Artículos de revistas sobre el tema "Graphene p-n junction"
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Fan, Yan, Tao Wang, Yinwei Qiu, Yinli Yang, Qiubo Pan, Jun Zheng, Songwei Zeng, Wei Liu, Gang Lou y Liang Chen. "Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect". Molecules 26, n.º 22 (13 de noviembre de 2021): 6849. http://dx.doi.org/10.3390/molecules26226849.
Texto completoIndykiewicz, K., C. Bray, C. Consejo, F. Teppe, S. Danilov, S. D. Ganichev y A. Yurgens. "Current-induced enhancement of photo-response in graphene THz radiation detectors". AIP Advances 12, n.º 11 (1 de noviembre de 2022): 115009. http://dx.doi.org/10.1063/5.0117818.
Texto completoLow, Tony, Seokmin Hong, Joerg Appenzeller, Supriyo Datta y Mark S. Lundstrom. "Conductance Asymmetry of Graphene p-n Junction". IEEE Transactions on Electron Devices 56, n.º 6 (junio de 2009): 1292–99. http://dx.doi.org/10.1109/ted.2009.2017646.
Texto completoLiang, Jierui, Ke Xu, Swati Arora, Jennifer E. Laaser y Susan K. Fullerton-Shirey. "Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions". Materials 13, n.º 5 (1 de marzo de 2020): 1089. http://dx.doi.org/10.3390/ma13051089.
Texto completoJung, Min Wook, Woo Seok Song, Sung Myung, Jong Sun Lim, Sun Sook Lee y Ki Seok An. "Formation of Graphene P-N Junction Arrays Using Soft-Lithographic Patterning and Cross-Stacking". Advanced Materials Research 1098 (abril de 2015): 63–68. http://dx.doi.org/10.4028/www.scientific.net/amr.1098.63.
Texto completoZhang, Shu-Hui, Jia-Ji Zhu, Wen Yang y Kai Chang. "Focusing RKKY interaction by graphene P–N junction". 2D Materials 4, n.º 3 (27 de junio de 2017): 035005. http://dx.doi.org/10.1088/2053-1583/aa76d2.
Texto completoLv, Shu-Hui, Shu-Bo Feng y Yu-Xian Li. "Thermopower and conductance for a graphene p–n junction". Journal of Physics: Condensed Matter 24, n.º 14 (13 de marzo de 2012): 145801. http://dx.doi.org/10.1088/0953-8984/24/14/145801.
Texto completoYu, Tianhua, Changdong Kim, Chen-Wei Liang y Bin Yu. "Formation of Graphene p-n Junction via Complementary Doping". IEEE Electron Device Letters 32, n.º 8 (agosto de 2011): 1050–52. http://dx.doi.org/10.1109/led.2011.2158382.
Texto completoPeters, Eva C., Eduardo J. H. Lee, Marko Burghard y Klaus Kern. "Gate dependent photocurrents at a graphene p-n junction". Applied Physics Letters 97, n.º 19 (8 de noviembre de 2010): 193102. http://dx.doi.org/10.1063/1.3505926.
Texto completoLi, Hao, Shubin Su, Chenhui Liang, Ting Zhang, Xuhong An, Meizhen Huang, Haihua Tao et al. "UV Rewritable Hybrid Graphene/Phosphor p–n Junction Photodiode". ACS Applied Materials & Interfaces 11, n.º 46 (28 de octubre de 2019): 43351–58. http://dx.doi.org/10.1021/acsami.9b14461.
Texto completoKim, Jun Beom, Jinshu Li, Yongsuk Choi, Dongmok Whang, Euyheon Hwang y Jeong Ho Cho. "Photosensitive Graphene P–N Junction Transistors and Ternary Inverters". ACS Applied Materials & Interfaces 10, n.º 15 (19 de marzo de 2018): 12897–903. http://dx.doi.org/10.1021/acsami.8b00483.
Texto completoLemme, Max C., Frank H. L. Koppens, Abram L. Falk, Mark S. Rudner, Hongkun Park, Leonid S. Levitov y Charles M. Marcus. "Gate-Activated Photoresponse in a Graphene p–n Junction". Nano Letters 11, n.º 10 (12 de octubre de 2011): 4134–37. http://dx.doi.org/10.1021/nl2019068.
Texto completoHammam, Ahmed M. M., Marek E. Schmidt, Manoharan Muruganathan y Hiroshi Mizuta. "Sharp switching behaviour in graphene nanoribbon p-n junction". Carbon 121 (septiembre de 2017): 399–407. http://dx.doi.org/10.1016/j.carbon.2017.05.097.
Texto completoLi, Xiao, Lili Fan, Zhen Li, Kunlin Wang, Minlin Zhong, Jinquan Wei, Dehai Wu y Hongwei Zhu. "Boron Doping of Graphene for Graphene-Silicon p-n Junction Solar Cells". Advanced Energy Materials 2, n.º 4 (17 de febrero de 2012): 425–29. http://dx.doi.org/10.1002/aenm.201100671.
Texto completoZhou, Xingfei, Ziying Wu, Yuchen Bai, Qicheng Wang, Zhentao Zhu, Wei Yan y Yafang Xu. "Light-modulated electron retroreflection and Klein tunneling in a graphene-based n–p–n junction". Chinese Physics B 31, n.º 4 (1 de marzo de 2022): 047301. http://dx.doi.org/10.1088/1674-1056/ac2b94.
Texto completoWang, J. X., Q. Q. Huang, C. L. Wu, Z. J. Wei, N. N. Xuan, Z. Z. Sun, Y. Y. Fu y R. Huang. "Realization of controllable graphene p–n junctions through gate dielectric engineering". RSC Advances 5, n.º 98 (2015): 80496–500. http://dx.doi.org/10.1039/c5ra10921c.
Texto completoKhurelbaatar, Zagarzusem y Chel Jong Choi. "Graphene/Ge Schottky Junction Based IR Photodetectors". Solid State Phenomena 271 (enero de 2018): 133–37. http://dx.doi.org/10.4028/www.scientific.net/ssp.271.133.
Texto completoHo, Po-Hsun, Wei-Chen Lee, Yi-Ting Liou, Ya-Ping Chiu, Yi-Siang Shih, Chun-Chi Chen, Pao-Yun Su et al. "Sunlight-activated graphene-heterostructure transparent cathodes: enabling high-performance n-graphene/p-Si Schottky junction photovoltaics". Energy & Environmental Science 8, n.º 7 (2015): 2085–92. http://dx.doi.org/10.1039/c5ee00548e.
Texto completoJung, Minkyung, Peter Rickhaus, Simon Zihlmann, Alexander Eichler, Peter Makk y Christian Schönenberger. "GHz nanomechanical resonator in an ultraclean suspended graphene p–n junction". Nanoscale 11, n.º 10 (2019): 4355–61. http://dx.doi.org/10.1039/c8nr09963d.
Texto completoSyariati, Rifky, Endi Suhendi, Fatimah A. Noor, Mikrajuddin Abdullah y Khairurrijal. "Modeling of Electron Tunneling Current in a p-n Junction Based on Strained Armchair Graphene Nanoribbon". International Journal of Applied Physics and Mathematics 4, n.º 4 (2014): 259–62. http://dx.doi.org/10.7763/ijapm.2014.v4.295.
Texto completoPark, Chang-Soo. "Band-Gap tuned oscillatory conductance in bilayer graphene n-p-n junction". Journal of Applied Physics 116, n.º 3 (21 de julio de 2014): 033702. http://dx.doi.org/10.1063/1.4890224.
Texto completoHe, Xin, Ning Tang, Li Gao, Junxi Duan, Yuewei Zhang, Fangchao Lu, Fujun Xu et al. "Formation of p-n-p junction with ionic liquid gate in graphene". Applied Physics Letters 104, n.º 14 (7 de abril de 2014): 143102. http://dx.doi.org/10.1063/1.4870656.
Texto completoWoszczyna, M., M. Friedemann, T. Dziomba, Th Weimann y F. J. Ahlers. "Graphene p-n junction arrays as quantum-Hall resistance standards". Applied Physics Letters 99, n.º 2 (11 de julio de 2011): 022112. http://dx.doi.org/10.1063/1.3608157.
Texto completoYang, Mou, Xian-Jin Ran, Yan Cui y Rui-Qiang Wang. "Conductance oscillation of graphene nanoribbon with tilted p-n junction". Journal of Applied Physics 111, n.º 8 (15 de abril de 2012): 083708. http://dx.doi.org/10.1063/1.4704388.
Texto completoRahmani, Meisam, M. T. Ahmadi, Mohammad Javad Kiani y Razali Ismail. "Monolayer Graphene Nanoribbon p–n Junction". Journal of Nanoengineering and Nanomanufacturing 2, n.º 4 (1 de diciembre de 2012): 375–78. http://dx.doi.org/10.1166/jnan.2012.1097.
Texto completoMulyana, Yana, Mutsunori Uenuma, Naofumi Okamoto, Yasuaki Ishikawa, Ichiro Yamashita y Yukiharu Uraoka. "Creating Reversible p–n Junction on Graphene through Ferritin Adsorption". ACS Applied Materials & Interfaces 8, n.º 12 (17 de marzo de 2016): 8192–200. http://dx.doi.org/10.1021/acsami.5b12226.
Texto completoTian, Pin, Libin Tang, Kar Seng Teng, Jinzhong Xiang y Shu Ping Lau. "Recent Advances in Graphene Homogeneous p–n Junction for Optoelectronics". Advanced Materials Technologies 4, n.º 7 (12 de abril de 2019): 1900007. http://dx.doi.org/10.1002/admt.201900007.
Texto completoXu, Xiaodan, Cong Wang, Yang Liu, Xiaofeng Wang, Nan Gong, Zhimao Zhu, Bin Shi et al. "A graphene P–N junction induced by single-gate control of dielectric structures". Journal of Materials Chemistry C 7, n.º 29 (2019): 8796–802. http://dx.doi.org/10.1039/c9tc02474c.
Texto completoPhan, Duy-Thach y Gwiy-Sang Chung. "P–n junction characteristics of graphene oxide and reduced graphene oxide on n-type Si(111)". Journal of Physics and Chemistry of Solids 74, n.º 11 (noviembre de 2013): 1509–14. http://dx.doi.org/10.1016/j.jpcs.2013.02.007.
Texto completoSaisa-ard, Chaipattana, I. Ming Tang y Rassmidara Hoonsawat. "Effects of band gap opening on an n–p–n bilayer graphene junction". Physica E: Low-dimensional Systems and Nanostructures 43, n.º 5 (marzo de 2011): 1061–64. http://dx.doi.org/10.1016/j.physe.2010.12.015.
Texto completoRajabi, Mehran, Mina Amirmazlaghani y Farshid Raissi. "Graphene-Based Bipolar Junction Transistor". ECS Journal of Solid State Science and Technology 10, n.º 11 (1 de noviembre de 2021): 111004. http://dx.doi.org/10.1149/2162-8777/ac3551.
Texto completoMurakami, N., Y. Sugiyama, Y. Ohno y M. Nagase. "Blackbody-like infrared radiation in stacked graphene P–N junction diode". Japanese Journal of Applied Physics 60, SC (22 de febrero de 2021): SCCD01. http://dx.doi.org/10.35848/1347-4065/abe208.
Texto completoSohn, Yeongsup, Woo Jong Shin, Sae Hee Ryu, Minjae Huh, Seyeong Cha y Keun Su Kim. "Graphene p-n junction formed on SiC(0001) by Au intercalation". Journal of the Korean Physical Society 78, n.º 1 (15 de diciembre de 2020): 40–44. http://dx.doi.org/10.1007/s40042-020-00010-0.
Texto completoLi, Yuan, Mansoor B. A. Jalil y Guanghui Zhou. "Giant magnetoresistance modulated by magnetic field in graphene p-n junction". Applied Physics Letters 105, n.º 19 (10 de noviembre de 2014): 193108. http://dx.doi.org/10.1063/1.4901743.
Texto completoNakaharai, Shu, Tomohiko Iijima, Shinichi Ogawa, Hisao Miyazaki, Songlin Li, Kazuhito Tsukagoshi, Shintaro Sato y Naoki Yokoyama. "Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon". Applied Physics Express 5, n.º 1 (12 de diciembre de 2011): 015101. http://dx.doi.org/10.1143/apex.5.015101.
Texto completoJung, Minkyung, Peter Rickhaus, Simon Zihlmann, Peter Makk y Christian Schönenberger. "Microwave Photodetection in an Ultraclean Suspended Bilayer Graphene p–n Junction". Nano Letters 16, n.º 11 (11 de octubre de 2016): 6988–93. http://dx.doi.org/10.1021/acs.nanolett.6b03078.
Texto completoXu, Lei, Jin An y Chang-De Gong. "Quantized four-terminal resistances in a ferromagnetic graphene p–n junction". Journal of Physics: Condensed Matter 24, n.º 22 (2 de mayo de 2012): 225301. http://dx.doi.org/10.1088/0953-8984/24/22/225301.
Texto completoLiu, Chieh-I., Dominick S. Scaletta, Dinesh K. Patel, Mattias Kruskopf, Antonio Levy, Heather M. Hill y Albert F. Rigosi. "Analysing quantized resistance behaviour in graphene Corbino p-n junction devices". Journal of Physics D: Applied Physics 53, n.º 27 (5 de mayo de 2020): 275301. http://dx.doi.org/10.1088/1361-6463/ab83bb.
Texto completoZhu, Minmin, Jing Wu, Zehui Du, Siuhon Tsang y Edwin Hang Tong Teo. "Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation". Journal of Applied Physics 124, n.º 21 (7 de diciembre de 2018): 215302. http://dx.doi.org/10.1063/1.5052589.
Texto completoAli, Asif, So-Young Kim, Muhammad Hussain, Syed Hassan Abbas Jaffery, Ghulam Dastgeer, Sajjad Hussain, Bach Thi Phuong Anh, Jonghwa Eom, Byoung Hun Lee y Jongwan Jung. "Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction". Nanomaterials 11, n.º 11 (9 de noviembre de 2021): 3003. http://dx.doi.org/10.3390/nano11113003.
Texto completoLü, Xiao-Long y Hang Xie. "Bipolar and unipolar valley filter effects in graphene-based P/N junction". New Journal of Physics 22, n.º 7 (14 de julio de 2020): 073003. http://dx.doi.org/10.1088/1367-2630/ab950d.
Texto completoLiu, Jingping, Safieddin Safavi‐Naeini y Dayan Ban. "Fabrication and measurement of graphene p–n junction with two top gates". Electronics Letters 50, n.º 23 (noviembre de 2014): 1724–26. http://dx.doi.org/10.1049/el.2014.3061.
Texto completoSuszalski, Dominik, Grzegorz Rut y Adam Rycerz. "Mesoscopic valley filter in graphene Corbino disk containing a p–n junction". Journal of Physics: Materials 3, n.º 1 (21 de noviembre de 2019): 015006. http://dx.doi.org/10.1088/2515-7639/ab5082.
Texto completoWilliams, J. R., L. DiCarlo y C. M. Marcus. "Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene". Science 317, n.º 5838 (3 de agosto de 2007): 638–41. http://dx.doi.org/10.1126/science.1144657.
Texto completoChiu, Hsin-Ying, Vasili Perebeinos, Yu-Ming Lin y Phaedon Avouris. "Controllable p-n Junction Formation in Monolayer Graphene Using Electrostatic Substrate Engineering". Nano Letters 10, n.º 11 (10 de noviembre de 2010): 4634–39. http://dx.doi.org/10.1021/nl102756r.
Texto completoXu, Dikai, Xuegong Yu, Dace Gao, Cheng Li, Mengyao Zhong, Haiyan Zhu, Shuai Yuan, Zhan Lin y Deren Yang. "Self-generation of a quasi p–n junction for high efficiency chemical-doping-free graphene/silicon solar cells using a transition metal oxide interlayer". Journal of Materials Chemistry A 4, n.º 27 (2016): 10558–65. http://dx.doi.org/10.1039/c6ta02868c.
Texto completoWang, Hong, Xiaoli Zheng, Haining Chen, Keyou Yan, Zonglong Zhu y Shihe Yang. "The nanoscale carbon p–n junction between carbon nanotubes and N,B-codoped holey graphene enhances the catalytic activity towards selective oxidation". Chem. Commun. 50, n.º 56 (2014): 7517–20. http://dx.doi.org/10.1039/c4cc01707b.
Texto completoForrester, Derek Michael y Feodor V. Kusmartsev. "Graphene levitons and anti-levitons in magnetic fields". Nanoscale 6, n.º 13 (2014): 7594–603. http://dx.doi.org/10.1039/c4nr00754a.
Texto completoYu, Tianhua, Chen-Wei Liang, Changdong Kim y Bin Yu. "Local electrical stress-induced doping and formation of monolayer graphene P-N junction". Applied Physics Letters 98, n.º 24 (13 de junio de 2011): 243105. http://dx.doi.org/10.1063/1.3593131.
Texto completoMorozovska, Anna N., Eugene A. Eliseev y Maksym V. Strikha. "Ballistic conductivity of graphene channel with p-n junction at ferroelectric domain wall". Applied Physics Letters 108, n.º 23 (6 de junio de 2016): 232902. http://dx.doi.org/10.1063/1.4953226.
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