Literatura académica sobre el tema "GaN Power and THz Devices"
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Artículos de revistas sobre el tema "GaN Power and THz Devices"
CHU, K. K., P. C. CHAO y J. A. WINDYKA. "STABLE HIGH POWER GaN-ON-GaN HEMT". International Journal of High Speed Electronics and Systems 14, n.º 03 (septiembre de 2004): 738–44. http://dx.doi.org/10.1142/s0129156404002764.
Texto completoNela, Luca, Ming Xiao, Yuhao Zhang y Elison Matioli. "A perspective on multi-channel technology for the next-generation of GaN power devices". Applied Physics Letters 120, n.º 19 (9 de mayo de 2022): 190501. http://dx.doi.org/10.1063/5.0086978.
Texto completoMartín-Guerrero, Teresa M., Damien Ducatteau, Carlos Camacho-Peñalosa y Christophe Gaquière. "GaN devices for power amplifier design". International Journal of Microwave and Wireless Technologies 1, n.º 2 (abril de 2009): 137–43. http://dx.doi.org/10.1017/s1759078709000178.
Texto completoDi, Kuo y Bingcheng Lu. "Gallium Nitride Power Devices in Magnetically Coupled Resonant Wireless Power Transfer Systems". Journal of Physics: Conference Series 2463, n.º 1 (1 de marzo de 2023): 012007. http://dx.doi.org/10.1088/1742-6596/2463/1/012007.
Texto completoRoberts, J., A. Mizan y L. Yushyna. "Optimized High Power GaN Transistors". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (1 de enero de 2015): 000195–99. http://dx.doi.org/10.4071/hiten-session6-paper6_1.
Texto completoZhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu y Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate". Materials Science Forum 1014 (noviembre de 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.
Texto completoChowdhury, Sauvik, Zachary Stum, Zhong Da Li, Katsunori Ueno y T. Paul Chow. "Comparison of 600V Si, SiC and GaN Power Devices". Materials Science Forum 778-780 (febrero de 2014): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.971.
Texto completoZhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li y J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices". ECS Meeting Abstracts MA2022-01, n.º 31 (7 de julio de 2022): 1307. http://dx.doi.org/10.1149/ma2022-01311307mtgabs.
Texto completoWu, Ping, Wen Sheng Wei, Jun Ding Zheng, Wei Bo Yang, Chang Li, Ming Chang He y Yi Wan. "Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes". Materials Science Forum 1014 (noviembre de 2020): 157–62. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.157.
Texto completoZhang, Yuhao, Ruizhe Zhang, Qihao Song, Qiang Li y J. Liu. "(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices". ECS Transactions 108, n.º 6 (20 de mayo de 2022): 11–20. http://dx.doi.org/10.1149/10806.0011ecst.
Texto completoTesis sobre el tema "GaN Power and THz Devices"
Zhang, Yuhao Ph D. Massachusetts Institute of Technology. "GaN-based vertical power devices". Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/112002.
Texto completoThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 163-170).
Power electronics based on Gallium Nitride (GaN) is expected to significantly reduce the losses in power conversion circuits and increase the power density. This makes GaN devices very exciting candidates for next-generation power electronics, for the applications in electric vehicles, data centers, high-power and high-frequency communications. Currently, both lateral and vertical structures are considered for GaN power devices. In particular, vertical GaN power devices have attracted significant attention recently, due to the potential for achieving high breakdown voltage and current levels without enlarging the chip size. In addition, these vertical devices show superior thermal performance than their lateral counterparts. This PhD thesis addresses several key obstacles in developing vertical GaN power devices. The commercialization of vertical GaN power devices has been hindered by the high cost of bulk GaN. The first project in this PhD thesis demonstrated the feasibility of making vertical devices on a low-cost silicon (Si) substrate for the first time. The demonstrated high performance shows the great potential of low-cost vertical GaN-on-Si devices for 600-V level high-current and high-power applications. This thesis has also studied the origin of the off-state leakage current in vertical GaN pn diodes on Si, sapphire and GaN substrates, by experiments, analytical calculations and TCAD simulations. Variable-range-hopping through threading dislocations was identified as the main off-state leakage mechanism in these devices. The design space of leakage current of vertical GaN devices has been subsequently derived. Thirdly, a novel GaN vertical Schottky rectifier with trench MIS structures and trench field rings was demonstrated. The new structure greatly enhanced the reverse blocking characteristics while maintaining a Schottky-like good forward conduction. This new device shows great potential for using advanced vertical Schottky rectifiers for high-power and high-frequency applications. Finally, we investigated a fundamental and significant challenge for GaN power devices: the lack of reliable and generally useable patterned pn junctions. Two approaches have been proposed to make lateral patterned pn junctions. Two devices, junction barrier Schottky devices and super-junction devices, have been designed and optimized. Preliminary experimental results were also demonstrated for the feasibility of making patterned pn junctions and fabricating novel power devices.
by Yuhao Zhang.
Ph. D.
Unni, Vineet. "Next-generation GaN power semiconductor devices". Thesis, University of Sheffield, 2015. http://etheses.whiterose.ac.uk/11984/.
Texto completoNakazawa, Satoshi. "Interface Charge Engineering in AlGaN/GaN Heterostructures for GaN Power Devices". Kyoto University, 2019. http://hdl.handle.net/2433/244553.
Texto completoLui, Dawei. "Active gate driver design for GaN FET power devices". Thesis, University of Bristol, 2017. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.730883.
Texto completoKumar, Ashwani. "Novel approaches to power efficient GaN and negative capacitance devices". Thesis, University of Sheffield, 2018. http://etheses.whiterose.ac.uk/22492/.
Texto completoLi, Ke. "Wide bandgap (SiC/GaN) power devices characterization and modeling : application to HF power converters". Thesis, Lille 1, 2014. http://www.theses.fr/2014LIL10080/document.
Texto completoCompared to traditional silicon (Si) semiconductor material, wide bandgap (WBG) materials like silicon carbide (SiC) and gallium nitride are gradually applied to fabricate power semiconductor devices, which are used in power converters to achieve high power efficiency, high operation temperature and high switching frequency. As those power devices are relatively new, their characterization and modeling are important to better understand their characteristics for better use. This dissertation is mainly focused on those WBG power semiconductor devices characterization, modeling and fast switching currents measurement. In order to measure their static characteristics, a single-pulse method is presented. A SiC diode and a "normally-off" SiC JFET is characterized by this method from ambient temperature to their maximal junction temperature with the maximal power dissipation around kilowatt. Afterwards, in order to determine power device inter-electrode capacitances, a measurement method based on the use of multiple current probes is proposed and validated by measuring inter-electrode capacitances of power devices of different technologies. Behavioral models of a Si diode and the SiC JFET are built by using the results of the above characterization methods, by which the evolution of the inter-electrode capacitances for different operating conditions are included in the models. Power diode models are validated with the measurements, in which the current is measured by a proposed current surface probe
Brooks, Clive Raymond. "GaN microwave power FET nonlinear modelling techniques". Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/4306.
Texto completoENGLISH ABSTRACT: The main focus of this thesis is to document the formulation, extraction and validation of nonlinear models for the on-wafer gallium nitride (GaN) high-electron mobility (HEMT) devices manufactured at the Interuniversity Microelectronics Centre (IMEC) in Leuven, Belgium. GaN semiconductor technology is fast emerging and it is expected that these devices will play an important role in RF and microwave power amplifier applications. One of the main advantages of the new GaN semiconductor technology is that it combines a very wide band-gap with high electron mobility, which amounts to higher levels of gain at very high frequencies. HEMT devices based on GaN, is a fairly new technology and not many nonlinear models have been proposed in literature. This thesis details the design of hardware and software used in the development of the nonlinear models. An intermodulation distortion (IMD) measurement setup was developed to measure the second and higher-order derivative of the nonlinear drain current. The derivatives are extracted directly from measurements and are required to improve the nonlinear model IMD predictions. Nonlinear model extraction software was developed to automate the modelling process, which was fundamental in the nonlinear model investigation. The models are implemented in Agilent’s Advanced Design System (ADS) and it is shown that the models are capable of accurately predicting the measured S-parameters, large-signal singletone and two-tone behaviour of the GaN devices.
AFRIKAANSE OPSOMMING: Die hoofdoel van hierdie tesis is om die formulering, ontrekking en validasie van nie-lineêre modelle vir onverpakte gallium nitraat (GaN) hoë-elektronmobilisering transistors (HEMTs) te dokumenteer. Die transistors is vervaaardig by die Interuniversity Microelectronics Centre (IMEC) in Leuven, België. GaN-halfgeleier tegnologie is besig om vinnig veld te wen en daar word voorspel dat hierdie transistors ʼn belangrike rol gaan speel in RF en mikrogolf kragversterker toepassings. Een van die hoof voordele van die nuwe GaN-halfgeleier tegnologie is dat dit 'n baie wyd band-gaping het met hoë-elektronmobilisering, wat lei tot hoë aanwins by mikrogolf frekwensies. GaN HEMTs is 'n redelik nuwe tegnologie en nie baie nie-lineêre modelle is al voorgestel in literatuur nie. Hierdie tesis ondersoek die ontwerp van die hardeware en sagteware soos gebruik in die ontwikkeling van nie-lineêre modelle. 'n Intermodulasie distorsie-opstelling (IMD-opstelling) is ontwikkel vir die meting van die tweede en hoër orde afgeleides van die nie-lineêre stroom. Die afgeleides is direk uit die metings onttrek en moet die nie-lineêre IMD-voorspellings te verbeter. Nie-lineêre onttrekking sagteware is ontwikkel om die modellerings proses te outomatiseer. Die modelle word geïmplementeer in Agilent se Advanced Design System (ADS) en bewys dat die modelle in staat is om akkurate afgemete S-parameters, grootsein enkeltoon en tweetoon gedrag van die GaN-transistors te kan voorspel.
Borga, Matteo. "Characterization and modeling of GaN-based transistors for power applications". Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3422355.
Texto completoWaller, William Michael. "Optimisation of AlGaN/GaN power devices : interface analysis, fieldplate control and current collapse". Thesis, University of Bristol, 2018. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.743050.
Texto completoMurillo, Carrasco Luis. "Modelling, characterisation and application of GaN switching devices". Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/modelling-characterisation-and-application-of-gan-switching-devices(a227368d-1029-4005-950c-2a098a5c5633).html.
Texto completoLibros sobre el tema "GaN Power and THz Devices"
Meneghini, Matteo, Gaudenzio Meneghesso y Enrico Zanoni, eds. Power GaN Devices. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-43199-4.
Texto completoCommittee, New Jersey Legislature General Assembly Environment and Solid Waste. Committee meeting of Assembly Environment and Solid Waste Committee: Assembly bill nos. 409 and 2439 : discussion on the implementation of the phase II California Low Emission Vehicle program beginning in calendar year 2006. Trenton, N.J: Office of Legislative Services, Public Information Office, Hearing Unit, 2002.
Buscar texto completoNew Jersey. Legislature. General Assembly. Environment and Solid Waste Committee. Committee meeting of Assembly Environment and Solid Waste Committee: Testimony related to the potential license extension for the Oyster Creek Nuclear Generating Station : Lacey Township Middle School, Forked River, New Jersey, February 10, 2005, 7:00 p.m. Trenton, NJ: Office of Legislative Services, Public Information Office, Hearing Unit, 2005.
Buscar texto completoCommittee, New Jersey Legislature General Assembly Environment and Solid Waste. Committee meeting of Assembly Environment and Solid Waste Committee: Assembly bill no. 3301: the Global Warming Response Act : Committee Room 9, State House Annex, Trenton, New Jersey, February 26, 2007, 2:00 p.m. Trenton, NJ: New Jersey State Legislature, Assembly Environment and Solid Waste Committee, 2007.
Buscar texto completoOffice, General Accounting. Air pollution: Air quality implications of alternative fuels : report to the chairman, Subcommittee on Energy and Power, Committee on Energy and Commerce, House of Representatives. Washington, D.C: The Office, 1990.
Buscar texto completoOffice, General Accounting. Air pollution: Estimated benefits and costs of the Navajo Generating Station's emissions limit : report to the Chairman, Subcommittee on Water and Power Resources, Committee on Resources, House of Representatives. Washington, D.C. (P.O. Box 37050, Washington, D.C. 20013): The Office, 1998.
Buscar texto completoOffice, General Accounting. Air pollution: EPA could take additional steps to help maximize the benefits from the 2007 diesel emissions standards. Washington, D.C: United States, General Accounting Office, 2004.
Buscar texto completoUnited States. Congress. House. Committee on Energy and Commerce. Subcommittee on Health and the Environment., ed. Air pollution: Impact of the White House entities on two clean air rules : report to the Chairman, Subcommittee on Health and the Environment, Committee on Energy and Commerce, House of Representatives. Washington, D.C: The Office, 1993.
Buscar texto completoOffice, General Accounting. Air pollution: Prior indoor air quality problems at the National Institute of Environmental Health Sciences : report to the Honorable Lauch Faircloth, U.S. Senate. Washington, D.C. (P.O. Box 37050, Washington, D.C. 20013): The Office, 1998.
Buscar texto completoOffice, General Accounting. Air pollution: State planning requirements will continue to challenge EPA and the states : report to the chairman, Committee on Energy and Commerce, House of Representatives. Washington, D.C: GAO, 1993.
Buscar texto completoCapítulos de libros sobre el tema "GaN Power and THz Devices"
Bin, Dong. "9 The Packaging Technologies for GaN HEMTs". En Gallium Nitride Power Devices, 261–80. CRC Press Taylor & Francis Group 6000 Broken Sound Parkway NW, Suite 300 Boca Raton, FL 33487-2742: CRC Press, 2017. http://dx.doi.org/10.1201/9781315196626-10.
Texto completoChowdhury, Srabanti. "Power Conversion and the Role of GaN". En Handbook of GaN Semiconductor Materials and Devices, 329–45. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-10.
Texto completoSertel, Kubilay y Georgios C. Trichopoulos. "Non-contact Metrology for mm-Wave and THz Electronics". En High-Frequency GaN Electronic Devices, 283–99. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_10.
Texto completoZekentes, Konstantinos, Victor Veliadis, Sei-Hyung Ryu, Konstantin Vasilevskiy, Spyridon Pavlidis, Arash Salemi y Yuhao Zhang. "SiC and GaN Power Devices". En More-than-Moore Devices and Integration for Semiconductors, 47–104. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-21610-7_2.
Texto completoMeneghesso, Gaudenzio, Enrico Zanoni, Matteo Meneghini, Maria Ruzzarin y Isabella Rossetto. "Reliability of GaN-Based Power Devices". En Integrated Circuits and Systems, 75–99. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77994-2_4.
Texto completoAhirwar, Archana, Poonam Singh, S. K. Tomar, Meena Mishra, Ashok Kumar y B. K. Sehgal. "GaN HEMT Based S-Band Power Amplifier". En Physics of Semiconductor Devices, 75–76. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_17.
Texto completoCoffie, Robert L. "High Power High Frequency Transistors: A Material’s Perspective". En High-Frequency GaN Electronic Devices, 5–41. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_2.
Texto completoMoens, Peter, Aurore Constant y Abhishek Banerjee. "Reliability Aspects of 650-V-Rated GaN Power Devices". En Power Electronics and Power Systems, 319–44. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-43199-4_14.
Texto completoBader, Samuel James, Keisuke Shinohara y Alyosha Molnar. "Linearity Aspects of High Power Amplification in GaN Transistors". En High-Frequency GaN Electronic Devices, 83–107. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-20208-8_4.
Texto completoMishra, Umesh K. y Matthew Guidry. "Lateral GaN Devices for Power Applications (from kHz to GHz)". En Power Electronics and Power Systems, 69–99. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-43199-4_4.
Texto completoActas de conferencias sobre el tema "GaN Power and THz Devices"
Buchta, M., J. Thorpe, H. Blanck, K. Beilenhoff, D. Floriot, M. Kuball, T. Mrotzek, S. Knippscheer, F. Courtade y A. Xiong. "Influence of packaging materials on GaN RF power devices". En 2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). IEEE, 2015. http://dx.doi.org/10.1109/imws-amp.2015.7324949.
Texto completoChristensen, Adam y Samuel Graham. "Heat Dissipation in GaN Power Semiconductor Devices". En ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61525.
Texto completoLidow, Alex. "The Path Forward for GaN Power Devices". En 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). IEEE, 2020. http://dx.doi.org/10.1109/wipdaasia49671.2020.9360274.
Texto completoZhou, J. J., X. Dong, C. Kong, Y. C. Kong, C. J. Ren, Z. H. Li, T. S. Chen, C. Chen y B. Zhang. "Developing the Ka-band GaN power HEMT devices". En 2012 5th Global Symposium on Millimeter Waves (GSMM 2012). IEEE, 2012. http://dx.doi.org/10.1109/gsmm.2012.6314414.
Texto completoKachi, Tetsu. "State-of-the-art GaN vertical power devices". En 2015 IEEE International Electron Devices Meeting (IEDM). IEEE, 2015. http://dx.doi.org/10.1109/iedm.2015.7409708.
Texto completoKaplar, Robert, Andrew Allerman, Mary Crawford, Brendan Gunning, Jack Flicker, Andrew Armstrong, Luke Yates et al. "Vertical GaN Devices for Medium-Voltage Power Electronics." En Proposed for presentation at the IEEE Energy Conversion Congress & Expo (ECCE 2021) - Virtual held October 10-14, 2021 in , . US DOE, 2021. http://dx.doi.org/10.2172/1891243.
Texto completoChen, Kevin J., Jin Wei, Gaofei Tang, Han Xu, Zheyang Zheng, Li Zhang y Wenjie Song. "Planar GaN Power Integration – The World is Flat". En 2020 IEEE International Electron Devices Meeting (IEDM). IEEE, 2020. http://dx.doi.org/10.1109/iedm13553.2020.9372069.
Texto completoBriere, Michael A. "The Power Electronics Market and the Status of GaN Based Power Devices". En 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2011. http://dx.doi.org/10.1109/csics.2011.6062462.
Texto completo"Quantum, Power, and Compound Semiconductor Devices - Breaking the Limits: Si, SIC and GaN Power Switching Devices". En 2006 International Electron Devices Meeting. IEEE, 2006. http://dx.doi.org/10.1109/iedm.2006.346928.
Texto completoSuda, Jun. "SiC and GaN from the viewpoint of vertical power devices". En 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548292.
Texto completoInformes sobre el tema "GaN Power and THz Devices"
Baker, Bryant. A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices. Portland State University Library, enero de 2000. http://dx.doi.org/10.15760/etd.1780.
Texto completoBajwa, Abdullah y Timothy Jacobs. PR-457-17201-R02 Residual Gas Fraction Estimation Based on Measured Engine Parameters. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), febrero de 2019. http://dx.doi.org/10.55274/r0011558.
Texto completoHopper. L30500 Analysis of the Effects of High-Voltage Direct-Current Transmission Systems on Buried Pipelines. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), enero de 2008. http://dx.doi.org/10.55274/r0010196.
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