Bibliografías temáticas / GaN Diodes

Literatura académica sobre el tema "GaN Diodes"

Autor: Grafiati
Publicado: 6 de septiembre de 2023

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Artículos de revistas sobre el tema "GaN Diodes"

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RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES". International Journal of High Speed Electronics and Systems 09, n.º 04 (diciembre de 1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.

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We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.
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2

Shashikala, B. N. y B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes". Semiconductor Physics, Quantum Electronics and Optoelectronics 24, n.º 04 (23 de noviembre de 2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.

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This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.
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Shugurov K.Yu., Mozharov A.M., Sapunov G.A., Fedorov V.V., Moiseev E.I., Blokhin S.A., Kuzmenkov A.G. y Mukhin I.S. "Microwave Schottky diodes based on single GaN nanowires". Technical Physics Letters 48, n.º 8 (2022): 18. http://dx.doi.org/10.21883/tpl.2022.08.55053.19229.

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A series of Schottky diodes based on single GaN nanowires has been fabricated. Based on the data of small-signal frequency analysis (parameter S21) of diode structures at various bias voltages, the parameters of the corresponding equivalent electrical circuit were determined. It is shown that the cutoff frequency of the fabricated diodes reaches 27.5 GHz. Keywords: GaN, nanowires, microwave band, Schottky diode.
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Polyntsev, Egor, Evgeny Erofeev y Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications". Electronics 10, n.º 22 (15 de noviembre de 2021): 2802. http://dx.doi.org/10.3390/electronics10222802.

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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.
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Matys, Maciej, Kazuki Kitagawa, Tetsuo Narita, Tsutomu Uesugi, Jun Suda y Tetsu Kachi. "Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage". Applied Physics Letters 121, n.º 20 (14 de noviembre de 2022): 203507. http://dx.doi.org/10.1063/5.0106321.

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Vertical GaN junction barrier Schottky (JBS) diodes with superior electrical characteristics and nondestructive breakdown were realized using selective-area p-type doping via Mg ion implantation and subsequent ultra-high-pressure annealing. Mg-ion implantation was performed into a 10 μm thick Si-doped GaN drift layer grown on a free-standing n-type GaN substrate. We fabricated the JBS diodes with different n-type GaN channel widths Ln = 1 and 1.5 μm. The JBS diodes, depending on Ln, exhibited on-resistance ( RON) between 0.57 and 0.67 mΩ cm2, which is a record low value for vertical GaN Schottky barrier diodes (SBDs) and high breakdown (BV) between 660 and 675 V (84.4% of the ideal parallel plane BV). The obtained low RON of JBS diodes can be well explained in terms of the RON model, which includes n-type GaN channel resistance, spreading current effect, and substrate resistance. The reverse leakage current in JBS diodes was relatively low 103–104 times lower than in GaN SBDs. In addition, the JBS diode with lower Ln exhibited the leakage current significantly smaller (up to reverse bias 300 V) than in the JBS diode with large Ln, which was explained in terms of the reduced electric field near the Schottky interface. Furthermore, the JBS diodes showed a very high current density of 5.5 kA/cm2, a low turn-on voltage of 0.74 V, and no destruction against the rapid increase in the reverse current approximately by two orders of magnitude. This work demonstrated that GaN JBS diodes can be strong candidates for low loss power switching applications.
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Шугуров, К. Ю., А. М. Можаров, Г. А. Сапунов, В. В. Фёдоров, Э. И. Моисеев, С. А. Блохин, А. Г. Кузьменков y И. С. Мухин. "Сверхвысокочастотные диоды Шоттки на основе одиночных нитевидных нанокристаллов GaN". Письма в журнал технической физики 48, n.º 15 (2022): 22. http://dx.doi.org/10.21883/pjtf.2022.15.53127.19229.

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A series of Schottky diodes based on single GaN nanowires has been fabricated. Based on the data of small-signal frequency analysis (parameter S21) of diode structures at various bias voltages, the parameters of the corresponding equivalent electrical circuit were determined. It is shown that the cutoff frequency of the fabricated diodes reaches 27.5 GHz.
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Nomoto, Kazuki, Tohru Nakamura, Naoki Kaneda, Toshihiro Kawano, Tadayoshi Tsuchiya y Tomoyoshi Mishima. "Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage". Materials Science Forum 717-720 (mayo de 2012): 1299–302. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1299.

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This report describes the first to fabricate GaN p-n junction diodes on free-standing GaN substrates with a 3mm diameter. For the diode of 3 mm in diameter, the specific on-resistance and the breakdown voltage were 124 mΩ•cm2 (at 4.0 V) and -450 V, respectively. Consequently, combination of our material and device processing revealed a record fabricated device size with a high breakdown voltage and low forward leakage current in GaN vertical diodes.
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Lee, Wen Zhao, Duu Sheng Ong, Kan Yeep Choo, Oktay Yilmazoglu y Hans L. Hartnagel. "Monte Carlo evaluation of GaN THz Gunn diodes". Semiconductor Science and Technology 36, n.º 12 (4 de noviembre de 2021): 125009. http://dx.doi.org/10.1088/1361-6641/ac2b4d.

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Abstract The performances of GaN-based Gunn diodes have been studied extensively for more than two decades, however, the diverging electron drift velocity characteristics employed in these studies merit a review of the potential of GaN Gunn diodes as THz sources. A self-consistent analytical-band Monte Carlo (MC) model capable of reproducing the electron drift velocity characteristics of GaN predicted theoretically by the first-principles full band MC model is used in this work to evaluate systematically the performance of GaN Gunn diodes in transit time mode. The optimal fundamental frequency of a sustainable current oscillation under a DC bias is determined as a function of the length of its transit region. The MC model predicts a GaN Gunn diode with a transit length of 500 nm capable of operating at frequencies up to 625 GHz with an estimated output power of 3.0 W. An MC model takes into account the effect of defects in order to replicate the much lower electron drift velocity characteristics derived from experimental work and predicts THz signal generation of 2.5 W at highest sustainable operating frequency of 326 GHz in a Gunn diode with a transit length of 700 nm.
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N’Dohi, Atse Julien Eric, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier et al. "Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode". Crystals 13, n.º 5 (22 de abril de 2023): 713. http://dx.doi.org/10.3390/cryst13050713.

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In this work, the physical and the electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current-voltage (I-V) measurements were performed to better understand the effects of physical parameters, for example structural defects and doping level inhomogeneity, on the diode electrical performances. Evidence of dislocations in the diode epilayer was spotted thanks to the CL measurements. Then, using 2D mappings of the E2h and A1 (LO) Raman modes, dislocations and other peculiar structural defects were observed. The I-V measurements of the diodes revealed a significant increase in the leakage current with applied reverse bias up to 200 V. The combination of physical and electrical characterization methods indicated that the electrical leakage in the reverse biased diodes seems more correlated with short range non-uniformities of the effective doping than with strain fluctuation induced by dislocations.
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Vostokov N. V., Drozdov M. N., Kraev S. A., Khrykin O. I. y Yunin P. A. "Effect of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes". Semiconductors 56, n.º 7 (2022): 455. http://dx.doi.org/10.21883/sc.2022.07.54641.04.

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The influence of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes with near-surface polarization-induced delta-doping has been studied. It is shown that annealing provides additional possibilities for controlling the effective barrier height of diodes, improving and fine-tuning their transport characteristics. Thermal annealing can be used to fabricate low-barrier diodes designed to operate at high temperatures. Keywords: low-barrier diode, GaN, transport properties, thermal annealing.
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Tesis sobre el tema "GaN Diodes"

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Li, Zonglin y 李宗林. "Reliability study of InGaN/GaN light-emitting diode". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43224155.

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Li, Zonglin. "Reliability study of InGaN/GaN light-emitting diode". Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43224155.

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Sharma, Nikhil. "Characterisation of InGaN/GaN light emitting diodes". Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621315.

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Wang, Ke y 王科. "Some experimental studies of n-type GaN and Au/GaN contacts". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B26663612.

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Bavencove, Anne-Laure. "Réalisation de diodes électroluminescentes à base de nanofils GaN". Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENY037/document.

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Ces travaux de thèse portent sur l'évaluation des propriétés de nanofils InGaN/GaN en vue de la réalisation de diodes électroluminescentes (LEDs). Deux types d'architecture, obtenus par des techniques de croissance différentes, ont été étudiés. La technique MBE a conduit à la réalisation de LEDs en structure axiale émettant du domaine spectral bleu au rouge. Les émetteurs uniques présentent dans ce cas des diamètres typiquement inférieurs à 100 nm. La technique MOCVD a conduit quant à elle la fabrication de LEDs émettant des longueurs d'onde plus courtes à partir d'hétérostructures InGaN/GaN en Coeur/Coquille présentant des dimensions micrométriques. Dans les deux cas, la croissance est réalisée de manière spontanée sur un substrat Silicium (111) de conductivité élevée permettant l'injection verticale du courant dans les dispositifs intégrés à l'échelle macroscopique. L'ensemble des briques technologiques nécessaires à la fabrication de LEDs a été évalué par un panel important de techniques expérimentales adaptées aux structures à fort rapport de forme. Ainsi, l'effet de l'incorporation d'espèces dopantes de type n (Silicium) et de type p (Magnésium) a été caractérisé par des expériences de spectroscopie optique couplées à des mesures électriques sur fils uniques. De plus, la cathodoluminescence basse température a été largement utilisée afin d'étudier les propriétés optiques de la zone active à base d'InGaN dans les deux architectures considérées. Après intégration technologique, des caractérisations électro-optiques résolues à l'échelle du fil unique ont montré que les performances des LEDs à nanofils restent principalement limitées par la fluctuation des propriétés électriques et optiques entre émetteurs uniques
This thesis aims at studying the intrinsic properties of InGaN/GaN nanowires (NWs) in order to fabricate efficient light emitting diodes (LEDs). Two active region designs, obtained through different growth techniques, have been extensively investigated. Axial NW-based LEDs emitting from the blue to the red spectral range have been grown by MBE. In this case, single emitters present diameters typically smaller than 100 nm. MOCVD allowed the fabrication of LEDs emitting shorter wavelengths from Core/Shell heterostructures with typical dimensions in the micrometre range. In both cases, the spontaneous growth has been conducted on Silicon (111) highly conductive substrates in order to inject the current vertically into macroscopically contacted devices. Technological building blocks needed to fabricate LEDs have been investigated using a wide range of characterization techniques adapted for high aspect ratio structures. Thus, n-type (Silicon) and p-type (Magnesium) dopings have been assessed thanks to optical spectroscopy techniques, and these results have been confirmed by electrical measurements carried out on single wires. Furthermore, low temperature cathodoluminescence has been widely used to study the optical properties of InGaN-based active regions. After technological integration, electro-optical characterizations with spatial resolution down to the single wire level have revealed that device performances are mainly limited by the fluctuation of electrical and optical properties between single emitters
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Xu, Hui Park Minseo. "Fabrication and electrical/optical characterization of bulk GaN-based Schottky diodes". Auburn, Ala, 2009. http://hdl.handle.net/10415/1871.

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Feng, Jian. "Power improvement of the InGaN/GaN LED /". View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20FENG.

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Pope, Iestyn A. "Characerisation of Ingan gan quantum well light emitting diodes". Thesis, Cardiff University, 2004. http://orca.cf.ac.uk/55927/.

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By focussing on the properties of InGaN/GaN quantum well (QW) LEDs the key physical processes relevant to all InGaN/GaN light emitters are studied. These include the strength of the piezoelectric field, the important current pathways and the effect doping densities and anneal temperatures have on device performance. Photocurrent absorption spectra, of 35A Ino.1Gao.9N QW LEDs, were measured for a range of reverse bias. A bias of 8.5 V was necessary to counteract the affect of the internal piezoelectric field. Using this value and an appropriate approximation for the depletion width of a p-z'-n junction the calculated piezoelectric field was (1.9 0.15) MVcm"1, in good agreement with 1.8 MVcm"1 calculated using piezoelectric constants interpolated from the binaries. The absorption spectra of 26A wide Ino.i6Gao.84N QW LEDs exhibit a band tail extending to low photon energies whereas emission occurs from the low energy side of this band tail, suggesting emission occurs from localised potential minima. Light-current (LI) characteristics, measured as a function of temperature, are sublinear and exhibit a distinctive temperature dependence. These characteristics are explained in terms of drift leakage which is exacerbated due to the large acceptor activation energy in Mg doped GaN. The data was simulated using a drift diffusion model and good agreement between experimental and simulated results is obtained providing the model includes the band tailing. Emission and absorption spectra and LI characteristics were measured for 25A Ino.1Gao.9N/GaN QW LEDs subject to four different anneal temperatures of 700, 750, 850 and 900°C. Using a drift diffusion model, incorporating different acceptor concentrations to simulate the effect of different anneal temperatures, good agreement was achieved between the trends seen in the experimental results and those produced by the simulations. This confirms the important roles drift leakage and thermal annealing have on these devices.
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Wang, Xianghua y 王向华. "Design and laser fabrication of GaN/sapphire light-emitting diodes". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B45143079.

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Watson, Scott. "High speed systems using GaN visible LEDs and laser diodes". Thesis, University of Glasgow, 2016. http://theses.gla.ac.uk/7205/.

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Visible light communication is a developing technology making use of light-emitting diodes (LEDs) and laser diodes in the visible spectrum for communication purposes. This thesis looks at the use of gallium nitride (GaN) devices for high speed measurements in free space, through fibre and underwater. Micro-pixellated LEDs (micro-LEDs) have been used as a source for these measurements and the different ways to drive these devices is explored. LEDs are limited in how fast they can be driven and therefore laser diodes are also considered for these high speed measurements. The frequency responses of such devices are measured and data transmission experiments are conducted. However, these devices can be used for more than just free-space communication. Laser diodes are much more powerful than their LED counterparts and can be modulated much faster making them ideal for fibre communications and underwater communications, where eye-safety is not an issue. By using these devices, a study of step-index plastic optical fibre (SI-POF) and multi-core fibre is carried out, analysing their dispersion properties and transmission characteristics. Further high speed measurements were conducted under the water as the need to communicate with unmanned vehicles under the ocean continues to be an important issue. Many security and defence companies and oil and gas industries are interested in this technology for that purpose, as the current setup is complex, expensive and limited in bandwidth. High modulation bandwidths and high data transmission rates are achieved, with some of the leading results in the field presented here. These results highlight the importance of the topic of visible light communication and show the attractiveness of using these visible GaN devices for this purpose.
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Libros sobre el tema "GaN Diodes"

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Scheibenzuber, Wolfgang G. GaN-Based Laser Diodes. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1.

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Nakamura, Shuji. The blue laser diode: GaN based light emitters and lasers. Berlin: Springer, 1997.

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service), SpringerLink (Online, ed. GaN-Based Laser Diodes: Towards Longer Wavelengths and Short Pulses. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.

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F, Neumark Gertrude, Kuskovsky Igor L y Jiang H. X, eds. Wide bandgap light emitting materials and devices. Weinheim: Wiley-VCH, 2007.

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Zhong hua min guo guang dian xue hui, ed. LED gong cheng shi ji chu gai nian yu ying yong: Fundamental and applications of LED engineers. Taibei Shi: Wu nan tu shu chu ban gong si, 2012.

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Szweda, Roy. Gallium nitride & related wide bandgap materials & devices: A market & technology overview 1996-2001. Oxford, UK: Elsevier Advanced Technology, 1997.

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Yu, Chen Liang y United States. National Aeronautics and Space Administration., eds. SiC-based gas sensors. [Washington, D.C: National Aeronautics and Space Administration, 1997.

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1949-, Gurevich Sergei A., Rosanov Nikolay N, Institut lazernoĭ fiziki SO RAN. y Society of Photo-optical Instrumentation Engineers., eds. Laser Optics 2003: Diode lasers and telecommunication systems : 30 June -4 July 2003, St. Petersburg, Russia. Bellingham, Wash., USA: SPIE, 2004.

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B, Danilov Oleg, Institut lazernoĭ fiziki SO RAN. y Society of Photo-optical Instrumentation Engineers., eds. Laser Optics 2003: High-power gas lasers : 30 June-4 July 2003, St. Petersburg, Russia. Bellingham, Wash., USA: SPIE, 2004.

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Yu, Chen Liang y United States. National Aeronautics and Space Administration., eds. Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors. [Washington, DC]: National Aeronautics and Space Administration, 1996.

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Capítulos de libros sobre el tema "GaN Diodes"

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Jiang, Fengyi, Jianli Zhang, Qian Sun y Zhijue Quan. "GaN LEDs on Si Substrate". En Light-Emitting Diodes, 133–70. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_4.

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Einfeldt, S., S. Figge, T. BÖttcher y D. Hommel. "GaN-Based Laser Diodes". En UV Solid-State Light Emitters and Detectors, 31–39. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_3.

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Xu, Ke, Miao Wang, Taofei Zhou y Jianfeng Wang. "Homoepitaxy of GaN Light-Emitting Diodes". En Light-Emitting Diodes, 93–132. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_3.

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Scheibenzuber, Wolfgang G. "Short-Pulse Laser Diodes". En GaN-Based Laser Diodes, 67–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_7.

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Scheibenzuber, Wolfgang G. "Introduction". En GaN-Based Laser Diodes, 1–4. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_1.

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Scheibenzuber, Wolfgang G. "Basic Concepts". En GaN-Based Laser Diodes, 5–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_2.

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Scheibenzuber, Wolfgang G. "Thermal Properties". En GaN-Based Laser Diodes, 21–28. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_3.

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Scheibenzuber, Wolfgang G. "Light Propagation and Amplification in Laser Diodes from Violet to Green". En GaN-Based Laser Diodes, 29–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_4.

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Scheibenzuber, Wolfgang G. "Semipolar Crystal Orientations for Green Laser Diodes". En GaN-Based Laser Diodes, 37–54. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_5.

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Scheibenzuber, Wolfgang G. "Dynamics of Charge Carriers and Photons". En GaN-Based Laser Diodes, 55–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_6.

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Actas de conferencias sobre el tema "GaN Diodes"

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Chaney, Alexander, Meng Qi, S. M. Islam, Huili Grace Xing y Debdeep Jena. "GaN tunnel switch diodes". En 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548409.

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Kizilyalli, Isik C., Andrew Edwards, David Bour, Hemal Shah, Don Disney y Hui Nie. "Very high performance GaN-on-GaN diodes". En 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA). IEEE, 2013. http://dx.doi.org/10.1109/wipda.2013.6695550.

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Nagahama, Shinichi, Naruhito Iwasa, Masayuki Senoh, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Tokuya Kozaki et al. "GaN-based violet laser diodes". En Symposium on Integrated Optics, editado por Luke J. Mawst y Ramon U. Martinelli. SPIE, 2001. http://dx.doi.org/10.1117/12.429804.

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Pavlidis, Georges, James Dallas, Sukwon Choi, Shyh-Chiang Shen y Samuel Graham. "Steady State and Transient Thermal Characterization of Vertical GaN PIN Diodes". En ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74149.

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In this work, we investigate the thermal response of GaN PIN diodes grown on a sapphire substrate and compare the results to GaN PIN diodes grown on a free standing GaN substrate (FS-GaN). Until now, thermal characterization techniques have been developed to assess the temperature distribution across lateral devices. Raman thermometry has shown to accurately measure the temperature rise across the depth of the GaN layer. Implementing this technique to assess the temperature distribution across the depth of a vertical GaN device is more challenging since a volumetric depth average is measured. The use of TiO2 nanoparticles is shown to overcome this issue and reduce the uncertainty in the peak temperature by probing a surface temperature on top of the device. For the sapphire substrate, an additional temperature rise of about 15 K was seen on the surface of the PIN diode as compared to the average in the bulk. While the steady state thermal measurements show an accurate estimation of the device’s peak temperature, the PIN diodes are normally operated under pulsed conditions and the thermal response of these devices under periodic joule heating must be assessed. A recently developed transient thermoreflectance imaging technique (TTI) is used in this study to monitor transient temperature rise and decay of top metal contact. Under the same biasing conditions, the FS-GaN PIN diode is found to result in less than half the temperature rise obtained by the sapphire substrate diode. Extracting time constants, a longer rise and decay is also observed in the sapphire substrate diode.
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Evans, Keith. "Development of GaN Substrates for GaN Based Laser Diodes". En Photonic Applications Systems Technologies Conference. Washington, D.C.: OSA, 2007. http://dx.doi.org/10.1364/phast.2007.pwb2.

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Kuball, M., Y. K. Song, A. V. Nurmikko, G. E. Bulman, K. Doverspike, S. T. Sheppard, T. W. Weeks et al. "Gain Spectroscopy on InGaN/GaN Quantum Well Laser Diodes". En The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.ctug6.

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In spite of advances that have led to the demonstration of a 1000 hour cw blue InGaN QW diode laser, as well of the demonstration of cw operation on a SiC substrate [1], major unanswered questions exist about the physics of optical gain in this disordered QW system, given the large departure of InGaN from a random alloy in terms of microscopic scale In-compositional fluctuations. We have reported on gain spectra obtained on InGaN/GaN pn-junction heterostructures [2]. Useful information has been acquired but spectroscopic details were incomplete.
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Perlin, P., T. Suski, L. Morona, S. Stanczyk, M. Leszczynski, P. Wisniewski, R. Czernecki, Stephen Najda y D. Schiavon. "GaN laser diodes for quantum technologies". En Quantum Technologies and Quantum Information Science, editado por Mark T. Gruneisen, Miloslav Dusek y John G. Rarity. SPIE, 2017. http://dx.doi.org/10.1117/12.2277001.

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Erofeev, Evgeny V. y Ivan V. Fedin. "Fast switching GaN Schottky barrier diodes". En 2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM). IEEE, 2016. http://dx.doi.org/10.1109/edm.2016.7538688.

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Najda, Stephen P., Piotr Perlin, Tadek Suski, Szymon Stanczyk, Mike Leszczynski, Dario Schiavon, Thomas Slight et al. "GaN laser diodes for quantum sensing". En SPIE Future Sensing Technologies, editado por Christopher R. Valenta, Joseph A. Shaw y Masafumi Kimata. SPIE, 2020. http://dx.doi.org/10.1117/12.2574595.

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Disney, Don, Hui Nie, Andrew Edwards, David Bour, Hemal Shah y Isik C. Kizilyalli. "Vertical power diodes in bulk GaN". En 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, 2013. http://dx.doi.org/10.1109/ispsd.2013.6694455.

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Informes sobre el tema "GaN Diodes"

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Ren, F., C. R. Abernathy y J. D. MacKenzie. Dielectrics for GaN based MIS-diodes. Office of Scientific and Technical Information (OSTI), febrero de 1998. http://dx.doi.org/10.2172/634115.

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Wierer, J. J., Andrew A. Allerman, Jeramy Ray Dickerson, Michael William Moseley, Arthur J. Fischer, B. Bryant, Albert G. Baca, Michael Patrick King, Robert Kaplar y Richard Peter Schneider. Vertical GaN PIN Diodes with 5 kV Avalanche Breakdown. Office of Scientific and Technical Information (OSTI), septiembre de 2015. http://dx.doi.org/10.2172/1221707.

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Armstrong, Andrew y Daniel Feezell. High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control. Office of Scientific and Technical Information (OSTI), abril de 2022. http://dx.doi.org/10.2172/1862286.

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Speck, James. Identification and Mitigation of Droop Mechanism in Gallium Nitride (GaN)-Based Light Emitting Diodes (LEDs) (Final Report). Office of Scientific and Technical Information (OSTI), septiembre de 2018. http://dx.doi.org/10.2172/1514275.

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Chakraborty, Arpan, Aurelien David, Michael Grundmann, Anurag Tyagi, Michael Craven, Christophe Hurni y Michael Cich. U.S. Department of Energy, National Energy Technology Laboratory Solid-State Lighting Core Technologies Light Emitting Diodes on Semipolar Bulk GaN Substrate with IQE > 80% at 150 A/cm2 and 100 0C. Office of Scientific and Technical Information (OSTI), marzo de 2015. http://dx.doi.org/10.2172/1301906.

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Sun, Steve y Chuni Ghosh. Medical Gas Diagnosis Via Diode Laser Absorption Spectroscopy. Fort Belvoir, VA: Defense Technical Information Center, abril de 1995. http://dx.doi.org/10.21236/ada299343.

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Benner, Robert E., Lee M. Smith, Ming-Wei Pan, Carl W. Johnson y Daniel D. Knowlton. Diode Laser Raman Scattering Prototype Gas-Phase Environmental Monitoring. Fort Belvoir, VA: Defense Technical Information Center, julio de 1999. http://dx.doi.org/10.21236/ada379586.

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Heflinger, D. G., M. B. Chang y W. R. Fenner. High-Order Mode Dependencies in Gain-Guided Twin-Stripe Laser Diode Arrays. Fort Belvoir, VA: Defense Technical Information Center, febrero de 1990. http://dx.doi.org/10.21236/ada220868.

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Heflinger, Donald G. y Wayne R. Fenner. Spectrally Resolved Near-Field Intensity Measurements from Gain-Guided Twin-Stripe Laser Diode Arrays. Fort Belvoir, VA: Defense Technical Information Center, noviembre de 1988. http://dx.doi.org/10.21236/ada201641.

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Camparo, James C. y Robert P. Frueholz. Exploration of the Potential Performance of Diode Laser-Pumped Gas Cell Atomic Frequency Standards. Fort Belvoir, VA: Defense Technical Information Center, septiembre de 1986. http://dx.doi.org/10.21236/ada175431.

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