Literatura académica sobre el tema "Ge1–xSnx"
Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros
Consulte las listas temáticas de artículos, libros, tesis, actas de conferencias y otras fuentes académicas sobre el tema "Ge1–xSnx".
Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.
También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.
Artículos de revistas sobre el tema "Ge1–xSnx"
Jang, Han-Soo, Jong Hee Kim, Vallivedu Janardhanam, Hyun-Ho Jeong, Seong-Jong Kim y Chel-Jong Choi. "Microstructural Evolution of Ni-Stanogermanides and Sn Segregation during Interfacial Reaction between Ni Film and Ge1−xSnx Epilayer Grown on Si Substrate". Crystals 14, n.º 2 (28 de enero de 2024): 134. http://dx.doi.org/10.3390/cryst14020134.
Texto completoNakatsuka, Osamu, Yosuke Shimura, Shotaro Takeuchi, Noramasa Tsutsui y Shigeaki Zaima. "Growth and Characterization of Ge1-xSnx Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices". Materials Science Forum 654-656 (junio de 2010): 1788–91. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1788.
Texto completoHuang, Hongjuan, Desheng Zhao, Chengjian Qi, Jingfa Huang, Zhongming Zeng, Baoshun Zhang y Shulong Lu. "Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering". Crystals 12, n.º 12 (12 de diciembre de 2022): 1810. http://dx.doi.org/10.3390/cryst12121810.
Texto completoNakatsuka, Osamu, Shotaro Takeuchi, Yosuke Shimura, Akira Sakai y Shigeaki Zaima. "Strained Ge and Ge1-xSnx Technology for Future CMOS Devices". Key Engineering Materials 470 (febrero de 2011): 146–51. http://dx.doi.org/10.4028/www.scientific.net/kem.470.146.
Texto completoMahmodi, Hadi, Md Hashim, Tetsuo Soga, Salman Alrokayan, Haseeb Khan y Mohamad Rusop. "Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates". Materials 11, n.º 11 (12 de noviembre de 2018): 2248. http://dx.doi.org/10.3390/ma11112248.
Texto completoSun, Sheng Liu, Li Xin Zhang, Wen Qi Huang, Zhen Yu Chen, Hao Wang y Chun Qian Zhang. "First-Principal Investigation of Lattice Constants of Si<sub>1-<i>x</i></sub>Ge<i><sub>x</sub></i>, Si<sub>1-<i>x</i></sub>Sn<i><sub>x</sub></i> and Ge<sub>1-<i>x</i></sub>Sn<i><sub>x</sub></i>". Nano Hybrids and Composites 34 (23 de febrero de 2022): 77–82. http://dx.doi.org/10.4028/p-uk1s72.
Texto completoYu-Chen, Li. "Evaluation of the Key Physical Parameters of Compressive Strained Ge1-x Snx for Optoelectronic Devices". Journal of Computational and Theoretical Nanoscience 13, n.º 10 (1 de octubre de 2016): 7399–407. http://dx.doi.org/10.1166/jctn.2016.5733.
Texto completoConcepción Díaz, Omar, Nicolaj Brink Søgaard, Oliver Krause, Jin Hee Bae, Thorsten Brazda, Andreas T. Tiedemann, Qing-Tai Zhao, Detlev Grützmacher y Dan Buca. "(Si)GeSn Isothermal Multilayer Growth for Specific Applications Using GeH4 and Ge2H6". ECS Meeting Abstracts MA2022-02, n.º 32 (9 de octubre de 2022): 1162. http://dx.doi.org/10.1149/ma2022-02321162mtgabs.
Texto completoWangila, Emmanuel, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu et al. "The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire". Crystals 14, n.º 5 (28 de abril de 2024): 414. http://dx.doi.org/10.3390/cryst14050414.
Texto completoQiu, Yingxin, Runsheng Wang, Qianqian Huang y Ru Huang. "Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor". Journal of Applied Physics 115, n.º 23 (21 de junio de 2014): 234505. http://dx.doi.org/10.1063/1.4883760.
Texto completoTesis sobre el tema "Ge1–xSnx"
Khelidj, Hamza. "Elaboration de films minces semi-conducteurs Ge1-xSnx et leurs contacts ohmiques". Electronic Thesis or Diss., Aix-Marseille, 2021. http://www.theses.fr/2021AIXM0406.
Texto completoThe aim of this thesis is to study the fabrication of Ge1–xSnx thin films semiconductors by magnetron sputtering and their ohmic contacts by reactive diffusion. The crystallization and the crystalline growth of Ge1–xSnx were studied. The crystallization of an amorphous Ge1–xSnx layer deposited at room temperature leads to a polycrystalline growth. In addition, the competition between Ge / Sn phase separation and Ge1–xSnx growth prevents the formation of large-grain Sn-rich Ge1–xSnx films without the formation of β-Sn islands on the surface. However, the growth at T = 360 ° C of a highly relaxed pseudo-coherent Ge0.9Sn0.1 film on Si(100) with a low concentration of impurities (< 2 × 1019 cm–3) and an electrical resistivity four orders of magnitude smaller than undoped Ge was obtained. We have shown that the measurement of the Seebeck coefficient for Ge and Ge1–xSnx thin films allows the determination of the type of doping, the concentration of the charge carriers and the variation of the scattering mechanisms. The solid state reaction of Ni /Ge0.9Sn0.1 shows a sequential growth of two phases. The first phase to form was the Ni5(GeSn)3 phase, which is stable up to 290 ° C. Then, at 275 ° C, the Ni(GeSn) phase was observed. This phase is stable up to 430 ° C. A delay in the formation of the Ni(GeSn) phase compared to the NiGe phase was observed. In addition, the thermal stability of the NiGe phase is highly affected by the addition of Sn. The phase growth kinetics as well as the Sn segregation kinetics in the Ni(GeSn) phase were studied
Esteves, Richard J. "The Dawn of New Quantum Dots: Synthesis and Characterization of Ge1-xSnx Nanocrystals for Tunable Bandgaps". VCU Scholars Compass, 2016. http://scholarscompass.vcu.edu/etd/4637.
Texto completoTallapally, Venkatesham. "Colloidal Synthesis and Photophysical Characterization of Group IV Alloy and Group IV-V Semiconductors: Ge1-xSnx and Sn-P Quantum Dots". VCU Scholars Compass, 2018. https://scholarscompass.vcu.edu/etd/5568.
Texto completoGao, Jia Jun y 高嘉駿. "Graded Ge1-xSnx Photodetectors Fabricated on Si Substrates by Rapid Melt Growth Method". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/51915136403158257287.
Texto completo國立清華大學
光電工程研究所
104
Germanium-Tin (GeSn) semiconductor alloy has been considered as a candidate for implementing active Group IV optoelectronics. In this thesis, a Ge1-xSnx metal-semiconductor-metal (MSM) photodetector fabricated on Si substrate by rapid melt growth method with graded Sn concentration up to 5-10 %, which is higher than the solid solubility (~ 1 %) of Sn in Ge is demonstrated. The crystal orientation and elemental composition of the GeSn alloy are characterized by selected area diffraction (SAD) pattern and energy dispersion spectroscopy (EDS), showing a monocrystalline semiconductor quality and Sn concentration profile. This crystal quality of GeSn alloy is also investigated by Raman spectroscopy. Finally, we measure the photocurrent of the device and verify the GeSn MSM photodetector has a mid-IR photoresponse at wavelength of 2 μm.
Wu, Tzung-Hsian y 吳宗憲. "Investigation of Ge1-xSnx/Ge with high Sn composition grown at low temperature". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/77774823809751561359.
Texto completo國立臺灣大學
電子工程學研究所
99
We report on experimental investigations of the growth of Ge1-xSnx film with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnx films with various Sn compositions up to 14% are deposited on a Ge buffer layer for growth at low temperatures close to the melting point of Sn. Especially, a low temperature Ge buffer layer was grown between GeSn film and Ge substrate for trapping defects. Analysis of various measurements shows that the Ge1-xSnx film is defect free in the XTEM image and that Sn is distributed almost uniformly in the film for Sn compositions up to 9.3%. The Sn composition of the films is higher than the Sn composition that is theoretically predicted to cause the energy band of Ge to change from an indirect to a direct bandgap; thus, the present nvestigation provides a method for growing direct bandgap GeSn film, which is desired for use in applications involving optoelectronic devices.
Hong, Yong-An y 洪永安. "First Principle Study of Band Structures and Optical Properties in Ge1-xSnx Semiconductor Alloy". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/b9dqrw.
Texto completo國立中興大學
精密工程學系所
99
We conduct first-principles total-energy density functional calculations to study the band structures in Ge1-xSnx infrared semiconductor alloys. The sX-LDA(Screened exchange local density approximation) and HSE06(Heyd scuseria ernzerhof hybrid functional) calculations to study the band structure in Ge1-xSnx semiconductor alloys. The norm-conserving optimized pseudopotentials of Ge and Sn have been constructed for lattice constant, band-gap, electronic structure calculations. Our findings show band gap that are predicted to undergo an indirect-to-direct transition for x close to 0.125. The composition-bandgap relationships in Ge1-xSnx lattice are evaluated by a detailed comparison of bonding, electronic, structural properties. The atomic structures play a key role in the indirect-gap to direct-gap transition.
Tsai, Bing-Hung y 蔡秉宏. "Optical Characteristics of Ge1-xSnx alloys and Sn-based Group IV Structure for Resonant Tunneling Diode". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/72004700496434147099.
Texto completo國立臺灣大學
電子工程學研究所
100
In a recent development, tin (Sn)-based group-IV semiconductor compounds has attracted research attention for new electronic and photonic devices. The incorporation of Sn modulates the bandgap of the host IV-IV compounds, and, above a certain Sn composition, the energy band of the IV-IV compounds changes from an indirect to a direct band gap. Here, we investigate a series of Ge1-xSnx alloy with various Sn compositions up to 14% and 17% grown on Ge and Si wafer respectively using low-temperature Molecular Beam Epitaxy. To characterize band structure and optical properties of these GeSn samples, we performed spectroscopic Fourier Transform Infra-Red (FTIR), ellipsometer, and photoluminescence (PL) measurements. The Γ-to-Γ optical energy gap of Ge1-xSnx alloys can be determined by FTIR. Several critical point features, corresponding to E1, E1+Δ1, and E0’ transitions, are observed in ε1 and ε2. The positions of E1 and E1+Δ1 shift toward to lower energy as Sn composition increases. Furthermore, the optoelectronic and electronic devices can be designed for applications by those analyzed. We propose a new design of Sn-based group-IV structure for resonant tunneling diode (RTD). The proposed RTD is composed of direct-bandgap Ge1-xSnx/SiyGezSn1-y-z quantum well which can be directly grown on Si. By optimizing the composition and strain in the quantum well, a high peak-to-valley ratio of 7.69 is obtained. Those results suggest our proposed RTD design can be integrated into CMOS circuits for useful applications.
Chen, Jia-Zhi y 陳佳智. "Characteristics of Ge1-xSnx/Ge superlattices on Ge buffered on Si (001) wafers grown by Molecular Beam Epitaxy". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/18729908565084157900.
Texto completo國立臺灣大學
電子工程學研究所
101
We report the characteristics of Ge1-xSnx/Ge strained layer superlattices ( ) pseudomorphically grown on Ge-buffered on Si(001) wafers by molecular beam epitaxy at low temperature. The crystal quality of the Ge1-xSnx/Ge superlattices was characterized by transmission electron microscopy, atomic force microscopy, and reflection high-energy electron diffraction. The composition and strain states were analyzed by x-ray diffraction and Raman microscopy. The optical spectra were measured by Fourier transform infrared spectroscopy, Photoluminescence, and Photoreflectance to determine the lowest direct-gap transition energies. The observed blue shifts of lowest direct-gap transition energies are attributed to the quantum confinement effect and strain effect, confirmed by our theoretical results using DFT theory. In addition, we also fit the conduction band offset ratio of GeSn/Ge heterostructure by the results of the optical experiments. In this thesis, low dimensional heterostructure of newly group IV material system is investigated. Ge1-xSnx/Ge superlattices are demonstrated by technique of low temperature growth using by Molecular Beam Epitaxy, and presenting characteristics of strained Ge1-xSnx/Ge superlattices (SLs) on Si substrates with x up to 6.96 %. Move a step forward toward the low dimensional Sn-based group IV photonic devices.
Capítulos de libros sobre el tema "Ge1–xSnx"
Mukhopadhyay, Shyamal, Bratati Mukhopadhyay, Gopa Sen y P. K. Basu. "Calculation of Intrinsic Carrier Density of Ge1−xSnx Alloy, Its Temperature Dependence Around Room Temperature and Its Effect on Maximum Electron Mobility". En Computers and Devices for Communication, 551–56. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-8366-7_81.
Texto completoActas de conferencias sobre el tema "Ge1–xSnx"
Zagarzusem, Khurelbaatar, Yeon-Ho Kil, Sim-Hoon Yuk, Taek Sung Kim, Zumuukhorol Munkhsaihan, Chel-Jong Choi y Kyu-Hwan Shim. "Ge1−xSnx/Ge heterostructure infrared photodetector". En 2015 IEEE Sensors. IEEE, 2015. http://dx.doi.org/10.1109/icsens.2015.7370598.
Texto completoHsieh, Wen-Yao, Yu-Hao You, Kun-Mao He, Yu-Hsiang Peng, Guo-En Chang y Henry H. Cheng. "Enhanced infrared photoluminescence from Ge1-xSnx alloys". En JSAP-OSA Joint Symposia. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/jsap.2013.16a_d4_5.
Texto completoBroderick, Christopher A., Edmond J. O'Halloran y Eoin P. O'Reilly. "Comparative analysis of electronic structure evolution in Ge1-xSnx and Ge1−xPbx alloys". En 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2019. http://dx.doi.org/10.1109/nusod.2019.8806886.
Texto completoBaert, Bruno, Dao Y. Nhi Truong, Osamu Nakatsuka, Shigeaki Zaima y Ngoc Duy Nguyen. "Electrical Characterization of P-Ge1-xSnx/P-Ge and P-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy". En 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2012. http://dx.doi.org/10.1109/istdm.2012.6222503.
Texto completoThai, Quang Minh, Mathieu Bertrand, Nicolas Pauc, Joris Aubin, Alexei Tchelnokov, Jean-Michel Hartmann, Vincent Reboud, Vincent Calvo y Jérémie Chrétien. "Lasing in Ge1-xSnx-based photonic crystals (Conference Presentation)". En Semiconductor Lasers and Laser Dynamics, editado por Krassimir Panajotov, Marc Sciamanna y Rainer Michalzik. SPIE, 2018. http://dx.doi.org/10.1117/12.2306951.
Texto completoLan, H. S. y C. W. Liu. "Electron ballistic current enhancement of Ge1−xSnx FinFETs". En 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2014. http://dx.doi.org/10.1109/vlsi-tsa.2014.6839656.
Texto completoGAIDUK, P. I., A. NYLANDSTED LARSEN y J. LUNDSGAARD HANSEN. "SEGREGATION ENHANCED Ge1-xSnx NANOCRYSTAL FORMATION ON SILICON SUBSTRATE". En Reviews and Short Notes to Nanomeeting-2005. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701947_0014.
Texto completoJeschke, Sabina, Olivier Pfeiffer, Joerg Schulze y Marc Wilke. "Crystalline Ge1-xSnx Heterostructures in Lateral High-Speed Devices". En 2010 Fourth International Conference on Quantum, Nano and Micro Technologies (ICQNM). IEEE, 2010. http://dx.doi.org/10.1109/icqnm.2010.17.
Texto completoClaflin, Bruce B., Gordon J. Grzybowski y Joshua M. Duran. "Growth of Ge1-xSnx Alloys for MWIR sensing applications". En International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors, editado por Guru Subramanyam, Partha Banerjee, Akhlesh Lakhtakia y Nian X. Sun. SPIE, 2023. http://dx.doi.org/10.1117/12.2647373.
Texto completoWang, Suyuan, Jun Zheng, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng y Qiming Wang. "P+-Ge1−xSnx / p−-Ge1−x−ySixSny / n-Ge1−x−ySixSny NTFET analysis and the realization of n-Ge1−x−ySixSny ohmic contact". En 2016 16th International Workshop on Junction Technology (IWJT). IEEE, 2016. http://dx.doi.org/10.1109/iwjt.2016.7486667.
Texto completo