Artículos de revistas sobre el tema "Flash Memory Device"
Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros
Consulte los 50 mejores artículos de revistas para su investigación sobre el tema "Flash Memory Device".
Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.
También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.
Explore artículos de revistas sobre una amplia variedad de disciplinas y organice su bibliografía correctamente.
Abdullah, Dhuha y Reyath Mahmood. "Design Flash Memory Programmer Device". AL-Rafidain Journal of Computer Sciences and Mathematics 3, n.º 1 (1 de julio de 2006): 55–83. http://dx.doi.org/10.33899/csmj.2006.164045.
Texto completoAlahmadi, Abdulhadi y Tae Sun Chung. "RSLSP: An Effective Recovery Scheme for Flash Memory Leveraging Shadow Paging". Electronics 11, n.º 24 (10 de diciembre de 2022): 4126. http://dx.doi.org/10.3390/electronics11244126.
Texto completoHan, Hoonhee, Seokmin Jang, Duho Kim, Taeheun Kim, Hyeoncheol Cho, Heedam Shin y Changhwan Choi. "Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel". Electronics 11, n.º 1 (24 de diciembre de 2021): 53. http://dx.doi.org/10.3390/electronics11010053.
Texto completoKostadinov, Hristo y Nikolai Manev. "Integer Codes Correcting Asymmetric Errors in Nand Flash Memory". Mathematics 9, n.º 11 (1 de junio de 2021): 1269. http://dx.doi.org/10.3390/math9111269.
Texto completoTsoukalas, Dimitris y Emanuele Verrelli. "Inorganic Nanoparticles for either Charge Storage or Memristance Modulation". Advances in Science and Technology 77 (septiembre de 2012): 196–204. http://dx.doi.org/10.4028/www.scientific.net/ast.77.196.
Texto completoXu, Guangxia, Lingling Ren y Yanbing Liu. "Flash-Aware Page Replacement Algorithm". Mathematical Problems in Engineering 2014 (2014): 1–11. http://dx.doi.org/10.1155/2014/136246.
Texto completoPoudel, Prawar, Biswajit Ray y Aleksandar Milenkovic. "Microcontroller Fingerprinting Using Partially Erased NOR Flash Memory Cells". ACM Transactions on Embedded Computing Systems 20, n.º 3 (abril de 2021): 1–23. http://dx.doi.org/10.1145/3448271.
Texto completoHuang, Bai Yi. "A New Write Caching Algorithm for Solid State Disks". Advanced Materials Research 341-342 (septiembre de 2011): 700–704. http://dx.doi.org/10.4028/www.scientific.net/amr.341-342.700.
Texto completoWang, Lei, CiHui Yang, Jing Wen y Shan Gai. "Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices". Journal of Nanomaterials 2014 (2014): 1–10. http://dx.doi.org/10.1155/2014/927696.
Texto completoJung, Sang-Goo y Jong-Ho Lee. "Flash Memory Device with `I' Shape Floating Gate for Sub-70 nm NAND Flash Memory". Japanese Journal of Applied Physics 45, No. 45 (10 de noviembre de 2006): L1200—L1202. http://dx.doi.org/10.1143/jjap.45.l1200.
Texto completoJackson, Riley, Jonathan Gresl y Ramon Lawrence. "Efficient External Sorting for Memory-Constrained Embedded Devices with Flash Memory". ACM Transactions on Embedded Computing Systems 20, n.º 4 (junio de 2021): 1–21. http://dx.doi.org/10.1145/3446976.
Texto completoHolt, Joshua S., Karsten Beckmann, Zahiruddin Alamgir, Jean Yang-Scharlotta y Nathaniel C. Cady. "Effect of Displacement Damage on Tantalum Oxide Resistive Memory". MRS Advances 2, n.º 52 (2017): 3011–17. http://dx.doi.org/10.1557/adv.2017.422.
Texto completoSassani (Sarrafpour), Bahman A., Mohammed Alkorbi, Noreen Jamil, M. Asif Naeem y Farhaan Mirza. "Evaluating Encryption Algorithms for Sensitive Data Using Different Storage Devices". Scientific Programming 2020 (31 de mayo de 2020): 1–9. http://dx.doi.org/10.1155/2020/6132312.
Texto completoDâna, Aykutlu, Imran Akca, Atilla Aydinli, Rasit Turan y Terje G. Finstad. "A Figure of Merit for Optimization of Nanocrystal Flash Memory Design". Journal of Nanoscience and Nanotechnology 8, n.º 2 (1 de febrero de 2008): 510–17. http://dx.doi.org/10.1166/jnn.2008.a156.
Texto completoVonBergen, Wade y Madhu Basude. "A High Temp standalone 4MByte Flash memory with SPI Interface for 210C applications". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, HITEC (1 de enero de 2012): 000066–71. http://dx.doi.org/10.4071/hitec-2012-tp11.
Texto completoAlahmadi, Abdulhadi y Tae Sun Chung. "Crash Recovery Techniques for Flash Storage Devices Leveraging Flash Translation Layer: A Review". Electronics 12, n.º 6 (16 de marzo de 2023): 1422. http://dx.doi.org/10.3390/electronics12061422.
Texto completoBarrett, Michael. "Gone in a Flash". New Electronics 52, n.º 8 (23 de abril de 2019): 30–31. http://dx.doi.org/10.12968/s0047-9624(22)61007-1.
Texto completoYang, Yanhua, Jing-Cheng Xia, Youxuan Zheng, Yingzhong Shen y Gaozhang Gou. "Synthesis and non-volatile electrical memory characteristics of triphenylamine-based polyimides with flexibility segments". New Journal of Chemistry 42, n.º 23 (2018): 19008–19. http://dx.doi.org/10.1039/c8nj04103b.
Texto completoNaqi, Muhammad, Nayoung Kwon, Sung Jung, Pavan Pujar, Hae Cho, Yong Cho, Hyung Cho, Byungkwon Lim y Sunkook Kim. "High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles". Nanomaterials 11, n.º 5 (24 de abril de 2021): 1101. http://dx.doi.org/10.3390/nano11051101.
Texto completoZhevnyak, O. G., V. M. Borzdov, A. V. Borzdov y A. N. Petlitsky. "Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters". Devices and Methods of Measurements 13, n.º 4 (22 de diciembre de 2022): 276–80. http://dx.doi.org/10.21122/2220-9506-2022-13-4-276-280.
Texto completoTsoukalas, D. "From silicon to organic nanoparticle memory devices". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 367, n.º 1905 (28 de octubre de 2009): 4169–79. http://dx.doi.org/10.1098/rsta.2008.0280.
Texto completoLi, Chao, Bo Lei, Wendy Fan, Daihua Zhang, M. Meyyappan y Chongwu Zhou. "Molecular Memory Based on Nanowire–Molecular Wire Heterostructures". Journal of Nanoscience and Nanotechnology 7, n.º 1 (1 de enero de 2007): 138–50. http://dx.doi.org/10.1166/jnn.2007.18011.
Texto completoTang, X., X. Baie, J. P. Colinge, A. Crahay, B. Katschmarsyj, V. Scheuren, D. Spôte, N. Reckinger, F. Van de Wiele y V. Bayot. "Self-aligned silicon-on-insulator nano flash memory device". Solid-State Electronics 44, n.º 12 (diciembre de 2000): 2259–64. http://dx.doi.org/10.1016/s0038-1101(00)00221-5.
Texto completoVladimirov, S. y D. Berestovoy. "IoT Device Identification Protocol based on Degraded Flash Memory". Telecom IT 8, n.º 2 (junio de 2020): 20–31. http://dx.doi.org/10.31854/2307-1303-2020-8-2-20-31.
Texto completoMarent, A., T. Nowozin, M. Geller y D. Bimberg. "The QD-Flash: a quantum dot-based memory device". Semiconductor Science and Technology 26, n.º 1 (9 de diciembre de 2010): 014026. http://dx.doi.org/10.1088/0268-1242/26/1/014026.
Texto completoWu, Chien-Hung, Song-Nian Kuo, Kow-Ming Chang, Yi-Ming Chen, Yu-Xin Zhang, Ni Xu, Wu-Yang Liu y Albert Chin. "Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer". Journal of Nanoscience and Nanotechnology 20, n.º 7 (1 de julio de 2020): 4244–47. http://dx.doi.org/10.1166/jnn.2020.17561.
Texto completoHong, Yunshu, Yiyu Pan y Zhongfu Xu. "Based on the comparison with other kinds of storage devices to predict the future development of STT-MRAM". Highlights in Science, Engineering and Technology 46 (25 de abril de 2023): 197–204. http://dx.doi.org/10.54097/hset.v46i.7704.
Texto completoSharma, Anju, Preeth Sivakumar, Andrew Feigel, In Tae Bae, Lawrence P. Lehman, Joseph Gregor, James Cash y Joseph Kolly. "Effects of x-ray exposure on NOR and NAND flash memories during high-resolution 2D and 3D x-ray inspection". International Symposium on Microelectronics 2016, n.º 1 (1 de octubre de 2016): 000660–65. http://dx.doi.org/10.4071/isom-2016-thp53.
Texto completoYang, Seung Dong, Ho Jin Yun, Kwang Seok Jeong, Yu Mi Kim, Sang Youl Lee, Jae Sub Oh, Hi Deok Lee y Ga Won Lee. "The analysis of 3-Level Charge Pumping in SOHOS Flash Memory". Advanced Materials Research 658 (enero de 2013): 658–61. http://dx.doi.org/10.4028/www.scientific.net/amr.658.658.
Texto completoMativenga, Ronnie, Prince Hamandawana, Tae-Sun Chung y Jongik Kim. "FTRM: A Cache-Based Fault Tolerant Recovery Mechanism for Multi-Channel Flash Devices". Electronics 9, n.º 10 (27 de septiembre de 2020): 1581. http://dx.doi.org/10.3390/electronics9101581.
Texto completoXin, Ying, Xiaofeng Zhao, Xiankai Jiang, Qun Yang, Jiahe Huang, Shuhong Wang, Rongrong Zheng, Cheng Wang y Yanjun Hou. "Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl)". RSC Advances 8, n.º 13 (2018): 6878–86. http://dx.doi.org/10.1039/c8ra00029h.
Texto completoLiu, Shi Min, Xuan Yu Qian, Cheng Zhou y Xiao Juan Guan. "The Design of an Embedded File System Based on the Flash". Advanced Materials Research 791-793 (septiembre de 2013): 1872–75. http://dx.doi.org/10.4028/www.scientific.net/amr.791-793.1872.
Texto completoHudgens, S. y B. Johnson. "Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology". MRS Bulletin 29, n.º 11 (noviembre de 2004): 829–32. http://dx.doi.org/10.1557/mrs2004.236.
Texto completoHe, Yu Ru, Pei Bang Dai, Ji Wen Xu, Yue Qun Lu y Hua Wang. "Synthesis and Resistive Switching Characteristics of Ethyl Methacrylate /N, N'-4, 4'-Diphenylmethane-Bismaleimide Copolymer". Advanced Materials Research 788 (septiembre de 2013): 159–63. http://dx.doi.org/10.4028/www.scientific.net/amr.788.159.
Texto completoCHONG, CHEE CHING, KAI HONG ZHOU, PING BAI, ER PING LI y GANESH S. SAMUDRA. "SELF-CONSISTENT SIMULATION OF QUANTUM DOT FLASH MEMORY DEVICE WITH SiO2 AND HfO2 DIELECTRICS". International Journal of Nanoscience 04, n.º 02 (abril de 2005): 171–78. http://dx.doi.org/10.1142/s0219581x05003036.
Texto completoLin, Wei, Yan Yuan Zhang y Zhan Huai Li. "A Real-Time Flash Memory Storage System in Embedded Environment". Advanced Materials Research 341-342 (septiembre de 2011): 807–10. http://dx.doi.org/10.4028/www.scientific.net/amr.341-342.807.
Texto completoShim, Won Bo, Seongjae Cho, Jung Hoon Lee, Dong Hua Li, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim et al. "Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory". IEEE Transactions on Nanotechnology 11, n.º 2 (marzo de 2012): 307–13. http://dx.doi.org/10.1109/tnano.2011.2172217.
Texto completoPark, Jonghyeok, Soyee Choi, Gihwan Oh, Soojun Im, Moon-Wook Oh y Sang-Won Lee. "FlashAlloc: Dedicating Flash Blocks by Objects". Proceedings of the VLDB Endowment 16, n.º 11 (julio de 2023): 3266–78. http://dx.doi.org/10.14778/3611479.3611524.
Texto completoLin, Chan-Ching, Kuei-Shu Chang-Liao, Tzung-Bin Huang, Cheng-Jung Yu y Hsueh-Chao Ko. "A new erase method for scaled NAND flash memory device". Microelectronics Reliability 72 (mayo de 2017): 34–38. http://dx.doi.org/10.1016/j.microrel.2017.03.031.
Texto completoHwang, Eun Suk, Jun Shik Kim, Seok Min Jeon, Seung Jun Lee, Younjin Jang, Deok-Yong Cho y Cheol Seong Hwang. "In2Ga2ZnO7oxide semiconductor based charge trap device for NAND flash memory". Nanotechnology 29, n.º 15 (23 de febrero de 2018): 155203. http://dx.doi.org/10.1088/1361-6528/aaadf7.
Texto completoKim, Bo-Kyeong, Gun-Woo Kim y Dong-Ho Lee. "A Novel B-Tree Index with Cascade Memory Nodes for Improving Sequential Write Performance on Flash Storage Devices". Applied Sciences 10, n.º 3 (21 de enero de 2020): 747. http://dx.doi.org/10.3390/app10030747.
Texto completoJeong, Jun-Kyo, Jae-Young Sung, Woon-San Ko, Ki-Ryung Nam, Hi-Deok Lee y Ga-Won Lee. "Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory". Micromachines 12, n.º 11 (15 de noviembre de 2021): 1401. http://dx.doi.org/10.3390/mi12111401.
Texto completoGordon, Holden, Jack Edmonds, Soroor Ghandali, Wei Yan, Nima Karimian y Fatemeh Tehranipoor. "Flash-Based Security Primitives: Evolution, Challenges and Future Directions". Cryptography 5, n.º 1 (4 de febrero de 2021): 7. http://dx.doi.org/10.3390/cryptography5010007.
Texto completoWu, Enxiu, Yuan Xie, Shijie Wang, Daihua Zhang, Xiaodong Hu y Jing Liu. "Multi-level flash memory device based on stacked anisotropic ReS2–boron nitride–graphene heterostructures". Nanoscale 12, n.º 36 (2020): 18800–18806. http://dx.doi.org/10.1039/d0nr03965a.
Texto completoChae, Suk-Joo, Ronnie Mativenga, Joon-Young Paik, Muhammad Attique y Tae-Sun Chung. "DSFTL: An Efficient FTL for Flash Memory Based Storage Systems". Electronics 9, n.º 1 (12 de enero de 2020): 145. http://dx.doi.org/10.3390/electronics9010145.
Texto completoNguyen, The-Nghia, Sunghyun Park y Donghwa Shin. "Extraction of Device Fingerprints Using Built-in Erase-Suspend Operation of Flash Memory Devices". IEEE Access 8 (2020): 98637–46. http://dx.doi.org/10.1109/access.2020.2995891.
Texto completoLiu, W. J., L. Chen, P. Zhou, Q. Q. Sun, H. L. Lu, S. J. Ding y David W. Zhang. "Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device". Journal of Nanomaterials 2016 (2016): 1–6. http://dx.doi.org/10.1155/2016/6751497.
Texto completoJiang, Dandan, Lei Jin y Zongliang Huo. "A Quantitative Approach to Characterize Total Ionizing Dose Effect of Periphery Device for 65 nm Flash Memory". Nanoscience and Nanotechnology Letters 10, n.º 3 (1 de marzo de 2018): 378–82. http://dx.doi.org/10.1166/nnl.2018.2604.
Texto completoJeon, Sanghun. "Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications". Electrochemical and Solid-State Letters 12, n.º 11 (2009): H412. http://dx.doi.org/10.1149/1.3212683.
Texto completoZhang, Kai, Xinyi Zhu, Yafen Yang y Hao Zhu. "Polarization of Bi2Se3 thin film toward non-volatile memory applications". AIP Advances 12, n.º 8 (1 de agosto de 2022): 085104. http://dx.doi.org/10.1063/5.0093212.
Texto completo