Artículos de revistas sobre el tema "GaN Power and THz Devices"
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CHU, K. K., P. C. CHAO y J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT". International Journal of High Speed Electronics and Systems 14, n.º 03 (septiembre de 2004): 738–44. http://dx.doi.org/10.1142/s0129156404002764.
Texto completoNela, Luca, Ming Xiao, Yuhao Zhang y Elison Matioli. "A perspective on multi-channel technology for the next-generation of GaN power devices". Applied Physics Letters 120, n.º 19 (9 de mayo de 2022): 190501. http://dx.doi.org/10.1063/5.0086978.
Texto completoMartín-Guerrero, Teresa M., Damien Ducatteau, Carlos Camacho-Peñalosa y Christophe Gaquière. "GaN devices for power amplifier design". International Journal of Microwave and Wireless Technologies 1, n.º 2 (abril de 2009): 137–43. http://dx.doi.org/10.1017/s1759078709000178.
Texto completoDi, Kuo y Bingcheng Lu. "Gallium Nitride Power Devices in Magnetically Coupled Resonant Wireless Power Transfer Systems". Journal of Physics: Conference Series 2463, n.º 1 (1 de marzo de 2023): 012007. http://dx.doi.org/10.1088/1742-6596/2463/1/012007.
Texto completoRoberts, J., A. Mizan y L. Yushyna. "Optimized High Power GaN Transistors". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (1 de enero de 2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.
Texto completoZhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu y Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate". Materials Science Forum 1014 (noviembre de 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.
Texto completoChowdhury, Sauvik, Zachary Stum, Zhong Da Li, Katsunori Ueno y T. Paul Chow. "Comparison of 600V Si, SiC and GaN Power Devices". Materials Science Forum 778-780 (febrero de 2014): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.971.
Texto completoZhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li y J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices". ECS Meeting Abstracts MA2022-01, n.º 31 (7 de julio de 2022): 1307. http://dx.doi.org/10.1149/ma2022-01311307mtgabs.
Texto completoWu, Ping, Wen Sheng Wei, Jun Ding Zheng, Wei Bo Yang, Chang Li, Ming Chang He y Yi Wan. "Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes". Materials Science Forum 1014 (noviembre de 2020): 157–62. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.157.
Texto completoZhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li y J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices". ECS Transactions 108, n.º 6 (20 de mayo de 2022): 11–20. http://dx.doi.org/10.1149/10806.0011ecst.
Texto completoLiu, An-Chen, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo y Edward Yi Chang. "The Evolution of Manufacturing Technology for GaN Electronic Devices". Micromachines 12, n.º 7 (23 de junio de 2021): 737. http://dx.doi.org/10.3390/mi12070737.
Texto completoUEDA, TETSUZO, YASUHIRO UEMOTO, TSUYOSHI TANAKA y DAISUKE UEDA. "GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS". International Journal of High Speed Electronics and Systems 19, n.º 01 (marzo de 2009): 145–52. http://dx.doi.org/10.1142/s0129156409006199.
Texto completoVobecký, Jan. "The current status of power semiconductors". Facta universitatis - series: Electronics and Energetics 28, n.º 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.
Texto completoRodriguez, Jose A., Tsz Tsoi, David Graves y Stephen B. Bayne. "Evaluation of GaN HEMTs in H3TRB Reliability Testing". Electronics 11, n.º 10 (11 de mayo de 2022): 1532. http://dx.doi.org/10.3390/electronics11101532.
Texto completoKhan, Sahanowaj, Aritra Acharyya, Hiroshi Inokawa, Hiroaki Satoh, Arindam Biswas, Rudra Sankar Dhar, Amit Banerjee y Alexey Y. Seteikin. "Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy". Photonics 10, n.º 7 (10 de julio de 2023): 800. http://dx.doi.org/10.3390/photonics10070800.
Texto completoMcCarthy, L. S., N.-Q. Zhang, H. Xing, B. Moran, S. DenBaars y U. K. Mishra. "High Voltage AlGaN/GaN Heterojunction Transistors". International Journal of High Speed Electronics and Systems 14, n.º 01 (marzo de 2004): 225–43. http://dx.doi.org/10.1142/s0129156404002314.
Texto completoZhang, Wenli, Zhengyang Liu, Fred Lee, Shuojie She, Xiucheng Huang y Qiang Li. "A Gallium Nitride-Based Power Module for Totem-Pole Bridgeless Power Factor Correction Rectifier". International Symposium on Microelectronics 2015, n.º 1 (1 de octubre de 2015): 000324–29. http://dx.doi.org/10.4071/isom-2015-wp11.
Texto completoWu, Nengtao, Zhiheng Xing, Shanjie Li, Ling Luo, Fanyi Zeng y Guoqiang Li. "GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices". Semiconductor Science and Technology 38, n.º 6 (25 de abril de 2023): 063002. http://dx.doi.org/10.1088/1361-6641/acca9d.
Texto completoWaltereit, Patrick, Wolfgang Bronner, Rüdiger Quay, Michael Dammann, Rudolf Kiefer, Wilfried Pletschen, Stefan Müller et al. "AlGaN/GaN epitaxy and technology". International Journal of Microwave and Wireless Technologies 2, n.º 1 (febrero de 2010): 3–11. http://dx.doi.org/10.1017/s175907871000005x.
Texto completoWang, Peng-Fei, Min-Han Mi, Meng Zhang, Qing Zhu, Jie-Jie Zhu, Yu-Wei Zhou, Jun-Wen Chen et al. "Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates". Applied Physics Letters 120, n.º 10 (7 de marzo de 2022): 102103. http://dx.doi.org/10.1063/5.0080320.
Texto completoCarlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu y Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates". Materials Science Forum 924 (junio de 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.
Texto completoLoong, Ling Jin, Chockalingam Aravind Vaithilingam, Gowthamraj Rajendran y Venkatkumar Muneeswaran. "Modelling and analysis of vienna rectifier for more electric aircraft applications using wide band-gap materials". Journal of Physics: Conference Series 2120, n.º 1 (1 de diciembre de 2021): 012027. http://dx.doi.org/10.1088/1742-6596/2120/1/012027.
Texto completoHikita, Masahiro, Hiroaki Ueno, Hisayoshi Matsuo, Tetsuzo Ueda, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka y Daisuke Ueda. "Status of GaN-Based Power Switching Devices". Materials Science Forum 600-603 (septiembre de 2008): 1257–62. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1257.
Texto completoKitchen, Jennifer, Soroush Moallemi y Sumit Bhardwaj. "Multi-chip module integration of Hybrid Silicon CMOS and GaN Technologies for RF Transceivers". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (1 de enero de 2019): 000339–82. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp1_010.
Texto completoNeufeld, Carl, Geetak Gupta, Philip Zuk y Likun Shen. "(Invited) Advances in High Power, High Voltage, Reliable GaN Products for Multi Kilo-Watt Power Conversion Applications." ECS Meeting Abstracts MA2022-02, n.º 37 (9 de octubre de 2022): 1345. http://dx.doi.org/10.1149/ma2022-02371345mtgabs.
Texto completoRoberts, J., T. MacElwee y L. Yushyna. "The Thermal Integrity of Integrated GaN Power Modules". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (1 de enero de 2013): 000061–68. http://dx.doi.org/10.4071/hiten-mp12.
Texto completoSugimoto, M., H. Ueda, T. Uesugi y T. kachi. "WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS". International Journal of High Speed Electronics and Systems 17, n.º 01 (marzo de 2007): 3–9. http://dx.doi.org/10.1142/s012915640700414x.
Texto completoKong, Cen, Jian Jun Zhou, Jin Yu Ni, Yue Chan Kong y Tang Sheng Chen. "High Breakdown Voltage GaN Power HEMT on Si Substrate". Advanced Materials Research 805-806 (septiembre de 2013): 948–53. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.948.
Texto completoGreen, B., H. Henry, K. Moore, J. Abdou, R. Lawrence, F. Clayton, M. Miller et al. "A GAN ON SIC HFET DEVICE TECHNOLOGY FOR WIRELESS INFRASTRUCTURE APPLICATIONS". International Journal of High Speed Electronics and Systems 17, n.º 01 (marzo de 2007): 11–14. http://dx.doi.org/10.1142/s0129156407004151.
Texto completoHenning, Stephan W., Luke Jenkins, Sidni Hale, Christopher G. Wilson, John Tennant, Justin Moses, Mike Palmer y Robert N. Dean. "Manual Assembly of 400um Bumped-Die GaN Power Semiconductor Devices". International Symposium on Microelectronics 2012, n.º 1 (1 de enero de 2012): 000514–23. http://dx.doi.org/10.4071/isom-2012-poster_hale.
Texto completoChao, P. C., Kanin Chu, Jose Diaz, Carlton Creamer, Scott Sweetland, Ray Kallaher, Craig McGray, Glen D. Via y John Blevins. "GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz". MRS Advances 1, n.º 2 (2016): 147–55. http://dx.doi.org/10.1557/adv.2016.176.
Texto completoFaqir, M., A. Manoi, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, H. Blanck, S. Rochette, O. Vendier y M. Kuball. "New GaN Power-Electronics Packaging Solutions: A Thermal Analysis Using Raman Thermography". Journal of Microelectronics and Electronic Packaging 8, n.º 3 (1 de julio de 2011): 110–13. http://dx.doi.org/10.4071/imaps.297.
Texto completoLee, Chwan Ying, Yung Hsiang Chen, Lurng Shehng Lee, Chien Chung Hung, Cheng Tyng Yen, Suh Fang Lin, Rong Xuan, Wei Hung Kuo, Tzu Kun Ku y Ming Jinn Tsai. "Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues". Materials Science Forum 717-720 (mayo de 2012): 1303–6. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1303.
Texto completoMudiyanselage, Dinusha Herath, Dawei Wang, Yuji Zhao y Houqiang Fu. "Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications". Journal of Applied Physics 131, n.º 21 (7 de junio de 2022): 210901. http://dx.doi.org/10.1063/5.0088021.
Texto completoMusumeci, Salvatore, Fabio Mandrile, Vincenzo Barba y Marco Palma. "Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review". Energies 14, n.º 19 (6 de octubre de 2021): 6378. http://dx.doi.org/10.3390/en14196378.
Texto completoFaqir, M., A. Manoi, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, H. Blanck, S. Rochette, O. Vendier y M. Kuball. "New GaN Power-Electronics Packaging Solutions: A Thermal Analysis using Raman Thermography". International Symposium on Microelectronics 2010, n.º 1 (1 de enero de 2010): 000446–49. http://dx.doi.org/10.4071/isom-2010-wa3-paper3.
Texto completoSoh, Mei, T. Teo, S. Selvaraj, Lulu Peng, Don Disney y Kiat Yeo. "Heterogeneous Integration of GaN and BCD Technologies". Electronics 8, n.º 3 (22 de marzo de 2019): 351. http://dx.doi.org/10.3390/electronics8030351.
Texto completoWang, Li y Chun Feng. "The International Research Progress of GaN-Based Microwave Electronic Devices". Advanced Materials Research 1053 (octubre de 2014): 69–73. http://dx.doi.org/10.4028/www.scientific.net/amr.1053.69.
Texto completoAmit, Mr, Dipendra Singh Rawal, Sunil Sharma, Sonalee Kapoor, Robert Liashram, Rupesh K. Chaubey, Seema Vinayak y Rajesh K. Sharma. "Design and Fabrication of Multi-finger Field Plate for Enhancement of AlGaN/GaN HEMT Breakdown Voltage". Defence Science Journal 68, n.º 3 (16 de abril de 2018): 290. http://dx.doi.org/10.14429/dsj.68.12134.
Texto completoRugen, Sarah, Alexander Brunko, Felix Hoffmann y Nando Kaminski. "Power Cycling on Lateral GaN and β-Ga<sub>2</sub>O<sub>3</sub> Transistors". Materials Science Forum 1092 (6 de junio de 2023): 157–64. http://dx.doi.org/10.4028/p-gv3hl2.
Texto completoIslam, Naeemul, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada y Mohd Syamsul. "Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review". Crystals 12, n.º 11 (7 de noviembre de 2022): 1581. http://dx.doi.org/10.3390/cryst12111581.
Texto completoAhmed, Osama, Yousuf Khan, Muhammad A. Butt, Nikolay L. Kazanskiy y Svetlana N. Khonina. "Performance Comparison of Silicon- and Gallium-Nitride-Based MOSFETs for a Power-Efficient, DC-to-DC Flyback Converter". Electronics 11, n.º 8 (12 de abril de 2022): 1222. http://dx.doi.org/10.3390/electronics11081222.
Texto completoMANOHAR, S., A. PHAM, J. BROWN, R. BORGES y K. LINTHICUM. "MICROWAVE GaN-BASED POWER TRANSISTORS ON LARGE-SCALE SILICON WAFERS". International Journal of High Speed Electronics and Systems 13, n.º 01 (marzo de 2003): 265–75. http://dx.doi.org/10.1142/s0129156403001600.
Texto completoCole, Z., B. McGee, J. Stabach, C. B. O'Neal y B. Passmore. "A High Temperature, High Power Density Package for SiC and GaN Power Devices". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (1 de enero de 2015): 000208–13. http://dx.doi.org/10.4071/hiten-session6-paper6_3.
Texto completoUren, Michael J. y Martin Kuball. "Advances in AlGaN/GaN/SiC Microwave Devices". Materials Science Forum 556-557 (septiembre de 2007): 1017–22. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.1017.
Texto completoCui, Yixin, Yingqi Ma, Shipeng Shangguan y Jianwei Han. "Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser". Photonics 9, n.º 4 (18 de abril de 2022): 270. http://dx.doi.org/10.3390/photonics9040270.
Texto completoHaziq, Muhaimin, Norshamsuri Ali, Shaili Falina, Hiroshi Kawarada y Mohd Syamsul. "Impact of Notch Structures on Transfer Characteristics of AlGaN/GaN HEMTs: A Simulation Study". Key Engineering Materials 947 (31 de mayo de 2023): 15–20. http://dx.doi.org/10.4028/p-xxb0t7.
Texto completoBottaro, Enrico, Santi Agatino Rizzo y Nunzio Salerno. "Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review". Energies 15, n.º 9 (7 de mayo de 2022): 3415. http://dx.doi.org/10.3390/en15093415.
Texto completoAnucia A., Josephine, D. Gracia y Jackuline Moni D. "Comparative Analysis of Vertical Nanotube Field Effect Transistor (NTFET) Based on Channel Materials for Low Power Applications". WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 21 (26 de febrero de 2022): 26–33. http://dx.doi.org/10.37394/23201.2022.21.3.
Texto completoQUAH, H. J., K. Y. CHEONG y Z. HASSAN. "FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE DEVELOPMENT OF HIGH POWER APPLICATIONS". Modern Physics Letters B 25, n.º 02 (20 de enero de 2011): 77–88. http://dx.doi.org/10.1142/s021798491102564x.
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