Literatura académica sobre el tema "Graphene-Bilayer and trilayer"
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Artículos de revistas sobre el tema "Graphene-Bilayer and trilayer"
Das, Dhiman Kumar, Sushant Kumar Sahoo, Pranati Purohit y Sukadev Sahoo. "A study on the tensile force and shear strain of trilayer graphene". European Physical Journal Applied Physics 93, n.º 3 (marzo de 2021): 30404. http://dx.doi.org/10.1051/epjap/2021200357.
Texto completoAlisultanov, Z. Z. "Large and tunable thermoelectric effect in single layer graphene on bilayer graphene". Modern Physics Letters B 29, n.º 03 (30 de enero de 2015): 1550003. http://dx.doi.org/10.1142/s0217984915500037.
Texto completoIqbal, M. Z., M. F. Khan, M. W. Iqbal y Jonghwa Eom. "Tuning the electrical properties of exfoliated graphene layers using deep ultraviolet irradiation". J. Mater. Chem. C 2, n.º 27 (2014): 5404–10. http://dx.doi.org/10.1039/c4tc00522h.
Texto completoKe, Feng, Yabin Chen, Ketao Yin, Jiejuan Yan, Hengzhong Zhang, Zhenxian Liu, John S. Tse, Junqiao Wu, Ho-kwang Mao y Bin Chen. "Large bandgap of pressurized trilayer graphene". Proceedings of the National Academy of Sciences 116, n.º 19 (19 de abril de 2019): 9186–90. http://dx.doi.org/10.1073/pnas.1820890116.
Texto completoDo, Thi-Nga, Cheng-Peng Chang, Po-Hsin Shih, Jhao-Ying Wu y Ming-Fa Lin. "Stacking-enriched magneto-transport properties of few-layer graphenes". Physical Chemistry Chemical Physics 19, n.º 43 (2017): 29525–33. http://dx.doi.org/10.1039/c7cp05614a.
Texto completoCobaleda, C., F. Rossella, S. Pezzini, E. Diez, V. Bellani, D. K. Maude y P. Blake. "Quantum Hall effect in bilayer and trilayer graphene". physica status solidi (c) 9, n.º 6 (15 de marzo de 2012): 1411–14. http://dx.doi.org/10.1002/pssc.201100657.
Texto completoChen, Xu-Dong, Wei Xin, Wen-Shuai Jiang, Zhi-Bo Liu, Yongsheng Chen y Jian-Guo Tian. "High-Precision Twist-Controlled Bilayer and Trilayer Graphene". Advanced Materials 28, n.º 13 (29 de enero de 2016): 2563–70. http://dx.doi.org/10.1002/adma.201505129.
Texto completoYuan, Jianhui y K. M. Liew. "Internal friction characteristic and analysis of in-plane natural frequency of trilayer complexes formed from graphenes and boron nitride nanosheets". RSC Adv. 4, n.º 85 (2014): 45425–32. http://dx.doi.org/10.1039/c4ra08926j.
Texto completoZhan, Da, Jia Xu Yan, Zhen Hua Ni, Li Sun, Lin Fei Lai, Lei Liu, Xiang Yang Liu y Ze Xiang Shen. "Bandgap-Opened Bilayer Graphene Approached by Asymmetrical Intercalation of Trilayer Graphene". Small 11, n.º 9-10 (2 de diciembre de 2014): 1177–82. http://dx.doi.org/10.1002/smll.201402728.
Texto completoSADEGHI, HATEF, M. T. AHMADI, S. M. MOUSAVI, RAZALI ISMAIL y MAHDIAR H. GHADIRY. "CHANNEL CONDUCTANCE OF ABA STACKING TRILAYER GRAPHENE NANORIBBON FIELD-EFFECT TRANSISTOR". Modern Physics Letters B 26, n.º 08 (30 de marzo de 2012): 1250047. http://dx.doi.org/10.1142/s0217984912500479.
Texto completoTesis sobre el tema "Graphene-Bilayer and trilayer"
Cela, Devin Artan. "Studies of bilayer and trilayer graphene". Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/83814.
Texto completoCataloged from PDF version of thesis.
Includes bibliographical references (pages 69-76).
Graphene is a single 2-dimensional atomic layer of hexagonally packed carbon atoms. Graphene has a unique combination of thermal, mechanical, and electronic properties, making it a useful tool for learning new physics as well as a material with high potential for applications. Bilayer graphene (2LG) and trilayer graphene (3LG) share many of the interesting properties of its monolayer relative, but with several key differences. This thesis makes use of resonant Raman spectroscopy to characterize these systems and quantify their layer number as well as stacking order in different graphene flakes. Three distinct graphitic systems were studied: bilayer graphene with Bernal stacking, and trilayer graphene with both Bernal and rhombohedral stacking. A number of back-gated bilayer and trilayer graphene devices were created via the method of mechanical exfoliation. The type of stacking and number of layers was confirmed using resonant Raman spectroscopy. Electron beam lithography was used in combination with a positive PMMA resist in order to pattern samples. Metal was then evaporated onto samples to create electrical contacts for use in gated measurements. These samples, along with my procedure, will be used for future measurement by members of the Dresselhaus research group. These gated graphene devices will be used with gate-modulated resonant Raman spectroscopy (GMMRS) in order to explore the electron-phonon properties of AB 2LG, ABA 3LG, and ABC 3LG graphene.
by Devin Artan Cela.
S.B.
Taychatanapat, Thiti. "From Hopping to Ballistic Transport in Graphene-Based Electronic Devices". Thesis, Harvard University, 2013. http://dissertations.umi.com/gsas.harvard:10815.
Texto completoPhysics
Poumirol, Jean-Marie. "Etude des propriétés électroniques du graphène et des matériaux à base de graphène sous champs magnétiques intenses". Thesis, Toulouse, INSA, 2011. http://www.theses.fr/2011ISAT0012/document.
Texto completoThis thesis presents transport measurements on two-dimensional and one-dimensional graphene-based systems under pulsed magnetic field (60T). The objective of this work is to probe the dynamics of charge carriers by changing the density of states of the system by applying a strong magnetic field. The first part is devoted to the study of the influence of electron-hole pockets on the transport properties of graphene near the charge neutrality point. We found the appearance of fluctuations in the magneto-resistance due to the progressive transition of the electron/hole puddles of finite size in the quantum regime as the magnetic field increases. We have also shown that the variation of the Fermi energy, due to the increase of orbital Landau level degeneracy, is directly responsible of a change in the electron and hole ratio. The second part is devoted to the study of graphene nano-ribbons, we explored two different ranges of width. In the broad nano-ribbons of width W larger than 60 nm, the quantification of the resistance is observed, revealing a clear signature of the quantization of the energy spectrum into Landau levels. We show for the first time the effect of valley degeneracy lifting induced by the magnetic confinement of charge carriers at the edges of the armchair nano-ribbons. For narrower nano-ribbons (W <30 nm) in presence of edge defects and charged impurities, the progressive formation of chiral edge states leads to a positive magneto-conductance whatever the carrier density. Finally, the last part of this thesis deals with magneto-transport fingerprints in multi-layer graphene as we observed the quantum Hall effect in tri-layer graphene. A comparative study of the experimental results with numerical simulations was used to determine the rhombohedral stacking of three layers of graphene in the sample
Actas de conferencias sobre el tema "Graphene-Bilayer and trilayer"
Lee, Yongjin, Kevin Myhro, David Tran, Nathaniel Gilgren, Jairo Velasco, Wenzhong Bao, Michael Deo y Chun Ning Lau. "Band gap and correlated phenomena in bilayer and trilayer graphene". En SPIE Defense, Security, and Sensing, editado por Thomas George, M. Saif Islam y Achyut K. Dutta. SPIE, 2013. http://dx.doi.org/10.1117/12.2016521.
Texto completoOviroh, Peter Ozaveshe, Sunday Temitope Oyinbo, Sina Karimzadeh y Tien-Chien Jen. "Multilayer Separation Effects on MoS2 Membranes in Water Desalination". En ASME 2021 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/imece2021-69156.
Texto completode Freitas, Filipe P. R., David Steinberg y Eunezio A. Thoroh de Souza. "Study of Mechanically Exfoliated Monolayer, Bilayer, Trilayer and Multilayer Graphene as Saturable Absorber for Passive Erbium-Doped Fiber Laser Mode-Locking". En 2021 SBFoton International Optics and Photonics Conference (SBFoton IOPC). IEEE, 2021. http://dx.doi.org/10.1109/sbfotoniopc50774.2021.9461975.
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