Bibliografías temáticas / Giant Magnetoresistance and Hall effect

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Literatura académica sobre el tema "Giant Magnetoresistance and Hall effect"

Autor: Grafiati
Publicado: 25 de mayo de 2024

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Artículos de revistas sobre el tema "Giant Magnetoresistance and Hall effect"

1

Huang, Hui, Juanjuan Gu, Ping Ji, et al. "Giant anisotropic magnetoresistance and planar Hall effect in Sr0.06Bi2Se3." Applied Physics Letters 113, no. 22 (2018): 222601. http://dx.doi.org/10.1063/1.5063689.

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Budantsev, M. V., A. G. Pogosov, A. E. Plotnikov, A. K. Bakarov, A. I. Toropov, and J. C. Portal. "Giant hysteresis of magnetoresistance in the quantum hall effect regime." JETP Letters 86, no. 4 (2007): 264–67. http://dx.doi.org/10.1134/s0021364007160102.

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3

Núñez-Regueiro, J. E., D. Gupta, and A. M. Kadin. "Hall effect and giant magnetoresistance in lanthanum manganite thin films." Journal of Applied Physics 79, no. 8 (1996): 5179. http://dx.doi.org/10.1063/1.361331.

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4

Wang, Silin, and Junji Gao. "Overview of Magnetic Field Sensor." Journal of Physics: Conference Series 2613, no. 1 (2023): 012012. http://dx.doi.org/10.1088/1742-6596/2613/1/012012.

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Abstract This article summarizes the commonly used in magnetic sensors Hall sensors, Anisotropic magnetoresistive sensor (AMR), Giant magnetoresistance effect sensor (GMR) and Tunneling magnetoresistance sensor (TMR). The structure and working principle of each sensor are introduced. In addition, some error sources of magnetic sensors and the calibration techniques used are introduced, and some typical application examples of each sensor are introduced.
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5

Bobin, S. B., and A. T. Lonchakov. "Giant Planar Hall Effect in an Ultra-Pure Mercury Selenide Single Crystal Sample." JETP Letters 118, no. 7 (2023): 495–501. http://dx.doi.org/10.1134/s0021364023602658.

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A giant planar Hall effect with an amplitude of about 50 mΩ cm at a temperature of T = 80 K in a magnetic field of 10 T has been detected in an ultra-pure HgSe single crystal sample with an electron density of 5.5 × 1015 cm–3. Its oscillating dependence on the rotation angle of the sample in various magnetic fields has been determined. Attributes (oscillation period, positions of extrema, correlation between the amplitudes of planar Hall and planar longitudinal magnetoresistance) indicate that the planar Hall effect in this nonmagnetic gapless semimetal with an isotropic Fermi surface originates from the chiral anomaly. This is a solid argument for the topological nature of the electronic spectrum of HgSe.
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6

Samoilov, A. V., G. Beach, C. C. Fu, N. C. Yeh, and R. P. Vasquez. "Giant spontaneous Hall effect and magnetoresistance in La1−xCaxCoO3 (0.1⩽x⩽0.5)." Journal of Applied Physics 83, no. 11 (1998): 6998–7000. http://dx.doi.org/10.1063/1.367623.

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7

Xiong, Peng, Gang Xiao, J. Q. Wang, John Q. Xiao, J. Samuel Jiang, and C. L. Chien. "Extraordinary Hall effect and giant magnetoresistance in the granular Co-Ag system." Physical Review Letters 69, no. 22 (1992): 3220–23. http://dx.doi.org/10.1103/physrevlett.69.3220.

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8

Zhang, H., X. Y. Zhu, Y. Xu, et al. "Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet." Journal of Physics: Condensed Matter 34, no. 3 (2021): 034005. http://dx.doi.org/10.1088/1361-648x/ac3102.

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Abstract We report on systematic temperature- and magnetic field-dependent studies of the EuGa4 binary compound, which crystallizes in a centrosymmetric tetragonal BaAl4-type structure with space group I4/mmm. The electronic properties of EuGa4 single crystals, with an antiferromagnetic (AFM) transition at T N ∼ 16.4 K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching ∼ 7 × 1 0 4 % at 2 K in a magnetic field of 9 T. In the AFM state, EuGa4 undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. Below T N, in the ∼4–7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl4-type structure, to which EuGa4 and EuAl4 belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands.
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9

Zhu, L., X. X. Qu, H. Y. Cheng, and K. L. Yao. "Spin-polarized transport properties of the FeCl2/WSe2/FeCl2 van der Waals heterostructure." Applied Physics Letters 120, no. 20 (2022): 203505. http://dx.doi.org/10.1063/5.0091580.

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The discovery of the giant magnetoresistance effect has led to the rapid development of spintronics. Although the half-metals can provide a 100% spin polarization rate and significantly improved giant magnetoresistance, the materials with low Curie temperatures present challenges for their use at room temperature. In an attempt to identify the half-metallic material with high Curie temperatures for spintronics, this study investigates a van der Waals heterostructure with vertically integrated FeCl2/WSe2/FeCl2. The spin-polarized transport properties of the device based on the heterostructure studied by the density function theory combined with nonequilibrium Green's function reveal comprehensive spintronics functions, including giant magnetoresistance, spin filtering, and negative differential resistance effect. The mechanism of the negative differential resistance effect has further been elucidated by the band alignment of the heterostructure under different biases within the bias window.
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10

Blachowicz, Tomasz, Ilda Kola, Andrea Ehrmann, Karoline Guenther, and Guido Ehrmann. "Magnetic Micro and Nano Sensors for Continuous Health Monitoring." Micro 4, no. 2 (2024): 206–28. http://dx.doi.org/10.3390/micro4020015.

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Magnetic micro and nano sensors can be used in a broad variety of applications, e.g., for navigation, automotives, smartphones and also for health monitoring. Based on physical effects such as the well-known magnetic induction, the Hall effect, tunnel magnetoresistance and giant magnetoresistance, they can be used to measure positions, flow, pressure and other physical properties. In biomedicine and healthcare, these miniaturized sensors can be either integrated into garments and other wearables, be directed through the body by passive capsules or active micro-robots or be implanted, which usually necessitates bio-functionalization and avoiding cell-toxic materials. This review describes the physical effects that can be applied in these sensors and discusses the most recent micro and nano sensors developed for healthcare applications.
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