Bibliografías temáticas / Flicker (1/f) Noise

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Literatura académica sobre el tema "Flicker (1/f) Noise"

Autor: Grafiati
Publicado: 4 de junio de 2021
Última modificación: 11 de febrero de 2022

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Artículos de revistas sobre el tema "Flicker (1/f) Noise"

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Klimontovich, Yu L. y J. P. Boon. "Natural Flicker Noise (“1/ f Noise”) in Music". Europhysics Letters (EPL) 3, n.º 4 (15 de febrero de 1987): 395–99. http://dx.doi.org/10.1209/0295-5075/3/4/002.

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Kousik, G. S., J. Gong, C. M. Van Vliet, G. Bosman, W. H. Ellis, E. E. Carroll y P. H. Handel. "Flicker-noise fluctuations in α-radioactive decay". Canadian Journal of Physics 65, n.º 4 (1 de abril de 1987): 365–75. http://dx.doi.org/10.1139/p87-043.

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Counting statistics of α particles from three sources, one containing 241Am; one containing 239Pu, 241Am, and 244Cu; and a source containing 148Gd, were determined over periods of 1–4000 min. In particular, the two-sample variance or Allan variance was determined for many sample runs. According to a recent theorem, there is a unique relation between the particle-flux spectral noise density and the Allan variance. It was found that for small counting periods, the statistics were Poissonian, corresponding to shot noise of the particle flux. For long periods[Formula: see text], the counting statistics were found to be non-Poissonian, indicating the presence of 1/f noise and (or) Lorentzian noise.The 1/f noise gave flicker floors of (0.5–0.7) × 10−7 for 239Pu, (1.0–1.3) × 10−7 for 241Am, and 3.0 × 10−7 for 244Cm. The Lorentzians were not reproducible in different runs and are probably associated with chemical oxidation-reduction rate processes in the source. The 1/f noise is likely inherent in the process of α-particle decay, indicating that the classical picture of alpha decay as a Poisson process is incomplete. Some forms of quantum 1/f noise associated with the tunnel-emission process are briefly discussed.
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Rovamo, J. y A. Raninen. "Modelling of Human Flicker Detection at Various Light Levels". Perception 25, n.º 1_suppl (agosto de 1996): 129. http://dx.doi.org/10.1068/v96l0609.

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Root-mean-square flicker sensitivity was measured within 0.2 – 2500 phot td and 0.5 – 30 Hz for a small spot with an equiluminous surround using computer graphics and a 2AFC method. In temporal noise, flicker sensitivity as a function of temporal frequency had a low-pass shape at all illuminances. Without temporal noise, the flicker sensitivity functions showed a band-pass shape at high illuminances, but changed to a low-pass shape at low illuminances. Our data are well described (goodness of fit 88%) by a model comprising: (i) low-pass temporal filtering by the modulation transfer function (MTF) of the photoreceptors ( R), (ii) high-pass temporal filtering by the MTF of the neural visual pathways ( P) resulting from lateral inhibition, (iii) addition of the temporal equivalent ( Nit) of internal neural noise, and (iv) detection by a temporal matched filter, provided that we take into account the fact that receptor responses become weaker and slower with decreasing illuminance despite adaptation. In our model detection efficiency was \eta( f)=0.148 f−0.568, Nit=46.3 μs and P( f) equal to f, where f is flicker frequency. In addition, R= R0[1+( f/ fc)2]−3, where R0=(1+24.1/ I)−0.5, fc=6.33 I0.172, and I is retinal illuminance. The model indicates that for the detection of a flickering spot in cone vision (i) the strength of lateral inhibition is independent of light level and (ii) quantal noise and dark light always remain insignificant sources of noise. (Mathematical expressions may not appear as intended)
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Cohen, Oded y Zvi Ovadyahu. "1/f NOISE NEAR THE METAL-INSULATOR TRANSITION". International Journal of Modern Physics B 08, n.º 07 (30 de marzo de 1994): 897–903. http://dx.doi.org/10.1142/s0217979294000440.

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The 1/f noise level in polycrystalline indium oxide thin films and of zinc oxide accumulation layers is found to be much higher than that usually observed in metals. A systematic study of the flicker noise properties in these systems reveals a correlation between the 1/f noise magnitude and the proximity of the system to the insulating phase. In fact, the noise appears to increase dramatically close to the Anderson transition but when the average transport properties exhibited by the system are still diffusive. For static disorder that exceeds the critical value characterized by KFl≃1 the system exhibits insulating behavior and the noise level saturates at a rather high, but disorder independent value. The similarity of these findings to the behavior of the magnetic-field-induced Conductance Fluctuations in this system will be pointed out to suggest a common physical origin. This leads to the prediction of high levels of 1/f in all electronic systems that are close to the metal-insulator transition.
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Kaulakys, Bronislovas, Miglius Alaburda y Julius Ruseckas. "1/f noise from the nonlinear transformations of the variables". Modern Physics Letters B 29, n.º 34 (20 de diciembre de 2015): 1550223. http://dx.doi.org/10.1142/s0217984915502231.

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The origin of the low-frequency noise with power spectrum [Formula: see text] (also known as [Formula: see text] fluctuations or flicker noise) remains a challenge. Recently, the nonlinear stochastic differential equations for modeling [Formula: see text] noise have been proposed and analyzed. Here, we use the self-similarity properties of this model with respect to the nonlinear transformations of the variables of these equations and show that [Formula: see text] noise of the observable may yield from the power-law transformations of well-known standard processes, like the Brownian motion, Bessel and similar stochastic processes. Analytical and numerical investigations of such techniques for modeling processes with [Formula: see text] fluctuations is presented.
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Pepper, G. T., T. J. Kennett y W. V. Prestwich. "A re-investigation of the possibility of 1/f noise fluctuations in α decay". Canadian Journal of Physics 67, n.º 5 (1 de mayo de 1989): 468–70. http://dx.doi.org/10.1139/p89-083.

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The fluctuations in counts observed for the α decay of 241Am have been analyzed for a possible 1/f component. The data indicate that if 1/f fluctuations exist, the associated flicker floor is probably less than 2 × 10−9.
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Ho, W. Y., W. K. Fong, C. Surya, K. Y. Tong, W. Kim, A. Botcharev y H. Morkoc. "Characterization of Flicker Noise in GaN Based Modfets at low Drain Bias". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 565–69. http://dx.doi.org/10.1557/s1092578300003057.

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We report systematic characterizations of flicker noise in GaN based MODFETs. Flicker noise was measured across the channel of the devices from room temperature to 130 K. The voltage noise power spectra, SV(f) were found to be proportional to 1/fγ, where γ depends on the device temperature as well as the gate bias. Study of SV(f) as a function of the biasing condition was conducted in detail and was found to vary as VD2/(VG−VT)β where β changes with temperature from about 2.1 at room temperature to about 0.9 at 130K. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The data suggested that the trapping and detrapping of carriers did not lead to fluctuations in the carrier concentration as postulated in the McWhorter’s model. However, more work is needed to determine if surface mobility fluctuations played key role in the 1/f noise.
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LENOIR, BENJAMIN. "PREDICTING THE VARIANCE OF A MEASUREMENT WITH 1/f NOISE". Fluctuation and Noise Letters 12, n.º 01 (marzo de 2013): 1350006. http://dx.doi.org/10.1142/s0219477513500065.

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Measurement devices always add noise to the signal of interest and it is necessary to evaluate the variance of the results. This article focuses on stationary random processes whose power spectrum density is a power law of frequency. For flicker noise, behaving as 1/f and which is present in many different phenomena, the usual way to compute the variance leads to infinite values. This article proposes an alternative definition of the variance which takes into account the fact that measurement devises need to be calibrated. This new variance, which depends on the calibration duration, the measurement duration and the duration between the calibration and the measurement, allows avoiding infinite values when computing the variance of a measurement.
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Prestwich, W. V., T. J. Kennett y G. T. Pepper. "Comment on: Flicker-noise fluctuations in α-radioactive decay". Canadian Journal of Physics 66, n.º 1 (1 de enero de 1988): 100–101. http://dx.doi.org/10.1139/p88-014.

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A discrepancy between experiments to establish the existence of 1/f fluctuations in α decay is discussed. It is argued that the flicker floor reported for direct α counting cannot be due to fluctuations intrinsic to the decay process.
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Pelz, Jonathan, John Clarke y Wayne E. King. "Flicker (1/f) noise in copper films due to radiation-induced defects". Physical Review B 38, n.º 15 (15 de noviembre de 1988): 10371–86. http://dx.doi.org/10.1103/physrevb.38.10371.

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Tesis sobre el tema "Flicker (1/f) Noise"

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Gesley, Mark Alan. "Spectral analysis of field emission flicker (1/f) noise". Full text open access at:, 1985. http://content.ohsu.edu/u?/etd,85.

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Toro, Clemente Jr. "Improved 1/f Noise Measurements for Microwave Transistors". Scholar Commons, 2004. https://scholarcommons.usf.edu/etd/1271.

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Minimizing electrical noise is an increasingly important topic. New systems and modulation techniques require a lower noise threshold. Therefore, the design of RF and microwave systems using low noise devices is a consideration that the circuit design engineer must take into account. Properly measuring noise for a given device is also vital for proper characterization and modeling of device noise. In the case of an oscillator, a vital part of a wireless receiver, the phase noise that it produces affects the overall noise of the system. Factors such as biasing, selectivity of the input and output networks, and selectivity of the active device (e.g. a transistor) affect the phase noise performance of the oscillator. Thus, properly selecting a device that produces low noise is vital to low noise design. In an oscillator, 1/f noise that is present in transistors at low frequencies is upconverted and added to the phase noise around the carrier signal. Hence, proper characterization of 1/f noise and its effects on phase noise is an important topic of research. This thesis focuses on the design of a microwave transistor 1/f noise (flicker noise) measurement system. Ultra-low noise operational amplifier circuits are constructed and used as part of a system designed to measure 1/f noise over a broad frequency range. The system directly measures the 1/f noise current sources generated by transistors with the use of a transimpedance (current) amplifier. Voltage amplifiers are used to provide the additional gain. The system was designed to provide a wide frequency response in order to determine corner frequencies for various devices. Problems such as biasing filter networks, and load resistances are examined as they have an effect on the measured data; and, solutions to these problems are provided. Proper representation of measured 1/f noise data is also presented. Measured and modeled data are compared in order to validate the accuracy of the measurements. As a result, 1/f noise modeling parameters extracted from the measured 1/f noise data are used to provide improved prediction of oscillator phase noise.
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Jin, Zhenrong. "Low-Frequency Noise in Silicon-Germanium BiCMOS Technology". Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/4827.

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Low-frequency noise (LFN) is characterized using in-house measurement systems in a variety of SiGe HBT generations. As technology scales to improve the performance and integration level, a large low-frequency noise variation in small geometry SiGe HBTs is first observed in 90 GHz peak fT devices. The fundamental mechanism of this geometry dependent noise variation is thought to be the superposition of individual Lorentzian spectra due to the presence of G/R centers in the device. The observed noise variation is the result of a trap quantization effect, and is thus best described by number fluctuation theory rather than mobility fluctuation theory. This noise variation continues to be observed in 120 GHz and 210 GHz peak fT SiGe HBT BiCMOS technology. Interestingly, the noise variation in the 210 GHz technology generation shows anomalous scaling behavior below about 0.2-0.3um2 emitter geometry, where the noise variation rapidly decreases. Data shows that the collector current noise is no longer masked by the base current noise as it is in other technology generations, and becomes the dominant noise source in these tiny 210 GHz fT SiGe HBTs. The proton response of LFN in SiGe HBTs is also investigated in this thesis. The results show that the relative increase of LFN is minor in transistors with small emitter areas, but significant in transistors with large emitter areas after radiation. A noise degradation model is proposed to explain this observed geometry dependent LFN degradation. A 2-D LFN simulation is applied to SiGe HBTs for the first time in order to shed light on the physical mechanisms responsible for LFN. A spatial distribution of base current noise and collector current noise reveals the relevant importance of the physical locations of noise sources. The impact of LFN in SiGe HBTs on circuits is also examined. The impact of LFN variation on phase noise is demonstrated, showing VCOs with small geometry devices have relatively large phase noise variation across samples.
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Unver, Alper. "Determination Of Stochastic Model Parameters Of Inertial Sensors". Phd thesis, METU, 2013. http://etd.lib.metu.edu.tr/upload/12615548/index.pdf.

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ABSTRACT DETERMINATION OF STOCHASTIC MODEL PARAMETERS OF INERTIAL SENSORS Ü
nver, Alper PhD, Department of Electric Electronic Engineering Supervisor: Prof. Dr. Mü
beccel Demirekler January 2013, 82 pages Gyro and accelerometer systematic errors due to biases, scale factors, and misalignments can be compensated via an on-board Kalman filtering approach in a Navigation System. On the other hand, sensor random noise sources such as Quantization Noise (QN), Angular Random Walk (ARW), Flicker Noise (FN), and Rate Random Walk (RRW) are not easily estimated by an on-board filter, due to their random characteristics. In this thesis a new method based on the variance of difference sequences is proposed to compute the powers of the above mentioned noise sources. The method is capable of online or offline estimation of stochastic model parameters of the inertial sensors. Our aim in this study is the estimation of ARW, FN and RRW parameters besides the quantization and the Gauss-Markov noise parameters of the inertial sensors. The proposed method is tested both on the simulated and the real sensor data and the results are compared with the Allan variance method. Comparison shows very satisfactory results for the performance of the method. Computational load of the new method is less than the computational load of the Allan variance on the order of tens. One of the usages of this method is the individual noise characterization. A noise, whose power spectral density has a constant slope, can be identified accurately by the proposed method. In addition to this, the parameters of the GM noise can also be determined. Another idea developed here is to approximate the overall error source as a combination of ARW and some number of GM sources only. The reasons of selecting such a structure is the feasibility of using these models in a Kalman filter framework for error propagation as well as their generality of modeling other noise sources.
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Husák, Marek. "Využití šumové diagnostiky k analýze vlastností solárních článků". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2009. http://www.nusl.cz/ntk/nusl-217922.

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The master’s thesis deals with the noise diagnostic in the solar cells. Describes the main kinds of noises. The samples were quality and reliability screened using noise reliability indicators. The samples were surveyed by measuring the I-V characteristics, the noise spectral density as a function of forward voltage and frequency. It was calculated the noise spectral density as a function of forward current.
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Toro, Clemente. "Improved 1/f noise measurements for microwave transistors". [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000371.

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Haigh, Mary K. "1/f noise in mercury cadmium telluride semiconductor diodes". Thesis, Heriot-Watt University, 2005. http://hdl.handle.net/10399/200.

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Jong, Yeung-dong. "Fiber-optic interferometer for high 1/f noise environments /". Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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Gross, Blaine Jeffrey. "1/f noise in MOSFETs with ultrathin gate dielectrics". Thesis, Massachusetts Institute of Technology, 1992. http://hdl.handle.net/1721.1/13192.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992.
Includes bibliographical references (p. 176-184).
by Blaine Jeffrey Gross.
Ph.D.
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Tobias, David Andrew. "1/f noise and Luttinger liquid phenomena in carbon nanotubes". College Park, Md. : University of Maryland, 2007. http://hdl.handle.net/1903/7334.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2007.
Thesis research directed by: Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Libros sobre el tema "Flicker (1/f) Noise"

1

Mandelbrot, Benoit B. Multifractals and 1/f noise: Wild self-affinity in physics (1963-1976). New York: Springer, 1998.

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Dąbrowski, Władysław R. Experimental study on the 1/f noise in surface-barrier particle detectors =: Badania doświadczalne szumów 1/f w detektorach promieniowania jądrowego z barierą powierzchniową. Kraków: Instytut Fizyki i Techniki Jądrowej AGH, 1988.

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Mandelbrot, Benoit B. Multifractals and 1/f noise: Wild self-affinity in physics (1963-1976) : selecta volume N. New York: Springer, 1999.

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Mandelbrot, Benoit B. Gaussian self-affinity and fractals: Globality, the earth, 1/f noise, and R/S. New York: Springer, 2002.

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International Conference on Noise in Physical Systems (10th 1989 Budapest, Hungary). Noise in physical systems: Including 1/f noise, biological systems and membranes : 10th international conference, August 21-25, 1989, Budapest, Hungary. Budapest: Akadémiai Kiadó, 1990.

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Van der Ziel Symposium on Quantum 1/f oise and other Low Frequency Fluctuations in Electronic Devices (8th 1998 St. Louis, Mo.). Quantum 1/f noise and other low frequency fluctuations in electronic devices: Seventh symposium : St. Louis, Missouri August 1998. Editado por Handel Peter H, Chung Alma L y American Institute of Physics. Woodbury, N.Y: AIP Press, 1999.

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Van der Ziel Symposium on Quantum 1/f Noise and Other Low-Frequency Fluctuations in Electronic Devices (6th 1994 St. Louis, Mo.). Sixth quantum 1/f noise and other low frequency fluctuations in electronic devices symposium: St. Louis, MO, May 1994. Editado por Handel Peter H, Chung Alma L y American Institute of Physics. Woodbury, N.Y: AIP Press, 1996.

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International, Conference on Noise in Physical Systems and 1/f Fluctuations (15th 1999 Hong Kong China). 15th International Conference on Noise in Physical Systems and 1/f Fluctuations: 23-26 August 1999. London: Bentham Press, 1999.

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International Conference on Noise in Physical Systems and 1/f Fluctuations (15th 1999 Hong Kong, China). 15th international conference on noise in physical systems and 1/f fluctuations: 23-26 August 1999. London: Bentham, 1999.

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L, Claeys Cor y Simoen E, eds. Noise in physical systems and 1/f fluctuations: Proceedings of the 14th International Conference, Leuven, Belgium, 14-18 July 1997. Singapore: World Scientific, 1997.

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Capítulos de libros sobre el tema "Flicker (1/f) Noise"

1

Snarskii, Andrei A., Igor V. Bezsudnov, Vladimir A. Sevryukov, Alexander Morozovskiy y Joseph Malinsky. "Flicker-Noise (1/f-Noise)". En Transport Processes in Macroscopically Disordered Media, 161–80. New York, NY: Springer New York, 2016. http://dx.doi.org/10.1007/978-1-4419-8291-9_13.

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Rammal, R. "Flicker (1/f) Noise in Percolation Networks". En Springer Proceedings in Physics, 118–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-93301-1_15.

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Chen, Jian, Tomoya Ogawa, Hiroyuki Nakamura, Akinobu Irie, Gin-ichiro Oya, Hiroaki Myoren, Kensuke Nakajima y Tsutomu Yamashita. "Flicker (1/f) Noise of YBCO Grain Boundary DC SQUIDs". En Advances in Superconductivity VI, 1103–6. Tokyo: Springer Japan, 1994. http://dx.doi.org/10.1007/978-4-431-68266-0_250.

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Rogers, C. T. y R. A. Buhrman. "Characterization of Tunnel Barriers by Flicker Noise Spectroscopy". En Advances in Cryogenic Engineering Materials, 489–98. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4613-9871-4_59.

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Levy, Ohad. "Weakly Nonlinear Conductivity and Flicker Noise Near Percolation". En Mathematics of Multiscale Materials, 155–78. New York, NY: Springer New York, 1998. http://dx.doi.org/10.1007/978-1-4612-1728-2_10.

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Shlesinger, Michael F. y Bruce J. West. "1/f versus 1/f α Noise". En Random Fluctuations and Pattern Growth: Experiments and Models, 320–24. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-2653-0_45.

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Wessel-Berg, Tore. "The Enigmatic 1/F Noise". En Electromagnetic and Quantum Measurements, 233–63. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4615-1603-3_9.

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Haartman, Martin von y Mikael Östling. "1/F Noise in Mosfets". En Low-Frequency Noise In Advanced Mos Devices, 53–102. Dordrecht: Springer Netherlands, 2007. http://dx.doi.org/10.1007/978-1-4020-5910-0_3.

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Paladino, E., L. Faoro, G. Falci y R. Fazio. "1/f Noise in Josephson Qubits". En International Workshop on Superconducting Nano-Electronics Devices, 15–24. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0737-6_3.

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Bulgac, Aurel. "1/f -noise in metallic clusters". En Small Particles and Inorganic Clusters, 454–57. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/978-3-642-60854-4_107.

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Actas de conferencias sobre el tema "Flicker (1/f) Noise"

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Srinivasan, P. y A. Marshall. "Correlating op-amp circuit noise with device flicker (1/f) noise for analog design applications". En 2009 IEEE International SOC Conference (SOCC). IEEE, 2009. http://dx.doi.org/10.1109/soccon.2009.5398062.

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Ding, Y. M., D. Misra y P. Srinivasan. "Bias temperature instability and its correlation to flicker (1/f) noise in FinFETs". En 2016 IEEE International Integrated Reliability Workshop (IIRW). IEEE, 2016. http://dx.doi.org/10.1109/iirw.2016.7904913.

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Ruseckas, Julius y Bronislovas Kaulakys. "Intermittency generating 1/f noise". En 2013 International Conference on Noise and Fluctuations (ICNF). IEEE, 2013. http://dx.doi.org/10.1109/icnf.2013.6578906.

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Kozub, V. I. "Disorder-induced flicker noise in high-Tc superconductors". En Noise in physical systems and 1/. AIP, 1993. http://dx.doi.org/10.1063/1.44580.

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Higuchi, Hisayuki. "1/f Temperature Fluctuations in Solids". En NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2036702.

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Izpura, J. I. "1/f Noise Enhancement In GaAs". En NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2036711.

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Hwang, Y. T., M. C. Lin, Y. W. Huang, C. K. Lo, Y. D. Yao y H. L. Huang. "1/f noise in spin transistors". En INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1464036.

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Lachinov, A. N. y R. H. Amirkhanov. "1/f noise in electroactive polymer". En International Conference on Science and Technology of Synthetic Metals. IEEE, 1994. http://dx.doi.org/10.1109/stsm.1994.834794.

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Laurson, Lasse y Mikko J. Alava. "1/f noise and plastic deformation". En International conference on Statistical Mechanics of Plasticity and Related Instabilities. Trieste, Italy: Sissa Medialab, 2006. http://dx.doi.org/10.22323/1.023.0051.

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Handel, Peter H. y Hadis Morkoç. "1/f Noise in Schottky diodes". En SPIE OPTO, editado por Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek y Euijoon Yoon. SPIE, 2011. http://dx.doi.org/10.1117/12.876254.

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Informes sobre el tema "Flicker (1/f) Noise"

1

Fote, A., S. Kohn, E. Fletcher y J. McDonough. Application of Chaos Theory to 1/f Noise. Fort Belvoir, VA: Defense Technical Information Center, febrero de 1988. http://dx.doi.org/10.21236/ada191150.

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Handel, Peter H. Quantum 1/f Noise in High Technology Applications Including Ultrasmall Structures and Devices. Fort Belvoir, VA: Defense Technical Information Center, mayo de 1994. http://dx.doi.org/10.21236/ada292812.

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Mercer, Linden B. 1/F Frequency Noise Effects on Self-Heterodyne Linewidth Measurements for Coherent Communications. Fort Belvoir, VA: Defense Technical Information Center, julio de 1990. http://dx.doi.org/10.21236/ada227942.

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VAN DER Ziel, A. Quantum 1/F Noise in Solid State Double Devices, in Particular Hg(1-x) CdxTe Diodes. Fort Belvoir, VA: Defense Technical Information Center, mayo de 1986. http://dx.doi.org/10.21236/ada171438.

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Handel, Peter H. Fundamental Quantum 1/F Noise in Ultrasmall Semiconductor Devices and Their Optimal Design Principles. Fort Belvoir, VA: Defense Technical Information Center, mayo de 1988. http://dx.doi.org/10.21236/ada198462.

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Ioffe, Lev B. y Lara Faoro. Controlling Decoherence in Superconducting Qubits: Phenomenological Model and Microscopic Origin of 1/f Noise. Fort Belvoir, VA: Defense Technical Information Center, abril de 2011. http://dx.doi.org/10.21236/ada545158.

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Handel, Peter H. Fundamental Quantum 1/F Noise in Ultrasmall Semi Conductor Devices and Their Optimal Design Principles. Fort Belvoir, VA: Defense Technical Information Center, mayo de 1986. http://dx.doi.org/10.21236/ada174512.

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Handel, Peter H. International van der Ziel Symposium on Quantum 1/f, 1/f Noise and Other Low Frequency Fluctuations, Mainly in GaN, Quantum or Nanometric Devices (9th) Held in Richmond, Virginia on August 2-4, 2002. Fort Belvoir, VA: Defense Technical Information Center, febrero de 2004. http://dx.doi.org/10.21236/ada420504.

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Kang, W. N., D. H. Kim y J. H. Park. Origin of 1/f noise peaks of YBa{sub 2}Cu{sub 3}O{sub x} films in a magnetic field. Office of Scientific and Technical Information (OSTI), febrero de 1994. http://dx.doi.org/10.2172/79036.

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Handel, Peter H. y Alma L. Chung. International Conference on Noise in Physical Systems and 1/f Fluctuations (12th) Held in St. Louis, Missouri on 16-20 August 1993. AIP Conference Proceedings 285,. Fort Belvoir, VA: Defense Technical Information Center, agosto de 1993. http://dx.doi.org/10.21236/ada299612.

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