Artículos de revistas sobre el tema "GaN. InN. InGaN"
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SEO*, Hye-Won. "Enhanced InN Solid Solubility in Pseudo-Binary InN-GaN (InGaN) Nanostructures". New Physics: Sae Mulli 66, n.º 11 (30 de noviembre de 2016): 1440–43. http://dx.doi.org/10.3938/npsm.66.1440.
Texto completoPopov, Maxim N., Jürgen Spitaler, Lorenz Romaner, Natalia Bedoya-Martínez y René Hammer. "Bayesian Optimization of Hubbard U’s for Investigating InGaN Superlattices". Electronic Materials 2, n.º 3 (5 de agosto de 2021): 370–81. http://dx.doi.org/10.3390/electronicmat2030025.
Texto completoKangawa, Yoshihiro, Tomonori Ito, Yoshinao Kumagai y Akinori Koukitu. "Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE". Applied Surface Science 216, n.º 1-4 (junio de 2003): 453–57. http://dx.doi.org/10.1016/s0169-4332(03)00396-9.
Texto completoLai, Wei-Chih, Cheng-Hsiung Yen y Shoou-Jinn Chang. "GaN-Based Green-Light-Emitting Diodes with InN/GaN Growth-Switched InGaN Wells". Applied Physics Express 6, n.º 10 (1 de octubre de 2013): 102101. http://dx.doi.org/10.7567/apex.6.102101.
Texto completoGeerts, Wim, J. D. Mackenzie, C. R. Abernathy, S. J. Pearton y Thomas Schmiedel. "Electrical transport in p-GaN, n-InN and n-InGaN". Solid-State Electronics 39, n.º 9 (septiembre de 1996): 1289–94. http://dx.doi.org/10.1016/0038-1101(96)00047-0.
Texto completoKusakabe, Kazuhide, Daichi Imai, Ke Wang y Akihiko Yoshikawa. "InN/GaN short-period superlattices as ordered InGaN ternary alloys". physica status solidi (c) 13, n.º 5-6 (9 de diciembre de 2015): 205–8. http://dx.doi.org/10.1002/pssc.201510306.
Texto completoYu, Chun-Ta, Wei-Chih Lai, Cheng-Hsiung Yen y Shoou-Jinn Chang. "InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes". Optical Materials Express 3, n.º 11 (24 de octubre de 2013): 1952. http://dx.doi.org/10.1364/ome.3.001952.
Texto completoHazari, Arnab, Md Zunaid Baten, Lifan Yan, Joanna M. Millunchick y Pallab Bhattacharya. "An InN/InGaN/GaN nanowire array guided wave photodiode on silicon". Applied Physics Letters 109, n.º 19 (7 de noviembre de 2016): 191102. http://dx.doi.org/10.1063/1.4967439.
Texto completoLi, Yi, Bin Liu, Rong Zhang, Zili Xie y Youdou Zheng. "Investigation of optical properties of InGaN–InN–InGaN/GaN quantum-well in the green spectral regime". Physica E: Low-dimensional Systems and Nanostructures 44, n.º 4 (enero de 2012): 821–25. http://dx.doi.org/10.1016/j.physe.2011.12.014.
Texto completoZhou, X. W. y R. E. Jones. "A Stillinger-Weber Potential for InGaN". Journal of Materials Science Research 6, n.º 4 (27 de septiembre de 2017): 88. http://dx.doi.org/10.5539/jmsr.v6n4p88.
Texto completoIslam, SM, Vladimir Protasenko, Sergei Rouvimov, Huili (Grace) Xing y Debdeep Jena. "High-quality InN films on GaN using graded InGaN buffers by MBE". Japanese Journal of Applied Physics 55, n.º 5S (25 de abril de 2016): 05FD12. http://dx.doi.org/10.7567/jjap.55.05fd12.
Texto completoKim, Taek-Seung, Sang-Woo Kim, Han-Ki Kim y Ji-Myon Lee. "Surface confinement of the InN-rich phase in thick InGaN on GaN". Superlattices and Microstructures 40, n.º 4-6 (octubre de 2006): 545–50. http://dx.doi.org/10.1016/j.spmi.2006.08.003.
Texto completoNakano, Yoshitaka, Liwen Sang y Masatomo Sumiya. "Electrical Characterization of Thick InGaN Films for Photovoltaic Applications". MRS Proceedings 1635 (2014): 29–34. http://dx.doi.org/10.1557/opl.2014.205.
Texto completoXiang, Leilei, Enming Zhang, Wenyu Kang, Wei Lin y Junyong Kang. "Material Design of Ultra-Thin InN/GaN Superlattices for a Long-Wavelength Light Emission". Micromachines 15, n.º 3 (1 de marzo de 2024): 361. http://dx.doi.org/10.3390/mi15030361.
Texto completoMuthuraj, Vineeta R., Wenjian Liu, Henry Collins, Weiyi Li, Robert Hamwey, Steven P. DenBaars, Umesh K. Mishra y Stacia Keller. "N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization". Crystals 13, n.º 4 (19 de abril de 2023): 699. http://dx.doi.org/10.3390/cryst13040699.
Texto completoChan, Michael C. Y., Kwok-On Tsang, E. Herbert Li y Steven P. Denbaars. "Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 642–47. http://dx.doi.org/10.1557/s1092578300003185.
Texto completoTu, Ru-Chin, Chang-Cheng Chuo, Shyi-Ming Pan, Yu-Mei Fan, Ching-En Tsai, Te-Chung Wang, Chun-Ju Tun, Gou-Chung Chi, Bing-Chi Lee y Chien-Ping Lee. "Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting anin siturough SiNx interlayer inn-GaN layers". Applied Physics Letters 83, n.º 17 (27 de octubre de 2003): 3608–10. http://dx.doi.org/10.1063/1.1622441.
Texto completoCheng, Yung-Chen, Cheng-Ming Wu, Meng-Kuo Chen, C. C. Yang, Zhe-Chuan Feng, Gang Alan Li, Jer-Ren Yang, Andreas Rosenauer y Kung-Je Ma. "Improvements of InGaN∕GaN quantum-well interfaces and radiative efficiency with InN interfacial layers". Applied Physics Letters 84, n.º 26 (28 de junio de 2004): 5422–24. http://dx.doi.org/10.1063/1.1767603.
Texto completoHu, F. R., K. Ochi, Y. Zhao y K. Hane. "InGaN/GaN quantum-well nanocolumn crystals on pillared Si substrate with InN as interlayer". physica status solidi (c) 4, n.º 7 (junio de 2007): 2338–41. http://dx.doi.org/10.1002/pssc.200674734.
Texto completoDas, Aparna. "A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations -=SUP=-*-=/SUP=-". Оптика и спектроскопия 130, n.º 3 (2022): 376. http://dx.doi.org/10.21883/os.2022.03.52165.1549-21.
Texto completoHwang, Jeongwoo, Kwanjae Lee, Jin Soo Kim, Cheul-Ro Lee, In-Hwan Lee, Kwangjae Lee, Jin Hong Lee et al. "Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer". Journal of Crystal Growth 370 (mayo de 2013): 109–13. http://dx.doi.org/10.1016/j.jcrysgro.2012.08.049.
Texto completoMoses, Poul Georg, Maosheng Miao, Qimin Yan y Chris G. Van de Walle. "Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN". Journal of Chemical Physics 134, n.º 8 (28 de febrero de 2011): 084703. http://dx.doi.org/10.1063/1.3548872.
Texto completoАндреев, Б. А., Д. Н. Лобанов, Л. В. Красильникова, К. Е. Кудрявцев, А. В. Новиков, П. А. Юнин, М. А. Калинников, Е. В. Скороходов, М. В. Шалеев y З. Ф. Красильник. "Особенности структурных и оптических свойств InGaN-слоев, полученных методом МПЭ ПА с импульсной подачей потоков металлов". Физика и техника полупроводников 55, n.º 9 (2021): 766. http://dx.doi.org/10.21883/ftp.2021.09.51292.22.
Texto completoJafar, Naveed, Jianliang Jiang, Heng Lu, Muhammad Qasim y Hengli Zhang. "Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency". Crystals 13, n.º 12 (23 de noviembre de 2023): 1623. http://dx.doi.org/10.3390/cryst13121623.
Texto completoYu, Chun-Ta, Wei-Chih Lai, Cheng-Hsiung Yen, Hsu-Cheng Hsu y Shoou-Jinn Chang. "Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN". Optics Express 22, S3 (19 de marzo de 2014): A633. http://dx.doi.org/10.1364/oe.22.00a633.
Texto completoShioda, Tomonari, Masakazu Sugiyama, Yukihiro Shimogaki y Yoshiaki Nakano. "Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range". Journal of Crystal Growth 311, n.º 10 (mayo de 2009): 2809–12. http://dx.doi.org/10.1016/j.jcrysgro.2009.01.013.
Texto completoNagai, Katsuya, Toru Akiyama, Kohji Nakamura y Tomonori Ito. "A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate". ECS Meeting Abstracts MA2020-02, n.º 26 (23 de noviembre de 2020): 1831. http://dx.doi.org/10.1149/ma2020-02261831mtgabs.
Texto completoNagai, Katsuya, Toru Akiyama, Kohji Nakamura y Tomonori Ito. "A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate". ECS Transactions 98, n.º 6 (23 de septiembre de 2020): 155–64. http://dx.doi.org/10.1149/09806.0155ecst.
Texto completoChandrasekhar, D., D. J. Smith, S. Strite, M. E. Lin y H. Morkoc. "Characterization of group Ill-nitrides by high-resolution electron microscopy". Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 846–47. http://dx.doi.org/10.1017/s0424820100171961.
Texto completoNee, Tzer-En, Jen-Cheng Wang, Bo-Yan Zhong, Jui-Ju Hsiao y Ya-Fen Wu. "Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes". Nanomaterials 11, n.º 6 (30 de mayo de 2021): 1449. http://dx.doi.org/10.3390/nano11061449.
Texto completoChe, Song-Bek, Wataru Terashima, Yoshihiro Ishitani, Akihiko Yoshikawa, Takeyoshi Matsuda, Hirotatsu Ishii y Seikoh Yoshida. "Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy". Applied Physics Letters 86, n.º 26 (27 de junio de 2005): 261903. http://dx.doi.org/10.1063/1.1954877.
Texto completoKadys, A., T. Malinauskas, T. Grinys, M. Dmukauskas, J. Mickevičius, J. Aleknavičius, R. Tomašiūnas et al. "Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition". Journal of Electronic Materials 44, n.º 1 (12 de noviembre de 2014): 188–93. http://dx.doi.org/10.1007/s11664-014-3494-6.
Texto completoZhang, Zi-Hui, Wei Liu, Zhengang Ju, Swee Tiam Tan, Yun Ji, Zabu Kyaw, Xueliang Zhang, Liancheng Wang, Xiao Wei Sun y Hilmi Volkan Demir. "InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination". Applied Physics Letters 105, n.º 3 (21 de julio de 2014): 033506. http://dx.doi.org/10.1063/1.4891334.
Texto completoReed, M. L., E. D. Readinger, C. G. Moe, H. Shen, M. Wraback, A. Syrkin, A. Usikov, O. V. Kovalenkov y V. A. Dmitriev. "Benefits of negative polarization charge inn-InGaN onp-GaN single heterostructure light emitting diode withp-side down". physica status solidi (c) 6, n.º 2 (febrero de 2009): 585–88. http://dx.doi.org/10.1002/pssc.200880401.
Texto completoChe, Songbek, Akihiko Yuki, Hiroshi Watanabe, Yoshihiro Ishitani y Akihiko Yoshikawa. "Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region". Applied Physics Express 2 (23 de enero de 2009): 021001. http://dx.doi.org/10.1143/apex.2.021001.
Texto completoPhước, Dương Đình y Đinh Như Thảo. "SỰ KẾT CẶP CỦA PHONON-PLASMON QUANG DỌC TRONG CÁC LỚP BÁN DẪN InGaN". Hue University Journal of Science: Natural Science 130, n.º 1A (10 de marzo de 2021): 13–21. http://dx.doi.org/10.26459/hueunijns.v130i1a.5964.
Texto completoEmanuel Thomet, Jonathan, Aman Kamlesh Singh, Mélanie Nelly Rouèche, Nils Toggwyler, Franz-Josef Haug, Gabriel Christmann, Sylvain Nicolay et al. "Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition". Journal of Vacuum Science & Technology A 40, n.º 6 (diciembre de 2022): 063102. http://dx.doi.org/10.1116/6.0002039.
Texto completoJustice, J., A. Kadiyala, J. Dawson y D. Korakakis. "Group III-Nitride Based Electronic and Optoelectronic Integrated Circuits for Smart Lighting Applications". MRS Proceedings 1492 (2013): 123–28. http://dx.doi.org/10.1557/opl.2013.369.
Texto completoYarar, Z., B. Ozdemir y M. Ozdemir. "Transport and Mobility Properties of Bulk Indium Nitride (InN) and a Two-Dimensional Electron Gas in an InGaN/GaN Quantum Well". Journal of Electronic Materials 36, n.º 10 (11 de septiembre de 2007): 1303–12. http://dx.doi.org/10.1007/s11664-007-0210-9.
Texto completoŁepkowski, S. P. y J. A. Majewski. "Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells". Solid State Communications 131, n.º 12 (septiembre de 2004): 763–67. http://dx.doi.org/10.1016/j.ssc.2004.07.002.
Texto completoPoliani, E., M. R. Wagner, J. S. Reparaz, M. Mandl, M. Strassburg, X. Kong, A. Trampert, C. M. Sotomayor Torres, A. Hoffmann y J. Maultzsch. "Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering". Nano Letters 13, n.º 7 (28 de junio de 2013): 3205–12. http://dx.doi.org/10.1021/nl401277y.
Texto completoKangawa, Y., T. Ito, Y. Kumagai y A. Koukitu. "Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE". physica status solidi (c), n.º 7 (diciembre de 2003): 2575–79. http://dx.doi.org/10.1002/pssc.200303538.
Texto completoAbboudi, Hassan, Haddou EL Ghazi, Redouane En-nadir, Mohamed A. Basyooni-M. Kabatas, Anouar Jorio y Izeddine Zorkani. "Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness". Nanomaterials 14, n.º 1 (1 de enero de 2024): 104. http://dx.doi.org/10.3390/nano14010104.
Texto completoKent, P. R. C., Gus L. W. Hart y Alex Zunger. "Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys". Applied Physics Letters 81, n.º 23 (2 de diciembre de 2002): 4377–79. http://dx.doi.org/10.1063/1.1524299.
Texto completoListya Ningrum, Andi Alfina y A. Andriyani Asra. "Pemanfaatan Teknik SCAMPER dalam Meningkatkan HOTS (High Order of Thinking Skills) pada Mata Kuliah Pengembangan Materi Ajar Bahasa dan Sastra Indonesia Mahasiswa Universitas Muhammadiyah Bulukumba". Jurnal Ilmiah Telaah 6, n.º 1 (20 de enero de 2021): 11. http://dx.doi.org/10.31764/telaah.v6i1.3350.
Texto completoChe, Songbek, Takuro Shinada, Tomoyasu Mizuno, Yoshihiro Ishitani y Akihiko Yoshikawa. "Polarity dependence of In-rich InGaN and InN/InGaN MQWs". MRS Proceedings 892 (2005). http://dx.doi.org/10.1557/proc-0892-ff06-03.
Texto completoYeo, Y. C., T. C. Chong y M. F. Li. "Valence Band Parameters for Wurtzite GaN and InN". MRS Proceedings 482 (1997). http://dx.doi.org/10.1557/proc-482-923.
Texto completoBinsted, Peter W., Kenneth Scott A. Butcher, Dimiter Alexandrov, Penka Terziyska, Dimka Georgieva, Rositsa Gergova y Vasil Georgiev. "InN on GaN Heterostructure Growth by Migration Enhanced Epitaxial Afterglow (MEAglow)". MRS Proceedings 1396 (2012). http://dx.doi.org/10.1557/opl.2012.15.
Texto completoSingh, R. y T. D. Moustakas. "Growth of InGaN Films by MBE at the Growth Temperature of GaN". MRS Proceedings 395 (1995). http://dx.doi.org/10.1557/proc-395-163.
Texto completoVartuli, C. B., J. W. Lee, J. D. MacKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, R. J. Shul et al. "ICP Dry Etching of III-V Nitrides". MRS Proceedings 468 (1997). http://dx.doi.org/10.1557/proc-468-393.
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