Jung-Hee Lee y Sung-Ho Hahm. "Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands". IEEE Sensors Journal 16, n.º 18 (septiembre de 2016): 6903–7. http://dx.doi.org/10.1109/jsen.2016.2594185.
Texto completoKhurelbaatar, Zagarzusem, Yeon-Ho Kil, Hyung-Joong Yun, Kyu-Hwan Shim, Jung Tae Nam, Keun-Soo Kim, Sang-Kwon Lee y Chel-Jong Choi. "Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer". Journal of Alloys and Compounds 614 (noviembre de 2014): 323–29. http://dx.doi.org/10.1016/j.jallcom.2014.06.132.
Texto completoEfil Kutluoğlu, Esra, Elif Öz Orhan, Özkan Bayram y Sema Bilge Ocak. "Gamma-ray irradiation effects on capacitance and conductance of graphene-based Schottky diode". Physica B: Condensed Matter 621 (noviembre de 2021): 413306. http://dx.doi.org/10.1016/j.physb.2021.413306.
Texto completoKutluoğlu, Esra Efil, Elif Öz Orhan, Adem Tataroğlu y Özkan Bayram. "Double-exponential current-voltage (I-V) behavior of bilayer graphene-based Schottky diode". Physica Scripta 96, n.º 12 (14 de octubre de 2021): 125836. http://dx.doi.org/10.1088/1402-4896/ac2af5.
Texto completoKiat, Wong King, Razali Ismail y M. Taghi Ahmadi. "Contact Effect on the Current–Voltage Characteristic of Graphene Nanoribbon Based Schottky Diode". Journal of Computational and Theoretical Nanoscience 12, n.º 3 (1 de marzo de 2015): 478–83. http://dx.doi.org/10.1166/jctn.2015.3756.
Texto completoNourbakhsh, Amirhasan, Mirco Cantoro, Afshin Hadipour, Tom Vosch, Marleen H. van der Veen, Marc M. Heyns, Bert F. Sels y Stefan De Gendt. "Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode". Applied Physics Letters 97, n.º 16 (18 de octubre de 2010): 163101. http://dx.doi.org/10.1063/1.3495777.
Texto completoAbd Rahman, Shaharin Fadzli, Nurul Anati Salleh, Mastura Shafinaz Zainal Abidin y Amirjan Nawabjan. "Humidity effect on electrical properties of graphene oxide back-to-back Schottky diode". TELKOMNIKA (Telecommunication Computing Electronics and Control) 17, n.º 5 (1 de octubre de 2019): 2427. http://dx.doi.org/10.12928/telkomnika.v17i5.12800.
Texto completoLee, Hwauk, Namhyun An, Seockjin Jeong, Soonhong Kang, Soonki Kwon, Jisu Lee, Youngmin Lee, Deuk Young Kim y Sejoon Lee. "Strong dependence of photocurrent on illumination-light colors for ZnO/graphene Schottky diode". Current Applied Physics 17, n.º 4 (abril de 2017): 552–56. http://dx.doi.org/10.1016/j.cap.2017.02.001.
Texto completoZhu, Miao, Xinming Li, Sunki Chung, Liyun Zhao, Xiao Li, Xiaobei Zang, Kunlin Wang et al. "Photo-induced selective gas detection based on reduced graphene oxide/Si Schottky diode". Carbon 84 (abril de 2015): 138–45. http://dx.doi.org/10.1016/j.carbon.2014.12.008.
Texto completoHong, Sang-Hyun y Jang-Won Kang. "Plasmonic Enhancement of UV Photoresponse in Graphene/ZnO Schottky Diode with Pt Nanoparticles". Applied Science and Convergence Technology 31, n.º 6 (4 de octubre de 2022): 133–36. http://dx.doi.org/10.5757/asct.2022.31.6.133.
Texto completoBiswas, Md Rokon Ud Dowla y Won-Chun Oh. "Comparative study on gas sensing by a Schottky diode electrode prepared with graphene–semiconductor–polymer nanocomposites". RSC Advances 9, n.º 20 (2019): 11484–92. http://dx.doi.org/10.1039/c9ra00007k.
Texto completoChaliyawala, Harsh A., Suresh Vemuri, Kashinath Lellala y Indrajit Mukhopadhyay. "Role of surface passivation on the development of camphor based Graphene/SiNWAs schottky diode". Materials Today: Proceedings 45 (2021): 3789–94. http://dx.doi.org/10.1016/j.matpr.2021.01.283.
Texto completoMat Hussin, Mohd Rofei, Muhammad Mahyiddin Ramli, Sharaifah Kamariah Wan Sabli, Iskhandar Md Nasir, Mohd Ismahadi Syono, H. Y. Wong y Mukter Zaman. "Fabrication and Characterization of Graphene-on-Silicon Schottky Diode for Advanced Power Electronic Design". Sains Malaysiana 46, n.º 7 (31 de julio de 2017): 1147–54. http://dx.doi.org/10.17576/jsm-2017-4607-18.
Texto completoIslam, Muhammad R., Daeha Joung y Saiful I. Khondaker. "Schottky diode via dielectrophoretic assembly of reduced graphene oxide sheets between dissimilar metal contacts". New Journal of Physics 13, n.º 3 (23 de marzo de 2011): 035021. http://dx.doi.org/10.1088/1367-2630/13/3/035021.
Texto completoAdhikari, Subash, Chandan Biswas, Manh-Ha Doan, Sung-Tae Kim, Chandramouli Kulshreshtha y Young Hee Lee. "Minimizing Trap Charge Density towards an Ideal Diode in Graphene–Silicon Schottky Solar Cell". ACS Applied Materials & Interfaces 11, n.º 1 (18 de diciembre de 2018): 880–88. http://dx.doi.org/10.1021/acsami.8b18140.
Texto completoDas, Mrinmay, Joydeep Datta, Animesh Biswas, Soumi Halder y Partha Pratim Ray. "Enhanced charge transport properties of rGO-TiO2 based Schottky diode by tuning graphene content". Materials Today: Proceedings 11 (2019): 776–81. http://dx.doi.org/10.1016/j.matpr.2019.03.042.
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