Artículos de revistas sobre el tema "Ga2O3 epitaxial growth and optoelectronic devices"
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Nelson, Erik C., Neville L. Dias, Kevin P. Bassett, Simon N. Dunham, Varun Verma, Masao Miyake, Pierre Wiltzius et al. "Epitaxial growth of three-dimensionally architectured optoelectronic devices". Nature Materials 10, n.º 9 (24 de julio de 2011): 676–81. http://dx.doi.org/10.1038/nmat3071.
Texto completoAn, Yuxin, Liyan Dai, Ying Wu, Biao Wu, Yanfei Zhao, Tong Liu, Hui Hao et al. "Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition". Journal of Advanced Dielectrics 09, n.º 04 (agosto de 2019): 1950032. http://dx.doi.org/10.1142/s2010135x19500322.
Texto completoLu, Chao, Lei Gao, Fanqi Meng, Qinghua Zhang, Lihong Yang, Zeng Liu, Mingtong Zhu et al. "Epitaxial growth of a β-Ga2O3 (−201)-oriented thin film on a threefold symmetrical SrTiO3 (111) substrate for heterogeneous integration". Journal of Applied Physics 133, n.º 4 (28 de enero de 2023): 045306. http://dx.doi.org/10.1063/5.0112175.
Texto completoGogova, Daniela, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson et al. "Epitaxial growth of β-Ga2O3 by hot-wall MOCVD". AIP Advances 12, n.º 5 (1 de mayo de 2022): 055022. http://dx.doi.org/10.1063/5.0087571.
Texto completoGuzilova, L. I., A. S. Grashchenko y V. I. Nikolaev. "THE STUDY OF MECHANICAL DEFORMATION RESISTANCE OF α-Ga2O3 EPITAXIAL LAYERS USING THE NANOINDENTATION TECHNIQUE". Frontier materials & technologies, n.º 4 (2021): 7–16. http://dx.doi.org/10.18323/2782-4039-2021-4-7-16.
Texto completoVescan, L., T. Stoica, M. Goryll y K. Grimm. "Selective epitaxial growth of strained SiGe/Si for optoelectronic devices". Materials Science and Engineering: B 51, n.º 1-3 (febrero de 1998): 166–69. http://dx.doi.org/10.1016/s0921-5107(97)00253-5.
Texto completoZhao, Mei, Manman Liu, Youqing Dong, Chao Zou, Keqin Yang, Yun Yang, Lijie Zhang y Shaoming Huang. "Epitaxial growth of two-dimensional SnSe2/MoS2 misfit heterostructures". Journal of Materials Chemistry C 4, n.º 43 (2016): 10215–22. http://dx.doi.org/10.1039/c6tc03406c.
Texto completoTak, Bhera Ram, Ming-Min Yang, Marin Alexe y Rajendra Singh. "Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films". Crystals 11, n.º 9 (30 de agosto de 2021): 1046. http://dx.doi.org/10.3390/cryst11091046.
Texto completoHasan, Md Nazmul, Edward Swinnich y Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics". International Journal of High Speed Electronics and Systems 28, n.º 01n02 (marzo de 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.
Texto completoSkipper, Alec M., Priyanka Petluru, Daniel J. Ironside, Ashlee M. García, Aaron J. Muhowski, Daniel Wasserman y Seth R. Bank. "All-epitaxial, laterally structured plasmonic materials". Applied Physics Letters 120, n.º 16 (18 de abril de 2022): 161103. http://dx.doi.org/10.1063/5.0094677.
Texto completoWang, Chao, David Barba, Haiguang Zhao, Xin Tong, Zhiming Wang y Federico Rosei. "Epitaxial growth and defect repair of heterostructured CuInSexS2−x/CdSeS/CdS quantum dots". Nanoscale 11, n.º 41 (2019): 19529–35. http://dx.doi.org/10.1039/c9nr06110j.
Texto completoKim, Kyoung-Ho, Minh-Tan Ha, Heesoo Lee, Minho Kim, Okhyun Nam, Yun-Ji Shin, Seong-Min Jeong y Si-Young Bae. "Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition". Materials 15, n.º 3 (29 de enero de 2022): 1050. http://dx.doi.org/10.3390/ma15031050.
Texto completoTang, Wenbo, Yongjian Ma, Xiaodong Zhang, Xin Zhou, Li Zhang, Xuan Zhang, Tiwei Chen et al. "High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant". Applied Physics Letters 120, n.º 21 (23 de mayo de 2022): 212103. http://dx.doi.org/10.1063/5.0092754.
Texto completoYadav, Asha, Bo Fu, Stephanie Nicole Bonvicini, Linh Quy Ly, Zhitai Jia y Yujun Shi. "β-Ga2O3 Nanostructures: Chemical Vapor Deposition Growth Using Thermally Dewetted Au Nanoparticles as Catalyst and Characterization". Nanomaterials 12, n.º 15 (28 de julio de 2022): 2589. http://dx.doi.org/10.3390/nano12152589.
Texto completoWang, Xiaojie, Wenxiang Mu, Jiahui Xie, Jinteng Zhang, Yang Li, Zhitai Jia y Xutang Tao. "Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method". Journal of Semiconductors 44, n.º 6 (1 de junio de 2023): 062803. http://dx.doi.org/10.1088/1674-4926/44/6/062803.
Texto completoChuai, Ya-Hui, Hong-Zhi Shen, Ya-Dan Li, Bing Hu, Yu Zhang, Chuan-Tao Zheng y Yi-Ding Wang. "Epitaxial growth of highly infrared-transparent and conductive CuScO2 thin film by polymer-assisted-deposition method". RSC Advances 5, n.º 61 (2015): 49301–7. http://dx.doi.org/10.1039/c5ra07743e.
Texto completoSun, Yuan Yuan, Xi He Zhang, Qiu Rui Jia, Zheng Li y Shi Bo Liu. "Research on the Preparation Technology of GaN Ultraviolet Photoelectric Detector". Advanced Materials Research 717 (julio de 2013): 205–9. http://dx.doi.org/10.4028/www.scientific.net/amr.717.205.
Texto completoCheng, Lu, Yanlin Wu, Wenbin Zhong, Duanyang Chen, Hongji Qi y Wei Zheng. "Photophysics of β-Ga2O3: Phonon polaritons, exciton polaritons, free-carrier absorption, and band-edge absorption". Journal of Applied Physics 132, n.º 18 (14 de noviembre de 2022): 185704. http://dx.doi.org/10.1063/5.0118843.
Texto completoBui, Quang Chieu, Ludovic Largeau, Martina Morassi, Nikoletta Jegenyes, Olivia Mauguin, Laurent Travers, Xavier Lafosse et al. "GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors". Applied Sciences 9, n.º 17 (28 de agosto de 2019): 3528. http://dx.doi.org/10.3390/app9173528.
Texto completoMurakami, Masanori, Yasuo Koide, Miki Moriyama y Susumu Tsukimoto. "Development of Electrode Materials for Semiconductor Devices". Materials Science Forum 475-479 (enero de 2005): 1705–14. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1705.
Texto completoCirlin, G. E., R. R. Reznik, I. V. Shtrom, A. I. Khrebtov, Yu B. Samsonenko, S. A. Kukushkin, T. Kasama y N. Akopian. "Hybrid GaAs/AlGaAs nanowire --- quantum dot system for single photon sources". Физика и техника полупроводников 52, n.º 4 (2018): 469. http://dx.doi.org/10.21883/ftp.2018.04.45818.07.
Texto completoBatstone, J. L. "Structural and electronic properties of defects in semiconductors". Proceedings, annual meeting, Electron Microscopy Society of America 53 (13 de agosto de 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.
Texto completoFu, Wai Yuen y Hoi Wai Choi. "Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes". Journal of Applied Physics 132, n.º 6 (14 de agosto de 2022): 060903. http://dx.doi.org/10.1063/5.0089750.
Texto completoKang, T. W., S. H. Park y T. W. Kim. "Improvement of the crystallinity of GaN epitaxial layers grown on porous Si (100) layers by using a two-step method". Journal of Materials Research 15, n.º 12 (diciembre de 2000): 2602–5. http://dx.doi.org/10.1557/jmr.2000.0373.
Texto completoSpencer, Joseph A., Marko J. Tadjer, Alan G. Jacobs, Michael A. Mastro, John L. Lyons, Jaime A. Freitas, James C. Gallagher et al. "Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility". Applied Physics Letters 121, n.º 19 (7 de noviembre de 2022): 192102. http://dx.doi.org/10.1063/5.0120494.
Texto completoChang, P. C., C. L. Yu, Y. W. Jahn, S. J. Chang y K. H. Lee. "Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films". Advanced Materials Research 287-290 (julio de 2011): 1456–59. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.1456.
Texto completoPark, Minseong, Byungjoon Bae, Taegeon Kim, Hyun S. Kum y Kyusang Lee. "2D materials-assisted heterogeneous integration of semiconductor membranes toward functional devices". Journal of Applied Physics 132, n.º 19 (21 de noviembre de 2022): 190902. http://dx.doi.org/10.1063/5.0122768.
Texto completoFu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications". ECS Meeting Abstracts MA2022-02, n.º 34 (9 de octubre de 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.
Texto completoLeung, Benjamin, Jie Song, Yu Zhang, Miao-Chan Tsai, Ge Yuan y Jung Han. "Using the Evolutionary Selection Principle in Selective Area Growth to Achieve Single-Crystalline GaN on SiO2". International Journal of High Speed Electronics and Systems 23, n.º 01n02 (marzo de 2014): 1450003. http://dx.doi.org/10.1142/s0129156414500037.
Texto completoVescan, L. "Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, n.º 3 (mayo de 1998): 1549. http://dx.doi.org/10.1116/1.589937.
Texto completoKryzhanovskaya, Natalia V., Fedor I. Zubov, Eduard I. Moiseev, Anna S. Dragunova, Konstantin A. Ivanov, Mikhail V. Maximov, Nikolay A. Kaluzhnyy et al. "On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board". Laser Physics Letters 19, n.º 1 (29 de noviembre de 2021): 016201. http://dx.doi.org/10.1088/1612-202x/ac3a0f.
Texto completoWang, Yifan, Xuanze Li, Pei Liu, Jing Xia y Xiangmin Meng. "Epitaxial growth of CsPbBr3/PbS single-crystal film heterostructures for photodetection". Journal of Semiconductors 42, n.º 11 (1 de noviembre de 2021): 112001. http://dx.doi.org/10.1088/1674-4926/42/11/112001.
Texto completoWang, Liu, Wenrui Zhang, Ningtao Liu, Tan Zhang, Zilong Wang, Simiao Wu, Zhaolin Zhan y Jichun Ye. "Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa2O4 Films by Pulsed Laser Deposition". Coatings 11, n.º 7 (30 de junio de 2021): 782. http://dx.doi.org/10.3390/coatings11070782.
Texto completoTriplett, Mark, M. Saif Islam y Dong Yu. "Scanning Photocurrent Microscopy of as-Grown Silicon Nanowire Metallurgical Junctions". MRS Proceedings 1551 (2013): 29–33. http://dx.doi.org/10.1557/opl.2013.991.
Texto completoYao, Zhonghui, Cheng Jiang, Xu Wang, Hongmei Chen, Hongpei Wang, Liang Qin y Ziyang Zhang. "Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers". Nanomaterials 12, n.º 7 (24 de marzo de 2022): 1058. http://dx.doi.org/10.3390/nano12071058.
Texto completoBhattacharyya, Arkka, Carl Peterson, Takeki Itoh, Saurav Roy, Jacqueline Cooke, Steve Rebollo, Praneeth Ranga, Berardi Sensale-Rodriguez y Sriram Krishnamoorthy. "Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers". APL Materials 11, n.º 2 (1 de febrero de 2023): 021110. http://dx.doi.org/10.1063/5.0137666.
Texto completoIkenoue, Takumi, Satoshi Yoneya, Masao Miyake y Tetsuji Hirato. "Epitaxial Growth and Bandgap Control of Ni1-xMgxO Thin Film Grown by Mist Chemical Vapor Deposition Method". MRS Advances 5, n.º 31-32 (2020): 1705–12. http://dx.doi.org/10.1557/adv.2020.219.
Texto completoMachtay, N. D. y R. V. Kukta. "Energetics of Epitaxial Island Arrangements on Substrate Mesas". Journal of Applied Mechanics 73, n.º 2 (14 de mayo de 2005): 212–19. http://dx.doi.org/10.1115/1.2073327.
Texto completoVashishtha, Pargam, Pukhraj Prajapat, Lalit Goswami, Aditya Yadav, Akhilesh Pandey y Govind Gupta. "Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector". Electronic Materials 3, n.º 4 (9 de diciembre de 2022): 357–67. http://dx.doi.org/10.3390/electronicmat3040029.
Texto completoAssali, S., S. Koelling, Z. Abboud, J. Nicolas, A. Attiaoui y O. Moutanabbir. "500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon". Journal of Applied Physics 132, n.º 17 (7 de noviembre de 2022): 175304. http://dx.doi.org/10.1063/5.0119624.
Texto completoBrown, J. M., S. J. Pearton, R. Caruso, M. Stavola, K. T. Short, D. L. Malm, S. M. Vernon y W. S. Hobson. "Transmission electron microscopy of epitaxial gallium arsenide grown on a variety of silicon substrates by metallorganic chemical vapor deposition". Proceedings, annual meeting, Electron Microscopy Society of America 45 (agosto de 1987): 342–43. http://dx.doi.org/10.1017/s0424820100126500.
Texto completoYang, Duyoung, Byungsoo Kim, Tae Hoon Eom, Yongjo Park y Ho Won Jang. "Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective". Electronic Materials Letters 18, n.º 2 (6 de enero de 2022): 113–28. http://dx.doi.org/10.1007/s13391-021-00333-5.
Texto completoXue, Xiaohuan, Jianjun Song y Rongxi Xuan. "Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process". Advances in Condensed Matter Physics 2019 (16 de septiembre de 2019): 1–9. http://dx.doi.org/10.1155/2019/2096854.
Texto completoShea, B., Q. Sun-Paduano, D. F. Bliss, M. C. Callahan y C. Sung. "Characterization of Gan/Sapphire Interface and the Buffer Layer by TEM/AFM". Microscopy and Microanalysis 7, S2 (agosto de 2001): 330–31. http://dx.doi.org/10.1017/s1431927600027720.
Texto completoNakayama, Yasuo. "(Invited, Digital Presentation) Epitaxial Organic Molecular Interfaces As Well-Ordered Model Systems for Molecular Semiconductor p-n Junctions for Optoelectronic Applications". ECS Meeting Abstracts MA2022-01, n.º 13 (7 de julio de 2022): 907. http://dx.doi.org/10.1149/ma2022-0113907mtgabs.
Texto completoXu, F. J. y B. Shen. "Progress in high crystalline quality AlN grown on sapphire for high-efficiency deep ultraviolet light-emitting diodes". Japanese Journal of Applied Physics 61, n.º 4 (23 de marzo de 2022): 040502. http://dx.doi.org/10.35848/1347-4065/ac3774.
Texto completoYao, Yu, Dandan Sang, Susu Duan, Qinglin Wang y Cailong Liu. "Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction". Molecules 26, n.º 1 (25 de diciembre de 2020): 71. http://dx.doi.org/10.3390/molecules26010071.
Texto completoJohnson, M. A. L., Zhonghai Yu, J. D. Brown, F. A. Koeck, N. A. El-Masry, H. S. Kong, J. A. Edmond, J. W. Cook y J. F. Schetzina. "A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 594–99. http://dx.doi.org/10.1557/s1092578300003100.
Texto completoDietz, Nikolaus y Klaus J. Bachmann. "Real-Time Monitoring of Epitaxial Processes by Parallel-Polarized Reflectance Spectroscopy". MRS Bulletin 20, n.º 5 (mayo de 1995): 49–55. http://dx.doi.org/10.1557/s0883769400044894.
Texto completoErmolaev, Georgy A., Marwa A. El-Sayed, Dmitry I. Yakubovsky, Kirill V. Voronin, Roman I. Romanov, Mikhail K. Tatmyshevskiy, Natalia V. Doroshina et al. "Optical Constants and Structural Properties of Epitaxial MoS2 Monolayers". Nanomaterials 11, n.º 6 (27 de mayo de 2021): 1411. http://dx.doi.org/10.3390/nano11061411.
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