Literatura académica sobre el tema "Graphene p-n junction"
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Artículos de revistas sobre el tema "Graphene p-n junction"
Fan, Yan, Tao Wang, Yinwei Qiu, Yinli Yang, Qiubo Pan, Jun Zheng, Songwei Zeng, Wei Liu, Gang Lou y Liang Chen. "Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect". Molecules 26, n.º 22 (13 de noviembre de 2021): 6849. http://dx.doi.org/10.3390/molecules26226849.
Texto completoIndykiewicz, K., C. Bray, C. Consejo, F. Teppe, S. Danilov, S. D. Ganichev y A. Yurgens. "Current-induced enhancement of photo-response in graphene THz radiation detectors". AIP Advances 12, n.º 11 (1 de noviembre de 2022): 115009. http://dx.doi.org/10.1063/5.0117818.
Texto completoLow, Tony, Seokmin Hong, Joerg Appenzeller, Supriyo Datta y Mark S. Lundstrom. "Conductance Asymmetry of Graphene p-n Junction". IEEE Transactions on Electron Devices 56, n.º 6 (junio de 2009): 1292–99. http://dx.doi.org/10.1109/ted.2009.2017646.
Texto completoLiang, Jierui, Ke Xu, Swati Arora, Jennifer E. Laaser y Susan K. Fullerton-Shirey. "Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions". Materials 13, n.º 5 (1 de marzo de 2020): 1089. http://dx.doi.org/10.3390/ma13051089.
Texto completoJung, Min Wook, Woo Seok Song, Sung Myung, Jong Sun Lim, Sun Sook Lee y Ki Seok An. "Formation of Graphene P-N Junction Arrays Using Soft-Lithographic Patterning and Cross-Stacking". Advanced Materials Research 1098 (abril de 2015): 63–68. http://dx.doi.org/10.4028/www.scientific.net/amr.1098.63.
Texto completoZhang, Shu-Hui, Jia-Ji Zhu, Wen Yang y Kai Chang. "Focusing RKKY interaction by graphene P–N junction". 2D Materials 4, n.º 3 (27 de junio de 2017): 035005. http://dx.doi.org/10.1088/2053-1583/aa76d2.
Texto completoLv, Shu-Hui, Shu-Bo Feng y Yu-Xian Li. "Thermopower and conductance for a graphene p–n junction". Journal of Physics: Condensed Matter 24, n.º 14 (13 de marzo de 2012): 145801. http://dx.doi.org/10.1088/0953-8984/24/14/145801.
Texto completoYu, Tianhua, Changdong Kim, Chen-Wei Liang y Bin Yu. "Formation of Graphene p-n Junction via Complementary Doping". IEEE Electron Device Letters 32, n.º 8 (agosto de 2011): 1050–52. http://dx.doi.org/10.1109/led.2011.2158382.
Texto completoPeters, Eva C., Eduardo J. H. Lee, Marko Burghard y Klaus Kern. "Gate dependent photocurrents at a graphene p-n junction". Applied Physics Letters 97, n.º 19 (8 de noviembre de 2010): 193102. http://dx.doi.org/10.1063/1.3505926.
Texto completoLi, Hao, Shubin Su, Chenhui Liang, Ting Zhang, Xuhong An, Meizhen Huang, Haihua Tao et al. "UV Rewritable Hybrid Graphene/Phosphor p–n Junction Photodiode". ACS Applied Materials & Interfaces 11, n.º 46 (28 de octubre de 2019): 43351–58. http://dx.doi.org/10.1021/acsami.9b14461.
Texto completoTesis sobre el tema "Graphene p-n junction"
Mayorov, Alexander. "Tunnelling and noise in GaAs and graphene nanostructures". Thesis, University of Exeter, 2008. http://hdl.handle.net/10036/46914.
Texto completoSamutpraphoot, Polnop. "Anomalous Hall effect and persistent valley currents in graphene p-n junctions/". Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/92691.
Texto completoCataloged from PDF version of thesis.
Includes bibliographical references (pages 39-40).
Dirac particles can exhibit Hall-like transport induced by Berry's gauge field in the absence of magnetic field. We develop a detailed picture of this unusual effect for charge carriers in graphene nanostructures. The Hall effect is nonzero in each valley but is of opposite signs in different valleys, giving rise to charge-neutral valley currents. Our analysis reveals that p-n junctions in graphene support persistent valley currents that remain nonzero in the system ground state (in thermodynamic equilibrium). The valley currents can be controlled via the bias and gate voltages, enabling a variety of potentially useful valley transport phenomena.
by Polnop Samutpraphoot.
S.B.
Kumar, Chandan. "Quantum transport in Graphene Moire Superlattice and p-n junction". Thesis, 2018. https://etd.iisc.ac.in/handle/2005/5428.
Texto completoLee, Wei-Chen y 李威辰. "Sunlight-activated Graphene-heterostructure Transparent Cathodes:Enabling High-performance n-graphene/p-Si Schottky Junction Photovoltaics". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/82319427303022639214.
Texto completo國立臺灣大學
材料科學與工程學研究所
103
Graphene, which consists of a single atom-thick layer of carbon, has a lot of attracting properties such as tunable work function, high transparency and high carrier mobility etc. All these properties make graphene be a promising material to replacing widely-used ITO as transparent conducting electrode. However, compared to well-developed graphene-based anodes, fabricating a stable graphene-based cathode is more difficult because n-type dopants for graphene have limited thermal and chemical stabilities and are also sensitive to the influence of ambient environment. In the first part of this thesis, we developed a novel “sunlight-activated” graphene-heterostructure transparent electrode. Besides, TiOx was found to be an effective n-type dopant for graphene by surface charge transfer process. With only costing a small amount of ultraviolet, TiOx will photo-generates charges under illumination then are transferred toward graphene and further doped it. This photoactive TiOx/graphene heterostructure transparent electrode exhibits excellent tunable electrical properties and is appropriate to fabricate an n-graphene/p-silicon Schottky junction solar cell, even achieving a record-high power efficiency of graphene/p-silicon structure. In the second part, we aim to improve the performance of device in the first part. With more suitable anti-reflective layers, back contact electrodes, and surface passivation, we demonstrate a “trap-free” photoactive n-graphene/p-Si Schottky solar cell with higher short circuit current and open circuit voltage. This device is also an ideal candidate for future derivatives of tandem cells.
Libros sobre el tema "Graphene p-n junction"
Williams, James Ryan. Electronic transport in graphene: P-n junctions, shot noise, and nanoribbons. 2009.
Buscar texto completoCapítulos de libros sobre el tema "Graphene p-n junction"
Liu, Cheng-Hua. "Observation of Quantum Hall Plateau-Plateau Transition and Scaling Behavior of the Zeroth Landau Level in Graphene p-n-p Junction". En Springer Theses, 41–53. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1355-4_5.
Texto completoMreńca-Kolasińska, Alina y Bartłomiej Szafran. "Circular n-p Junctions in Graphene Nanoribbons". En Physics of Quantum Rings, 559–80. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-95159-1_18.
Texto completoGrushevskaya, H. V., G. G. Krylov, S. P. Kruchinin y B. Vlahovic. "Graphene Quantum Dots, Graphene Non-circular n–p–n-Junctions: Quasi-relativistic Pseudo Wave and Potentials". En NATO Science for Peace and Security Series A: Chemistry and Biology, 47–58. Dordrecht: Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-94-024-1304-5_4.
Texto completoLiu, Cheng-Hua. "Distinctive Magnetotransport of Graphene p-n-p Junctions via Resist-Free Fabrication and Controlled Diffusion of Metallic Contact". En Springer Theses, 33–40. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1355-4_4.
Texto completoPandya, Ankur, Vishal Sorathiya y Sunil Lavadiya. "Graphene-Based Nanophotonic Devices". En Recent Advances in Nanophotonics - Fundamentals and Applications. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.93853.
Texto completoRyzhii, V., M. Ryzhii, M. S. Shur y V. Mitin. "Negative Terahertz Dynamic Conductivity in Electrically Induced Lateral p-i-n Junction in Graphene *". En Graphene-Based Terahertz Electronics and Plasmonics, 353–61. Jenny Stanford Publishing, 2020. http://dx.doi.org/10.1201/9780429328398-23.
Texto completo"Graphene Materials for Third Generation Solar Cell Technologies". En Materials for Solar Cell Technologies I, 29–61. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901090-2.
Texto completoRyzhii, M., V. Ryzhii, T. Otsuji, V. Mitin y M. S. Shur. "Electrically-Induced n-i-p Junctions in Multiple Graphene Layer Structures *". En Graphene-Based Terahertz Electronics and Plasmonics, 41–57. Jenny Stanford Publishing, 2020. http://dx.doi.org/10.1201/9780429328398-4.
Texto completoActas de conferencias sobre el tema "Graphene p-n junction"
Moghaddam, Nahid Shayesteh, Mohammad Taghi Ahmadi, Meisam Rahmani, Noraliah Aziziah Amin, Hossein Shayesteh Moghaddam y Razali Ismail. "Monolayer graphene nanoribbon p-n junction". En 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2011. http://dx.doi.org/10.1109/rsm.2011.6088336.
Texto completoLiu, Jingping, Dayan Ban, Safieddin Safavi-Naeini y Huichang Zhao. "Terahertz source with graphene p-n junction". En 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2015. http://dx.doi.org/10.1109/irmmw-thz.2015.7327940.
Texto completoYamakage, A., K. I. Imura, J. Cayssol y Y. Kuramoto. "Spin-orbit effects in graphene p - n junction". En INTERNATIONAL CONFERENCE OF COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING 2009: (ICCMSE 2009). AIP, 2012. http://dx.doi.org/10.1063/1.4771832.
Texto completoSajjad, Redwan N. y Avik W. Ghosha. "Tunable transmission Gap in graphene p-n junction". En 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135255.
Texto completoGu, Tingyi, Nick Petrone, Arend van der Zande, Yilei Li, Austin Cheng, Tony F. Heinz, Philip Kim et al. "Photocurrent gain in graphene-silicon p-i-n junction". En CLEO: Science and Innovations. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/cleo_si.2015.sw4n.4.
Texto completoShamsir, Samira, Laila Parvin Poly y Samia Subrina. "Electrostatic analysis of graphene nanoribbon p-n junction diode". En 2015 IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE). IEEE, 2015. http://dx.doi.org/10.1109/wiecon-ece.2015.7444014.
Texto completoGu, Tingyi, Dun Mao, Tiantian Li y Thomas Kananen. "High Detectivity in CMOS Substrate Powered Graphene p-i-n Junction". En 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID). IEEE, 2019. http://dx.doi.org/10.1109/rapid.2019.8864431.
Texto completoJung, Minkyung, Peter Rickhaus, Simon Zihlmann, Alexander Eichler, Peter Makk y Christian Schonenberger. "High-Frequency Nanomechanical Resonator in a Ballistic Graphene p-n Junction". En 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819098.
Texto completoSutar, Surajit, Everett Comfort y Ji Ung Lee. "Incidence angle-dependent transport across a single graphene p-n junction". En 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135258.
Texto completoPan, Chenyun y Azad Naeemi. "Device- and system-level performance modeling for graphene P-N junction logic". En 2012 13th International Symposium on Quality Electronic Design (ISQED). IEEE, 2012. http://dx.doi.org/10.1109/isqed.2012.6187504.
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